CMOS LOGIC Inside the CMOS inverter, no I D current flows through transistors when input is logic 1 or logic 0, because

Size: px
Start display at page:

Download "CMOS LOGIC Inside the CMOS inverter, no I D current flows through transistors when input is logic 1 or logic 0, because"

Transcription

1 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross CMO LOGIC Inside the CMO inverter, no I current flows through transistors when input is logic 1 or logic 0, because the NMO transistor is cutoff for logic 0 (0 V) input the PMO transistor is cutoff for logic 1 ( ) input current through the turned on transistor has nowhere to go if next stage consists of transistor gates 1 2 V IN EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross V IN = 0 V V IN = NMO transistor cutoff (since V G(N) = V IN = 0 V) acts as open circuit PMO transistor on (V G(P) = V IN = - ) but I (P) = 0 => V (P) = 0 V I (N) (= -I (P) ) PMO transistor cutoff (V G(P) = V IN = 0 V) acts as open circuit NMO transistor on (V G(N) = V IN = ) but I (N) = 0 => V (N) = 0 V I (N) (= -I (P) ) X X

2 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross EY MOEL OR LOGIC NLYI There is a simpler model for the behavior of transistors in a CMO logic circuit, which applies when the input to the logic circuit is fully logic 0 or fully logic 1. G V G = 0 V Each transistor will be in one of these two situations! V G = (for NMO) V G = - (for PMO) G We can use the model to quickly determine the logical operation of a CMO circuit (but we cannot use it to find circuit currents or voltages that will occur for mid-range input voltages). EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross REVIIT CMO INVERTER WITH IMPLE LOGIC MOEL ill in the switch positions below V IN = 0 V V IN =

3 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross CMO NN PMO 1 PMO 2 NMO 1 NMO 2 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NN circuit: =

4 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NN circuit: = = = EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross CMO NOR PMO 1 PMO 2 NMO 1 NMO 2

5 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NOR circuit: = EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NOR circuit: = = =

6 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross PULL-UP N PULL-OWN EVICE In our logic circuits, the NMO transistor sources are connected to ground, and the PMO sources are connected to. Notice that when NMO transistors are on (when V GN = ) V N is shorted by switch, helping connect output to ground. The NMO transistor functions as a pull-down device; when active, it brings the output to 0 V. When PMO transistors are on (when V GP = - ) V P is shorted by switch, helping connect output to. The PMO transistor functions as a pull-up device; when active, it brings the output to. EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross LIMITTION O WITCH MOEL Preview of next class: PMO 1 PMO 2 NMO 1 NMO 2 In reality, the pull-up devices must have some V voltage and current flow to bring the output high since natural capacitance must be charged. imilarly, the pull-down devices must have some V voltage and current flow to bring the output to ground since natural capacitance must be discharged. This is GTE ELY.

7 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross LIMITTION O WITCH MOEL uppose one needed to fully analyze the circuit for intermediate input voltages. Requires many equations, many unknowns. PMO 1 = PMO 2 = V TH(N) + ε NMO 1 NMO 2 ut, we can at least guess the modes. EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross ssume around 5 V, V TH(N) around 1 V, V TH(P) around -1 V, ε around 0.5 V. = PMO 1 PMO 2 = V TH(N) + ε NMO 1 NMO 2 PMO 1 cutoff NMO 1 barely on (V (N2) 0) => saturation NMO 2 fully on, but NMO 1 limits I to small value => triode PMO 2 on, but NMO 1 and PMO 1 make I small => triode

EE 330 Lecture 5. Improved Device Models Propagation Delay in Logic Circuits

EE 330 Lecture 5. Improved Device Models Propagation Delay in Logic Circuits EE 330 Lecture 5 Improved evice Models Propagation elay in Logic Circuits Review from Last Time MO Transistor Qualitative iscussion of n-channel Operation rain rain ulk Cross-ectional View n-channel MOFET

More information

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN Name: EXAM #3 Closed book, closed notes. Calculators may be used for numeric computations only. All work is to be your own - show your work for maximum partial credit. Data: Use the following data in all

More information

Shorthand Notation for NMOS and PMOS Transistors

Shorthand Notation for NMOS and PMOS Transistors Shorthand Notation for NMOS and PMOS Transistors Terminal Voltages Mode of operation depends on V g, V d, V s V gs = V g V s V gd = V g V d V ds = V d V s = V gs - V gd Source and drain are symmetric diffusion

More information

ECE Digital Logic Lecture 2. Digital Design Circuit Types: Combinational vs. Sequential

ECE Digital Logic Lecture 2. Digital Design Circuit Types: Combinational vs. Sequential ECE 74 - Digital Logic Lecture Circuit Types: Combinational vs. equential Lecture Transistors, witches, CMO Basic Logic Gates Boolean Equations Truth Table: w/o time or previous values Circuit Components:

More information

ECE380 Digital Logic. Logic values as voltage levels

ECE380 Digital Logic. Logic values as voltage levels ECE380 Digital Logic Implementation Technology: NMOS and PMOS Transistors, CMOS logic gates Dr. D. J. Jackson Lecture 13-1 Logic values as voltage levels V ss is the minimum voltage that can exist in the

More information

EE 330 Lecture 5. Other Logic Styles. Improved Device Models. complex logic gates pass transistor logic

EE 330 Lecture 5. Other Logic Styles. Improved Device Models. complex logic gates pass transistor logic EE 330 Lecture 5 Other Logic Styles complex logic gates pass transistor logic Improved evice Models Review from Last Time MOS Transistor Qualitative iscussion of n-channel Operation Source Gate rain rain

More information

EEC 118 Lecture #12: Dynamic Logic

EEC 118 Lecture #12: Dynamic Logic EEC 118 Lecture #12: Dynamic Logic Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Outline Today: Alternative MOS Logic Styles Dynamic MOS Logic Circuits: Rabaey

More information

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation

More information

5. CMOS Gates: DC and Transient Behavior

5. CMOS Gates: DC and Transient Behavior 5. CMOS Gates: DC and Transient Behavior Jacob Abraham Department of Electrical and Computer Engineering The University of Texas at Austin VLSI Design Fall 2017 September 18, 2017 ECE Department, University

More information

EEC 118 Lecture #11: CMOS Design Guidelines Alternative Static Logic Families

EEC 118 Lecture #11: CMOS Design Guidelines Alternative Static Logic Families EEC 118 Lecture #11: CMOS Design Guidelines Alternative Static Logic Families Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Homework 5 this week Lab

More information

EE 330 Lecture 5. Other Logic Styles Improved Device Models Stick Diagrams

EE 330 Lecture 5. Other Logic Styles Improved Device Models Stick Diagrams EE 330 Lecture 5 Other Logic Styles Improved evice Models Stick iagrams Review from Last Time MOS Transistor Qualitative iscussion of n-channel Operation ulk Source Gate rain rain Gate n-channel MOSFET

More information

ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits

ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits Faculty of Engineering ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits CMOS Technology Complementary MOS, or CMOS, needs both PMOS and NMOS FET devices for their logic gates to be realized

More information

Combinational Logic Gates in CMOS

Combinational Logic Gates in CMOS Combinational Logic Gates in CMOS References: dapted from: Digital Integrated Circuits: Design Perspective, J. Rabaey UC Principles of CMOS VLSI Design: Systems Perspective, 2nd Ed., N. H. E. Weste and

More information

Lecture # 16 Logic with a State Dependent Device. Logic Gates How are they built in practice?

Lecture # 16 Logic with a State Dependent Device. Logic Gates How are they built in practice? EECS 42 Introduction to Digital Electronics Andrew R. Neureuther These viewgraphs will be handed out in class 1/21/ Lecture # 16 Logic with a State Dependent Device S&O pp. 9-9, 4-6 (read for graphs and

More information

8. Combinational MOS Logic Circuits

8. Combinational MOS Logic Circuits 8. Combinational MOS Introduction Combinational logic circuits, or gates, witch perform Boolean operations on multiple input variables and determine the output as Boolean functions of the inputs, are the

More information

ECE/CoE 0132: FETs and Gates

ECE/CoE 0132: FETs and Gates ECE/CoE 0132: FETs and Gates Kartik Mohanram September 6, 2017 1 Physical properties of gates Over the next 2 lectures, we will discuss some of the physical characteristics of integrated circuits. We will

More information

I. Digital Integrated Circuits - Logic Concepts

I. Digital Integrated Circuits - Logic Concepts I. Digital Integrated Circuits - Logic Concepts. Logic Fundamentals: binary mathematics: only operate on and (oolean algebra) simplest function -- inversion = symbol for the inverter INPUT OUTPUT EECS

More information

Digital Integrated CircuitDesign

Digital Integrated CircuitDesign Digital Integrated CircuitDesign Lecture 11 BiCMOS PMOS rray Q1 NMOS rray Y NMOS rray Q2 dib brishamifar EE Department IUST Contents Introduction BiCMOS Devices BiCMOS Inverters BiCMOS Gates BiCMOS Drivers

More information

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. October 25, 2005

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. October 25, 2005 6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 13-1 Lecture 13 - Digital Circuits (II) MOS Inverter Circuits October 25, 25 Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS

More information

EECE2412 Final Exam. with Solutions

EECE2412 Final Exam. with Solutions EECE2412 Final Exam with Solutions Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University Fall Semester 2010 My file 11480/exams/final General Instructions:

More information

Design cycle for MEMS

Design cycle for MEMS Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

More information

Show the details of the derivation for Eq. (6.33) for the PMOS device.

Show the details of the derivation for Eq. (6.33) for the PMOS device. Problem 6.11 Rahul Mhatre Show the details of the derivation for Eq. (6.33) for the PMOS device. Since the device is a PMOS MOSFET, source and drain are p+ regions and the substrate is an nwell. Therefore,

More information

INF4420. Outline. Switched capacitor circuits. Switched capacitor introduction. MOSFET as an analog switch 1 / 26 2 / 26.

INF4420. Outline. Switched capacitor circuits. Switched capacitor introduction. MOSFET as an analog switch 1 / 26 2 / 26. INF4420 Switched capacitor circuits Spring 2012 Jørgen Andreas Michaelsen (jorgenam@ifi.uil.no) 1 / 26 Outline Switched capacitor introduction MOSFET as an analog switch 2 / 26 Introduction Discrete time

More information

12/01/2009. Practice with past exams

12/01/2009. Practice with past exams EE40 Final Exam Review Prof. Nathan Cheung 12/01/2009 Practice with past exams http://hkn.eecs.berkeley.edu/exam/list/?examcourse=ee%2040 Slide 1 Overview of Course Circuit components: R, C, L, sources

More information

EE 42/100 Lecture 23: CMOS Transistors and Logic Gates. Rev A 4/15/2012 (10:39 AM) Prof. Ali M. Niknejad

EE 42/100 Lecture 23: CMOS Transistors and Logic Gates. Rev A 4/15/2012 (10:39 AM) Prof. Ali M. Niknejad A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 23 p. 1/16 EE 42/100 Lecture 23: CMOS Transistors and Logic Gates ELECTRONICS Rev A 4/15/2012 (10:39 AM) Prof. Ali M. Niknejad University

More information

ECE520 VLSI Design. Lecture 5: Basic CMOS Inverter. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 5: Basic CMOS Inverter. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 5: Basic CMOS Inverter Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture

More information

ECE520 VLSI Design. Lecture 11: Combinational Static Logic. Prof. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 11: Combinational Static Logic. Prof. Payman Zarkesh-Ha EE520 VLSI esign Lecture 11: ombinational Static Logic Prof. Payman Zarkesh-Ha Office: EE ldg. 230 Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 eview of Last

More information

Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013

Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types

More information

Module 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits

Module 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits Module 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits Objectives In this lecture you will learn the following Ratioed Logic Pass Transistor Logic Dynamic Logic Circuits

More information

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 22, 2001

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 22, 2001 6.12 - Microelectronic Devices and Circuits - Spring 21 Lecture 13-1 Lecture 13 - Digital Circuits (II) MOS Inverter Circuits March 22, 21 Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS

More information

Designing Information Devices and Systems II Fall 2017 Note 1

Designing Information Devices and Systems II Fall 2017 Note 1 EECS 16B Designing Information Devices and Systems II Fall 2017 Note 1 1 Digital Information Processing Electrical circuits manipulate voltages (V ) and currents (I) in order to: 1. Process information

More information

ECE 471/571 The CMOS Inverter Lecture-6. Gurjeet Singh

ECE 471/571 The CMOS Inverter Lecture-6. Gurjeet Singh ECE 471/571 The CMOS Inverter Lecture-6 Gurjeet Singh NMOS-to-PMOS ratio,pmos are made β times larger than NMOS Sizing Inverters for Performance Conclusions: Intrinsic delay tp0 is independent of sizing

More information

HW#3 Solution. Dr. Parker. Spring 2014

HW#3 Solution. Dr. Parker. Spring 2014 HW#3 olution r. Parker pring 2014 Assume for the problems below that V dd = 1.8 V, V tp0 is -.7 V. and V tn0 is.7 V. V tpbodyeffect is -.9 V. and V tnbodyeffect is.9 V. Assume ß n (k n )= 219.4 W/L µ A(microamps)/V

More information

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation

More information

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number

More information

ECE 340 Lecture 40 : MOSFET I

ECE 340 Lecture 40 : MOSFET I ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do

More information

CMOS VLSI Design (A3425)

CMOS VLSI Design (A3425) CMOS VLSI Design (A3425) Unit III Static Logic Gates Introduction A static logic gate is one that has a well defined output once the inputs are stabilized and the switching transients have decayed away.

More information

Digital logic families

Digital logic families Digital logic families Digital logic families Digital integrated circuits are classified not only by their complexity or logical operation, but also by the specific circuit technology to which they belong.

More information

Lecture 7: Components of Phase Locked Loop (PLL)

Lecture 7: Components of Phase Locked Loop (PLL) Lecture 7: Components of Phase Locked Loop (PLL) CSCE 6933/5933 Instructor: Saraju P. Mohanty, Ph. D. NOTE: The figures, text etc included in slides are borrowed from various books, websites, authors pages,

More information

EE5320: Analog IC Design

EE5320: Analog IC Design EE5320: Analog IC Design Handout 3: MOSFETs Saurabh Saxena & Qadeer Khan Indian Institute of Technology Madras Copyright 2018 by EE6:Integrated Circuits & Systems roup @ IIT Madras Overview Transistors

More information

Digital Integrated Circuits - Logic Families (Part II)

Digital Integrated Circuits - Logic Families (Part II) Digital Integrated Circuits - Logic Families (Part II) MOSFET Logic Circuits MOSFETs are unipolar devices. They are simple, small in size, inexpensive to fabricate and consume less power. MOS fabrication

More information

ECE 3110: Engineering Electronics II Fall Final Exam. Dec. 16, 8:00-10:00am. Name: (78 points total)

ECE 3110: Engineering Electronics II Fall Final Exam. Dec. 16, 8:00-10:00am. Name: (78 points total) Final Exam Dec. 16, 8:00-10:00am Name: (78 points total) Problem 1: Consider the emitter follower in Fig. 7, which is being used as an output stage. For Q 1, assume β = and initally assume that V BE =

More information

Zero Steady State Current Power-on-Reset Circuit with Brown-Out Detector

Zero Steady State Current Power-on-Reset Circuit with Brown-Out Detector Zero Steady State Current Power-on-Reset Circuit with Brown-Out Detector Sanjay Kumar Wadhwa 1, G.K. Siddhartha 2, Anand Gaurav 3 Freescale Semiconductor India Pvt. Ltd. 1 sanjay.wadhwa@freescale.com,

More information

Practice 6: CMOS Digital Logic

Practice 6: CMOS Digital Logic Practice 6: CMOS Digital Logic Digital Electronic Circuits Semester A 2012 The MOSFET as a Switch The MOSFET as a Switch We can look at the MOSFET as a Switch, passing the data between the diffusions when

More information

Lecture 4. The CMOS Inverter. DC Transfer Curve: Load line. DC Operation: Voltage Transfer Characteristic. Noise in Digital Integrated Circuits

Lecture 4. The CMOS Inverter. DC Transfer Curve: Load line. DC Operation: Voltage Transfer Characteristic. Noise in Digital Integrated Circuits Noise in Digital Integrated Circuits Lecture 4 The CMOS Inverter i(t) v(t) V DD Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail:

More information

CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES

CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES 41 In this chapter, performance characteristics of a two input NAND gate using existing subthreshold leakage

More information

VLSI Design. Static CMOS Logic

VLSI Design. Static CMOS Logic VLSI esign Static MOS Logic [dapted from Rabaey s igital Integrated ircuits, 2002, J. Rabaey et al.] EE4121 Static MOS Logic.1 ZLM Review: MOS Process at a Glance efine active areas Etch and fill trenches

More information

EE434 ASIC & Digital Systems

EE434 ASIC & Digital Systems EE434 ASIC & Digital Systems Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Spring 2015 Dae Hyun Kim daehyun@eecs.wsu.edu 1 Lecture 4 More on CMOS Gates Ref: Textbook chapter

More information

DIGITAL ELECTRONICS. A2: logic circuits parameters. Politecnico di Torino - ICT school

DIGITAL ELECTRONICS. A2: logic circuits parameters. Politecnico di Torino - ICT school Politecnico di Torino - ICT school A2: logic circuits parameters DIGITAL ELECTRONICS A INTRODUCTION A.2 Logic circuits parameters» Static parameters» Interfacing and compatibility» Output stages» Dynamic

More information

Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B

Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied

More information

Lecture 9 Transistors

Lecture 9 Transistors Lecture 9 Transistors Physics Transistor/transistor logic CMOS logic CA 1947 http://www.extremetech.com/extreme/164301-graphenetransistors-based-on-negative-resistance-could-spell-theend-of-silicon-and-semiconductors

More information

Topic 6. CMOS Static & Dynamic Logic Gates. Static CMOS Circuit. NMOS Transistors in Series/Parallel Connection

Topic 6. CMOS Static & Dynamic Logic Gates. Static CMOS Circuit. NMOS Transistors in Series/Parallel Connection NMOS Transistors in Series/Parallel Connection Topic 6 CMOS Static & Dynamic Logic Gates Peter Cheung Department of Electrical & Electronic Engineering Imperial College London Transistors can be thought

More information

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III Lecture 3 Biasing and Loading Single Stage FET Amplifiers The Building Blocks of Analog Circuits III In this lecture you will learn: Current biasing of circuits Current sources and sinks for CS, CG, and

More information

MOS IC Amplifiers. Token Ring LAN JSSC 12/89

MOS IC Amplifiers. Token Ring LAN JSSC 12/89 MO IC Amplifiers MOFETs are inferior to BJTs for analog design in terms of quality per silicon area But MO is the technology of choice for digital applications Therefore, most analog portions of mixed-signal

More information

CPE/EE 427, CPE 527 VLSI Design I CMOS Inverter. CMOS Inverter: A First Look

CPE/EE 427, CPE 527 VLSI Design I CMOS Inverter. CMOS Inverter: A First Look CPE/EE 427, CPE 527 VLSI Design I CMOS Inverter Department of Electrical and Computer Engineering University of Alabama in Huntsville Aleksandar Milenkovic CMOS Inverter: A First Look C L 9/11/26 VLSI

More information

ECE315 / ECE515 Lecture 7 Date:

ECE315 / ECE515 Lecture 7 Date: Lecture 7 ate: 01.09.2016 CG Amplifier Examples Biasing in MOS Amplifier Circuits Common Gate (CG) Amplifier CG Amplifier- nput is applied at the Source and the output is sensed at the rain. The Gate terminal

More information

Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer

Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer The objective of this lab is to become familiar with methods to measure the dc current-voltage (IV) behavior of diodes

More information

Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD?

Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD? Improved Inverter: Current-Source Pull-Up MOS Inverter with Current-Source Pull-Up What else could be connected between the drain and? Replace resistor with current source I SUP roc i D v IN v OUT Find

More information

ELEC 350L Electronics I Laboratory Fall 2012

ELEC 350L Electronics I Laboratory Fall 2012 ELEC 350L Electronics I Laboratory Fall 2012 Lab #9: NMOS and CMOS Inverter Circuits Introduction The inverter, or NOT gate, is the fundamental building block of most digital devices. The circuits used

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND

More information

1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6)

1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6) CSE 493/593 Test 2 Fall 2011 Solution 1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6) Decreasing of W to make the gate slower,

More information

Chapter 13: Introduction to Switched- Capacitor Circuits

Chapter 13: Introduction to Switched- Capacitor Circuits Chapter 13: Introduction to Switched- Capacitor Circuits 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4 Switched-Capacitor Integrator 13.5 Switched-Capacitor

More information

A gate sizing and transistor fingering strategy for

A gate sizing and transistor fingering strategy for LETTER IEICE Electronics Express, Vol.9, No.19, 1550 1555 A gate sizing and transistor fingering strategy for subthreshold CMOS circuits Morteza Nabavi a) and Maitham Shams b) Department of Electronics,

More information

Basic digital logic functions and gates

Basic digital logic functions and gates Basic digital logic functions and gates Digital logic functions and gates are the main blocks behind digital logic design. s and 1s combine to produce values that are generated by basic gates such as NOT,

More information

ECEN325: Electronics Summer 2018

ECEN325: Electronics Summer 2018 ECEN325: Electronics Summer 2018 Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements & Reading H5 due today Exam 2 on

More information

Lecture 27: MOSFET Circuits at DC.

Lecture 27: MOSFET Circuits at DC. Whites, EE 30 Lecture 7 Page 1 of 8 Lecture 7: MOSFET Circuits at C. We will illustrate the C analysis of MOSFET circuits through a number of examples in this lecture. Example N7.1 (similar to text Example

More information

LECTURE 14. (Guest Lecturer: Prof. Tsu-Jae King) Last Lecture: Today:

LECTURE 14. (Guest Lecturer: Prof. Tsu-Jae King) Last Lecture: Today: LECTURE 14 (uest Lecturer: Prof. Tsu-Jae King) Last Lecture: emiconductors, oping PN Junction iodes iode tructure and I vs. V characteristics iode Circuits Today: N-Channel MOFET tructure The MOFET as

More information

CMOS Inverter & Ring Oscillator

CMOS Inverter & Ring Oscillator CMOS Inverter & Ring Oscillator Theory: In this Lab we will implement a CMOS inverter and then use it as a building block for a Ring Oscillator. MOSfets (Metal Oxide Semiconductor Field Effect Transistors)

More information

EE 40. Midterm 3. November 14, 2002

EE 40. Midterm 3. November 14, 2002 Lab TA: Dan Bart Nir Konrad Yu Ching EE 40 Midterm 3 November 14, 2002 PLEASE WRITE YOUR NAME ON EACH ATTACHED PAGE PLEASE SHOW YOUR WORK TO RECEIVE PARTIAL CREDIT Problem 1: 10 Points Possible Problem

More information

Digital circuits. Bởi: Sy Hien Dinh

Digital circuits. Bởi: Sy Hien Dinh Digital circuits Bởi: Sy Hien Dinh This module presents the basic concepts of MOSFET digital logic circuits. We will examine NMOS logic circuits, which contain only n-channel transistors, and complementary

More information

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic. Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition

More information

The CMOS Inverter. Lecture 3a Static properties (VTC and noise margins)

The CMOS Inverter. Lecture 3a Static properties (VTC and noise margins) The CMOS Inverter Lecture 3a Static properties (VTC and noise margins) Why so much about inverters? The current that any CMOS logic gate can deliver or sink can be calculated from equivalent inverter!

More information

Lecture Integrated circuits era

Lecture Integrated circuits era Lecture 1 1.1 Integrated circuits era Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell laboratories. In 1961, first IC was introduced. Levels of Integration:-

More information

Lecture 4. MOS transistor theory

Lecture 4. MOS transistor theory Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage

More information

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away

More information

To make the gm constant, the two parameters can be made constant at first: '

To make the gm constant, the two parameters can be made constant at first: ' EE 501 Lab 9 Constant gm circuit for rail to rail input common mode voltage Due: November 20, 2014 Objective: To understand the constant gm input circuit (appendix 1). To implement the circuit with low

More information

EE100Su08 Lecture #16 (August 1 st 2008)

EE100Su08 Lecture #16 (August 1 st 2008) EESu8 Lecture #6 (ugust st 28) OUTLINE Project next week: Pick up kits in your first lab section, work on the project in your first lab section, at home etc. and wrap up in the second lab section. USE

More information

Introduction to Computer Engineering EECS 203 dickrp/eecs203/ Grading scheme. Review.

Introduction to Computer Engineering EECS 203  dickrp/eecs203/ Grading scheme. Review. Introduction to Computer Engineering EECS 203 http://ziyang.eecs.northwestern.edu/ dickrp/eecs203/ Grading scheme Instructor: Robert Dick Office: 77 Tech Email: dickrp@northwestern.edu Phone: 847 467 2298

More information

! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! Standard Cells. ! CMOS Process Enhancements

! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! Standard Cells. ! CMOS Process Enhancements EE 570: igital Integrated Circuits and VLI Fundamentals Lec 3: January 18, 2018 MO Fabrication pt. 2: esign Rules and Layout Lecture Outline! MO evice Layout! Inverter Layout! Gate Layout and tick iagrams!

More information

Abu Dhabi Men s College, Electronics Department. Logic Families

Abu Dhabi Men s College, Electronics Department. Logic Families bu Dhabi Men s College, Electronics Department Logic Families There are several different families of logic gates. Each family has its capabilities and limitations, its advantages and disadvantages. The

More information

MOSFET Amplifier Design

MOSFET Amplifier Design MOSFET Amplifier Design Introduction In this lab, you will design a basic 2-stage amplifier using the same 4007 chip as in lab 2. As a reminder, the PSpice model parameters are: NMOS: LEVEL=1, VTO=1.4,

More information

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often

More information

Digital Integrated Circuits EECS 312

Digital Integrated Circuits EECS 312 14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980

More information

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage? Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance

More information

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Teaser. Pass Transistor Logic. Identify Function.

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Teaser. Pass Transistor Logic. Identify Function. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lecture Outline! Pass Transistor Logic! Performance Lec 15: March 1, 2018 Combination Logic: Pass Transistor Logic, and Performance 2 Pass Transistor

More information

Chapter 1. Introduction

Chapter 1. Introduction EECS3611 Analog Integrated Circuit esign Chapter 1 Introduction EECS3611 Analog Integrated Circuit esign Instructor: Prof. Ebrahim Ghafar-Zadeh, Prof. Peter Lian email: egz@cse.yorku.ca peterlian@cse.yorku.ca

More information

ELEC Digital Logic Circuits Fall 2015 Delay and Power

ELEC Digital Logic Circuits Fall 2015 Delay and Power ELEC - Digital Logic Circuits Fall 5 Delay and Power Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University, Auburn, AL 36849 http://www.eng.auburn.edu/~vagrawal

More information

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor

More information

Exam 1 ECE 410 Fall 2002

Exam 1 ECE 410 Fall 2002 NAME: Exa 1 ECE 410 Fall 2002 During this exa you are allowed to use a calculator and the equations sheet provided. You are not allowed to speak to or exchange books, papers, calculators, etc. with other

More information

EE 330 Lecture 42. Other Logic Styles Digital Building Blocks

EE 330 Lecture 42. Other Logic Styles Digital Building Blocks EE 330 Lecture 42 Other Logic Styles Digital Building Blocks Logic Styles Static CMOS Complex Logic Gates Pass Transistor Logic (PTL) Pseudo NMOS Dynamic Logic Domino Zipper Static CMOS Widely used Attractive

More information

INTRODUCTION TO MOS TECHNOLOGY

INTRODUCTION TO MOS TECHNOLOGY INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor

Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an

More information

Digital Microelectronic Circuits ( ) CMOS Digital Logic. Lecture 6: Presented by: Adam Teman

Digital Microelectronic Circuits ( ) CMOS Digital Logic. Lecture 6: Presented by: Adam Teman Digital Microelectronic Circuits (361-1-3021 ) Presented by: Adam Teman Lecture 6: CMOS Digital Logic 1 Last Lectures The CMOS Inverter CMOS Capacitance Driving a Load 2 This Lecture Now that we know all

More information

General Structure of MOS Inverter

General Structure of MOS Inverter General Structure of MOS Inverter Load V i Drive Department of Microelectronics and omputer Science, TUL Digital MOS ircuits Families Digital MOS ircuits PMOS NMOS MOS BiMOS Depletion mode load Enhancement

More information

Introduction to Electronic Devices

Introduction to Electronic Devices Introduction to Electronic Devices (Course Number 300331) Fall 2006 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.:

More information

Fundamentals of Microelectronics

Fundamentals of Microelectronics Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors

More information

A Circuit Level Fault Model for Resistive Shorts of MOS Gate Oxide

A Circuit Level Fault Model for Resistive Shorts of MOS Gate Oxide Circuit Level Fault Moel for esistive Shorts of MOS Gate Oxie Xiang Lu, Zhuo Li, Wangqi Qiu, D. M. H. Walker an Weiping Shi Dept. of Electrical Engineering Texas &M University College Station, TX 77843-34,

More information

Dynamic Logic. Domino logic P-E logic NORA logic 2-phase logic Multiple O/P domino logic Cascode logic 11/28/2012 1

Dynamic Logic. Domino logic P-E logic NORA logic 2-phase logic Multiple O/P domino logic Cascode logic 11/28/2012 1 Dynamic Logic Dynamic Circuits will be introduced and their performance in terms of power, area, delay, energy and AT 2 will be reviewed. We will review the following logic families: Domino logic P-E logic

More information

Today's Goals. Finish MOS transistor Finish NMOS logic Start CMOS logic

Today's Goals. Finish MOS transistor Finish NMOS logic Start CMOS logic Bi Today's Goals Finish MOS transistor Finish Start Bi MOS Capacitor Equations Threshold voltage Gate capacitance V T = ms Q i C i Q II C i Q d C i 2 F n-channel - - p-channel ± ± + + - - Contributions

More information