NCS2200, NCS2200A, NCS2202, NCS2202A. Comparators, 0.85 V to 6 V, 10 A, 1 s, Rail-to-Rail, Open Drain and Push-Pull Outputs

Size: px
Start display at page:

Download "NCS2200, NCS2200A, NCS2202, NCS2202A. Comparators, 0.85 V to 6 V, 10 A, 1 s, Rail-to-Rail, Open Drain and Push-Pull Outputs"

Transcription

1 NCS22, NCS22, NCS222, NCS222 Comparators,.8 V to 6 V,, s, Rail-to-Rail, Open Drain and Push-Pull Outputs The NCS22 series is an industry first subone volt, low power comparator family. These devices consume only of supply current. They are guaranteed to operate at a low voltage of.8 V which allows them to be used in systems that require less than. V and are fully operational up to 6. V which makes them convenient for use in both 3. V and. V systems. dditional features include no output phase inversion with overdriven inputs, internal hysteresis, which allows for clean output switching, and railtorail input and output performance. The NCS22 Series is available in complementary pushpull and open drain outputs and a variety of packages. There are two industry standard pinouts for SOT23 and SC7 packages. The NCS22 is also available in the tiny DFN 2x2.2 package. The NCS22 and NCS222 are available in a UDFN.2x. package. See package option information in Table on page 2 for more information. 6 SOT23 (TSOP) SN SUFFIX CSE 483 DFN 2x2.2 SQL SUFFIX CSE 488 SC7 SQ SUFFIX CSE 49 Features Operating Voltage of.8 V to 6. V RailtoRail Input/Output Performance Low Supply Current of No Phase Inversion with Overdriven Input Signals Glitchless Transitioning in or out of TriState Mode Complementary or Open Drain Output Configuration Internal Hysteresis Propagation Delay of. s for NCS22 NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; ECQ Qualified and PPP Capable These Devices are PbFree and are RoHS Compliant Typical pplications Single Cell NiCd/NiMH Battery Powered pplications utomotive UDFN.2x. MU SUFFIX CSE 7 ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. DEVICE MRKING INFORMTION See general marking information in the device marking section on page 4 of this data sheet. End Products Cellphones, Smart Phones larm and Security Systems Personal Digital ssistants Semiconductor Components Industries, LLC, 2 March, 28 Rev. 2 Publication Order Number: NCS22/D

2 Table. COMPRTOR SELECTOR GUIDE Output Type Package Pinout Style utomotive Device Complementary PushPull Open Drain UDFN,.2x. SOT23 SC7 2 N/ No NCS22MUTG N/ Yes NCV22MUTBG* 2 No Yes No Yes No Yes NCS22SNTG NCV22SNTG* NCS22SN2TG NCV22SN2TG* NCS22SQ2T2G NCV22SQ2T2G* DFN, 2x2.2 N/ No NCS22SQLTG SOT23 SC7 No NCS222SNTG 2 No Yes NCS222SN2TG NCV222SN2TG* No NCS222SQT2G 2 No NCS222SQ2T2G UDFN,.2 x. N/ No NCS222MUTBG *NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; ECQ Qualified and PPP Capable. Output NonInverting Input 2 3 PIN CONNECTIONS V EE V EE Inverting NonInverting 3 Input Input Style Pinout (SNT) Output 4 Inverting Input Style 2 Pinout (SN2T, SQ2T2) Figure. SOT23 (NCS22, NCS222), SC7 (NCS22, NCS222) V EE 6 V OUT V EE 6 V OUT 2 NC NC 2 IN 3 4 IN+ IN 3 4 IN+ Top View Figure 2. DFN 2x2.2 (NCS22) Top View Figure 3. UDFN.2x. (NCS22/NCS222) 2

3 MXIMUM RTINGS Rating Symbol Value Unit Supply Voltage Range ( to V EE ) V S 6. V Noninverting/Inverting Input to V EE V CM.2 to ( +.2) V Operating Junction Temperature T J C Operating mbient Temperature Range NCS22, NCS222, NCS22, NCS222 NCV22, NCV222, NCV22 T 4 to + 4 to +2 Storage Temperature Range T stg 6 to + C Output Short Circuit Duration Time (Note ) t S Indefinite s ESD Tolerance (Note 2) NCS22 Human Body Model Machine Model NCS222 Human Body Model Machine Model NCS22 Human Body Model Machine Model NCS222 Human Body Model all pins except output Human Body Model output pin Machine Model Thermal Resistance, Junctiontombient TSOP DFN (Note 3) SC7 UDFN ESD HBM MM HBM MM HBM MM HBM HBM MM R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. The maximum package power dissipation limit must not be exceeded. PD T J(max) T R J 2. ESD data available upon request. 3. For more information, refer to application note, ND88/D. C V C/W 3

4 NCS22 ELECTRICL CHRCTERISTICS (For all values =.8 V to 6. V, V EE = V,, unless otherwise noted.) (Note 4) Symbol Parameter Conditions Min Typ Max Unit V HYS Input Hysteresis mv V IO Input Offset Voltage =.8 V T = T Low to T High (Note ) mv = 3. V 6. T = T Low to T High 8. = 6. V. T = T Low to T High 7. V CM Common Mode Voltage Range V EE to V I LEK Output Leakage Current = 6. V 3.3 n I SC Output ShortCircuit Sourcing or Sinking V out = GND 7 m CMRR Common Mode Rejection Ratio V CM = 3 6 db I IB Input Bias Current. p PSRR Power Supply Rejection Ratio V S = 2.7 V 4 db I CC Supply Current =.8 V T = T Low to T High (Note ) 7.. = 3. V T = T Low to T High = 6. V T = T Low to T High V OH Output Voltage High =.8 V, I source =. m T = T Low to T High (Note ).2.22 = 3. V, I source = 3. m.2 T = T Low to T High.2 = 6. V, I source =. m.2 T = T Low to T High.2 V OL Output Voltage Low =.8 V, I sink =. m T = T Low to T High (Note )..2.2 V EE +. = 3. V, I sink = 3. m T = T Low to T High V EE +.2 = 6. V, I sink =. m V EE +.2 T = T Low to T High V EE +.2 V EE +.22 V EE +.2 V EE +.2 V EE +.2 V EE +.2 t PHL Propagation Delay, HightoLow 2 mv Overdrive, C L = pf 8 ns t PLH Propagation Delay, LowtoHigh 2 mv Overdrive, C L = pf 9 ns t FLL Output Fall Time = 6. V, C L = pf 3 ns t RISE Output Rise Time = 6. V, C L = pf 8. ns t PU Powerup Time 3 s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The limits over the extended temperature range are guaranteed by design only.. NCS22: T Low = 4 C, T High = + C; NCV22: T Low = 4 C, T High = +2 C V V 4

5 NCS222 ELECTRICL CHRCTERISTICS (For all values =.8 V to 6. V, V EE = V,, R pullup = k, unless otherwise noted.) (Note 6) Symbol Parameter Conditions Min Typ Max Unit V HYS Input Hysteresis mv V IO Input Offset Voltage =.8 V T = T Low to T High (Note 7) mv = 3. V 6. T = T Low to T High 8. = 6. V. T = T Low to T High 7. V CM Common Mode Voltage Range V EE to V I LEK Output Leakage Current = 6. V 3.3 n I SC Output ShortCircuit Sourcing or Sinking V out = GND 7 m CMRR Common Mode Rejection Ratio V CM = 3 6 db I IB Input Bias Current. p PSRR Power Supply Rejection Ratio V S = 2.7 V 4 db I CC Supply Current =.8 V T = T Low to T High (Note 7) 7.. = 3. V T = T Low to T High = 6. V T = T Low to T High V OL Output Voltage Low =.8 V, I sink =. m T = T Low to T High (Note 7) V EE +. = 3. V, I sink = 3. m T = T Low to T High V EE +.2 = 6. V, I sink =. m V EE +.2 T = T Low to T High V EE +.2 V EE +.22 V EE +.2 V EE +.2 V EE +.2 V EE +.2 t PHL Propagation Delay, HightoLow 2 mv Overdrive, C L = pf ns t PLH Propagation Delay, LowtoHigh 2 mv Overdrive, C L = pf 8 ns t FLL Output Fall Time = 6. V, C L = pf 6. ns t RISE Output Rise Time = 6. V, C L = pf 26 ns t PU Powerup Time 3 s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. The limits over the extended temperature range are guaranteed by design only. 7. NCS222: T Low = 4 C, T High = + C; NCV222: T Low = 4 C, T High = +2 C V

6 NCS22 ELECTRICL CHRCTERISTICS (For all values =.8 V to 6. V, V EE = V,, unless otherwise noted.) (Note 8) Symbol Parameter Conditions Min Typ Max Unit V HYS Input Hysteresis mv V IO Input Offset Voltage =.8 V T = T LOW to T HIGH 2 = 3. V 6. T = T LOW to T HIGH 8. = 6. V. T = T LOW to T HIGH 7. V CM Common Mode Voltage Range V EE to V I SC Output ShortCircuit Sourcing or V out = GND 6 m Sinking CMRR Common Mode Rejection Ratio V CM = 3 7 db I IB Input Bias Current. p PSRR Power Supply Rejection Ratio V S = 2.7 V 4 8 db I CC Supply Current =.8 V T = T LOW to T HIGH = 3. V T = T LOW to T HIGH 8. = 6. V 9. T = T LOW to T HIGH V OH Output Voltage High =.8 V, I source =. m T = T LOW to T HIGH CC.27 = 3. V, I source = 3. m T = T LOW to T HIGH CC.3 = 6. V, I source =. m T = T LOW to T HIGH CC V OL Output Voltage Low =.8 V, I sink =. m T = T LOW to T HIGH EE = 3. V, I sink = 3. m V EE +.2 T = T LOW to T HIGH = 6. V, I sink =. m V EE +.2 T = T LOW to T HIGH t PHL Propagation Delay, HightoLow 2 mv Overdrive, C L = pf, V EE +.2 V EE +.27 V EE +.3 V EE +.3 V EE +.3 V EE ns t PLH Propagation Delay, LowtoHigh = 2.8 V 7 ns t FLL Output Fall Time = 6. V, C L = pf (Note 9) 22 ns t RISE Output Rise Time = 6. V, C L = pf (Note 9) 2 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. The limits over the extended temperature range are guaranteed by design only. 9. Input signal: khz, squarewave signal with ns edge rate..ncs22: T LOW = 4 C, T HIGH = + C; NCV22: T LOW = 4 C, T HIGH = +2 C. mv V V 6

7 NCS222 ELECTRICL CHRCTERISTICS (For all values =.8 V to 6. V, V EE = V,, R pullup = k, unless otherwise noted.) (Note ) Symbol Parameter Conditions Min Typ Max Unit V HYS Input Hysteresis mv V IO Input Offset Voltage =.8 V T = 4 C to C = 3. V T = 4 C to C = 6. V T = 4 C to C V CM Common Mode Voltage Range V EE to V I SC Output ShortCircuit Sourcing or V out = GND 6 m Sinking CMRR Common Mode Rejection Ratio V CM = 3 8 db I IB Input Bias Current. p PSRR Power Supply Rejection Ratio V S = 2.7 V 4 8 db I CC Supply Current =.8 V T = 4 C to C 7. 7 = 3. V T = 4 C to C = 6. V T = 4 C to C V OL Output Voltage Low =.8 V, I sink =. m T = 4 C to C = 3. V, I sink = 3. m T = 4 C to C = 6. V, I sink =. m T = 4 C to C t PHL Propagation Delay High to Low 2 mv Overdrive, C L = pf, = 2.8 V mv Overdrive, C L = pf, = 2.8 V mv Overdrive, C L = pf, = 2.8 V t PLH Propagation Delay Low to High 2 mv Overdrive, C L = pf, = 2.8 V mv Overdrive, C L = pf, = 2.8 V mv Overdrive, C L = pf, = 2.8 V t FLL Output Fall Time = 6. V, C L = pf (Note 2) t RISE Output Rise Time = 6. V, C L = pf (Note 2) V EE +.4 V EE +.8 V EE V EE +.2 V EE +.27 V EE +.3 V EE +.3 V EE +.3 V EE +.3 mv 8 ns 3 22 ns ns 23 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. The limits over the extended temperature range are guaranteed by design only. 2.Input signal: khz, squarewave signal with ns edge rate. V 7

8 I CC, SUPPLY CURRENT ( ) =. V I CC, SUPPLY CURRENT ( ) =. V = 2.7 V T, MBIENT TEMPERTURE ( C) Figure. NCS22 Series Supply Current versus Temperature FREQUENCY (khz) Figure 2. NCS22 Series Supply Current versus Output Transition Frequency I CC, SUPPLY CURRENT ( ) T = 8 C T = 4 C V OH, OUTPUT VOLTGE HIGH STTE (mv). =. V , SUPPLY VOLTGE (V) Figure 3. NCS22 Series Supply Current versus Supply Voltage.... I source, OUTPUT SOURCE CURRENT (m) Figure 4. NCS22 Output Voltage High State versus Output Source Current V OL, OUTPUT VOLTGE LOW STTE (mv). =. V.... I sink, OUTPUT SINK CURRENT, (m) Figure. NCS22 Series Output Voltage Low State versus Output Sink Current V OL, OUTPUT VOLTGE LOW STTE (mv) =. V I LOD = 4. m T, MBIENT TEMPERTURE ( C) Figure 6. NCS22 Series Output Voltage Low State versus Temperature 8

9 V OH, OUTPUT VOLTGE HIGH STTE (mv) T, MBIENT TEMPERTURE ( C) =. V I LOD = 4. m PROPGTION DELY ( s) t PLH t PHL.2 =. V Input Overdrive = mv 2 2 T, MBIENT TEMPERTURE ( C) 7 Figure 7. NCS22 Series Output Voltage High State versus Temperature Figure 8. NCS22 Series Propagation Delay versus Temperature OUTPUT RESPONSE TIME (ns) Input Overdrive = mv t LH t HL, SUPPLY VOLTGE (V) Figure 9. NCS22 Series Output Response Time versus Supply Voltage PROPGTION DELY ( s) t PLH t PHL = 2.7 V 2 INPUT OVERDRIVE (mv) Figure. NCS22 Series Propagation Delay versus Input Overdrive PROPGTION DELY ( s) t PLH t PHL 2 INPUT OVERDRIVE (mv) =. V 2 V/Div Output Input Overdrive = mv s/div Figure. NCS22 Series Propagation Delay versus Input Overdrive Figure 2. NCS22 Series Powerup Delay 9

10 V CM, INPUT COMMON MODE VOLTGE RNGE (V) V S, SUPPLY VOLTGE (V). 6. Figure 3. NCS22 Series Input Common Mode Voltage Range versus Supply Voltage I LEK, OUTPUT LEKGE CURRENT (n) T = 4 C T = 8 C V OUT, OUTPUT VOLTGE (V) Figure 4. NCS222 Output Leakage Current versus Output Voltage 4 INPUT BIS CURRENT (p) TEMPERTURE ( C) Figure. Input Bias Current versus Temperature

11 OPERTING DESCRIPTION The NCS22 series is an industry first subone volt, low power comparator family. This series is designed for railtorail input and output performance. These devices consume only of supply current while achieving a typical propagation delay of. s at a 2 mv input overdrive. Figures and show propagation delay with various input overdrives. This comparator family is guaranteed to operate at a low voltage of.8 V up to 6. V. This is accomplished by the use of a modified analog CMOS process that implements depletion MOSFET devices. The commonmode input voltage range extends. V beyond the upper and lower rail without phase inversion or other adverse effects. This series is available in the SOT23 package. dditionally, the NCS22 device is available in the tiny DFN 2x2.2 package and the SC7 package. NCS22 is available in UDFN package. Output Stage The NCS22 has a complementary P and N Channel output stage that has capability of driving a railtorail output swing with a load ranging up to. m. It is designed such that shootthrough current is minimized while switching. This feature eliminates the need for bypass capacitors under most circumstances. The NCS222 has an open drain Nchannel output stage that can be pulled up to 6. V (max) with an external resistor. This facilitates mixed voltage system applications. IN (+) IN (+) Output Output IN () IN () V EE Figure 6. NCS22/NCS22 Complementary PushPull Output V EE Figure 7. NCS222/NCS222 Open Drain Output Configuration R x C x IN () NCS 22 IN (+) OUT V O R 2 R The oscillation frequency can be programmed as follows: f T 2.2 RxCx Figure 8. Schmitt Trigger Oscillator

12 M R t pf R 2 M IN () NCS 22 IN (+) OUT C V O t t R 3 The resistor divider R and R 2 can be used to set the magnitude of the input pulse. The pulse width is set by adjusting C and R 3. Figure 9. OneShot Multivibrator + V k +3 V R pullup IN () NCS k +3 V Logic Output 222 OUT IN (+) + V Logic Input This circuit converts V logic to 3 V logic. Using the NCS222/ allows for full V logic swing without creating overvoltage on the 3 V logic input. Figure 2. Logic Level Translator mv IN () NCS 22 IN (+) OUT Figure 2. ZeroCrossing Detector 2

13 ORDERING INFORMTION Device Pinout Style Output Type Package Shipping NCS22MUTG N/ Complementary PushPull UDFN (PbFree) NCV22MUTBG* N/ Complementary PushPull UDFN (PbFree) NCS22SNTG Complementary PushPull SOT23 (TSOP) (PbFree) NCV22SNTG* Complementary PushPull SOT23 (TSOP) (PbFree) NCS22SN2TG 2 Complementary PushPull SOT23 (TSOP) (PbFree) NCV22SN2TG* 2 Complementary PushPull SOT23 (TSOP) (PbFree) NCS22SQ2T2G 2 Complementary PushPull SC7 (PbFree) NCV22SQ2T2G* 2 Complementary PushPull SC7 (PbFree) NCS22SQLTG N/ Complementary PushPull DFN, 2x2.2 (PbFree) NCS222SNTG Open Drain SOT23 (TSOP) (PbFree) NCS222SN2TG 2 Open Drain SOT23 (TSOP) (PbFree) NCV222SN2TG* 2 Open Drain SOT23 (TSOP) (PbFree) NCS222SQT2G Open Drain SC7 (PbFree) NCS222SQ2T2G 2 Open Drain SC7 (PbFree) NCS222MUTBG N/ Open Drain UDFN (PbFree) This device contains 93 active transistors. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; ECQ Qualified and PPP Capable. 3

14 MRKING DIGRMS SOT23 (TSOP) SN SUFFIX CSE 483 Cx YW x = I for NCS22SNT J for NCS22SN2T M for NCS222SNT N for NCS222SN2T = ssembly Location Y = Year W = Work Week = PbFree Package (Note: Microdot may be in either location) SC7 SQ SUFFIX CSE 49 CBx M CBx = Specific Device Code x = for NCS22SQ2T2 D for NCS222SQT2G E for NCS222SQ2T2G M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation, position, and underbar may vary depending upon manufacturing location. CB M DFN6 2x2.2 SQL SUFFIX CSE 488 CB M = Specific Device Code = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code overbar and underbar may vary depending upon manufacturing location. x M UDFN6.2x. MU SUFFIX CSE 7 x M (Top View) S for Specific Device Code V for NCS222 (V with 8 Rotation) = Date Code = PbFree Package 4

15 PCKGE DIMENSIONS SOT23 / TSOP / SC9 SN SUFFIX CSE 4832 ISSUE M 2X 2X.2 NOTE T. B. T B H G TOP VIEW SIDE VIEW C D X S.2 C SETING PLNE C B M K DETIL Z DETIL Z J END VIEW NOTES:. DIMENSIONING ND TOLERNCING PER SME Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. MXIMUM LED THICKNESS INCLUDES LED FINISH THICKNESS. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL. 4. DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED. PER SIDE. DIMENSION.. OPTIONL CONSTRUCTION: N DDITIONL TRIMMED LED IS LLOWED IN THIS LOCTION. TRIMMED LED NOT TO EXTEND MORE THN.2 FROM BODY. MILLIMETERS DIM MIN MX B C D.2. G.9 BSC H.. J..26 K.2.6 M S SOLDERING FOOTPRINT* SCLE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

16 PCKGE DIMENSIONS DFN6, 2x2.2 SQL SUFFIX CSE 4883 ISSUE G 6X 2X. C. C PIN ONE REFERENCE. C 2X. C. C.8 C B NOTE 3 b D ÍÍÍ ÍÍÍ ÍÍÍ TOP VIEW SIDE VIEW DETIL B 3 3 e B E DETIL D2 C SETING PLNE.4.6 NOTES:. DIMENSIONING ND TOLERNCING PER SME Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN.2 ND.3mm FROM TERMINL. 4. COPLNRITY PPLIES TO THE EXPOSED PD S WELL S THE TERMINLS.. TERMINL b MY HVE MOLD COMPOUND MTERIL LONG SIDE EDGE. 6. DETILS ND B SHOW OPTIONL VIEWS FOR END OF TERMINL LED T EDGE OF PCKGE ND SIDE EDGE OF PCKGE. MILLIMETERS DIM MIN NOM MX REF b b D 2. BSC D E 2.2 BSC e.6 BSC L L... SOLDERING FOOTPRINT* L 6X L DETIL Bottom View (Optional) 6 EDGE OF PCKGE 4 BOTTOM VIEW MOLD CMPD b X. C. C ÉÉ DETIL B Side View (Optional) B NOTE 3 EXPOSED Cu SCLE : *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6

17 PCKGE DIMENSIONS SC88 (SC7/SOT33) SQ SUFFIX CSE 492 ISSUE L S G 4 B 2 3 D PL.2 (.8) M B M N NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y4.M, CONTROLLING DIMENSION: INCH OBSOLETE. NEW STNDRD DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. INCHES MILLIMETERS DIM MIN MX MIN MX B C D G.26 BSC.6 BSC H J K N.8 REF.2 REF S C J H K SOLDERING FOOTPRINT* SCLE 2: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

18 PCKGE DIMENSIONS UDFN6,.2x.,.4P CSE 7 ISSUE D 2X X PIN ONE REFERENCE. C 2X. C.8 C. C L2 D ÉÉ ÉÉ TOP VIEW SIDE VIEW 3 B E (3) X L C L EXPOSED Cu SETING PLNE DETIL Bottom View (Optional) DETIL B Side View (Optional) EDGE OF PCKGE MOLD CMPD 3 NOTES:. DIMENSIONING ND TOLERNCING PER SME Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN.2 ND.3 mm FROM TERMINL. 4. COPLNRITY PPLIES TO THE EXPOSED PD S WELL S THE TERMINLS. MILLIMETERS DIM MIN MX REF b..2 D.2 BSC E. BSC e.4 BSC L.3.4 L.. L2.4. MOUNTING FOOTPRINT* 6X.42 6X.22 6X b. C B. C NOTE e BOTTOM VIEW.4 PITCH.7 DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FD Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 92 E. 32nd Pkwy, urora, Colorado 8 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCS22/D

NCS2200, NCS2200A, NCV2200, NCS2202A. Low Voltage Comparators

NCS2200, NCS2200A, NCV2200, NCS2202A. Low Voltage Comparators NCS22, NCS22A, NCV22, NCS222A Low Voltage Comparators The NCS22 Series is an industry first subone volt, low power comparator family. These devices consume only A of supply current. They are guaranteed

More information

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single

More information

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS

MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling

More information

MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.

More information

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage

More information

NCS2250, NCV2250, NCS2252, NCV2252. Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail

NCS2250, NCV2250, NCS2252, NCV2252. Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail NCS22, NCV22, NCS222, NCV222 Comparator, High Speed, ns, Low Voltage, Rail-to-Rail The NCS22 and NCS222 low voltage comparators feature fast response time and rail to rail input and output. The extended

More information

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction

More information

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output

More information

NLX2G66. Dual Bilateral Analog Switch / Digital Multiplexer

NLX2G66. Dual Bilateral Analog Switch / Digital Multiplexer Dual Bilateral nalog Switch / Digital Multiplexer The NLX2G66 is a dual single pole, single throw (SPST) analog switch / digital multiplexer. This single supply voltage IC is designed with a sub micron

More information

MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where

More information

MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS

MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial

More information

MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS

MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;

More information

NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK

NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS

MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface

More information

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features

More information

MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.

MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1. MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art

More information

NCS20061, NCV20061, NCS20062, NCV20062, NCS20064, NCV Operational Amplifier, Rail-to-Rail Input and Output, 3 MHz

NCS20061, NCV20061, NCS20062, NCV20062, NCS20064, NCV Operational Amplifier, Rail-to-Rail Input and Output, 3 MHz NCS, NCV, NCS, NCV, NCS, NCV Operational mplifier, Rail-to-Rail Input and Output, MHz The NCS series operational amplifiers provide rail to rail input and output operation, MHz bandwidth, and are available

More information

MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial

More information

MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface

More information

MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package

MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal

More information

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching

More information

EFC2J004NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 mω, 14 A, Dual N-Channel

EFC2J004NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 mω, 14 A, Dual N-Channel EFCJNUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 1 V,.1 mω, 1, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power

More information

MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS

MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching

More information

MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS

MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information

NCS20081/2/4, NCV20081/2/ MHz, 42 A Low Power Operational Amplifier

NCS20081/2/4, NCV20081/2/ MHz, 42 A Low Power Operational Amplifier NCS8//, NCV8//. MHz, Low Power Operational mplifier The NCS8// is a family of single, dual and quad Operational mplifiers (Op mps) with. MHz of Gain Bandwidth Product (GBWP) and draws only of Quiescent

More information

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv

More information

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used

More information

MC34064, MC33064, NCV33064

MC34064, MC33064, NCV33064 MC3464, MC3364, NCV3364 Undervoltage Sensing Circuit The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor based systems. It offers the designer

More information

J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS

J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru

More information

MC74VHC1GT66. SPST (NO) Normally Open Analog Switch

MC74VHC1GT66. SPST (NO) Normally Open Analog Switch MC7VHCGT66 SPST (NO) Normally Open nalog Switch The MC7VHCGT66 is a Single Pole Single Throw (SPST) analog switch. It achieves high speed propagation delays and low ON resistances while maintaining low

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

NCS21911, NCV21911, NCS21912, NCV21912, NCS21914, NCV Product Preview Precision Operational Amplifier, 2 MHz Bandwidth, Low Noise

NCS21911, NCV21911, NCS21912, NCV21912, NCS21914, NCV Product Preview Precision Operational Amplifier, 2 MHz Bandwidth, Low Noise NCS29, NCV29, NCS292, NCV292, NCS294, NCV294 Product Preview Precision Operational mplifier, 2 MHz Bandwidth, Low Noise The NCS29x family of high precision op amps feature low input offset voltage and

More information

MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.

MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1. MBR14SF, NRVB14SF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,

More information

MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS

MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction

More information

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change

More information

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Digital Transistors (BRT) R = 47 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial

More information

MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM13LT1G, NRVBM13LT1G, MBRM13LT3G, NRVBM13LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial

More information

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27A, Dual N-Channel

EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27A, Dual N-Channel Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches

More information

LM339S, LM2901S. Single Supply Quad Comparators

LM339S, LM2901S. Single Supply Quad Comparators LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features

More information

LM321. Single Channel Operational Amplifier

LM321. Single Channel Operational Amplifier Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon

BC846ALT1G Series. General Purpose Transistors. NPN Silicon BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other

More information

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88 NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

NCV Amp H-Bridge Driver

NCV Amp H-Bridge Driver V770 2.0 mp HBridge Driver This automotive grade HBridge driver provides a flexible means for controlling loads requiring bidirectional drive currents. Bridge outputs are protected from overcurrent at

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89 NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD

More information

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices

More information

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75 Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N

More information

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input

NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input General Description The NC7S14 is a single high performance CMOS Inverter with Schmitt Trigger input. The circuit design provides hysteresis between

More information

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

More information

TCA0372, TCA0372B, NCV0372B. 1.0 A Output Current, Dual Power Operational Amplifiers

TCA0372, TCA0372B, NCV0372B. 1.0 A Output Current, Dual Power Operational Amplifiers TC0372, TC0372B, V0372B.0 Output Current, Dual Power Operational mplifiers The TC0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723 NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

More information

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD3 (NPN), MJD3 (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

NC7S00 TinyLogic HS 2-Input NAND Gate

NC7S00 TinyLogic HS 2-Input NAND Gate NC7S00 TinyLogic HS 2-Input NAND Gate General Description The NC7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

MARKING DIAGRAMS MAXIMUM RATINGS

MARKING DIAGRAMS MAXIMUM RATINGS Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light

More information

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed

More information

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23 NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint

More information

NCP436, NCP437. 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path

NCP436, NCP437. 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path 3 Ultra-Small Controlled Load Switch with uto-discharge Path The NCP436 and NCP437 are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.

More information

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

More information

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor

More information

CAT ma CMOS LDO Regulator

CAT ma CMOS LDO Regulator 5 m CMOS LDO Regulator Description The CT629 is a 5 m CMOS low dropout regulator that provides fast response time during load current and line voltage changes. The quick-start feature allows the use of

More information

CS V Dual Micropower Regulator with ENABLE and RESET

CS V Dual Micropower Regulator with ENABLE and RESET 3.3 V Dual Micropower Regulator with ENBLE and The CS8363 is a precision Micropower dual voltage regulator with ENBLE and. The 3.3 V standby output is accurate within 2%, +2.4% while supplying loads of

More information

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator 25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage

More information

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

More information

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

More information

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving

More information

NCP553, NCV ma CMOS Low Iq NOCAP Voltage Regulator

NCP553, NCV ma CMOS Low Iq NOCAP Voltage Regulator NCP55, NCV55 8 ma CMOS Low Iq NOCAP Voltage Regulator This series of fixed output NOCAP linear regulators are designed for handheld communication equipment and portable battery powered applications which

More information

74VHC14 Hex Schmitt Inverter

74VHC14 Hex Schmitt Inverter 74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection

More information

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space

More information

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component

More information

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to

More information

UMC2NT1, UMC3NT1, UMC5NT1

UMC2NT1, UMC3NT1, UMC5NT1 UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor

More information

NL27WZ07. Dual Buffer with Open Drain Outputs

NL27WZ07. Dual Buffer with Open Drain Outputs Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including

More information

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

More information

NTLUF4189NZ Power MOSFET and Schottky Diode

NTLUF4189NZ Power MOSFET and Schottky Diode NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board

More information

MM74HC14 Hex Inverting Schmitt Trigger

MM74HC14 Hex Inverting Schmitt Trigger MM74HC14 Hex Inverting Schmitt Trigger Features Typical propagation delay: 13ns Wide power supply range: 2V 6V Low quiescent current: 20µA maximum (74HC Series) Low input current: 1µA maximum Fanout of

More information

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC

More information

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes , Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,

More information

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23 NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive

More information

T4302. Power MOSFET. 68 A, 30 V, N Channel DPAK/IPAK

T4302. Power MOSFET. 68 A, 30 V, N Channel DPAK/IPAK NTD Power MOSFET 68, V, NChannel DPK/IPK Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified I

More information

NCS2302. Headset Detection Interface with Send/End Detect

NCS2302. Headset Detection Interface with Send/End Detect NCS232 Headset Detection Interface with Send/End Detect The NCS232 is a compact and cost effective headset detection interface IC. It integrates several circuit blocks to detect the presence of a stereo

More information

NUD3124, SZNUD3124. Automotive Inductive Load Driver

NUD3124, SZNUD3124. Automotive Inductive Load Driver Automotive Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling

More information

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

More information

NC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear

NC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear NC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear General Description The NC7SZ175 is a single positive edge-triggered D-type CMOS Flip-Flop with Asynchronous Clear from ON Semiconductor

More information

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information