GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 405

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 45 Wesentliche Merkmale GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit

1 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 45 Wesentliche Merkmale GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit SFH 35 Miniatur-Gehäuse Anwendungen Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb Barcodeleser Industrieelektronik Messen/Steuern/Regeln Sensorik Drehzahlsteuerung Features GaAs infrared emitting diode High reliability Available in groups Same package as SFH 35 Miniature package Applications Miniature photointerrupters Barcode readers Industrial electronics For control and drive ciruits Sensor technology Speed controller Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 45 Q6272P835 Miniatur-Leiterbandgehäuse, klares Epoxy-Gießharz, linsenförmig, Anschluß im 2.54-mm-Raster ( / ), Kathodenkennzeichnung: abgeschrägte Anschlüsse Miniature lead frame, transparent epoxy resin, solder tabs lead spacing 2.54 mm ( / ), cathode marking: bevelled leads

2 SFH 45 Grenzwerte (T A = 25 C) Maximum Ratings Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, τ µs, D = Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Wert Value T op ; T stg C V R 5 V I F 4 ma I FSM.6 A P tot 65 mw R thja 95 R thjl 85 K/W K/W Kennwerte (T A = 25 C) Characteristics Wellenlänge der Strahlung Wavelength at peak emission I F = 4 ma, t p = 2 ms Spektrale Bandbreite bei 5% von I max Spectral bandwidth at 5% of I max I F = 5 ma, t p = 2 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimensions of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip surface to lens top Schaltzeiten, I e von % auf 9% und von 9% auf %, bei I F = 4 ma, R L = 5 Ω Switching times, Ι e from % to 9% and from 9% to%, I F = 4 ma, R L = 5 Ω Wert Value λ peak 95 nm λ 55 nm ϕ ± 6 Grad deg. A.25 mm 2 L B L W.5.5 mm H.3.9 mm t r, t f µs

3 SFH 45 Kennwerte (T A = 25 C) Characteristics (cont d) Kapazität, Capacitance V R = V, f = MHz Durchlassspannung Forward voltage I F = 4 ma Sperrstrom Reverse current V R = 5 V Gesamtstrahlungsfluss Total radiant flux I F = 4 ma, t p = 2 ms Temperaturkoeffizient von I e bzw. Φ e, I F = 4 ma Temperature coefficient of I e or Φ e, I F = 4 ma Temperaturkoeffizient von V F, I F = 4 ma Temperature coefficient of V F, I F = 4 ma Temperaturkoeffizient von λ peak, I F = 4 ma Temperature coefficient of λ peak, I F = 4 ma Wert Value C o 4 pf V F.25 (.4) V I R. ( ) µa Φ e 7 mw TC I.55 %/K TC V.5 mv/k TC λ +.3 nm/k Strahlstärke I e in Achsrichtung gemessen bei einem Raumwinkel Ω =. sr Radiant Intensity I e in Axial Direction at a solid angle of Ω =. sr Werte Values Strahlstärke Radiant intensity I F = 4 ma, t p = 2 ms I e 2.5 (>.6) mw/sr

4 SFH 45 Relative Spectral Emission I rel = f (λ) Ι rel % 8 6 OHRD938 Radiant Intensity Single pulse, t p = 2 µs 2 Ι e Ι e ( ma) Ι e Ι e ma = f (I F ) OHR39 Max. Permissible Forward Current I F = f (T A ) 5 ma 4 3 OHR R thja = 95 K/W = 85 K/W R thjl nm 6 λ Forward Current I F = f (V F ), Single pulse, t p = 2 µs A Ι Permissible Pulse Handling Capability I F = f (τ), T A = 25 C, duty cycle D = parameter F C TA, T L A typ. max. OHR42 A,5, D =,5,,2 τ T D = τ T OHR283,2 - -,5 DC V 4.5 VF Radiation Characteristics Ι rel = f (ϕ) τ OHR886 ϕ

5 SFH 45 Maßzeichnung Package Outlines.5.9 ) spacing Collector (SFH 35) Cathode (SFH 45) ) Detaching area for tools, flash not true to size. GEO637 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch)

6 SFH 45 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C. Welle. wave s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY598 5 ca 2 K/s 5 K/s 2 K/s C... 3 C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

This data sheet is under PCN-revision (see separate data sheet with respect to OS-PCN A). Do not use this version for design-in

NPN-Silizium-Fototransistor in SMT-Gehäuse mit Linse Silicon NPN Phototransistor in SMT-Package with lens Lead (Pb) Free Product - RoHS Compliant SFH 3219 This data sheet is under PCN-revision (see separate