Preliminary Data Sheet
|
|
- Scot Nash
- 5 years ago
- Views:
Transcription
1 Ultra Low-Noise, High Speed, Wideband, Dual Operational Amplifier e n = 4.5 nv/ Hz, SR = 7 V/μs, GBW = 15 MHz, V IO = ±.3 mv Description Preliminary Data Sheet The μpc457mf-daa is an ultra low-noise, wideband high slew-rate, dual operational amplifier. Input equivalent noise is three times better than the conventional μpc4558 type op-amps. The gain bandwidth products and the slew-rate are seven times better than μpc4558. In spite of fast AC performance, the μpc457mf-daa is extremely stable under voltage-follower circuit conditions. Supply current is also improved compared with conventional wideband op-amps. The μpc457mf-daa is an excellent choice for pre-amplifiers and active filters in audio, instrumentation, and communication circuits. Features Ultra low-noise (f = 1 khz): 4.5 nv/ Hz (TYP.) Total harmonic distortion (f = Hz to khz):.% (TYP.) High slew rate : 7 V/μs (TYP.) High gain bandwidth product (f = 1 khz) : 15 MHz (TYP.) Input offset voltage : ±.3 mv (TYP.) Operating ambient temperature : 4 to 85 C Internal frequency compensation Ordering Information Part Number Package Package Code (Previous Package Code) μpc457mf-daa-e1-at *1 8-pin plastic SOP ( ) PRSP8DM-A ( ) Package Abbreviation Note: 1. Pb-free (This product does not contain Pb in the external electrode and other parts.) MF R3DS58EJ1 Rev.1. Supplying Form 1 mm wide embossed taping Pin 1 on draw-out side 5 p/reel Caution Do not use the products in applications such as the transportation equipment (a car, a train, a ship, etc.) where Special quality grade is required, because the products are placed in a quality grade standard to be required at general devices. R3DS58EJ1 Rev.1. Page 1 of 9
2 Pin Configuration (Top View) OUT1 1 8 V II1 1 7 OUT IN1 3 6 II V 4 5 IN Equivalent Circuit (for Each Circuit) V R1 Q7 Q5 Q14 II Q1 Q Q8 Q9 Q13 Q11 R7 Q16 IN R5 C R6 R8 R9 Q1 Q15 V Q3 R C1 Q4 R3 Q6 R4 Q1 R1 D OUT Absolute Maximum Ratings (T A = 5 C) Parameter Symbol Ratings Unit Voltage between V and V *1 V V.3 to 36 V Differential Input Voltage V ID ±3 V Input Voltage * V I V.3 to V.3 V Output Applied Voltage *3 V O V.3 to V.3 V Total Power Dissipation *4 P T 44 mw Output Short Circuit Duration (vs. GND) *5 t S 1 s Operating Ambient Temperature T A 4 to 85 C Storage Temperature T stg 55 to 15 C Notes: *1. Note that reverse connections of the power supply may damage ICs. *. The input voltage is allowed to input without damage or destruction independent of the magnitude of V. Either input signal is not allowed to go negative by more than.3 V. In addition, the input voltage that operates normally as an operational amplifier is within the Common Mode Input Voltage range of an electrical characteristic. *3. A range where input voltage can be applied to an output pin externally with no deterioration or damage to the feature (characteristic). The input voltage can be applied regardless of the electric supply voltage. This specification which includes the transition state such as electric power ON/OFF must be kept. *4. This is the value in T A 56 C of when the glass epoxy substrate (size: 1 mm x 1 mm, thickness: 1 mm, 15% of the substrate area where only one side is copper foiled is filling wired) is mounted. Derate at 6.4 mw/ C when T A > 56 C. In the condition same as the above, Junction ambient thermal resistance R th(j-a) =156 C/W. *5. Only as for V 15 V and any 1 channel. Please use the product within the derating condition or Total Power Dissipation, which are showed in Note 4. R3DS58EJ1 Rev.1. Page of 9
3 Recommended Operating Conditions Parameter Symbol MIN. TYP. MAX. Unit Power Supply Voltage (Split) V ± ±4 ±16 V Output Current I O ±1 ma Source Resistance R S 5 kω Capacitive Load (A V = 1) C L 1 pf Electrical Characteristics (T A = 5 C, V ± = ±15 V) Parameter Symbol MIN. TYP. MAX. Unit Conditions Input Offset Voltage V IO ±.3 ±5 mv R S 5 Ω Input Offset Current I IO ±1 ±1 na Input Bias Current *1 I B 1 4 na Large Signal Voltage Gain A V 3 3 R L kω, V O = ±1 V Supply Current * I CC 5 8 ma I O = A Common Mode Rejection Ratio CMR 8 1 db Supply Voltage Rejection Ratio SVR 8 1 db Output Voltage Swing V om ±1 ±13.4 V R L 1 kω ±1 ±1.8 V R L kω Common Model Input Voltage V ICM ±1 ±14 V Range Slew Rate SR 5 7 V/μs A V = 1, R L kω Gain Bandwidth Product GBW 1 15 MHz f O = 1 khz Unity Gain Frequency f unity 7 MHz open loop Phase Margin φ unity 5 degree open loop Total Harmonic Distortion THD. % V O = 3 V r.m.s., f = Hz to khz (Figure1) Input Equivalent Noise Voltage V n.9 μv r.m.s. RIAA (Figure) μv r.m.s. FLATJIS A, R S = 1 Ω (Figure3) Input Equivalent Noise Voltage e n 5.5 nv/ Hz f O = 1 Hz, R S = 1 Ω Dencity 4.5 nv/ Hz f O = 1 khz, R S = 1 Ω Input Equivalent Noise Current i n.7 pa/ Hz f O = 1 khz Density Channel Separation 1 db f = Hz to khz Notes: *1. Input bias currents flow out from IC. Because each current is base current of PNP-transistor on input stage. *. This is a current that flows in the internal circuit. This current flows irrespective of the existence of use. R3DS58EJ1 Rev.1. Page 3 of 9
4 MEASUREMENT CIRCUIT Figure1 Total Harmonic Distortion Measurement Circuit kω VO = 3 Vr.m.s. Figure Noise Measurement Circuit (RIAA) 4 pf 8 pf 61 Ω 47 μf. kω 33 μf 56 kω 3 kω 33 kω 1.5 μf 1 kω 4 db Amp. LPF (fo = 3 khz) VO = (36.5 db4 db) Vn Vn = VO 76.5 db Figure3 Noise Measurement Circuit (FLATJIS A) 1 kω 1 Ω RS = 1 Ω JIS A VO = 4 db Vn Vn = VO 4 db R3DS58EJ1 Rev.1. Page 4 of 9
5 Typical Characteristics (T A = 5 C, TYP.) PT - Total Power Dissipation - mw PT vs. TA When the glass epoxy substrate (size: 1 mm x 1 mm, thickness: 1 mm) is mounted. (For the details, see Absolute Maximum Ratings Note * 4.) TA - Operating Ambient Temperature - C Av - Open Loop Voltage Gain - db OPEN LOOP FREQUENCY RESPONSE 1 V _ = _ 15 V k 1 k 1 k 1 M 1 M f- Frequency - Hz VIO - Input Offset Voltage -mv INPUT OFFSET VOLTAGE 3 V ± =.5 15 V each 5 samples data TA - Operating Ambient Temperature - C IB - Input Bias Current -na INPUT BIAS CURRENT 14 V ± = ±15 V TA - Operating Ambient Temperature - C Vom - Output Voltage Swing - Vp-p 3 1 LARGE SIGNAL FREQUENCY RESPONSE V ± 1 1 k 1 k 1 k 1 M f - Frequency - Hz = ±15 V RL = 1 kω 1 M _ VO - Output Voltage - V ±15 ±1 ±5 OUTPUT CURRENT LIMIT VO VO IO SOURCE IO SINK ± V = ±15 V IO - Output Current - ma R3DS58EJ1 Rev.1. Page 5 of 9
6 ICC - Supply Current - ma SUPPLY CURRENT vs. TEMPERATURE 8 V ± = ±15 V 6 4 ICC - Supply Current - ma SUPPLY CURRENT vs. SUPPLY VOLTAGE _1 _ TA - Operating Ambient Temperature - C V ± - Supply Voltage - V VICM - Common Mode Input Voltage Range - V COMMON MODE INPUT VOLTAGE RANGE 1 1 VO - Output Voltage - V 1 5 VOLTAGE FOLLOWER PULSE RESPONSE 5 V _ = _ 15 V AV = 1 RL = kω _1 _ _ V - Supply Voltage - V t - Time - μs Vn -Input Equivalent Noise Voltage - μvr.m.s. INPUT EQUIVALENT NOISE VOLTAGE (FLATJIS A) _ V = _ 15 V en -Input Equivalent Noise Voltage Density - nv/ Hz INPUT EQUIVALENT NOISE VOLTAGE DENSITY 8 V _ = _ 15 V RS = 1 Ω k 1 k 1 k k 1 k 1 k RS - Source Resistance - Ω f - Frequency - Hz R3DS58EJ1 Rev.1. Page 6 of 9
7 THD - Total Harmonic Distortion - % TOTAL HARMONIC DISTORTION 1 1 k V _ = _ 15 V VO = 3 Vr.m.s. AV = 1 RL = kω f - Frequency - Hz 1 k 1 k R3DS58EJ1 Rev.1. Page 7 of 9
8 PRECAUTIONS FOR USE The process of unused circuits If there is an unused circuit, the following connection is recommended. Process example of unused circuits V V R R V To potentials within the range of common-mode input voltage (VICM) V Remark A midpoint potential of V and V is applied to this example. Power supply used (Split/Single) The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. Ratings of input/output pin voltage When the voltage of input/output pin exceeds the absolute maximum rating, it may cause degradation of characteristics or damages, by a conduction of a parasitic diode within an IC. In addition, when the input pin may be lower than V, or the output pin may exceed the power supply voltage, it is recommended to make a clump circuit by a diode whose forward voltage is low (e.g.: Schottky diode) for protection. Range of common-mode input voltage When the supply voltage does not meet the condition of electrical characteristics, the range of common-mode input voltage is as follows. V ICM (TYP.): V 1 (V) to V 1 (V) (T A = 5 C) During designing, temperature characteristics for use with allowance. The maximum output voltage The range of the TYP. value of the maximum output voltage when the supply voltage does not meet the condition of electrical characteristics is as follows: V om (TYP.): V 1.6 (V) (T A = 5 C), V om (TYP.): V 1.6 (V) (T A = 5 C) During designing, consider variations in characteristics and temperature characteristics for use with allowance. In addition, also note that the output voltage range (V om V om ) becomes narrow when an output current increases. Handling of ICs When stress is added to ICs due to warpage or bending of a board, the characteristic fluctuates due to piezoelectric effect. Therefore, pay attention to warpage or bending of a board. R3DS58EJ1 Rev.1. Page 8 of 9
9 Package Drawings 8-pin Plastic SOP ( ) R3DS58EJ1 Rev.1. Page 9 of 9
10 Revision History μpc457mf-daa Data Sheet Description Rev. Date Page Summary 1. First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C - 1
11 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information.. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 1. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 1. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note ) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES Refer to " for the latest and detailed information. Renesas Electronics America Inc. 88 Scott Boulevard Santa Clara, CA , U.S.A. Tel: , Fax: Renesas Electronics Canada Limited 111 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: , Fax: Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: , Fax: Renesas Electronics Europe GmbH Arcadiastrasse 1, 447 Düsseldorf, Germany Tel: , Fax: Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.7 ZhiChunLu Haidian District, Beijing 183, P.R.China Tel: , Fax: Renesas Electronics (Shanghai) Co., Ltd. Unit 4, 5, AZIA Center, No.133 Lujiazui Ring Rd., Pudong District, Shanghai 1, China Tel: , Fax: / Renesas Electronics Hong Kong Limited Unit , 16/F., Tower, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: , Fax: /944 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: , Fax: Renesas Electronics Singapore Pte. Ltd. 1 harbourfront Avenue, #6-1, keppel Bay Tower, Singapore 9863 Tel: , Fax: Renesas Electronics Malaysia Sdn.Bhd. Unit 96, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 465 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: , Fax: Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 7- Yeoksam-Dong, Kangnam-Ku, Seoul 135-8, Korea Tel: , Fax: Renesas Electronics Corporation. All rights reserved. Colophon.
Low-Voltage CMOS Logic HD74LV_A/RD74LVC_B Series
COMMON INFORMATION Low-Voltage CMOS Logic HD74LV_A/RD74LVC_B Series R04ZZ0001EJ0200 (Previous: REJ27D0015-0100) Rev.0 1. HD74LV244A Supply Current I CC (ma) Supply Current vs. Operating Frequency 100 8bit
More informationWashing machine, electric fan, air cleaner, other general purpose control applications
800V - 1A - Triac Low Power Use Features I T (RMS) : 1 A V DRM : 800 V (Tj = 125 C) I FGTI, I RGTI, I RGTIII : 15 ma Tj: 125 C Planar Passivation Type Preliminary Datasheet R07DS0967EJ0001 Rev.0.01 Outline
More information2SC2618. Preliminary Datasheet. Silicon NPN Epitaxial. Application. Outline. Absolute Maximum Ratings. R07DS0273EJ0400 Rev.4.00.
SC618 Silicon NPN Epitaxial Datasheet R7DS73EJ4 Rev.4. pplication Low frequency amplifier Complementary pair with S111 Outline RENESS Package code: PLSP3ZB- (Package name: MPK) 3 1. Emitter. Base 3. Collector
More informationRJP4301APP-M0. Preliminary Datasheet. Nch IGBT for Strobe Flash. Features. Outline. Applications. Maximum Ratings. R07DS0749EJ0100 Rev.1.
Nch IGBT for Strobe Flash Datasheet R07DS0749EJ0100 Rev.1.00 Features V CES : 430 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1 1 : Gate
More informationCR12LM-12B. Preliminary Datasheet. Thyristor. Medium Power Use. Features. Outline. Applications. Maximum Ratings. R07DS0213EJ0100 Rev.1.
Thyristor Medium Power Use Datasheet R7DS213EJ1 Rev.1. Features I T (AV) : 12 A V DRM : 6 V I GT : 3 ma Viso : 1 V The product guaranteed maximum junction temperature of 15 C Insulated Type Planar Passivation
More informationAbsolute Maximum Ratings (Tc = 25 C)
Datasheet RJP3HDPD Silicon N Channel IGBT High speed power switching R7DS465EJ2 Rev.2. Jun 5, 2 Features Trench gate and thin wafer technology (G6H-II series) High speed switching: t r = 8 ns typ., t f
More informationAbsolute Maximum Ratings (Ta = 25 C)
RJP63K2DPP-M Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS468EJ2 Rev.2. Jun 5, 2 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage:
More informationRJK03M5DNS. Preliminary Datasheet. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
RJK3M5DNS Silicon N Channel Power MOS FET Power Switching Datasheet R7DS769EJ11 Rev.1.1 May 29, Features High speed switching Capable of.5 V gate drive Low drive current High density mounting Low on-resistance
More informationCR6PM-12A. Preliminary Datasheet. Thyristor. Medium Power Use. Features. Outline. Applications. Maximum Ratings
CR6PM-1A Thyristor Medium Power Use Datasheet RDS114EJ (Previous: REJG-1) Rev.. Sep 1, 1 Features I T (AV) : 6 A V DRM : 6 V I GT : 1 ma Viso : V Insulated Type Planar Passivation Type UL Recognized :
More informationNPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold Jun 29, 2011
PreliminaryData Sheet R09DS0022EJ00 NPN Silicon RF Transistor Rev.2.00 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The is a low supply
More information2SK975. Preliminary Datasheet. Silicon N Channel MOS FET. Application. Features. Outline. Absolute Maximum Ratings
Silicon N Channel MOS FET Datasheet R7DS44EJ (Previous: REJG9-) Rev.. Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can
More informationRJH1CF7RDPQ-80. Preliminary Datasheet. Silicon N Channel IGBT High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJHCF7RDPQ-8 Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS357EJ Rev.. May 2, 2 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency
More informationItem Symbol Ratings Unit Collector to emitter voltage V CES 600 V Gate to emitter voltage V GES ±30 V Collector current. Note1.
2 3 RJP6FDPM 6 V - 25 A - IGBT High Speed Power Switching Datasheet R7DS585EJ Rev.. Features Low collector to emitter saturation voltage V CE(sat) =.4 V typ. (at I C = 25 A, V GE = 5 V, ) Trench gate and
More informationBCR2PM-14LE. Preliminary Datasheet. Triac Low Power Use. Features. Outline. Applications. Precautions on Usage. Maximum Ratings
Triac Low Power Use Datasheet RDSEJ1 Rev.1. Features I T (RMS) : A V DRM : 8 V (Tj = 1 C) I FGT I, I RGT I, I RGT III : 1 ma Planar Passivation Type The product guaranteed maximum junction temperature
More information1 2 3 E. Item Symbol Ratings Unit Collector to emitter voltage V CES 600 V Gate to emitter voltage V GES 30 V Collector current. Note1.
RJH6T4DPQ-A Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS46EJ1 Rev.1. Jun 15, 211 Features Low collector to emitter saturation voltage V CE(sat) = 1.7 V typ. (at I C = 3 A, V GE = 15
More information2SB1691. Preliminary Datasheet. Silicon PNP Epitaxial Planer Low Frequency Power Amplifier. Features. Outline. Absolute Maximum Ratings
Silicon PNP Epitaxial Planer Low Frequency Power mplifier Datasheet R07DS0272EJ0400 Rev.4.00 Features Small size package: MPK (SC 59) Large Maximum current: I C = 1 Low collector to emitter saturation
More informationRJK1054DPB. Preliminary Datasheet. 100V, 20A, 22m max. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
V, A, 22m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Low drive current Low on-resistance R DS(on) = 7 m typ. (at V GS = V) Pb-free Halogen-free High density mounting
More information1 1. Gate 2. Source 3. Drain 4. Source. This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
RQA4PXDQS Silicon N-Channel MOS FET Datasheet R7DS418EJ Rev.. May 9, 212 Features High Output Power, High Efficiency = +29.7 dbm, = 68% (f = 2 MHz) Compact package capable of surface mounting Outline RENESAS
More informationμ PC451GR-9LG, μ PC324GR-9LG
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC45GR-9LG, μ PC4GR-9LG SINGLE POWER SUPPLY QUAD OPERATIONAL AMPLIFIERS DESCRIPTION The μ PC45GR-9LG, μ PC4GR-9LG are quad operational amplifiers which
More informationRJK6024DPD. Preliminary Datasheet. 600V - 0.4A - MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
Datasheet RJK624DPD 6V -.4A - MOS FET High Speed Power Switching R7DS688EJ2 (Previous: REJ3G936-) Rev.2. Features Low on-resistance R DS(on) = 28 typ. (at I D =.2 A, V GS = V, Ta = 25 C) Low drive current
More informationCR08AS-12A. Preliminary Datasheet. 600V - 0.8A - Thyristor Low Power Use. Features. Outline. Applications. Maximum Ratings. R07DS0489EJ0300 Rev.3.
CR8AS-12A 6V -.8A - Thyristor Low Power Use Datasheet R7DS489EJ3 Rev.3. May 22, 213 Features I T (AV) :.8 A V DRM : 6 V I GT : 1 μa Non-Insulated Type Planar Type Surface Mounted type Outline RENESAS Package
More informationCR8PM-12B Features Outline Applications Maximum Ratings Voltage class Parameter Symbol Unit
Thyristor Medium Power Use Datasheet R7DS117EJ1 Rev.1. Sep 3, 1 Features I T (AV) : 8 A V DRM : 6 V I GT : 15 ma Viso : V Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E22394 Outline
More informationRJK0653DPB. Preliminary Datasheet. 60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching. Features. Outline.
RJK653DPB 6V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Datasheet Low on-resistance
More informationItem Symbol Value Unit Drain to source voltage V DSS 500 V Gate to source voltage V GSS 30 V Drain current I D 3 A Drain peak current. Note1.
RJK5DPD Silicon N Channel MOS FET High Speed Power Switching Datasheet R7DS7EJ Rev.. Features Low on-state resistance R DS(on) =. typ. (at I D =.5 A, V GS = V, Ta = 5 C) High speed switching Outline RENESAS
More informationBIPOLAR ANALOG INTEGRATED CIRCUIT μ PC1251GR-9LG, μ PC1251MP-KAA, μ PC358GR-9LG
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT SINGLE POWER SUPPLY DUAL OPERATIONAL AMPLIFIERS DESCRIPTION The are dual operational amplifiers which are designed to operate for a single power supply.
More informationThe NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Part No. Lead Plating Packing Package
Preliminary Data Sheet NP2NYDF MOS FIELD EFFECT TRANSISTOR R7DS75EJ Rev.. Apr 7, 22 Description The NP2NYDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
More informationNV4V31SF. Preliminary Data Sheet DESCRIPTION FEATURES APPLICATIONS. R08DS0070EJ0100 Rev.1.00
Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source Preliminary Data Sheet R08DS0070EJ0100 Rev.1.00 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly
More information1 2 3 E. Item Symbol Ratings Unit Collector to emitter voltage V CES 600 V Gate to emitter voltage V GES ±30 V Collector current Tc = 25 C I C 85 A
6V - 45A - IGBT High Speed Power Switching Datasheet R7DS632EJ Rev.. Features Low collector to emitter saturation voltage V CE(sat) =.35 V typ. (at I C = 45 A, V GE = 5 V, ) Built in fast recovery diode
More informationItem Symbol Value Unit Drain to source voltage V DSS 600 V Gate to source voltage V GSS 30 V Drain current. Note4. Note1. Note1. Note3.
RJK66DPP-E 6V - 5A - MOS FET High Speed Power Switching Datasheet R7DS6EJ Rev.. Mar 6, Features Low on-state resistance R DS(on) =. typ. (at I D =.5 A, V GS = V, Ta = 5 C) High speed switching Outline
More informationBCR16CM-12LC. Preliminary Datasheet. 600V - 16A - Triac. Medium Power Use. Features. Outline. Applications. Maximum Ratings
BCR16CM-1LC 6V - 16A - Triac Medium Power Use Features I T (RMS) : 16 A V DRM : 6 V I FGT I, I RGT I, I RGT III : ma Non-Insulated Type Planar Passivation Type Datasheet RDS11EJ (Previous: REJG184-1) Rev..
More informationPart Number Lead Plating Packing Package UPA603CT-T1-A/AT -A : Sn-Bi, -AT : Pure Sn 3000p/Reel SC-74 (6pMM)
µpa63ct P-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R7DS1283EJ2 Rev.2. Jul 1, 215 Description The UPA63CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which
More informationWashing machine, inversion operation of capacitor motor, and other general controlling devices.
7V - 12A - Triac Medium Power Use Datasheet R7DS99EJ1 Rev.1. Nov 14, 212 Features I T (RMS) : 12 A V DRM : 8 V (Tj = 125 C) Tj: 15 C I FGTI, I RGTI, I RGT III :3 ma Viso: 18 V Insulated Type Planar Passivation
More informationItem Symbol Ratings Unit Collector to emitter voltage V CES 600 V Gate to emitter voltage V GES ±30 V Collector current. Note2
RJP6DDPE Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS172EJ1 Rev.1. Nov 15, 21 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V CE(sat)
More informationPart Number Lead Plating Packing Package 2SK1581C-T1B-A/AT -A:Sn-Bi, -AT:Pure Sn 3000p/Reel SC-59 (3pMM)
N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R7DS1287EJ2 Rev.2. Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly
More informationSwitching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Data Sheet mpd166036gr INTELLIGENT POWER DEVICE R07DS1118EJ0200 Rev.2.00 Description The mpd166036 is an N-channel high side driver with built-in charge pump and embedded protection function. It is also
More information2SJ181(L), 2SJ181(S) Preliminary Datasheet. Silicon P Channel MOS FET. Description. Features. Outline. Absolute Maximum Ratings
Silicon P Channel MOS FET Datasheet R7DS395EJ3 (Previous: REJ3G848-2) Rev.3. May 16, 211 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary
More informationUSER S MANUAL. Reference Documents. Key Features. Amplifier Configuration. Power Supplies (Figure 1) ISL2819xEVAL1Z. (Figure 2) Evaluation Board
USER S MANUAL ISL2819xEVAL1Z Evaluation Board The ISL2819xEVAL1Z evaluation board is a design platform containing all the circuitry needed to characterize critical performance parameters of the ISL2819
More informationRJH60F7BDPQ-A0. Preliminary Datasheet. 600V - 50A - IGBT High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJH6F7BDPQ-A 6V - 5A - IGBT High Speed Power Switching Datasheet R7DS677EJ2 Rev.2. Nov 2, 24 Features Low collector to emitter saturation voltage V CE(sat) =.35 V typ. (at I C = 5 A, V GE = 5 V, Tj = 25
More informationBCR20FM-12LB. Preliminary Datasheet. 600V - 20A - Triac Medium Power Use. Features. Outline. Applications. Maximum Ratings. R07DS0889EJ0100 Rev.1.
BCR2FM-12LB 6V - 2A - Triac Medium Power Use Datasheet R7DS889EJ1 Rev.1. Features I T (RMS) : 2 A V DRM : 6 V Tj: 15 C I FGTI, I RGTI, I RGTIII : 3 ma (2mA) Note5 Insulated Type Planar Passivation Type
More informationRJP30E3DPP-M0. Preliminary Datasheet. Silicon N Channel IGBT High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJP3E3DPP-M Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS353EJ2 Rev.2. Apr 5, 2 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage V CE(sat) =.6
More informationData Sheet. DUAL P-CHANNEL MOSFET 20 V, 3.0 A, 79 mω. Description. Features. Ordering Information. Absolute Maximum Ratings (T A = 25 C)
μpa267tr DUAL P-CHANNEL MOSFET 2 V, 3. A, 79 mω Data Sheet R7DS833EJ Rev.. Apr 5, 23 Description The μpa267tr is Dual P-channel MOS Field Effect Transistors for switching application. This device features
More informationBCR3PM-12LA. Preliminary Datasheet. Triac. Low Power Use. Features. Outline. Applications. Maximum Ratings
Triac Low Power Use Datasheet RDS9EJ (Previous: REJG1-) Rev.. Features I T (RMS) : A V DRM : 6 V I FGTI, I RGTI, I RGT III : ma (1 ma) Note Viso : V Insulated Type Planar Passivation Type UL Recognized
More informationPart Number Lead Plating Packing Package µpa502ct-t1-a/at -A : Sn-Bi, -AT : Pure Sn 3000p/Reel SC-74A (5pMM)
µpa52ct N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R7DS277EJ2 Rev.2. Jul 6, 25 Description The µpa52ct, N-channel vertical type MOSFET designed for general-purpose switch, is a device which
More informationRJK0351DPA. Preliminary Datasheet. 30V, 40A, 4.2m max. N Channel Power MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJK35DPA V, A,.2m max. N Channel Power MOS FET High Speed Power Switching Datasheet R7DS9EJ Rev.. Mar 9, 23 Features High speed switching Capable of.5 V gate drive Low drive current High density mounting
More informationS7G2 MCUs Oscillation Stop Detection using CAC
Application Note Renesas Synergy Platform S7G2 MCUs Oscillation Stop Detection using CAC R01AN3185EU0101 Rev.1.01 Introduction This application note explains how to use the Clock Frequency Accuracy Measurement
More informationOld Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April st, 2, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over
More informationData Sheet. P-channel MOSFET 30 V, 14 A, 7.0 mω. Description. Features. Ordering Information. Absolute Maximum Ratings (T A = 25 C) Thermal Resistance
Data Sheet μpa2736gr P-channel MOSFET 3 V, 14 A, 7. mω R7DS868EJ1 Rev.1. Aug 28, 212 Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
More informationDiode NC 2. Cathode 3. Anode, Collector 4. Emitter 5. Gate IGBT. Note1. Note1
Datasheet RJQ68DPM 6V - A - IGBT and Diode High Speed Power Switching R7DS87EJ Rev.. Jul 7, 22 Features Low collector to emitter saturation voltage V CE(sat) = 2.65 V typ. (I C = 25 A, V GE = 5 V, ) Built
More informationUnit Repetitive peak off-state voltage Note1 V DRM 800 V Non-repetitive peak off-state voltage Note1 V DSM 960 V Notes: 1. Gate open.
Triac Medium Power Use Features I T (RMS) : 16 A V DRM : V I FGTI, I RGTI, I RGT III : 5 ma or 35mA (I GT item:1) High Commutation V iso : 2 V Datasheet R7DS55EJ1 Rev.1. The Product guaranteed maximum
More informationRJK0328DPB-01. Preliminary Datasheet. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
RJK328DPB- Silicon N Channel Power MOS FET Power Switching Datasheet R7DS264EJ5 (Previous: REJ3G637-4) Rev.5. Mar, Features High speed switching Capable of 4.5 V gate drive Low drive current High density
More information1. Driver Functional Principle Receiver Functional Principle... 4
COMMON INFORMATION RS-485 TB506 Rev.0.00 Abstract The RS-485 standard specifies the electrical characteristics of differential drivers and receivers in multipoint networks but does not explain their functional
More informationRJH60D1DPP-E0. Preliminary Datasheet. 600V - 10A - IGBT Application: Inverter. Features. Outline. Absolute Maximum Ratings. R07DS0893EJ0100 Rev.1.
RJH6DDPP-E 6V - A - IGBT Application: Inverter Datasheet R7DS893EJ Rev.. Nov, 22 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V CE(sat) =.9 V typ. (at I
More informationRJH1CV6DPK. Preliminary Datasheet. 1200V - 30A - IGBT Application: Inverter. Features. Outline. Absolute Maximum Ratings. R07DS0747EJ0300 Rev.3.
Datasheet RJHCV6DPK 2V - 3A - IGBT Application: Inverter R7DS747EJ3 Rev.3. Feb 4, 23 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V CE(sat) =.8 V typ. (at
More informationRJK60S4DPE. Preliminary Datasheet. 600V - 16A - SJ MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJK6SDPE 6V - 6A - SJ MOS FET High Speed Power Switching Datasheet R7DS733EJ2 Rev.2. Oct 2, 22 Features Superjunction MOSFET Low on-resistance R DS(on) =.23 typ. (at I D = 8 A, V GS = V, Ta = 25 C) High
More informationBCR40RM-12LB. Preliminary Datasheet. Triac Medium Power Use. Features. Outline. Applications. Maximum Ratings. R07DS0516EJ0100 Rev.1.00.
1 2 3 BCR4RM-12LB Triac Medium Power Use Features I T (RMS) : 4A V DRM : 6 V Tj: 15 C I FGTI, I RGTI, I RGT :5 ma Viso:2V Insulated Type Planar Passivation Type Datasheet R7DS516EJ1 Rev.1. Oct 14, 211
More informationPart No. Lead Plating Packing Package. 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Data Sheet μpa2815t1s P-channel MOSFET 3 V, 21 A, 11 mω R7DS777EJ11 Rev.1.1 May 28, 213 Description The μpa2815t1s is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
More informationPreliminary Data Sheet MOS FIELD EFFECT TRANSISTOR. Description. Features. Ordering Information. Absolute Maximum Ratings (T A = 25 C)
Preliminary Data Sheet MOS FIELD EFFECT TRANSISTOR R7DS755EJ Rev.. Description The is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion
More informationDATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1.9 db TYP. @ f = GHz, VCE = 1 V, IC = ma High Gain S1e =
More informationDATA SHEET MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD. face to perforation side of the tape.
DATA SHEET FEATURES Low Noise, High Gain Operable at Low Voltage Small Feed-back Capacitance Cre =. pf TYP. Built-in Transistors ( SC959) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µpa86t
More informationWashing machine, electric fan, air cleaner, other general purpose control applications
7V-.8A-Triac Low Power Use Features I T (RMS) :.8 A V DRM :7 V I FGTI, I RGTI, I RGTIII : 5 ma Planar Passivation Type Surface Mounted Type Completed Pb Free Datasheet R7DS258EJ3 Rev.3. Outline RENESAS
More informationDATA SHEET NE97833 / 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER. Parameter Symbol Test Conditions MIN. TYP. MAX.
DATA SHEET Silicon Transistor NE97833 / SA978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High ft (in milimeters) ft = 5.5 GHz TYP. Se =. db TYP. @f =. GHz, VCE = V,
More information1 2 3 E. Note1. Note1
Datasheet RJH6TDPQ-A 6V - 3A - IGBT Application:Current resonance circuit R7DS9EJ2 Rev.2. Apr 2, 2 Features Optimized for current resonance application Low collector to emitter saturation voltage V CE(sat)
More informationDATA SHEET NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD The NE46234 / 2SC4703 is designed
More informationDATA SHEET NE68030 / 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE683 / SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD The NE683 / SC8 is a low supply voltage
More informationJEITA Part No. 4-pin power minimold (Pb-Free) Note 1 kpcs/reel CAUTION
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES Low distortion: IM2 = 59.0 db TYP., IM3 = 82.0 db TYP. @, IC = 50 ma Low noise NF = 1.5 db TYP. @,
More informationDATA SHEET NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DATA SHEET FEATURE Ideal for medium-output applications High gain, low noise Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 5 C) PARAMETER SYMBOL RATING UNIT
More informationL1A. Freq. SS Comp GND GND GND. C5 27nF. C6 4.7nF. R3 10k. FIGURE 1. ISL97656 SEPIC SCHEMATIC FOR 3V to 12V IN TO 3.3V OUT AT 1A
APPLICATION NOTE ISL97656 SEPIC for 3V IN to 2V IN to 3.3V OUT at A Application AN379 Rev 0.00 Introduction There are several applications where one needs to generate a constant output voltage which is
More informationDATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD (8) High ft: ft = GHz TYP. @, IC = ma, f = GHz Low noise
More informationRQK0203SGDQA. Preliminary Datasheet. Silicon N Channel MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS0303EJ0500 Rev.5.
Datasheet RQK3SGDQ Silicon N Channel MOS FET Power Switching R7DS33EJ5 Rev.5. Jan, Features Low on-resistance R DS(on) = 68 mω typ (V GS =.5 V, I D =.5 ) Low drive current High speed switching.5 V gate
More informationDATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
DATA SHEET The µpa801t has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain
More informationDATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain S1e = 1 db TYP.
More informationPart Number Order Number Package Quantity Marking Supplying Form NE3520S03-T1C NE3520S03-T1C-A S03 package 2 kpcs/reel (Pb-Free) 10 kpcs/reel
Data Sheet NE3520S03 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0029EJ0100 Rev.1.00 FEATURES Low noise figure and high associated gain: NF = 0.65 db TYP., G a = 13.5 db TYP. @ f = 20 GHz,
More informationDATA SHEET NE68018 / 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE688 / SC53 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD High Gain Bandwidth Product (ft = GHz TYP.)
More informationAPPLICATION NOTE. Introduction. Features. Theory of Operation. Conclusions. Typical 3.3V Performance
APPLICATION NOTE A Complete Analog-to-Digital Converter AN9326 Rev. 0 Introduction The current data acquisition marketplace has an ever increasing demand for integrated circuits capable of operating with
More informationDATA SHEET NE68019 / 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION DATA SHEET The NE6819 / SC8 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current
More informationRQJ0303PGDQA. Preliminary Datasheet. Silicon P Channel MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
Datasheet RQJ33PGDQ Silicon P Channel MOS FET Power Switching R7DS295EJ5 (Previous: REJ3G272-4) Rev.5. Features Low on-resistance R DS(on) = 54 mω typ (V GS = V, I D =.6 ) Low drive current High speed
More informationType No. Access time Package R1RW0416DGE-0PI 10ns. 400-mil 44-pin plastic SOJ (44P0K) R1RW0416DGE-2PI 12 ns R1RW0416DSB-0PI 10 ns
Wide Temperature Range Version 4M High Speed SRAM (256-kword 16-bit) Datasheet REJ03C0109-0201 Rev.2.01 Description The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword 16-bit. It has realized
More informationGaAs Integrated Circuit for L, S-Band SPDT Switch
GaAs Integrated Circuit for L, S-Band SPDT Switch Preliminary Data Sheet R9DSEJ4 Rev.4. DESCRIPTION The μpg4tb is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for
More informationRQJ0203WGDQA. Preliminary Datasheet. Silicon P Channel MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
Datasheet Silicon P Channel MOS FET Power Switching R7DS292EJ4 (Previous: REJ3G39-3) Rev.4. Features Low on-resistance R DS(on) = 42 m typ (V GS =.5 V, I D =. ) Low drive current High speed switching 2.5
More informationDATA SHEET NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
FEATURES Low noise and high gain DATA SHEET NPN SILICON RF TRANSISTOR NE8634 / SC337 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD NF =. db TYP., Ga
More information2SK E. Data Sheet. 1500V - 2A - MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS1275EJ0200 Rev.2.
SK5-8-E 5V - A - MOS FET High Speed Power Switching Data Sheet R7DS75EJ Rev.. Features High breakdown voltage (V DSS = 5 V) High speed switching Low drive current Outline RENESAS Package code: PRSSZD-A
More informationUnit Repetitive peak off-state voltage Note1 V DRM 600 V Non-repetitive peak off-state voltage Note1 V DSM 720 V
BCR8PM-1LG Triac Medium Power Use Features I T (RMS) : 8 A V DRM : V I FGTI, I RGTI, I RGT III : ma V iso : V Datasheet RDS1EJ (Previous: REJG18-) Rev.. Sep 1, 1 The Product guaranteed maximum junction
More informationDATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION DATA SHEET SILICON TRANSISTOR NE68519 / 2SC51 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD The NE68519 / 2SC51 is an NPN epitaxial silicon transistor designed for use in low
More informationHD74LV1GW16ACME W J. Data Sheet. Dual Buffer. Description. Features. Outline and Article Indication. Function Table. R04DS0032EJ0300 Rev.3.
HD74V1GW16 Dual Buffer Data Sheet R04DS0032EJ0300 Rev.3.00 Description The HD74V1GW16 has dual buffer in a 6 pin package. ow voltage and high-speed operation is suitable for the battery powered products
More informationRJH60D2DPP-M0. Preliminary Datasheet. 600V - 12A - IGBT Application: Inverter. Features. Outline. Absolute Maximum Ratings. R07DS0160EJ0400 Rev.4.
RJH6D2DPP-M 6V - 2A - IGBT Application: Inverter Datasheet R7DS6EJ Rev.. Apr 9, 22 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V CE(sat) =.7 V typ. (at
More informationDATA SHEET NE67739 / 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
FEATURE High gain, low noise Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) DATA SHEET PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9
More informationIntroduction... 2 Optocoupler Overview... 3 Effects of System Transients... 3 Effects of EMI... 6 Conclusion... 6
APPLICATION NOTE Use of Optocouplers in Battery AN1975 Rev 0.00 Abstract Optocouplers can present challenges when used in noisy environments. These devices are often used to provide an enable function
More information2SK3000. Data Sheet. Silicon N Channel MOS FET Low Frequency Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS1134EJ0400 Rev.4.
Data Sheet SK000 Silicon N Channel MOS FET Low Frequency Power Switching R07DS4EJ0400 Rev.4.00 Jan 0, 04 Features Low on-resistance R DS(on) = 0.6 Ω typ. (V GS = 0 V, I D = 40 m) 4 V gate drive devices.
More informationDATA SHEET NE67818 / 2SC5752. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) 4-PIN SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE67818 / 2SC72 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (6 mw) 4-PIN SUPER MINIMOLD Ideal for medium output power amplification PO
More informationAdjustment/control of industrial or home-use electronic equipment, such as VTR camera, VTR set, TV, and CRT display.
M62353P/FP/GP 8-bit 8ch D/A Converter with Buffer Amplifiers Description Datasheet The M62353 is an integrated circuit semiconductor of CMOS structure with 8 channels of built-in D/A converters with output
More informationDATA SHEET NE68119 / 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION DATA SHEET SILICON TRANSISTOR NE68119 / SC7 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD The NE68119 / SC7 is an NPN epitaxial silicon transistor designed for use in low noise
More informationNPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD. Part Number Quantity Supplying Form
FEATURES NPN SILICON RF TRANSISTOR NE678M4 / 2SC73 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (6 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD Ideal for medium output power amplification
More informationNP40N10YDF, NP40N10VDF, NP40N10PDF
Data Sheet NPNYDF, NPNVDF, NPNPDF V A N-channel Power MOS FET Application: Automotive R7DS36EJ2 Rev.2. May 3, 23 Description These products are N-channel MOS Field Effect Transistors designed for high
More informationBCR2PM-14LE. Preliminary Datasheet. 800V 2A - Triac. Low Power Use. Features. Outline. Applications. Precautions on Usage.
8V A - Triac Low Power Use Datasheet RDSEJ Rev.. Features I T (RMS) : A V DRM : 8 V (Tj = 1 C) I FGT I, I RGT I, I RGT III : 1 ma Planar Passivation Type The product guaranteed maximum junction temperature
More informationDATA SHEET NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Document No. P6EJVDS (th edition) Date Published March 997 N DATA SHEET SILICON TRANSISTOR NE68 / SC8 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68 / SC8 is an NPN
More informationNV4V31SF. Data Sheet R08DS0070EJ0100 Rev Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source DESCRIPTION FEATURES APPLICATIONS
Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source Data Sheet R08DS0070EJ0100 Rev.1.00 DESCRIPTION The is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
More informationRJF0605DPD Description Features Outline Absolute Maximum Ratings Item Symbol Ratings Unit
RJF65DPD Silicon N Channel MOS FET Series Power Switching Description Datasheet This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over
More informationThe NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Part No. LEAD PLATING PACKING Package
NP75P3YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R7DS2EJ2 Rev.2. Mar 6, 2 Description The NP75P3YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
More informationDATA SHEET NE677M04 / 2SC5751. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE677M4 / 2SC71 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (3 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD Ideal for medium output power
More information3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
FEATURES HIGH GAIN: db at 9 to MHz Typical HIGH OUTPUT POWER: PSAT = +. dbm at 9 MHz + dbm at MHz LOW BIAS VOLTAGE: 3. V Typical,. V Minimum SUPER SMALL PACKAGE: SOT-33 TAPE AND REEL PACKAGING OPTION AVAILABLE
More information