Photovoltaic converter topologies suitable for SiC-JFETs

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1 Photovoltaic converter topologies suitable for SiC-JFETs Benjamin Sahan, Samuel V. Araújo, Thomas Kirstein, Lucas Menezes, Peter Zacharias Kompetenzzentrum für Dezentrale Elektrische Energieversorgungstechnik (KDEE), University of Kassel, Wilhelmshöher Allee 7, D-342 Kassel, Abstract SiC semiconductors offer very interesting characteristics and can be considered as a future trend in photovoltaic converter technology. The vertical JFET is an example of a very promising device, mainly due to its relative structural simplicity. Nevertheless, its inherent normally-on characteristic calls for specially tailored topologies that will be presented and discussed in this publication.. Introduction The Silicon Carbide (SiC) material is characterized by electrical field strength almost 9 times higher than normal Si, allowing the design of semiconductor devices with very thin drift layers and as a consequence low on-state resistance and reduced switching losses. In other words, such characteristic can be translated into the possibility of operating at higher blocking voltages with reduced losses. Increased reliability due to its robustness, especially against temperature and cosmic radiation-induced failure [] are additional highlights of this new technology. (see Fig. 2). From that point on, further increase of efficiency is not cost effective anymore. As a future trend SiC offers the possibility of operating at higher switching frequencies without significant prejudice on the efficiency which leads to the possibility of reducing the size of passive components and consequently the cost and volume of the circuit. 0% goal % year Fig. 2. Benchmark of commercially available PV inverters. Source: M.Meinhardt, SMA Fig.. Principle boundaries of Si compared to SiC devices These characteristics are especially interesting when applied in photovoltaic converters. There, efficiency is still one of the main market drivers in the industry. Today, enhancing the PV inverter efficiency by % could yield up to 45 /kwp 97 /kwp additional profit after 0 years of operation (linearly scaled according to [2]). For this reason, PV inverter technology rapidly improved during the last decade, as a peak efficiency of 99% will soon be achieved Other issues like EMC and AC-losses on the passive components shall nevertheless still be taken into consideration [3]. As for SiC transistors, the vertical JFET is considered favorable because it has a relatively simple structure [4]. Nevertheless, specially tailored power electronic architectures are required for this technology, as the device is inherently normally-on and has quite different characteristics when compared with conventional semiconductors; namely pinch-off voltage, gate drive units and transient characteristics. An alternative would be the operation in cascade with a low-voltage MOSFET, though such structure is out of the scope of this paper. Here, focus is given to the application of stand-alone ISBN: Proceedings PCIM Europe 2009 Conference 43

2 JFET devices, as several new solutions for grid connected PV systems suitable for normally-on SiC-JFETs are presented and discussed. To ensure the circuit is inherently safe and at the same time cost-effective, the following design guidelines should be followed: No hard short-circuit of DC-link capacitors when switches are normally on No short-circuit of grid side when switches are normally on Low SiC part count and highest possible SiC chip utilization 2. SiC-VJFET 2.. Properties The junction field effect transistor (JFET) is the most simply built up unipolar transistor from the group of the field effect transistors and corresponds in the construction to a modified diode. Types employing SiC are available only with the base material doped with n charge carriers. The corresponding JFETs consist of a n-type area surrounded by a p zone. To the n zone the connections are made from the drain and source, forming a conductive channel. The p zone forms the gate electrode and together with the n channel the referred pn diode. The majority of JFETs are normally-on devices. As it is with MOSFETs, the highest blocking voltage ratings at high currents are achievable by a vertical structure (VJFET). When the gateto-source voltage is zero (U GS =0) the n channel behaves as a resistance. If the gate is connected to a negative voltage with respect to the source, the conducting channel is squeezed by the extending blocking zone. With a maximum pinch of the channel, it practically becomes nonconducting. This tension is called pinch-off voltage (U p ) and for SiC- VJFETs is in the range of 6-28V. At a certain gate to source voltage and low U DS the channels behavior is ohmic while above a so called knee-voltage it becomes close to a current source (current limiting characteristic). Another advantage of SiC-JFETs is the possibility of avoiding the use of gate oxide, which had some stability problems in the past. JFETs also have promising perspectives regarding manufacturing costs and ruggedness Switching performance SiC-JFET vs. IGBT To evaluate the performance of the SiC-VJFETs devices, a switching test with a commutation cell was performed. A Trench IGBT rated at 200V, 25A from Infineon and a new prototype SiC- VJFET rated at 200V with a nominal R ds_on of 0.3 (T0-220) were compared. A SiC freewheeling diode C2D020D was employed. The junction temperature was 25 C and the blocking voltage and gate resistance were 450V and 4. for the IGBT and 400V and 5 for the JFET. The turn-on energy losses were actually higher for the JFET: 23Ws for the JFET at 0A and 80Ws for the IGBT at 5A. One explanation for the JFETs slow dv/dt at turn-on is the high internal gate resistance of the prototype. Further technological improvements will most likely lead to an improved turn-on performance. Nevertheless, the JFET had much superior turnoff behavior with only 30Ws at 0A in comparison with the 783Ws at 5A from the IGBT. Such large difference is mainly explained by the tail current during the blocking transient of the IGBT. As a conclusion, the total specific switching losses of this JFET were approximately 60% less than the Trench IGBT. Current [A] Fig. 3. Turn-on of JFET, V=400V Current [A] Fig. 4. Turn-off of JFET, V=400V Voltage [V] Voltage [V] ISBN: Proceedings PCIM Europe 2009 Conference 432

3 considered as an uncritical state, since the steady-state short circuit current is close to the rated current at the maximum power point. Fig. 5. Turn-on of IGBT, V=450V Fig. 6. Turn-off of IGBT, V=450V 3.2. Transformerless converter system with grounded PV generator In some cases, grounding one of the outputs of the PV generator is required due to safety standards or to prevent damage to certain thin film panels [5]. A specially designed transformerless DC-DC converter as depicted in Fig. 8 allows grounding either positive or negative terminals, since the PV generator is always decoupled from the grid. The operation principle is similar to a flyback converter, but without the associated problems related to leakage inductance. Both switches S and S2 are synchronously activated, charging the inductor with energy from the PV; meanwhile the diodes D and D2 remain blocked and the load is fed by the output capacitors C and C2. As the switches are deactivated, the diodes are directly polarized and the energy stored in the inductor is transferred to the load. In normal operation mode no current is flowing through the earth connection. 3. DC-DC Converters for transformerless PV sytems 3.. Boost converter In many countries transformerless PV systems became the main market trend due to its higher efficiency and reduced weight. In order to extend the PV voltage range or to ensure a safe operating area of the PV panel (kv max. system voltage) a boost converter is often included in medium power solar inverters (<00kW) (see Fig. 7). Fig. 7. Boost converter plus DC-AC inverter for transformerless PV system Since this boost converter is the front conversion stage it requires extremely high efficiency (>99%). Using a normally-on switch S is feasible when properly sizing the input capacitor C (C<<C2). When S is permanently on, C discharges through L and finally the PV generator goes into short circuit, which can be Fig. 8. Novel transformerless buck-boost converter system with (positively) grounded PV generator The application of SiC-JFETs is here possible since in the case of losing the gate power supply only the PV generator will be short-circuited, what can be considered uncritical. The referred circuit is also well suited for the application of SiC switches due to the higher voltage stress across the switches when compared to the classical boost converter. If the PV generators positive terminal is grounded, the voltage stress across S is equal to U C2 while for S2 it is the sum of U pv and U C. The inverse is valid for negative terminal grounding. In addition, the possibility of increasing the switching frequency and therefore reducing the size of the input inductor represents an important optimization possibility. ISBN: Proceedings PCIM Europe 2009 Conference 433

4 In the inverter stage, any standard voltage source half-bridge topology (2-Level and 3- Level) with center tapped DC link can be employed. 4. Transformerless PV-inverters 4.. Dual HF-Switch Voltage Source Inverter The following topology features a 6-switch voltage source power conversion scheme [6]. It consists of a buck converter where the inductor is located on the AC side (Fig. 9). For cos=, S3 S6 are switched at grid frequency and provide bipolar voltage while S and S2 are switched synchronously in HF mode and modulate the line current. In freewheeling state the diodes antiparallel to S3 S6 conduct the line current and the PV generator is disconnected from the grid since S and S2 are opened. This ensures that at no point HF common-mode currents can flow back through the parasitic capacitances of the PV generator as depicted in Fig. 0. As can be also seen the circuit allows the usage of normally-on switches. Each of the HF switches S/S2 is rated at only half of the DC input voltage which is commonly a great advantage when switching losses and specific on-resistance are concerned. Knowing that SiC devices usually outperform MOSFETs only at higher rated blocking voltages, there might not be significant benefit from using SiC instead of conventional Si devices though Indirect Current Source Inverter The normally-on characteristic of JFETs promotes its usage in PWM Current Source Inverters since it guarantees that there is always a path for the DC-link inductor current [7]. The PWM CSI has several advantages, such as voltage boosting capability but at the cost that each switch needs an additional series diode to provide reverse voltage blocking. This significantly increases the conduction losses so that the application is limited to inverters with very small PV voltage range [8]. One also needs to take into account that in case all switches are normally-on, the bridge works as a diode rectifier and reverse biases the PV generator. The topology in Fig. is derived from a classical power factor correction (PFC) circuit and can be regarded as an indirect Current Source Inverter. Due to its simplicity it is often used in small power PV applications [9]. Fig. 9. Dual HF-Switch voltage source inverter topology and parasitic DC capacitances In contrast to this, the classical full-bridge with unipolar PWM or single-phase chopping (mixed HF and LF switches) has significant EMC issues unless the grid side is isolated. Fig. 0. Positive current flow left) on-state right) freewheeling Fig.. Single HF-switch Indirect Current Source Inverter The basic principle is to control the DC-link current in L with an unipolar buck converter thus using only one HF switch. The buck converter provides a rectified sinusoidal current which is inverted by the low-frequency switches S2 S5. Finally, a relatively small AC-capacitor smoothens the DC-link current. As discussed before, HF common mode leakage currents are also minimized, since the potential of the PV generator is zero for one halfwave and equals the grid voltage for the other one. ISBN: Proceedings PCIM Europe 2009 Conference 434

5 A kw laboratory prototype of this topology as presented in Fig. 2 was implemented to further evaluate the performance of normally-on SiC- JFETs. The detailed design can be found in the appendix. L C Neutral-point clamped The well known voltage source 3-level Neutralpoint clamped (NPC) inverter can incorporate normally-on switches (S/S2), since each branch consists of an indirect series connection of two switches and an external freewheeling diode. For cos= no switching losses occur in S3/S4, so that slow normally-off switches can be used which make the circuit inherently safe. C S S2 S5 Fig. 2. kw test board of the Indirect Current Source Inverter A first test was made with an ohmic load and the electric efficiency (without aux. power supply) reached 98.6% at full load and 98.9% at half load (power analyzer: Yokogawa WT3000, MCTS 200 current transducer). These results show a very positive trend for future applications especially considering that only one HF switch is needed. i L i C2 i N Fig. 3. Experimental results at P=kW;U =400V dc,u N =230V ac A major drawback of this topology is its inability to provide reactive power, although this is not actually required in the low voltage grid. Moreover, in a practical circuit it is rather difficult to switch the MOSFETs S2 S5 at the exact desired time necessary to prevent shortcircuiting C2 through the body diodes. Fig. 4. Phase leg of the NPC inverter with JFET/ IGBT combination In general, the NPC with JFETs appears to be a very suitable topology for PV, considering that it can be also used in 3-phase applications and that the PV potential is fixed. However, the input voltage required to directly feed the grid with a single-stage design surpasses the present limits established on standards for low voltage applications (000V). It is therefore still necessary to employ a boost stage to step up the DC-link voltage to the required level Buck-boost inverter A newly developed circuit presented in [0] features a bipolar buck boost topology with only two HF switches. The circuit is similar to the Z- Source Inverter [] but as opposed to the original Z-Source the potential to earth is fixed, so high frequency current flow between the input and output sides is avoided. This is an important feature for PV applications, as discussed before. In general, the Z-source topology has advantages concerning EMI immunity and robustness, such as miss-gating does not destroy the circuit. The special benefit of this type of converter is that it can step-up and stepdown the input voltage. This ability is desirable for systems with a wide fluctuating DC voltage range, e.g. PV systems and Fuel Cells. However, when all switches are normally-on, the Z-Source inverter is not inherently safe since a short circuit of the grid through the freewheeling diodes may occur. The circuit depicted in Fig. 5 ISBN: Proceedings PCIM Europe 2009 Conference 435

6 presents a solution to this problem by inserting active freewheeling paths. The added switches S3, S4 operate in low frequency mode synchronously with the grid and normal IGBTs/MOSFETs with series diodes, or even reverse blocking IGBTs can be used. Fig. 5. Bipolar buck boost with two HF switches and two LF frequency switches The principle operation consists of three steps: inductor charge step, where both HF switches S and S2 are closed synchronously; positive output step, where S is modulated while S2 still opened; and the negative output step, where S2 is modulated and S is still opened. For a correct operation some points should be commented. The voltage stress of switches is directly proportional to the conversion gain, meaning that considering common nominal European grid voltages in the range of 220V 240V ac, the input DC voltage should be about 400V to keep the maximum voltage stress across the switches under 000V (assuming 200V switches). In case of failure and shortcircuit of the DC side, saturation of the inductors could occur, leading to increasing currents through the switches. Such current is nevertheless limited by the JFETs, when the inductors are appropriately sized. This circuit executes the inversion and the stepup of the PV panel voltage as a single power conversion stage with few parts, i.e. only two HF switches which can be realized as SiC-JFETs. 5. Conclusion The photovoltaic branch with its special requirements offers an interesting application area for SiC-JFETs. These can be operated at high voltage and higher switching frequencies without significant prejudice on the efficiency which leads to the possibility of reducing the size of passive components and consequently the cost and volume of the circuit. However, since their characteristics are quite different from conventional semiconductors, new design strategies are required. Normally-on switches can be employed by using specially tailored topologies. Some of them feature an indirect series connection of fast switches (SiC) with possibly high voltage stress and conventional (Si) switches with lower voltage stress or low switching frequency. This can provide a measure to avoid short circuit paths in case of failure even when the HF switch is normally-on. Current Source Inverter topologies or those derived from the Z-Source Inverter present other viable options. There could be also very interesting potential for application in DC- DC converter systems, especially those that can replace costly transformer stages. Finally, this paper presented a kw laboratory prototype inverter which was constructed to further evaluate the performance of SiC-JFETs. A fairly high efficiency using just one JFET was measured which gives a positive outlook for its future application in PV systems. 6. Acknowledgement The authors would like to thank SiCED/Infineon, especially Dr. Roland Rupp, for their support. 7. Literature [] G. Soelkner, W. Kaindl, M. Treu and D. Peters, Reliability of SiC power devices against cosmic radiation-induced failure, Materials science forum, [2] B. Burger, B. Goeldi, D. Kranzer and H. Schmidt, 98.8% Inverter Efficiency With SiC Transistors, 23 rd EU PVSEC, Valencia, Spain, [3] P. Zacharias Perspectives of SiC power devices in highly efficient renewable energy conversion systems, ECSCRM Barcelona [4] P. Friedrichs, Compact Power Electronics due to SiC Devices, 5th International Conference on Integrated Power Electronics Systems, [5] S. V. Araújo, P. Zacharias and B. Sahan, Novel Grid-Connected Non-Isolated Converters for Photovoltaic Systems with Grounded Generator, PESC 08, Rhodes, Greece, [6] R. Gonzalez, J. Lopez, P. Sanchis and L. Marroyo Transformerless inverter for single-phase photovoltaic systems, IEEE Trans. Power Electron., vol. 22, pp. 693, Mar ISBN: Proceedings PCIM Europe 2009 Conference 436

7 [7] I. Koch, F. Hinrichsen and W.-R. Canders Application of SiC-JFETs in Current Source Inverter Topologies, th European Conference on Power Electronics and Applications, Dresden, Germany, [8] B. Sahan, A.N. Vergara, N. Henze, A. Engler, P. Zacharias, A Single-Stage PV Module Integrated Converter Based on a Low-Power Current-Source Inverter, IEEE Transactions on Industrial Electronics, Vol. 55, No. 7, July [9] C. Rodriguez and G.A.J. Amaratunga, Long-Lifetime Power Inverter for Photovoltaic AC Modules, IEEE Trans. on Industrial Electronics, vol. 55, no. 7, pp , July [0] P. Zacharias, L.M. Menezes and J. Friebe, 2 New Topologies for Transformerless Grid Connected PV-Systems with Minimum Switch Number, PCIM Nuremberg, [] Y. Huang, M. Shen, F.Z. Peng and J. Wang, Z-Source Inverter for Residential Photovoltaic Systems. IEEE Trans. On Power Electronics, Vol. 2. No. 6, p , Nov Appendix Design of the Indirect Current Source Inverter (4.2) Modulation index: M 2U U N Duty cycle of S: Dt () Msin( t) DC-link voltage: U D() t U 2 Ideal inductor current L i () t 2I sin( t) L N Max. ripple current in L at D=0,5 i U L,max 4 L Inductance for i,max 0, 2I _ U L 4 f 0,2I f sw sw N _ peak RMS current S: 0ms 2 S_ RMS 0 L ms 0 L N peak I i () t D() t dt RMS current D: 0ms 2 D_ RMS 0 L ms 0 I i ()( t D()) t dt RMS current S2 S5: I S2... S5_ RMS I N 2 Table : Chosen parameters and components P Nominal power P=kW U N Nominal AC output voltage U N =230V U Nominal DC input voltage U =400V (could be practically up to 800V) f sw Nom. switching frequency f sw =6kHz S SiC-JFET from SiCED/Infineon 200V, R DSon = 0.3 S2 S5 IPW60R045CP D C2D020D C.6mF, 9.4F L 3mH, 00m C2 680nF Ripple current in L UU2D() t il () t L f s ISBN: Proceedings PCIM Europe 2009 Conference 437

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