Lot Number LN4913MR M SOT XY LN4913SRB S TO-92S XXXX. Lot Number. Part Number LN4913NR N TSOT XY LN4913ZRA Z DFN XY
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1 Low Current Consumption, High Sensitivity CMOS Hall IC General Description The is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Voltage is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some µa. The IC switching behavior is Omni polar; it can be switched on with either the North or South pole of a magnet. Typical Application Circuit 10K Applications Cover switch in clam-shell cellular phones Cover switch in Notebook PC/PDA Contact-less switch in consumer products Features Micro power design 1.65 V to 5.5 V battery operation High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress Digital output signal Switching for both poles of a magnet (omnipolar) Not suitable for automotive application Package SOT-23-3 TSOT-23-3 TO-92S DFN DFN2*2-3 VDD VOUT 1µF GND Ordering Information Part Number Package Code Package Lot Number Part Number Package Code Package Lot Number MR M SOT XY SRB S TO-92S XXXX NR N TSOT XY ZRA Z DFN XY TR T TO-92S XXXX LR L DFN2*2-3 13XY SRA S TO-92S XXXX Rev.1.0 Jun. 13,
2 Pin Configuration Sensitive Area ( 感应区 ) SOT-23-3/TSOT-23-3 (TOP VIEW) GND 1 2 VDD 3 VOUT Marking 13 XY MR Date Code NC VDD GND DFN (TOP VIEW) XY VDD NC VOUT VOUT NC DFN2*2-3 (TOP VIEW) XY 3 GND Pin Number Function Pin Name SOT-23-3/TSOT-23-3 DFN DFNWB2 2-3L Description VOUT Output Pin GND Ground VDD Supply Voltage - 4,6 - NC No Connection Sensitive Area ( 感应区 ) TO-92S (Front View) TR XXXX Pin Name Ordering Name Package Marking TR TO-92S VDD VOUT GND 4913 SRA TO-92S VOUT GND VDD 4913A SRB TO-92S VDD GND VOUT 4913B Rev.1.0 Jun. 13,
3 Function Block Diagram VDD 1 Bias and compensation circuits Active Error Compensation Hall Probe + - Chopped Amplifer Oscillator & Sequencer Comparator With Hysteresis Decision Logic Threshold Generator Latch 3 GND 2 VOUT Absolute Maximum Ratings Symbol Characteristics Values Unit V DD Supply voltage V I DD Operating current ma V OUT Output voltage V I OUT Output current ma T S Storage temperature range -40~+150 C T J Maximum junction temperature 150 C - ESD Protection 4000 V Electrical Characteristics AC/DC Characteristics (T A=+25,V DD=3.0V,Unless otherwise specified) Symbol Characteristic Conditions Min Type Max Unit V DD Supply voltage V I SAVG Averaged supply current ua I SOPAVG Averaged current during operating time ma I SOPT Peak current during operating time 4.5 ma I SSTB Supply current during standby time ua V QSAT Output Saturation Voltage IQ=1mA V I QLEAK Output on Leakage Current ua t r Output rise time R L=2.7KΩ C L=10pF us r f Output fall time R L=2.7KΩ C L=10pF us t op Operating time us t stb Standby time ms t op/t stb Duty cycle % t stu Start-up time of IC us Rev.1.0 Jun. 13,
4 Magnetic Characteristics (T A=+25,V DD=2.7V, Unless otherwise specified) Symbol Min Type Max Unit BOPS mt BOPN mt BRPS mt BRPN mt BHYS mt Is Operating Time Isopavg Isavg Isstb Standby Time top tstb 100µs 130ms Latch Output t VOUT VOUTH Output OFF VOUTL Output ON BOPN BRPN 0 BRPS BOPS B VOUT as function of the applied B-Field Rev.1.0 Jun. 13,
5 Typical Operating Characteristics Rev.1.0 Jun. 13,
6 Rev.1.0 Jun. 13,
7 Package SOT-23-3 Rev.1.0 Jun. 13,
8 TSOT-23-3 Rev.1.0 Jun. 13,
9 TO-92S Rev.1.0 Jun. 13,
10 DFN DFN2*2-3 Rev.1.0 Jun. 13,
AH8113. AiT Semiconductor Inc. APPLICATION TYPICAL APPLICATION ORDERING INFORMATION
DESCRIPTION The is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages
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Hardware Documentation. Data Sheet. HAL 5xy. Hall-Effect Sensor Family. Edition April 15, 2010 DSH000020_004E
Hardware Documentation Data Sheet HAL 5xy Hall-Effect Sensor Family Edition April 15, 21 DSH2_4E HAL 5xy DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in
HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS
Data Sheet 27621.3A 3161 X This Hall-effect switch is a monolithic integrated circuit designed to operate continuously over extended temperatures to +85 C. The unipolar switching characteristic makes this
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Features - 3.5V to 20V DC operation voltage - Temperature compensation -
Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description
Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable