Silicon Carbide Technology Overview
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1 Silicon Carbide Technology Overview MARCH richardsonrfpd.com
2 Your Source for Silicon Carbide Power Products Deep Technical Expertise Silicon carbide (SiC) offers significant advantages in high-power, highvoltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material. Advantages of designing in SiC include: > SiC diodes have near-zero reverse recovery current > Improved efficiencies and decreased thermal dissipation > Smaller power electronics and system size > Higher power density > Higher operating frequency > Simple parallel operation > Reduced overall system cost SiC MOSFETs produce much lower switching losses compared to Si IGBTs, as shown in the yellow-highlighted areas below: SiC Schottky diodes have near-zero reverse recovery losses compared to Si FREDs and are stable over temperature: Turn Off Turn On Eon = 10.0 mj Eoff = 11.2 mj Eon = 3.3 mj Eoff = 3.2 mj Si IGBT SiC MOS SiC MOSFETs have a much more stable R DS(on) over temperature than Si MOSFETs. SiC MOSFETs include a robust body diode with much lower reverse recovery charge (Q rr ) and reverse recovery time (T rr ) than Si MOSFETs.
3 Use SiC Performance Advantages to Reduce Total Cost Design in SiC products to substantially reduce switching and conduction losses, resulting in lower heat sink cost: Lower losses lead to higher efficiencies and lower energy consumption, resulting in lifelong savings: Need to transfer 10kW $ $ $ $ $ $ $ $ $50.00 $ China USA Brazil UK Japan Spain Germany Denmark Savings/YR Pay Back Period (Months) $200 cost differential between Si and SiC Module. Motor operated for 16 Hrs daily every day. Assuming 0.8% improvement in operational efficiency for the SiC motor drive. Use SiC products to restructure, not increase overall system cost. IGBT + Si Diode SiC MOSFET + SiC Diode SiC MOSFET + SiC Diode Switching Frequency 20kHz 60kHz 100kHz Inductors $62 $35 $20 Capacitors $65 $65 $65 Cooling $45 $30 $38 Power Semiconductors $10 $40 $40 Total $182 $170 $163 10kW interleaved boost converter Output Power: 10kW Comparison based on: Input Range: 300VDC - 450VDC Output/DC-Link : 640VDC Option 1 Higher Power 50 HP instead of 30 HP Design Options using SiC to reduce $ per Watt Option 2 Smaller Cooling at same 30 HP Option 3 Smaller Cooling + Higher Frequency at same 30 HP Si SiC 30 HP 50 HP Si Heat Sink SiC HS Si SiC FSW = 8 khz RØ HS = 0.16 C/W PLOSS Total = 369 W n = 99.0% TJ = 127 C FSW = 8 khz RØ HS = 0.55 C/W (1/3 size) PLOSS Total = 153 W n = 99.3% TJ = 135 C FSW = 35 khz (>4 ) RØ HS = 0.4 C/W (2/3 size) PLOSS Total = 204 W n = 99.1% TJ = 136 C
4 SiC Discrete and Module Offering Discrete & Module Diodes Discrete MOSFETs MOSFET Modules SiC/Si Hybrid 700V, 1200V 600V, 700V, 500V, 600V, 800V 1700V 1200V, 1700V 900V, 1000V, 1200V 10A 90A 5A 130A 20A 480A 11A 480A RDS(on) 33mW 800m W 6mW 110mW 600V, 650V, 1200V, 1700V D3PAK, SOT-227, D3PAK, D3, SOT-227, D3PAK, TO-247, T-MAX, SP1, TO-220, TO-247, SP1, SP3, SP3F, SOT-227, SP1, SP3F, TO-247-2, TO-247 SOT-227 SP6, SP6-P SP4, SP6, SP6-P RDS(on) Contact Richardson RFPD for details. 50x120, 48x94,, 62x122, 130x140, 56x110, 80x110, 67x131, Super Mini DIP 600V, 900V, 1200V 600V, 650V, 1200V 20A 70A 10A 100A RDS(on) 20mW 80mW 33x66 (Flow 0) 37x82 (Flow 1) 47x108 (Flow 2) 36x72 (Flow 1B), 33x66 (Flow 0) 35x37 (Flow 0B), 37x82 (Flow 1) 600V, 650V, 1200V, 1700V 900V, 1000V, 1200V, 1700V 1200V, 1700V 1A - 50A 5A -90A 20A-325A RDS(on) 25mW 1000m W 3.6mW 80m W TO-220-2, TO-220-F2 (Full Pack), TO-247, TO-247-2, TO-252-2, TO-263-2, QFN, TO-220 Isolated TO-247, TO-263-7L, TO-247-4L 45x108, 62x106, High Perf (65x110) Welcome to the SiC Tech Hub, brought to you by Richardson RFPD. SiC tech hub Need a Design Advisor? Contact us. SiC Tech Hub Realize the benefits of silicon carbide technology with Richardson RFPD s offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules. Subscribe (free!) to our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits.
5 Reference Designs / Evaluation Kits Part Number: CRD-20DD09P-2 20kW Full Bridge Resonant LLC Converter Using 1000V, 65mΩ SiC MOSFET in 4L-TO247 Part Number: CRD-060DD17P-2 60W Single-end flyback auxiliary power supply using1700v, 1Ω SiC MOSFET in surface mount 7L-D2PAK. Part Number: CRD8DD12P 8kW LLC zero-voltage switching (ZVS) converter Part Number: CRD-060DD12P 60W flyback auxiliary DC power supply Part Number: CRD-50DD12N 50kW interleaved boost converter evaluation unit Part Number: KIT8020-CRD-8FF1217P-1 SiC MOSFET/Diode evaluation kit with multiple circuit configurations Part Number: CRD-5FF0912P SiC MOSFET evaluation kit featuring 900V, 120mΩ SiC MOSFET in 7L-D2PAK package in half bridge configuration. Gate r Products Part Number: CGD15FB45P1 6-Channel SiC gate driver board for Wolfspeed CCSxxxM12CM2 modules. Part Number: MSCSICMDD/REF1 Dual universal SiC gate driver intended for Microsemi discrete and module products. Supplier: Microsemi Part Number: CGD15HB62P1 SiC half-bridge gate driver optimized for Wolfspeed 62mm 1200V modules Part Number: CRD-001 Single channel 1200V and 1700V SiC MOSFET gate driver board Part Number: RDHP-xxxx Reference designs for adapting standard and planar core products 2SC0115T, 2SC0435T, 2SC0650P, 1SC2060P and SCALE-ir TM IC for SiC modules. Supplier: Power Integrations SCALE-ir 1SC2060P Core RDHP-1417 Part Number: PT62SCMD12 Dual SiC gate driver for 62mm CASxxxM12BM2 1200V Modules Part Number: PT62SCMD17 Dual SiC gate driver for 62mm CASxxxM17BM2 1700V Modules Part Number: ADuM4121, ADuM4135, ADuM4136 High voltage single and dual-channel isolated gate driver ICs with 100kV/usec and 150kV/usec CMTI in 8-lead and 16-lead wide-body SOIC package. Supplier: Analog Devices Inc. Part Number: CGD15HB62LP SiC half-bridge gate driver optimized for Wolfspeed CAS325M12HM2 High Performance 65mm package
6 Package Styles Dimensions in millimeters TO TO-220 TO TO-247 T-MAX D3PAK (TO-268) SOT-227 (Isotop) (D3) (SP6) 43x73 (SP3F) (SP6P) 41x52 (SP1) 40x93 (SP4) 56x110 48x94 33x66 (Flow 0) 37x82 (Flow 1) 36x72 (Flow 1B) 80x110 SuperMini DIP 130x140 62x122 67x131 50x120 35x37 (Flow 0B) 47x108 (Flow 2) TO (DPAK) TO (D2PAK) TO-263-7L (7L D2PAK) QFN 3.3 TO-220-F2 (Full Pack) TO-247 TO-247-4L TO and TO-220 Isolated 65x110 (High Performance 65mm) 45x108 (EconoPACK TM 2) (D3) 2017 Richardson RFPD, Inc. All other product names and logos are trademarks of their respective manufacturers. Rev.3/17 DOC-007R1
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