Other Electronic Devices

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1 Other Electronic Devices 1

2 Contents Field-Effect Transistors(FETs) - JFETs - MOSFETs Insulate Gate Bipolar Transistors(IGBTs) H-bridge driver and PWM Silicon-Controlled Rectifiers(SCRs) TRIACs Device Selection 2

3 FETs Main Features Field-effect relates to the depletion region formed in the channel of a FET Voltage-controlled devices Voltage between Gate and Source(V GS ) control the current through the device 3

4 FETs Advantages and disadvantages Very high input impedance (on the order of 100 MΩ or more) A high degree of isolation between input and output. Typically produces less noise than a bipolar junction transistor (BJT), and is thus found in noise sensitive electronics such as tuners and low-noise amplifiers for VHF and satellite receivers Preferred device in low-voltage switching application Faster than BJTs Better thermal stability than a BJT Low gain-bandwidth product compared to a BJT Susceptible to overload voltages Vulnerable to electrostatic damage Low current capability 4

5 MOSFETs Features MOSFETs(Metal oxide semiconductor field-effect transistor) Gate of MOSFET insulated from the channel by SiO 2 2 Types: Depletion(D) and Enhancement(E) 1.Depletion Type the transistor requires the Gate-Source voltage, ( V GS ) to switch the device OFF. The depletion mode MOSFET is equivalent to a Normally Closed switch. 2.Enhancement Type the transistor requires a Gate-Source voltage,( V GS ) to switch the device ON. The enhancement mode MOSFET is equivalent to a Normally Open switch. Note. Enhancement MOSFET is more widely used. 5

6 MOSFET Symbol 6

7 MOSFETs Bias 7

8 Enhancement-mode N-Channel MOSFET Amplifier 8

9 Load connection A comparison between an NPN transistor and N-channel MOSFET A comparison between an PNP transistor and P-channel MOSFET 9

10

11 MOSFETs Summary The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain being controlled by the gate voltage. Because of this high input impedance and gain, MOSFETs can be easily damaged by static electricity if not carefully protected or handled. MOSFET s are ideal for use as electronic switches or as common-source amplifiers as their power consumption is very small. Typical applications for metal oxide semiconductor field effect transistors are in Microprocessors, Memories, Calculators and Logic CMOS Gates etc. 11

12 Power Transistor Its characteristic is as normal BJT but with higher power rating. It is a current controlled switching devices. V CE (on-state) is varied depending on current and voltage rating (b) Switching circuit (a) NPN and PNP TO-3 TO-220 TO-92 (c) Characteristic 12

13 Power MOSFETs -Operating as similar as tradition MOSFET but with higher power rating. -High operating frequency i.e. normally >20kHz -Switching ON/OFF by voltage signal; i.e. ±15-20V

14 IGBTs(Insulated Gate Bipolar Transistor) Its operation is similar to BJT but unlike BJT, IGBT requires voltage signal for switching. It can be considered as an advantage combination between BJT and MOSFET. High current capability Medium operating frequency i.e. normally 5-20 khz

15 Power MOSFETs vs IGBTs Power MOSFETs: Higher switching frequency but low current IGBT:Not too high switching frequency but higher current capability On-stage voltage(i.e. conduction or forward) of IGBT is lower. 15

16 H-Bridge Driver Truth Table Reference:

17 H Bridge Driver L293 is an integrated circuit motor driver that can be used for simultaneous, bi-directional control of two small motors. The L293 is limited to 600mA to around 1A. L293D has built in free-wheeling diodes to minimize inductive voltage spikes occurred by switching device and inductive load.

18 H Bridge Driver Note. L298 has no freewheeling diodes.

19 H-Bridge Driver Parts list: Q2, Q4, P-channel MOSFET IRF9630 Q1, Q3, N-channel MOSFET IRF630 Q5, Q6, 2N2222A NPN bipolar transistor. Reference: 19

20 H-Bridge Driver Parts list: Q2, Q4, P-channel MOSFET IRF9630 Q1, Q3, N-channel MOSFET IRF630 Q5, Q6, 2N2222A NPN bipolar transistor. Reference: 20

21 H-Bridge Driver Parts list: Q2, Q4, P-channel MOSFET IRF9630 Q1, Q3, N-channel MOSFET IRF630 Q5, Q6, 2N2222A NPN bipolar transistor. Reference: 21

22 PWM PWM(Pulse Width Modulation) Vary the output to the load Pulse Width V IN t on PWM T Duty Cycle t on t T on ton t off 22

23 PWM DC output AC output 23

24 Deadtime Issue Dead time is required to avoid shoot through of inverter leg. Both switching devices in the same inverter leg cannot ON the same. Deadtime depends on turn-on and turn-off times of the devices and also load current. Deadtime can be generated either by hardware(rc circuit) or via software. S1 Gate Signal S4 T d (dead time) 24

25 SCRs(Silicon-Controlled Rectifiers) A A STUD TO-65 G K G TO-93 TO-5,TO-92 TO-220 A silicon-controlled rectifier (or semiconductor-controlled rectifier) is a 4-layer solid state device that controls current flow. SCRs are used in power switching converter, phase control, dimmer, chopper, battery chargers, and inverter circuits. Complementary latch: when SCRs stay on, stay on all by itself and when it stays off, it stays off by itself. Note. It's called a complementary latch since it's usually made from a pair of transistors that are said to compliment one another. K 25 Capsule (Disk) DO-xxx

26 SCR waveform V load Small forward voltage (on-state voltage) R load AC 220 Vrms 50 Hz Gate Triggering Circuit G A K V AK Firing angle (delay angle) Conduction angle i.e. ( )=45 o GATE CURRENT (Triggering signal) I GT 26

27 Output Voltage V load V SCR Output voltage can be calculated by integrating the output equation(average area in one period) V load 1 2 2V 2 RMS 2V RMS sin( t) d( t) (1 cos ) 27

28 TRIACs A2 A2 G = G A1 A1 A TRIAC, or TRIode for Alternating Current is an electronic component approximately equivalent to two silicon-controlled rectifiers (SCRs) joined in inverse parallel. Bidirectional switch can conduct current in either direction when it is triggered. It can be triggered by either a positive or a negative voltage being applied to its gate.(very suitable to switch ac circuit).once triggered, it continues to conduct until the current through it drops below holding current, naturally at the end of a half-cycle of the main supply. TRIACs are used in ac system applications such as light dimmers, speed controls of electric fans and electric motors. 28

29 TRIAC Waveforms 29

30 TRIAC Applications 30

31 Applications Dimmer Circuit Heater Control Circuit 31

32 Device Selection Following are common consideration when selecting devices. - Power Rating i.e. maximum current and voltage - Switching Frequency( How fast the circuit requires determine control dynamic and switching loss) - Gate Drive Requirement i.e. simple or bipolar - Breakdown Voltage (circuit connection) - Power Loss(when efficiency is critical) i.e. on-stage voltage or resistance 32

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