TLP557 TLP557. Transistor Invertor Inverter For Air Conditionor Power Transistor Base Drive. Pin Configuration (top view) Schmatic.

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1 TOSHIB Photocoupler Gals Ired & Photo IC Transistor Invertor Inverter For ir Conditionor Power Transistor Base Drive Unit in mm The TOSHIB consists of a Gals light emitting diode and a integrated photodetector. This unit is lead DIP package. is suitable for base driving circuit of power transistor module up to 20. External resistor needs to connect between pin and pin. This is for constant current driving. Input threshold current: IF=m(max.) Guaranteed performance temperature range: 0~0 C Supply voltage: (max.) Output current: ±0.(max.) Switching time (tplh / tphl): µs(max.) Isolation voltage: 200rms(min.) UL recognized: UL, file No. E9 TOSHIB 0C Weight: 0.g Pin Configuration (top view) Schmatic I CC (T r ) 2 F 2 + O (Rex) (T r2 ) O2 GND : N.C. 2 : node : Cathode : N.C. : GND : O2 (Output) : O (Rex Terminal) : Truth Table Tr Tr2 Input On On Off LED Off Off On

2 Maximum Ratings LED Detector Characteristic Symbol Rating Unit Forward current 2 m Peak transient forward current (Note ) PT Reverse voltage R Junction temperature (T j ) 2 C Output current (f khz, Duty 0%) Peak output current (P W 0µs, f khz) +0.2 / 0.2 P +2 / 0. Output voltage O Supply voltage O terminal to O 2 terminal (pin pin ) voltage O 2 terminal to O terminal (pin pin ) voltage 2. 2 Power dissipation (Note 2) Po 0. W Junction temperature (T j ) 2 C Total package power dissipation (Note ) P OT 0. W Operating temperature range T opr 0~0 C Storage temperature range T stg ~2 C Lead solder temperature (0 s) T sol 20 C Isolation voltage (C, min., R.H. 0%, Ta=2 C) (Note ) (Note ) Pulse width PW µs, 00pps B S 200 rms (Note 2) P o / C=.mW / C (Ta 0 C) (Note ) P OT / C=.mW / C (Ta 0 C) (Note ) Device considerd a two terminal device: Pins, 2, and shorted together, and pins,, and shorted together

3 Recommended Operating Condition Characteristic Symbol Min. Typ. Max. Unit Input current on (Note ) (ON) 20 m Input voltage off F (OFF) 0 0. Supply voltage I B Drive current I B2 Drive current 2 0. External resistance Rex 2.. Ω O2 (pin pin ) ON voltage 2. ( = 0.) 2. ( = 0.2) Operating temperature Topr C Note : Input signal rise time (fall time) < 0. µs (Rex is for constant current driving) IF(ON) 2 CC CC Rex - F(OFF) O2 GND IO IO

4 Electrical Characteristics (Ta = 0~0 C, unless otherwise specified) Characteristic Symbol Test Condition Min. Typ.* Max. Unit Input forward voltage F = m, Ta = 2 C.. Temperature coefficient of forward voltage F / Ta = m 2.0 m / C Input reverse current I R R =, Ta = 2 C 0 µ Input capacitance C T = 0, f = MHz, Ta = 2 C 20 pf O Output leakage current L =, O = 0, F = µ O 2 Output leakage current O Output current O 2 High level output voltage O 2 Low level output voltage High level supply current Low level supply current Output L H threshold input current Output H L threshold input current 2L OH OL I CCH I CCL LH FHL =, O2 =, = m Test Cir cuit µ 2 = 2. = Rex = 2.Ω = m, Ta = 2 C = =, Rex = 2.Ω = m.. F = 0., Rex = 2.Ω = = 0.2, Ta = 2 C CC = F = 0., Rex = 2.Ω = 0. = 0. (*) Ta = 2 C = 0. =, = m Rex = 2.Ω, Ta = 2 C. 0 =, = m, Rex = 2.Ω =, = m, Rex = 2.Ω.2 =, = 0m Rex = 2.Ω, Ta = 2 C =, = 0m, Rex = 2.Ω 22 =, = 0m, Rex = 2.Ω 2 Rex = 2.Ω = 2. = 0.2 O2 > = Rex = 2.Ω = 0. = 0.2 O2 < 0. = 0. Input current hysterisis I HYS =, Rex = 2.Ω, Ta = 2 C 0.0 m Supply voltage Capacitance (input output) C S S = 0, f = MHz, Ta = 2 C pf Resistance (input output) R S S = 00, Ta = 2, R.H. 0% Ω * ll typical values are at Ta = 2 C (*): Duration of time 00µs m m m

5 Switching Characteristics (Ta = 0~0 C unless otherwise specified) Characteristic Symbol Test Condition Min. Typ.* Max. Unit Propagation delay time, L H tplh µs Propagation delay time, H L tphl =, = m (Note ) Rex = 2.Ω µs Output rise time t r f = khz, Duty = 0% 0.0 µs Output fall time t f 0.0 µs Common mode transient immunity at high level output Common mode transient immunity at low level output C MH C ML Note : Input signal rise time (fall time) < 0. µs * ll typical values are at Ta = 2 C. CM = 00, = m =, Rex = 20Ω R = kω, Ta = 2 C CM = 00, = 0m =, Rex = 20Ω R = kω, Ta = 2 C Test Cir cuit 2000 / µs 2000 / µs Test Circuit : OL Test Circuit : L F F OL L Test Circuit : t plh, t phl, t r, t f Test Circuit 2: 2L 00 90% 0% GND 2L µf Test Circuit : C MH, C ML t r t plh t f t phl Test Circuit : SW Test Circuit : OH - B CM + - 0% CM O2 R O2 90% t r t f 00 SW : ( =m) 0.. SW : B( =0) C MH C HL 0() C ML = t r (µs) 0() C MH = t f (µs) OH C ML (C MH ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state

6 .0 P O Ta f < khz Duty < 0% -2. F / Ta llowable power dissipation PO (W) Forward voltage temperature coefficient F / Ta (m / ) mbient temperature Ta ( ) Forward current IF (m) 00 Ta = 2 F Forward current IF (m) Forward voltage F ()

7 RESTRICTIONS ON PRODUCT USE 009EBC The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIB for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIB or others. TOSHIB is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIB products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIB products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIB products are used within specified operating ranges as set forth in the most recent TOSHIB products specifications. lso, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIB Semiconductor Reliability Handbook etc.. The TOSHIB products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIB products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIB products listed in this document shall be made at the customer s own risk. The products described in this document are subject to the foreign exchange and foreign trade laws. TOSHIB products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. Gas(Gallium rsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically