A8436. Photoflash Capacitor Charger with IGBT Driver

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1 Feaures and Benefis Power wih 1 Li+ or Alkaline/NiMH/NiCAD baeries Adjusable oupu volage >75% efficiency Three levels of swich curren limi: 1.0, 1., 1.4 A Fas charge ime Charge complee indicaion Inegraed IGBT driver wih rigger No primary-side Schoky diode needed Low-profile packages Packages: TDFN/MLP (suffix EJ) -pin, 3 mm 3 mm 0.75 mm nominal overall heigh Approximae Scale 1:1 MSOP (suffix LZ) -pin, 3 mm 3 mm 1. mm maximum overall heigh Descripion The A8436 is a highly inegraed IC ha charges phooflash capaciors for digial and film cameras. I also feaures an inegraed IGBT driver ha faciliaes he flash discharge funcion and saves board space. To charge he phooflash capacior, he A8436 inegraes a 40 V, DMOS swich ha drives he ransformer in a flyback opology, allowing opimized design wih igh coupling and high efficiency. A proprieary conrol scheme opimizes he capacior charging ime. Low quiescen curren and low shudown curren furher improve sysem efficiency and exend baery life. Three levels of swich curren limi are provided: 1.0, 1., and 1.4 A. The level is deermined by configuring he ILIM pin as grounded, floaing, or pulled up o IC supply volage, respecively. The CHARGE pin enables he A8436 and sars he charging of he oupu capacior. When he designaed oupu volage is reached, he A8436 sops he charging unil he CHARGE pin is oggled again. Pulling he CHARGE pin low sops charging. The D Ō N Ē pin is an open-drain indicaor of when he designaed oupu volage is reached. The A8436 can be used wih wo Alkaline/NiMH/NiCAD or one single-cell Li+ baery conneced o he ransformer primary. Connec he VIN pin o a 3.0 o 5.5 V supply, which can be eiher he sysem rail or he Li+ baery, if used. The A8436 is available in a very low profile (0.75 mm) - erminal 3 mm 3 mm MLP/TDFN package, making i ideal for space-consrained applicaions, as well as an MSOP. They are lead (Pb) free, wih 0% mae-in leadframe plaing. Typical Applicaions V BIAS 3.0 o 5.5 V Two Alkaline/NiMH/NiCAD or one Li+ baery or 1.5 o 5.5 V V D1 BATT T1 + One Li+ baery or 3.0 o 5.5 V V BATT T1 D1 R5 0 k 1.4 A 1. A (N.C.) 1.0 A R4 k VIN ILIM 0.1 μf SW FB 4.7 μf R1 R COUT R5 0 k 1.4 A 1. A (N.C.) 1.0 A R4 k VIN ILIM 0.1 μf 4.7 μf SW FB R1 R COUT R6 k R7 k DONE CHARGE A8436 TRIGGER IGBTDRV GND To IGBT Gae R3 R6 k R7 k A8436 DONE CHARGE TRIGGER IGBTDRV GND To IGBT Gae R3 Figure 1. Typical circui wih separae power supply o ransformer Figure. Typical circui wih single power supply A8436-DS, Rev. 4

2 Descripion (coninued) Applicaions include: Digial camera flash Film camera flash Cell phone flash Emergency srobe ligh Selecion Guide Par Number Package Packing* A8436EEJTR-T -pin TDFN/MLP 1500 pieces per 7-in. reel A8436ELZTR-T -pin MSOP 4000 pieces per 13-in. reel *Conac Allegro for addiional packing opions Absolue Maximum Raings Characerisic Symbol Noes Raing Unis SW pin V SW 0.3 o 40 V IGBTDRV pin V IGBTDRV 0.3 o V IN V FB pin V FB 0.3 o V IN V All oher pins V X 0.3 o 7 V Operaing Ambien Temperaure T A Range E 40 o 85 ºC Maximum Juncion Temperaure T J (max) 150 ºC Sorage Temperaure T sg 55 o 150 ºC Package Thermal Characerisics Characerisic Symbol Tes Condiions* Raing Unis Package EJ, 4 layer PCB, based on JEDEC sandard 45 ºC/W Package Thermal Resisance R θja Package LZ, 4 layer PCB, based on JEDEC sandard 3 ºC/W *Addiional informaion is available on he Allegro websie.

3 Funcional Block Diagram SW VIN DCM Comparaor CMP3 Conrol Logic 18 µs 1. V H L 40 V Triggered Timer DMOS Q S SET Q CMP R CLRQ I LIM Comparaor ILIM I LIM Decoder Adjusable Reference Enable Q SET S FB CHARGE Q CLR R CMP1 DONE 1. V V IN TRIGGER One-Sho Device Pin-ou Diagrams IGBTDRV NC IGBTDRV VIN GND CHARGE ILIM FB DONE TRIGGER SW Package EJ NC IGBTDRV VIN GND CHARGE ILIM FB DONE TRIGGER SW Package LZ GND Terminal Lis Table Number Name Funcion 1 NC No connecion IGBTDRV IGBT driver gae drive oupu 3 VIN Power supply inpu 4 GND Device ground 5 CHARGE Charging enable; se o low o power-off he A SW Swich, inernally conneced o he DMOS power FET drain 7 TRIGGER Srobe signal inpu 8 D Ō N Open drain, when pulled low by inernal MOSFET, indicaes ha Ē charging arge level has been reached 9 FB Oupu volage feedback ILIM Swich curren limi seing; ses hree discree levels (Top Views) 3

4 ELECTRICAL CHARACTERISTICS Typical values a T A = 5 C and V IN = 3.3 V (unless oherwise noed) Characerisics Symbol Tes Condiions Min. Typ. Max. Unis Supply Volage* V IN V Supply Curren I IN Charging done 1 μa Charging 1.3 ma Shudown (V CHARGE = 0 V, V TRIGGER = 0 V) μa Primary Side Curren Limi I SWLIM ILIM pin floaing A V ILIM < 1.0 V 1.0 A V ILIM > V IN 1.3 V 1.4 A SW On Resisance R DS(On)SW V IN = 3.3 V, I D = 800 ma, T A = 5 C 0.7 Ω SW Leakage Curren* I SWLKG V SW = 35 V 1 μa SW Maximum Off-Time OFF(Max) 18 μs SW Maximum On-Time ON(Max) 18 μs CHARGE Inpu Curren I CHARGE V CHARGE = V IN 1 μa CHARGE Inpu Volage* V CHARGE(H) V V CHARGE(L) 0.8 V D Ō N Ē Oupu Leakage Curren* I DONELKG 1 μa D Ō N Ē Oupu Low Volage* V DONE(L) 3 μa ino D Ō N Ē pin 0 mv FB Volage Threshold* V FB V FB Inpu Curren I FB V FB = 1.05 V 10 na UVLO Enable Threshold V UVLO V IN rising V UVLO Hyseresis V UVLOHYS 150 mv IGBT Driver IGBTDRV On Resisance o VIN R DS(On)I-V V IN = 3.3 V, V IGBTDRV = 1.5 V 5 Ω IGBTDRV On Resisance o GND R DS(On)I-G V IN = 3.3 V, V IGBTDRV = 1.5 V 6 Ω TRIGGER Inpu Curren I TRIGGER V TRIGGER = V IN 1 μa TRIGGER Inpu Volage* V TRIGGER(H) V V TRIGGER(L) 0.8 V Propagaion Delay, Rising Dr R gae =1 Ω, C LOAD = 6500 pf, V IN = 3.3 V 30 ns Propagaion Delay, Falling Df R gae =1 Ω, C LOAD = 6500 pf, V IN = 3.3 V 70 ns Oupu Rise Time r R gae =1 Ω, C LOAD = 6500 pf, V IN = 3.3 V 15 ns Oupu Fall Time f R gae =1 Ω, C LOAD = 6500 pf, V IN = 3.3 V 15 ns *Guaraneed by design and characerizaion over operaing emperaure range, 40 C o 85 C. 4

5 Operaion Timing Diagram CHARGE V UVLO VIN SW Targe DONE TRIGGER IGBTDRV A B C D E F Explanaion of Evens: A. Sar charging by pulling CHARGE o high, provided ha V IN is above he V UVLO level. B. Charging sops when reaches he arge volage. D Ō N Ē goes low, o signal he compleion of he charging process. C. Sar a new charging process wih a low-o-high ransiion a he CHARGE pin. D. Pull CHARGE o low, o pu he conroller in low-power sandby mode. E. Charging does no sar, because V IN is below V UVLO level when CHARGE goes high. F. Afer V IN goes above V UVLO, anoher low-o-high ransiion a he CHARGE pin is required o sar charging. 5

6 Performance Characerisics Tess performed using applicaion circui shown in figure 6 (unless oherwise noed) Charging Waveforms Symbol Parameer Unis/Division 50 V C4 I BATT(Avg) 00 ma ime 1 s Condiions Parameer Value V BATT.5 V V BIAS 3.3 V C OUT 0 μf C4 I BATT Symbol Parameer Unis/Division 50 V C4 I BATT(Avg) 00 ma ime 1 s Condiions Parameer Value V BATT 3.6 V V BIAS 3.3 V C OUT 0 μf C4 I BATT Symbol Parameer Unis/Division 50 V C4 I BATT(Avg) 00 ma ime 1 s Condiions Parameer Value V BATT 4. V V BIAS 3.3 V C OUT 0 μf C4 I BATT 6

7 Performance Characerisics, coninued Tess performed using applicaion circui shown in figure 6 (unless oherwise noed) Charge Time V BIAS = 3.3 V, C OUT = 0 μf Connec VBATT o a separae power supply Efficiency V BATT = V BIAS, T A = 5 C Charge Time (s) 7 7 Charge Time (s) V = 300 V OUT = 300 V V = 30 V OUT = 30 V Efficiency (%) V BATT = 5.0 V V BATT = 4. V V BATT = 3.0 V V BATT (V) (V) (V) Typical Swiching Waveform V BATT C3 Symbol Parameer Unis/Division 50 V V SW V C3 V BATT 5 V C4 I Primary 500 ma ime μs Condiions Parameer Value 300 V V BATT V IN C4 V SW I Primary IGBT Drive Timing Definiion TRIGGER 50% 50% Dr r Df f 90% 90% IGBTDRV % % 7

8 Performance Characerisics, coninued IGBT Drive waveforms are measured wih R-C load (1 Ω, 6800 pf) IGBT Drive Performance Rising Signal r V IGBTDRV Symbol Parameer Unis/Division V IGBTDRV 1 V C3 V TRIGGER 1 V ime 50 ns Condiions Parameer Value Dr.881 ns r ns C LOAD 6800 pf R gae 1 Ω C3 V TRIGGER Falling Signal f Symbol Parameer Unis/Division V IGBTDRV 1 V C3 V TRIGGER 1 V ime 50 ns Condiions Parameer Value Df 7.47 ns f ns C LOAD 6800 pf R gae 1 Ω V IGBTDRV C3 V TRIGGER 8

9 Funcional Descripion Overview The A8436 is a phooflash capacior charger conrol IC wih adjusable inpu curren limiing. I also inegraes an IGBT driver for srobe operaion of he flash ube, dramaically saving board space in comparison o discree soluions for srobe flash operaion. The conrol logic is shown in he funcional block diagram. The charging operaion of he A8436 is sared by a low-o-high signal on he CHARGE pin, provided ha V IN is above V UVLO level. If CHARGE is already high before V IN reaches V UVLO, anoher low-o-high ransiion on he CHARGE pin is required o sar he charging. When a charging cycle is iniiaed, he ransformer primary side curren, I Primary, ramps up linearly a a rae deermined by he combined effec of he baery volage, V BATT, and he primary side inducance, L Primary. When I Primary reaches he curren limi, I SWLIM, se by configuring he ILIM pin, he inernal MOSFET is urned off immediaely, allowing he energy o be pushed ino he phooflash capacior, C OUT, from he secondary winding. The secondary side curren drops linearly as C OUT charges. While he inernal MOSFET swich is urned off, he oupu volage,, is sensed by a resisor sring, R 1 hrough R 3, conneced beween he anode of he oupu diode, D1, and ground. This resisor sring forms a volage divider ha feeds back o he FB pin. The resisors mus be sized o achieve a desired oupu volage level based on a ypical value of 1.05 V a he FB pin. As soon as reaches he desired value, he charging process is erminaed. The user may oggle he CHARGE pin o refresh he phooflash capacior. Fas Charging and Timer Modes The IC operaes in he Fas Charging mode when he phooflash capacior, C OUT, is only parially discharged. In Fas Charging mode, he converer operaes near he disconinuous boundary, and a sensing circui racks he fly-back volage a he SW node. As soon as his volage swings below 1. V, he inernal MOS- FET swich is urned on again, saring he nex charging cycle. The IC operaes in he Timer mode when beginning o charge a compleely discharged phooflash capacior, usually when he oupu volage,, is less han approximaely o 0 V. Timer mode is a fixed 18 μs off-ime conrol. One advanage of he A8436 wachdog imer conrol scheme is ha i limis he iniial curren surge and hus acs as a sof-sar. As shown in figure 3, he imer mode only lass a small fracion of a second (usually < 0 ms). I can be recognized by is lower iniial inpu charging curren as a resul of a lower duy cycle. As oupu volage rises o more han o 0 V, he adapive Fas Charging mode akes over he conrol, raising he average inpu curren level. Timer Mode Fas Charging Mode Swich On-Time and Off-Time Conrol The A8436 implemens an adapive on-ime/off-ime conrol. (For circui deails, please refer o he he Conrol Logic block in he simplified Funcional Block Diagram on page.) On-ime duraion, ON, is deermined by inpu volage, V IN, ransformer primary inducance, L Primary, and he se curren limi, I SWLIM. Off-ime duraion, OFF, depends on he operaing condiions during swich off-ime. The A8436 applies is wo charging modes, Fas Charging mode and Timer mode, according o hose condiions. I BATT(Avg) Figure 3. Sequencing of Timer mode and Fas Charging mode (ime axis scale is 1 s per division) 9

10 Charging Cycles for a Compleely Discharged Phooflash Capacior V BATT C3 Figure 4A. Iniial wo cyles of charging a compleely discharged phooflash capacior. In hese wo cycles, off-ime (V SW low) is conrolled by he inernal 18 μs imer (Timer mode). Noe ha, in he firs cycle, I Primary sars near 0 A, bu in he second cycle, i sars a a higher level. This indicaes ha he ransformer core did no rese during he firs cycle. C4 V SW I Primary V BATT C3 Figure 4B. During he inermediae cycles, he oupu volage,, has increased. I Secondary goes disconinuous, leading o he ringing of V SW. The ampliude of he ringing is no grea enough, however, o pull V SW below 1. V, so he A8436 remains in Timer mode. C4 V SW I Primary V BATT C3 Figure 4C. The final cycle of Timer mode is shown, followed by a series of cycles in Fas Charging mode. V SW is able o ring down below 1. V in every cycle as a resul of increased, riggering he urn-on of he main MOSFET swich. Symbol Parameer Unis/Division 50 V V SW V C3 V BATT 5 V C4 I Primary 500 ma ime 5 μs Condiions Parameer Value V BATT V IN C4 V SW I Primary

11 To undersand he Timer mode, i is noed ha he secondary winding charge curren, I Secondary, decreases linearly a a rae of: where: di Secondary d = (1) L N Primary I Secondary is he secondary side curren, L Primary is he primary side inducance, and N is he ransformer urns raio (N Secondary / N Primary ). As shown in he hree panels of figure 4, when he A8436 charges a fully-discharged phooflash capacior, I Secondary decreases very slowly due o he low iniial. The A8436 inernal imer (Timer mode) ses a maximum imeframe of 18 μs for he offime as long as he SW node volage is greaer han 1. V. When he off-ime passes 18 μs, he inernal MOSFET swich is urned on, iniiaing he nex charging cycle. Inpu Curren Limiing The peak inpu curren, I SWLIM, can be se o hree levels by configuring he ILIM pin: I SWLIM Seing (A) ILIM Pin Connecion 1.0 Exernal ground 1. Floa 1.4 Pull up o IC supply volage wih a 1 o kω resisor Lower inpu curren offers he advanage of a longer baery lifeime. For faser charging ime, however, use he highes curren limi. I SWLIM may be adjused during charging. Figure 5 shows a waveform of I SWLIM being adjused during charging. I SWLIM is lowered from 1.4 o 1. A, and charging slows slighly a he lower curren level. I IN(Avg) I SWLIM =1.4A Figure 5. Reducing I SWLIM during charging I SWLIM =1.A 11

12 Applicaions Informaion Transformer Design Turns Raio. The minimum ransformer urns raio, N, (Secondary:Primary) should be chosen based on he following formula: + V D _Drop N () 40 V BATT where: (V) is he required oupu volage level, V D_Drop (V) is he forward volage drop of he oupu diode(s), V BATT (V) is he ransformer baery supply, and 40 (V) is he raed volage for he inernal MOSFET swich, represening he maximum allowable refleced volage from he oupu o he SW pin. For example, if V BATT is 3.5 V and V D_Drop is 1.7 V (which could be he case when wo high volage diodes were in series), and he desired is 30 V, hen he urns raio should be a leas 8.9. In a wors case, when V BATT is highes and V D_Drop and are a heir maximum olerance limi, N will be higher. Taking V BATT = 5.5 V, V D_Drop = V, and = 30 V % = 36.4 V as he wors case condiion, N can be deermined o be 9.5. In pracice, always choose a urns raio ha is higher han he calculaed value o give some safey margin. In he wors case example, a minimum urns raio of N = is recommended. Primary Inducance. The A8436 has a minimum swich off-ime, OFF(min), of 300 ns, o ensure correc SW node volage sensing. As a loose guideline when choosing he primary inducance, L Primary (μh), use he following formula: L Primary 300 N 9 I SWLIM. (3) Ideally, he charging ime is no affeced by ransformer primary inducance. In pracice, however, i is recommended ha a primary inducance be chosen beween μh and 0 μh. When L Primary is much lower han μh, he converer operaes a higher frequency, which increases swiching loss proporionally. This leads o lower efficiency and longer charging ime. When L Primary is greaer han 0 μh, he raing of he ransformer mus be dramaically increased o handle he required power densiy, and he series resisances are usually higher. A design ha is opimized o achieve a small fooprin soluion would have an L Primary of 1 o 14 μh, wih minimized leakage inducance and secondary capaciance, and minimized primary and secondary series resisance. Please refer o he able Recommended Componens for more informaion. Leakage Inducance and Secondary Capaciance. The ransformer design should minimize he leakage inducance o ensure he urn-off volage spike a he SW node does no exceed he 40 V limi. An achievable minimum leakage inducance for his applicaion, however, is usually compromised by an increase in parasiic capaciance. Furhermore, he ransformer secondary capaciance should be minimized. Any secondary capaciance is muliplied by N when refleced o he primary, leading o high iniial curren swings when he swich urns on, and o reduced efficiency. V BIAS 3.0 o 5.5 V R5 0 k R6 k R4 k R7 k VIN ILIM DONE CHARGE 0.1 μf Two Alkaline/NiMH/NiCAD or one Li + V BATT 1.5 o 5.5 V D1 T1 + A8436 TRIGGER IGBTDRV GND 4.7 μf To IGBT Gae R1 150 k R 150 k R3 1. k COUT 0 μf 330 V Figure 6. Typical circui for phooflash applicaion. Configured for I SWLIM of 1.4 A. SW FB Symbol D1 Raing 0.1 μf, X5R or X7R, V 4.7 μf, X5R or X7R, V Fairchild Semiconducor BAV3S (dual diode conneced in series) T1 Tokyo Coil Engineering T-16-04A, L Primary = 1 μh, N =. R1, R 106 resisors, 1 % R resisor, 1 % R4, R5 Pull-up resisors R6, R7 Pull-down resisors 1

13 Adjusing Oupu Volage The A8436 senses oupu volage during swich off-ime. This allows he volage divider nework, R1 hrough R3 (see figure 6), o be conneced a he anode of he high volage oupu diode, D1, eliminaing power loss due o he feedback nework when charging is complee. The oupu volage can be adjused by selecing proper values of he volage divider resisors. Use he following equaion o calculae values for Rx (Ω): R1 + R R 3 = V FB 1. (4) R1 and R ogeher need o have a breakdown volage of a leas 300 V. A ypical 106 surface moun resisor has a 150 V breakdown volage raing. I is recommended ha R1 and R have similar values o ensure an even volage sress beween hem. Recommended values are: R1 = R = 150 kω (106) R3 = 1. kω (0603) which ogeher yield a sop volage of 303 V. Using higher resisance values for R1, R, and R3 does no offer significan efficiency improvemen, because he power loss of he feedback nework occurs mainly during swich off-ime, and because he off-ime is only a small fracion of each charging cycle. Oupu Diode Selecion Choose he recifying diode(s), D1, o have small parasiic capaciance (shor reverse recovery ime) while saisfying he reverse volage and forward curren requiremens. The peak reverse volage of he diode, V D_Peak, occurs when he inernal MOSFET swich is closed, and he primary-side curren sars o ramp-up. I can be calculaed as: V = + N V. (5) BATT D_Peak The peak curren of he recifying diode, ID_Peak, is calculaed as : I D_Peak = I Primary_Peak / N. (6) Inpu Capacior Selecion Ceramic capaciors wih X5R or X7R dielecrics are recommended for he inpu capacior,. I should be raed a leas 4.7 μf / 6.3 V o decouple he baery inpu, V BATT, a he primary of he ransformer. When using a separae bias, V BIAS, for he A8436 VIN supply, connec a leas a 0.1 μf / 6.3 V bypass capacior o he VIN pin. Layou Guidelines Key o a good layou for he phooflash capacior charger circui is o keep he parasiics minimized on he power swich loop (ransformer primary side) and he recifier loop (secondary side). Use shor, hick races for connecions o he ransformer primary and SW pin. Oupu volage sensing circui elemens mus be kep away from swiching nodes such as SW pin. Make sure ha here is no GND plane underneah R1 and R, because parasiic capaciance o ground will affec sensing accuracy. I is imporan ha he D Ō N Ē signal race be roued away from he ransformer and oher swiching races, in order o minimize noise pickup. In addiion, high volage isolaion rules mus be followed carefully o avoid breakdown failure of he circui board. Recommended Componens Table Componen Raing Par Number Source Inpu Capacior 0.1 μf, ± %, 16 V X7R ceramic capacior (0603) GRM188R74KA01D Muraa Inpu Capacior 4.7 μf, ± %, V, X5R ceramic capacior (0805) LMK1BJ475KG Taiyo Yuden COUT Phooflash Capacior 330 V, 0 μf (or 19 o 180 μf) EPH-331ELL1B131S Chemi-Con Philips Semiconducor, x 50 V, 5 ma, 5 pf BAV3S D1 Oupu Diode Fairchild Semiconducor x 300 V, 5 ma, 5 pf GSD004S Vishay R1 and R FB Resisors 150 kω, 1 / 4 W ± 1% (106) 9063A1503FKHFT Yageo R3 FB Resisors 1.0 kω 1 / W ± 1% (0603) 9T06031A101FBHFT Yageo 1:., L Primary = 14.5 μh LDT565630T-00 TDK T1 Transformer 1:., L Primary = 1 μh T-16-04A Tokyo Coil Engineering 1:, L Primary =.8 μh ST-53517A Asaech 1:., L Primary = 9.8 μh SBL Kijima-Musen 13

14 Package EJ, -Conac TDFN/MLP A C PCB Layou Reference View B 1.65 A All dimensions nominal, no for ooling use (reference JEDEC MO-9WEED) Dimensions in millimeers Exac case and lead configuraion a supplier discreion wihin limis shown Terminal #1 mark area B Exposed hermal pad (reference only, erminal #1 idenifier appearance a supplier discreion).38 C Reference land paern layou (reference IPC7351 SON50P300X300X80-11WEED3M); All pads a minimum of 0.0 mm from all adjacen pads; adjus as necessary o mee applicaion process requiremens and PCB layou olerances; when mouning on a mulilayer PCB, hermal vias a he exposed hermal pad land can improve hermal dissipaion (reference EIA/JEDEC Sandard JESD51-5) 14

15 Package LZ, -Conac MSOP º A Seaing Plane Gauge Plane 1 B PCB Layou Reference View SEATING PLANE MAX All dimensions nominal, no for ooling use (reference JEDEC MO-187 BA, excep leads) Dimensions in millimeers Dimensions exclusive of mold flash, gae burrs, and dambar prorusions Exac case and lead configuraion a supplier discreion wihin limis shown A Terminal #1 mark area B Reference land paern layou (reference IPC7351 TSSOP50P490X1-M); All pads a minimum of 0.0 mm from all adjacen pads; adjus as necessary o mee applicaion process requiremens and PCB layou olerances Copyrigh 005, 007, The producs described here are manufacured under one or more U.S. paens or U.S. paens pending. reserves he righ o make, from ime o ime, such de par ures from he deail spec i fi ca ions as may be required o permi improvemens in he per for mance, reliabiliy, or manufacurabiliy of is producs. Before placing an order, he user is cauioned o verify ha he informaion being relied upon is curren. Allegro s producs are no o be used in life suppor devices or sysems, if a failure of an Allegro produc can reasonably be expeced o cause he failure of ha life suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. The in for ma ion in clud ed herein is believed o be ac cu rae and reliable. How ev er, assumes no responsibiliy for is use; nor for any in fringe men of paens or oher righs of hird paries which may resul from is use. For he laes version of his documen, visi our websie: 15

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