EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts
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1 EVERSPIN s New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts This Application Note is to inform Everspin customers that a new, DFN8 package with a 2mm bottom exposed pad has been added to EVERSPIN s family of SPI products. This new package allows the device to be used on both JEDEC standard SOIC-8 pin as well as DFN8 PCB Land Patterns. When ordering SPI devices with the smaller exposed pad, please us the DF suffix. Figure 1 shows a typical SOIC-8 PCB land pattern. BACKGROUND Some Everspin customers have expressed concern about marginal clearance between the exposed bottom pad of the Everspin DC DFN package (4.1mm pad), and the PCB pads for an SOIC-8 package. This concern is alleviated with Everspin s new 2mm exposed pad DFN-8 package. Figure 1 typifies approximate dimensions and recommended PCB Land Pattern for a JEDEC standard SOIC-8 package (Note: the below dimensions are approximate and may vary by supplier) Figure 1 - Package Dimension and Land Pattern for 8 pin SOIC Copyright 2013 Everspin Technologies 1 Document Number: /2013
2 Figures 2 and 3 are package dimensions for the Everspin MR25HxxxDC (4.1mm exposed bottom pad) and MR25HxxxDF (2.0mm exposed bottom pad) packages respectively. Due to the marginal clearance between the 4.1mm exposed bottom pad of the MR25HxxxDC and the SOIC-8 PCB land pattern, the new package with a 2.0mm exposed bottom pad (MR25HxxxDF) has been approved for production by Everspin and is compatible with both JEDEC standard SOIC-8 and DFN-8 Land Patterns. The smaller bottom pad offers adequate clearance between the bottom pad and the PCB land pattern of the SOIC-8. NOTE: Exposed 4.1mm x 4.1mm pad has no internal electrical connection -recommend connect to Vss or DC (Do Not Connect ) Figure 2 - Package Dimensions for Everspin MR25HxxxDC Package Copyright 2013 Everspin Technologies 2 Document Number: /2013
3 NOTE: Exposed 2mmx2mm pad has no internal electrical connection - recommend connect to Vss or DC (Do Not Connect ) Figure 3 - Package Dimension for Everspin s MR25HxxxDF Package Copyright 2013 Everspin Technologies 3 Document Number: /2013
4 Figure 4 illustrates marginal clearance between the JEDEC standard SOIC-8 Land Pattern and the 4.1mm exposed pad on the bottom of the MR25HxxxDF DFN package against the additional clearance offered by the smaller, 2mm exposed pad of the MR25HxxxDF package. Outline of DFN package mm exposed thermal pad on DC packages Distance between SOIC-8 Land Pattern and 4.1mm exposed thermal pad of DC package offers marginal clearance for solder reflow onto SOIC-8 Land patterns 6.75 Smaller, 2mm exposed thermal pad on DF package offers greater clearance between thermal pad and SOIC-8 Land Pattern JEDEC standard SOIC-8 Land Pattern Figure 4 - Dimensions of Everspin s DC vs. DF packages on JEDEC SOIC-8 Land Pattern (Note 1: All dimensions in mm) Copyright 2013 Everspin Technologies 4 Document Number: /2013
5 Figure 5 is the recommended PCB Land Pattern for Everspin s DC DFN-8 packages. This Land Pattern will accommodate both the MR25HxxxDC as well as the MR25HxxxDF packages. Note that it is acceptable to mount a DF package on the 4.1mm x 4.1mm Land Pattern (recommended for the MR25HxxxDC packages), however figure 6 is the recommended Land Pattern for the MR25HxxxDF packages (2mm exposed pad). Figure 5: Everspin s recommended Land Pattern for the DC package. (Note that it is acceptable to mount the DF package on the 4.1mm x 4.1mm Land Pattern recommended for the DC package, however figure 6 is the recommended Land Pattern for the DF package (All units in mm) Copyright 2013 Everspin Technologies 5 Document Number: /2013
6 Figure 6: Recommended PCB Land Pattern for Everspin s MR25HxxxDF packages. (All units in mm) Copyright 2013 Everspin Technologies 6 Document Number: /2013
7 How to Reach Us: Home Page: USA/Canada/South and Central America Everspin Technologies 1347 N. Alma School Road, Suite 220 Chandler, Arizona MRAM (6726) Europe, Middle East and Africa Japan Asia Pacific Everspin Technologies, Inc. are trademarks of Everspin Technologies, Inc. All other product or service names are the property of their respective owners. Copyright 2013 Everspin Technologies, Inc. Information in this document is provided solely to enable system and software implementers to use Everspin Technologies products. There are no express or implied licenses granted hereunder to design or fabricate any integrated circuit or circuits based on the information in this document. Everspin Technologies reserves the right to make changes without further notice to any products herein. Everspin makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Everspin Technologies assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters, which may be provided in Everspin Technologies data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters including Typical must be validated for each customer application by `-customer s technical experts. Everspin Technologies does not convey any license under its patent rights nor the rights of others. Everspin Technologies products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Everspin Technologies product could create a situation where personal injury or death may occur. Should Buyer purchase or use Everspin Technologies products for any such unintended or unauthorized application, Buyer shall indemnify and hold Everspin Technologies and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Everspin Technologies was negligent regarding the design or manufacture of the part. Everspin and the Everspin logo EVERSPIN s new, 2mm Exposed Pad DFN package meets both SOIC-8 and DFN8 PCB Layouts Author: Chuck Bohac, Manager Applications Engineering, Everspin Technologies chuck.bohac@everspin.com, Copyright 2013 Everspin Technologies 7 Document Number: /2013
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MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NCV1009ZG. 2.5 Volt Reference
V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor
TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
N-Channel 700-V (D-S) MOSFET
AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
RF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier
Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where