次世代工業領域最佳電源方案介紹 ( 相關控制 IC 與超高壓 SiC 產品 )

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1 次世代工業領域最佳電源方案介紹 ( 相關控制 IC 與超高壓 SiC 產品 ) 唐仲亨 ROHM Semiconductor Taiwan Design Center

2 Outline Characteristic of SiC material and SiC device Application of SiC ROHM SiC device SiC MOSFET in Auxiliary power supply P. 1

3 Outline Characteristic of SiC material and SiC device Application of SiC ROHM SiC device SiC MOSFET in Auxiliary power supply P. 2

4 Superior Material Properties of SiC Compound semiconductor which has 1 x 1 covalent bond of Si and C Extremely hard material new mohs hardness :13 Diamond (15) Lower Loss:x1/10 Higher Voltage:x10 Electric Breakdown Field (V/cm) 10 6 Cooling: x3 SiC Wafer Bandgap (ev) Higher Temp Operation: x3 3 Si K 2 4 SiC Thermal Conductivity (W/cm ) Higher Frequency :x10 3 Electron Saturation Velocity (x10 7 cm/s) 3K Melting Point ( ) Higher Temp Endurance:x3 P. 3

5 Comparison Between Si and SiC devices Diode Transistor Note Si Bipolar device PND (FRD) IGBT Low Ron by hole injection (conductivity modulation) Slow reverse recovery (FRD) Tail current (IGBT) Si Unipolar device SBD MOSFET SJ-MOSFET Fast SW speed High RonA at HV SJ-MOS 900V Terrible body diode recovery SiC Unipolar device SBD MOSFET Very low RonA Fast SW speed Ultra fast recovery (SBD/ bodydiode of MOS) Operate at 200 ~ P. 4

6 SBD MOSFET SJ-MOSFET PND, FRD SBD PND IGBT MOSFET IGBT Comparison Between Si and SiC devices Breakdown Voltage Diode Switching Device 6.5kV 3.3kV 6.5kV 3.3kV Minority Carrier Device :Lower on-resistance but Lower SW Speed 1.7kV 1.2kV 1.7kV 1.2kV Majority Carrier Device :Lower on-resistance & Higher SW Speed 900V 900V 600V 600V 400V 400V 100V 100V Si SiC Si SiC Unipolar Devices (Majority Carrier Device) are available in higher voltage applications by SiC Semiconductor P. 5

7 C h a r a c t e r i s t i c s S i C S B D P. 6

8 Comparison: Si-FRD vs SiC-SBD P. 7

9 Forward Current: If (A) Forward Current: If (A) Forward Current: If (A) Forward Current: If (A) Comparison: Si-FRD vs SiC-SBD Temperature Dependency Forward Current Dependency If=20A If=10A If=2.5A Time (nsec) Vr=400V Si-FRD (RT) Si-FRD (125 ) Vr=400V Ta=25 o C Vr=400V SiC-SBD (RT) SiC-SBD (125 ) Time (nsec) If=20A Vr=400V Ta=25 o C If=10A If=2.5A Time (nsec) Time (nsec) P. 8

10 C h a r a c t e r i s t i c s o f S i C M O S F E T P. 9

11 Why SiC in Higher Voltage Application? SiC is the most promising material for Power Electronics because of Lower Power Losses P. 10

12 Area specific resistance RonA (mωcm2) RonA vs BV Chip size ratio 75 Si-MOSFET Blocking Voltage (V) Si-SJMOS 2G SiC MOSFET (planar gate) 1 3G SiC MOSFET (trench gate) At over 900V, There is no MOSFET having low Ron. P. 11

13 Conduction loss/ switching loss Conduction C) ROHM SiC MOSFET 1200V Switching Loss Si-IGBT Ic コレクタ電流 2A/div 2 A/div ID (A) 10 G Vce 100 V/div VCE 100V/div Tail テイル電流 Current 5 0 Si IGBT 1200V VDS (V) SiC-MOS ドレイン電流 Ic 2 2A/div Significant difference at low power load conditions 100nsec/div G V ds 100 V/div VDS 100V/div No テイル電流なし Tail Current Lower Eoff P. 12

14 Reverse recovery of body diode IXFB44N100P (1000V Si-MOSFET) SCT2080KE (1200V SiC-MOSFET) Is(10A/div) Is(10A/div) 80ns/div trr=163ns 100ns/div trr=16ns 100ns/div Vds(100V/div) Irr=4A Vds(100V/div) Irr=28A Err=41.0uJ Err=0.3uJ P. 13

15 Drain Current : I D [A] Body diode 特性 Electrical Characteristic V D -I D Characteristics(reverse Vd- Id (reverse direction) direction) V GS =0V V GS =18V 0 Source(+) Source(+) -5 Ta=25ºC Ta=25 Pulsed VVgs=0V GS VVgs=2V GS VVgs=4V GS V Vgs=6V GS =6V Vgs=10V V GS Vgs=14V V GS Vgs=18V V GS Body-Di current - Channel current Drain - Source Voltage : V DS [V] Drain(-) Drain(-) Though V F of body-diode is high because SiC is a wide band gap semiconductor, it can be reduced by tuning-on MOS channel. (reverse conduction) P. 14

16 Rdson(mΩ) Recommended Gate Voltage of SiC-MOSFET V GS =18V is recommended as driving voltage On-resistance v.s. Gate Voltage SCT2080KE (1,200V 80mΩ) Vgs-Rdson Id=10A Device Si-IGBT Si-MOSFET SiC-MOSFET Recommended V GS 10V - 15V 16V~20V thermal runaway 18V Vgs (V) 18V is recommended as the gate voltage, to get lower on resistance, and to avoid the thermal runaway (under 12V area). P. 15

17 Outline Characteristic of SiC material and SiC device Application of SiC ROHM SiC device SiC MOSFET in Auxiliary power supply P. 16

18 SiC in EV/ EV Charger DC/ DC converter: Weight/ Volume -20% Inverter: Weight/ Volume -70% Charger: Efficiency improved 2.5%( OBC) Battery On bpoard charger Charger station P. 17

19 SiC in PV Inverter PV Inverter Increase efficiency exceed 98.5% Reduce weight/ Volume -85% P. 18

20 SiC in UPS/ Motor driver PFC block SiC MOS/ SiC SBD Inverter hybrid IGBT. P. 19

21 Outline Characteristic of SiC material and SiC device Application of SiC ROHM SiC device SiC MOSFET in Auxiliary power supply P. 20

22 R O H M S i C S B D P. 21

23 ROHM SiC SBD P. 22

24 Surge current robustness ROHM SiC SBD 3 rd gen. SCS310A competitor 650V 10A TO-220AC 2L 2 nd gen. SCS210A 1 st gen. SCS110A Improvement of I FSM by 2.5 times from previous gen. with low V F 25 Forward voltage Realized lower forward voltage characteristic by improvement of fabrication process P. 23

25 ROHM SiC SBD_2Gen Package / Rated voltage TO-220 TO-220FM TO-247 D2pack (LPTL) K Bare dies K A K A A K A N/C A 650V 6A~20A 6A~20A 20A~40A 6A~20A 6A~20A(MP) 30A~100A(DS) 1200V 5A~20A 10A~40A 5A~20A 30A, 50A 1700V 10A~50A Automotive grade AEC-Q101 qualified 650V 6A~20A 20A~40A 6A~20A 1200V 5A~20A 10A, 20A(MP) 30A, 40A (Under development) P. 24

26 ROHM SiC SBD_3Gen 650V P/N 2A~10A TO-220ACP SCS3 AP TO-263AB (LPTL) SCS3 AJ TO-252M SCS3 AD P. 25

27 R O H M S i C M O S F E T P. 26

28 ROHM SiC MOSFET Generation Structure 2 nd generation SiC-MOSFET Planner gate (DMOS) 3 rd generation SiC-MOSFET Trench gate (UMOS) Ron A reduction about 50% P. 27

29 ROHM SiC MOSFET( Double trench) P. 28

30 ROHM SiC MOS( DMOS) 650V P/N 120mΩ TO-220AB SCT2120AF G D S 1200V P/N 80mΩ 160mΩ 280mΩ 450mΩ TO-247 SCT2xxxKE SCH2080KE SBD co-pack G D S 1700V P/N 750mΩ 1150mΩ TO-3PFM SCT2H12NZ New D TO-268-2L SCT2xxxNY G D S G S As of Apr 2016 P. 29

31 ROHM SiC MOS( DMOS) AEC-Q101 qualified 1200V P/N 80mΩ 160mΩ 280mΩ 450mΩ TO-247 SCT2xxxKEAHR As of Mar, 2016 P. 30

32 ROHM SiC MOS( UMOS) 650V P/N 17mΩ 22mΩ 30mΩ 60mΩ 80mΩ 120mΩ TO-247N SCT3xxxAL 1200V P/N 22mΩ 30mΩ 40mΩ 80mΩ 160mΩ TO-247N SCT3xxxKL As of Oct, 2015 P. 31

33 R O H M S i C M o d u l e P. 32

34 ROHM SiC Module Feature Full SiC module Equivalent package size as standard IGBT modules Built-in thermistor Tjmax=175 C 1200V/ 80A~ 1200V/ 180A 1200V/ 300A P. 33

35 Outline Characteristic of SiC material and SiC device Application of SiC ROHM SiC device SiC MOSFET in Auxiliary power supply P. 34

36 SiC-MOSFET for Auxiliary power supply SCT2H12NY 2SKxxxx STPxxxx Vds 1700V 1500V 1500V Id max 4A 2A 2.5A Tjmax Ω 9Ω 6Ω Ciss 184pF 990pF 939pF Qg 14nC 75nC 29.3nC Si 9.0 Ohm + heat sink SiC 1.2 Ohm P. 35

37 BD7682xFJ-LB Feature Optimum System for driving SiC-MOSFET Quasi Resonant DC/DC convertor Max Frequency Controlled(120kHz) Burst function at light load VCC Over Voltage Protection VCC Under Voltage Locked Out Broun IN/OUT Function DC/DC Cycle by Cycle current limiter 250nsec Leading-Edge Blanking Over Load Protection ( 128ms Timer ) Specification Operating VCC Range : 15.0V ~ 27.5V DCDC Max Frequency : 120kHz Operating current 800 ua Operating Temperature: - 40deg. to +105deg. PIN place / Package AC Vac + - FUSE Filter Diode Bridge 巻線比 :NP VP VD VS 巻線比 :NS CM VOUT 巻線比 :ND BO VCC MASK OUT Control IC ZT FB CS GND ERROR AMP SOP-J8S 6.00mm x 4.90mm x 1.375mm Pitch:1.27mm(Typ.) RS PC P. 36

38 Rdson(mΩ) BD768xFJ-LB s Feature Optimal driver circuit to drive SiC-MOSFET SiC-MOSFET has much larger gate voltage range than Si-MOSFET UVLO Vgs-Rdson Id=10A Operable gate voltage range 12V~22V BD7682FJ s Operable gate voltage range 16.0V~20.0V Vgs (V) Suitable for driving SiC MOSFET!! P. 37

39 BM2SCQ121NT Feature Quasi Resonant DC/DC convertor Burst function at light load Max Frequency Controlled(120kHz) VCC Over Voltage Protection VCC Under Voltage Locked Out Broun IN/OUT Function DC/DC Cycle by Cycle current limiter 250nsec Leading-Edge Blanking Over Load Protection ( 128ms Timer ) 1700V / 4A / 1.2ohm SiC MOSFET Specification Operating VCC Range : 15.0V ~ 29.5V Operating DRAIN Range ~ 1700V Drain-Source On resistance 1.56 ohm( typ.) DCDC Max Frequency : 120kHz Operating current 1.20 ma Operating Temperature: - 40deg. to +105deg. Power Range ( Without Heat-Sink) - 30W Power Range ( With Heat-Sink ) - 100W FUSE Filter Diode Bridge SOURCE FB GND ZT BO VCC DRAIN ERROR AMP TO220-6 P. 38

40 BM2SCQ121NT Package P. 39

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