Advanced Materials Research Center and University Research. Alex Oscilowski Vice President-Strategy SEMATECH

Size: px
Start display at page:

Download "Advanced Materials Research Center and University Research. Alex Oscilowski Vice President-Strategy SEMATECH"

Transcription

1 Advanced Materials Research Center and University Research Alex Oscilowski Vice President-Strategy SEMATECH

2 SEMATECH and University Research Key Partnership Models to Facilitate University Research: Advanced Materials Research Center (AMRC) Semiconductor Research Corporation (SRC) Engineering Research Center (ERC) for Benign Semiconductor Manufacturing

3 Advanced Materials Research Center (AMRC) University R&D partnership - accelerating commercialization of university research Government Texas Universities Selected Semiconductors Programs Select programs in: Semiconductors, Nanotechnology Provides technology pipeline from universities through SEMATECH to industry Focus on future transistors, interconnects, patterning, metrology; emerging nanotechnology applications

4 AMRC Partnership with Texas SEMATECH / ATDF Microelectronics Research Center University of Texas at Austin Participating facilities include: SEMATECH/ATDF Microelectronics Research Center Texas Materials Institute Center for Nano & Molecular Science and Technology Provides technology pipeline to SEMATECH members Fundamental understanding High-quality students, technical skills SEMATECH members get IP rights

5 AMRC University Programs Topic Details UT Lead Title Materials and Structures for Future Transistors Materials and Structures for Future Connectivity Patterning of Materials and Structures Metrology and Characterization of Materials and Structures Advanced CMOS Materials & Processes Beyond CMOS Novel Transistors Advanced Cu/Low-K Future Connectivity Gate Stack Materials Lee Kwong PVD High -K Dielectrics: Reliability Issues Understanding and Characterization of Key Issues Related to High-K Gate Dielectrics and Metal Gate Electrodes Register Modeling of Gate Stack Materials Channel Materials Banerjee Channel materials Ultra-Shallow Junctions Hwang Ultra Shallow Junctions Novel Transistors: Multi-gate SOI MOSFETS, FinFETs, New Transistors on Singh / Banerjee and Vertical MOSFETS Strained Silicon + SOI Register Transport Models for Strained Si and FinFETs NanoTechnology Dodabalapur Advanced Organic/Silicon Devices for Chemical and Biosensing Ekerdt Quantum Dot Floating Gate Flash Memories Barrier Materials/ Ultra Thin Diffusion Barrier and Pore Sealing Techniques Low-k Ekerdt / White for 45 nm and Beyond Nano-Conductors / Low-k Ho Nanoconductors for Future Interconnects 3-D Technology Neikirk Optical Interconnect Optical Detectors for Interconnect Common Resist for for 193 nm, e-beam, & Imprint Template R. Chen Deppe Campbell Holmes Measurement, Electrical Characterization, and Design Of Advanced Interconnects Optical On-Chip and Chip-to-Chip Interconnects Optical Interconnect Elements Optical Extension Immersion Lithography Willson / Bonnecaze / Shi Immersion Lithography - Fluids and Resists Functional Resist Willson / Ekerdt / Shi Functional Resists Nanotechnology Patterning Willson / Ekerdt / Shi Common Electron Beam Resists Field Assisted Lithography Willson / Sreenivasan Field Assisted Lithography Spectroscopic Methods for Profiling High-K Dielectric Films Downer and Nanometer-Scale SOI Structures Future Advanced CMOS Shih Dopant Profiling with STM Transistors Yacaman Transition Electron Microscopy Studies Beyond CMOS Campion Strain Measurement by Raman Spectroscopy Patterning Patterning & Standards Korgel Nanowires and Nanodots for Metrology Standards Defects De Lozzane STM Studies for Metrology

6 Higher-k Gate Dielectric (Prof. Dim-Lee Kwong) Results for HfTaTiO Studying potential for extension of Hf-based dielectrics 1st SEMATECH-AMRC higher-k material achieving sub-1.0nm results with good device properties K values > 40 obtained (HfO 2 ~ 20) Peak mobility similar to best FEP HfO 2 Ultra-thin equivalent oxide thickness ( 9Å) achieved through process optimization HfTaTiO nmosfet characteristics also studied Laminated HfTaTiO dielectric increases the crystallization temperature up to 900 o C

7 Functional Materials for Cost Reduction Direct formation of dual Damascene dielectric using imprint patterning (Prof. G. Willson) Imprinting multi-tier templates Integrating SFIL wafers into ATDF copper flow Developing new imprintable dielectric materials 1 st try 2 nd try Template improvements Multi-tier imprint in resist Copper/CMP dual Damascene test structure made in ATDF Cubic Silsesquioxane structures

8 Sensors Low Cost Organic Transistors (Prof. A. Dodabalapur) Change of transistor drain current 4 terminal transistor/sensor High sensitivity/selectivity Can be reset with low hysteresis (>70 cycles) AMRC IP disclosure/patent Δ on sweep # ddhα6t / 1-hexanol, on response Analyte delivery time (sec) Ohmic Contacts (Al) Organic Source/Drain Contacts (Ag) Si0 2 Organic Si Source/Drain Semiconductor Si Source/Drain Contact (Ag) Si0 2 Gate Oxide Contact (Ag) + n Source/Drain (Si) n - channel doping Source/Drain (Si) n + p - Substrate (Si)

9 Nanowires Aberration Corrected HR-TEM Results (Prof. Korgel) 400,000 x 200 kev Simulated TEM images when [110] grown nanowire with {111} defect is viewed from various perspectives 10 nm Improved imaging: Au dot structure Epitaxy of Si nanowire on gold dot Nanowire Twinning New calibration mechanism for HR-TEM, and sub-35nm dimensional imaging

10 AMRC Status Year 1 (2004/05) Projects Impact 26 ongoing projects About 200 graduate students, post-docs, faculty, and staff being supported fully or in part by AMRC Assignees dedicated to AMRC projects Publications >100 Joint authorship by multiple AMRC faculty, industry partners and/or SEMATECH (>20) Invited papers IP University or joint invention disclosures Patent applications Member-proprietary reports and briefings

11 FEP Transition Center Semiconductor Research Corporation (SRC) $ Technology NCSU, Rutgers, Stanford, U. Albany, UT Austin, UT Dallas, UT Arlington, Texas A&M Univ., UCSB, OSU, Yale, Penn State Univ., DeMontfort Univ. U. of Washington. U. Minnesota, UCLA Purdue, UIUC, U. of Houston, Cornell, UC Berkeley, U. of Utah, U. of North Texas Funding Universities

12 FORCe II Factory Operations Research Center IC Makers Technology Suppliers Funding Academia Participating Universities Govt.

13 FORCe II Mission and Objectives Provide new concepts and capabilities for modeling and decision support to address the challenges of next-generation factories, including management of supply chain, fab operations, process control and yield Evaluate software/tools from research via member company pilot projects Understand more complex, integration-oriented areas to provide new concepts/methods to business owners Drive suppliers to provide capability via business owner department (direct customer) pull Plan commercialization projects in parallel with research as appropriate

14 FORCe II Projects Qin, Hasenbein University of Texas Austin Fab-wide Control and Disruption Management in High Volume Semiconductor Manufacturing Mastrangelo, Montgomery University of Washington / Arizona State Hierarchical Modeling of Yield and Defectivity to Improve Factory Operations Uzsoy Purdue University Incorporating Nonlinear Phenomena in Semiconductor Supply Chain Planning Models Ni University of Michigan Development of Predictive Modeling and Intelligent Decision Support Tools for the High Yield Next Generation Semiconductor Factories

15 FORCe II Projects Wu, Berger Lehigh University Demand Planning and Supply Chain Coordination in the Contract Mfgm. Environments Nelson, Fowler Northwestern Univ. / Arizona State Univ. Multi-product Cycle Time and Throughput Evaluation via Simulation on Demand Chou, Chen, Chang National Taiwan University Configuration, monitoring and control of semiconductor supply chain Raghavan Indian Institute of Science Models and Algorithms for Demand Planning and order allocation across high mix factories

16 Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Mission Research to develop science and technology leading to simultaneous process performance/cost/esh gain Incorporating ESH principles in engineering and science education Promoting Design for Environment and sustainability as a technology driver and not a burden Chairman: Farhang Shadman, Univ. of Arizona

17 Participating Research Institutions University of Arizona MIT Stanford University UC Berkeley Cornell University Lincoln Laboratory University of Maryland Purdue University Founders 1996 Joined in 1998 New Partners

18 ERC Membership Core Members AMD* Chartered Semiconductor Freescale Semiconductor* IBM* Intel* LSI Logic* National Semiconductor* Texas Instruments* Adjunct Members HP Strategic Partners SEMATECH SEMI SRC * Companies that have traditionally participated in the ERC project selection process Science Area Members Axcelis Technologies Cadence Design Mentor Graphics Novellus Systems Rohm and Haas Associate Members The MITRE Corporation Affiliate Members PDF Solutions Government Participants DARPA, NSF, NIST, NY State, U.S. Dept. of Defense

19 ERC Program Organization Thrust A BEOL Processes Environmentally Benign Etching of BEOL Dielectrics Solventless Low-k Dielectric Novel Barrier Film Deposition Methods CMP Waste Minimization Environmentally Benign Planarization Thrust B FEOL Processes Thrust C Factory Integration Thrust D Patterning Education New Thrusts Novel Surface Cleaning and Passivation Selective Deposition for Gate Stack Manufacturing Etching of New High-k and Electrode Materials Low-Energy Water Purification and Wastewater Treatment Efficient Wafer Rinsing and Cleaning Water Recycle and Reuse Integrated ESH Impact Assessment Solventless Lithography Additive Processing ESH Concepts in Science/Engineering Curricula Continuing Education and Short Courses Outreach Long-Term Plan in Packaging Area

20 2005/2006 ERC Deliverables 1. Evaluation of biological and physico-chemical methods for PFOS removal from semiconductor effluents 2. Survey of CMP waste treatment technologies 3. Optimization of CMP process parameters, pad groove configurations and slurries for reduced delamination processes 4. Study of the effects of alternate brush design and brush porosity on post-cmp cleaning efficiency

21 2005/2006 ERC Deliverables 5. Evaluation of SCCO 2 as a viable technology in porous low-k film cleans - pore capping at the surface of patterned porous MSQ films 6. Wet cleans systems for 45 nm node and beyond 7. Pore sealing and repair of low k films 8. Non-damaging Plasma Etch

22 Success depends on executing the right collaborative model with the right partners. Collaboration is the key

Collaboration: The Semiconductor Industry s Path to Survival and Growth

Collaboration: The Semiconductor Industry s Path to Survival and Growth Collaboration: The Semiconductor Industry s Path to Survival and Growth Dr. Michael R. Polcari President and CEO SEMATECH 15 March 2005 3/17/2005 J:\ADMCTR\OCE\M_Polcari\ITPC 10-04 1 Outline Environment

More information

A Presentation to the National Academies July 29, Larry W. Sumney President/CEO Semiconductor Research Corporation1

A Presentation to the National Academies July 29, Larry W. Sumney President/CEO Semiconductor Research Corporation1 A Presentation to the National Academies July 29, 2009 Larry W. Sumney President/CEO Semiconductor Research Corporation1 What is SRC? World s leading consortium funding collaborative university research

More information

ISMI Industry Productivity Driver

ISMI Industry Productivity Driver SEMATECH Symposium Japan September 15, 2010 Accelerating Manufacturing Productivity ISMI Industry Productivity Driver Scott Kramer VP Manufacturing Technology SEMATECH Copyright 2010 SEMATECH, Inc. SEMATECH,

More information

Research Needs for Device Sciences Modeling and Simulation (May 6, 2005)

Research Needs for Device Sciences Modeling and Simulation (May 6, 2005) Research Needs for Device Sciences Modeling and Simulation (May 6, 2005) SRC Device Sciences 2005 Modeling and Simulation Task Force Contributing organizations: Axcelis, Freescale, IBM, Intel, LSI, SRC,

More information

The SEMATECH Model: Potential Applications to PV

The SEMATECH Model: Potential Applications to PV Continually cited as the model for a successful industry/government consortium Accelerating the next technology revolution The SEMATECH Model: Potential Applications to PV Dr. Michael R. Polcari President

More information

research in the fields of nanoelectronics

research in the fields of nanoelectronics FRAUNHOFEr center Nanoelectronic Technologies research in the fields of nanoelectronics 1 contents Fraunhofer CNT in Profile 3 Competence Areas Analytics 4 Functional Electronic Materials 5 Device & Integration

More information

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI Lecture: Integration of silicon photonics with electronics Prepared by Jean-Marc FEDELI CEA-LETI Context The goal is to give optical functionalities to electronics integrated circuit (EIC) The objectives

More information

Nanotechnology, the infrastructure, and IBM s research projects

Nanotechnology, the infrastructure, and IBM s research projects Nanotechnology, the infrastructure, and IBM s research projects Dr. Paul Seidler Coordinator Nanotechnology Center, IBM Research - Zurich Nanotechnology is the understanding and control of matter at dimensions

More information

Advanced PDK and Technologies accessible through ASCENT

Advanced PDK and Technologies accessible through ASCENT Advanced PDK and Technologies accessible through ASCENT MOS-AK Dresden, Sept. 3, 2018 L. Perniola*, O. Rozeau*, O. Faynot*, T. Poiroux*, P. Roseingrave^ olivier.faynot@cea.fr *Cea-Leti, Grenoble France;

More information

FinFET Devices and Technologies

FinFET Devices and Technologies FinFET Devices and Technologies Jack C. Lee The University of Texas at Austin NCCAVS PAG Seminar 9/25/14 Material Opportunities for Semiconductors 1 Why FinFETs? Planar MOSFETs cannot scale beyond 22nm

More information

ITRS MOSFET Scaling Trends, Challenges, and Key Technology Innovations

ITRS MOSFET Scaling Trends, Challenges, and Key Technology Innovations Workshop on Frontiers of Extreme Computing Santa Cruz, CA October 24, 2005 ITRS MOSFET Scaling Trends, Challenges, and Key Technology Innovations Peter M. Zeitzoff Outline Introduction MOSFET scaling and

More information

IMPACT OF 450MM ON CMP

IMPACT OF 450MM ON CMP IMPACT OF 450MM ON CMP MICHAEL CORBETT MANAGING PARTNER LINX CONSULTING, LLC MCORBETT@LINX-CONSULTING.COM PREPARED FOR CMPUG JULY 2011 LINX CONSULTING Outline 1. Overview of Linx Consulting 2. CMP Outlook/Drivers

More information

A Perspective on Semiconductor Equipment. R. B. Herring March 4, 2004

A Perspective on Semiconductor Equipment. R. B. Herring March 4, 2004 A Perspective on Semiconductor Equipment R. B. Herring March 4, 2004 Outline Semiconductor Industry Overview of circuit fabrication Semiconductor Equipment Industry Some equipment business strategies Product

More information

Enabling Breakthroughs In Technology

Enabling Breakthroughs In Technology Enabling Breakthroughs In Technology Mike Mayberry Director of Components Research VP, Technology and Manufacturing Group Intel Corporation June 2011 Defined To be defined Enabling a Steady Technology

More information

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices Christopher Batten School of Electrical and Computer Engineering Cornell University http://www.csl.cornell.edu/courses/ece5950 Simple Transistor

More information

G450C. Global 450mm Consortium at CNSE. Michael Liehr, General Manager G450C, Vice President for Research

G450C. Global 450mm Consortium at CNSE. Michael Liehr, General Manager G450C, Vice President for Research Global 450mm Consortium at CNSE Michael Liehr, General Manager G450C, Vice President for Research - CNSE Overview - G450C Vision - G450C Mission - Org Structure - Scope - Timeline The Road Ahead for Nano-Fabrication

More information

Fabricating 2.5D, 3D, 5.5D Devices

Fabricating 2.5D, 3D, 5.5D Devices Fabricating 2.5D, 3D, 5.5D Devices Bob Patti, CTO rpatti@tezzaron.com Tezzar on Semiconduct or 04/15/2013 1 Gen4 Dis-Integrated 3D Memory DRAM layers 42nm node 2 million vertical connections per lay per

More information

Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs

Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs Sanghoon Lee 1*, V. Chobpattana 2,C.-Y. Huang 1, B. J. Thibeault 1, W. Mitchell 1, S. Stemmer

More information

Innovation to Advance Moore s Law Requires Core Technology Revolution

Innovation to Advance Moore s Law Requires Core Technology Revolution Innovation to Advance Moore s Law Requires Core Technology Revolution Klaus Schuegraf, Ph.D. Chief Technology Officer Silicon Systems Group Applied Materials UC Berkeley Seminar March 9 th, 2012 Innovation

More information

The Development of the Semiconductor CVD and ALD Requirement

The Development of the Semiconductor CVD and ALD Requirement The Development of the Semiconductor CVD and ALD Requirement 1 Linx Consulting 1. We create knowledge and develop unique insights at the intersection of electronic thin film processes and the chemicals

More information

Manufacturing. Dielectric CMP Characterization Mask Courstesy: D. Ouma, B. Lee and T. Park (D. S. Boning, J. Chung)

Manufacturing. Dielectric CMP Characterization Mask Courstesy: D. Ouma, B. Lee and T. Park (D. S. Boning, J. Chung) Manufacturing Dielectric CMP Characterization Mask Courstesy: D. Ouma, B. Lee and T. Park (D. S. Boning, J. Chung) 186 Manufacturing Process Control System Architecture Novel Methods for Run by Run Process

More information

CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs

CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs 1 CMOS Digital Integrated Circuits 3 rd Edition Categories of Materials Materials can be categorized into three main groups regarding their

More information

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI 1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward

More information

45nm Foundry CMOS with Mask-Lite Reduced Mask Costs

45nm Foundry CMOS with Mask-Lite Reduced Mask Costs This work is sponsored by the Air Force Research Laboratory (AFRL/RVSE) TPOC: Mr. Kenneth Hebert 45nm Foundry CMOS with Mask-Lite Reduced Mask Costs 25 October 2011 www.americansemi.com 2011 American Semiconductor,

More information

NANOELECTRONIC TECHNOLOGY: CHALLENGES IN THE 21st CENTURY

NANOELECTRONIC TECHNOLOGY: CHALLENGES IN THE 21st CENTURY NANOELECTRONIC TECHNOLOGY: CHALLENGES IN THE 21st CENTURY S. M. SZE National Chiao Tung University Hsinchu, Taiwan And Stanford University Stanford, California ELECTRONIC AND SEMICONDUCTOR INDUSTRIES

More information

FinFET vs. FD-SOI Key Advantages & Disadvantages

FinFET vs. FD-SOI Key Advantages & Disadvantages FinFET vs. FD-SOI Key Advantages & Disadvantages Amiad Conley Technical Marketing Manager Process Diagnostics & Control, Applied Materials ChipEx-2014, Apr 2014 1 Moore s Law The number of transistors

More information

write-nanocircuits Direct-write Jaebum Joo and Joseph M. Jacobson Molecular Machines, Media Lab Massachusetts Institute of Technology, Cambridge, MA

write-nanocircuits Direct-write Jaebum Joo and Joseph M. Jacobson Molecular Machines, Media Lab Massachusetts Institute of Technology, Cambridge, MA Fab-in in-a-box: Direct-write write-nanocircuits Jaebum Joo and Joseph M. Jacobson Massachusetts Institute of Technology, Cambridge, MA April 17, 2008 Avogadro Scale Computing / 1 Avogadro number s? Intel

More information

40nm Node CMOS Platform UX8

40nm Node CMOS Platform UX8 FUKAI Toshinori, IKEDA Masahiro, TAKAHASHI Toshifumi, NATSUME Hidetaka Abstract The UX8 is the latest process from NEC Electronics. It uses the most advanced exposure technology to achieve twice the gate

More information

InGaAs MOSFETs for CMOS:

InGaAs MOSFETs for CMOS: InGaAs MOSFETs for CMOS: Recent Advances in Process Technology J. A. del Alamo, D. Antoniadis, A. Guo, D.-H. Kim 1, T.-W. Kim 2, J. Lin, W. Lu, A. Vardi and X. Zhao Microsystems Technology Laboratories,

More information

Parameter Optimization Of GAA Nano Wire FET Using Taguchi Method

Parameter Optimization Of GAA Nano Wire FET Using Taguchi Method Parameter Optimization Of GAA Nano Wire FET Using Taguchi Method S.P. Venu Madhava Rao E.V.L.N Rangacharyulu K.Lal Kishore Professor, SNIST Professor, PSMCET Registrar, JNTUH Abstract As the process technology

More information

Litho Metrology. Program

Litho Metrology. Program Litho Metrology Program John Allgair, Ph.D. Litho Metrology Manager (Motorola assignee) john.allgair@sematech.org Phone: 512-356-7439 January, 2004 National Nanotechnology Initiative Workshop on Instrumentation

More information

Advanced Digital Integrated Circuits. Lecture 2: Scaling Trends. Announcements. No office hour next Monday. Extra office hour Tuesday 2-3pm

Advanced Digital Integrated Circuits. Lecture 2: Scaling Trends. Announcements. No office hour next Monday. Extra office hour Tuesday 2-3pm EE241 - Spring 20 Advanced Digital Integrated Circuits Lecture 2: Scaling Trends and Features of Modern Technologies Announcements No office hour next Monday Extra office hour Tuesday 2-3pm 2 1 Outline

More information

W ith development risk fully borne by the equipment industry and a two-year delay in the main

W ith development risk fully borne by the equipment industry and a two-year delay in the main Page 1 of 5 Economic Challenges and Opportunities in the 300 mm Transition Iddo Hadar, Jaim Nulman, Kunio Achiwa, and Oded Turbahn, Applied Materials Inc. -- 10/1/1998 Semiconductor International W ith

More information

Beyond Transistor Scaling: New Devices for Ultra Low Energy Information Processing

Beyond Transistor Scaling: New Devices for Ultra Low Energy Information Processing Beyond Transistor Scaling: New Devices for Ultra Low Energy Information Processing Prof. Tsu Jae King Liu Department of Electrical Engineering and Computer Sciences University of California, Berkeley,

More information

DATASHEET CADENCE QRC EXTRACTION

DATASHEET CADENCE QRC EXTRACTION DATASHEET Cadence QRC Etraction, the industry s premier 3D fullchip parasitic etractor that is independent of design style or flow, is a fast and accurate RLCK etraction solution used during design implementation

More information

420 Intro to VLSI Design

420 Intro to VLSI Design Dept of Electrical and Computer Engineering 420 Intro to VLSI Design Lecture 0: Course Introduction and Overview Valencia M. Joyner Spring 2005 Getting Started Syllabus About the Instructor Labs, Problem

More information

Newer process technology (since 1999) includes :

Newer process technology (since 1999) includes : Newer process technology (since 1999) includes : copper metalization hi-k dielectrics for gate insulators si on insulator strained silicon lo-k dielectrics for interconnects Immersion lithography for masks

More information

Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007

Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-1 Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007 Contents: 1. MOSFET scaling

More information

Energy beam processing and the drive for ultra precision manufacturing

Energy beam processing and the drive for ultra precision manufacturing Energy beam processing and the drive for ultra precision manufacturing An Exploration of Future Manufacturing Technologies in Response to the Increasing Demands and Complexity of Next Generation Smart

More information

AN ANALYSIS: TRADITIONAL SEMICONDUCTOR LITHOGRAPHY VERSUS EMERGING TECHNOLOGY (NANO IMPRINT) Robert L. Wright Kranthi Mitra Adusumilli

AN ANALYSIS: TRADITIONAL SEMICONDUCTOR LITHOGRAPHY VERSUS EMERGING TECHNOLOGY (NANO IMPRINT) Robert L. Wright Kranthi Mitra Adusumilli Proceedings of the 2005 Winter Simulation Conference M. E. Kuhl, N. M. Steiger, F. B. Armstrong, and J. A. Joines, eds. AN ANALYSIS: TRADITIONAL SEMICONDUCTOR LITHOGRAPHY VERSUS EMERGING TECHNOLOGY (NANO

More information

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html

More information

Low-Power VLSI. Seong-Ook Jung VLSI SYSTEM LAB, YONSEI University School of Electrical & Electronic Engineering

Low-Power VLSI. Seong-Ook Jung VLSI SYSTEM LAB, YONSEI University School of Electrical & Electronic Engineering Low-Power VLSI Seong-Ook Jung 2013. 5. 27. sjung@yonsei.ac.kr VLSI SYSTEM LAB, YONSEI University School of Electrical & Electronic Engineering Contents 1. Introduction 2. Power classification & Power performance

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 11/01/2007 MOSFETs Lecture 5 Announcements HW7 set is due now HW8 is assigned, but will not be collected/graded. MOSFET Technology Scaling Technology

More information

Pattern Transfer CD-AFM. Resist Features on Poly. Poly Features on Oxide. Quate Group, Stanford University

Pattern Transfer CD-AFM. Resist Features on Poly. Poly Features on Oxide. Quate Group, Stanford University Resist Features on Poly Pattern Transfer Poly Features on Oxide CD-AFM The Critical Dimension AFM Boot -Shaped Tip Tip shape is optimized to sense topography on vertical surfaces Two-dimensional feedback

More information

IBM Research - Zurich Research Laboratory

IBM Research - Zurich Research Laboratory October 28, 2010 IBM Research - Zurich Research Laboratory Walter Riess Science & Technology Department IBM Research - Zurich wri@zurich.ibm.com Outline IBM Research IBM Research Zurich Science & Technology

More information

Future MOSFET Devices using high-k (TiO 2 ) dielectric

Future MOSFET Devices using high-k (TiO 2 ) dielectric Future MOSFET Devices using high-k (TiO 2 ) dielectric Prerna Guru Jambheshwar University, G.J.U.S. & T., Hisar, Haryana, India, prernaa.29@gmail.com Abstract: In this paper, an 80nm NMOS with high-k (TiO

More information

Accelerating Growth and Cost Reduction in the PV Industry

Accelerating Growth and Cost Reduction in the PV Industry Accelerating Growth and Cost Reduction in the PV Industry PV Technology Roadmaps and Industry Standards An Association s Approach Bettina Weiss / SEMI PV Group July 29, 2009 SEMI : The Global Association

More information

Lithography Industry Collaborations

Lithography Industry Collaborations Accelerating the next technology revolution Lithography Industry Collaborations SOKUDO Breakfast July 13, 2011 Stefan Wurm SEMATECH Copyright 2009 SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered

More information

Lecture 27 ANNOUNCEMENTS. Regular office hours will end on Monday 12/10 Special office hours will be posted on the EE105 website

Lecture 27 ANNOUNCEMENTS. Regular office hours will end on Monday 12/10 Special office hours will be posted on the EE105 website Lecture 27 ANNOUNCEMENTS Regular office hours will end on Monday 12/10 Special office hours will be posted on the EE105 website Final Exam Review Session: Friday 12/14, 3PM, HP Auditorium Video will be

More information

EE 330 Lecture 7. Design Rules. IC Fabrication Technology Part 1

EE 330 Lecture 7. Design Rules. IC Fabrication Technology Part 1 EE 330 Lecture 7 Design Rules IC Fabrication Technology Part 1 Review from Last Time Technology Files Provide Information About Process Process Flow (Fabrication Technology) Model Parameters Design Rules

More information

Timothy S. Cale, Ph.D ,

Timothy S. Cale, Ph.D , Timothy S. Cale, Ph.D. timothy.cale@gmail.com, 480-381-2228, www.process-evolution.com Objective Provide software tools and consulting services that improve materials and processes. Summary I have extensive

More information

Chapter 15 Summary and Future Trends

Chapter 15 Summary and Future Trends Chapter 15 Summary and Future Trends Hong Xiao, Ph. D. hxiao89@hotmail.com www2.austin.cc.tx.us/hongxiao/book.htm Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm 1 The 1960s First IC product Bipolar

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 11/6/2007 MOSFETs Lecture 6 BJTs- Lecture 1 Reading Assignment: Chapter 10 More Scalable Device Structures Vertical Scaling is important. For example,

More information

New Process Technologies Will silicon CMOS carry us to the end of the Roadmap?

New Process Technologies Will silicon CMOS carry us to the end of the Roadmap? HPEC Workshop 2006 New Process Technologies Will silicon CMOS carry us to the end of the Roadmap? Craig L. Keast, Chenson Chen, Mike Fritze, Jakub Kedzierski, Dave Shaver HPEC 2006-1 Outline A brief history

More information

Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.

Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-

More information

HOW TO CONTINUE COST SCALING. Hans Lebon

HOW TO CONTINUE COST SCALING. Hans Lebon HOW TO CONTINUE COST SCALING Hans Lebon OUTLINE Scaling & Scaling Challenges Imec Technology Roadmap Wafer size scaling : 450 mm 2 COST SCALING IMPROVED PERFORMANCE 3 GLOBAL TRAFFIC FORECAST Cloud Traffic

More information

VLSI Design. Introduction

VLSI Design. Introduction Tassadaq Hussain VLSI Design Introduction Outcome of this course Problem Aims Objectives Outcomes Data Collection Theoretical Model Mathematical Model Validate Development Analysis and Observation Pseudo

More information

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers Wafer-scale integration of silicon-on-insulator RF amplifiers The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published

More information

Design and Analysis of Double Gate MOSFET Devices using High-k Dielectric

Design and Analysis of Double Gate MOSFET Devices using High-k Dielectric International Journal of Electrical Engineering. ISSN 0974-2158 Volume 7, Number 1 (2014), pp. 53-60 International Research Publication House http://www.irphouse.com Design and Analysis of Double Gate

More information

The 3 D Tri Gate transistor is a variant of the FinFET developed at UC Berkeley, and is being used in Intel s 22nmgeneration. microprocessors.

The 3 D Tri Gate transistor is a variant of the FinFET developed at UC Berkeley, and is being used in Intel s 22nmgeneration. microprocessors. On May 4, 2011, Intel Corporation announced what it called the most radical shift in semiconductor technology in 50 years. A new 3 dimensional transistor design will enable the production of integrated

More information

Co Capping Layers for Cu/Low-k Interconnects

Co Capping Layers for Cu/Low-k Interconnects IBM Research Co Capping Layers for /Low-k Interconnects Chih-Chao Yang IBM ChihChao@us.ibm.com Co-Authors: International Business Machines Corp. P. Flaitz, B. Li, F. Chen, C. Christiansen, and D. Edelstein

More information

Digital Integrated Circuit Design I ECE 425/525 Chapter 3

Digital Integrated Circuit Design I ECE 425/525 Chapter 3 Digital Integrated Circuit Design I ECE 425/525 Chapter 3 Professor R. Daasch Depar tment of Electrical and Computer Engineering Portland State University Portland, OR 97207-0751 (daasch@ece.pdx.edu) http://ece.pdx.edu/~ecex25

More information

64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array

64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 69 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array Roland Jäger and Christian Jung We have designed and fabricated

More information

21 st Annual Needham Growth Conference

21 st Annual Needham Growth Conference 21 st Annual Needham Growth Conference Investor Presentation January 15, 2019 Safe Harbor Statement The information contained in and discussed during this presentation may include forward-looking statements

More information

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3 Basics Semiconductor Devices and Processing Chapter 3 Basics Semiconductor Devices and Processing 1 Objectives Identify at least two semiconductor materials from the periodic table of elements List n-type and p-type dopants Describe a diode and

More information

High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors

High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors Veerendra Dhyani 1, and Samaresh Das 1* 1 Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi-110016,

More information

Chapter 3. Digital Integrated Circuit Design I. ECE 425/525 Chapter 3. Substrates in MOS doped n or p type Silicon (Chemical.

Chapter 3. Digital Integrated Circuit Design I. ECE 425/525 Chapter 3. Substrates in MOS doped n or p type Silicon (Chemical. Digital Integrated Circuit Design I ECE 425/525 Professor R. Daasch Depar tment of Electrical and Computer Engineering Portland State University Portland, OR 97207-0751 (daasch@ece.pdx.edu) http://ece.pdx.edu/~ecex25

More information

2014, IJARCSSE All Rights Reserved Page 1352

2014, IJARCSSE All Rights Reserved Page 1352 Volume 4, Issue 3, March 2014 ISSN: 2277 128X International Journal of Advanced Research in Computer Science and Software Engineering Research Paper Available online at: www.ijarcsse.com Double Gate N-MOSFET

More information

Alternatives to standard MOSFETs. What problems are we really trying to solve?

Alternatives to standard MOSFETs. What problems are we really trying to solve? Alternatives to standard MOSFETs A number of alternative FET schemes have been proposed, with an eye toward scaling up to the 10 nm node. Modifications to the standard MOSFET include: Silicon-in-insulator

More information

International Center on Design for Nanotechnology Workshop August, 2006 Hangzhou, Zhejiang, P. R. China

International Center on Design for Nanotechnology Workshop August, 2006 Hangzhou, Zhejiang, P. R. China Challenges and opportunities for Designs in Nanotechnologies International Center on Design for Nanotechnology Workshop August, 2006 Hangzhou, Zhejiang, P. R. China Sankar Basu Program Director Computing

More information

ADVANCED MATERIALS AND PROCESSES FOR NANOMETER-SCALE FINFETS

ADVANCED MATERIALS AND PROCESSES FOR NANOMETER-SCALE FINFETS ADVANCED MATERIALS AND PROCESSES FOR NANOMETER-SCALE FINFETS Tsu-Jae King, Yang-Kyu Choi, Pushkar Ranade^ and Leland Chang Electrical Engineering and Computer Sciences Dept., ^Materials Science and Engineering

More information

Thermal Management in the 3D-SiP World of the Future

Thermal Management in the 3D-SiP World of the Future Thermal Management in the 3D-SiP World of the Future Presented by W. R. Bottoms March 181 th, 2013 Smaller, More Powerful Portable Devices Are Driving Up Power Density Power (both power delivery and power

More information

450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D

450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D 450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D Doug Anberg VP, Technical Marketing Ultratech SOKUDO Lithography Breakfast Forum July 10, 2013 Agenda Next Generation Technology

More information

Transistor Scaling in the Innovation Era. Mark Bohr Intel Senior Fellow Logic Technology Development August 15, 2011

Transistor Scaling in the Innovation Era. Mark Bohr Intel Senior Fellow Logic Technology Development August 15, 2011 Transistor Scaling in the Innovation Era Mark Bohr Intel Senior Fellow Logic Technology Development August 15, 2011 MOSFET Scaling Device or Circuit Parameter Scaling Factor Device dimension tox, L, W

More information

Analysis and Processing of Power Output Signal of 200V Power Devices

Analysis and Processing of Power Output Signal of 200V Power Devices doi: 10.14355/ie.2015.03.005 Analysis and Processing of Power Output Signal of 200V Power Devices Cheng-Yen Wu 1, Hsin-Chiang You* 2, Chen-Chung Liu 3, Wen-Luh Yang 4 1 Ph.D. Program of Electrical and

More information

CMP for More Than Moore

CMP for More Than Moore 2009 Levitronix Conference on CMP Gerfried Zwicker Fraunhofer Institute for Silicon Technology ISIT Itzehoe, Germany gerfried.zwicker@isit.fraunhofer.de Contents Moore s Law and More Than Moore Comparison:

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices - 2014 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 3 th of Feb 14 MOSFET Unmodified Channel

More information

III-V on Si for VLSI. 200 mm III-V on Si. Accelerating the next technology revolution. III-V nfet on 200 mm Si

III-V on Si for VLSI. 200 mm III-V on Si. Accelerating the next technology revolution. III-V nfet on 200 mm Si III-V on Si for VLSI Accelerating the next technology revolution 200 mm III-V on Si III-V nfet on 200 mm Si R. Hill, C. Park, J. Barnett, J. Huang, N. Goel, J. Oh, W.Y. Loh, J. Price, P. Kirsch, P, Majhi,

More information

Title: Expand with ROHM ROHM CO., LTD.

Title: Expand with ROHM ROHM CO., LTD. Title: Expand with ROHM ROHM CO., LTD. c 2009 ROHM Co., Ltd. All Rights Reserved Sales by Product Category (Consolidated) 500 (Billions of Yen) 400 300 Passive Components Displays 3,600 9% 10% 4,093 8%

More information

Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018

Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018 Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018 ECE 658 Sp 2018 Semiconductor Materials and Device Characterizations OUTLINE Background FinFET Future Roadmap Keeping up w/ Moore s Law

More information

45nm Foundry CMOS with Mask-Lite Reduced Mask Costs

45nm Foundry CMOS with Mask-Lite Reduced Mask Costs This work is sponsored in part by the Air Force Research Laboratory (AFRL/RVSE) 45nm Foundry CMOS with Mask-Lite Reduced Mask Costs 21 March 2012 This work is sponsored in part by the National Aeronautics

More information

ASCENT Overview. European Nanoelectronics Infrastructure Access. MOS-AK Workshop, Infineon, Munich, 13 th March 2018.

ASCENT Overview. European Nanoelectronics Infrastructure Access. MOS-AK Workshop, Infineon, Munich, 13 th March 2018. ASCENT Overview MOS-AK Workshop, Infineon, Munich, 13 th March 2018 European Nanoelectronics Infrastructure Access Paul Roseingrave The Challenge Cost/performance returns by scaling are diminishing Cost

More information

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1 Topics What is semiconductor Basic semiconductor devices Basics of IC processing CMOS technologies 2006/9/27 2 1 What is Semiconductor

More information

y y (12) Patent Application Publication (10) Pub. No.: US 2015/ A1 (19) United States (43) Pub. Date: Sep. 10, C 410C 422b 4200

y y (12) Patent Application Publication (10) Pub. No.: US 2015/ A1 (19) United States (43) Pub. Date: Sep. 10, C 410C 422b 4200 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2015/0255300 A1 He et al. US 201502553.00A1 (43) Pub. Date: Sep. 10, 2015 (54) (71) (72) (73) (21) (22) DENSELY SPACED FINS FOR

More information

FOR SEMICONDUCTORS 2007 EDITION

FOR SEMICONDUCTORS 2007 EDITION INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 2007 EDITION INTERCONNECT THE ITRS IS DEVISED AND INTENDED FOR TECHNOLOGY ASSESSMENT ONLY AND IS WITHOUT REGARD TO ANY COMMERCIAL CONSIDERATIONS PERTAINING

More information

Intel s Breakthrough in High-K Gate Dielectric Drives Moore s Law Well into the Future

Intel s Breakthrough in High-K Gate Dielectric Drives Moore s Law Well into the Future Page 1 Intel s Breakthrough in High-K Gate Dielectric Drives Moore s Law Well into the Future Robert S. Chau Intel Fellow, Technology and Manufacturing Group Director, Transistor Research Intel Corporation

More information

Legacy & Leading Edge Both are Winners

Legacy & Leading Edge Both are Winners Legacy & Leading Edge Both are Winners Semicon CMP User Group July 16, 2015 Sue Davis 408-833-5905 CMP Team Contributors: Mike Fury, Ph.D. Karey Holland, Ph.D. Jerry Yang, Ph.D. www.techcet.com 1 Outline

More information

N-channel Junction-less Vertical Slit Field-Effect Transistor (VeSFET): Fabrication-based Feasibility Assessment

N-channel Junction-less Vertical Slit Field-Effect Transistor (VeSFET): Fabrication-based Feasibility Assessment 2012 International Conference on Solid-State and Integrated Circuit (ICSIC 2012) IPCSIT vol. 32 (2012) (2012) IACSIT Press, Singapore N-channel Junction-less Vertical Slit Field-Effect Transistor (VeSFET):

More information

Lecture 0: Introduction

Lecture 0: Introduction Lecture 0: Introduction Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor Fast, cheap, low power

More information

A New Era in Nanotechnology Research: The Industry-University-Government Cooperative Model

A New Era in Nanotechnology Research: The Industry-University-Government Cooperative Model A New Era in Nanotechnology Research: The Industry-University-Government Cooperative Model May 18, 2010 AVP Business Development, Alliances and Consortia Professor of Nanoengineering IBM Distinguished

More information

End-of-line Standard Substrates For the Characterization of organic

End-of-line Standard Substrates For the Characterization of organic FRAUNHOFER INSTITUTe FoR Photonic Microsystems IPMS End-of-line Standard Substrates For the Characterization of organic semiconductor Materials Over the last few years, organic electronics have become

More information

MAPPER: High throughput Maskless Lithography

MAPPER: High throughput Maskless Lithography MAPPER: High throughput Maskless Lithography Marco Wieland CEA- Leti Alterative Lithography workshop 1 Today s agenda Introduction Applications Qualification of on-tool metrology by in-resist metrology

More information

Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator

Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator Jianqiang Lin, Dimitri A. Antoniadis, and Jesús A. del Alamo Microsystems Technology Laboratories,

More information

LSI Logic LSI53C1030 PCI-X to Dual Channel Ultra320 SCSI Controller 0.18 µm CMOS Process

LSI Logic LSI53C1030 PCI-X to Dual Channel Ultra320 SCSI Controller 0.18 µm CMOS Process LSI Logic LSI53C13 PCI-X to Dual Channel Ultra32 SCSI Controller.18 µm CMOS Process Structural Analysis For comments, questions, or more information about this report, or for any additional technical needs

More information

Photolithography I ( Part 1 )

Photolithography I ( Part 1 ) 1 Photolithography I ( Part 1 ) Chapter 13 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Bjørn-Ove Fimland, Department of Electronics and Telecommunication, Norwegian University of Science

More information

Course Outcome of M.Tech (VLSI Design)

Course Outcome of M.Tech (VLSI Design) Course Outcome of M.Tech (VLSI Design) PVL108: Device Physics and Technology The students are able to: 1. Understand the basic physics of semiconductor devices and the basics theory of PN junction. 2.

More information

45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11. Process-induced Variability I: Random

45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11. Process-induced Variability I: Random 45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11 Process-induced Variability I: Random Random Variability Sources and Characterization Comparisons of Different MOSFET

More information

More Imaging Luc De Mey - CEO - CMOSIS SA

More Imaging Luc De Mey - CEO - CMOSIS SA More Imaging Luc De Mey - CEO - CMOSIS SA Annual Review / June 28, 2011 More Imaging CMOSIS: Vision & Mission CMOSIS s Business Concept On-Going R&D: More Imaging CMOSIS s Vision Image capture is a key

More information

Progress due to: Feature size reduction - 0.7X/3 years (Moore s Law). Increasing chip size - 16% per year. Creativity in implementing functions.

Progress due to: Feature size reduction - 0.7X/3 years (Moore s Law). Increasing chip size - 16% per year. Creativity in implementing functions. Introduction - Chapter 1 Evolution of IC Fabrication 1960 and 1990 integrated t circuits. it Progress due to: Feature size reduction - 0.7X/3 years (Moore s Law). Increasing chip size - 16% per year. Creativity

More information

SAMPLE SLIDES & COURSE OUTLINE. Core Competency In Semiconductor Technology: 2. FABRICATION. Dr. Theodore (Ted) Dellin

SAMPLE SLIDES & COURSE OUTLINE. Core Competency In Semiconductor Technology: 2. FABRICATION. Dr. Theodore (Ted) Dellin & Digging Deeper Devices, Fabrication & Reliability For More Info:.com or email Dellin@ieee.org SAMPLE SLIDES & COURSE OUTLINE In : 2. A Easy, Effective, of How Devices Are.. Recommended for everyone who

More information