Lecture 19 - Transistor Amplifiers (I) Common-Source Amplifier. April 24, 2001

Size: px
Start display at page:

Download "Lecture 19 - Transistor Amplifiers (I) Common-Source Amplifier. April 24, 2001"

Transcription

1 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 191 Lecture 19 Transistor Amplifiers (I) CommonSource Amplifier April 24, 2001 Contents: 1. Amplifier fundamentals 2. Commonsource amplifier 3. Commonsource amplifier with currentsource supply Reading assignment: Howe and Sodini, Ch. 8,

2 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 192 Key questions What are the key figures of merit of an amplifier? How can one make a voltage amplifier with a single MOSFET and a resistor? How can this amplifier be improved?

3 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture Amplifier fundamentals Goal of amplifiers: signal amplification. V v OUT v IN vout output signal v IN V input signal Features of amplifier: Output signal is faithful replica of input signal but amplified in magnitude. Active device is at the heart of amplifier. Need linear transfer characteristics for distortion not to be introduced.

4 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 194 Signal could be represented by current or voltage four broad types of amplifiers: R S voltage v s v amplifier out R S i out transconductance amplifier i s R S transresistance amplifier v out i out i s R S current amplifier

5 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 195 More realistic transfer characteristics: v OUT Q output signal v IN input signal Transfer characteristics linear over limited range of voltages: amplifier saturation. Amplifier saturation limits signal swing. Signal swing also depends on choice of bias point, Q (also called quiescent point or operating point). Other features desired in amplifiers: Low power consumption. Wide frequency response [will discuss in a few days]. Robust to process and temperature variations. Inexpensive: must minimize use unusual components, must be small (in Si area)

6 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture CommonSource Amplifier Consider the following circuit: V =V DD R D i R signal source R S i D signal load v OUT V GG V =V SS Consider it first unloaded by. How does it work? V GG, R D and W/L of MOSFET selected to bias transistor in saturation and obtain desired output bias point (i.e. V OUT = 0). v GS i D i R v out A v = v out < 0; output out of phase from input, but if amplifier well designed, A v > 1. [watch notation: v OUT (t) =V OUT v out (t)]

7 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 197 Load line view of amplifier: I R =I D load line V DD V SS R D V GG V SS =V DD V SS V GG V SS 0 V SS V DD V GG V SS =V T V OUT Transfer characteristics of amplifier: V OUT V DD V SS 0 V T V DD V SS V GG V SS Want: Bias point calculation; smallsignal gain; limits to signal swing frequency response [in a few days]

8 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 198 Bias point: choice of V GG, W/L, and R D to keep transistor in saturation and to get proper quiescent V OUT. Assume MOSFET is in saturation: I D = W 2L µ nc ox (V GG V SS V T ) 2 If we select V OUT =0: I R = V DD V OUT R D Then: I D = I R = W 2L µ nc ox (V GG V SS V T ) 2 = V DD R D V GG = 2V DD R D W L µ nc ox V SS V T

9 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 199 Smallsignal voltage gain: draw smallsignal equivalent circuit model: R D G v in v gs gm v gs D r o v out S v in gm v in r o //R D v out v out = g m v in (r o //R D ) Then unloaded voltage gain: A vo = v out v in = g m (r o //R D )

10 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1910 Signal swing: V DD signal source R S R D v OUT V GG V SS Upswing: limited by transistor going into cutoff: v out,max = V DD Downswing: limited by MOSFET entering linear regime: V DS,sat = V GS V T or v out,min V SS = V GG V SS V T Then: v out,min = V GG V T

11 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1911 Effect of input/output loading: V DD signal source R S R D i R i D i L v OUT V GG V SS Bias point not affected because selected V OUT =0. Upswing limited by resistive divider: v out,max = V DD R D Downswing not affected by loading Voltage gain: input loading (R S ): no effect because gate does not draw current; output loading ( ): detracts from voltage gain because it draws current. A v = g m (r o //R D // ) <g m (r o //R D )

12 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1912 Generic view of loading effect on smallsignal operation: Twoport network view of smallsignal equivalent circuit model of voltage amplifier: R in is input resistance R out is output resistance A vo is unloaded voltage gain R s R out v in R in Avo v in v out input loading unloaded circuit output loading Voltage divider at input: v in = R in R in R S Voltage divider at output: Loaded voltage gain: v out = A vo v in R out A v = v out = R in A vo R in R S R out

13 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1913 Calculation of input resistance, R in : load amplifier with apply test voltage (or current) at input, measure test current (or voltage) For commonsource amplifier: i t v t v gs g m v gs r o //R D i t =0 R in = v t i t = No effect of loading at input.

14 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1914 Calculation of output resistance, R out : load amplifier at input with R S apply test voltage (or current) at output, measure test current (or voltage) For commonsource amplifier: R S v gs g m v gs r o //R D i t vt v gs =0 g m v gs =0 v t = i t (r o //R D ) R out = v t i t = r o //R D

15 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1915 Twoport network view of commonsource amplifier: R s R out v in R in Avo v in v out input loading unloaded circuit output loading A v = v out = R in A vo = g m (r o //R D ) R in R S R out r o //R D Or: A v = g m (r o //R D // )

16 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1916 Design issues of commonsource amplifier (unloaded): Examine bias dependence: A vo = g m (r o //R D ) g m R D Rewrite A vo in the following way: A vo g m R D = W 2I D L µ V DD nc ox I D V DD ID Then, to get high A vo : V DD I D Both approaches imply R D = V DD I D Consequences of high R D : large R D consumes a lot of Si real state large R D eventually compromises frequency response Also, it would be nice not to use any resistors at all! Need better circuit.

17 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture Commonsource amplifier with currentsource supply V DD i SUP signal source RS i D signal load v OUT V GG V SS Loadline view: i SUP =I D load line V GG V SS =V DD V SS I SUP V GG V SS 0 V SS V DD V GG V SS =V T V OUT

18 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1918 Current source characterized by high output resistance: r oc. Then, unloaded voltage gain of commonsource stage: A vo = g m (r o //r oc ) significantly higher than amplifier with resistive supply. Can implement current source supply by means of p channel MOSFET: V DD V B i SUP signal source R S i D v OUT V GG V SS

19 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1919 Relationship between circuit figures of merit and device parameters Remember: g m = 2 W L µ nc ox I D Then: r o 1 λ n I D L I D Circuit Parameters Device A vo R in R out Parameters g m (r o //r oc ) r o //r oc I SUP W µ n C ox L adjustments are made to V GG so none of the other parameters change CSamp with current supply source is good voltage amplifier (R in high and A v high), but R out high too voltage gain degraded if r o //r oc.

20 6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 1920 Key conclusions Figures of merit of an amplifier: gain signal swing power consumption frequency response robustness to process and temperature variations Commonsource amplifier with resistive supply: tradeoff between gain and cost and frequency response. Tradeoff resolved by using commonsource amplifier with current source supply. Twoport network computation of voltage gain, input resistance and output resistance of amplifier.

Lecture 19 Transistor Amplifiers (I) Common Source Amplifier. November 15, 2005

Lecture 19 Transistor Amplifiers (I) Common Source Amplifier. November 15, 2005 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 19 1 Lecture 19 Transistor Amplifiers (I) Common Source Amplifier November 15, 2005 Contents: 1. Amplifier fundamentals 2. Common source amplifier

More information

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages. November 17, 2005

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages. November 17, 2005 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 20 1 Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages November 17, 2005 Contents: 1. Common source amplifier (cont.) 2. Common drain

More information

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Outline Common drain amplifier Common gate amplifier Reading Assignment: Howe and Sodini; Chapter 8, Sections 8.78.9 6.02 Spring 2009 . Common

More information

Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005

Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005 6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 2 Lecture 2 Multistage Amplifiers (I) Multistage Amplifiers November 22, 2005 Contents:. Introduction 2. CMOS multistage voltage amplifier 3.

More information

Lecture 25 - Frequency Response of Amplifiers (III) Other Amplifier Stages. December 8, 2005

Lecture 25 - Frequency Response of Amplifiers (III) Other Amplifier Stages. December 8, 2005 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 251 Lecture 25 Frequency Response of Amplifiers (III) Other Amplifier Stages December 8, 2005 Contents: 1. Frequency response of commondrain

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Enhancement N-MOS Modes of Operation Mode V GS I DS V DS Cutoff

More information

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Microelectronic Circuits Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 1 MOSFET Construction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 2

More information

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section

More information

4.5 Biasing in MOS Amplifier Circuits

4.5 Biasing in MOS Amplifier Circuits 4.5 Biasing in MOS Amplifier Circuits Biasing: establishing an appropriate DC operating point for the MOSFET - A fundamental step in the design of a MOSFET amplifier circuit An appropriate DC operating

More information

CMOS Cascode Transconductance Amplifier

CMOS Cascode Transconductance Amplifier CMOS Cascode Transconductance Amplifier Basic topology. 5 V I SUP v s V G2 M 2 iout C L v OUT Device Data V Tn = 1 V V Tp = 1 V µ n C ox = 50 µa/v 2 µ p C ox = 25 µa/v 2 λ n = 0.05 V 1 λ p = 0.02 V 1 @

More information

Lecture 11 Digital Circuits (I) THE INVERTER

Lecture 11 Digital Circuits (I) THE INVERTER Lecture 11 Digital Circuits (I) THE INVERTER Outline Introduction to digital circuits The inverter NMOS inverter with resistor pull-up Reading Assignment: Howe and Sodini; Chapter 5, Sections 5.1-5.3 6.12

More information

Lecture 34: Designing amplifiers, biasing, frequency response. Context

Lecture 34: Designing amplifiers, biasing, frequency response. Context Lecture 34: Designing amplifiers, biasing, frequency response Prof J. S. Smith Context We will figure out more of the design parameters for the amplifier we looked at in the last lecture, and then we will

More information

INTRODUCTION TO ELECTRONICS EHB 222E

INTRODUCTION TO ELECTRONICS EHB 222E INTRODUCTION TO ELECTRONICS EHB 222E MOS Field Effect Transistors (MOSFETS II) MOSFETS 1/ INTRODUCTION TO ELECTRONICS 1 MOSFETS Amplifiers Cut off when v GS < V t v DS decreases starting point A, once

More information

ECE315 / ECE515 Lecture 5 Date:

ECE315 / ECE515 Lecture 5 Date: Lecture 5 ate: 20.08.2015 MOSFET Small Signal Models, and Analysis Common Source Amplifier Introduction MOSFET Small Signal Model To determine the small-signal performance of a given MOSFET amplifier circuit,

More information

Chapter 4 Single-stage MOS amplifiers

Chapter 4 Single-stage MOS amplifiers Chapter 4 Single-stage MOS amplifiers ELEC-H402/CH4: Single-stage MOS amplifiers 1 Single-stage MOS amplifiers NMOS as an amplifier: example of common-source circuit NMOS amplifier example Introduction

More information

Multistage Amplifiers

Multistage Amplifiers Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)

More information

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. October 25, 2005

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. October 25, 2005 6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 13-1 Lecture 13 - Digital Circuits (II) MOS Inverter Circuits October 25, 25 Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS

More information

ECE315 / ECE515 Lecture 9 Date:

ECE315 / ECE515 Lecture 9 Date: Lecture 9 Date: 03.09.2015 Biasing in MOS Amplifier Circuits Biasing using Single Power Supply The general form of a single-supply MOSFET amplifier biasing circuit is: We typically attempt to satisfy three

More information

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 22, 2001

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 22, 2001 6.12 - Microelectronic Devices and Circuits - Spring 21 Lecture 13-1 Lecture 13 - Digital Circuits (II) MOS Inverter Circuits March 22, 21 Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS

More information

Review Sheet for Midterm #2

Review Sheet for Midterm #2 Review Sheet for Midterm #2 Brian Bircumshaw brianb@eecs.berkeley.edu 1 Miterm #1 Review See Table 1 on the following page for a list of the most important equations you should know from Midterm #1. 2

More information

Experiment 5 Single-Stage MOS Amplifiers

Experiment 5 Single-Stage MOS Amplifiers Experiment 5 Single-Stage MOS Amplifiers B. Cagdaser, H. Chong, R. Lu, and R. T. Howe UC Berkeley EE 105 Fall 2005 1 Objective This is the first lab dealing with the use of transistors in amplifiers. We

More information

ECE315 / ECE515 Lecture 7 Date:

ECE315 / ECE515 Lecture 7 Date: Lecture 7 ate: 01.09.2016 CG Amplifier Examples Biasing in MOS Amplifier Circuits Common Gate (CG) Amplifier CG Amplifier- nput is applied at the Source and the output is sensed at the rain. The Gate terminal

More information

Lecture 12 - Digital Circuits (I) The inverter. October 20, 2005

Lecture 12 - Digital Circuits (I) The inverter. October 20, 2005 6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 12-1 Lecture 12 - Digital Circuits (I) The inverter October 2, 25 Contents: 1. Introduction to digital electronics: the inverter 2. NMOS inverter

More information

Week 12: Output Stages, Frequency Response

Week 12: Output Stages, Frequency Response ELE 2110A Electronic Circuits Week 12: Output Stages, Frequency esponse (2 hours only) Lecture 12-1 Output Stages Topics to cover Amplifier Frequency esponse eading Assignment: Chap 15.3, 16.1 of Jaeger

More information

EE5310/EE3002: Analog Circuits. on 18th Sep. 2014

EE5310/EE3002: Analog Circuits. on 18th Sep. 2014 EE5310/EE3002: Analog Circuits EC201-ANALOG CIRCUITS Tutorial 3 : PROBLEM SET 3 Due shanthi@ee.iitm.ac.in on 18th Sep. 2014 Problem 1 The MOSFET in Fig. 1 has V T = 0.7 V, and μ n C ox = 500 μa/v 2. The

More information

Lecture 16: Small Signal Amplifiers

Lecture 16: Small Signal Amplifiers Lecture 16: Small Signal Amplifiers Prof. Niknejad Lecture Outline Review: Small Signal Analysis Two Port Circuits Voltage Amplifiers Current Amplifiers Transconductance Amps Transresistance Amps Example:

More information

BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier. Superposition principle (linear amplifier) BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

More information

Lecture 26 Differential Amplifiers (I) DIFFERENTIAL AMPLIFIERS

Lecture 26 Differential Amplifiers (I) DIFFERENTIAL AMPLIFIERS Lecture 6 Differential Amplifiers (I) DIFFERENTIAL AMPLIFIERS Outline 1. Introduction. Incremental analysis of differential amplifier 3. Common-source differential amplifier Reading Assignment: Howe and

More information

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic. Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition

More information

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body

More information

EE 230 Fall 2006 Experiment 11. Small Signal Linear Operation of Nonlinear Devices

EE 230 Fall 2006 Experiment 11. Small Signal Linear Operation of Nonlinear Devices EE 230 Fall 2006 Experiment 11 Small Signal Linear Operation of Nonlinear Devices Purpose: The purpose of this laboratory experiment is to investigate the use of small signal concepts for designing and

More information

Electronic Circuits EE359A

Electronic Circuits EE359A Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 12 1 MOSFET vs. BJT current-voltage characteristic 1.5 10 3 i C ( v) i D ( v) 1 10 3 500 0 2 4 6 8 10 v The drain current

More information

Gechstudentszone.wordpress.com

Gechstudentszone.wordpress.com UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits

More information

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs Integrated Circuit Amplifiers Comparison of MOSFETs and BJTs 17 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) 15 15 6 6 2.7 2.7 C ox (ff/µm 2 )

More information

EECS3611 Analog Integrated Circuit Design. Lecture 3. Current Source and Current Mirror

EECS3611 Analog Integrated Circuit Design. Lecture 3. Current Source and Current Mirror EECS3611 Analog ntegrated Circuit Design Lecture 3 Current Source and Current Mirror ntroduction Before any device can be used in any application, it has to be properly biased so that small signal AC parameters

More information

Analysis and Design of Analog Integrated Circuits Lecture 8. Cascode Techniques

Analysis and Design of Analog Integrated Circuits Lecture 8. Cascode Techniques Analysis and Design of Analog Integrated Circuits Lecture 8 Cascode Techniques Michael H. Perrott February 15, 2012 Copyright 2012 by Michael H. Perrott All rights reserved. Review of Large Signal Analysis

More information

Lecture 11 Circuits numériques (I) L'inverseur

Lecture 11 Circuits numériques (I) L'inverseur Lecture 11 Circuits numériques (I) L'inverseur Outline Introduction to digital circuits The inverter NMOS inverter with resistor pull-up 6.12 Spring 24 Lecture 11 1 1. Introduction to digital circuits:

More information

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1 Lecture 030 ECE4430 Review III (1/9/04) Page 0301 LECTURE 030 ECE 4430 REVIEW III (READING: GHLM Chaps. 3 and 4) Objective The objective of this presentation is: 1.) Identify the prerequisite material

More information

Session 2 MOS Transistor for RF Circuits

Session 2 MOS Transistor for RF Circuits Session 2 MOS Transistor for RF Circuits Session Speaker Chandramohan P. Session Contents MOS transistor basics MOS equivalent circuit Single stage amplifiers Opamp design Session objectives To understand

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small

More information

ECE 340 Lecture 40 : MOSFET I

ECE 340 Lecture 40 : MOSFET I ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 11: Voltage and Current Sources Administrativia Lab 3 this week Please make sure to work through the pre-lab

More information

ECE315 / ECE515 Lecture 8 Date:

ECE315 / ECE515 Lecture 8 Date: ECE35 / ECE55 Lecture 8 Date: 05.09.06 CS Amplifier with Constant Current Source Current Steering Circuits CS Stage Followed by CG Stage Cascode as Current Source Cascode as Amplifier ECE35 / ECE55 CS

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Neamen Microelectronics Chapter 4-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 4 Basic FET Amplifiers Neamen Microelectronics Chapter 4-2 In this chapter, we will: Investigate

More information

ECE 2C Final Exam. June 8, 2010

ECE 2C Final Exam. June 8, 2010 ECE 2C Final Exam June 8, 2010 Do not open exam until instructed to. Closed book: Crib sheet and 2 pages personal notes permitted There are 4 problems on this exam, and you have 3 hours. Use any and all

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN Name: EXAM #3 Closed book, closed notes. Calculators may be used for numeric computations only. All work is to be your own - show your work for maximum partial credit. Data: Use the following data in all

More information

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution CMOS Cascode Transconductance Amplifier Basic topology. Current Supply Topology p-channel cascode current supply is an obvious solution Current supply must have a very high source resistance r oc since

More information

Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section

Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section Objective To analyze and design single-stage common source amplifiers.

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field

More information

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often

More information

Differential Amplifiers. EE105 - Spring 2007 Microelectronic Devices and Circuits. Audio Amplifier Example. Small-Signal Model for Bipolar Transistor

Differential Amplifiers. EE105 - Spring 2007 Microelectronic Devices and Circuits. Audio Amplifier Example. Small-Signal Model for Bipolar Transistor EE105 - Spring 007 Microelectronic Devices and Circuits Lecture 8 Differential Amplifiers Differential Amplifiers General Considerations MOS Differential Pair Cascode Differential Amplifiers Common-Mode

More information

MOSFET Amplifier Configuration. MOSFET Amplifier Configuration

MOSFET Amplifier Configuration. MOSFET Amplifier Configuration MOSFET Amplifier Configuration Single stage The signal is fed to the amplifier represented as sig with an internal resistance sig. MOSFET is represented by its small signal model. Generally interested

More information

EE 140 / EE 240A ANALOG INTEGRATED CIRCUITS FALL 2015 C. Nguyen PROBLEM SET #7

EE 140 / EE 240A ANALOG INTEGRATED CIRCUITS FALL 2015 C. Nguyen PROBLEM SET #7 Issued: Friday, Oct. 16, 2015 PROBLEM SET #7 Due (at 8 a.m.): Monday, Oct. 26, 2015, in the EE 140/240A HW box near 125 Cory. 1. A design error has resulted in a mismatch in the circuit of Fig. PS7-1.

More information

EE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling

EE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling EE 330 Lecture 20 Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling Review from Last Lecture Simplified Multi-Region Model Alternate equivalent model

More information

Analog Integrated Circuit Design Exercise 1

Analog Integrated Circuit Design Exercise 1 Analog Integrated Circuit Design Exercise 1 Integrated Electronic Systems Lab Prof. Dr.-Ing. Klaus Hofmann M.Sc. Katrin Hirmer, M.Sc. Sreekesh Lakshminarayanan Status: 21.10.2015 Pre-Assignments The lecture

More information

d. Why do circuit designers like to use feedback when they make amplifiers? Give at least two reasons.

d. Why do circuit designers like to use feedback when they make amplifiers? Give at least two reasons. EECS105 Final 5/12/10 Name SID 1 /20 2 /30 3 /20 4 /20 5 /30 6 /40 7 /20 8 /20 Total 1. Give a short answer to each question a. Your friend from Stanford says that he has designed a three-stage high gain

More information

Lab Project EE348L. Spring 2005

Lab Project EE348L. Spring 2005 Lab Project EE348L Spring 2005 B. Madhavan Spring 2005 B. Madhavan Page 1 of 7 EE348L, Spring 2005 1 Lab Project 1.1 Introduction Based on your understanding of band pass filters and single transistor

More information

Electronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd

Electronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd Electronic Devices Ninth Edition Floyd Chapter 9 The Common-Source Amplifier In a CS amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The amplifier has

More information

V o. ECE2280 Homework #1 Fall Use: ignore r o, V BE =0.7, β=100 V I = sin(20t) For DC analysis, assume that the capacitors are open

V o. ECE2280 Homework #1 Fall Use: ignore r o, V BE =0.7, β=100 V I = sin(20t) For DC analysis, assume that the capacitors are open ECE2280 Homework #1 Fall 2011 1. Use: ignore r o, V BE =0.7, β=100 V I = 200.001sin(20t) For DC analysis, assume that the capacitors are open (a) Solve for the DC currents: a. I B b. I E c. I C (b) Solve

More information

Operational Amplifiers

Operational Amplifiers CHAPTER 9 Operational Amplifiers Analog IC Analysis and Design 9- Chih-Cheng Hsieh Outline. General Consideration. One-Stage Op Amps / Two-Stage Op Amps 3. Gain Boosting 4. Common-Mode Feedback 5. Input

More information

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide

More information

EE105 Fall 2015 Microelectronic Devices and Circuits

EE105 Fall 2015 Microelectronic Devices and Circuits EE105 Fall 2015 Microelectronic Devices and Circuits Multi-Stage Amplifiers Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of MOS Amplifiers Common

More information

Lecture 3 Switched-Capacitor Circuits Trevor Caldwell

Lecture 3 Switched-Capacitor Circuits Trevor Caldwell Advanced Analog Circuits Lecture 3 Switched-Capacitor Circuits Trevor Caldwell trevor.caldwell@analog.com Lecture Plan Date Lecture (Wednesday 2-4pm) Reference Homework 2017-01-11 1 MOD1 & MOD2 ST 2, 3,

More information

ECEN 5008: Analog IC Design. Final Exam

ECEN 5008: Analog IC Design. Final Exam ECEN 5008 Initials: 1/10 ECEN 5008: Analog IC Design Final Exam Spring 2004 Instructions: 1. Exam Policy: Time-limited, 150-minute exam. When the time is called, all work must stop. Put your initials on

More information

Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors

Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors 1 Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors Current Mirror Example 2 Two Stage Op Amp (MOSFET) Current Mirror Example Three Stage 741 Opamp (BJT) 3 4

More information

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT) Course Outline 1. Chapter 1: Signals and Amplifiers 1 2. Chapter 3: Semiconductors 3. Chapter 4: Diodes 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

More information

LECTURE 19 DIFFERENTIAL AMPLIFIER

LECTURE 19 DIFFERENTIAL AMPLIFIER Lecture 19 Differential Amplifier (6/4/14) Page 191 LECTURE 19 DIFFERENTIAL AMPLIFIER LECTURE ORGANIZATION Outline Characterization of a differential amplifier Differential amplifier with a current mirror

More information

MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science Microelectronic Devices and Circuits Fall 2009

MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science Microelectronic Devices and Circuits Fall 2009 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6.012 Microelectronic Devices and Circuits Fall 2009 SPECIAL PROBLEM ON CIRCUIT DESIGN 12/1/09 edition

More information

Single-Stage MOSFET Amplifiers

Single-Stage MOSFET Amplifiers ECE 25 8. SingleStage MOSFET Amplifiers Lab 8 SingleStage MOSFET Amplifiers n this lab we will investigate the gain properties of a sourcefollower and a commonsource amplifier. 8.A. PreLab Calculations

More information

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away

More information

Lecture 040 CE and CS Output Stages (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

Lecture 040 CE and CS Output Stages (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen Lecture 040 CE and CS Output Stages (1/11/04) Page 0401 LECTURE 040 COMMON SOURCE AND EMITTER OUTPUT STAGES (READING: GHLM 8498, AH 181) Objective The objective of this presentation is: Show how to design

More information

6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers

6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers 6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers Michael Perrott Massachusetts Institute of Technology Copyright 2003 by Michael H. Perrott Broadband Communication

More information

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-3 MOSFET UNDER

More information

Chapter 8 Differential and Multistage Amplifiers

Chapter 8 Differential and Multistage Amplifiers 1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.

More information

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) Revised 2/16/2007 ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) *NOTE: The text mentioned below refers to the Sedra/Smith, 5th edition.

More information

6.002 Circuits and Electronics Final Exam Practice Set 1

6.002 Circuits and Electronics Final Exam Practice Set 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE 6.002 Circuits and Electronics Set 1 Problem 1 Figure 1 shows a simplified small-signal model of a certain

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier Chapter 5 Operational Amplifiers and Source Followers 5.1 Operational Amplifier In single ended operation the output is measured with respect to a fixed potential, usually ground, whereas in double-ended

More information

UNIT I - TRANSISTOR BIAS STABILITY

UNIT I - TRANSISTOR BIAS STABILITY UNIT I - TRANSISTOR BIAS STABILITY OBJECTIVE On the completion of this unit the student will understand NEED OF BIASING CONCEPTS OF LOAD LINE Q-POINT AND ITS STABILIZATION AND COMPENSATION DIFFERENT TYPES

More information

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background

More information

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data

More information

Electronic Devices and Circuits Lecture 20 - Linear Amp. Analysis and Design I - Outline Announcements. )/2 [v IN1.

Electronic Devices and Circuits Lecture 20 - Linear Amp. Analysis and Design I - Outline Announcements. )/2 [v IN1. 6.012 Electronic Devices and Circuits Lecture 20 Linear Amp. Analysis and Design I Outline Announcements Handouts Lecture Outline and Summary Announcements Design Problem due in under two weeks Review

More information

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation

More information

Design and Simulation of Low Voltage Operational Amplifier

Design and Simulation of Low Voltage Operational Amplifier Design and Simulation of Low Voltage Operational Amplifier Zach Nelson Department of Electrical Engineering, University of Nevada, Las Vegas 4505 S Maryland Pkwy, Las Vegas, NV 89154 United States of America

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE. Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE. Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering Experiment No. 9 - MOSFET Amplifier Configurations Overview: The purpose of this experiment is to familiarize

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND

More information

A low voltage rail-to-rail operational amplifier with constant operation and improved process robustness

A low voltage rail-to-rail operational amplifier with constant operation and improved process robustness Graduate Theses and Dissertations Graduate College 2009 A low voltage rail-to-rail operational amplifier with constant operation and improved process robustness Rien Lerone Beal Iowa State University Follow

More information

Single-Stage MOSFET Amplifiers

Single-Stage MOSFET Amplifiers ECE 25 IX SingleStage MOSF ET A mplifiers Lab IX SingleStage MOSFET Amplifiers In this lab we will investigate the gain properties of a sourcefollower and a commonsource amplifier. IX.1 PreLab Calculations

More information

ECE 546 Lecture 12 Integrated Circuits

ECE 546 Lecture 12 Integrated Circuits ECE 546 Lecture 12 Integrated Circuits Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine 1 Integrated Circuits IC Requirements

More information

ECEN 474/704 Lab 6: Differential Pairs

ECEN 474/704 Lab 6: Differential Pairs ECEN 474/704 Lab 6: Differential Pairs Objective Design, simulate and layout various differential pairs used in different types of differential amplifiers such as operational transconductance amplifiers

More information

DC Coupling: General Trends

DC Coupling: General Trends DC Coupling: General Trends * Goal: want both input and output to be centered at halfway between the positive and negative supplies (or ground, for a single supply) -- in order to have maximum possible

More information

I C I E =I B = I C 1 V BE 0.7 V

I C I E =I B = I C 1 V BE 0.7 V Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics

More information

MOS Field Effect Transistors

MOS Field Effect Transistors MOS Field Effect Transistors A gate contact gate interconnect n polysilicon gate source contacts W active area (thin oxide area) polysilicon gate contact metal interconnect drain contacts A bulk contact

More information

EE 435. Lecture 6: Current Mirrors Signal Swing

EE 435. Lecture 6: Current Mirrors Signal Swing EE 435 ecture 6: Current Mirrors Signal Swing 1 Review from last lecture: Where we are at: Basic Op Amp Design Fundamental Amplifier Design Issues Single-Stage ow Gain Op Amps Single-Stage High Gain Op

More information

Chapter 10 Differential Amplifiers

Chapter 10 Differential Amplifiers Chapter 10 Differential Amplifiers 10.1 General Considerations 10.2 Bipolar Differential Pair 10.3 MOS Differential Pair 10.4 Cascode Differential Amplifiers 10.5 Common-Mode Rejection 10.6 Differential

More information

Fundamentos de Electrónica Lab Guide

Fundamentos de Electrónica Lab Guide Fundamentos de Electrónica Lab Guide Field Effect Transistor MOS-FET IST-2016/2017 2 nd Semester I-Introduction These are the objectives: a. n-type MOSFET characterization from the I(U) characteristics.

More information