MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, POSITIVE, VOLTAGE REGULATORS, MONOLITHIC SILICON

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1 INCH-POUND MIL-M-38510/107D 24 February 2004 SUPERSEDING MIL-M-38510/107C 29 May 1989 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, POSITIVE, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense. Reactivated after 24 February 2004 and may be used for either new or existing design acquisition. The requirement for acquiring the product herein shall consist of this specification sheet and MIL-PRF SCOPE 1.1 Scope. This specification covers the detail requirements for fixed output, monolithic silicon, positive voltage regulators. Two product assurance classes and a choice of case outlines and lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M have been superseded by MIL-PRF-38535, (see 6.3). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein Device types. The device types are as shown in the following: Device type Circuit Case outline letter 01 Voltage regulator, +5 volts at 1.5 A (maximum) X or Y (see table I) 02 Voltage regulator, +5 volts at 0.5 A X 03 Voltage regulator, +12 volts at 0.5 A X 04 Voltage regulator, +15 volts at 0.5 A X 05 Voltage regulator, +24 volts at 0.5 A X 06 Voltage regulator, +5 volts at 1.0 A Y 07 Voltage regulator, +12 volts at 1.0 A Y 08 Voltage regulator, +15 volts at 1.0 A Y 09 Voltage regulator, +24 volts at 1.0 A Y Device class. The device class is the product assurance level as defined in MIL-PRF Case outlines. The case outlines should be designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 3 Can Y See figure 2 2 Flange mount Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH , or ed to linear@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at AMSC N/A FSC 5962

2 1.3 Absolute maximum ratings. Input voltage: Device types 01, 02, 03, 04, 06, 07, and V dc Device types 05 and V dc Lead temperature (soldering, 60 seconds) C Storage temperature range C to +150 C Junction temperature (T J ) C 1/ 1.4 Recommended operating conditions. Input voltage range: Device types V dc to +25 V dc Device types 02 and V dc to +25 V dc Device types 03 and V dc to +32 V dc Device types 04 and V dc to +35 V dc Device types 05 and V dc to +38 V dc Ambient operating temperature range (T A ) C to +125 C 1.5 Power and thermal characteristics. T A = T S Case Maximum θ JA Maximum P D without heat sink Maximum θ JC Maximum P D with heat sink Maximum θ C-S 2/ 125 C 3/ X 140 C/W 0.18 W 40 C/W 0.5 W 10 C/W Y 35 C/W 0.71 W 4 C/W 5.6 W 0.5 C/W 25 C X 140 C/W 0.89 W 40 C/W 2.50 W 10 C/W Y 35 C/W 3.60 W 4 C/W W 0.5 C/W -55 C X 140 C/W 1.50 W 40 C/W 4.00 W 10 C/W Y 35 C/W 5.80 W 4 C/W W 0.5 C/W 1/ The device is protected by a thermal shutdown circuit which is designed to turn off the output transistor whenever the device junction temperature is in excess of 150 C. 2/ This value represents the maximum allowable thermal impedance of a heat sink to remain within the above thermal ratings. 3/ Based on T J = 150 C and specified values of θ JC and θ JA. 2

3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents Specifications, standards, and handbooks. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD Test Method Standard for Microelectronics. - Interface Standard Electronic Component Case Outlines. (Copies of these documents are available online at or or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA ) 2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.4). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF and herein Case outlines. The case outlines shall be as specified in and on figures 1 and Block diagram and terminal connections. The block diagrams and terminal connections shall be as specified on figures 3 and Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the preparing activity (DSCC-VA) upon request. 3

4 3.4 Lead material and finish. Lead material and finish shall be in accordance with MIL-PRF or as follows: Type X Nickel percent Manganese percent, maximum Silicon percent, maximum Carbon percent, maximum Chromium percent, maximum Cobalt percent, maximum Phosphorous percent, maximum Sulfur percent, maximum Aluminum percent maximum Iron... Remainder Type Y Copper core percent, maximum Clad with Alloy percent, maximum Lead finish. The lead finish shall be in accordance with MIL-PRF (see 6.6). 3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in table I and apply over the full operating ambient temperature range of 55 C to +125 C Stability. If the device is located an appreciable distance from the power supply filter, a large (1.0 µf) bypass capacitor should be connected as close to the device V CC input as possible to suppress oscillation. A 0.1 µf bypass capacitor is recommended on the device output. Output current oscillations are likely to occur in the current limit operating mode with high input voltages (V IN > 18 V dc) Test limit. The test limits specified in tables I and III apply only for the stated test conditions (example, 2 percent duty cycle), which essentially keep the junction temperature constant. In most applications the junction temperature will greatly exceed the 25 C ambient or sink temperature; thus devices may not perform within the 25 C specified limits. 3.6 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). 4

5 TABLE I. Electrical performance characteristics for device type 01. Test Symbol Conditions -55 C T A +125 C see figure 11 and 3.5, unless otherwise specified Limits Unit Input voltage Load current Other Min Max I L for case X I L for case Y Output voltage V OUT V IN = 7 V -5 ma -5 ma V V IN = 7 V, 8 V 1/ -0.5 A -1.5 A V IN = 9 V -0.5 A V IN = 18 V -1.5 A V IN = 25 V -5 ma -5 ma V IN = 25 V -100 ma -1.0 A Line regulation V RLINE 7 V V IN 25 V -5 ma T A = +25 C -55 C T A +125 C Load regulation V RLOAD V IN = 10 V I MAX I L -5 ma -55 C T A I MAX = -0.5 A I MAX = -1.5 A +125 C mv mv Standby current drain I SCD 7 V V IN 25 V -5 ma ma Standby current drain change (versus line voltage) Standby current drain change (versus load (line) (load) 7 V V IN 25 V -5 ma ma V IN = 10 V I MAX I L -5 ma ma current) I MAX = -0.5 A I MAX = -1.5 A Output short 2/ I OS V IN = 35 V Case X A circuit current Case Y

6 TABLE I. Electrical performance characteristics for device type 01 Continued. Test Symbol Conditions -55 C T A +125 C see figure 11 and 3.5, unless otherwise specified Limits Unit Input voltage Load current Other Min Max Minimum start-up input voltage Ripple rejection 3/ V IN / V OUT I L for case X I L for case Y V START Case X R L = 25 Ω ±5% V IN = 10 V, e i = 1 Vrms, at f = 2,400 Hz Case Y R L = 5 Ω ±5% See figure ma -350 ma T A = +25 C, see figure 7 Output noise voltage 3/ N O V IN = 10 V -50 ma -100 ma T A = +25 C, see figure 8 Line transient response V OUT / V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 10 V, V PULSE = 3.0 V V IN = 10 V -5 ma T A = +25 C, see figure 9-50 ma, I L = -200 ma -100 ma, I L = -400 ma T A = +25 C, see figure 10 V IN = 7 V -5 ma T A = +125 C, and 55 C 9.0 V 60 db 125 µvrms 15 mv/v 2.0 mv/ma mv/ C 6

7 TABLE I. Electrical performance characteristics for device type 02. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Unit Input voltage Load current Other Min Max Output voltage V OUT V IN = 8 V I L = -5 ma, -0.5 A V V IN = 20 V I L = -5 ma, -0.5 A V IN = 35 V I L = -5 ma, -50 ma V IN = 10 V I L = -5 ma T A = 150 C Line regulation V RLINE 8 V V IN 35 V I L = -50 ma mv 8 V V IN 25 V I L = -350 ma Load regulation V RLOAD V IN = 10 V -500 ma I L -5 ma mv V IN = 35 V -50 ma I L -5 ma Standby current drain I SCD V IN = 10 V I L = -5 ma ma V IN = 35 V I L = -5 ma Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current (line) (load) 8 V V IN 35 V I L = -5 ma ma V IN = 10 V -500 ma I L -5 ma ma I OS V IN = 10 V A V IN = 25 V V IN = 35 V Overload current 6/ I OL VIN = 8 V, forced V OUT = V See figure A 7

8 TABLE I. Electrical performance characteristics for device type 02 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Unit Input voltage Load current Other Min Max Ripple rejection 3/ V IN / V OUT V IN = 10 V, e i = 1 V rms at f = 2,400 Hz I L = -125 ma See figure 7, T A = +25 C Output noise voltage 3/ N O V IN = 10 V I L = -50 ma See figure 8, T A = +25 C Line transient response V OUT / V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 10 V, V PULSE = 3.0 V V IN = 10 V I L = -5 ma See figure 9, T A = +25 C I L = -50 ma, I L = -200 ma See figure 10, T A = +25 C V IN = 10 V I L = -5 ma T A = +125 C and 55 C 60 db 125 µv rms 30 mv/v 2.5 mv/ma mv/ C 8

9 TABLE I. Electrical performance characteristics for device type 03. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Unit Input voltage Load current Other Min Max Output voltage V OUT V IN = 15 V I L = -5 ma, -0.5 A V V IN = 27 V I L = -5 ma, -0.5 A V IN = 35 V I L = -5 ma, -50 ma V IN = 17 V I L = -5 ma T A = 150 C Line regulation V RLINE 15 V V IN 35 V I L = -50 ma mv 15 V V IN 32 V I L = -350 ma Load regulation V RLOAD V IN = 17 V -500 ma I L -5 ma mv V IN = 35 V -50 ma I L -5 ma Standby current drain I SCD V IN = 17 V I L = -5 ma ma V IN = 35 V I L = -5 ma Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current (line) (load) 15 V V IN 35 V I L = -5 ma ma V IN = 17 V -500 ma I L -5 ma ma I OS V IN = 17 V A V IN = 32 V V IN = 35 V Overload current 6/ I OL V IN = 15 V, forced V OUT = V See figure A 9

10 TABLE I. Electrical performance characteristics for device type 03 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Unit Input voltage Load current Other Min Max Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response V IN = 17 V, e i = 1 Vrms, at f = 2,400 Hz I L = -125 ma See figure 7, T A = +25 C N O V IN = 17 V I L = -50 ma See figure 8, T A = +25 C V OUT / V IN V IN = 17 V, V PULSE = 3.0 V I L = -5 ma See figure 9, T A = +25 C 55 db 250 µvrms 30 mv/v Load transient response V OUT / I L V IN = 17 V I L = -50 ma, I L = -200 ma See figure 10, T A = +25 C 2.5 mv/ma Average temperature coefficient of output voltage V OUT / T V IN = 17 V I L = -5 ma T A = +125 C and 55 C mv/ C 10

11 TABLE I. Electrical performance characteristics for device type 04. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Output voltage V OUT V IN = 18.5 V I L = -5 ma, -0.5 A V V IN = 30 V I L = -5 ma, -0.5 A V IN = 35 V I L = -5 ma, -50 ma V IN = 20 V I L = -5 ma T A = 150 C Line regulation V RLINE 18.5 V V IN 35 V I L = -350 ma mv Load regulation V RLOAD V IN = 20 V -500 ma I L -5 ma mv V IN = 35 V -50 ma I L -5 ma Standby current drain I SCD V IN = 20 V I L = -5 ma ma V IN = 35 V I L = -5 ma Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current (line) (load) 18.5 V V IN 35 V I L = -5 ma ma V IN = 20 V -500 ma I L -5 ma ma I OS V IN = 20 V A V IN = 35 V Overload current 6/ I OL V IN = 18.5 V, forced V OUT = V See figure A 11

12 TABLE I. Electrical performance characteristics for device 04 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response Load transient response Average temperature coefficient of output voltage V IN = 20 V, e i = 1 Vrms, at f = 2,400 Hz I L = -125 ma See figure 7, T A = 25 C V NO V IN = 20 V I L = -50 ma See figure 8, T A = 25 C V OUT / V IN V OUT / I L V OUT / T V IN = 20 V, V PULSE = 3.0 V V IN = 20 V I L = -5 ma See figure 9, T A = 25 C I L = -50 ma, I L = -200 ma See figure 10, T A = 25 C V IN = 20 V I L = -5 ma T A = +125 C and 55 C 53 db 300 µvrms 30 mv/v 2.5 mv/ma mv/ C 12

13 TABLE I. Electrical performance characteristics for device 05. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Output voltage V OUT V IN = 28 V I L = -5 ma, -0.5 A V V IN = 38 V I L = -5 ma, -0.5 A V IN = 40 V I L = -5 ma, -50 ma V IN = 30 V I L = -5 ma T A = 150 C Line regulation V RLINE 28 V V IN 40 V I L = -50 ma mv 28 V V IN 38 V I L = -350 ma Load regulation V RLOAD V IN = 30 V -500 ma I L -5 ma mv V IN = 40 V -50 ma I L -5 ma Standby current drain I SCD V IN = 30 V I L = -5 ma ma V IN = 40 V I L = -5 ma Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current (line) (load) 28 V V IN 35 V I L = -5 ma ma V IN = 30 V -500 ma I L -5 ma ma I OS V IN = 30 V A V IN = 38 V V IN = 40 V Overload current 6/ I OL V IN = 28 V, forced V OUT = V See figure A 13

14 TABLE I. Electrical performance characteristics for device type 05 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response V OUT / V IN = 30 V, e i = 1 Vrms, at f = 2,400 Hz I L = -125 ma See figure 7, T A = 25 C N O V IN = 30 V I L = -50 ma See figure 8, T A = 25 C V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 30 V, V PULSE = 3.0 V V IN = 30 V I L = -5 ma See figure 9, T A = 25 C I L = -50 ma, I L = -200 ma See figure 10, T A = 25 C V IN = 30 V I L = -5 ma T A = +125 C and 55 C 50 db 500 µvrms 30 mv/v 2.5 mv/ma mv/ C 14

15 TABLE I. Electrical performance characteristics for device type 06. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Output voltage V OUT V IN = 8 V I L = -5 ma, -1.0 A V V IN = 20 V I L = -5 ma, -1.0 A V IN = 35 V I L = -5 ma, -0.1 A V IN = 10 V I L = -5 ma T A = 150 C Line regulation V RLINE 8 V V IN 35 V I L = -0.1 A mv 8 V V IN 25 V I L = -0.5 A Load regulation V RLOAD V IN = 10 V -1.0 A I L -5 ma mv V IN = 35 V -0.1 A I L -5 ma Standby current drain I SCD V IN = 10 V I L = -5 ma ma V IN = 35 V I L = -5 ma Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current (line) (load) 8 V V IN 35 V I L = -5 ma ma V IN = 10 V -1.0 A I L -5 ma ma I OS V IN = 10 V A V IN = 25 V V IN = 35 V Overload current 6/ I OL V IN = 8 V, forced V OUT = V See figure A 15

16 TABLE I. Electrical performance characteristics for device type 06 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response V OUT / V IN = 10 V, e i = 1 Vrms, at f = 2,400 Hz I L = -350 ma See figure 7, T A = 25 C N O V IN = 10 V I L = -0.1 A See figure 8, T A = 25 C V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 10 V, V PULSE = 3.0 V V IN = 10 V I L = -5 ma See figure 9, T A = 25 C I L = -100 ma, I L = -400 ma See figure 10, T A = 25 C V IN = 10 V I L = -5 ma T A = +125 C and 55 C 60 db 125 µvrms 30 mv/v 2.5 mv/ma mv/ C 16

17 TABLE I. Electrical performance characteristics for device type 07. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Output voltage V OUT V IN = 15 V I L = -5 ma, -1.0 A V V IN = 27 V I L = -5 ma, -1.0 A V IN = 35 V I L = -5 ma, -0.1 A V IN = 17 V I L = -5 ma T A = 150 C Line regulation V RLINE 15 V V IN 35 V I L = -0.1 A mv 15 V V IN 32 V I L = -0.5 A Load regulation V RLOAD V IN = 17 V -1.0 A I L -5 ma mv V IN = 35 V -0.1 A I L -5 ma Standby current drain Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current I SCD V IN = 17 V I L = -5 ma ma (line) (load) V IN = 35 V I L = -5 ma V V IN 35 V I L = -5 ma ma V IN = 17 V -1.0 A I L -5 ma ma I OS V IN = 17 V A V IN = 32 V V IN = 35 V Overload current 6/ I OL V IN = 15 V, forced V OUT = V See figure A 17

18 TABLE I. Electrical performance characteristics for device type 07 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response V OUT / V IN = 17 V, e i = 1 Vrms, at f = 2,400 Hz I L = -350 ma See figure 7, T A = 25 C N O V IN = 17 V I L = -0.1 A See figure 8, T A = 25 C V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 17 V, V PULSE = 3.0 V V IN = 17 V I L = -5 ma See figure 9, T A = 25 C I L = -100 ma, I L = -400 ma See figure 10, T A = 25 C V IN = 17 V I L = -5 ma T A = +125 C and 55 C 55 db 250 µvrms 30 mv/v 2.5 mv/ma mv/ C 18

19 TABLE I. Electrical performance characteristics for device type 08. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Output voltage V OUT V IN = 18.5 V I L = -5 ma, -1.0 A V V IN = 30 V I L = -5 ma, -1.0 A V IN = 35 V I L = -5 ma, -0.1 A V IN = 20 V I L = -5 ma T A = 150 C Line regulation V RLINE 18.5 V V IN 35 V I L = -0.5 A mv Load regulation V RLOAD V IN = 20 V -1.0 A I L -5 ma mv V IN = 35 V -0.1 A I L -5 ma Standby current drain Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current I SCD V IN = 20 V I L = -5 ma ma (line) (load) V IN = 35 V I L = -5 ma V V IN 35 V I L = -5 ma ma V IN = 20 V -1.0 A I L -5 ma ma I OS V IN = 20 V A V IN = 35 V Overload current 6/ I OL V IN = 18.5 V, forced V OUT = V See figure A 19

20 TABLE I. Electrical performance characteristics for device type 08 Continued. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response V OUT / V IN = 20 V, e i = 1 Vrms, at f = 2,400 Hz I L = -350 ma See figure 7, T A = 25 C N O V IN = 20 V I L = -0.1 A See figure 8, T A = 25 C V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 20 V, V PULSE = 3.0 V V IN = 20 V I L = -5 ma See figure 9, T A = 25 C I L = -100 ma, I L = -400 ma See figure 10, T A = 25 C V IN = 20 V I L = -5 ma T A = +125 C and 55 C 53 db 300 µvrms 30 mv/v 2.5 mv/ma mv/ C 20

21 TABLE I. Electrical performance characteristics for device type 09. 4/ Test Symbol Conditions -55 C T A +125 C see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Output voltage V OUT V IN = 28 V I L = -5 ma, -1.0 A V V IN = 38 V I L = -5 ma, -1.0 A V IN = 40 V I L = -5 ma, -0.1 A V IN = 30 V I L = -5 ma T A = 150 C Line regulation V RLINE 28 V V IN 40 V I L = -0.1 A mv 28 V V IN 38 V I L = -0.5 A Load regulation V RLOAD V IN = 30 V -1.0 A I L -5 ma mv V IN = 40 V -0.1 A I L -5 ma Standby current drain Standby current drain change (versus line voltage) Standby current drain change (versus load current) Output short 2/ 5/ circuit current I SCD V IN = 30 V I L = -5 ma ma (line) (load) V IN = 40 V I L = -5 ma V V IN 40 V I L = -5 ma ma V IN = 30 V -1.0 A I L -5 ma ma I OS V IN = 30 V A V IN = 35 V Overload current 6/ I OL V IN = 28 V, forced V OUT = V See figure A 21

22 TABLE I. Electrical performance characteristics for device type 09 Continued. 4/ Test Symbol Conditions -55 C T A +125 C, see figure 5 and 3.5, unless otherwise specified Limits Input voltage Load current Other Min Max Unit Ripple rejection 3/ V IN / V OUT Output noise 3/ voltage Line transient response V OUT / V IN = 30 V, e i = 1 Vrms, at f = 2,400 Hz I L = -350 ma See figure 7, T A = 25 C N O V IN = 30 V I L = -0.1 A See figure 8, T A = 25 C V IN Load transient response V OUT / Average temperature coefficient of output voltage I L V OUT / T V IN = 30 V, V PULSE = 3.0 V V IN = 30 V I L = -5 ma See figure 9, T A = 25 C I L = -100 ma, I L = -400 ma See figure 10, T A = 25 C V IN = 30 V I L = -5 ma T A = +125 C and 55 C 50 db 500 µvrms 30 mv/v 2.5 mv/ma mv/ C 1/ V OUT test at V IN = 8 V is conducted at T A = -55 C only. 2/ One second maximum test duration. 3/ The meter for e i and e o shall have a minimum bandwidth from 10 Hz to 10 khz and shall measure true rms voltages. 4/ For device types 02 through 09, all tests performed at T A = +125 C may, at the manufacturer s option, be performed at T A = +150 C. Specifications for T A = +125 C shall then apply at T A = +150 C. 5/ A 1 µf capacitor may be added to dampen oscillations during the I OS test for device types 02 through 09. 6/ The overload current test checks the device current limiting, and it is not a measure of the output peak current. 22

23 4. VERIFICATION. 4.1 Sampling and inspection. Sampling and inspection procedures should be in accordance with MIL-PRF or as modified in the device manufacturer s Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. The following additional criteria shall apply: a. For class S and B devices, an additional burn-in screen shall be performed to test the operation of the thermal shutdown circuit. This screen shall be performed after serialization (3.1.8 of method 5004 of MIL-STD-883) and before interim electrical parameters (pre burn-in, of method 5004 of MIL-STD-883). The requirements of of method 1015 of MIL-STD-883 shall apply to this screen except the devices need not be tested in an oven. b. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. c. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer. d. Additional screening for space level product shall be as specified in MIL-PRF e. Constant acceleration (method 2001 of MIL-STD-883); test condition B shall be used for case Y. 4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF and herein for groups A, B, C, and D inspections (see through 4.4.4) Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 5, 6, 9, 10, and 11 shall be omitted in table II herein Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF and as follows: a. End point electrical parameters shall be as specified in table II herein. b. When using the method 5005 option, constant acceleration for class S (method 2001 of MIL-STD-883); test condition B shall be used for case Y Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF and as follows: a. End point electrical parameters shall be as specified in table II herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD

24 TABLE II. Electrical test requirements. MIL-PRF Subgroups (see table III) test requirements Class S devices Class B devices Interim electrical parameters 1 1 Final electrical test parameters 1/ 1,2,3,4 1,2,3,4 Group A test requirements 1,2,3,4,7,8 1,2,3,4,7,8 Group B electrical test parameters when using the method 5005 QCI option Group C electrical parameters Group D end point electrical parameters 1,2,3, and table IV delta limits 1,2,3, and table IV delta limits 1,2,3 1 N/A 1 and table IV delta limits 1/ PDA applies to subgroup Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF and as follows: a. End point electrical parameters shall be as specified in table II herein. b. Constant acceleration (method 2001 of MIL-STD-883); test condition B shall be used for case Y. 4.5 Methods of inspection. Methods of inspection shall be as specified and as follows Voltage and current. All voltage values given, except the input offset voltage (or differential voltage) are referenced to the external zero reference level of the supply voltage. Currents values given are for conventional current and are positive when flowing into the referenced terminal Burn-in and life test cool down procedures. When devices are measured at +25 C following application of the steadystate life or burn-in test condition, they shall be cooled to within +10 C of their power stable condition prior to removal of the bias. 24

25 Dimensions Symbol Inches Millimeters Notes Min Max Min Max A φb φb φd φd e.200 T.P T.P 5 e T.P T.P 5 F k k k L L L α 45 T.P 45 T.P 5 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only and are based upon 1.00 inch = 25.4 mm. 3. (All leads) φb applies between L 1 and L 2. φb 1 applies between L 2 and.500 (12.70 mm) from the reference plane. Diameter is uncontrolled in L 1 and beyond.500 (12.70 mm) from the reference plane. 4. Measured from the maximum diameter of the product. 5. Leads having a maximum diameter.019 (0.48 mm) measured in gauging plane.054 (1.37 mm) (0.03 mm) (0.00 mm) below the base plane of the product shall be within.007 (0.18 mm) of their true position relative to a maximum width tab. 6. The product may be measured by direct methods or by gauge. FIGURE 1. Case outline X. 25

26 Dimensions Symbol Inches Millimeters Notes Min Max Min Max A A φb ,7 φd e e e F φh ,6 L L ,4 R R NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. (Two leads) φb applies between L 1 and.500 (12.70 mm) from the seating plane. Diameter is uncontrolled in L 1 and beyond.500 (12.70 mm) from the seating plane. 4. Two leads. 5. Two holes. 6. Two holes located at true position within diameter.010 (0.25 mm). 7. Leads having a maximum diameter.043 (1.09 mm) measured in gauging plane.054 (1.37 mm) (0.03 mm) (0.00 mm) below the seating plane shall be located at true position within diameter.014 (0.36 mm). 8. The mounting surface of the header shall be flat to convex within.003 (0.08 mm) inside a.930 (23.62 mm) diameter circle on the center of the header and flat to convex within.006 (0.15 mm) overall. FIGURE 2. Case outline Y. 26

27 FIGURE 3. Terminal connections. 27

28 NOTE: For device type 01, R 18 is replaced by a diode and R A = 0. FIGURE 4. Block diagram. 28

29 FIGURE 5. Test circuit for static tests for device types 02, 03, 04, 05, 06, 07, 08, and

30 NOTES: 1. Output terminal must utilize a Kelvin connection. 2. I OS test duration: 1 second maximum. S 1 : Position 2 for I OS test. Position 1 for all other tests. 3. The pulse generator has the following characteristics: a. Pulse amplitude = -10 I L volts. b. Pulse width = 1.0 ms c. Duty cycle = 2 percent (maximum). Load current is determined by the voltage across the 1 Ω resistor. Measurements shall be made 0.5 ms after the start of the pulse. 4. An alternate drive circuit for 2N6294 transistor may be used to develop the proper load current through the 1 Ω resistor. 5. Use position 2 of S 2 for I SCD, tests only. 6. Thermal shutdown output voltage test is conducted without a heat sink at an ambient temperature of T A = +150 C. 7. V IN(LOW) and V IN(HIGH) per table III. 8. V RLINE = V B V A. 9. The output voltage is sampled at the specified intervals. Strobe pulse with is 100 µs maximum. 10. I L minimum and I L maximum in accordance with table III 11. V RLOAD = V D V C and V RLOAD = V E V C. 12. Device types R L kω 2.4 kω 3 kω 4.8 k Ω 1 kω 2.4 kω 3 kω 4.8 kω 13. Alternate point for applying load circuit directly with automatic test equipment (place S 3 in position 2). 14. A 1 µf capacitor may be added to dampen oscillations during the I OS test for device types 02 through 09. FIGURE 5. Test circuit for static tests for device types 02, 03, 04, 05, 06, 07, 08, 09 Continued. 30

31 Device types V IN 8 V 15 V 18.5 V 28 V 8 V 15 V 18.5 V 28 V V OUT V V V V V V V V R 110 Ω 300 Ω 390 Ω 680 Ω 110 Ω 300 Ω 390 Ω 680 Ω NOTE: 1. Q1 = 2N6187 or equivalent. Q2 = 2N4033 or equivalent. Q3 = 2N3108 or equivalent. CR1 = 1N3873 or equivalent. CR2 = 1N3873 or equivalent. 2. The pulse, V PULSE, has the following characteristics: Pulse width = 100 µs Pulse repetition rate = 200 Hz. Pulse amplitude = 5 V. 3. Adjust V X for a forced output voltage condition during application of V PULSE. 4. Kelvin connections shall be made directly to the 0.5 Ω resistor. The overload current is I OL = 2 ( V I ) amperes. 5. The overload current test checks the device limiting, and is not a measure of the output peak current. FIGURE 6. Overload current test circuit for device types 02, 03, 04, 05, 06, 07, 08, 09 31

32 Device table Device types V IN 10 V 10 V 17 V 20 V 30 V 10 V 17 V 20 V 30 V R L 40.2 Ω * 40.2 Ω 95.3 Ω 121 Ω 191 Ω 14.3 Ω 34 Ω 43.2 Ω 68.1 Ω R L shall be type RER 70 or equivalent. * This value shall be used for case X. For case Y use R L = 14.3 Ω. NOTES: 1. e i = 1 Vrms at f = 2400 Hz (measured at the input terminals of device under test (DUT). Ripple rejection (db) = 20 log (e irms / e orms ). 2. c i shall be minimum value to prevent oscillations of the device under test. The maximum value of c i shall be 0.4 µf. 3. The meter for e i and e o shall have a minimum bandwidth from 10 Hz to 10 khz and shall measure true rms voltages. FIGURE 7. Ripple rejection test circuit for all device types. 32

33 Device table Device types V IN 10 V 10 V 17 V 20 V 30 V 10 V 17 V 20 V 30 V R L 100 Ω * 100 Ω 237 Ω 301 Ω 475 Ω 49.9 Ω 121 Ω 150 Ω 237 Ω R L shall be type RER 70 or equivalent. * This value shall be used for case X. For case Y use R L = 49.9 Ω. NOTES: 1. The meter for measuring e orms shall have a minimum bandwidth from 10 Hz to 10 khz and shall measure true rms voltages. 2. N o = e orms. FIGURE 8. Noise test circuit for all devices. 33

34 Device types 01, 02, 06 03, 07 04, 08 05, 09 V IN 10 V 17 V 20 V 30 V * R L 1.0 kω 2.4 kω 3.0 kω 4.8 kω * R L shall be type RER 70 or equivalent. NOTES: 1. The pulse characteristics shall be established under load while the DUT is operating. t TLH = t THL = 5.0 µs V IN = V IN V t pl = 25 µs at 3 percent duty cycle. 2. V OUT = 90 mv maximum (this guarantees the specification limit of 30 mv/v). 3. c i shall be minimum value to prevent device oscillations. FIGURE 9. Line transient response test circuit for all device types. 34

35 Device types V IN 10 V 10 V 17 V 20 V 30 V 10 V 17 V 20 V 30 V *R L 100 Ω ** 100 Ω 243 Ω 301 Ω 487 Ω 49.9 Ω 121 Ω 150 Ω 243 Ω * Load resistor R L shall be type RER 70 or equivalent. ** This value shall be used for case X. For case Y use R L = 49.9 Ω. NOTES: 1. The pulse characteristics shall be established under load while the DUT is operating. t THL = t TLH = 1.0 µs. t p2 = 25 µs at 3% duty cycle. V PULSE = 0.2 V for device types 01 (case X), 02, 03, 04, and 05. V PULSE = 0.4 V for device types 01 (case Y), 06, 07, 08, and V OUT = 400 mv maximum for device type 01 (case X). V OUT = 800 mv maximum for device type 01 (case Y). V OUT = 500 mv maximum for device types V OUT = 1000 mv maximum for device types (These values guarantee the specified limits for load transient response). 3. Oscilloscope minimum bandwidth shall be 5 MHz. FIGURE 10. Load transient response test circuit for all devices. 35

36 Parameters V OUT V RLINE Test I L (ma) Switch positions Measure Measured parameters Units S1 S2 S3 Value Units equation 1,14, E 1 V V OUT = E 1 V 2,15,28 3,16,29 4,17,30 See notes 3 and 7 See note 3 See note E 2 V V OUT = E 2 V E 3 V V OUT = E 3 V E 4 V V OUT = E 4 V 5,18, E 5 V V OUT = E 5 V 6,19,32 See note E 6 V V OUT = E 6 V 7,20, E 7 V V RLINE = E 8 - E 7 mv E 8 V 1,000 V RLOAD 8,21, E 9 V V RLOAD = E 10 E 9 mv See notes 3 and E 10 V 1,000 FIGURE 11 Test circuit for static and dynamic test for device type

37 Parameter Test I L (ma) Switch positions Measure Measured parameters Units S1 S2 S3 Value Units equation I SCD 9, 22, I 1 ma I SCD = I 1 ma I 2 ma I SCD = I 2 (line) 10, 23, V 1 V = IO(V 2 V 1 ) (line) ma V 2 V (load) I OS 11, 24, V 3 V 12, 25,38 See notes 3 and 7 See note V 4 V = IO (V 4 V 3 ) (load) I L A I OS = I L A ma NOTES: 1. R = 2 Ω ±1 percent for case X; R = 1 Ω ±1 percent for case Y. 2. The pulse generator has the following characteristics: Variable amplitude, pulse width = 50 µs and PRR = 200 Hz. Pulse amplitude is adjusted to set the load current by monitoring the voltage drop across R. 3. I L = -0.5 A for case X C T A +125 C; V OUT / T = (V OUT at +25 C) (V OUT at +125 C) x C T A +25 C; V OUT / T = (V OUT at -55 C) (V OUT at +25 C) x One second maximum test duration. 7. I L = 1.5 A for case Y. 8. I L = -100 ma for case X; I L = -1.0 A for case Y. FIGURE 11. Test circuit for static and dynamic test for device type 01 Continued. 37

38 NOTES: 1. R = 25 Ω ±5 percent for case X and 5 Ω ±5 percent for case Y. 2. Voltage source shall be a variable power supply capable of producing the following input waveform. Device shall turn on at V IN 9 V and shall remain on when the input is returned to 7 V. FIGURE 12. Start-up input voltage test circuit for device type

39 TABLE III. Group A inspection for all device type 01. Subgroup Symbol Test Conditions figure 11, unless otherwise specified no. Input voltage Load current Min Max I L for case X I L for case Y Limits Unit Notes 1 V OUT 1 V IN = 7 V -5 ma -5 ma V T A = +25 C 2 V IN = 7 V -0.5 A -1.5 A 3 V IN = 9 V -0.5 A 4 V IN = 18 V -1.5 A 5 V IN = 25 V -5 ma -5 ma 6 V IN = 25 V -100 ma -1.0 A V RLINE 7 7 V V IN 25 V -5 ma mv V RLOAD 8 V IN = 10 V I MAX I L -5 ma mv I MAX = -0.5 A I MAX = -1.5 A I SCD 9 7 V V IN 25 V -5 ma ma (line) (load) I OS V V IN 25 V -5 ma ma V IN = 10 V I MAX I L -5 ma ma I MAX = I MAX = -0.5 A -1.5 A V IN = 35 V A Case X 1/ Case Y 1/ V START 13 Case X (R L = 25 Ω ±5%) Case Y (R L = 5 Ω ±5%) 9.0 V See figure 12 39

40 TABLE III. Group A inspection for all device type 01 Continued. Subgroup Symbol Test Conditions figure 11, unless otherwise specified no. Input voltage Load current Min Max I L for case X I L for case Y Limits Unit Notes 2 V OUT 14 V IN = 7 V -5 ma -5 ma V T A = +125 C 15 V IN = 7 V -0.5 A -1.5 A 16 V IN = 9 V -0.5 A 17 V IN = 18 V -1.5 A 18 V IN = 25 V -5 ma -5 ma 19 V IN = 25 V -100 ma -1.0 A V RLINE 20 7 V V IN 25 V -5 ma mv V RLOAD 21 V IN = 10 V I MAX I L -5 ma mv I MAX = -0.5 A I MAX = -1.5 A I SCD 22 7 V V IN 25 V -5 ma ma (line) (load) I OS V V IN 25 V -5 ma ma V IN = 10 V I MAX I L -5 ma ma I MAX = I MAX = -0.5 A -1.5 A V IN = 35 V A Case X 1/ Case Y 1/ V START 26 Case X (R L = 25 Ω ±5%) Case Y (R L = 5 Ω ±5%) 9.0 V See figure 12 40

41 TABLE III. Group A inspection for all device type 01 Continued. Subgroup Symbol Test Conditions figure 11, unless otherwise specified no. Input voltage Load current Min Max I L for case X I L for case Y Limits Unit Notes 3 V OUT 27 V IN = 7 V -5 ma -5 ma V T A = -55 C 28 V IN = 7 V -0.5 A -1.5 A 29 V IN = 9 V -0.5 A 30 V IN = 18 V -1.5 A 31 V IN = 25 V -5 ma -5 ma 32 V IN = 25 V -100 ma -1.0 A V RLINE 33 7 V V IN 25 V -5 ma mv V RLOAD 34 V IN = 10 V I MAX I L -5 ma mv I MAX = -0.5 A I MAX = -1.5 A I SCD 35 7 V V IN 25 V -5 ma ma (line) (load) I OS V V IN 25 V -5 ma ma V IN = 10 V I MAX I L -5 ma ma I MAX = I MAX = -0.5 A -1.5 A V IN = 35 V A Case X 1/ Case Y 1/ V START 39 Case X (R L = 25 Ω ±5%) Case Y (R L = 5 Ω ±5%) 9.0 V See figure 12 41

42 TABLE III. Group A inspection for all device type 01 Continued. Subgroup Symbol Test Conditions figure 11, unless otherwise specified no. Input voltage Load current Min Max I L for case X I L for case Y Limits Unit Notes 4 V IN / 40 V IN = 10 V, -125 ma -350 ma 60 db See 2/ T A = +25 C V OUT e i = 1 V rms at f = 2,400 Hz figure 10 7 N o 41 V IN = 10 V -50 ma -100 ma 125 µv rms See 2/ figure 8 T A = +25 C V OUT / V IN V OUT / I L 42 V IN = 10 V, V pulse = 3.0 V -5 ma 15 mv/v See figure 9 43 V IN = 10 V -50 ma -100 ma 2.0 mv/ma See figure 10 8 T A = +125 C 8 T A = -55 C V OUT / T V OUT / T I L = -200 ma I L = -400 ma 44 V IN = 7 V -5 ma mv/ C V OUT / T = (V 1 V 14 ) x V IN = 7 V -5 ma mv/ C V OUT / T = (V 1 V 27 ) x

43 TABLE III. Group A inspection for all device type 02. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 1 V OUT 1 V IN = 8 V I L = -5 ma V T A = +25 C 2 I L = -500 ma 3 V IN = 20 V I L = -5 ma 4 I L = -500 ma 5 V IN = 35 V I L = -5 ma 6 I L = -50 ma V RLINE 7 8 V V IN 35 V I L = -50 ma mv See figure V V IN 25 V I L = -350 ma waveforms V RLOAD 9 V IN = 10 V -500 ma I L -5 ma mv See figure 5 10 V IN = 35 V -50 ma I L -5 ma waveforms I SCD 11 V IN = 10 V I L = -5 ma ma 12 V IN = 35 V I L = -5 ma (line) (load) I OS V V IN 35 V I L = -5 ma ma = I 12 I 13 V IN = 10 V -500 ma I L -5 ma ma = I 11 I 14 V IN = 10 V A 1/ 4/ V IN = 25 V V IN = 35 V I OL 18 V IN = 8 V; forced V OUT = V A See 5/ figure 6 43

44 TABLE III. Group A inspection for all device type 02 Continued. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 2 V OUT 19 V IN = 8 V I L = -5 ma V T A = +125 C 20 I L = -500 ma 21 V IN = 20 V I L = -5 ma 22 I L = -500 ma 23 V IN = 35 V I L = -5 ma 24 I L = -50 ma V RLINE 25 8 V V IN 35 V I L = -50 ma mv See figure V V IN 25 V I L = -350 ma waveforms V RLOAD 27 V IN = 10 V -500 ma I L -5 ma mv See figure 5 28 V IN = 35 V -50 ma I L -5 ma waveforms I SCD 29 V IN = 10 V I L = -5 ma ma 30 V IN = 35 V I L = -5 ma (line) (load) I OS V V IN 35 V I L = -5 ma ma = I 30 I 31 V IN = 10 V -500 ma I L -5 ma ma = I 29 I 32 V IN = 10 V A 1/ 4/ 34 V IN = 25 V V IN = 35 V T A = +150 C I OL V OUT V IN = 8 V; forced A See 5/ figure 6 V OUT = V V IN = 10 V I L = -5 ma V 44

45 TABLE III. Group A inspection for all device type 02 Continued. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 3 V OUT 38 V IN = 8 V I L = -5 ma V T A = -55 C 39 I L = -500 ma 40 V IN = 20 V I L = -5 ma 41 I L = -500 ma 42 V IN = 35 V I L = -5 ma 43 I L = -50 ma V RLINE 44 8 V V IN 35 V I L = -50 ma mv See figure 5 waveforms 45 8 V V IN 25 V I L = -350 ma V RLOAD 46 V IN = 10 V -500 ma I L -5 ma mv See figure 5 waveforms 47 V IN = 35 V -50 ma I L -5 ma I SCD 48 V IN = 10 V I L = -5 ma ma 49 V IN = 35 V I L = -5 ma (line) (load) I OS V V IN 35 V I L = -5 ma ma = I 49 I 50 V IN = 10 V -500 ma I L -5 ma ma = I 48 I 51 V IN = 10 V A 1/ 4/ V IN = 25 V V IN = 35 V I OL 55 V IN = 8 V; forced V OUT = V A See 5/ figure 6 45

46 TABLE III. Group A inspection for all device type 02 Continued. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 4 V IN / 56 V IN = 10 V, I L = -125 ma 60 db See 2/ T A = 25 C V OUT e i = 1 V rms at f = 2400 Hz figure 7 7 N O 57 V IN = 10 V I L = -50 ma 125 µv rms See 2/ figure 8 T A = 25 C V OUT / 58 V IN = 10 V, I L = -5 ma 30 mv/v See figure 9 V IN V OUT / V PULSE = 3.0 V 59 V IN = 10 V I L = -50 ma 2.5 mv/ma See figure 10 I L I L = -200 ma V OUT 60 V IN = 10 V I L = -5 ma V See figure 5 8 V OUT 61 V IN = 10 V I L = -5 ma V See figure 5 T A = +125 C V OUT / T 62 V IN = 10 V I L = -5 ma mv/ C See figure 5, V OUT / T = (V 60 - V 61 ) x 10 8 V OUT 63 V IN = 10 V I L = -5 ma V See figure 5 T A = -55 C V OUT / T 64 V IN = 10 V I L = -5 ma mv/ C See figure 5, V OUT / T = (V 60 - V 63 ) x

47 TABLE III. Group A inspection for all device type 03. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 1 V OUT 1 V IN = 15 V I L = -5 ma V T A = +25 C 2 I L = -0.5 A 3 V IN = 27 V I L = -5 ma 4 I L = -0.5 A 5 V IN = 35 V I L = -5 ma 6 I L = -50 ma V RLINE 7 15 V V IN 35 V I L = -50 ma mv See figure V V IN 32 V I L = -350 ma waveforms V RLOAD 9 V IN = 17 V -500 ma I L -5 ma mv See figure 5 10 V IN = 35 V -50 ma I L -5 ma waveforms I SCD 11 V IN = 17 V I L = -5 ma ma 12 V IN = 35 V I L = -5 ma I SCD (line) I SCD (load) I OS V V IN 35 V I L = -5 ma ma = I 12 I 13 V IN = 17 V -500 ma I L -5 ma ma = I 11 I 14 V IN = 17 V A 1/ 4/ V IN = 32 V V IN = 35 V I OL 18 V IN = 15 V; forced V OUT = V A See 5/ figure 6 47

48 TABLE III. Group A inspection for all device type 03 Continued. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 2 V OUT 19 V IN = 15 V I L =- 5 ma V T A = +125 C 20 I L = -0.5 A 21 V IN = 27 V I L = -5 ma 22 I L = -0.5 A 23 V IN = 35 V I L = -5 ma 24 I L = -50 ma V RLINE V V IN 35 V I L = -50 ma mv See figure V V IN 32 V I L = -350 ma waveforms V RLOAD 27 V IN = 17 V -500 ma I L -5 ma mv See figure 5 28 V IN = 35 V -50 ma I L -5 ma waveforms I SCD 29 V IN = 17 V I L = -5 ma ma 30 V IN = 35 V I L = -5 ma (line) (load) I OS V V IN 35 V I L = -5 ma ma = I 30 I 31 V IN = 17 V -500 ma I L -5 ma ma = I 29 I 32 V IN = 17 V A 1/ 4/ 34 V IN = 32 V V IN = 35 V T A = +150 C I OL V OUT V IN = 15 V; forced A See 5/ figure 6 V OUT = V V IN = 17 V I L = -5 ma V 48

49 TABLE III. Group A inspection for all device type 03 Continued. 3/ Subgroup Symbol Test Conditions Limits Unit Notes no. see figure 5, unless otherwise specified Min Max Input voltage Load current 3 V OUT 38 V IN = 15 V I L = -5 ma V T A = -55 C 39 I L = -0.5 A 40 V IN = 27 V I L = -5 ma 41 I L = -0.5 A 42 V IN = 35 V I L = -5 ma 43 I L = -50 ma V RLINE V V IN 35 V I L = -50 ma mv See figure 5 waveforms V V IN 32 V I L = -350 ma V RLOAD 46 V IN = 17 V -500 ma I L -5 ma mv See figure 5 waveforms 47 V IN = 35 V -50 ma I L -5 ma I SCD 48 V IN = 17 V I L = -5 ma ma 49 V IN = 35 V I L = -5 ma (line) (load) I OS V V IN 35 V I L = -5 ma ma = I 49 I 50 V IN = 17 V -500 ma I L -5 ma ma = I 48 I 51 V IN = 17 V A 1/ 4/ V IN = 32 V V IN = 35 V I OL 55 V IN = 15 V; forced V OUT = V A See 5/ figure 6 49