GaN Brings About a New Way of Thinking to Power Conversion Stephen Colino Efficient Power Conversion Corporation

Transcription

1 GaN Brings About a New Way of Thinking to Power Conversion Stephen Colino Efficient Power Conversion Corporation 1

2 GaN Wide Bandgap Hetero Junction Distance electrons need to travel Si Conductivity GaN Wide Bandgap Shorter distance required to support voltage Hetero Junction Forms 2 Dimensional Electron Gas (2DEG) Electrons not bound to any particular atom Higher conductivity GaN is still far from theoretical limits EPC The Leader in GaN Technology 2

3 EPC The Leader in GaN Technology 3 egan FET Structure on Silicon - AlGaN Electron + Generating Layer Dielectric S G GaN D Two Dimensional Electron Gas (2DEG) Aluminum Nitride Isolation Layer Si For a given R DS(on) and V DS capability Smaller device Lower Capacitance Zero Q RR Lower Inductance

4 GaN Developing Quickly Efficiency (%) GaN Circa 2012 GaN Circa Output Current (A) GaN Circa 2015 GaN Circa 2014 V IN =12 V, V OUT =1.2 V, f sw =1 MHz

5 GaN Versus Silicon Parameter Conditions EPC2045 BSC070N10NS5 R DS(on) (typ) V GS = 5 V*, T J = 25 C 5.6 mω 6 mω Q G (typ) V GS = 5 V, V DS = 50 V, I D = 16 A* 5.2 nc 30 nc Q GD (typ) V DS = 50 V 1.1 nc 6 nc Q SW (typ) V GS = 5 V, V DS = 50 V, I D = 10 A* 1.6 nc 11 nc Q OSS (typ) V DS = 50 V 21 nc 30 nc E OSS (typ) V DS = 50 V 0.4 µj 1.45 µj** Q RR (typ) V DS = 50 V, I F = 20 A, di F /dt = 100 A/µs 0 nc 89 nc L CS (estimated) 0.1 ph 0.5 ph R G (typ) 0.6 Ω 1 Ω R DS(on) x Q SW Switching FOM 8.96 mω nc 70.4 mω nc R DS(on) x (Q OSS + Q RR ) Rectifier FOM 118 mω nc 624 mω nc R Ө(JC) Thermal impedance to top 1.4 C/W 20 C/W Area 3.75 mm mm 2 *V GS = 10 V, I D = 40 A for BSC070N10NS5 **Estimated by taking second integral of C OSS versus C DS curve EPC The Leader in GaN Technology 4

6 Wafer Level Packaging Single interface with PCB No wires or clips Active area Intimate with PCB for inductance cancelling RoHS 6 of 6 MSL-1 EPC The Leader in GaN Technology Company Confidential Information 7

7 What egan Technology Has Less Of L D C GD C DS C GS L CS Q RR R G 100 V egan FET 5.6 mω 80 V Si MOSFET 10.3 mω 10 V/ div 10 A 20 ns/ div Less parasitic capacitance and inductance Efficient at high frequency Less overshoot and ringing EPC The Leader in GaN Technology 8

8 WLP - Excellent Thermally Dual Sided Cooling Gap Filler Thermal interface (electrically isolating) Heatsink (200 PSI max)

9 What Does Fast, Low Loss Switching Buy? EPC The Leader in GaN Technology 10

10 Extreme Output High Frequency Sensor Sensor leads Kapton Heat-sink RTV adhesive EPC The Leader in GaN Technology 11

11 EPC The Leader in GaN Technology Extreme Output High Frequency Steps indicate duration to reach thermal equilibrium 95 EPC2047 Duration Heatsink Test 140 V in 28 V out stepped to 34 A Efficiency [%] kHz Eff 200 khz Eff 250kHz Loss Total Power Loss [W] khz Loss Time [minutes]

12 Increase Bandwidth in Power Supplies for Base Stations PA with constant voltage acts as constant power dissipater GaN enables high bandwidth power supply 4 phase, 60 W 92% Power system efficiency 20 MHz, 7 db PAPR LTE envelope signal EPC The Leader in GaN Technology Company Confidential Information 13

13 Reduce Notebook and Tablet Size 3 mm x 1.5 mm half bridge 100 nh inductor Reduces board system height Reduces voltage regulator footprint 50 mm 2 x 1.2 mm high EPC The Leader in GaN Technology Company Confidential Information 14

14 Reduce Size and Cost of 48 V to 12 V 600 W Isolated 600 W Isolated 500 W Buck (or Boost) f 100 khz 200 khz 500 khz 1 MHz L 6.8 uh 3.3 uh 1 uh 0.68 uh I PP 13.2 A 13.6 A 18 A 13.2 A Inductor IHLP8787GZ-51 IHLP6767GZ-51 IHLP5050CE-01 IHLP3232DZ-01 Size (mm) 22 x 22.5 x x 17.2 x x 13.2 x x 8.6 x 4 DCR (mω) EPC The Leader in GaN Technology 15

15 Wireless Power Transfer 6.78 MHz and MHz magnetic resonance Power into the body Power a desk 100 W + demonstrated EPC The Leader in GaN Technology 16

16 Find the Richness in Music 2.11 mm 400 W into 4 ohms 1.63 mm FFT from 20 Hz to 20 khz of a 1 khz signal at -60 dbr Where s the heatsink? Increased open loop linearity reduces magnitude of feedback EPC The Leader in GaN Technology 17

17 Increase Resolution of 3D Imaging 43 A, 75 V, 2.8 ns, Laser Driver IC LiDAR 3D imaging systems chase the speed of light (30 cm/ns (1 ft/ns)) Breaking distance is 150 m at 160 km/h Identify the object EPC The Leader in GaN Technology 18

18 Conclusions GaN provides fast, low loss switching Fast, low loss switching enables different ways to solve power conversion and deliver problems EPC The Leader in GaN Technology 19