REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device types 02 and 03. Make change to the NPN and PNP

Transcription

1 REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Add device types 02 and 03. Make change to the NPN and PNP R. HEBER characteristics h FE tests as specified under Table I. Delete NPN and PNP characteristics I EO and I BO tests as specified under Table I. - ro B Add case outline X. Make changes to 1.2.4, 1.3, and Figure 1. - ro R. HEBER Add device types 04, 05, and 06. Delete figure 2. Remove radiation exposure circuits, paragraph Dose rate burnout, and references to device class M requirements. - ro SAFFLE REV REV REV STATUS REV OF S PMI N/A MIROIRUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENIES OF THE DEPARTMENT OF DEFENSE PREPARED BY RIK OFFIER HEKED BY RAJESH PITHADIA APPROVED BY ROBERT M. HEBER DRAWING APPROVAL DATE OLUMBUS, OHIO MIROIRUIT, LINEAR, RADIATION HARDENED, ULTRA HIGH FREQUENY, NPN-PNP OMBINATION TRANSISTOR ARRAY, MONOLITHI SILION AMS N/A A AGE ODE OF 18 DS FORM E358-14

2 1. SOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator \ / (see 1.2.3) \/ Drawing number ase outline (see 1.2.4) Lead finish (see 1.2.5) RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-rha device Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number ircuit function 01 ISL73096RH Radiation hardened, dielectrically isolated, ultra high frequency all NPN PNP combination transistor array 02 ISL73127RH Radiation hardened, dielectrically isolated, ultra high frequency all NPN transistor array 03 ISL73128RH Radiation hardened, dielectrically isolated, ultra high frequency all PNP transistor array 04 ISL73096EH Radiation hardened, dielectrically isolated, ultra high frequency all NPN PNP combination transistor array 05 ISL73127EH Radiation hardened, dielectrically isolated, ultra high frequency all NPN transistor array 06 ISL73128EH Radiation hardened, dielectrically isolated, ultra high frequency all PNP transistor array Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Q or V Device requirements documentation ertification and qualification to MIL-PRF DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

3 1.2.4 ase outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E DIP2-T16 16 Dual-in-line X DFP Flat pack Lead finish. The lead finish is as specified in MIL-PRF for device classes Q and V. 1.3 Absolute maximum ratings. 1/ ollector to emitter voltage (open base) : Device types 01, 02, 04, 05 (NPN characteristics) V Device types 01, 03, 04, 06 (PNP characteristics) V ollector to base voltage (open emitter) : Device types 01, 02, 04, 05 (NPN characteristics) V Device types 01, 03, 04, 06 (PNP characteristics) V Emitter to base voltage (reverse bias) : Device types 01, 02, 04, 05 (NPN characteristics) V Device types 01, 03, 04, 06 (PNP characteristics) V ollector current at 100% duty cycle, ma Maximum power dissipation (P D ) : ase outline E mw ase outline X : At W At W Junction temperature (T J ) Storage temperature range T A +150 Lead temperature (soldering, 10 seconds) Thermal resistance, junction-to-case ( J ) : ase outline E... See MIL-STD-1835 ase outline X /W Thermal resistance, junction-to-ambient ( JA ) : ase outline E /W ase outline X /W 1.4 Recommended operating conditions. Ambient operating temperature range (T A ) T A Radiation features. Maximum total dose available (dose rate = rads(si)/s): Device types 01, 02, and krads(si) 2/ Device type 04, 05, and krads(si) 3/ Maximum total dose available (dose rate 0.01 rad(si)/s): Device types 04, 05, and krads(si) 3/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Device types 01, 02 and 03 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Device types 01, 02, and 03 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(si). 3/ Device types 04, 05, and 06 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(si), and condition D to a maximum total dose of 50 krads(si). DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

4 2. APPLIABLE DOUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPEIFIATION MIL-PRF Integrated ircuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE S MIL-STD Test Method Standard Microcircuits. MIL-STD Interface Standard Electronic omponent ase Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK MIL-HDBK List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (opies of these documents are available online at or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA ) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF and herein for device classes Q and V ase outlines. The case outlines shall be in accordance with herein Terminal connections. The terminal connections shall be as specified on figure Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF ertification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

5 TABLE I. Electrical performance characteristics. Test Symbol onditions -55 T A +125 unless otherwise specified Group A subgroups Device type Limits Unit NPN characteristics Min Max ollector to base breakdown voltage ollector to emitter breakdown voltage ollector to emitter breakdown voltage Emitter to base breakdown voltage ollector to emitter saturation voltage V (BR)BO I = 100 A, I E = 0 1,2,3 01, 02, 12 V M,D,P,L,R,F 1/ 2/ 1 04, V (BR)EO I = 100 A, I B = 0 1,2,3 01, 02, 8 V V (BR)ES M,D,P,L,R,F 1/ 2/ 1 04, 05 8 I = 100 A, base shorted to emitter 1,2,3 01, 02, 04, 05 M,D,P,L,R,F 1/ 2/ V V (BR)EBO I E = 10 A, I = 0 1,2,3 01, 02, 5.5 V M,D,P,L,R,F 1/ 2/ 1 04, V E(SAT) I = 10 ma, I B = 1 ma 1,2,3 01, 02, 0.5 V M,D,P,L,R,F 1/ 2/ 1 04, Base to emitter voltage V BE I = 10 ma 1 01, 02, 0.95 V 2,3 04, M,D,P,L,R,F 1/ 2/ D forward current transfer ratio h FE I = 10 ma, V E = 2 V 1 01, 02, 80 2,3 04, M,D,P,L,R,F 1/ 2/ 1 40 Early voltage V A I = 1 ma, V E = 3.5 V 1,2,3 01, 02, 20 V M,D,P,L,R,F 1/ 2/ 1 04, See footnotes at end of table. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

6 TABLE I. Electrical performance characteristics ontinued. Test Symbol onditions -55 T A +125 unless otherwise specified Group A subgroups Device type Limits Unit Min Max PNP characteristics ollector to base breakdown voltage ollector to emitter breakdown voltage ollector to emitter breakdown voltage Emitter to base breakdown voltage ollector to emitter saturation voltage V (BR)BO I = -100 A, I E = 0 1,2,3 01, 03, 10 V M,D,P,L,R,F 1/ 2/ 1 04, V (BR)EO I = -100 A, I B = 0 1,2,3 01, 03, 8 V V (BR)ES M,D,P,L,R,F 1/ 2/ 1 04, 06 8 I = -100 A, base shorted to emitter 1,2,3 01, 03, 04, 06 M,D,P,L,R,F 1/ 2/ V V (BR)EBO I E = -10 A, I = 0 1,2,3 01, 03, 4.5 V M,D,P,L,R,F 1/ 2/ 1 04, V E(SAT) I = -10 ma, I B = -1 ma 1,2,3 01, 03, 0.5 V M,D,P,L,R,F 1/ 2/ 1 04, Base to emitter voltage V BE I = -10 ma 1 01, 03, 0.95 V 2,3 04, M,D,P,L,R,F 1/ 2/ D forward current transfer ratio h FE I = -10 ma, V E = -2 V 1 01, 03, 40 2,3 04, M,D,P,L,R,F 1/ 2/ 1 20 Early voltage V A I = -1 ma, V E = -3.5 V 1,2,3 01, 03, 10 V M,D,P,L,R,F 1/ 2/ 1 04, / RHA device types 01, 02, and 03 supplied to this drawing will meet all levels M, D, P, L, R and F of irradiation. However, device types 01,02, and 03 are only tested at the F level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). RHA device types 04, 05, and 06 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A and levels M, D, P, and L for condition D. However, device types 04, 05, and 06 are only tested at the F level in accordance with MIL-STD-883, method 1019, condition A, and tested at the L level in condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, T A = / Device types 01, 02 and 03 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

7 Device types 01 and 04 02, 03, 05, and 06 ase outlines Terminal number E and X Terminal symbol 1 Q1 base Q1 collector 2 Q1 emitter Q2 collector 3 Q1 collector Q2 emitter 4 Q2 emitter Q2 base 5 Q2 base N 6 Q2 collector Q3 collector 7 Q3 emitter Q3 emitter 8 Q3 base Q3 base 9 Q3 collector Q4 base 10 Q4 emitter Q4 emitter 11 Q4 base Q4 collector 12 Q4 collector Q5 collector 13 Q5 emitter Q5 emitter 14 Q5 base Q5 base 15 Q5 collector Q1 base 16 N Q1 emitter N = No connection FIGURE 1. Terminal connections. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

8 3.6 ertificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML listed manufacturer in order to supply to the requirements of this drawing (see herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF and herein. 3.7 ertificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFIATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF Inspections to be performed shall be those specified in MIL-PRF and herein for groups A, B,, D, and E inspections (see through 4.4.4). 4.4 onformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF including groups A, B,, D, and E inspections, and as specified herein Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted Group inspection. The group inspection end-point electrical parameters shall be as specified in table IIA herein Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

9 TABLE IIA. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q 1 1 Device class V 1,2,3 1/ 1,2,3 1/ 2/ 1,2,3 1,2, / / PDA applies to subgroup 1. 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see table I). TABLE IIB. Burn-in and operating life test delta parameters. T A = +25. Parameters Symbol Device types Delta limit ollector to emitter saturation voltage V E(SAT) 04, 05, mv Base to emitter voltage V BE 150 mv 1/ Deltas are performed at room temperature Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at T A = +25 5, after exposure, to the subgroups specified in table IIA herein. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

10 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A and as specified herein for device types 01, 02, 03, 04, 05, and 06. In addition, for device types 04, 05, and 06 a low dose rate test shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5 krads(si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 5. PAKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF for device classes Q and V. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.2 onfiguration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering hange Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FS 5962) should contact DLA Land and Maritime-VA, telephone (614) omments. omments on this drawing should be directed to DLA Land and Maritime-VA, olumbus, Ohio , or telephone (614) Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF and MIL-HDBK Sources of supply Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in MIL-HDBK-103 and QML The vendors listed in MIL-HDBK-103 and QML have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

11 APPENDIX A APPENDIX A FORMS A PART OF SMD A.1 SOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 F V 9 X Federal stock class designator RHA designator (see A.1.2.1) Device type (see A.1.2.2) Device class designator \ / (see A.1.2.3) \/ Drawing number Die code Die details (see A.1.2.4) A RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF specified RHA levels. A dash (-) indicates a non-rha die. A Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number ircuit function A Device class designator. 01 ISL73096RH Radiation hardened dielectrically isolated ultra high frequency all NPN-PNP combination transistor array 02 ISL73127RH Radiation hardened, dielectrically isolated, ultra high frequency all NPN transistor array 03 ISL73128RH Radiation hardened, dielectrically isolated, ultra high frequency all PNP transistor array 04 ISL73096EH Radiation hardened, dielectrically isolated, ultra high frequency all NPN PNP combination transistor array 05 ISL73127EH Radiation hardened, dielectrically isolated, ultra high frequency all NPN transistor array 06 ISL73128EH Radiation hardened, dielectrically isolated, ultra high frequency all PNP transistor array Device class Q or V Device requirements documentation ertification and qualification to the die requirements of MIL-PRF DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

12 APPENDIX A APPENDIX A FORMS A PART OF SMD A Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A Die physical dimensions. Die type Figure number 01, 02, 03, 04, 05, 06 A-1 A Die bonding pad locations and electrical functions. Die type Figure number 01, 02, 03, 04, 05, 06 A-1 A Interface materials. Die type Figure number 01, 02, 03, 04, 05, 06 A-1 A Assembly related information. Die type Figure number 01, 02, 03, 04, 05, 06 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. A.2 APPLIABLE DOUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPEIFIATION MIL-PRF Integrated ircuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE MIL-STD Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK List of Standard Microcircuit Drawings. MIL-HDBK Standard Microcircuit Drawings. (opies of these documents are available online at or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA ) DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

13 APPENDIX A APPENDIX A FORMS A PART OF SMD A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF and as specified herein or as modified in the device manufacturer s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF and herein and the manufacturer s QM plan for device classes Q and V. A Die physical dimensions. The die physical dimensions shall be as specified in A and on figure A-1. A Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A and on figure A-1. A Interface materials. The interface materials for the die shall be as specified in A and on figure A-1. A Assembly related information. The assembly related information shall be as specified in A and on figure A-1. A Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer s identification and the PIN listed in A.1.2 herein. The certification mark shall be a QML or Q as required by MIL-PRF A.3.6 ertification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer s product meets, for device classes Q and V, the requirements of MIL-PRF and the requirements herein. A.3.7 ertificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF shall be provided with each lot of microcircuit die delivered to this drawing. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

14 APPENDIX A APPENDIX A FORMS A PART OF SMD A.4 VERIFIATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF or as modified in the device manufacturer s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method A.4.3 onformance inspection. A Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4, , herein. A.5 DIE ARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF or MIL-PRF for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 omments. omments on this appendix should be directed to DLA Land and Maritime -VA, olumbus, Ohio, or telephone (614) A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF and MIL-HDBK A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML The vendors listed within MIL-HDBK-103 and QML have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

15 APPENDIX A APPENDIX A FORMS A PART OF SMD Device types 01 and 04 FIGURE A-1. Die bonding pad locations and electrical functions. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

16 APPENDIX A APPENDIX A FORMS A PART OF SMD Device types 02 and 05 FIGURE A-1. Die bonding pad locations and electrical functions. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

17 APPENDIX A APPENDIX A FORMS A PART OF SMD Device types 03 and 06 FIGURE A-1. Die bonding pad locations and electrical functions. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

18 APPENDIX A APPENDIX A FORMS A PART OF SMD Die bonding pad locations and electrical functions Die physical dimensions. Die size: 1340 microns x 1320 microns Die thickness: 14 1 mils Interface materials. Top metallization: Alu 16.0 kå 0.8 kå Backside metallization: None Glassivation. Type: Nitride Thickness: 4.0 kå 0.5 kå Substrate: Dielectrically isolated (DI), Bipolar Assembly related information. Substrate potential: Unbiased Special assembly instructions: None FIGURE A-1. Die bonding pad locations and electrical functions. DS FORM 2234 MIROIRUIT DRAWING OLUMBUS, OHIO

19 MIROIRUIT DRAWING BULLETIN DATE: Approved sources of supply for SMD are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML during the next revision. MIL-HDBK-103 and QML will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML DLA Land and Maritime maintains an online database of all current sources of supply at Standard microcircuit drawing PIN 1/ Vendor AGE number Vendor similar PIN 2/ 5962F VEA 3/ ISL73096RHVD 5962F VX ISL73096RHVF 5962F V9A ISL73096RHVX 5962F VEA 3/ ISL73127RHVD 5962F VX ISL73127RHVF 5962F V9A ISL73127RHVX 5962F VEA 3/ ISL73128RHVD 5962F VX ISL73128RHVF 5962F V9A ISL73128RHVX 5962F VX ISL73096EHVF 5962F V9A ISL73096EHVX 5962F VX ISL73127EHVF 5962F V9A ISL73127EHVX 5962F VX ISL73128EHVF 5962F V9A ISL73128EHVX 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ aution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor AGE number Vendor name and address Intersil orporation 1001 Murphy Ranch Road Milpitas, A The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.