PWRLITE LU1014D High Performance N-Channel POWERJFET TM with PN Diode

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1 PWRLITE LU114D High Performance N-Channel POWERJFET TM with PN Diode Features Superior gate charge x Rdson product (FOM) Trench Power JFET with low threshold voltage Vth. Device fully ON with Vgs =.7V Optimum for Low Side Buck Converters Excellent for high frequency dc/dc converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies VRM Modules Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC- DC switching applications. The device is designed with a low threshold such that drivers can operate at V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required. This product has tin plated leads. IPAK Lead-free Pin Assignments G D Case TO21 (IPAK) S N Channel PowerJFET with PN Diode Pin Definitions Pin Number Pin Name Pin Function Description Product Summary 1 Gate Gate. Transistor Gate V DS (V) Rdson (Ω) I D (A) 2, 4 Drain Drain. Transistor Drain 24V Source Source. Transistor Source Absolute Maximum Ratings Parameter Symbol Ratings Units Drain-Source Voltage V DS 24 V Gate-Source Voltage V GS -12 V Gate-Drain Voltage V GD -28 V Continuous Drain Current I D 1 A Pulsed Drain Current I D 1 A Single Pulse Drain-to-Source Avalanche Energy at 2 C E AS 2 mj (V DD = 6V DC, IL=6A PK, L=.3mH, R G =1 Ω) Junction Temperature T J - to 1 C C Storage Temperature T STG -6 to 1 C C Lead Soldering Temperature, 1 seconds T 26 C C Power Dissipation (Derated at 2 C) P D 69 W LD114D Rev 1. 3-

2 Thermal Resistance Symbol Parameter DPAK Ratings RΘ JA Thermal Resistance Junction-to-Ambient 9 C/W RΘ JC Thermal Resistance Junction-to-Case 1.8 C/W Electrical Specifications (T A = +2 C, unless otherwise noted.) The φ denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Typ. Max. Units Static BV DSX Breakdown Voltage Drain to Source I D =. ma V GS = -4 V V BV GDO Breakdown Voltage Gate to Drain I G = -µa V Breakdown Voltage I G = -µa V BV GSO R DS(ON ) Gate to Source Drain to Source On I G = 4 ma, I D =1A Resistance 2 I G = 1 ma, I D =1A I G = ma, I D =1A V GS(TH) Gate Threshold Voltage V DS =.1 V, I D =2µA -1 V TCV GSTH Temperature Coefficient of V DS =.1 V, I D =2µA -2.6 mv/ o C Gate Threshold Voltage Dynamic Q Gsync Total Gate Charge Sync JFET V Drive =V,V DS =.1V (Fig. 2) 9.8 nc Q G Total Gate Charge V Drive =V, I D =1A,V DS =1V 12.4 nc Q GD Gate to Drain Charge V DS =13.V to V DS =1.V 8.1 nc Q GS Gate to Source Charge V GS =-4.V to V DS =13.V 4.3 nc Q SW Switching Charge V GS =-2V to V DS =1.V 9.1 nc R G Gate Resistance.7 Ω T D(ON ) Turn-on Delay Time. T R Rise Time V DD =1V, I D =1A 12.6 T D(OFF) Turn-off Delay V Drive = V 1.3 T F Fall Time Resistive Load 6.6 C ISS Input Capacitance 1147 C OSS Output Capacitance 467 C GS Gate-Source Capacitance V DS =1V, V GS = - V, 1MHz. 784 C GD Gate-Drain Capacitance (see Fig. 4) 363 Drain-Source Capacitance 14 C DS PN Diode I R Reverse Leakage V R =2V, Vgs = -4V.3 ma V F Forward Voltage I F = 1 A 812 mv V F Forward Voltage I F = 1 A 932 mv V F Forward Voltage I F = 2 A 11 mv Qrr Reverse Recovery Charge I s = 1 A di/dt = 1A/us, 7 nc Trr Reverse Recovery Time I s = 1 A di/dt = 1A/us, 13.3 ns Notes: 1. Current is limited by bondwire; with an Rthjc = 1.8 o C/W the chip is able to carry 8A. 2. Pulse width <= µs, duty cycle < = 2% Units mω mω ns pf 2 LD114D Lovoltech, Inc Freedom Circle - Santa Clara, CA 94 -USA Tel Fax

3 Typical Operating Characteristics (T A = +2 C, unless otherwise noted.) RDS(mO S(mOhms hms) E- 1.E-4 1.E-3 1.E-2 1.E-1 IG(A) Figure 1 R DSON vs Gate Current at I D 1A ID (ma) VDS (V) Figure 3 Breakdown Voltage Vds vs Id Vgs(V) LD114D, Qg vs Vgs, VDS=.1V Qg(nC) Figure 2 Gate Charge Qg sync for V DS =.1V C (pf) LD114D Capacitance vs. Vds, Vgs=-v Ciss Coss Crss Vds (volts) Figure 4 Capacitance vs Drain Voltage Vds IG(A) VGS(V) Figure I G vs Gate Voltage V GS ID(A) ID vs VGS, VDS=12V and VDS=.1V V DS = 12V V DS =.1V VGS(V) Figure 6 Transfer Characteristic LD114D Lovoltech, Inc Freedom Circle - Santa Clara, CA 94 -USA 3 Tel Fax

4 Typical Operating Characteristics (T A = +2 C, unless otherwise noted.) Normalized Rds Temp(C) ID(A) ID vs VDS LD114D, Tc = 2 o C I G = 1mA I G = 1µA V GS =.V V GS = V V GS =-.V 1 1 V GS = -1V VDS(V) Figure 7 R DSON =f(t); I D = -1A; I G = 4mA Figure 8 I D vs V DS Characteristics ID (Amps) VDS (Volts) Figure 9 PN Diode Voltage vs Current Id, Drain Current (A) 1 1µs Ig = 4mA Single Pulse 1µs 1 Tc = 2 C 1ms 1ms Rdson Limit DC Thermal Limit Package Limit Vds, Drain-to-Source Voltage (V) Figure 1 Safe Operating Area 7 Total Power Dissipation (W) ZthJA = f(tp) (parameter D= tp/t) 6 1.E+ D =. Ptot (W) Temperature (C) ZthJA (K/W) E-1..2 P(pk) tp T.1 Note: 1. Duty Factor D = tp/t Single Pulse 2. Peak Tj = P(pk)*Z thja + T A 1.E-2 1.E- 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 tp (s) Figure 11 Total Power Dissipation Figure 12 Normalized Thermal Response 4 LD114D Lovoltech, Inc Freedom Circle - Santa Clara, CA 94 -USA Tel Fax

5 Ordering Information Product Number PN Marking Package Notes: LU114D LU114D TO21 (IPAK) This product is Pb-Free and has Tin Plated leads Package and Marking Information DIMENSIONS mm. inch DIM. TYP. MIN. MAX. TYP. MIN. MAX. A A b b B C C D D E e H L L L H L L3 b b1 E B2 LU114D XXXXX XXXX e D L1 L2 L C A1 IPAK A C2 Back View D1 Life Support Policy LOVOLTECH s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information In definition or in Design This datasheet contains the design specifications for product development. Specifications may change without notice. Preliminary Initial Production This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. No Identification Needed In Production This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. LD114D Lovoltech, Inc Freedom Circle - Santa Clara, CA 94 -USA Tel Fax

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