CMOS LOGIC Inside the CMOS inverter, no I D current flows through transistors when input is logic 1 or logic 0, because
|
|
- Mervin Black
- 5 years ago
- Views:
Transcription
1 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross CMO LOGIC Inside the CMO inverter, no I current flows through transistors when input is logic 1 or logic 0, because the NMO transistor is cutoff for logic 0 (0 V) input the PMO transistor is cutoff for logic 1 ( ) input current through the turned on transistor has nowhere to go if next stage consists of transistor gates 1 2 V IN EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross V IN = 0 V V IN = NMO transistor cutoff (since V G(N) = V IN = 0 V) acts as open circuit PMO transistor on (V G(P) = V IN = - ) but I (P) = 0 => V (P) = 0 V I (N) (= -I (P) ) PMO transistor cutoff (V G(P) = V IN = 0 V) acts as open circuit NMO transistor on (V G(N) = V IN = ) but I (N) = 0 => V (N) = 0 V I (N) (= -I (P) ) X X
2 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross EY MOEL OR LOGIC NLYI There is a simpler model for the behavior of transistors in a CMO logic circuit, which applies when the input to the logic circuit is fully logic 0 or fully logic 1. G V G = 0 V Each transistor will be in one of these two situations! V G = (for NMO) V G = - (for PMO) G We can use the model to quickly determine the logical operation of a CMO circuit (but we cannot use it to find circuit currents or voltages that will occur for mid-range input voltages). EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross REVIIT CMO INVERTER WITH IMPLE LOGIC MOEL ill in the switch positions below V IN = 0 V V IN =
3 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross CMO NN PMO 1 PMO 2 NMO 1 NMO 2 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NN circuit: =
4 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NN circuit: = = = EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross CMO NOR PMO 1 PMO 2 NMO 1 NMO 2
5 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NOR circuit: = EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross Verify the logical operation of the CMO NOR circuit: = = =
6 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross PULL-UP N PULL-OWN EVICE In our logic circuits, the NMO transistor sources are connected to ground, and the PMO sources are connected to. Notice that when NMO transistors are on (when V GN = ) V N is shorted by switch, helping connect output to ground. The NMO transistor functions as a pull-down device; when active, it brings the output to 0 V. When PMO transistors are on (when V GP = - ) V P is shorted by switch, helping connect output to. The PMO transistor functions as a pull-up device; when active, it brings the output to. EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross LIMITTION O WITCH MOEL Preview of next class: PMO 1 PMO 2 NMO 1 NMO 2 In reality, the pull-up devices must have some V voltage and current flow to bring the output high since natural capacitance must be charged. imilarly, the pull-down devices must have some V voltage and current flow to bring the output to ground since natural capacitance must be discharged. This is GTE ELY.
7 EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross LIMITTION O WITCH MOEL uppose one needed to fully analyze the circuit for intermediate input voltages. Requires many equations, many unknowns. PMO 1 = PMO 2 = V TH(N) + ε NMO 1 NMO 2 ut, we can at least guess the modes. EEC 40 pring 2003 Lecture 22. Ross EEC 40 pring 2003 Lecture 22. Ross ssume around 5 V, V TH(N) around 1 V, V TH(P) around -1 V, ε around 0.5 V. = PMO 1 PMO 2 = V TH(N) + ε NMO 1 NMO 2 PMO 1 cutoff NMO 1 barely on (V (N2) 0) => saturation NMO 2 fully on, but NMO 1 limits I to small value => triode PMO 2 on, but NMO 1 and PMO 1 make I small => triode
EE 330 Lecture 5. Improved Device Models Propagation Delay in Logic Circuits
EE 330 Lecture 5 Improved evice Models Propagation elay in Logic Circuits Review from Last Time MO Transistor Qualitative iscussion of n-channel Operation rain rain ulk Cross-ectional View n-channel MOFET
More informationD n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN
Name: EXAM #3 Closed book, closed notes. Calculators may be used for numeric computations only. All work is to be your own - show your work for maximum partial credit. Data: Use the following data in all
More informationShorthand Notation for NMOS and PMOS Transistors
Shorthand Notation for NMOS and PMOS Transistors Terminal Voltages Mode of operation depends on V g, V d, V s V gs = V g V s V gd = V g V d V ds = V d V s = V gs - V gd Source and drain are symmetric diffusion
More informationECE Digital Logic Lecture 2. Digital Design Circuit Types: Combinational vs. Sequential
ECE 74 - Digital Logic Lecture Circuit Types: Combinational vs. equential Lecture Transistors, witches, CMO Basic Logic Gates Boolean Equations Truth Table: w/o time or previous values Circuit Components:
More informationECE380 Digital Logic. Logic values as voltage levels
ECE380 Digital Logic Implementation Technology: NMOS and PMOS Transistors, CMOS logic gates Dr. D. J. Jackson Lecture 13-1 Logic values as voltage levels V ss is the minimum voltage that can exist in the
More informationEE 330 Lecture 5. Other Logic Styles. Improved Device Models. complex logic gates pass transistor logic
EE 330 Lecture 5 Other Logic Styles complex logic gates pass transistor logic Improved evice Models Review from Last Time MOS Transistor Qualitative iscussion of n-channel Operation Source Gate rain rain
More informationEEC 118 Lecture #12: Dynamic Logic
EEC 118 Lecture #12: Dynamic Logic Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Outline Today: Alternative MOS Logic Styles Dynamic MOS Logic Circuits: Rabaey
More informationLecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1
Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation
More information5. CMOS Gates: DC and Transient Behavior
5. CMOS Gates: DC and Transient Behavior Jacob Abraham Department of Electrical and Computer Engineering The University of Texas at Austin VLSI Design Fall 2017 September 18, 2017 ECE Department, University
More informationEEC 118 Lecture #11: CMOS Design Guidelines Alternative Static Logic Families
EEC 118 Lecture #11: CMOS Design Guidelines Alternative Static Logic Families Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Homework 5 this week Lab
More informationEE 330 Lecture 5. Other Logic Styles Improved Device Models Stick Diagrams
EE 330 Lecture 5 Other Logic Styles Improved evice Models Stick iagrams Review from Last Time MOS Transistor Qualitative iscussion of n-channel Operation ulk Source Gate rain rain Gate n-channel MOSFET
More informationECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits
Faculty of Engineering ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits CMOS Technology Complementary MOS, or CMOS, needs both PMOS and NMOS FET devices for their logic gates to be realized
More informationCombinational Logic Gates in CMOS
Combinational Logic Gates in CMOS References: dapted from: Digital Integrated Circuits: Design Perspective, J. Rabaey UC Principles of CMOS VLSI Design: Systems Perspective, 2nd Ed., N. H. E. Weste and
More informationLecture # 16 Logic with a State Dependent Device. Logic Gates How are they built in practice?
EECS 42 Introduction to Digital Electronics Andrew R. Neureuther These viewgraphs will be handed out in class 1/21/ Lecture # 16 Logic with a State Dependent Device S&O pp. 9-9, 4-6 (read for graphs and
More information8. Combinational MOS Logic Circuits
8. Combinational MOS Introduction Combinational logic circuits, or gates, witch perform Boolean operations on multiple input variables and determine the output as Boolean functions of the inputs, are the
More informationECE/CoE 0132: FETs and Gates
ECE/CoE 0132: FETs and Gates Kartik Mohanram September 6, 2017 1 Physical properties of gates Over the next 2 lectures, we will discuss some of the physical characteristics of integrated circuits. We will
More informationI. Digital Integrated Circuits - Logic Concepts
I. Digital Integrated Circuits - Logic Concepts. Logic Fundamentals: binary mathematics: only operate on and (oolean algebra) simplest function -- inversion = symbol for the inverter INPUT OUTPUT EECS
More informationDigital Integrated CircuitDesign
Digital Integrated CircuitDesign Lecture 11 BiCMOS PMOS rray Q1 NMOS rray Y NMOS rray Q2 dib brishamifar EE Department IUST Contents Introduction BiCMOS Devices BiCMOS Inverters BiCMOS Gates BiCMOS Drivers
More informationLecture 13 - Digital Circuits (II) MOS Inverter Circuits. October 25, 2005
6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 13-1 Lecture 13 - Digital Circuits (II) MOS Inverter Circuits October 25, 25 Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS
More informationEECE2412 Final Exam. with Solutions
EECE2412 Final Exam with Solutions Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University Fall Semester 2010 My file 11480/exams/final General Instructions:
More informationDesign cycle for MEMS
Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor
More informationShow the details of the derivation for Eq. (6.33) for the PMOS device.
Problem 6.11 Rahul Mhatre Show the details of the derivation for Eq. (6.33) for the PMOS device. Since the device is a PMOS MOSFET, source and drain are p+ regions and the substrate is an nwell. Therefore,
More informationINF4420. Outline. Switched capacitor circuits. Switched capacitor introduction. MOSFET as an analog switch 1 / 26 2 / 26.
INF4420 Switched capacitor circuits Spring 2012 Jørgen Andreas Michaelsen (jorgenam@ifi.uil.no) 1 / 26 Outline Switched capacitor introduction MOSFET as an analog switch 2 / 26 Introduction Discrete time
More information12/01/2009. Practice with past exams
EE40 Final Exam Review Prof. Nathan Cheung 12/01/2009 Practice with past exams http://hkn.eecs.berkeley.edu/exam/list/?examcourse=ee%2040 Slide 1 Overview of Course Circuit components: R, C, L, sources
More informationEE 42/100 Lecture 23: CMOS Transistors and Logic Gates. Rev A 4/15/2012 (10:39 AM) Prof. Ali M. Niknejad
A. M. Niknejad University of California, Berkeley EE 100 / 42 Lecture 23 p. 1/16 EE 42/100 Lecture 23: CMOS Transistors and Logic Gates ELECTRONICS Rev A 4/15/2012 (10:39 AM) Prof. Ali M. Niknejad University
More informationECE520 VLSI Design. Lecture 5: Basic CMOS Inverter. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 5: Basic CMOS Inverter Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture
More informationECE520 VLSI Design. Lecture 11: Combinational Static Logic. Prof. Payman Zarkesh-Ha
EE520 VLSI esign Lecture 11: ombinational Static Logic Prof. Payman Zarkesh-Ha Office: EE ldg. 230 Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 eview of Last
More informationMicroelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types
More informationModule 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits
Module 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits Objectives In this lecture you will learn the following Ratioed Logic Pass Transistor Logic Dynamic Logic Circuits
More informationLecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 22, 2001
6.12 - Microelectronic Devices and Circuits - Spring 21 Lecture 13-1 Lecture 13 - Digital Circuits (II) MOS Inverter Circuits March 22, 21 Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS
More informationDesigning Information Devices and Systems II Fall 2017 Note 1
EECS 16B Designing Information Devices and Systems II Fall 2017 Note 1 1 Digital Information Processing Electrical circuits manipulate voltages (V ) and currents (I) in order to: 1. Process information
More informationECE 471/571 The CMOS Inverter Lecture-6. Gurjeet Singh
ECE 471/571 The CMOS Inverter Lecture-6 Gurjeet Singh NMOS-to-PMOS ratio,pmos are made β times larger than NMOS Sizing Inverters for Performance Conclusions: Intrinsic delay tp0 is independent of sizing
More informationHW#3 Solution. Dr. Parker. Spring 2014
HW#3 olution r. Parker pring 2014 Assume for the problems below that V dd = 1.8 V, V tp0 is -.7 V. and V tn0 is.7 V. V tpbodyeffect is -.9 V. and V tnbodyeffect is.9 V. Assume ß n (k n )= 219.4 W/L µ A(microamps)/V
More informationWeek 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model
Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section
More informationMicroelectronics Circuit Analysis and Design
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationECE 340 Lecture 40 : MOSFET I
ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do
More informationCMOS VLSI Design (A3425)
CMOS VLSI Design (A3425) Unit III Static Logic Gates Introduction A static logic gate is one that has a well defined output once the inputs are stabilized and the switching transients have decayed away.
More informationDigital logic families
Digital logic families Digital logic families Digital integrated circuits are classified not only by their complexity or logical operation, but also by the specific circuit technology to which they belong.
More informationLecture 7: Components of Phase Locked Loop (PLL)
Lecture 7: Components of Phase Locked Loop (PLL) CSCE 6933/5933 Instructor: Saraju P. Mohanty, Ph. D. NOTE: The figures, text etc included in slides are borrowed from various books, websites, authors pages,
More informationEE5320: Analog IC Design
EE5320: Analog IC Design Handout 3: MOSFETs Saurabh Saxena & Qadeer Khan Indian Institute of Technology Madras Copyright 2018 by EE6:Integrated Circuits & Systems roup @ IIT Madras Overview Transistors
More informationDigital Integrated Circuits - Logic Families (Part II)
Digital Integrated Circuits - Logic Families (Part II) MOSFET Logic Circuits MOSFETs are unipolar devices. They are simple, small in size, inexpensive to fabricate and consume less power. MOS fabrication
More informationECE 3110: Engineering Electronics II Fall Final Exam. Dec. 16, 8:00-10:00am. Name: (78 points total)
Final Exam Dec. 16, 8:00-10:00am Name: (78 points total) Problem 1: Consider the emitter follower in Fig. 7, which is being used as an output stage. For Q 1, assume β = and initally assume that V BE =
More informationZero Steady State Current Power-on-Reset Circuit with Brown-Out Detector
Zero Steady State Current Power-on-Reset Circuit with Brown-Out Detector Sanjay Kumar Wadhwa 1, G.K. Siddhartha 2, Anand Gaurav 3 Freescale Semiconductor India Pvt. Ltd. 1 sanjay.wadhwa@freescale.com,
More informationPractice 6: CMOS Digital Logic
Practice 6: CMOS Digital Logic Digital Electronic Circuits Semester A 2012 The MOSFET as a Switch The MOSFET as a Switch We can look at the MOSFET as a Switch, passing the data between the diffusions when
More informationLecture 4. The CMOS Inverter. DC Transfer Curve: Load line. DC Operation: Voltage Transfer Characteristic. Noise in Digital Integrated Circuits
Noise in Digital Integrated Circuits Lecture 4 The CMOS Inverter i(t) v(t) V DD Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail:
More informationCHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES
CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES 41 In this chapter, performance characteristics of a two input NAND gate using existing subthreshold leakage
More informationVLSI Design. Static CMOS Logic
VLSI esign Static MOS Logic [dapted from Rabaey s igital Integrated ircuits, 2002, J. Rabaey et al.] EE4121 Static MOS Logic.1 ZLM Review: MOS Process at a Glance efine active areas Etch and fill trenches
More informationEE434 ASIC & Digital Systems
EE434 ASIC & Digital Systems Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Spring 2015 Dae Hyun Kim daehyun@eecs.wsu.edu 1 Lecture 4 More on CMOS Gates Ref: Textbook chapter
More informationDIGITAL ELECTRONICS. A2: logic circuits parameters. Politecnico di Torino - ICT school
Politecnico di Torino - ICT school A2: logic circuits parameters DIGITAL ELECTRONICS A INTRODUCTION A.2 Logic circuits parameters» Static parameters» Interfacing and compatibility» Output stages» Dynamic
More informationPreliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B
Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied
More informationLecture 9 Transistors
Lecture 9 Transistors Physics Transistor/transistor logic CMOS logic CA 1947 http://www.extremetech.com/extreme/164301-graphenetransistors-based-on-negative-resistance-could-spell-theend-of-silicon-and-semiconductors
More informationTopic 6. CMOS Static & Dynamic Logic Gates. Static CMOS Circuit. NMOS Transistors in Series/Parallel Connection
NMOS Transistors in Series/Parallel Connection Topic 6 CMOS Static & Dynamic Logic Gates Peter Cheung Department of Electrical & Electronic Engineering Imperial College London Transistors can be thought
More informationLecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III
Lecture 3 Biasing and Loading Single Stage FET Amplifiers The Building Blocks of Analog Circuits III In this lecture you will learn: Current biasing of circuits Current sources and sinks for CS, CG, and
More informationMOS IC Amplifiers. Token Ring LAN JSSC 12/89
MO IC Amplifiers MOFETs are inferior to BJTs for analog design in terms of quality per silicon area But MO is the technology of choice for digital applications Therefore, most analog portions of mixed-signal
More informationCPE/EE 427, CPE 527 VLSI Design I CMOS Inverter. CMOS Inverter: A First Look
CPE/EE 427, CPE 527 VLSI Design I CMOS Inverter Department of Electrical and Computer Engineering University of Alabama in Huntsville Aleksandar Milenkovic CMOS Inverter: A First Look C L 9/11/26 VLSI
More informationECE315 / ECE515 Lecture 7 Date:
Lecture 7 ate: 01.09.2016 CG Amplifier Examples Biasing in MOS Amplifier Circuits Common Gate (CG) Amplifier CG Amplifier- nput is applied at the Source and the output is sensed at the rain. The Gate terminal
More informationCurve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer
Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer The objective of this lab is to become familiar with methods to measure the dc current-voltage (IV) behavior of diodes
More informationImproved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD?
Improved Inverter: Current-Source Pull-Up MOS Inverter with Current-Source Pull-Up What else could be connected between the drain and? Replace resistor with current source I SUP roc i D v IN v OUT Find
More informationELEC 350L Electronics I Laboratory Fall 2012
ELEC 350L Electronics I Laboratory Fall 2012 Lab #9: NMOS and CMOS Inverter Circuits Introduction The inverter, or NOT gate, is the fundamental building block of most digital devices. The circuits used
More informationEE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND
More information1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6)
CSE 493/593 Test 2 Fall 2011 Solution 1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6) Decreasing of W to make the gate slower,
More informationChapter 13: Introduction to Switched- Capacitor Circuits
Chapter 13: Introduction to Switched- Capacitor Circuits 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4 Switched-Capacitor Integrator 13.5 Switched-Capacitor
More informationA gate sizing and transistor fingering strategy for
LETTER IEICE Electronics Express, Vol.9, No.19, 1550 1555 A gate sizing and transistor fingering strategy for subthreshold CMOS circuits Morteza Nabavi a) and Maitham Shams b) Department of Electronics,
More informationBasic digital logic functions and gates
Basic digital logic functions and gates Digital logic functions and gates are the main blocks behind digital logic design. s and 1s combine to produce values that are generated by basic gates such as NOT,
More informationECEN325: Electronics Summer 2018
ECEN325: Electronics Summer 2018 Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements & Reading H5 due today Exam 2 on
More informationLecture 27: MOSFET Circuits at DC.
Whites, EE 30 Lecture 7 Page 1 of 8 Lecture 7: MOSFET Circuits at C. We will illustrate the C analysis of MOSFET circuits through a number of examples in this lecture. Example N7.1 (similar to text Example
More informationLECTURE 14. (Guest Lecturer: Prof. Tsu-Jae King) Last Lecture: Today:
LECTURE 14 (uest Lecturer: Prof. Tsu-Jae King) Last Lecture: emiconductors, oping PN Junction iodes iode tructure and I vs. V characteristics iode Circuits Today: N-Channel MOFET tructure The MOFET as
More informationCMOS Inverter & Ring Oscillator
CMOS Inverter & Ring Oscillator Theory: In this Lab we will implement a CMOS inverter and then use it as a building block for a Ring Oscillator. MOSfets (Metal Oxide Semiconductor Field Effect Transistors)
More informationEE 40. Midterm 3. November 14, 2002
Lab TA: Dan Bart Nir Konrad Yu Ching EE 40 Midterm 3 November 14, 2002 PLEASE WRITE YOUR NAME ON EACH ATTACHED PAGE PLEASE SHOW YOUR WORK TO RECEIVE PARTIAL CREDIT Problem 1: 10 Points Possible Problem
More informationDigital circuits. Bởi: Sy Hien Dinh
Digital circuits Bởi: Sy Hien Dinh This module presents the basic concepts of MOSFET digital logic circuits. We will examine NMOS logic circuits, which contain only n-channel transistors, and complementary
More informationDigital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.
Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition
More informationThe CMOS Inverter. Lecture 3a Static properties (VTC and noise margins)
The CMOS Inverter Lecture 3a Static properties (VTC and noise margins) Why so much about inverters? The current that any CMOS logic gate can deliver or sink can be calculated from equivalent inverter!
More informationLecture Integrated circuits era
Lecture 1 1.1 Integrated circuits era Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell laboratories. In 1961, first IC was introduced. Levels of Integration:-
More informationLecture 4. MOS transistor theory
Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage
More informationMetal Oxide Semiconductor Field-Effect Transistors (MOSFETs)
Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away
More informationTo make the gm constant, the two parameters can be made constant at first: '
EE 501 Lab 9 Constant gm circuit for rail to rail input common mode voltage Due: November 20, 2014 Objective: To understand the constant gm input circuit (appendix 1). To implement the circuit with low
More informationEE100Su08 Lecture #16 (August 1 st 2008)
EESu8 Lecture #6 (ugust st 28) OUTLINE Project next week: Pick up kits in your first lab section, work on the project in your first lab section, at home etc. and wrap up in the second lab section. USE
More informationIntroduction to Computer Engineering EECS 203 dickrp/eecs203/ Grading scheme. Review.
Introduction to Computer Engineering EECS 203 http://ziyang.eecs.northwestern.edu/ dickrp/eecs203/ Grading scheme Instructor: Robert Dick Office: 77 Tech Email: dickrp@northwestern.edu Phone: 847 467 2298
More information! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! Standard Cells. ! CMOS Process Enhancements
EE 570: igital Integrated Circuits and VLI Fundamentals Lec 3: January 18, 2018 MO Fabrication pt. 2: esign Rules and Layout Lecture Outline! MO evice Layout! Inverter Layout! Gate Layout and tick iagrams!
More informationAbu Dhabi Men s College, Electronics Department. Logic Families
bu Dhabi Men s College, Electronics Department Logic Families There are several different families of logic gates. Each family has its capabilities and limitations, its advantages and disadvantages. The
More informationMOSFET Amplifier Design
MOSFET Amplifier Design Introduction In this lab, you will design a basic 2-stage amplifier using the same 4007 chip as in lab 2. As a reminder, the PSpice model parameters are: NMOS: LEVEL=1, VTO=1.4,
More informationMOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.
MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often
More informationDigital Integrated Circuits EECS 312
14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980
More informationExam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?
Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Teaser. Pass Transistor Logic. Identify Function.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lecture Outline! Pass Transistor Logic! Performance Lec 15: March 1, 2018 Combination Logic: Pass Transistor Logic, and Performance 2 Pass Transistor
More informationChapter 1. Introduction
EECS3611 Analog Integrated Circuit esign Chapter 1 Introduction EECS3611 Analog Integrated Circuit esign Instructor: Prof. Ebrahim Ghafar-Zadeh, Prof. Peter Lian email: egz@cse.yorku.ca peterlian@cse.yorku.ca
More informationELEC Digital Logic Circuits Fall 2015 Delay and Power
ELEC - Digital Logic Circuits Fall 5 Delay and Power Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University, Auburn, AL 36849 http://www.eng.auburn.edu/~vagrawal
More informationECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
More informationExam 1 ECE 410 Fall 2002
NAME: Exa 1 ECE 410 Fall 2002 During this exa you are allowed to use a calculator and the equations sheet provided. You are not allowed to speak to or exchange books, papers, calculators, etc. with other
More informationEE 330 Lecture 42. Other Logic Styles Digital Building Blocks
EE 330 Lecture 42 Other Logic Styles Digital Building Blocks Logic Styles Static CMOS Complex Logic Gates Pass Transistor Logic (PTL) Pseudo NMOS Dynamic Logic Domino Zipper Static CMOS Widely used Attractive
More informationINTRODUCTION TO MOS TECHNOLOGY
INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor
More informationElectronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor
Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an
More informationDigital Microelectronic Circuits ( ) CMOS Digital Logic. Lecture 6: Presented by: Adam Teman
Digital Microelectronic Circuits (361-1-3021 ) Presented by: Adam Teman Lecture 6: CMOS Digital Logic 1 Last Lectures The CMOS Inverter CMOS Capacitance Driving a Load 2 This Lecture Now that we know all
More informationGeneral Structure of MOS Inverter
General Structure of MOS Inverter Load V i Drive Department of Microelectronics and omputer Science, TUL Digital MOS ircuits Families Digital MOS ircuits PMOS NMOS MOS BiMOS Depletion mode load Enhancement
More informationIntroduction to Electronic Devices
Introduction to Electronic Devices (Course Number 300331) Fall 2006 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.:
More informationFundamentals of Microelectronics
Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors
More informationA Circuit Level Fault Model for Resistive Shorts of MOS Gate Oxide
Circuit Level Fault Moel for esistive Shorts of MOS Gate Oxie Xiang Lu, Zhuo Li, Wangqi Qiu, D. M. H. Walker an Weiping Shi Dept. of Electrical Engineering Texas &M University College Station, TX 77843-34,
More informationDynamic Logic. Domino logic P-E logic NORA logic 2-phase logic Multiple O/P domino logic Cascode logic 11/28/2012 1
Dynamic Logic Dynamic Circuits will be introduced and their performance in terms of power, area, delay, energy and AT 2 will be reviewed. We will review the following logic families: Domino logic P-E logic
More informationToday's Goals. Finish MOS transistor Finish NMOS logic Start CMOS logic
Bi Today's Goals Finish MOS transistor Finish Start Bi MOS Capacitor Equations Threshold voltage Gate capacitance V T = ms Q i C i Q II C i Q d C i 2 F n-channel - - p-channel ± ± + + - - Contributions
More information