Silicon carbide Semiconductor Products
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1 Power Matters. Silicon carbide Semiconductor Products Low Switching Losses High Power Density High Thermal Conductivity Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and System Costs
2 The Power of Silicon Carbide Semiconductors Breakthrough Technology Combines High Performance & Low Losses Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, milaerospace and communication market segments. Microsemi is proud to be at the forefront of this game changing technology with a comprehensive portfolio of SiC solutions and inhouse fabrication capabilities. ExtrEmEly low Switching losses Reduction in Losses Zero reverse recovery charge improves system efficiency Model Inverter high PowEr DEnSity Smaller footprint device reduces system size and weight All SiC Solution = 70% Reduction in Losses SiC Switch + SiC SBD high thermal conductivity 2.5x more thermally conductive than silicon Switching Losses IGBT+SiC SBD Conduction Losses reduced Sink requirements results in lower cost and smaller size IGBT + Si FWD high temperature operation increased power density and improved reliability industrial DEFEnSE 0 aviation Down hole medical
3 Power Modules SiC Power Module Advantages High speed switching Low profile Low switching losses Minimum parasitic inductance Low input capacitance Lower system cost Low drive requirements Increased reliability S ta n d a r d M o d u l e S mix SiSic Full Sic 600V & 1200V 600V & 1200V Boost & Buck Chopper 15A 107A 50A 100A Dual Boost & Buck Chopper 29A 40A 20A 90A Full Bridge Diode 6A 40A Full Bridge + PFC 38A Full Bridge + Secondary Fast Rectifier Bridge 38A 11A 38A Electrical topology Dual Diode Full Bridge + Series and Parallel Diodes Phase Leg 40A 200A Phase Leg + PFC 27A 38A Phase Leg + Series and Parallel Diodes 21A 110A Single Switch + Series and Parallel Diodes 86A 110A 20A 160A 3Level TType Inverter 40A 80A 20A 50A Triple Phase Leg 50A 87A Si IGBT Si MOSFET Si Diode SiC Diode SiC MOSFET 3Level NPT Inverter Optional Materials: AlN substrate Si3N4 Substrate AlSiC base plate material Temperature sensor Press fit terminals (for SP3 package) C u S t o M i z at i o n Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection, configuration, performance and cost. Out of the existing standard power modules product line, Microsemi can offer simple, modified or fully customized parts to meet 100% of our customers needs. Design expertise High power density Low profile packages Extended temperature capabilities Pin locating flexibility Mix of Silicon
4 Discrete Products released ProduCtS 600 Volt 150 C Rated Schottky Barrier Diodes: 175 C Rated Schottky Barrier Diodes: 1200 Volt 150 C Rated Schottky Barrier Diodes: 175 C Rated Schottky Barrier Diodes: Future ProduCtS V175 C Rated Schottky Barrier Diodes: 10A and 20A 1200V175 C Rated Schottky Barrier Diode: 50A V175 C Rated MOSFET 80 milliohm Rdson 160 milliohm Rdson 1700V175 C Rated MOSFET Extreme Environments Hermetic SiC Devices 600V rated SiC Schottky Barrier Diode (SBD) 5A, 10A and 50A 1200V rated SiC Schottky Barrier Diode (SBD) 5A, 10A and 50A Package Type: TO254, TO258, TO257, TO39, TO3, U3, U4 and U1 Configuration: Standard Rectifier, Common Cathode (CC), Common Anode (CA), Doubler (D) Temperature: 175ºC Future Products: Voidless Glass SiC SBD P/N Current (A) Voltage (V) Description Package Type MSICSN05120CA SiC Dual Schottky Rectifier TO257 MSICSN05120CC SiC Dual Schottky Rectifier TO257 MSICSN05120D SiC Dual Schottky Rectifier TO257 MSICSS05120CC SiC Dual Schottky Rectifier U3 MSICSN SiC Schottky Rectifier TO257 MSICSS SiC Schottky Rectifier U4 MSICST SiC Schottky Rectifier TO39 MSICSX SiC Schottky Rectifier TO257 (Tabless) MSICSN10060CA SiC Dual Schottky Rectifier TO257 MSICSN10060CC SiC Dual Schottky Rectifier TO257 MSICSN10060D SiC Dual Schottky Rectifier TO257 MSICSS10060CC SiC Dual Schottky Rectifier U3 MSICSN SiC Schottky Rectifier TO257 MSICSS SiC Schottky Rectifier U4 MSICST SiC Schottky Rectifier TO39 MSICSN10120CA SiC Dual Schottky Rectifier TO257 MSICSN10120CC SiC Dual Schottky Rectifier TO257 MSICSN10120D SiC Dual Schottky Rectifier TO257 MSICSS10120CC SiC Dual Schottky Rectifier U3 MSICSN SiC Schottky Rectifier TO257 MSICSS SiC Schottky Rectifier U4 MSICST SiC Schottky Rectifier TO39 MSICSE50120CA SiC Dual Schottky Rectifier TO258 MSICSE50120CC SiC Dual Schottky Rectifier TO258 MSICSE50120D SiC Dual Schottky Rectifier TO258 MSICSF SiC Schottky Rectifier TO254 MSICSS SiC Schottky Rectifier U1 MSICST SiC Schottky Rectifier TO3
5 Overview & Resources Microsemi Corporation has a full silicon carbide (SiC) wafer fab at its Bend, Oregon site. This facility has a 25year history of innovation and manufacturing of highvoltage highfrequency power semiconductors and is ISO 9001 and JANS certified. In addition to producing discrete SiC semiconductors, Microsemi has developed a variety of SiC and mixed semiconductor power modules. These modules, incorporating the latest in available technologies, offer rugged operation as well as high efficiency. Microsemi has a wide ranging interest in partnering with customers to provide the best SiC solution for a specific application. F u L L I n H o u s e C a Pa b I L I t I e s Discrete Products Design Silvaco Design and Process Simulator TCADTMA MaskMaking and Layout Solid Works & FEA D Process HighTemperature Ion Implantation HighTemperature Annealing SiC MOSFET Gate Oxide ASML Steppers RIE and Plasma Etching Released Products Sputtered and Evaporated Metal Deposition Future Products analytical and Support Atomic Force Microscope 600 Volt nspec Defect DetectionBarrier 150 C Rated Schottky SEM/EDAX Diodes: 10A, 20A, 30A HTRB, HTGB, TC, PC, HTOL and 85/85 Sonoscan Xray 150 C Ratedand Schottky Barrier Diodes: 10A, 20A, 30A 175 C Rated Schottky Barrier 1700V175 C Rated Schottky Barrier Diodes: 10A, 20A Released Products Thermal Imaging 1200 Volt Wafer Level HTRB/HTGB 175 C Rated Schottky Barrier reliability testing & Screening Diodes: 10A, 20A, 30A V175 C Rated Schottky Barrier Diode: 50A 600 Volt james.kerr 4/22/13 11: Deleted: james.kerr 4/22/13 11: Deleted: james.kerr 4/22/13 12: 150 C Rated Schottky Barrier Formatted: Font:12 p 1200V175 C Rated MOSFET Diodes: 10A, 20A, 30A james.kerr 4/22/13 11: o 80 milliohm Rdson Formatted: No bullet james.kerr 4/22/13 11: 175 C Rated Schottky Barrier Formatted: Font:12 p o Diodes: 160 milliohm Rdson 10A, 20A, 30A james.kerr 4/22/13 11:
6 For more information contact: SiC Discrete Products 405 Sw columbia Street Bend, oregon usa SiC Module Products 26, rue campilleau Bruges, France Extreme Environment Products 6 lake Street lawrence, massachusetts Corporate Office one Enterprise aliso viejo, ca sales.support@microsemi.com Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA USA Within the USA: +1 (949) Sales: +1 (949) Fax: +1 (949) sales.support@microsemi.com Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include highperformance, radiationhardened and highly reliable analog mixedsignal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable antitamper products; PoweroverEthernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. MS800813
Silicon carbide Semiconductor Products
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