RSSI/Carrier Sense Sequence
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1 RSSI/Carrier Sense Sequence Semiconductor Business Division AIS Company Panasonic Corporation 1 AP-MN87400_
2 CONTENTS 1 PURPOSE RSSI MEASUREMENT SEQUENCE SETTING AT STARTUP SETTING PROCEDURE FOR RSSI MEASUREMENT When Diversity Is Not Used When Diversity Is Used RSSI MEASUREMENT RESULT CARRIER SENSE SEQUENCE SETTING AT STARTUP PROCEDURE FOR CARRIER SENSE When Diversity Is Not Used When Diversity Is Used AP-MN87400_
3 1 Purpose This application note provides the sequence for performing RSSI measurement and pre-transmission carrier sense by using. 2 RSSI Measurement Sequence When issuing an RSSI measurement request while the chip operation mode is set to TRX mode, the measurement result may be largely different from the actual signal level depending on the state inside the chip. To perform RSSI measurement accurately, carry out the measurement through the following sequence. 2.1 Setting at Startup Set the RF_RXSTART_PARA (RF setting parameter stored at the frame memory addresses of 3a0h or later) as follows: Offset Command 3a0h 0Ah 3a1h 01h 8Ah 3a3h 03h 8Ah 3a5h 43h 81h 3a7h 1Fh 85h 3a9h 61h BFh The setting are same as application not AP--004 (basic setting example). Set the PERI_CNT1 register (140h),antenna controlling register, to diversity OFF mode. 3 AP-MN87400_
4 2.2 Setting Procedure for RSSI Measurement Use the following sequence to measure RSSI. The sequence varies depending on whether diversity is used or not. The register value depending on whether the LSI version is ES or others. Refer to the application note "AP_MN87400_004_Basic_setting_ex" for the judgment method of the LSI version When Diversity Is Not Used 1. Set the chip operation mode to RXWAIT. (Set bit[1] of the OPE_MODE register (000h) to 0. Setting example: RW 000h, 0F39h) 2. Change the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 037Fh. Setting example: RW 206h, 037Fh) Others : (Set the RC_TRIM register (206h) to 010Fh. Setting example: RW 206h, 010Fh) 3. Set the RSSI measurement request. (Set bit[3] of the RXFRMCTR register (005h) to 1. Setting example: RW 005h, 0008h) 4. Set the chip operation mode to TRX. (Set bit[1] of the OPE_MODE register (000h) to 1. Setting example: RW 000h, 0F3Bh) 5. Read the RSSI values, after the measurement completion that can be known using an RSSI complete interrupt or other interrupts. (Read bit[15:8] of the RXFRMCTR register (005h). ) 6. Reset the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 0377h. Setting example: RW 206h, 0377h) Others : (Set the RC_TRIM register (206h) to 0000h. Setting example: RW 206h, 0000h) 4 AP-MN87400_
5 2.2.2 When Diversity Is Used Stop the diversity operation once and perform RSSI measurement using an antenna specified with the PERI_CNT1 register. After the RSSI measurement, restart the diversity operation. 1. Set the chip operation mode to RXWAIT. (Set bit[1] of the OPE_MODE register (000h) to 0. Setting example: RW 000h, 0F39h) 2. Set the diversity to OFF. (Set bit[15] of the DIVER register (126h) to 0. Setting example: RW 126h, 005Fh) 3. Change the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 037Fh. Setting example: RW 206h, 037Fh) Others : (Set the RC_TRIM register (206h) to 010Fh. Setting example: RW 206h, 010Fh) 4. Set the RSSI measurement request. (Set bit[3] of the RXFRMCTR register (005h) to 1. Setting example: RW 005h, 0008h) 5. Set the chip operation mode to TRX. (Set bit[1] of the OPE_MODE register (000h) to 1. Setting example: RW 000h, 0F3Bh) 6. Read the RSSI values, after the measurement completion that can be known using an RSSI complete interrupt or other interrupts. (Read bit[15:8] of the RXFRMCTR register (005h). ) 7. Set the chip operation mode to RXWAIT. (Set bit[1] of the OPE_MODE register (000h) to 0. Setting example: RW 000h, 0F39h) 8. Reset the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 0377h. Setting example: RW 206h, 0377h) Others : (Set the RC_TRIM register (206h) to 0000h. Setting example: RW 206h, 0000h) 5 AP-MN87400_
6 9. Set the diversity to ON. (Set bit[15] of the DIVER register (126h) to 1. Setting example: RW 126h, 805Fh) 10. Set the chip operation mode to TRX. (Set bit[1] of the OPE_MODE register (000h) to 1. Setting example: RW 000h, 0F3Bh) 2.3 RSSI Measurement Result The measurement conditions are as follows: Center frequency: 920 MHz / 2440 MHz Bit rate:100 Kbps Measurement temperature: 25 C The RSSI measurement result for MN87400 at the center frequency of 920 MHz is as follows: Input wave is a non-modulated signal with the center frequency (Fc) of 920 MHz. The guaranteed operation range is between -95 dbm and -10 dbm. -95dBm RSSI measurement result Center freq=920mhz -10dBm Register (DEC) Guaranteed operation range Input Level [dbm] AP-MN87400_
7 The RSSI measurement result for MN87400 at the center frequency of 2440 MHz is as follows: Input wave is a non-modulated signal with the center frequency (Fc) of 2440 MHz. The guaranteed operation range is between -95 dbm and -30 dbm. -95dBm RSSI measurement result Center freq=2440mhz -30dBm Register (DEC) Guaranteed operation range Input Level [dbm] AP-MN87400_
8 3 Carrier Sense Sequence When performing carrier sense before transmission, the state of the carrier may be false detected due to RSSI measurement error. To reduce the probability of false detection, use the following sequence. In addition, automatic back-off function before frame transmission cannot be used. 3.1 Setting at Startup Make the settings same as the RSSI measurement. To stop the automatic back-off before frame transmission, set bit[11] of the OPE_MODE register (000h) to 1. 8 AP-MN87400_
9 3.2 Procedure for Carrier Sense Use the following sequence to execute carrier sense. The sequence varies depending on whether diversity is used or not When Diversity Is Not Used 1. Set the chip operation mode to RXWAIT. (Set bit[1] of the OPE_MODE register (000h) to 0. Setting example: RW 000h, 0F39h) 2. Change the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 037Fh. Setting example: RW 206h, 037Fh) Others : (Set the RC_TRIM register (206h) to 010Fh. Setting example: RW 206h, 010Fh) 3. Set AGC to the maximum gain fixed mode. (Set bit[7] of the AGC_CTR register (10bh) to 1. Setting example: RW 10bh, 0D8Fh) 4. Set the value of SYNC_DELAY to 0. (Set bit[15:8] of the SFDTIMEOUT register (108h) to 00h. Setting example: RW 108h, 000Ah) 5. Set the back-off request. (Set bit[6] of the TXFRMCTR register (004h) to 1. Setting example: RW 004h, 0040h) 6. Set the chip operation mode to TRX. (Set bit[1] of the OPE_MODE register (000h) to 1. Setting example: RW 000h, 0F3Bh) 7. Read the back-off result, after the measurement completion that can be known using a back-off complete interrupt or other interrupts. (Read bit[7] of the TXFRMCTR register (004h). ) When bit[7]=1, The channel is IDLE. When bit[7]=0, The channel is BUSY.) 8. Reset the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 0377h. Setting example: RW 206h, 0377h) Others : (Set the RC_TRIM register (206h) to 0000h. Setting example: RW 206h, 0000h) 9 AP-MN87400_
10 9. Cancel the gain fixed mode of AGC. (Set bit[7] of the AGC_CTR register (10bh) to 0. Setting example: RW 10bh, 0D7Fh) 10. Set the value of SYNC_DELAY to 25h. (Set bit[15:8] of the SFDTIMEOUT register (108h) to 25h. Setting example: RW 108h, 250Ah) After the back-off is done in step 7, if not busy, start a frame transmission (with no automatic back-off). Refer to the application note "AP_MN87400_002_FrameTXRX" for the frame transmission method. When performing a carrier sense before transmission while widening the channel width, insert the channel filter setting before step 3. To ensure the reception performance, re-set the channel filter according to the reception signal band, after executing carrier sense. When not performing ACK frame reception, it is no problem to make the re-setting of channel filter and the settings in steps 8, 9 and 10 after transmission is completed. 10 AP-MN87400_
11 The following is a result of executing a carrier sense after setting the system so that the carrier is detected as "busy" at an input level of -90 dbm. The error of RSSI detection is around 1 db, thereby producing a difference of 1 db in the detection result, however operation is stable. Measurement Conditions: Center frequency = 920 MHz GFSK 100 Kbps (M = 1.0) Number of executions = 300 times for each input level Setting of detection value =1Dh (RW 10c 1d 15) Carrier detection = Repeating 3 times (RW ) Carrier Sense Detection Result(Detect Threshold=-90dBm) 120.0% THRESHOLD 100.0% IDLE Detection Probability 80.0% 60.0% 40.0% Board A Board B Board C 20.0% 0.0% Input Signal Strength (dbm) 11 AP-MN87400_
12 3.2.2 When Diversity Is Used Stop the diversity operation once and perform a carrier sense and transmission using an antenna specified with the PERI_CNT1 register. After the transmission, restore the diversity operation. 1. Set the chip operation mode to RXWAIT. (Set bit[1] of the OPE_MODE register (000h) to 0. Setting example: RW 000h, 0F39h) 2. Set the diversity to OFF. (Set bit[15] of the DIVER register (126h) to 0. Setting example: RW 126h, 005Fh) 3. Change the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 037Fh. Setting example: RW 206h, 037Fh) Others : (Set the RC_TRIM register (206h) to 010Fh. Setting example: RW 206h, 010Fh) 4. Set AGC to the maximum gain fixed mode. (Set bit[7] of the AGC_CTR register (10bh) to 1. Setting example: RW 10bh, 0D8Fh) 5. Set the value of SYNC_DELAY to 0. (Set bit[15:8] of the SFDTIMEOUT register (108h) to 00h. Setting example: RW 108h, 000Ah) 6. Set the back-off request. (Set bit[6] of the TXFRMCTR register (004h) to 1. Setting example: RW 004h, 0040h) 7. Set the chip operation mode to TRX. (Set bit[1] of the OPE_MODE register (000h) to 1. Setting example: RW 000h, 0F3Bh) 8. Read the back-off result, after the measurement completion that can be known using a back-off complete interrupt or other interrupts. (Read bit[7] of the TXFRMCTR register (004h). ) When bit[7]=1, The channel is IDLE. When bit[7]=0, The channel is BUSY.) 9. Reset the adjustment value of RF. ES : (Set the RC_TRIM register (206h) to 0377h. 12 AP-MN87400_
13 Setting example: RW 206h, 0377h) Others : (Set the RC_TRIM register (206h) to 0000h. Setting example: RW 206h, 0000h) 10. Cancel the gain fixed mode of AGC. (Set bit[7] of the AGC_CTR register (10bh) to 0. Setting example: RW 10bh, 0D7Fh) 11. Set the value of SYNC_DELAY to 25h. (Set bit[15:8] of the SFDTIMEOUT register (108h) to 25h. Setting example: RW 108h, 250Ah) 12. Set the chip operation mode to RXWAIT. (Set bit[1] of the OPE_MODE register (000h) to 0. Setting example: RW 000h, 0F39h) 13. Set the diversity to ON. (Set bit[15] of the DIVER register (126h) to 1. Setting example: RW 126h, 805Fh) 14. Set the chip operation mode to TRX. (Set bit[1] of the OPE_MODE register (000h) to 1. Setting example: RW 000h, 0F3Bh) After the back-off is done in step 8, if not busy, start a frame transmission (with no automatic back-off). Refer to the application note "AP_MN87400_002_FrameTXRX" for the frame transmission method. When performing a carrier sense before transmission while widening the channel width, insert the channel filter setting before step 4. To ensure the reception performance, re-set the channel filter according to the reception signal band, after executing carrier sense. When not performing ACK frame reception, it is no problem to make the re-setting of channel filter and the settings in steps from 9. to 14.after transmission is completed. 13 AP-MN87400_
14 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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Established : 2-6-7 Revised : 23-7- Doc No. TT-EA-2566 FK6K2L Silicon N-channel For switching 2. FK6K2L.2 Unit : mm.3 Features Low drain-source On-state Resistance:RDS(on)typ. = 3 m (VGS =.5 V) Low drive
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ICs for Audio Common Use AN -W BTL audio power amplifier Overview The AN is an audio power amplifier IC with -ch output. The BTL (Balanced Transformer-Less) method can provide fewer external parts and
More informationFC R FC R. Dual N-channel MOSFET. For switching. Internal Connection. Pin name
FC6546R Dual N-channel MOSFET For switching FC6546R Unit: mm Features Low drive voltage:.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V- / MSL:Level compliant) Marking Symbol: V6 Basic Part
More informationMTM761100LBF MTM761100LBF. Silicon P-channel MOSFET For Switching. Doc No. TT4-EA Revision. 2. Internal Connection. Pin Name
Established : 28-31 Revised : 2135 Doc No. TT4-EA443 MTM711LBF Silicon P-channel MOSFET For Switching Features Low Drain-source On-state Resistance : RDS(on) typ. = 3 m (VGS = -4. V) Low Drive Voltage
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ICs for / Tuner AN7289NSC -FE+ IC for car radio Overview The AN7289NSC is an IC having -FE+ functions for car radio. A tuner block of car radio can be constructed by combination of this IC and the AN7293NSC
More informationMTM861280LBF MTM861280LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 2. For Switching. Internal Connection.
Established : 2-2-4 Revised : 237 Doc No. TT4-EA238 MTM8628LBF Silicon P-channel MOSFET For Switching MTM8628LBF Unit : mm Features Low drain-source On-state Resistance : RDS(on) typ. = 3 mω (VGS = -4.
More informationFC8J33040L FC8J33040L. Dual N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching For DC-DC Converter. Internal Connection.
Established : --3 Revised : 3--3 Doc No. TT4-EA-33 FC8J334L FC8J334L Dual N-channel MOSFET For switching For DC-DC Converter 8.9 Unit: mm.3. Features Low drain-source On-state Resistance : RDS(on) typ
More informationMTM861270LBF MTM861270LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 4. For Switching. Internal Connection.
Established : 28-9 Revised : 213 Doc No. TT4-EA34 MTM8127LBF Silicon P-channel MOSFET For Switching MTM8127LBF 1. 5.2 4 Unit : mm.13 Features Low drain-source On-state Resistance : RDS(on) typ = 8 m (VGS
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ICs for TV AN723 3-W BTL audio power amplifier Overview The AN723 is an audio power amplifier IC of -ch. output. In the BTL (balanced transformerless) method, fewer external parts and easier design for
More informationFCAB22370L1 Gate resistor installed Dual N-channel MOS FET
Established : 205--23 Doc No. TT4-EA-5073 Revision. Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits 3.05 6 5 4 Unit: mm Features Low source-source ON resistance:rss(on)
More informationDB2J41100L DB2J41100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection
Established : 9--9 Revised : 3-4- Doc No. TT4-E-487 Revision. DBJ4L Silicon epitaxial planar type For rectification.5.35 DBJ4L Unit: mm.3 Features Low forward voltage and low reverse leakage current Short
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Optoisolators (Photocouplers) This product complies with the RoHS Directive (EU 22/95/EC). CNZ373 (ON373) Optoisolators Overview The CNZ373 of optoisolators consist of a GaAs infrared LED which is optically
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Zener Diodes Silicon planar type For constant voltage, constant current, waveform clipper and surge absorption circuit Features SS-Mini type 2-pin package (SSMini2-F) Low noise type V Z rank classified(v
More informationDB2W31800L DB2W31800L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 4. For rectification. Internal Connection
Silicon epitaxial planar type For rectification.6 Unit: mm.3 Features Low forward voltage VF Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V- / MSL:Level compliant).6 3.5 Marking
More informationFK L FK L. Silicon N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching FK in SSSMini3 type package
Established : 2-5-2 Revised : 2-8-8 Doc No. TT4-EA-2592 FK6L Silicon N-channel MOSFET For switching FK56 in SSSMini type package.2. FK6L Unit : mm. Features Low drive voltage : 2.5 V drive Halogen-free
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DATA SHEET Part No. Package Code No. SOP008-P-0225G includes following four Product lifecycle stage. Publication date: October 2008 Contents Overview. 3 Features. 3 Applications. 3 Package.. 3 Type.. 3
More informationDB2L32400L For rectification
Doc No. 4-EA-14995 For rectification Features Average Forward Current IF(AV) 0.5 A rectification is possible Low Forward Voltage High power capability due to Chip Size Package RoHS compliant (EU RoHS /
More informationFCAB21520L1 Gate resistor installed Dual N-channel MOS FET
Doc No. TT4-ZZ-004 Revision. Established : 06--09 FCAB50L FCAB50L Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits Unit: mm Features Source-source ON resistance:rss(on)
More informationFG R FG R. Silicon N-channel MOSFET(FET1) Silicon P-channel MOSFET(FET2) Doc No. TT4-EA Revision. 2.
Established : 2-6-3 Revised : 23-- Doc No. TT4-EA-2659 FG6943R Silicon N-channel MOSFET(FET) Silicon P-channel MOSFET(FET2).6 FG6943R.2 Unit : mm.3 For switching 6 5 4.2.6 Features Low drive voltage: 2.5
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ICs for Audio Common Use AN74 Dual. Audio Power Amplifier Overview The AN74 is an integrated circuit designed for power amplifier of. (9V, 4Ω) output. Stereo operation is enabled due to incorporating two
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DATA SHEET Part No. Package Code No. HSIP003-P-0000Q includes following four Product lifecycle stage. Publication date: October 2008 1 DATA SHEET Part No. Package Code No. HSIP003-P-0000Q includes following
More information1.0 V Zener voltage *1, *2 VZ IZ = 5 ma Zener operating resistance RZ IZ = 5 ma. 40 Zener rise operating resistance RZK IZ = 0.
Established : 009-0-4 Revised : 03-07-0 Doc No. TT4-EA-546 Silicon epitaxial planar type For constant voltage / For surge absorption circuit.5 0.35 Unit: mm 0.3 Features Excellent rising characteristics
More informationDB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection
Established : -3- Revised : 3-4- Doc No. TT4-EA-49 Revision. DB466L Silicon epitaxial planar type For rectification Features Low forward voltage VF Forward current (Average) IF(AV) = 3 A rectification
More informationFC6B22500L Gate resistor installed Dual N-channel MOS FET
Doc No. TT4-ZZ-0200 Revision. Established : 206-0-07 Revised : 206-2-07 Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits Unit: mm Features Source-source On-state
More informationFC R FC R. Dual N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin name
Established : --5 Revised : 3-7-4 Doc No. TT4-EA-5 FC94R Dual N-channel For switching. FC94R. Unit : mm.3 Features Low drive voltage:.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V- / MSL :
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ICs for TV AN22 Dual -W BTL audio power amplifier Overview AN22 is an audio power amplifier IC for the stereo system. In the BTL (balanced transformerless) method, fewer external parts and easier design
More informationFC R FC R. Dual N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin name
Established : 2-5-7 Revised : 23-7- Doc No. TT4-EA-2578 FC6943R Dual N-channel For switching.6 FC6943R.2 Unit : mm.3 Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94
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ICs for / Tuner AN77, AN77S Tuner, / IF Amplifier Circuit Overview The AN77 and the AN77S are the ICs designed for Hi-Fi stereo tuner. They are functioned with stop signal pin besides the AN7S function.
More informationFCAB22370L Gate resistor installed Dual N-channel MOS FET
Established : 205--23 Doc No. TT4-EA-5074 Revision. Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits 3.05 6 5 4 Unit: mm Features Low source-source ON resistance:rss(on)
More informationPackaging 1. Cathode 2. Anode V Zener operating resistance. 40 Reverse current IR VR = 2.0 V
Established : 20-03- Revised : 203-05-08 Doc No. TT4-EA-32 Silicon epitaxial planar type For constant voltage / For surge absorption circuit DZ24056 in Mini2 type package.6 Unit: mm 0.3 Features Excellent
More informationLNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3)
LNCTPKWW Description LNCTPKWW is a MOCVD fabricated 66 nm and 78 nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. Package
More informationLNCQ28PS01WW. Description. Package. Features. Pin assignment. Applications. Absolute Maximum Ratings. Electrical and Optical Characteristics
Description is a MOCVD fabricated 660nm band wavelength laser diode with multi quantum well structure, using TO-56 CAN package to ensure versatile use. Features Wavelength: 661 nm (typ.) High output power:
More informationMin. Max 40. Symbol VR V Reverse Current IR VR = 40 V Terminal Capacitance Ct VR = 10 V, f = 1 MHz VF IF = 1.0 A
Doc No. 4-EA-4983 For rectification Features Low forward voltage VF Forward current (Average) IF(AV).0 A rectification is possible RoHS compliant (EU RoHS / MSL:Level compliant) Marking Symbol: D5 Packaging
More informationMTM763200LBF MTM763200LBF. Silicon N-channel MOSFET (FET1) Silicon P-channel MOSFET (FET2) Doc No. TT4-EA Revision. 2
Established : 28-3-7 Revised : 23--7 Doc No. TT4-EA-567 MTM7632LBF Silicon N-channel MOSFET (FET) Silicon P-channel MOSFET (FET2) For Switching For DC-DC Converter 6 MTM7632LBF 2. 5.2 4 Unit : mm.3 Features
More informationItem Symbol Min. Typ. Max. Unit Condition. Threshold current Ith ma. Operating current Iop ma
LNCQ Description LNCQ is a MOCVD fabricated 66nm band wavelength laser diode with multi quantum well structure, using TO-56 CAN package to ensure versatile use. Features Wavelength: 66 nm (typ.) High output
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ICs for Audio Common Use AN7555Z BTL output power IC for car audio Overview The AN7555Z is an audio power IC developed as the sound output of car audio (35 W 4-channel). It has realized the voltage gain
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Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L SC7L Asymmetric Dual Silicon N-ch Power 5..9 Unit : mm. For DC-DC Converter 7 5 Features Low Drain-source On-state Resistance : RDS(on) typ. FET : m
More informationSC L Asymmetric Dual Silicon N-ch Power MOS FET
Established : 3-- Revised : 3-5-9 Doc No. TT-EA-5 Revision. SC73L SC73L Asymmetric Dual Silicon N-ch Power 5..9 Unit : mm. For DC-DC Converter 7 5 Features Low Drain-source On-state Resistance : RDS(on)
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ICs for T AN5177NK IF/SIF Signal Processor IC for T and CR Overview The AN5177NK is a IF/SIF signal processor IC for T and CR. Features PLL full-synchronization detection An equalization amplifier for
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MN Series MN 8-Stage Ultra Low Voltage Operation BBD for Audio Signals Overview The MN is a 8-stage ultra low voltage operation BBD variable delay line in audio frequency range. The device operates on
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Zener Diode installed separate type dual P-channel For passive cell balancing circuits 2.0 0.2 Unit : mm 0.13 Features Build in Gate Resistor Drain-source ON-state Resistance : RDS(on) typ. = 280 mω (VGS
More informationFC4B21320L Gate resistor installed Dual N-channel MOS FET
Established : 0-09-0 Doc No. TT-EA-500 Revision. FCB0L FCB0L Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits 0.8 Unit: mm 0.8 Features Source-source ON resistance:rss(on)
More informationDB2F43100L For rectification
Doc No. A4-ZZ-00 Revision. Established : 07-0-0 Revised : 07-05-3 For rectification Features Low forward voltage VF Forward current (Average) IF(AV) 5.0 A rectification is possible RoHS compliant (EU RoHS
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Resistors, Zener Diode installed N-channel For passive cell balancing circuits 2.0 0.2 Unit : mm 0.3 Features Build in Gate Resistor, Gate-source Resistor and Zener Diode Drain-source ON-state Resistance
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ICs for Audio Common Use ANN Dual.W Audio Power Amplifier Overview The ANN is an integrated circuit designed for power amplifier of.w (.V, Ω) output. Stereo operation is enabled due to incorporating two
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ICs for Audio Common Use AN9 Dual.W Audio Power Amplifier Overview The AN9 is an integrated circuit designed for low distortion, low noise and low power dissipation audio set of.w (.V, Ω) output. Stereo
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This product complies with the RoS Directive (EU 2002/95/EC). Infrared Optical Module (IrDA) Infrared data link for cellular phones, peripheral devices Features Compliant with IrDA Ver.1.4 ight emitting
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ICs for Audio Common Use AN Dual Channel BTL Power Amplifier Overview AN is a monolithic integrated circuit designed for. W ( V, Ω) output audio power amplifier.it is a dual channel BTL IC suitable for
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