19 th INTERNATIONAL CONGRESS ON ACOUSTICS MADRID, 2-7 SEPTEMBER 2007 CHALLENGES OF HIGH SNR (SIGNAL-TO-NOISE) SILICON MICROMACHINED MICROPHONES
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1 19 th INTERNATIONAL CONGRESS ON ACOUSTICS MADRID, 2-7 SEPTEMBER 2007 CHALLENGES OF HIGH SNR (SIGNAL-TO-NOISE) SILICON MICROMACHINED MICROPHONES PACS: Gy Dr. Füldner, Marc 1 ; Dr. Dehé, Alfons 2 1 Infineon Technologies AG, Automotive, Industrial & Multimarket, Am Campeon 1-12, Neubiberg, Germany; marc.fueldner@infineon.com 2 Infineon Technologies AG, Automotive, Industrial & Multimarket, Am Campeon 1-12, Neubiberg, Germany; alfons.dehe@infineon.com ABSTRACT We present the product development of silicon micromachined microphones towards high reliability and electro-acoustical performance at Infineon. The temperature sensitivity characteristic within the operating temperature range is shown as well as the long-term robustness against temperature extremes of -40 C and +125 C. The challenges of high SNR (signal-to-noise) microphones are discussed in respect to the MEMS (micro-electricalmechanical system) design and packaging technology. Fabricated silicon microphones with SNRs up to 63 db(a) and a flat frequency response up to 20 khz are presented in good agreement with a compact system model. INTRODUCTION Microphones based on silicon semiconductor technology have been subject to research for many years [1] but since 2003 silicon microphones are introduced into mass production for mobile phone applications [2]. Today, Silicon Microphones are gaining strong market share against traditional electret condenser microphones (ECM). With more than 100 million units in 2006, the market for silicon microphones is forecasted to grow rapidly meaning every third microphone in 2009 will be based on silicon MEMS technology [3,4]. Compared to ECMs, a major advantage of condenser silicon microphones is their robustness against high temperatures and humidity. In a condenser silicon microphone, the microphone capacitor build by a flexible membrane and a rigid back plate is charged by a constant voltage supplied by an integrated ASIC (application-specific integrated circuit). Silicon microphones even withstand standard lead free reflow soldering temperatures of up to 260 C in fully automatic surface mount production lines. Offering increased reliability and reduced system costs due to the surface mount technology ability is a benefit that outperforms the ECMs. We exemplify the robustness against high temperatures of the silicon microphone technology on the basis of Infineon s silicon microphone SMM310 [5]. Besides the ability of SMT (surface mount technology) processing, next generation silicon microphones in multimedia applications such as video telephony and voice recording have to satisfy the demand for high audio quality such as high signal-to-noise ratios > 60 db(a) and a flat frequency response up to 20 khz. Introductorily, we will discuss the challenges in the development of high SNR silicon microphones in respect to the MEMS design and assembly technology by means of a lumpedelement network model of condenser microphones. We demonstrate the strong interaction between sensor performance and packaging regarding sensitivity, frequency response and SNR by characterization of fabricated silicon microphone assembly variants: the silicon microphone SMM310 with a small (chip cavity) back volume and the silicon microphone SMM340 with a large (package cavity) back volume. 1
2 TEMPERATUE ROBUSTNESS OF INFINEON S SILICON MICROPHONE SMM310 Construction of silicon microphone SMM310 Infineon s silicon microphone SMM310 (Figure 1) is designed as surface mountable alternative to ECMs with a comparable signal-to noise-ratio of typical 59 db(a) and a sensitivity of typical -42dBV/Pa at smaller size (4.72 mm x 3.76 mm x 1.25 mm). The microphone consists of a MEMS sensor chip and an ASIC chip, both assembled on a printed wiring board (PWB).The current consumption is typically only 75 µa for a power supply voltage range from V. The MEMS sensor chip transforms acoustical sound pressure variations to capacitive variations by the vibration of a flexible membrane in relation to a fixed back plate. Figure 2 shows a crosssectional schematic and electron microscopy images of the MEMS chip. The 2 µm thick rigid back plate on the top side is made of polycrystalline silicon and contains perforation holes covering 30% of the area to reduce squeeze-film damping. The polycrystalline silicon membrane with a thickness of 300 nm and a diameter of 1 mm is spanned over the chip cavity which is etched by an anisotropic DRIE (Deep Reactive Ion Etching) process. The 2 µm height air gap between the electrodes is realized by the sacrificial layer surface micromachining technique. Figure 1.- Open microphone module with MEMS sensor chip, ASIC chip covered by a protective silicon (glob top) and PWB substrate (left), microphone top view with metal lid (middle) and bottom view of the PWB with SMT solder pads (right). The ASIC supplies the charge voltage for the MEMS capacitor and provides the impedance conversion of the high impedance MEMS sensor signal to a low impedance output signal. MEMS, ASIC and top metallisation of the PWB are electrically connected by wire bonding. The connection to the solder pads at the bottom of the device is realized by vias (vertical interconnect access) through the PWB. The whole construction is covered and electromagnetically shielded by a metallic lid with a sound inlet hole. back plate membrane Figure 2.- Cross-sectional schematic and electron microscopy images of the MEMS chip. Temperature characteristic and robustness State-of-the-Art ECMs use fluorinated ethylene-propylene (FEP) as material for the electret foil which is applied to the back electrode and permanently charged. Because of the limited temperature resistance of FEP foils by discharging and as a consequence loss in sensitivity, ECMs typically specify a maximum storage and operating temperature of 85 C and are soldered by hand. 2
3 Compared to EMCs, condenser silicon microphones are biased internally by the ASIC chip. Also, the membrane and back plate are formed by heat resistant silicon layers. Therefore, no degradation over a wide range of operating and processing temperatures is expected. Figure 3 shows the excellent temperature characteristic and long-term temperature robustness exemplary for the microphone sensitivity kHz [dbv/pa] VDD=1.5 V VDD=2.1 V VDD=3.3V Sensitivity [dbv/pa] Measurement after TCT 2000h Initial measurement Temperature [ C] Frequency [Hz] Figure 3.- Microphone sensitivity over operating temperature (left) and comparison of the sensitivity prior and after temperature cycling for 2000 hours. The measurement of the sensitivity at a frequency of 1 khz over the temperature range was performed with the supply voltage VDD as parameter (Figure 3, left graph). Over the whole temperature range from -40 C to +100 C, the maximum change of the sensitivity is merely about 1 dbv/pa. For the evaluation of the long-term temperature stability and robustness against rapid temperature changes, microphones were cyclically exposed to minimum and maximum storage ratings of -40 C and +125 C, respectively. The overall test duration was up to 2000 hours (~3 months), whereby each temperature stage lasted 30 min meaning 2000 cycles. Prior temperature cycling, the devices were initially measured and assembled on test boards. To emulate customer fabrication conditions, the microphones on test boards were pre-aged and 3 times reflow soldered at a peak temperature of 260 C for lead-free soldering. As shown in Figure 3, right graph, the change in sensitivity is less than 1 db over the whole test duration. MICROPHONE COMPACT SYSTEM MODELLING IN CONSIDERATION OF HIGH SNR Microphone system model According to the formal analogy between mechanical, acoustical and electrical systems, the modelling and optimization of silicon microphones is performed by using a mechano-acoustical circuit representation of the MEMS sensor chip and package in combination with the electrical circuit design of the ASIC chip (Figure 4). In the field of microphones, network modelling has been extensively used [6,7]. Mass, stiffness and damping of the MEMS and package are represented by electrical inductors, capacitors and resistors. The elements are calculated analytical or parameterized by finite elements simulation results [8]. The interface between the physical domains is implemented by an ideal transducer element. The network model covers the whole transducer chain from acoustics over micromechanics to the amplifiers output and therefore provide all key parameters like mechanical noise, electrical noise, sensitivity and frequency response. All input parameters of the model are based on known geometrical data, material properties or natural constants which allow first-time-right design without the need of parameter fitting from demonstrator sampling. Due to the simplification to linear lumped elements, the comparable short computation time even allows extensive optimization 3
4 sequences and device variation investigations by Monte Carlo simulations. An enhancement of the model for directional microphones was presented in [9]. p(f) mechano-acoustical network MEMS & package R in M in ideal transducer electrical circuit C in p bp C gap p m M bp M p C bp R p C Rgap m M vent R vent p x U C mic R g R s U(f) M m +M rad R rad C v Figure 4.- Schematic of the microphone compact system model. Simplified solution for the sensitivity A simplified solution for the sensitivity S [V/Pa] is given by U S = x 0 0 C eff with C eff C m C V m = 2 A ρ c + V. (Eq. 1) Here, U 0 is the charge voltage of the microphone capacitor with membrane area A and x 0 is the gap between membrane and back plate. ρ is the density of air and c is the speed of sound. The effective microphone compliance C eff is a combination of the quasi-static membrane compliance C m [m/pa] (averaged deflection of the membrane per quasi-static pressure load) and the equivalent compliance built by the trapped back volume V [m 3 ]. For small back volumes, the sensitivity is dominated by the compliance of the back volume V/(ρ*c 2 ). For large back volumes, the sensitivity is approximately given by the membrane compliance. In equation (1) we neglect the frequency shaping effects of low-pass filtering by squeeze-film damping in the air gap, highpass filtering due to the ventilation hole in the membrane and the resonance peak due to the packaging sound port. Simplified solution for the noise A simplified expression for the microphone noise density N mic [V 2 /Hz] is given by the contribution of the mechano-acoustical noise of the MEMS transducer N MEMS and the electrical noise density of the ASIC N ASIC : 2 N = N + N S (4 k T R ) + N ( R, K, g ). (Eq. 2) mic MEMS ASIC p Main contributions to the noise coming from the ASIC are the design and technology dependent flicker noise (represented by the flicker noise coefficient K f ), noise from the bias element represented by R g and transistor channel noise (depending on the transconductance g m ). Calculations and optimizations of the ASIC contributions are described in [7, 10]. The mechano-acoustical noise voltage is proportional to the microphone sensitivity and the fluidic element R p representing the air streaming equivalent resistance of the perforation holes in the back plate. In equation (2), mechano-acoustical noise contributions from the ventilation hole, sound port and the radiation resistance are neglected. Challenges of High SNR In respect to MEMS Design and Assembly, high SNR is achievable with high quasi-static membrane compliance C m at comparable small membrane areas and large back volumes. Exemplary, Figure 5 shows the SNR depending on the quasi-static membrane compliance C m and the available back volume V. Independently, the fluidic resistance R p needs to be reduced to a minimum by the perforation design. This can be achieved by an increased number of perforation holes and/or larger hole 4 ASIC g f m
5 cross section. Limiting constrains are sufficient mechanical robustness of a highly perforated back plate and the trade-off due to the loss of active capacitance. V [mm 3 ] Cm [nm/pa] SNR [db(a)] Figure 5.- Signal-to-noise as a function of membrane compliance C m and back volume V. For increased available back volumes, the sensitivity and SNR is higher in any case. But, the optimum SNR is only achieved with adjusted membrane compliances. In the calculation it was taken into account that due to the electrostatic pull-in effect, the charge voltage U 0 has to be lowered for increasing membrane sensitivities at a given air gap height. The optimum compliance can be approximated by the relation C m =V/(Aρc 2 ). Beyond this optimum compliance, the advantage of increased membrane compliance is overcompensated by the need of a reduced strength of the electrostatic field in the air gap (term U 0 /x 0 in equation (1)) due to the pull-in effect. For the example of Figure 5, the parameter field of maximum SNR is relative widely spread indicating that the acoustical noise is dominant and the SNR is given by the microphone self-noise depending on the fluidic resistance R p. By the integration of more function into the ASIC like pre-amplification stages, differential outputs or analog-to-digitalconverting, then again the optimum SNR plateau will be reached only at higher back volume and membrane compliances. The relation between SNR and back volume is not specific for the silicon microphone technology but also valid for ECMs. For ECMs, the membrane area is typically even larger which means according equation (1) the need for higher back volumes assuming comparable membrane compliances. CHARACTERIZATION OF MICROPHONE SMM340 WITH PACKAGE CAVITY BACK VOLUME COMPARED TO MICROPHONE SMM310 WITH CHIP CAVITY BACK VOLUME Construction of silicon microphone SMM340 Besides already above described silicon microphone SMM310 with a back volume equal to the back side etched MEMS chip cavity, silicon microphones SMM340 with the package volume serving as back volume are fabricated and characterized (Figure 6). Figure 6.- Silicon microphone module SMM340 (4.72 mm x 3.76 mm x 1.25 mm) with sound port hole below the MEMS sensor chip for maximum back volume. 5
6 In this assembly configuration the MEMS sensor is directly attached above a sound inlet hole in the PWB of the package. Thereby, the back volume is increased to ~8 mm 3 compared to the SMM310 chip cavity volume of ~0.25mm 3. MEMS and ASIC chip are identical to the SMM310 microphone module. As expected by the simulation, the sensitivity and SNR is strongly increased due to the increased back volume (Figure 7). Besides the SNR, the sensitivity and frequency response is improved. Typically, the mechanical resonance of the membrane is far above the packaging Helmholtz resonator formed by the sound hole in the cap and the air volume in front of the microphone chip. Since the front volume is smaller in the SMM340 package, the resonance frequency is shifted to a higher frequency resulting in an almost flat frequency response in the audio band up to 20 khz. SNR [db(a)] Simulation Measurement Back volume Sensitivity [dbv/pa] normalized sensitivity [dbv/pa] Simulation Measurement SMM310, V=0.25mm 3 SMM340, V=8mm Frequency [Hz] Figure 7.- Simulated SNR, sensitivity and frequency response depending on the back volume and measurements with back volumes of 0.25 mm 3 and 8 mm 3, respectively. CONCLUSIONS AND OUTLOOK As a key advantage in contrast to ECMs, condenser silicon microphones show excellent temperature behaviour. High performance silicon microphones need accurate modelling and optimization of the system. In particular, the packaging in combination with the MEMS design strongly influences the acoustics. Using identical chip-sets, an improvement in SNR of 3 db by the packaging technology was demonstrated. Calculations on basis of a lumped-element model of silicon microphones give an estimated additional improvement by 3 db if the membrane compliance is adjusted to a higher membrane compliance (> 10 nm/pa), too. This compliance would correspond to a membrane tensile stress below 10 MPa which is expected to be difficult to handle technologically in terms of process stability. Taking into account the limited area in advanced small packages, an increase of the membrane compliance by enlarged membrane diameters is also limited. A promising approach is the use of advanced membrane designs having spring-type structures or corrugations as reported in [8]. References: [1] G.M. Sessler: Silicon microphones, Journal of the Audio Engineering Society 44, p.16-22, [2] [3] Wicht Technology Consulting, Think Small, Issue 1, Volume 1, April 2006 [4] ABI Research, Micro-Electro-Mechanical Systems (MEMS) in Mobile Phones, 2006 [5] [6] M. Persen, W. Olthuis, P. Bergveld: High-Performance Condenser Microphone with Fully Integrated CMOS Amplifier and DC-DC Voltage Converter, Journal of Microelectromechanical Systems, Vol. 7, No. 4, 1988, pp [7] M. Füldner: Modellierung und Herstellung kapazitiver Mikrofone in BiCMOS-Technologier, Phd thesis, University of Erlangen, 2004, Dissertation_Fueldner.pdf [8] M. Füldner, A. Dehe, R. Aigner, and R. Lerch: Analytical Analysis and Finite Element Simulation of Advanced Membranes for Silicon Microphones. IEEE Sensors Journal, 5(5): , [9] M. Füldner and A. Dehé, Development of Directional Silicon Microphones, CFA-DAGA2004/208 Strassbourg, 23th March, 2004 [10] M. Brauer, A Dehé, M. Füldner, S. Barzen and R. Laur: Improved signal-to-noise ratio of Silicon microphones by a high-impedance resistor, J. Micromech. Microeng. 14 (2004), pp
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