Non-repetitive peak on-state pulse current 10/1000μs 5/310μs 2/10μs. Non repetitive surge peak on-state current (sinusoidal) 60Hz 0.

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1 DESCRIPTION This device is especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes.negative surges are suppressed by 2 thyristors,their breakdown voltage being referenced to-bt through the gate.this component presents a very low gate triggering current (IGT) in order to reduce the current consumption on printed circuit board during the firing phase. particular attention has been given to the internal wire bonding. The 4 - point configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. FETURES >Dual programmable transient suppressor >Wide negative firing voltage range: GKRM=-117 max >Low dynamic switching voltage: FRM and GK(BD) >Low gate triggering current: I GT=5m max >Peak pulse current: I PP=30 for 10/1000us surge >Holding current: I H=150m min >Wide battery voltage supports >ESD Immunity(HBM): JESD22 Class 3B, 8K >MLS: Lever 1 - unlimited 8 1 SOD-323 PCKGE PIN CONFIGURTIONS BSOLUTE MXIMUM RTINGS Symbol Parameter alue Unit IPP Non-repetitive peak on-state pulse current 10/1000μs 5/310μs 2/10μs ITSM Non repetitive surge peak on-state current (sinusoidal) 60Hz 0.5s 1s 5s 30s 900s DRM Maximum voltage LINE/GROUND -120 GKRM Maximum voltage GTE/LINE -120 T Operating free-air temperature range -40~85 C TJ Junction temperature -40~150 C TL Maximum lead temperature for soldering during 10S 260 C THERML RESISTNCE Symbol Parameter alue Unit ROJ Junction to free air thermal resistance 120 C/W

2 ELECTRICL CHRCTERISTICS (Tamb=25 ) Symbol ID IH BO F FRM GK(BD) IGKS IGT GT CK Parameter Off-state current Holding current Breakover voltage Forward voltage Peak Forward Recovery voltage Gate-cathode impulse breakover voltage Gate reverse current Gate trigger current Gate-cathode trigger voltage Cathode-anode off-state capacitance C/W PRMETERS RELTED TO THE DIODE (Tamb=25 ) Parameter Test conditions Min. Typ. Max. Unit F Forward voltage I F=5, tw=200μs 3 FRM Peak forward recovery voltage 2/10μs, I F=100,Rs=50Ω, di/dt=80/μs 10 PRMETERS RELTED TO THE PROTECTION THYRISTOR (Tamb=25 ) Parameter Test conditions Min. Typ. Max. Unit ID Off-state current D=-120, GK=0 T= J 25 C T= J 85 C u u BO Breakover voltage 2/10μs, I TM=100,Rs=50Ω, di/dt=-80/μs, GG= IH Holding current I T=-1, di/dt=1/ms, GG= m IGKS Gate reverse current GG= GK=-117, K=0 T= J 25 C T= J 85 C u u IGT Gate trigger current I T=3, tp(g) 20μs, GG= m GT Gate trigger voltage I T=3, tp(g) 20μs, GG= CK Cathode-anode off-state capacitance f=1mhz,d=1,i G=0 D= 3 D= pf pf

3 PPLICTIONS Dual SMD PTCs are typically used as the principle over-current protectors in telecom device. >T-1/E-1, ISDN, and xdsl transmission equipment >Telecommunications infrastructure >PBX's and other switches >Set-top box >oip Tip SLIC RT K1 STP61089 K1 K2 K2 B Ring ITU-T K.20/21/45 >Rated for LSSGR 1089 Conditions 2/10 Overshoot oltage Specified Section 1089 TEST Test # oltage waveform (μs) Required peak current() /10μs ,3 10/1000μs 30 Section 1089 TEST Test # 60 Hz power fault time Required peak current() μs ,4,8 1s ,3 5s s /16 1,2 1,4,5 900s 0.73

4 THERML INFORMTION (Tamb=25 ) SOP-8 PCKGE INFORMTION OUTLINEDIMENSIONS -- DIM MILLIMETERS INCHES MIN MX MIN MX B C B- P (0.25mm) M B 4PL D F G 1.27 BSC 0.05 BSC J G D C R x K P R T- K (0.25mm) M T B S S 8PL J F DIM PDLYOUTDIMENSIONS MILLIMETERS INCHES MIN MX MIN MX B B C D C D E

5 TPE ND REEL P0 10 Pitches Cumula ve Tolerance on tape ± 0.2 t D P2 E F W K0 B0 0 P User Direc on of Feed REEL DI. TPE WIDTH SPECIFICTIONS 0 B0 K0 D E F W P0 P2 P tmax 178mm (7 ) 12mm ± ± ± ± ± ± ± ± ± ± NOTES 1. Dimensions are in millimeters. 2. Surface mount product is taped and reeled in accordance with EI Suffix - T7 = 7 Reel - 1,000 pieces per 12mm tape. ORDERING INFORMTION BSE PRT NUMBER LED FREE SUFFIX TPE SUFFIX QTY/REEL REEL SIZE TUBE QTY STP LF -T7 1,000 7 n/a This device is only available in a Lead-Free configura on. Page 2

6 CONTCT US Headquarters Building Caohejing I&E Park Pujiang Minhang Shanghai China Hotline Web h p:// By Telephone General: Sales: Customer Service: Technical Support: By Sales: sales17@semiware.com.cn Customer Service: sales08@semiware.com.cn Technical Support: fae03@semiware.com.cn By Fax General: Sales: COPYRIGHT Semiware This literature is subject to all applicable copyright laws and is not for resale in any manner. SPECIFICTIONS: Semiware reserves the right to change the electrical and or mechanical characteris cs described herein without no ce. DESIGN CHNGES : Semiware reserves the right to discon nue product lines without no ce and that the final judgement concerning selec on and specifica ons is the buyer s and that in furnishing engineering and technical assistance.semiware assumes no responsibility with respect to the selec on or specifica ons of such products.semiware makes no warranty, representation or guarantee regarding the suitability of its products for any par cular purpose, nor does Semiware assume any liability arising out of the applica on or use of any product or circuit and specifically disclaims any and all liability without limita on special,consequen al or incidental damages. LIFE SUPPORT POLICY: Semiware products are not authorized for use in life support systems without wri en consent from the factory. Page 4