Power Loss of GaN Transistor Reverse Diodes in a High Frequency High Voltage Resonant Rectifier

Transcription

1 APEC 2017 GaN Power Loss Talk Sanghyeon Park 1 / 22 Stanford University APEC 2017 (Tampa, FL) Power Loss of GaN Transistor Reverse Diodes in a High Frequency High Voltage Resonant Rectifier Sanghyeon Park and Juan Rivas-Davila spark15@stanford.edu

2 Resonant converter structure APEC 2017 GaN Power Loss Talk Sanghyeon Park 2 / 22 Stanford University Control V in + R L Inverter Transformation Stage Rectifier [2] J.M. Rivas, O. Leitermann, Y. Han, et al, A very high frequency dc-dc converter based on a class Φ 2 resonant inverter, in Proc. Power Electronics Specialists Conference, pp [4] W. Liang, J. Glaser, and J. Rivas, MHz high density dc-dc converter with PCB inductors, in Proc Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013, pp

3 Resonant converter structure APEC 2017 GaN Power Loss Talk Sanghyeon Park 2 / 22 Stanford University Control V in + R L Inverter Transformation Stage Rectifier Inverter Takes dc input power, deliver ac power [2] J.M. Rivas, O. Leitermann, Y. Han, et al, A very high frequency dc-dc converter based on a class Φ 2 resonant inverter, in Proc. Power Electronics Specialists Conference, pp [4] W. Liang, J. Glaser, and J. Rivas, MHz high density dc-dc converter with PCB inductors, in Proc Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013, pp

4 Resonant converter structure Control V in + R L Inverter Transformation Stage Rectifier Inverter Takes dc input power, deliver ac power Transformation stage Provides impedance matching [2] J.M. Rivas, O. Leitermann, Y. Han, et al, A very high frequency dc-dc converter based on a class Φ 2 resonant inverter, in Proc. Power Electronics Specialists Conference, pp [4] W. Liang, J. Glaser, and J. Rivas, MHz high density dc-dc converter with PCB inductors, in Proc Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013, pp APEC 2017 GaN Power Loss Talk Sanghyeon Park 2 / 22 Stanford University

5 Resonant converter structure Control V in + R L Inverter Transformation Stage Rectifier Inverter Takes dc input power, deliver ac power Transformation stage Provides impedance matching Rectifier Takes ac power, delivers dc power to R L [2] J.M. Rivas, O. Leitermann, Y. Han, et al, A very high frequency dc-dc converter based on a class Φ 2 resonant inverter, in Proc. Power Electronics Specialists Conference, pp [4] W. Liang, J. Glaser, and J. Rivas, MHz high density dc-dc converter with PCB inductors, in Proc Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013, pp APEC 2017 GaN Power Loss Talk Sanghyeon Park 2 / 22 Stanford University

6 High frequency power conversion is enabling new applications and ways to design converters APEC 2017 GaN Power Loss Talk Sanghyeon Park 3 / 22 Stanford University Portable PEF sterilizer [1] [1] L. Raymond, W. Liang, L. Gu and J. R. Davila, MHz high voltage multi-level resonant DC-DC converter, 2015 IEEE 16th Workshop on Control and Modeling for Power Electronics (COMPEL), Vancouver, BC, 2015, pp. 1-8.

7 High frequency power conversion is enabling new applications and ways to design converters APEC 2017 GaN Power Loss Talk Sanghyeon Park 3 / 22 Stanford University Portable PEF sterilizer [1] Cubesat thrusters [2] [1] L. Raymond, W. Liang, L. Gu and J. R. Davila, MHz high voltage multi-level resonant DC-DC converter, 2015 IEEE 16th Workshop on Control and Modeling for Power Electronics (COMPEL), Vancouver, BC, 2015, pp [2] D. Biggs, S. Avery, L. Raymond, W. Liang, N. Gascon, A. Fabris, J. Rivas, M. Cappelli A Compact Helicon Thruster for CubeSat Applications IEPC /ISTS-2015-b-244

8 High frequency power conversion is enabling new applications and ways to design converters APEC 2017 GaN Power Loss Talk Sanghyeon Park 3 / 22 Stanford University Portable PEF sterilizer [1] Cubesat thrusters [2] 3D printing [3] [1] L. Raymond, W. Liang, L. Gu and J. R. Davila, MHz high voltage multi-level resonant DC-DC converter, 2015 IEEE 16th Workshop on Control and Modeling for Power Electronics (COMPEL), Vancouver, BC, 2015, pp [2] D. Biggs, S. Avery, L. Raymond, W. Liang, N. Gascon, A. Fabris, J. Rivas, M. Cappelli A Compact Helicon Thruster for CubeSat Applications IEPC /ISTS-2015-b-244 [3] W. Liang, L. Raymond and J. Rivas, 3-D-Printed Air-Core Inductors for High-Frequency Power Converters, in IEEE Transactions on Power Electronics, vol. 31, no. 1, pp , Jan

9 Class-DE resonant rectifier APEC 2017 GaN Power Loss Talk Sanghyeon Park 4 / 22 Stanford University i s (t) L C C DCblock node X C j,dgnd D gnd D out C j,dout AC input LC tank Load + C o R L V out A high efficiency resonant rectifier is the key part of the system

10 There should be only conduction loss in theory APEC 2017 GaN Power Loss Talk Sanghyeon Park 5 / 22 Stanford University v D + id C j,d V out = rectifier output voltage f s = switching frequency I out = rectifier output current

11 There should be only conduction loss in theory v D V out v D + id C j,d V out = rectifier output voltage f s = switching frequency I out = rectifier output current Voltage across diode v D Zero voltage turn-on 1/f s t APEC 2017 GaN Power Loss Talk Sanghyeon Park 5 / 22 Stanford University

12 There should be only conduction loss in theory APEC 2017 GaN Power Loss Talk Sanghyeon Park 5 / 22 Stanford University v D + id V out = rectifier output voltage f s = switching frequency I out = rectifier output current v D V out C j,d Voltage across diode v D Zero voltage turn-on Current through diode i D Zero current turn-off i D 1/f s t i D =I out t

13 There should be only conduction loss in theory APEC 2017 GaN Power Loss Talk Sanghyeon Park 5 / 22 Stanford University v D + id V out = rectifier output voltage f s = switching frequency I out = rectifier output current v D V out i D C j,d 1/f s t Voltage across diode v D Zero voltage turn-on Current through diode i D Zero current turn-off Junction capacitance energy recycled through resonance i D =I out t

14 There should be only conduction loss in theory APEC 2017 GaN Power Loss Talk Sanghyeon Park 5 / 22 Stanford University v D + id V out = rectifier output voltage f s = switching frequency I out = rectifier output current v D V out i D C j,d 1/f s t Voltage across diode v D Zero voltage turn-on Current through diode i D Zero current turn-off Junction capacitance energy recycled through resonance Zero reverse recovery when SiC diodes or GaN transistor reverse diodes are used i D =I out t

15 SiC Schottky diodes exhibit high frequency losses not included in manufacturer simulation models APEC 2017 GaN Power Loss Talk Sanghyeon Park 6 / 22 Stanford University Loss comparison in 600 V SiC diodes operating at MHz Thermal image of a 40 W, 500 V, MHz class-φ 2 rectifier L. C. Raymond, W. Liang and J. M. Rivas, Performance evaluation of diodes in MHz Class-DE resonant rectifiers under high voltage and high slew rate conditions, 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics (COMPEL), Santander, 2014, pp. 1-9.

16 APEC 2017 GaN Power Loss Talk Sanghyeon Park 7 / 22 Stanford University GaN s zero reverse recovery raised hopes for improvement Tying the gate to the source makes GaN transistor behave like a diode. GaN Transistor G D S

17 APEC 2017 GaN Power Loss Talk Sanghyeon Park 7 / 22 Stanford University GaN s zero reverse recovery raised hopes for improvement Tying the gate to the source makes GaN transistor behave like a diode. GaN Transistor G D S

18 APEC 2017 GaN Power Loss Talk Sanghyeon Park 7 / 22 Stanford University GaN s zero reverse recovery raised hopes for improvement Tying the gate to the source makes GaN transistor behave like a diode. GaN Transistor G D S

19 APEC 2017 GaN Power Loss Talk Sanghyeon Park 7 / 22 Stanford University GaN s zero reverse recovery raised hopes for improvement Tying the gate to the source makes GaN transistor behave like a diode. GaN Transistor G D S Eric Person (Infineon) Practical Application of 600 V GaN HEMTs in Power Electronics, Professional Education Seminar, APEC 2015

20 APEC 2017 GaN Power Loss Talk Sanghyeon Park 8 / 22 Stanford University The experimental efficiency did not match the simulation 100 W 500 V MHz class-de resonant rectifier with GS66502B working as a diode. Simulation Efficiency 94% Power loss in total 6W Power loss in device 0.8W

21 APEC 2017 GaN Power Loss Talk Sanghyeon Park 8 / 22 Stanford University The experimental efficiency did not match the simulation 100 W 500 V MHz class-de resonant rectifier with GS66502B working as a diode. Simulation Experiment Efficiency 94% 90% Power loss in total 6W 11 W Power loss in device 0.8W

22 APEC 2017 GaN Power Loss Talk Sanghyeon Park 8 / 22 Stanford University The experimental efficiency did not match the simulation 100 W 500 V MHz class-de resonant rectifier with GS66502B working as a diode. Simulation Experiment Efficiency 94% 90% Power loss in total 6W 11 W Power loss in device 0.8W 3.0W

23 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve. Dout Dgnd 41 Temperature W APEC 2017 GaN Power Loss Talk Sanghyeon Park 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

24 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve. 100mW Dout Dgnd Temperature W APEC 2017 GaN Power Loss Talk Sanghyeon Park 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

25 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve. 100mW 200mW Dout Dgnd Temperature W APEC 2017 GaN Power Loss Talk Sanghyeon Park 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

26 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve. 100mW 200mW 300mW 26.5 Dout Dgnd Temperature W APEC 2017 GaN Power Loss Talk Sanghyeon Park 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

27 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve. 100mW 200mW 300mW mW Dout Dgnd 41 Temperature W APEC 2017 GaN Power Loss Talk Sanghyeon Park 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

28 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve. 100mW 200mW 300mW mW mW Dout Temperature W APEC 2017 GaN Power Loss Talk Dgnd 41 Sanghyeon Park 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

29 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve APEC 2017 GaN Power Loss Talk Sanghyeon Park Dout Dgnd Temperature 100mW 200mW 300mW mW mW mW W 9 / W 0.4W 0.6W Power Dissipation 0.8W Stanford University

30 Thermometric estimation of the device power loss I DC power loss (constant current) and temperature measured to get a T[ C]vs.Pdiss calibration curve APEC 2017 GaN Power Loss Talk Sanghyeon Park Dout Dgnd Temperature 100mW 200mW 300mW mW mW mW y = x R² = W 9 / 22 y = 19.88x R² = W 0.4W 0.6W Power Dissipation 0.8W Stanford University

31 Thermometric estimation of the device power loss APEC 2017 GaN Power Loss Talk Sanghyeon Park 10 / 22 Stanford University Rectifier at 13.56MHz, 500V output voltage 34.2 Diode temperature is measured during rectifier operation. The power loss is read from the calibration plot.

32 Thermometric estimation of the device power loss Temperature APEC 2017 GaN Power Loss Talk Sanghyeon Park 10 / 22 Stanford University Rectifier at 13.56MHz, 500V output voltage Dout y = x R² = Dgnd W 0.2W 0.4W 0.6W 0.8W Power Dissipation Diode temperature is measured during rectifier operation. The power loss is read from the calibration plot. Thermometric calibration is appropriate for our situation where the circuit is sensitive even to picofarad-level parasitic.

33 Power loss comparison of devices with similar V-I ratings APEC 2017 GaN Power Loss Talk Sanghyeon Park 11 / 22 Stanford University Blue bars are GaN transistors and red bars are SiC diodes. GaN power loss is much larger than predicted by simulation. Power loss in device, when P out = 9 W, V out = 170 V, f = MHz, I dc = 50 ma Transphorm 1.6W GaNSys Navitas Cree 8Amp Cree 7Amp Cree 3Amp STMicro simulation 0.9W 0.5W 0W 1W 2W 3W 4W 5W 6W 7W 8W 9W 10W

34 Power loss comparison of devices with similar V-I ratings APEC 2017 GaN Power Loss Talk Sanghyeon Park 11 / 22 Stanford University Blue bars are GaN transistors and red bars are SiC diodes. GaN power loss is much larger than predicted by simulation. Power loss in device, when P out = 18 W, V out = 350 V, f = MHz, I dc = 50 ma Transphorm 5.1W GaNSys Navitas Cree 8Amp Cree 7Amp Cree 3Amp STMicro simulation 1.9W 1.0W 0W 1W 2W 3W 4W 5W 6W 7W 8W 9W 10W

35 Power loss comparison of devices with similar V-I ratings APEC 2017 GaN Power Loss Talk Sanghyeon Park 11 / 22 Stanford University Blue bars are GaN transistors and red bars are SiC diodes. GaN power loss is much larger than predicted by simulation. Power loss in device, when P out = 25 W, V out = 500 V, f = MHz, I dc = 50 ma Transphorm GaNSys Navitas Cree 8Amp Cree 7Amp Cree 3Amp STMicro simulation 1.4W 2.8W 10.2W (off the scale) 0W 1W 2W 3W 4W 5W 6W 7W 8W 9W 10W

36 Power loss comparison of devices with similar V-I ratings APEC 2017 GaN Power Loss Talk Sanghyeon Park 12 / 22 Stanford University Blue bars are GaN transistors and red bars are SiC diodes. GaN power loss is much larger than predicted by simulation. Power loss in device, when P out = 25 W, V out = 500 V, f = MHz, I dc = 50 ma Transphorm 5.7W GaNSys Navitas Cree 8Amp Cree 7Amp Cree 3Amp STMicro simulation 1.3W 0.7W 0W 2W 4W 6W 8W 10W 12W 14W

37 Power loss comparison of devices with similar V-I ratings APEC 2017 GaN Power Loss Talk Sanghyeon Park 12 / 22 Stanford University Blue bars are GaN transistors and red bars are SiC diodes. GaN power loss is much larger than predicted by simulation. Power loss in device, when P out = 25 W, V out = 500 V, f = MHz, I dc = 50 ma Transphorm 10.2W GaNSys Navitas Cree 8Amp Cree 7Amp Cree 3Amp STMicro simulation 2.8W 1.4W 0W 2W 4W 6W 8W 10W 12W 14W

38 Power loss comparison of devices with similar V-I ratings APEC 2017 GaN Power Loss Talk Sanghyeon Park 12 / 22 Stanford University Blue bars are GaN transistors and red bars are SiC diodes. GaN power loss is much larger than predicted by simulation. Power loss in device, when P out = 25 W, V out = 500 V, f = MHz, I dc = 50 ma Transphorm 19.4W GaNSys Navitas Cree 8Amp Cree 7Amp Cree 3Amp STMicro simulation 2.6W 6.6W (off the scale) 0W 2W 4W 6W 8W 10W 12W 14W

39 APEC 2017 GaN Power Loss Talk Sanghyeon Park 13 / 22 Stanford University The observed power loss is not switching loss Voltage across GaN Systems part in 50mA 27.12MHz rectifier at various output voltages The waveforms show that soft switching is occurring and the capacitor energy is being recycled. 170V 350V 500V simulation 600V 500V 400V 300V 200V 100V 0V -100V 0ns 18ns 37ns 55ns 74ns 92ns 110ns

40 We compared the measured power losses with simulated conduction losses. APEC 2017 GaN Power Loss Talk Sanghyeon Park 14 / 22 Stanford University Experiment by thermometric estimation VS.

41 We compared the measured power losses with simulated conduction losses. APEC 2017 GaN Power Loss Talk Sanghyeon Park 14 / 22 Stanford University Experiment by thermometric estimation Simulated conduction loss by an ideal diode-r on -V fwd model VS. GaN transistor G D S + R on V fwd ideal

42 The observed power loss is not conduction loss, either APEC 2017 GaN Power Loss Talk Sanghyeon Park 15 / 22 Stanford University Simulated conduction loss follows the measured power loss with a constant offset. We suspect this power loss is not conduction loss. Power loss in GaN Systems part f = MHz, V out = 170 V, I dc = 0.05 to 0.4 A 10W 8W 6W 4W 2W Total Power Loss Conduction Loss 0W 0.0A 0.5A 1.0A

43 The observed power loss is not conduction loss, either APEC 2017 GaN Power Loss Talk Sanghyeon Park 15 / 22 Stanford University Simulated conduction loss follows the measured power loss with a constant offset. We suspect this power loss is not conduction loss. Power loss in GaN Systems part f = MHz, V out = 350 V, I dc = 0.05 to 0.9 A 10W 8W 6W Total Power Loss 4W 2W Conduction Loss 0W 0.0A 0.5A 1.0A

44 The observed power loss is not conduction loss, either APEC 2017 GaN Power Loss Talk Sanghyeon Park 15 / 22 Stanford University Simulated conduction loss follows the measured power loss with a constant offset. We suspect this power loss is not conduction loss. Power loss in GaN Systems part f = MHz, V out = 500 V, I dc = 0.05 to 1 A 10W 8W 6W Total Power Loss 4W 2W Conduction Loss 0W 0.0A 0.5A 1.0A

45 APEC 2017 GaN Power Loss Talk Sanghyeon Park 16 / 22 Stanford University The power loss increases with voltage The offset from the conduction loss remains almost constant with the increasing dc current. This additional power loss increases with the voltage across the device. The additional power loss from the conduction loss GaN Systems part at f = MHz 3W 2W 1W 170V 500V 350V 0W 0.0A 0.5A 1.0A

46 The observed power loss is not conduction loss, either APEC 2017 GaN Power Loss Talk Sanghyeon Park 17 / 22 Stanford University Simulated conduction loss follows the measured power loss with a constant offset. We suspect this power loss is not conduction loss. Power loss in GaN Systems part f = MHz, V out = 500 V, I dc = 0.05 to 1 A 15W 10W 5W Total Power Loss Conduction Loss 0W 0.0A 0.5A 1.0A

47 The observed power loss is not conduction loss, either APEC 2017 GaN Power Loss Talk Sanghyeon Park 17 / 22 Stanford University Simulated conduction loss follows the measured power loss with a constant offset. We suspect this power loss is not conduction loss. Power loss in GaN Systems part f = MHz, V out = 500 V, I dc = 0.05 to 1 A 15W 10W Total Power Loss 5W Conduction Loss 0W 0.0A 0.5A 1.0A

48 The observed power loss is not conduction loss, either APEC 2017 GaN Power Loss Talk Sanghyeon Park 17 / 22 Stanford University Simulated conduction loss follows the measured power loss with a constant offset. We suspect this power loss is not conduction loss. Power loss in GaN Systems part f = MHz, V out = 500 V, I dc = 0.05 to 1 A 15W 10W Total Power Loss 5W Conduction Loss 0W 0.0A 0.5A 1.0A

49 The power loss increases with frequency APEC 2017 GaN Power Loss Talk Sanghyeon Park 18 / 22 Stanford University The offset from the conduction loss remains almost constant with the increasing dc current. This additional power loss increases with the frequency. The additional power loss from the conduction loss GaN Systems part at V out = 500 V 9W 6W 3W 40.68MHz 27.12MHz 13.56MHz 0W 0.0A 0.5A 1.0A

50 The power loss increases with voltage and frequency Device Power Loss Similar trends were observed in the Navitas part. The power loss increases with voltage and frequency. Power loss in Navitas part f = MHz, I dc = 0.05 to 0.1 A 15W 10W 5W 500V 350V 170V 0W 0W 5W 10W 15W Simulated Device Power Loss APEC 2017 GaN Power Loss Talk Sanghyeon Park 19 / 22 Stanford University

51 The power loss increases with voltage and frequency Device Power Loss Device Power Loss Similar trends were observed in the Navitas part. The power loss increases with voltage and frequency. Power loss in Navitas part f = MHz, I dc = 0.05 to 0.1 A 15W Power loss in Navitas part V out = 500 V, I dc = 0.05 to 0.1 A 20W 10W 5W 500V 350V 170V 0W 0W 5W 10W 15W Simulated Device Power Loss 15W 10W 40.68MHz 5W 27.12MHz 13.56MHz 0W 0W 5W 10W 15W 20W Simulated Device Power Loss APEC 2017 GaN Power Loss Talk Sanghyeon Park 19 / 22 Stanford University

52 The power loss increases with temperature APEC 2017 GaN Power Loss Talk Sanghyeon Park 20 / 22 Stanford University Power loss in device in 25 W rectifier at MHz and 500 V output voltage 14W 12W 10W 4W 8W 3W 6W 2W 4W 1W 2W 0W 0W Case Temperature Transphorm GaNSys Navitas

53 Losses may be relevant to C oss 2.3 scaled Navitas capacitance almost coincides with GaN Systems part. 2.3 scaled Navitas power loss happens to match pretty well with GaN Systems part. 125pF 100pF 75pF 50pF 25pF Coss (Cgd + Cds) GS66502B NV W 0pF 0V 100V 200V 300V 400V 500V 0.0W Source-to-Drain Voltage 3.0W 2.5W 2.0W 1.5W 1.0W Power Loss at 27.12MHz GS66502B NV V 350V 500V Output Voltage 8W 7W 6W 5W 4W 3W 2W 1W 0W Power Loss at 500V GS66502B NV MHz 27.12MHz 40.68MHz Switching Frequency APEC 2017 GaN Power Loss Talk Sanghyeon Park 21 / 22 Stanford University

54 APEC 2017 GaN Power Loss Talk Sanghyeon Park 21 / 22 Stanford University Losses may be relevant to C oss 2.3 scaled Navitas capacitance almost coincides with GaN Systems part. 2.3 scaled Navitas power loss happens to match pretty well with GaN Systems part. Coss (Cgd + Cds) Power Loss at 27.12MHz GS66502B NV6110, x2.3 scaled GS66502B NV6110, x2.3 scaled 125pF 3.0W 100pF 2.5W 75pF 2.0W 50pF 1.5W 1.0W 25pF 0.5W 0pF 0V 100V 200V 300V 400V 500V 0.0W 170V 350V 500V Source-to-Drain Voltage Output Voltage Power Loss at 500V GS66502B NV6110, x2.3 scaled 8W 7W 6W 5W 4W 3W 2W 1W 0W 13.56MHz 27.12MHz 40.68MHz Switching Frequency

55 Conclusion APEC 2017 GaN Power Loss Talk Sanghyeon Park 22 / 22 Stanford University Power loss is observed when GaN transistor is gate-source-shorted and used as a diode.

56 Conclusion APEC 2017 GaN Power Loss Talk Sanghyeon Park 22 / 22 Stanford University Power loss is observed when GaN transistor is gate-source-shorted and used as a diode. The power loss is neither switching loss nor conduction loss.

57 Conclusion APEC 2017 GaN Power Loss Talk Sanghyeon Park 22 / 22 Stanford University Power loss is observed when GaN transistor is gate-source-shorted and used as a diode. The power loss is neither switching loss nor conduction loss. The power loss increases with voltage, frequency and temperature.

58 S-1: V-I ratings of devices subject to comparison Continuous Drain Current APEC 2017 GaN Power Loss Talk Sanghyeon Park 22 / 22 Stanford University Blue dots are GaN transistors and red dots are SiC diodes. 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A V-I Ratings at T = C TPH3002LS NV6110 GS66502B STPSC406 C3D04060E C3D1P7060Q CSD04060E 0V 200V 400V 600V 800V Blocking Voltage

59 S-2: Impact of inductor losses in GaN power loss estimation I Inductor losses are dominant source of power dissipation among passive components. I The thermal resistance between the inductor and GaN transistors is 0.38 C/W for both Lres and L. I This thermal resistance translates to +5 % error or less in the GaN transistor loss measurement. Resistor in place of impedance matching L Resistor in place of Lres Dgnd APEC 2017 GaN Power Loss Talk Sanghyeon Park 22 / 22 Stanford University