Outline. Introduction on IMEC & IMEC cooperation model. Program Challenges in CMOS scaling

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2 The Role of European Research Institutes in the 450mm Wafer Transition Process IMEC nanoelectronics platform A Collaborative approach towards 450mm R&D IMEC March 2009

3 Outline Introduction on IMEC & IMEC cooperation model Program Challenges in CMOS scaling imec: Today, and path into the future for 450mm European landscape 450mm Conclusions imec

4 Resolution, "Shrink" [nm] Jan-02 Jan-03 Jan-04 Jan-05 Huge R&D challenge Year of Production Start Jan-06 DRAM Jan-07 Jan-08 Jan-09 Logic Jan-10 Jan-11 Jan-12 NAND Flash Jan-13 Jan-14 Relentless reduction of feature size 2D scaling Need for R&D has never been as high Cost of R&D is rapidly increasing Explosion of CAGR New Materials semiconductor industry: 5-7% in Advanced R&D Devices cost increase per node: 20-30% Outsourcing of R&D to shared R&D platforms Increased use of 3 rd dimension 3D scaling Luc Van den hove imec

5 Partnering for Cost-effective Research Logic IDM Memory IDM Foundries Equipment Suppliers World-wide Build critical mass Centralized Research Share R&D Platform cost Fablite Fabless Regional Government Europe Material Suppliers Luc Van den hove imec

6 IMEC Partner Update 2009Q1 Luc Van den hove imec

7 IMEC Partner Update 2009Q1 Partnerships in core Program IIAP s The World s Largest Industry Commitment to Semiconductor Research in Partnership Lam RESEARCH Luc Van den hove imec

8 IMEC s total revenue (P&L) versus research grant 250 M 2008 revenue: 270 M (est.) 270M Estimated for M Flemish Government Revenue (P&L) imec

9 Outline Introduction on IMEC & IMEC cooperation model Program Challenges in CMOS scaling imec: Today, and path into the future for 450mm European landscape 450mm Conclusions Luc Van den hove imec

10 CMOS scaling Scaling ArF + RET ArF immersion Double Patterning time EUVL Luc Van den hove imec

11 Full field scanner plan ASML XT:1250i NA=0.85 ASML XT:1250 dry NA=0.85 Immersion DPT ASML XT:1700i, NA=1.2 ASML XT:1900i, NA=1.35 Interference printer, NA>1.4 EUVL ASML EUVL α-tool, NA=0.25 ASML EUV Pre-Prod-Tool IMEC intends to continue its leadership in advanced lithography, in immersion as well as EUV, based on an early tool roadmap and proximity collaboration with ASML Luc Van den hove imec

12 EUV lithography Luc Van den hove imec

13 CMOS scaling Ge/IIIV nanowires graphene ArF + RET FinFET metal gate ArF immersion 25 nm HfO 2 high -κ NiSi NiSi FUSI USJ strain Double Patterning silicide time EUVL Luc Van den hove imec

14 CMOS scaling graphene nanowires Ge/IIIV ArF + RET USJ ArF immersion strain NiSi NiSi FUSI 25 nm HfO 2 high -κ metal gate Double Patterning FinFET High-κ, Metal Gate Non-planar devices 16 and beyond High-µ materials, New devices silicide >= Strain, USJ time EUVL Luc Van den hove imec

15 CMOS scaling graphene nanowires 32nm: High-k / metal gate integration Ge/IIIV ArF + RET Gate first Lg=32nm USJ ArF immersion strain Delay/stage [ps] NiSi NiSi 18 FUSI nm HfO 2 high -κ metal gate FET65 (Poly/SiON) FUSI_HiK 8 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 Double Patterning FinFET High-κ, P static [W/stage] Metal Gate RO performance MIPS SMDD (Bulk Planar) MIPS psmdd (Bulk Planar) Non-planar devices NMOS nmos pmos RO (SMDD) 16 and beyond High-µ materials, New PMOS devices silicide >= Strain, USJ time EUVL Luc Van den hove imec

16 CMOS scaling NiSi poly-si Fin 22nm: FinFET Device graphene 50 nm SOI FF Ge/IIIV nanowires ArF + RET USJ ArF immersion strain NiSi NiSi FUSI 25 nm HfO 2 high -κ metal gate Double Patterning FinFET High-κ, Metal Gate Bulk FF Non-planar devices 16 and beyond High-µ materials, 10 New devices silicide >= Strain, USJ time EUVL Luc Van den hove imec

17 CMOS scaling New materials and devices will be needed to continue the performance scaling Ge/IIIV nanowires graphene ArF + RET USJ ArF immersion strain NiSi NiSi FUSI 25 nm HfO 2 high -κ metal gate Double Patterning FinFET High-κ, Metal Gate Non-planar devices 16 and beyond High-µ materials, New devices silicide >= Strain, USJ time EUVL Luc Van den hove imec

18 NVM Roadmap Cell size [F 2 ] Phase Change Memory evolutionary disruptive 100 Most mature Embedded memory - NOR replacement? FeRAM MRAM niche and embedded applications Spin-based probe memories 10 NOR-Flash (FG/NROM) PCM code 5 TANOS NAND-Flash (FG) RRAM? data x 4x 3x Resistive Switching RAM 2x 1x Technology node F [nm] note: PCM may be applied in embedded applications as well (65nm) OFF R High ON R Low Luc Low Van den hove imec

19 CMOS scaling CNT Air gap 3D TSV graphene 3D SIP Ge/IIIV nanowires Low k k=2.7 Low k k=2.5 metal gate FinFET Low k k= nm HfO 2 high -κ Cu NiSi NiSi FUSI strain USJ silicide time Luc Van den hove imec

20 3D Integration Carrier R&D die Roadmap 3 rd stacked die 3D Interconnect Complexity 3D-SIC 3D-WLP Face-to-Face Flip-Chip Stacked-IC Package 2 nd stacked die 1 st stacked die Landing die Ultra-Thin-Chip Embedding 2-layer UTCS Face-to-Face Micro-bumps 3D-SIP BGA 3D-SIC 2-layer Chip-in-Flex UTCF 3D-WLP 2-layer Through-Si 3D-SIP CSP 3D-SIC N-layer N-layer UTCS 3D-WLP N-layer 3DSIP Die-in-board N-layer UTCS 3D-SIC N-layer UTCS 3D-WLP 3D-SIP A D V A N C E D P A C K A G I N G A N D I N T E R C O N N E C T Research Roadmap 2010 Luc Van den hove imec

21 Global R&D platforms Providing focus for universities and basic insight and solutions for industrial partners Time frame Longer term, many options Shorter term, applications Universities Shared R&D Platforms Industry Lower R&D cost Higher imec

22 Outline Introduction on IMEC & IMEC cooperation model Program Challenges in CMOS scaling imec: Today, and path into the future for 450mm European landscape 450mm Conclusions imec

23 One of the world s most advanced state-of-the-art research facilities Fully operational since July 2006 (~ 500M ) imec

24 Clean Room m 2 Clean Room 300 mm pilot line Ball Room, Clean sub-fab Continuous operation: 24hrs / 7 days IMECAMPUS Clean Room m 2 Clean Room 1750 m 2 Class mm pilot line Continuous operation: 24hrs / 7 days Total: 8000 m 2 Clean Room imec

25 Clean Room m 2 Clean Room 300 mm pilot line Ball Room, Clean sub-fab Continuous operation: 24hrs / 7 days 300mm most advanced scaling R&D IMECAMPUS Total: 8000 m 2 Clean Room imec

26 IMECAMPUS R&D and Prototyping Facility Heterogeneous SOC & SIP Clean Room m 2 Clean Room 1750 m 2 Class mm pilot line Continuous operation: 24hrs / 7 days Total: 8000 m 2 Clean Room imec

27 R&D benefits from gradual transistions example: IIAP processing 200 > 300mm imec

28 An affordable path to 450 mm IMEC s core competence is Process and Device R&D using state-of-the-art processing equipment, including several α- and β-type tools; with world-class operational excellence (cycle time, process quality, process stability, ) with best-in-class fundamental research (materials research, physical characterization, advanced electrical characterziation, ) IMEC plans to continue full integrated process R&D using its 300mm infrastructure during the following years and will therefore further expand its 300mm research infrastructure accordingly IMEC is also expanding its infrastructure to test early 450mm equipment, as soon as requested by its leading partners (preparing for partner pilot lines in 2012) imec

29 FAB m 2 Clean Room 300 mm pilot line Ball Room, Clean sub-fab Continuous operation: 24hrs / 7 days IMECAMPUS Expansion project Clean room Office building (First phase initiated) FAB m 2 Clean Room 1750 m 2 Class mm pilot line Continuous operation: 24hrs / 7 days Total: 8000 m 2 Clean Room imec

30 Concept view Expansion CMORE program Expansion Bio-electronics Lab Expansion Energy (PV) program Expansion 450mm test facility Office Building imec

31 An affordable path to 450 mm IMEC has received approval from the local government for financial support for FAB2 build-out on November 7 th, 2008; Board approval was obtained on November 26 th, 2008: IMEC will start construction in March 2009 (Central Utility Building is available) Timing construction project: Start engineering study: Jan 1, 2008 Start construction: March 2009 End construction: April 2010 imec

32 Construction started on March 17 th, 2009 imec

33 IMEC Clean Room Extension Existing Building Extension clean elevator EUV tool height Plenum 2800 Corridor - Steel Plattform 5800 Lab Cleanroom Make Up Air duct Option: Hoist in the corridor imec

34 An affordable path to 450 mm Planning & decision process Building construction & Facility Preparation Jan 2008 March 2009: Start construction Mid 2010: Construction ready imec

35 An affordable path to 450 mm Engineering Phase 1 Engineering Phase 2 Building construction & Facility Preparation 300 mm process & device research Generic 450 mm modules 450mm Module 1 450mm Module 2 450mm Module 3 imec

36 3-phase program concept for worldwide cooperation towards viable 450mm Assumptions: Economical downturn will affect timeline; timeline will depend on initiative of key IC industry players; R&D should be ready to respond; More than ever, precompetitive R&D is best and most efficient to be done on a central location, shielded from development or production targets 450mm will require new models regarding infrastructure related cooperation; IMEC is interested to take part in this discussion imec

37 3-phase program concept for worldwide cooperation towards viable 450mm mm+ process & device Leuven Leuven-based IMEC network with partners Including build-up of Generic 450 mm modules + + IMEC IMEC Company A? Company B? Program based 300/450 oriented cooperation with industrial partner (or JV, cluster ) and supporting government in locally hosted infrastructure Leuven-based IMEC network with partners 450mm fab with interested partners R&D in new dedicated 450mm infrastructure (EU, TW, JP, US ) 450mm R&D platform requiring new concept - integrated cooperative program Luc Van den hove imec

38 Outline Introduction on IMEC & IMEC cooperation model Program Challenges in CMOS scaling imec: Today, and path into the future for 450mm European landscape 450mm Conclusions imec

39 450mm Views from European R&D

40 Fraunhofer views 42

41 CEA-LETI & 450mm Michel BRILLOUËT CEA Tous droits réservés. Toute reproduction totale ou partielle sur quelque support que ce soit ou utilisation du contenu de ce document est interditesans l autorisation écrite préalable du CEA All rights reserved. Any reproduction in whole or in part on any medium or use of the information contained herein is prohibited without the prior written consent of CEA 450mm, Brussels - Dec. 19, M Brillouët 43

42 CEA-LETI ready to contribute in 450mm CEA-LETI active in the whole value chain engineered substrates process devices applications which translates 2007 for 450mm in a strong involvement significant contribution (esp. in FEOL & ML2) use for a later development phase when our industrial partners need 450mm independent of wafer diameter CEA Tous droits réservés. Toute reproduction totale ou partielle sur quelque support que ce soit ou utilisation du contenu de ce document est interditesans l autorisation écrite préalable du CEA All rights reserved. Any reproduction in whole or in part on any medium or use of the information contained herein is prohibited without the prior written consent of CEA 450mm, Brussels - Dec. 19, M Brillouët 44

43 with the associated research infrastructure Planned extension for large area substrates 2007 Potential doubling Present mm clean rooms buildings CEA Tous droits réservés. Toute reproduction totale ou partielle sur quelque support que ce soit ou utilisation du contenu de ce document est interditesans l autorisation écrite préalable du CEA All rights reserved. Any reproduction in whole or in part on any medium or use of the information contained herein is prohibited without the prior written consent of CEA 450mm, Brussels - Dec. 19, M Brillouët 45

44 as a part of the project 3,500 6,000 + m² clean rooms 2007 CEA Tous droits réservés. Toute reproduction totale ou partielle sur quelque support que ce soit ou utilisation du contenu de ce document est interditesans l autorisation écrite préalable du CEA All rights reserved. Any reproduction in whole or in part on any medium or use of the information contained herein is prohibited without the prior written consent of CEA 450mm, Brussels - Dec. 19, M Brillouët 46

45 Outline Introduction on IMEC & IMEC cooperation model Program Challenges in CMOS scaling imec: Today, and path into the future for 450mm European landscape 450mm Conclusions imec

46 View from European R&D on 450mm R&D institutes are preparing to be ready will carefully listen and interact with industry for timelines and priority setting R&D institutes discuss cooperation Will share key infrastructure and run complementary programs R&D institutes have role for local industry To help European semiconductor industry in their strategy to be part of worldwide 450mm effort when it happens 2007 R&D institutes will strive for efficiency Via efficient R&D models combining 300mm/450mm 450mm sets for New Cooperation models CEA Tous droits réservés. Toute reproduction totale ou partielle sur quelque support que ce soit ou utilisation du contenu de ce document est interditesans l autorisation écrite préalable du CEA All rights reserved. Any reproduction in whole or in part on any medium or use of the information contained herein is prohibited without the prior written consent of CEA 450mm, Brussels - Dec. 19, M Brillouët 48

47 Concept view 450mm READY imec

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