Silicon Carbide MOSFETs Handle with Care
|
|
- Adrian Franklin
- 5 years ago
- Views:
Transcription
1 Control Monitor Protect Communicate Silicon Carbide MOSFETs Handle with Care Nitesh Satheesh, Applications Engineering Manager 2018 AgileSwitch, LLC 1
2 THE PROBLEMS 2018 AgileSwitch, LLC 2
3 Compromise System Design Engineers are faced with the challenge of justifying the higher cost of SiC Power Devices. Power Device Engineers are faced with the challenge of improving the device performance while reducing die area and hence cost. Application Engineers are faced with the challenge of convincing everyone that a compromise exists! 2018 AgileSwitch, LLC 3
4 Stray Inductance Gate Loop Lg Ld Lpwr Power Loop Lcs Ls Inductive Component Loop Problem Problem Classification Lg Gate Vgs Oscillations at switching events EMI Ld, Ls, Lpwr Power Vgs, Vds oscillations; Vds Overshoot on turn-off Overshoot Voltage Lcs Power Increased Switching Losses Efficiency 2018 AgileSwitch, LLC 4
5 SiC MOSFET Device Related Problems Parameter Si IGBT SiC MOSFET Verdict Channel Resistance High Low Lower conduction losses di/dt Low High Lower switching losses Short Circuit Capability Long Short Need to detect and shut down the device faster Tail Current Exists None Can operate with minimal dead time Package Standards available Some standards, but mostly unique Effect of stray Inductance Custom Gate Driver Boards needed Low High Low inductance Packaging, system design needed 2018 AgileSwitch, LLC 5
6 KEY TECHNOLOGY TO ADDRESS THE PROBLEMS 2018 AgileSwitch, LLC 6
7 Goal Performance Cost 2018 AgileSwitch, LLC 7
8 Power Device Improvement Reduce Rds(on) Reduce Package Inductance Improve System DC Link Bus Bars, Capacitors 2018 AgileSwitch, LLC 8
9 Gate Driver Advanced Control Reduced Ringing, Voltage overshoot Advanced Fault Monitoring Lower Switching Losses Enhanced Reliability Configurability Precise DSAT Control Better Diagnostics Shortened Design Cycle Design Flexibility 2018 AgileSwitch, LLC 9
10 Advanced Control In Vgs (V Gate to Source) switching transitions a plateau corresponding to the Miller Capacitance is observed. A rapid transition to and from this Miller Plateau results in lower switching losses, ringing, overshoot voltage. Augmented Switching TM is a method that includes one or more transitions and plateau rest periods AgileSwitch, LLC 10
11 Augmented Turn-Off TM Normal Operation Design Trade-Offs Higher Efficiency Overshoot Voltage Total Response time High Rg Slow gate transition Higher Switching Losses Need for Active Miller Clamp Low Rg Faster gate transition Lower Switching Losses No need for Active Miller Clamp 2018 AgileSwitch, LLC 11
12 Augmented Turn-Off TM Short Circuit Event High Rg Slow gate transition High stress in the Power Device Greater chance of device going to avalanche Low Rg Soft gate transition Lower stress in the Power Device Reduced chance of device going to avalanche 2018 AgileSwitch, LLC 12
13 Advanced Control cont. An alternate method is to use a programmable gate resistor array. The switching starts off with a low gate resistor value, increases as the miller plateau is reached and reduces again. Rg Time Method Advantages Disadvantages Augmented Switching Fast, Accurate, easy control Requires predetermined parameters Programmable Gate Resistor Array Based on closed loop feedback. Slow, Approximate, complex control 2018 AgileSwitch, LLC 13
14 Augmented Switching TM Highlights Reduce Turn-Off Loss up to 50% Reduce Turn-Off Overshoot up to 80% Detect Short Circuit up to 20% faster 2018 AgileSwitch, LLC 14
15 Augmented Switching Field Test Results Conventional Driver SC detection = 5000A AgileSwitch Driver Augmented Turn-Off Test Conditions Vds = 1000V Ids = 5000A Load = Dead Short Overshoot = 500V Current@ SC detection = 4200A Overshoot = 100V For full presentation, click here Source: Wolfspeed 2018 AgileSwitch, LLC 15
16 Advanced Fault Monitoring Monitoring of operating parameters is critical to ensure safe and reliable operation; Parameters that should be monitored include: Voltage: Input, Output Current: Output Temperature At high switching frequencies, the sampling rate, signal propagation delay etc. becomes a factor. Should the Gate Driver: Wait for the controller to respond? Preemptively respond? 2018 AgileSwitch, LLC 16
17 Advanced Fault Monitoring cont. Diagnostics Hunger for data is driving IoT expansion into Solar, EVs etc. Faults if any, should be logged along with a table of parameters that the voltage, current and temperature information at time of fault 2018 AgileSwitch, LLC 17
18 Configurability System Design Engineers should be able to quickly and efficiently change design parameters. This can be achieved with designs that incorporate software configurability of the critical parameters AgileSwitch, LLC 18
19 AgileSwitch Intelligent SiC Gate Drivers Advanced Control Augmented Switching TM Fault Monitoring 6 Unique Fault Codes vs. 1 Temperature & DC Link Monitoring Configurability Software Configurable Switching Parameters Connector Options 2018 AgileSwitch, LLC 19
20 Goal Achieved Performance Cost 2018 AgileSwitch, LLC 20
21 CASE STUDY 2018 AgileSwitch, LLC 21
22 Turn-On, Turn-Off and Short Circuit Comparison Parameter Value Units Notes Vdc 600 V DC Link Voltage Load 3 Ω Resistor Load Current 200 A Temperature 25 C Module Baseplate 1200 V Vdss Power Module 250 A 8 = 25 C 2018 AgileSwitch, LLC 22
23 200V/div 200A/div Turn-On V-Conventional Rg=5 V-Agile 3.75V, 300ns Comparative Analysis Coventional v AgileSwitch Gate Drivers SiC Power Device - Turn-On I-Conventional Rg=0.5 I-Agile 4.5V, 400ns, Rg0 I-Agile 3.75V, 300ns I-Conventional Rg=5 V-Conventional Rg=5 I-Conventional Rg=5 V-Conventional Rg=0.5 I-Conventional Rg=0.5 V-Agile 3.75V, 300ns I-Agile 3.75V, 300ns V-Agile 4.5V, 400ns, Rg0 I-Agile 4.5V, 400ns, Rg0 Vds = 600V Id = 200A V-Agile 4.5V, 400ns, Rg0 V-Conventional Rg= ns/div AgileSwitch, LLC 23
24 200V/div 200A/div Turn-Off, Overshoot Voltage Initial Comparative Analysis Conventional v AgileSwitch Gate Drivers SiC Power Device - Turn-Off V-Conventional Rg=5 I-Conventional Rg=5 V-Agile Rg0 4.5V, 400ns I-Agile Rg0 4.5, 400ns V-Agile 3.75V, 300ns I-Agile 3.75V, 300ns V-Conventional Rg=0.5 I-Conventional Rg= V-Conventional Rg=0.5 V-Agile Rg0 4.5V, 400ns V-Agile 3.75V, 300ns V-Conventional Rg= I-Conventional Rg=0.5 I-Agile Rg0 4.5, 400ns I-Conventional Rg=5 I-Agile 3.75V, 300ns Vds = 600V Id = 200A ns/div AgileSwitch, LLC 24
25 Short Circuit 1400 V-Agile 9V, 5V, 400ns, 200ns I-Agile 9V, 5V, 400ns, 200ns V-Conventional Rg=5 I-Conventional Rg= V-Conventional Rg=5 I-Conventional Rg=5 Vds = 600V Id = 1000A Rload = 0.6 ohm V/div V-Agile 9V, 5V, 400ns, I-Agile 9V, 5V, 400ns, 200ns 200ns A/div 1200 DSAT Comparative Analysis Conventional v AgileSwitch Gate Drivers SiC Power Device 50ns/div 2018 AgileSwitch, LLC
26 Results Turn-On, Turn-Off Losses, Overshoot Voltage Driver Rg (Ω) ATO Settings Overshoot (V) Turn-on loss (mj) Turn-off loss (mj) Total Loss (mj) Conventional 5 N/A AgileSwitch V, 300ns EM1 AgileSwitch 0 4.5V, 400ns EM1 Conventional 0.5 N/A Short Circuit Driver Rg (Ω) ATO Settings Short Circuit Detection Time (us) Peak Short Circuit Current (A) Overshoot (V) Conventional 5 N/A AgileSiwtch 0.5 9V, 400ns/ EM1 5V, 200ns 2018 AgileSwitch, LLC 26
27 Summary Parameter Worst Case Overshoot Voltage Switching Losses Short Circuit Detection time Peak Short Circuit Current Units V mj us A Gate Driver AgileSwitch Driver Conventional AgileSwitch Comparison notes % LOWER Overshoot Voltage % LOWER Switching Losses % FASTER Short Circuit Detection % LOWER Peak Short Circuit Current 2018 AgileSwitch, LLC 27
28 62EM1-Programmable 62mm Electrical Series Key Switch Driver Features: 7 Unique Fault conditions Temperature Monitoring, PWM Isolated High Voltage Monitoring, PWM 2 X 10W output power RoHS and UL compliant design Interface for 5V or 15V logic levels Gate drive voltage +20V/-5V Peak gate current +/-20A SiC Applications Software Programmable Features (8): Augmented Turn-Off TM (ATOff) Power supply under-voltage lockout (UVLO) Power supply over-voltage lockout (OVLO) Desaturation detection settings Dead time Fault lockout settings Automatic Reset settings 2018 AgileSwitch, LLC 28
29 SECONDARY FACTORS 2018 AgileSwitch, LLC 29
30 Cables Copious amounts of EMI is generated due to the blazingly fast switching of SiC MOSFETs This EMI creates problems with peripheral circuitry through common mode or radiated coupling System Design Engineers are aware of EMI mitigation techniques for circuits, but an often overlooked component are the cables! 2018 AgileSwitch, LLC 30
31 Cables Case Study A Power Stack was tested with the following variations of 20 Pin Cables between the controller and gate driver: Short 6 Flat Unshielded Ribbon Cable Long 15 Flat Unshielded Ribbon Cable 18 Twisted Pair Flat Shielded Ribbon Cable Short cables were found to work under all conditions, whereas the longer cables were more prone to noise pickup AgileSwitch, LLC 31
32 WHATS AHEAD 2018 AgileSwitch, LLC 32
33 Integration Necessary for widespread adoption Driver IC Series Non-Isolated Gate Driver Core High Power, High Voltage Driver IC Series Isolated Q Q Q AgileSwitch, LLC 33
34 AS100 Gate Driver IC Key Driver Features: Programmable Gate drive output voltage Augmented Switching Control TM Temperature Monitoring High Voltage Monitoring Overcurrent Protection UART Communication Applications Software Programmable Features: Augmented Turn-On TM Augmented Turn-Off TM Multi-Level parameters controlled with 0.25V step and 25ns time resolution Two independent Augmented Switching Control Sets Normal Operation DSAT Condition Power supply under-voltage lockout (UVLO) Power supply over-voltage lockout (OVLO) Over current protection DSAT voltage level and blanking time settings Fault lockout settings Automatic Reset settings 8 Fault conditions 2018 AgileSwitch, LLC 34
35 CONCLUSION 2018 AgileSwitch, LLC 35
36 Listen to the Market System Design Engineers demand high performance at a low cost. This can be achieved by: SiC Device Manufacturers: Multi-Source Standard Packaging Engineers/ System Design Engineers Use Advanced Gate Driver technologies to further improve SiC Device performance Look beyond $/A of the SiC power device 2018 AgileSwitch, LLC 36
37 About AgileSwitch 2018 AgileSwitch, LLC 37
38 Who we are Dedicated Gate Driver Design and Manufacturing Founded January 2010 by serial entrepreneurs Albert Charpentier and Rob Weber Based in Philadelphia, PA (US East Coast) Global sales, marketing and support 2018 AgileSwitch, LLC 38
39 National Labs Relationships AgileSwitch actively engages with DOE funded organizations PowerAmerica Institute Oak Ridge National Labs Jefferson National Labs Sandia National Labs AgileSwitch is also a member of working groups and road mapping committees 2018 AgileSwitch, LLC 39
40 How to Reach Us Website: Phone: (US) +44 (0) (Europe) Nitesh Satheesh: Cliff Robins: Rob Weber: 2018 AgileSwitch, LLC 40
41 Thank you 2018 AgileSwitch, LLC 41
EDEM3-Programmable EconoDual TM Electrical Series
EDEM3-Programmable EconoDual TM Electrical Series Optimized for Silicon Carbide (SiC) MOSFET Modules Overview The AgileSwitch EDEM3-EconoDual Electrical gate driver provides monitoring and fault reporting
More information62EM1-Programmable 62mm Electrical Series
62EM1-Programmable 62mm Electrical Series Optimized for Silicon Carbide (SiC) MOSFET Modules Overview The AgileSwitch 62EM1-62mm Electrical driver provides monitoring and fault reporting information to
More informationAgileSwitch Gate Drivers PPEM-PrimePack TM Electrical Series User Manual
AgileSwitch Gate Drivers PPEM-PrimePack TM Electrical Series User Manual PPEM-Primepack-Electrical Series Manual V01 PRELIMINARY Page 1 of 18 Contents Abstract... 3 Configurable Features... 3 AgileSwitch
More informationPCB layout guidelines. From the IGBT team at IR September 2012
PCB layout guidelines From the IGBT team at IR September 2012 1 PCB layout and parasitics Parasitics (unwanted L, R, C) have much influence on switching waveforms and losses. The IGBT itself has its own
More informationGate-Driver with Full Protection for SiC-MOSFET Modules
Gate-Driver with Full Protection for SiC-MOSFET Modules Karsten Fink, Andreas Volke, Power Integrations GmbH, Germany Winson Wei, Power Integrations, China Eugen Wiesner, Eckhard Thal, Mitsubishi Electric
More informationSiC Transistor Basics: FAQs
SiC Transistor Basics: FAQs Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. Oct. 9, 2013 Sam Davis
More informationRecommended External Circuitry for Transphorm GaN FETs. Zan Huang Jason Cuadra
Recommended External Circuitry for Transphorm GaN FETs Zan Huang Jason Cuadra Application Note Rev. 1.0 November 22, 2016 Table of Contents 1 Introduction 3 2 Sustained oscillation 3 3 Solutions to suppress
More informationUnleash SiC MOSFETs Extract the Best Performance
Unleash SiC MOSFETs Extract the Best Performance Xuning Zhang, Gin Sheh, Levi Gant and Sujit Banerjee Monolith Semiconductor Inc. 1 Outline SiC devices performance advantages Accurate test & measurement
More informationMAXREFDES121# Isolated 24V to 3.3V 33W Power Supply
System Board 6309 MAXREFDES121# Isolated 24V to 3.3V 33W Power Supply Maxim s power-supply experts have designed and built a series of isolated, industrial power-supply reference designs. Each of these
More informationDC Link. Charge Controller/ DC-DC Converter. Gate Driver. Battery Cells. System Controller
Integrate Protection with Isolation In Home Renewable Energy Systems Whitepaper Home energy systems based on renewable sources such as solar and wind power are becoming more popular among consumers and
More informationSGM2576/SGM2576B Power Distribution Switches
/B GENERAL DESCRIPTION The and B are integrated typically 100mΩ power switch for self-powered and bus-powered Universal Series Bus (USB) applications. The and B integrate programmable current limiting
More informationBAP1551 Gate Drive Board
Application Note and Datasheet for Half Bridge Inverters Figure 1: BAP1551 IGBT Gate Driver Board Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor (IGBT) Gate Drive Board (GDB)
More informationHow to Design an R g Resistor for a Vishay Trench PT IGBT
VISHAY SEMICONDUCTORS www.vishay.com Rectifiers By Carmelo Sanfilippo and Filippo Crudelini INTRODUCTION In low-switching-frequency applications like DC/AC stages for TIG welding equipment, the slow leg
More informationApplication Note 0009
Recommended External Circuitry for Transphorm GaN FETs Application Note 9 Table of Contents Part I: Introduction... 2 Part II: Solutions to Suppress Oscillation... 2 Part III: The di/dt Limits of GaN Switching
More informationRT8288A. 4A, 21V 500kHz Synchronous Step-Down Converter. General Description. Features. Applications. Ordering Information. Pin Configurations
4A, 21V 500kHz Synchronous Step-Down Converter General Description The is a synchronous step-down regulator with an internal power MOSFET. It achieves 4A of continuous output current over a wide input
More informationMAXREFDES116# ISOLATED 24V TO 5V 40W POWER SUPPLY
System Board 6283 MAXREFDES116# ISOLATED 24V TO 5V 40W POWER SUPPLY Overview Maxim s power supply experts have designed and built a series of isolated, industrial power-supply reference designs. Each of
More information4.5V to 32V Input High Current LED Driver IC For Buck or Buck-Boost Topology CN5816. Features: SHDN COMP OVP CSP CSN
4.5V to 32V Input High Current LED Driver IC For Buck or Buck-Boost Topology CN5816 General Description: The CN5816 is a current mode fixed-frequency PWM controller for high current LED applications. The
More informationDrive and Layout Requirements for Fast Switching High Voltage MOSFETs
Drive and Layout Requirements for Fast Switching High Voltage MOSFETs Contents Introduction SuperJunction Technologies Influence of Circuit Parameters on Switching Characteristics Gate Resistance Clamp
More informationTENTATIVE PP800D120-V01
Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS
More informationPresentation Content Review of Active Clamp and Reset Technique in Single-Ended Forward Converters Design Material/Tools Design procedure and concern
Active Clamp Forward Converters Design Using UCC2897 Hong Huang August 2007 1 Presentation Content Review of Active Clamp and Reset Technique in Single-Ended Forward Converters Design Material/Tools Design
More informationDESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION. 500KHz, 18V, 2A Synchronous Step-Down Converter
DESCRIPTION The is a fully integrated, high-efficiency 2A synchronous rectified step-down converter. The operates at high efficiency over a wide output current load range. This device offers two operation
More informationUNISONIC TECHNOLOGIES CO., LTD US2076 Preliminary CMOS IC
UNISONIC TECHNOLOGIES CO., LTD US2076 Preliminary CMOS IC DUAL HIGH-SIDE POWER SWITCH DESCRIPTION The UTC US2076 is a dual integrated high-side power switch particularly designed for self-powered and bus-powered
More informationRT A, 2MHz, Synchronous Step-Down Converter. General Description. Features. Applications. Ordering Information. Pin Configurations
4A, 2MHz, Synchronous Step-Down Converter General Description The is a high efficiency synchronous, step-down DC/DC converter. Its input voltage range is from 2.7V to 5.5V and provides an adjustable regulated
More informationA SiC MOSFET for mainstream adoption
A SiC MOSFET for mainstream adoption Power Electronics Conference 2017, Munich December 5th, 2017 Dr. Fanny Björk, Infineon Multiple levers for a SiC MOSFET must match System compatibility Performance
More informationPitch Pack Microsemi full SiC Power Modules
Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy
More informationRT9728C. 120mΩ, 1.3A Power Switch with Programmable Current Limit. General Description. Features. Applications. Pin Configurations
RT9728C 120mΩ, 1.3A Power Switch with Programmable Current Limit General Description The RT9728C is a cost effective, low voltage, single P-MOSFET high-side power switch IC for USB application with a programmable
More informationTO-247-3L Inner Circuit Product Summary C) RDS(on) Parameter Symbol Test Conditions Value Unit
Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary VDS ID(@25 C) RDS(on) 650V 110A 20mΩ Features Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen
More informationproton beam onto the screen. The design specifications are listed in Table 1.
The Spallation Neutron Source (SNS) utilizes an electron scanner in the accumulator ring for nondestructive transverse profiling of the proton beam. The electron scanner consists of a high voltage pulse
More informationFast switching and its challenges on Power Module Packaging and System Design
Fast switching and its challenges on Power Module Packaging and System Design Power Electronic Conference Munich 05/12/2017 Stefan Häuser Product Marketing International stefan.haeuser@semikron.com Johannes
More informationDesign and Characterization of a Three-Phase Multichip SiC JFET Module
Design and Characterization of a Three-Phase Multichip SiC JFET Module Fan Xu* fxu6@utk.edu Jing Wang* jwang50@utk.edu Dong Jiang* djiang4@utk.edu Fred Wang* fred.wang@utk.edu Leon Tolbert* tolbert@utk.edu
More informationRT7266 3A, 18V, 700kHz ACOTTM Synchronous Step-Down Converter General Description Features ACOTTM Mode Enables Fast Transient Response
RT A, V, 00kHz ACOT TM Synchronous Step-Down Converter General Description The RT is an adaptive on-time ACOT TM mode synchronous buck converter. The adaptive on-time ACOT TM mode control provides a very
More informationDP9126IX. Non-Isolated Buck APFC Offline LED Power Switch FEATURES GENERAL DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT
Non-Isolated Buck APFC Offline LED Power Switch DP9126IX FEATURES Active PFC for High PF and Low THD PF>0.9 with Universal Input Built-in HV Startup and IC Power Supply Circuit Internal 650V Power MOSFET
More informationFeatures: Phase A Phase B Phase C -DC_A -DC_B -DC_C
Three Phase Inverter Power Stage Description: The SixPac TM from Applied Power Systems is a configurable IGBT based power stage that is configured as a three-phase bridge inverter for motor control, power
More informationEfficiency improvement with silicon carbide based power modules
Efficiency improvement with silicon carbide based power modules Zhang Xi*, Daniel Domes*, Roland Rupp** * Infineon Technologies AG, Max-Planck-Straße 5, 59581 Warstein, Germany ** Infineon Technologies
More informationSingle-Channel Power Distribution Switch
FEATURES 3.0V to 5.5V Operating Range 1.0A Continuous Current 2.2A Accurate Current limiting 1.6A Short Circuit Current 80uA Typical On-State Supply Current 1uA Maximum Standby Supply Current Independent
More informationThermally enhanced Low V FB Step-Down LED Driver ADT6780
Thermally enhanced Low V FB Step-Down LED Driver General Description The is a thermally enhanced current mode step down LED driver. That is designed to deliver constant current to high power LEDs. The
More informationTO-220-3L Inner Circuit Product Summary C) RDS(on) Parameter Symbol Test Conditions Value Unit
H1M65B1 Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-22-3L Inner Circuit Product Summary VDS ID(@25 C) RDS(on) 65V 25A 1mΩ Features Low On-Resistance Low Capacitance Avalanche Ruggedness
More informationRT8299A 3A, 24V, 500kHz Synchronous Step-Down Converter General Description Features 3V to 24V Input Voltage Range 3A Output Current
3A, 24V, 500kHz Synchronous Step-Down Converter General Description The is a high efficiency, monolithic synchronous step-down DC/DC converter with internal power MOSFETs. It achieves 3A of continuous
More informationRT A, 21V 500kHz Synchronous Step-Down Converter. General Description. Features. Ordering Information RT8287. Applications. Pin Configurations
3A, 2V 500kHz Synchronous Step-Down Converter General Description The is a synchronous step-down regulator with an internal power MOSFET. It achieves 3A of continuous output current over a wide input supply
More informationVery high voltage AC-DC power: From 3-phase to single phase offline bias supplies. Bernard Keogh, Billy Long
Very high voltage AC-DC power: From 3-phase to single phase offline bias supplies Bernard Keogh, Billy Long 1 What will I get out of this session? Purpose: Design Considerations for low power bias supplies
More informationDual-Channel Power Distribution Switch
FEATURES 3.0V to 5.5V Operating Range 1.5A Continuous Current 3.3A Over Current Limiting 2.5A Short Circuit Current 100uA Typical On-State Supply Current 1uA Maximum Standby Supply Current Independent
More informationQUAD N-CHANNEL MOSFET POWER MODULE
M.S.KENNEDY CORP. QUAD N-CHANNEL MOSFET POWER MODULE 3013 4707 Dey Road Liverpool, N.Y. 13088 (315) 701-6751 FEATURES: Pin Compatible with MPM3013 QUAD Independent N - Channel MOSFETS Isolated Package
More informationTaking advantage of SiC s high switching speeds with optimizations in measurement, layout, and design
Taking advantage of SiC s high switching speeds with optimizations in measurement, layout, and design Dr. Kevin M. Speer Global Manager of Technology Strategy Power Semiconductors Power Electronics Conference
More informationSD4840/4841/4842/4843/4844
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION is a current mode PWM controller with low standby power and low start current for power switch. In standby mode, the circuit enters
More informationMP2314 High Efficiency 2A, 24V, 500kHz Synchronous Step Down Converter
The Future of Analog IC Technology MP2314 High Efficiency 2A, 24V, 500kHz Synchronous Step Down Converter DESCRIPTION The MP2314 is a high frequency synchronous rectified step-down switch mode converter
More informationInterleaved PFC technology bring up low ripple and high efficiency
Interleaved PFC technology bring up low ripple and high efficiency Tony Huang 黄福恩 Texas Instrument Sept 12,2007 1 Presentation Outline Introduction to Interleaved transition mode PFC Comparison to single-channel
More informationDirect Paralleling of SCALE-2 Gate Driver Cores
Direct Paralleling of SAL-2 ate s Introduction Parallel-connected IBTs are conventionally driven by a common driver, with individual gate and emitter resistors for each IBT. An alternative approach to
More informationSiC MOSFETs: Gate Drive Optimization
SiC MOSFETs: Gate Drive Optimization Steve Mappus Agenda SiC Introduction SiC MOSFET characteristics SiC MOSFET dynamic switching Discrete SiC gate drive circuit NCP51705 SiC MOSFET gate driver Distinguishing
More information2FSC0435+ Preliminary Datasheet 2FSC0435+ Absolute Maximum Ratings 2FSC0435+
Preliminary Datasheet Features - Short circuit Detection with Soft shutdown - UVLO - Optical Transmission for Better EMC - Intelligent Faults Management System Typical Applications AC - General purpose
More informationEnhancing Power Delivery System Designs with CMOS-Based Isolated Gate Drivers
Enhancing Power Delivery System Designs with CMOS-Based Isolated Gate Drivers Fully-integrated isolated gate drivers can significantly increase the efficiency, performance and reliability of switch-mode
More information2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationCascode Configuration Eases Challenges of Applying SiC JFETs
Application Note USCi_AN0004 March 2016 Cascode Configuration Eases Challenges of Applying SiC JFETs John Bendel Abstract The high switching speeds and low R DS(ON) of high-voltage SiC JFETs can significantly
More informationCONSONANCE. 4A, Standalone Li-ion Battery Charger IC With Photovoltaic Cell MPPT Function CN3791. General Descriptions: Features: Pin Assignment:
4A, Standalone Li-ion Battery Charger IC With Photovoltaic Cell MPPT Function CN3791 General Descriptions: The CN3791 is a PWM switch-mode lithium ion battery charger controller that can be powered by
More information2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2
More information2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More informationDriving egan TM Transistors for Maximum Performance
Driving egan TM Transistors for Maximum Performance Johan Strydom: Director of Applications, Efficient Power Conversion Corporation Alex Lidow: CEO, Efficient Power Conversion Corporation The recent introduction
More informationMP2225 High-Efficiency, 5A, 18V, 500kHz Synchronous, Step-Down Converter
The Future of Analog IC Technology DESCRIPTION The MP2225 is a high-frequency, synchronous, rectified, step-down, switch-mode converter with built-in power MOSFETs. It offers a very compact solution to
More informationTECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A
2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
More information2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary
PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A
More informationDual-Channel Power Distribution Switch
FEATURES 2.7V to 5.5V Operating Range 1.0A Continuous Current 2.2A Accurate Maximum Current limiting 1.6A Short Circuit Current 90uA Typical On-State Supply Current 1uA Maximum Standby Supply Current Independent
More informationUsing the Latest Wolfspeed C3M TM SiC MOSFETs to Simplify Design for Level 3 DC Fast Chargers
Using the Latest Wolfspeed C3M TM SiC MOSFETs to Simplify Design for Level 3 DC Fast Chargers Abstract This paper will examine the DC fast charger market and the products currently used in that market.
More informationFigure 1.1 Fully Isolated Gate Driver
Release Date: 3-4-09 1.0 Driving IGBT Modules When using high power IGBT modules, it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate
More informationFor buy, please contact: SIC9752/SIC9753/SIC9754_EN_Rev
General Description The are constant current LED regulators with high current accuracy which applies to single stage step-down power factor corrected LED drivers. 600V power MOSFET is integrated, which
More informationPMD110. Description and Application Manual for PMD110 High Power MOSFET/IGBT driver
Description and Application Manual for High Power MOSFET/IGBT driver high power field effect transistor (FET) drive module is specially designed for high power field effect transistor. It adapts transformer
More informationAdjustable Current Limited Power Distribution Switch
FEATURES 2.8V to 5.5V Operating Range Adjustable Current Limit : 200mA to 2.25A(Typ.) Fold-back Short Circuit Protection 130uA Typical On-State Supply Current 5uA Maximum Standby Supply Current Independent
More informationUnlocking the Power of GaN PSMA Semiconductor Committee Industry Session
Unlocking the Power of GaN PSMA Semiconductor Committee Industry Session March 24 th 2016 Dan Kinzer, COO/CTO dan.kinzer@navitassemi.com 1 Mobility (cm 2 /Vs) EBR Field (MV/cm) GaN vs. Si WBG GaN material
More informationMP V, 5A Dual Channel Power Half-Bridge
The Future of Analog IC Technology MP8046 28V, 5A Dual Channel Power Half-Bridge DESCRIPTION The MP8046 is a configurable full-bridge or dual channel half-bridge that can be configured as the output stage
More information1.0MHz,24V/2.0A High Performance, Boost Converter
1.0MHz,24V/2.0A High Performance, Boost Converter General Description The LP6320C is a 1MHz PWM boost switching regulator designed for constant-voltage boost applications. The can drive a string of up
More informationQuiet-Switching Power MOSFETs, FREDFETs, and IGBTs. Product Overview and Introduction Schedule
Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs Product Overview and Introduction Schedule TM What is MOS 8? A new generation of POWER MOS products from Microsemi Power Products Group (formerly Advanced
More informationACE726C. 500KHz, 18V, 2A Synchronous Step-Down Converter. Description. Features. Application
Description The is a fully integrated, high-efficiency 2A synchronous rectified step-down converter. The operates at high efficiency over a wide output current load range. This device offers two operation
More informationPOWER DELIVERY SYSTEMS
www.silabs.com Smart. Connected. Energy-Friendly. CMOS ISOLATED GATE S ENHANCE POWER DELIVERY SYSTEMS CMOS Isolated Gate Drivers (ISOdrivers) Enhance Power Delivery Systems Fully integrated isolated gate
More informationMP6901 Fast Turn-off Intelligent Controller
MP6901 Fast Turn-off Intelligent Controller The Future of Analog IC Technology DESCRIPTION The MP6901 is a Low-Drop Diode Emulator IC that, combined with an external switch replaces Schottky diodes in
More information2A, 23V, 380KHz Step-Down Converter
2A, 23V, 380KHz Step-Down Converter General Description The is a buck regulator with a built-in internal power MOSFET. It achieves 2A continuous output current over a wide input supply range with excellent
More informationRT6206A. 5.5A, 18V, 650kHz, ACOT TM Synchronous Step-Down Converter. General Description. Features. Applications. Ordering Information
5.5A, 18V, 650kHz, ACOT TM Synchronous Step-Down Converter General Description The is a synchronous step-down DC/DC converter with Advanced Constant On-Time (ACOT TM ) mode control. It achieves high power
More informationAutomotive Surge Suppression Devices Can Be Replaced with High Voltage IC
Automotive Surge Suppression Devices Can Be Replaced with High Voltage IC By Bruce Haug, Senior Product Marketing Engineer, Linear Technology Background Truck, automotive and heavy equipment environments
More informationLecture 4 ECEN 4517/5517
Lecture 4 ECEN 4517/5517 Experiment 3 weeks 2 and 3: interleaved flyback and feedback loop Battery 12 VDC HVDC: 120-200 VDC DC-DC converter Isolated flyback DC-AC inverter H-bridge v ac AC load 120 Vrms
More informationAN-1536 APPLICATION NOTE
AN- APPLICATION NOTE One Technology Way P.O. Box Norwood, MA -, U.S.A. Tel:.. Fax:.. www.analog.com ADuM Gate Driver Performance Driving APTMCAMCTAG SiC Power Switches by Martin Murnane INTRODUCTION In
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationD AB Z DETAIL "B" DETAIL "A"
QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B
More informationThe Quest for High Power Density
The Quest for High Power Density Welcome to the GaN Era Power Conversion Technology Drivers Key design objectives across all applications: High power density High efficiency High reliability Low cost 2
More informationSP6003 Synchronous Rectifier Driver
APPLICATION INFORMATION Predictive Timing Operation The essence of SP6003, the predictive timing circuitry, is based on several U.S. patented technologies. This assures higher rectification efficiency
More informationDesigning reliable and high density power solutions with GaN. Created by: Masoud Beheshti Presented by: Paul L Brohlin
Designing reliable and high density power solutions with GaN Created by: Masoud Beheshti Presented by: Paul L Brohlin What will I get out of this presentation? Why GaN? Integration for System Performance
More informationRT A, 2MHz, Synchronous Step-Down Converter. Features. General Description. Applications. Ordering Information. Marking Information
RT8064 2A, 2MHz, Synchronous Step-Down Converter General Description The RT8064 is a high efficiency synchronous, step-down DC/DC converter. Its input voltage range is from 2.7V to 5.5V and provides an
More informationRT6201A/B. 4A, 18V, 650kHz, ACOT TM Synchronous Step-Down Converter. General Description. Features. Applications. Pin Configurations
4A, 18V, 650kHz, ACOT TM Synchronous Step-Down Converter General Description The is a synchronous step-down DC/DC converter with Advanced Constant On-Time (ACOT TM ) mode control. It achieves high power
More informationZ-FeT TM Silicon Carbide MOSFET
CPMF-12-S16B Z-FeT TM Silicon Carbide MOSFET N-Channel Enhancement Mode Bare Die V DS R DS(on) Q g = 12 V = 16 mω = 47 nc Features Package Industry Leading R DS(on) High Speed Switching Low Capacitances
More informationABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in t
SP2526 +3.0V to +5.5V USB Power Control Switch Compliant to USB Specifications +3.0V to +5.5V Input Voltage Range Two Independent Power Switches Two Error Flag Outputs, Open Drain 2.7V Undervoltage Lockout
More informationRT8086B. 3.5A, 1.2MHz, Synchronous Step-Down Converter. General Description. Features. Ordering Information RT8086B. Applications. Marking Information
RT8086B 3.5A, 1.2MHz, Synchronous Step-Down Converter General Description The RT8086B is a high efficiency, synchronous step-down DC/DC converter. The available input voltage range is from 2.8V to 5.5V
More informationMP A, 55V, 100kHz Step-Down Converter with Programmable Output OVP Threshold
The Future of Analog IC Technology MP24943 3A, 55V, 100kHz Step-Down Converter with Programmable Output OVP Threshold DESCRIPTION The MP24943 is a monolithic, step-down, switch-mode converter. It supplies
More informationTurn-On Oscillation Damping for Hybrid IGBT Modules
CPSS TRANSACTIONS ON POWER ELECTRONICS AND APPLICATIONS, VOL. 1, NO. 1, DECEMBER 2016 41 Turn-On Oscillation Damping for Hybrid IGBT Modules Nan Zhu, Xingyao Zhang, Min Chen, Seiki Igarashi, Tatsuhiko
More information2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
More informationAPPLICATION NOTE 735 Layout Considerations for Non-Isolated DC-DC Converters
Maxim > App Notes > AUTOMOTIVE GENERAL ENGINEERING TOPICS POWER-SUPPLY CIRCUITS PROTOTYPING AND PC BOARD LAYOUT Keywords: printed circuit board, PCB layout, parasitic inductance, parasitic capacitance,
More informationIXZ631DF12N100 RF Power MOSFET & Driver 1000 V 12 A
DE75-N MOSFET and IXRFD6 Gate Driver Module Features Isolated substrate High isolation voltage (>5 V) Excellent thermal transfer Increased temperature and power cycling capability Low R DS(ON) Very low
More informationPreliminary 10K VIN SP2525A OVERCURRENT FLG IN GND. 33µF, 16V Tantalum, or 100µF, 10V Electrolytic Bold line indicate high-current traces
Preliminary SP2525A USB High-Side Power Switch FEATURES +3.0V to +5.5V Input Voltage Range 500mA Continuous Load Current per Channel 2.6V Undervoltage Lockout 1.25A Short Circuit Current Limit 100mΩ Maximum
More informationDP9122 Non-isolated Quasi-Resonant Buck LED Power Switch
FEATURES GENERAL DESCRIPTION Integrated with 500V MOSFET No Auxiliary Winding Needed Quasi-Resonant for High Efficiency Built-in Thermal Foldback Built-in Charging Circuit for Fast Start-Up ±4% CC Regulation
More informationWide band gap circuit optimisation and performance comparison
Wide band gap circuit optimisation and performance comparison By Edward Shelton & Dr Patrick Palmer Presentation for SF Bay IEEE Power Electronics Society (PELS) 29 th June 2017 Electronic and Electrical
More informationVGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International
More informationMP A, 24V, 1.4MHz Step-Down Converter
The Future of Analog IC Technology DESCRIPTION The MP8368 is a monolithic step-down switch mode converter with a built-in internal power MOSFET. It achieves 1.8A continuous output current over a wide input
More informationDRIVER IGBT 3066 DESCRIPTION TECHNICAL SPECIFICATIONS 1/5
DESCRIPTION Driver for high range double IGBTs, working between 1200-1700V. This driver by itself can control a branch (TOP and BOTTOM). This card, unlike another type of Driver is personalized from factory.
More informationMP kHz, 55V Input, 2A High Power LED Driver
The Future of Analog IC Technology MP2488 200kHz, 55V Input, 2A High Power LED Driver DESCRIPTION The MP2488 is a fixed frequency step-down switching regulator to deliver a constant current of up to 2A
More informationGen 2 SiC MOSFETs Extends the Benefits of Silicon Carbide in Industrial Applications
Gen 2 SiC MOSFETs Extends the Benefits of Silicon Carbide in Industrial Applications Dr. Vladimir Scarpa, Salvatore La Mantia Michele Macauda, Luigi Abbatelli December 4 th 2018 Contents 2 Silicon Carbide
More information