The Next Steps in the Educa2on and Research on Wide Band Gap (WBG) Semiconductors Based Power Electronics

Transcription

1 The Next Steps in the Educa2on and Research on Wide Band Gap (WBG) Semiconductors Based Power Electronics Anant Agarwal The Ohio State University Reinventing Electric Power Curriculum with Sustainability Focus NSF-Sponsored Faculty/Industry Workshop June 15-17, 2017 University of Minnesota 1

2 PowerAmerica Ins2tute at NC State University Vision Energy savings through deployment of WBG Power Electronics & Development of a Manufacturing Base in the US through: Achieving 10 /A prices of WBG devices in 5 years Power Electronics Demonstra2ons while training graduate students in the use of WBG devices. Train students in design, manufacturing and characteriza2on of WBG power devices Three Pillars of PowerAmerica PowerAmerica started opera2ons on Feb. 01, 2015 with $70 M DOE funding over 5 years 2

3 Goal: Achieve 10 /A for 1.2 kv Switches in 5 yrs Combine common Si and SiC process lines 90% are the same Aggregate Substrate and Epi demand to nego2ate bezer pricing Innova2on through design Reduce technology risk, encourage investments by VC firms - $10-15 M is required to create a product as opposed to $200 M Substrate & Epi Vendors Universi?es 150 mm Si Commercial Foundry Na?onal Labs Companies 3

4 Commercial SiC MOSFET Price Projections By 2020, 1.2KV SiC MOSFET price will drop to <10c/Amp 4

5 Florida State University: 100 kw SiC Transformer- less PV Converter MPPT: V S1 D1 T2 T3 T1 480V T4 Interleaved Boost Converter Parallelled-five-level Inverter (P5L) S1 & D1: 1200V full SiC boost module T1 ~ T4: 1200V full SiC t-type module InterCell Transformer Parameters 45.4 W/in3, 5kW/kg Efficiency 800V 720V kw DC link voltage Vin V Output voltage vg 480 V rms line- to- line Output frequency 60 Hz Cooling Air cooled Dimension 18.5 x 17 x 7 Weight 19.7 kg 100 Output power/kw CEC Efficiency@720V:99.2% 6 Ph.D. students, 2 Masters and 7 Ugs Courtesy: Prof. Helen Li, FSU Values Nominal output power Boost 0 Line impdedance Inverter switching frequency 75 khz module 1200 V SiC Boost inductance 400 μh inductor weight 815 g switching frequency 50 khz module 1200 V SiC T- type ICT inductance 9 mh ICT leakage inductance 10 μh ICT weight 840 g DC link capacitance C1 & C2 2.1 mf 5

6 Impact of WBG Power Electronics Traineeship Program UT Knoxville 11 US Grad students, 6 PE courses modified with WBG content Intermediate bus converter for data centers 6.78 MHz rec?fier for wireless power Point of load power converter op?miza?on 110 MHz integrated ba_ery charger High density solar inverter Online condi?oning monitoring of SiC- - based phase- - leg modules WBG- - based power module for EV applica?ons WBG controller for variable reactor GaN- - based Class D audio amplifier Intelligent gate drive for paralleled SiC devices for medium voltage motor drives Low- - cost GaN- - based solar inverter Courtesy: Prof. Fred Wang, UT Knoxville 6

7 Design and Development of a 1 MVA SiC-based Medium Voltage Variable Speed Drive 1. MMC System Implementation The designed MV VFD system consists of 36 medium voltage SiC MOSFET based submodules (SMs) and configured as a 7-level multilevel modular converter (MMC). The Multilevel structure enables both higher efficiency and lower THD for MVVFD applications. 3.1 Submodule Test Setup 2.1 Controller Design The controller is responsible for generating PWM signals to control the MMC to drive a motor rated for 1 MVA, 1000 Hz operation. It consists of a DSP for closed loop control and a FPGA for PWM generation and submodule selection. In the following picture, the hardware is connected to a real time simulator to validate the control algorithms. Submodule under Test Controller Thermometer FPGA Board and Optical Fiber Interface Board Real-time Simulator 3.2 MMC Tower 2.2 Hardware-in-the-Loop Verification 10-Hz Operation Capacitor voltage Fluctuation = Phase current System Specifications: Ø DC bus: 7000 V Ø Power rating: 1 MVA Ø Efficiency: 99.2% Ø Submodule number per arm: 6 Ø Nominal capacitor voltage: 1160 V Ø Output voltage: 4160 V Ø Output frequency: Hz Ip2p=200 A Special control algorithms are implemented to suppress capacitor voltage fluctuations and generate sinusoidal current in the load. Contact: Longya Xu, Jin Wang and Fang Luo (OSU CHPPE) * At this time, one third of the tower is populated for single phase based validations. Tower Dimensions: 0.95 m * 0.7 m * 1.8 m = 1.2 m3 Expected power density: 0.83 MW/m3

8 What else should we do to promote WBG Educa?on? Teach Design and Processing of WBG Power Devices using Commercial Foundry. Create Text Books. Create Reference designs for Power Electronics and make them available free of cost to everyone. Create Text Books. Work on Building Power Electronics Hands- on courses using WBG devices. 8

9 Achieving >50% Renewables w/o Massive Storage Today, LV Si Based Smart Inverters are used But, this solution is not viable above 20% Renewables

10 High Penetra2on Distributed Genera2on 13.8 kv Distribution Substation Bus Smart Grid Power DMS Control Communication Transmission Customers Asynchronous Microgrid Customers MV AC AC MV DER + CHP + TF Courtesy: Dr. Al Heffner, NIST

11 HV SiC makes 100% Renewable Energy Affordable Silicon Solution Example installation: 2 x 5 MVA (Grid Link) Cost: ~ $1 M/MW Uses GE MV 7000 Inverters Includes Breakers, Harmonic Filters 12 ft tall 50 ft long 24 ft wide Courtesy: Dr. Al Heffner, NIST

12 Silicon Carbide Implementa2on with kv devices Courtesy: Prof. Subhashish Bha_acharya Power America, NCSTAE Univ. HV-HF SiC Modules enable: Much Smaller Size and Weight (10x) Lower Cost Potential Better Performance Lower impedance Higher bandwidth

13 Summary Approaching a Global Energy 2pping point Ø Urgent need for reducing GHG Ø Expansion of Renewable Sources is cri2cal Ø HV SiC devices necessary for realiza2on Fabless foundry Model WILL reduce WBG prices and accelerate market adop2on Next Big Markets: Transporta2on, Data Servers and Variable Speed Drives for MW Motors Educa2onal Ini2a2ves- essen2al for future workforce 13