Title: Expand with ROHM ROHM CO., LTD.

Transcription

1 Title: Expand with ROHM ROHM CO., LTD. c 2009 ROHM Co., Ltd. All Rights Reserved

2 Sales by Product Category (Consolidated) 500 (Billions of Yen) Passive Components Displays 3,600 9% 10% 4,093 8% 10% 3,212 8% 9% 3,502 7% 9% 3,556 7% 10% 3,690 6% 12% 3,877 6% 11% 3,950 6% 10% 3,734 6% 8% 200 Discrete Semiconductor 40% 39% 38% 39% 39% 39% 39% 40% 42% 100 Integrated Circuits 41% 43% 45% 45% 44% 43% 44% 44% 44% /3 2001/3 2002/3 2003/3 2004/3 2005/3 2006/3 2007/3 2008/3

3 R&D Headquarters IPM IPM Project Project SiC SiC Interigent Interigent Power Power Modules Modules LSI Operation HQs New New Material Material R&D R&D New New Functional Functional Composite Composite Device Device Development Development Team Team Multi-Functional Multi-Functional Interdisciplinary Interdisciplinary on on LSI LSI R&D R&D KTC LSI Dev. HQs Technology Technology Fusion Fusion Nano-Bionics Nano-Bionics R&D R&D Health Health Care Care Chips, Chips, Bio Bio Chips Chips ROHM R&D Headquarters Photonics Photonics R&D R&D Optical Optical Communication Communication,, Nano Nano Display Display R&D R&D Organic Organic ELD, ELD, Lighting Lighting FED FED Advanced Advanced Compound Compound Semiconductors Semiconductors R&D R&D New New Functional Functional Optical Optical / / Electronic Electronic

4 ROHM s s Development System c 2009 ROHM Co., Ltd. All Rights Reserved

5 Innovation produces profit! c 2009 ROHM Co., Ltd. All Rights Reserved

6 The strategic direction of semiconductor devices More Moore Next Generation Lithography Si-CMOS New Structure Tr High-k Gate Materials Low-k ILD More than Moore Differentiation Additional value Improvements by Higher-Integration ROHM R&D Headquarters Ultra Shallow Doping Strain Si Metal Gate Design for High-speed Design for Low-power Projects, such as ASKA and MIRAI, are advancing + α New function realized by applying new materials to LSIs New devices fabricated by combining different technology fields

7 The composite device by different field technical fusion Si tech. + New materials / different field tech. Composite! Electron/Photo/Force/Thermo/Bio/ Fusion Integration Display / Luminescence (LCD, EL, LD, LED) + LSI Photo acceptance unit (PD, CCD, CMOS I.C.) + LSI MEMS/Biochemical (Sensor, Actuator, ) + LSI Signal transfer media Electron Diversification Photon Vital reaction Optical integrated circuit Biochip

8 Example for TOP DOWN Type Collaboration RAMTRON Plasma System Tegal Tohoku Univ. Pat., Basic Tech. Basic Materials and Processes Osaka Univ. Materials Production Chubu Univ. Tanaka Kikinzoku Racom Kanto Chemical RAMTRON Mitsubishi Material Research Network for Ferroeletric Memory tech. ULVAC Equipments Hyogo Prefecture Univ. Kyoto Univ. INTAG Chip area: 70% reduction, Power consumption: 50% reduction Features of FeRAM Production level Non-volatile Limited read cycle (actually unlimited) High speed (<50ns) Ultra low power The first in the world mass production success BL2 (y2) BL1 (y1) FeRAM Circuit merged logic and storage functions Ferroelectric-based functional pass-gate CLK Cs CLK S Cp V S RS ML(z)

9 Changes of R&D Organization From the beginning of R&D process Technology Technology Technology Marketing Marketing Business Ivory-tower research Research which cooperated with the manufacturing division Research taken into the business models

10 Academia-Industry Partnership Ritsumeikan University ROHM Plaza (from April 2000) Doshisha University ROHM Plaza (from September 2003) Kyoto University ROHM Plaza (from May 2005) (Biwako Kusatsu campus, Shiga) Next generation VLSI development (Kyotanabe campus, Kyoto) Raising future leaders of multimedia software (Katsura campus, Kyoto) Comprehensive industry- university alliance Exhibitions catering to students Events and exhibitions are held introducing ROHM technology and manufacturing via panels and demos.

11 TSINGHUA-ROHM ELECTRONIC ENGINEERING HALL TSINGHUA-ROHM ELECTRONIC ENGINEERING HALL Plans call for TSINGHUA-ROHM ELECTRONIC ENGINEERING HALL to be constructed on Tsinghua University s campus, to which the well-equipped research and development facility will bring such features as an international exchange center dedicated to promoting international collaboration between industry and academia, clean room space for the development of semiconductor devices, space for advanced LSI study and research, space for joint research by Tsinghua University and ROHM, and a 300-seat hall for academic presentations.

12 R&D inclusive agreement between ROHM and Kyoto Univ. R&D theme R&D of advanced technology for devices with new function and high performance - R&D of wide gap semiconductor: SiC - Research of post MOSFET function memory New generation technology development for future optical devices - Development of optical device using photonic crystal - R&D of ZnO system compound semiconductor - R&D of GaN system compound semiconductor - Development of electrode material for compound semiconductor device

13 The style of new strategic industry-university university cooperation (Cross-industrial association inclusive industry-university university fusion alliance) Technology ROHM HITACHI IPs are co-owned. owned. Prof. Other Univ. /Research org. Technology Marketing NTT Research field (assigned by key-word) Prof. Technology Marketing Business MITSUBISHI Chemical Pioneer Theme will be Born by the merge of different abilities!! Ass. Prof. Researcher Other Univ. /Research org. Social science and human sciences are also necessary. Team formed by different field industries Kyoto Univ.