Non-repetitive peak on-state pulse current 10/1000μs 5/310μs 2/10μs. Non repetitive surge peak on-state current (sinusoidal) 60Hz 0.

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1 DESCRIPTION This device is especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes.negative surges are suppressed by 2 thyristors,their breakdown voltage being referenced to- BT through the gate. This component presents a very low gate triggering current (IGT) in order to reduce the current consumption on printed circuit board during the firing phase. particular attention has been given to the internal wire bonding. The 4 - point configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. FETURES >Dual programmable transient suppressor >Wide negative firing voltage range: GKRM=-67 max >Low dynamic switching voltage: FRM and GK(BD) >Low gate triggering current: I GT=5m max >Peak pulse current: I PP=30 for 0/000us surge >Holding current: I H=-50m min BSOLUTE MXIMUM RTINGS 8 SOP-8 PCKGE PIN CONFIGURTIONS Symbol Parameter alue Unit IPP Non-repetitive peak on-state pulse current 0/000μs 5/30μs 2/0μs ITSM Non repetitive surge peak on-state current (sinusoidal) 60Hz 0.5s s 5s 30s 900s DRM Maximum voltage LINE/GROUND -70 GKRM Maximum voltage GTE/LINE -67 T Operating free-air temperature range -40~85 C TJ Junction temperature -40~50 C TL Maximum lead temperature for soldering during 0S 260 C THERML RESISTNCE Symbol Parameter alue Unit ROJ Junction to free air thermal resistance 20 C/W Page

2 ELECTRICL CHRCTERISTICS (Tamb=25 ) Symbol ID IH BO F FRM GK(BD) IGKS IGT GT CK Parameter Off-state current Holding current Breakover voltage Forward voltage Peak Forward Recovery voltage Gate-cathode impulse breakover voltage Gate reverse current Gate trigger current Gate-cathode trigger voltage Cathode-anode off-state capacitance C/W PRMETERS RELTED TO THE DIODE (Tamb=25 ) Parameter Test conditions Min. Typ. Max. Unit F Forward voltage I F=5, tw=200μs 3 FRM Peak forward recovery voltage 2/0μs, I F=00,Rs=50Ω, di/dt=80/μs 0 PRMETERS RELTED TO THE PROTECTION THYRISTOR (Tamb=25 ) Parameter Test conditions Min. Typ. Max. Unit ID Off-state current D=-20, GK=0 25 C 85 C u u BO Breakover voltage 2/0μs, I TM=00,Rs=50Ω, di/dt=-80/μs, GG=-00-2 IH Holding current I T=-, di/dt=/ms, GG= m IGKS Gate reverse current GG= GK=-67, K=0 25 C 85 C u u IGT Gate trigger current I T=3, tp(g) 20μs, GG=-00 5 m GT Gate trigger voltage I T=3, tp(g) 20μs, GG= CK Cathode-anode off-state capacitance f=mhz,d=,i G=0 D= 3 D= pf pf Page 2

3 PPLICTIONS Dual SMD PTCs are typically used as the principle over-current protectors in telecom device. >T-/E-, ISDN, and xdsl transmission equipment >Telecommunications infrastructure >PBX's and other switches >Set-top box >oip Tip RT K K SLIC K2 K2 B Ring ITU-T K.20/2/45 >Rated for LSSGR 089 Conditions 2/0 Overshoot oltage Specified Section 089 TEST Test # oltage waveform (μs) Required peak current() /0μs ,3 0/000μs 30 Section 089 TEST Test # 60 Hz power fault time Required peak current() ms ,4,8 s ,3 5s s /6,2,4,5 900s 0.73 Page 3

4 THERML INFORMTION (Tamb=25 ) SOP-8 PCKGE INFORMTION OUTLINE DIMENSIONS -- DIM MILLIMETERS INCHES MIN MX MIN MX B C B- P (0.25mm) M B 4 PL D F G.27 BSC 0.05 BSC J G D C R x K P R T- K (0.25mm) M T B S S 8 PL J F DIM PD LYOUT DIMENSIONS MILLIMETERS INCHES MIN MX MIN MX B B C D C D E Page 4

5 CONTCT US Headquarters Building Caohejing I&E Park Pujiang Minhang Shanghai China Hotline Web h p:// By Telephone General: Sales: Customer Service: Technical Support: By Sales: sales7@semiware.com.cn Customer Service: sales08@semiware.com.cn Technical Support: fae03@semiware.com.cn By Fax General: Sales: COPYRIGHT Semiware This literature is subject to all applicable copyright laws and is not for resale in any manner. SPECIFICTIONS: Semiware reserves the right to change the electrical and or mechanical characteris cs described herein without no ce. DESIGN CHNGES : Semiware reserves the right to discon nue product lines without no ce and that the final judgement concerning selec on and specifica ons is the buyer s and that in furnishing engineering and technical assistance.semiware assumes no responsibility with respect to the selec on or specifica ons of such products.semiware makes no warranty, representation or guarantee regarding the suitability of its products for any par cular purpose, nor does Semiware assume any liability arising out of the applica on or use of any product or circuit and specifically disclaims any and all liability without limita on special,consequen al or incidental damages. LIFE SUPPORT POLICY: Semiware products are not authorized for use in life support systems without wri en consent from the factory. Page 5