12/01/2009. Practice with past exams
|
|
- Gervais Haynes
- 5 years ago
- Views:
Transcription
1 EE40 Final Exam Review Prof. Nathan Cheung 12/01/2009 Practice with past exams Slide 1
2 Overview of Course Circuit components: R, C, L, sources I-V characteristics energy storage/dissipation Circuit analysis: Laws: Ohm s, KVL, KCL Equivalent circuits (series/ parallel, Thevenin, Norton) Superposition for linear circuits Nodal analysis Mesh analysis Phasor I and V First-order transient excitation/analysis: Second Order RLC circuits Bode Plots Slide 2 Prof. 2 Cheung
3 Overview of Course Logic gates; Combinatorial logic (sum-of-products, Karnaugh maps), sequential logic etc. Semiconductors evices pn-diodes (many types) FETs (n-channel,,p p-channel, CMOS) Useful iode and FET circuits: Amplifiers: op-amp (negative feedback), rectifiers; wave shaping circuits Slide 3 Prof. 3 Cheung
4 iode Circuit Analysis by Assumed iode States 1) Specify Ideal iode Model or Piecewise-Linear iode Model I (A) I (A) reverse bias forward bias V (V) reverse bias forward bias V on 2) Each diode can be ON or OFF 3) Circuit containing n diodes will have 2 n states 4) The combination of states that works for ALL diodes d (consistent t with KVL and KCL) will be the solution Slide 4
5 Example Problem: Perfect Rectifier Model Sketch V out versus V in Suggested problem: What if there is a 0.6V drop when diodes are on? Slide 5
6 iode with Capacitor Circuit (e.g.level Shifter) -V C V IN V C V IN - C V OUT - V OUT 1 3 t V IN (min) V OUT (t)= V C (t) V IN (t) Finds out what happens to V C when V IN changes 1) iode =open, V C (t)=0, V OUT (t)= V IN (t) 2) iode =short, V C (t)= -V IN (t), V OUT (t)=0, 3) iode =open, V C (t)= -V IN (min), V OUT (t)= V IN (t)-v IN (min) 2 t Slide 6
7 Example: iode with RL Circuit Sketch i(t) Answer Note: i(t) is continuous τ = L/R = msec Slide 7
8 Load-Line Analysis We have a circuit containing a two-terminal non-linear element NLE, and some linear components. First replace the entire linear part of the circuit by its Thevenin equivalent. Then define I and V at the NLE terminals (typically associated signs) Nonlinear 250K 1M N 200K 9µA L V S element - 1V S - - 2V E S I Slide 8
9 Example of Load-Line Analysis (con t) Given the graphical properties of two terminal non-linear circuit (i.e. the graph of a two terminal device) And have this connected to a linear (Thévenin) circuit Whose I-V can also be graphed on the same axes ( load line ) N L E N L E S - V S I 200K - 2V Application of KCL, KVL gives circuit solution I (µa) I K L The solution S - 2V! Slide 9 V S (V) 1 2
10 Example : Voltage controlled Attenuator V C and R C etermines r d at Q point of diode Slide 10
11 Example : Voltage Controlled Attenuator The large capacitors and C bias source are effective shorts for the ac signal in small-signal circuits Slide 11
12 Three-Terminal Parametric Graphs G V GS - 3-Terminal evice S I 10 I (µa) V GS = 3 V GS = 2 V GS = 1 Concept of 3-Terminal Parametric Graphs: We set a voltage (or current) at one set of terminals (here we will apply a fixed V GS, IG=0) and conceptually draw a box around the device with only two terminals emerging so we can again plot the two-terminal characteristic (here I versus V S ). 1 2 V S (V) But we can do this for a variety of values of V GS with the result that we get a family of curves. Slide 12 Prof. 12Cheung
13 Graphical Solutions for 3-Terminal evices V I G - - S 200K 2V We can only find a solution for one input (V GS ) at a time: First select V GS (e.g. 2V) and draw I vs V S for the 3-Terminal device. Now draw I vs V S for the 2V - 200KΩ Thevenin source. The only point on the I vs V plane which obeys KCL and KVL is I = 5µAat V S = 1V. Slide I I (µa) V GS = 3 V GS = 2 V GS = 1 (µa) ) V S (V) 1 2 The solution! V S (V)
14 SOLVING MOSFET CIRCUITS: STEPS 1) Guess the mode of operation for the transistor. (We will learn how to make educated guesses). 2) Write the I vs. V S equation for this guess mode of operation. 3) Use KVL, KCL, etc. to come up with an equation relating I and V S based on the surrounding linear circuit. 4) Solve these equations for I and V S. 5) Check to see if the values for I and V S are possible for the mode you guessed for the transistor. If the values are possible for the mode guessed, stop, problem solved. If the values are impossible, go back to Step 1. Slide 14
15 CHECKING THE ANSWERS NMOS Cut-off Saturation Triode 1) V GS > V T(N) in triode or saturation V GS V T(N) in cutoff 0 V to v S V to v GS 2) V S < V GS V T(N) in triode V S V GS V T(N) in saturation S GS T(N) PMOS Triode v 1) V GS <V T(P) in triode or saturation V GS V T(P) in cutoff 2) V S >V GS V T(P) in triode V S V GS V T(P) in saturation Saturation Cut-off ) S GS T(P) V 0 V S to to v GS Slide 15
16 Example Problem : MOSFET Circuit Slide 16
17 Example Problem : MOSFET Circuit Find V GS such that V S =2V Answer Guess Saturation Mode Check: V S (=2V) > V GS -V T (= =1V) 5=1V) MOSFET indeed is in saturation mode Slide 17
18 Example Problem : MOSFET Circuit Find small-signal model parameters =10-5 Siemens Slide 18
19 How do you guess the right mode? Often, the key is the value of V GS. (We can often find V GS directly without solving the whole circuit.) I V GS V T(N) definitely cutoff I V GS =V T(N) ε probably bbl saturation V S V GS -V T(N) = ε V S Slide 19
20 How do you guess the right mode? When V GS >> V TH(N), it s harder to guess the mode. I ti triode mode saturation ti mode I V GS -V TH(N) If I is small, probably triode mode Slide 20 V S
21 EXAMPLE 4 V 3 V 1.5 kω GIVEN: V TH(N) = 1 V, K= 250 µ A/V 2, λ = 0 V -1. I G V S S 1) Since V GS > V TH(N), not in cutoff mode. Guess saturation mode. 2) Write transistor I vs. V S : I = = I 1mA sat = ( 3 V 1 V ) 3) Write I vs. V S equation using KVL: - V S kΩ Ω I 4 V = 0 2 Slide 21
22 EXAMPLE 1.5 kω 4) Solve V S : I = 1mA V S = 2.5 V 4 V 3 V I G V S S 5) Check: I and V S are correct sign, and V S V GS -V T(N) as required din saturation mode. GIVEN: V TH(N) = 1 V, ½W/Lµ µ = 2 n C OX 250 µ A/V, λ = 0 V -1. Slide 22
23 WHAT IF WE GUESSE THE MOE WRONG? 1.5 kω 1) Since V GS > V TH(N), not in cutoff mode. Guess triode mode. 2) Write transistor I vs. V S : 4 V 3V G GIVEN: V TH(N) = 1 V, K= 250 µ A/V 2, λ = 0 V -1. I V S S I = (3 1 V S /2)V S 3) Write I vs. V S equation using KVL: - Slide 23 V S -1.5 kω I 4 V = 0
24 WHAT IF WE GUESSE THE MOE WRONG? 1.5 kω 4) Solve for V S with quadratic equation by combining 2) and 3): G 4 V 5) Check: 3 V I V S S V S = {4 V, 2.67 V} V S > V GS V T(N) = 2V Neither value valid in triode mode! Guess is incorrect. GIVEN: V TH(N) = 1 V, K= 250 µ A/V 2, λ = 0 V -1. Slide 24
25 Another Perspective In this circuit, the transistor delivered a constant current I SAT to the 1.5 kω resistor. 1.5 kω This circuit acts like a constant current source, as long as the transistor remains in saturation mode. I SAT does not depend on the attached resistance if saturation ti is maintained. 4 V 3V G I V S S I SAT 1.5 kω Slide 25
26 Another Perspective I SAT does depend on V GS ; one can adjust the current supplied by adjusting V GS. R L The circuit will go out of saturation mode if V GS <V T(N) or V S < V GS V T(N) This can happen if V GS is too large or too small, or if the load resistance is too large. V V GS G I V S S I SAT R L Slide 26
27 2kΩ 1.5 kω ANOTHER EXAMPLE I 1) What is V GS? No current goes into/out gate. V GS = 3 V by voltage division. Guess saturation (randomly). G 4V 2) Write transistor I vs. V S : 6kΩ GIVEN: V TH(N) = 1 V, K= 250 µ A/V 2, λ =0V -1. V S S I = I = 1mA sat = ( 3 V 1 V) 3) Write I vs. V S equation using KVL: - V S -1.5 kω I 4 V = V S =2.75V consisitent with saturation mode Effectively the same circuit as previous example: only 1 voltage source in this case 0 2 Slide 27
28 The CMOS Inverter: Current Flow V OUT N: sat P: sat i V V N: off P: Triode C V IN G I S V OUT N: sat P: Triode A B E G S N: Triode P: sat 0 0 N: Triode P: off V V IN Slide 28
29 Another CMOS Example: The LATCH CLK V CLK V ata (V IN ) is written to the internal node (V OUTINT ) when the clock is low. V OUT remains frozen. OUT V IN CLK V OUTINT CLK V OUT When the clock is high. The (inverted) internal node voltage is written to V OUT. The internal node V OUTINT remains frozen Slide 29
30 THE LATCH V V When CLK is low the lefthand transistors conduct. The CLK CLK right-hand transistors are open. 0 V V V OUT INT is charged to V IN. OUTINT g IN V IN V OUTINT V OUT V OUT remains the same; there is no charging path. CLK V CLK 0V Slide 30
31 THE LATCH V V When CLK is high, the right-hand transistors CLK CLK conduct. V the left-hand transistors are 0 V open. V IN V OUTINT V OUT V OUT is changed to V OUT INT. CLK CLK V V OUTINT remains the same; 0V there is no charging path. Slide 31
32 CONCEPT OF STATE V V A latch stores a 1 or 0. V IN CLK CLK CLK Next State CLK Current State The stored value is known as the state. This is one of the basic elements needed to make a state machine (covered in EE 20 and CS 61C). Slide 32
33 LATCH AS GATEKEEPER A signal may have to go through a complex system of gates, with paths of different delays: possibility of false output! Combinatorial Logic Signal propagates all the way through Includes our logic gates: NAN, NOT, etc. Slide 33 Sequential Element Prevents changes in output until signaled
34 Amplifier Efficiency Power Supply A Source Amplifier Power Supply B Amplifier Efficiency η = 8/22.5 =36% Slide 34 Source P i = (10-3 V) 2 /10 5 Ω =10-11 W Load P 0 = (8V) 2 /8Ω =8 W Power Supplies P s = 15W7.5W =225W 22.5 Amplifier P -11 d = 22.5W10 W-8W = 14.5 W Load
35 ifferential Signal and Common Mode Signal Redefine the inputs in terms of two other voltages: 1. differential mode input v id v i1 v i2 2. common mode input v icm (v i1 v i2 )/2 so that v i1 = v icm (v id /2) and v i2 = v icm - (v id /2) v o = A d v id Acm v icm differential mode gain common mode gain Slide 35
36 Common Mode Rejection Ratio Example CMRR (in db) = 20log A d A cm ifferential signal from sensor = 1mV (peak). We want outputs signal > 1V implies A d > 1000 Common mode signal =100V (from power line). We want common mode signal < 0.1V implies A cm <10-4 Therefore CMRR needs to be > 20log(10 7 )= 140dB Slide 36
37 Offset Voltage, Offset Current, and Bias Current Given V off =2mV I B = 100nA I off = 20nA A cm =1 A d =100 Both input terminals to ground through 100kΩ resistors Use superposition Vo = A d (V voff V Ioff ) A cm v icm = 100( )1(0.01)=0.3343V Slide 37
Homework Assignment 07
Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.
More informationHomework Assignment 07
Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.
More informationExam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?
Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance
More informationWeek 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model
Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section
More information55:041 Electronic Circuits
55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationDigital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.
Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition
More information55:041 Electronic Circuits
55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More information11/17/2009 Reading Chapter 11 of Hambley Chapter 14.8 of Hambley
EE40 Lec 21 Amplifiers Prof. Nathan Cheung 11/17/2009 eading Chapter 11 of Hambley Chapter 14.8 of Hambley Slide 1 OUTLINE Amplifier Models with dependent sources Efficiency Input and Output Impedance
More informationChapter 8. Chapter 9. Chapter 6. Chapter 10. Chapter 11. Chapter 7
5.5 Series and Parallel Combinations of 246 Complex Impedances 5.6 Steady-State AC Node-Voltage 247 Analysis 5.7 AC Power Calculations 256 5.8 Using Power Triangles 258 5.9 Power-Factor Correction 261
More informationHomework Assignment True or false. For both the inverting and noninverting op-amp configurations, V OS results in
Question 1 (Short Takes), 2 points each. Homework Assignment 02 1. An op-amp has input bias current I B = 1 μa. Make an estimate for the input offset current I OS. Answer. I OS is normally an order of
More informationHomework Assignment 04
Question 1 (Short Takes) Homework Assignment 04 1. Consider the single-supply op-amp amplifier shown. What is the purpose of R 3? (1 point) Answer: This compensates for the op-amp s input bias current.
More informationES250: Electrical Science. HW6: The Operational Amplifier
ES250: Electrical Science HW6: The Operational Amplifier Introduction This chapter introduces the operational amplifier or op amp We will learn how to analyze and design circuits that contain op amps,
More informationSAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
More informationLecture 34: Designing amplifiers, biasing, frequency response. Context
Lecture 34: Designing amplifiers, biasing, frequency response Prof J. S. Smith Context We will figure out more of the design parameters for the amplifier we looked at in the last lecture, and then we will
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationHomework Assignment 02
Question 1 (2 points each unless noted otherwise) 1. Is the following circuit an STC circuit? Homework Assignment 02 (a) Yes (b) No (c) Need additional information Answer: There is one reactive element
More informationChapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier
Chapter 5 Operational Amplifiers and Source Followers 5.1 Operational Amplifier In single ended operation the output is measured with respect to a fixed potential, usually ground, whereas in double-ended
More informationPreliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B
Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied
More informationAnalog Integrated Circuit Design Exercise 1
Analog Integrated Circuit Design Exercise 1 Integrated Electronic Systems Lab Prof. Dr.-Ing. Klaus Hofmann M.Sc. Katrin Hirmer, M.Sc. Sreekesh Lakshminarayanan Status: 21.10.2015 Pre-Assignments The lecture
More informationEECE2412 Final Exam. with Solutions
EECE2412 Final Exam with Solutions Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University Fall Semester 2010 My file 11480/exams/final General Instructions:
More informationECE-342 Test 1: Sep 27, :00-8:00, Closed Book. Name : SOLUTION
ECE-342 Test 1: Sep 27, 2011 6:00-8:00, Closed Book Name : SOLUTION All solutions must provide units as appropriate. Use the physical constants and data as provided on the formula sheet the last page of
More informationEE 140 / EE 240A ANALOG INTEGRATED CIRCUITS FALL 2015 C. Nguyen PROBLEM SET #7
Issued: Friday, Oct. 16, 2015 PROBLEM SET #7 Due (at 8 a.m.): Monday, Oct. 26, 2015, in the EE 140/240A HW box near 125 Cory. 1. A design error has resulted in a mismatch in the circuit of Fig. PS7-1.
More informationECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers
ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background
More information55:041 Electronic Circuits The University of Iowa Fall Exam 1 Solution
Exam 1 Name: Score /60 Question 1 Short takes. For True/False questions, write T, or F in the right-hand column as appropriate. For other questions, provide answers in the space provided. 1. Tue of false:
More informationHomework Assignment 01
Homework Assignment 01 In this homework set students review some basic circuit analysis techniques, as well as review how to analyze ideal op-amp circuits. Numerical answers must be supplied using engineering
More informationHomework Assignment 03
Homework Assignment 03 Question 1 (Short Takes), 2 points each unless otherwise noted. 1. Two 0.68 μf capacitors are connected in series across a 10 khz sine wave signal source. The total capacitive reactance
More informationIntroduction to Operational Amplifiers
P. R. Nelson ECE 322 Fall 2012 p. 1/50 Introduction to Operational Amplifiers Phyllis R. Nelson prnelson@csupomona.edu Professor, Department of Electrical and Computer Engineering California State Polytechnic
More informationElectronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd
Electronic Devices Ninth Edition Floyd Chapter 9 The Common-Source Amplifier In a CS amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The amplifier has
More informationApplied Electronics II
Applied Electronics II Chapter 3: Operational Amplifier Part 1- Op Amp Basics School of Electrical and Computer Engineering Addis Ababa Institute of Technology Addis Ababa University Daniel D./Getachew
More informationECE 3110: Engineering Electronics II Fall Final Exam. Dec. 16, 8:00-10:00am. Name: (78 points total)
Final Exam Dec. 16, 8:00-10:00am Name: (78 points total) Problem 1: Consider the emitter follower in Fig. 7, which is being used as an output stage. For Q 1, assume β = and initally assume that V BE =
More informationDesign and Simulation of Low Voltage Operational Amplifier
Design and Simulation of Low Voltage Operational Amplifier Zach Nelson Department of Electrical Engineering, University of Nevada, Las Vegas 4505 S Maryland Pkwy, Las Vegas, NV 89154 United States of America
More informationAn electronic unit that behaves like a voltagecontrolled
1 An electronic unit that behaves like a voltagecontrolled voltage source. An active circuit element that amplifies, sums, subtracts, multiply, divide, differentiate or integrates a signal 2 A typical
More informationECE 546 Lecture 12 Integrated Circuits
ECE 546 Lecture 12 Integrated Circuits Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine 1 Integrated Circuits IC Requirements
More informationApplied Electronics II
Applied Electronics II Chapter 2: Differential Amplifier School of Electrical and Computer Engineering Addis Ababa Institute of Technology Addis Ababa University Daniel D./Abel G. April 4, 2016 Chapter
More informationRoll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)
F:/Academic/22 Refer/WI/ACAD/10 SHRI RAMSWAROOP MEMORIAL COLLEGE OF ENGG. & MANAGEMENT (Following Paper-ID and Roll No. to be filled by the student in the Answer Book) PAPER ID: 3301 Roll No. B.Tech. SEM
More informationCommon-Source Amplifiers
Lab 2: Common-Source Amplifiers Introduction The common-source stage is the most basic amplifier stage encountered in CMOS analog circuits. Because of its very high input impedance, moderate-to-high gain,
More informationEE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling
EE 330 Lecture 20 Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling Review from Last Lecture Simplified Multi-Region Model Alternate equivalent model
More informationF9 Differential and Multistage Amplifiers
Lars Ohlsson 018-10-0 F9 Differential and Multistage Amplifiers Outline MOS differential pair Common mode signal operation Differential mode signal operation Large signal operation Small signal operation
More informationD n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN
Name: EXAM #3 Closed book, closed notes. Calculators may be used for numeric computations only. All work is to be your own - show your work for maximum partial credit. Data: Use the following data in all
More informationMICROELECTRONIC CIRCUIT DESIGN Third Edition
MICROELECTRONIC CIRCUIT DESIGN Third Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 1/25/08 Chapter 1 1.3 1.52 years, 5.06 years 1.5 1.95 years, 6.46 years 1.8 113
More informationCourse Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)
Course Outline 1. Chapter 1: Signals and Amplifiers 1 2. Chapter 3: Semiconductors 3. Chapter 4: Diodes 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)
More informationENGR 201 Homework, Fall 2018
Chapter 1 Voltage, Current, Circuit Laws (Selected contents from Chapter 1-3 in the text book) 1. What are the following instruments? Draw lines to match them to their cables: Fig. 1-1 2. Complete the
More informationMicroelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types
More informationThe Differential Amplifier. BJT Differential Pair
1 The Differential Amplifier Asst. Prof. MONTREE SRPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s nstitute of Technology North Bangkok
More informationLecture # 4 Network Analysis
CPEN 206 Linear Circuits Lecture # 4 Network Analysis Dr. Godfrey A. Mills Email: gmills@ug.edu.gh Phone: 026-907-3163 February 22, 2016 Course TA David S. Tamakloe 1 What is Network Technique o Network
More informationExperiment 5 Single-Stage MOS Amplifiers
Experiment 5 Single-Stage MOS Amplifiers B. Cagdaser, H. Chong, R. Lu, and R. T. Howe UC Berkeley EE 105 Fall 2005 1 Objective This is the first lab dealing with the use of transistors in amplifiers. We
More informationPaper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
More informationDifferential Amplifier : input. resistance. Differential amplifiers are widely used in engineering instrumentation
Differential Amplifier : input resistance Differential amplifiers are widely used in engineering instrumentation Differential Amplifier : input resistance v 2 v 1 ir 1 ir 1 2iR 1 R in v 2 i v 1 2R 1 Differential
More informationLinear IC s and applications
Questions and Solutions PART-A Unit-1 INTRODUCTION TO OP-AMPS 1. Explain data acquisition system Jan13 DATA ACQUISITION SYSYTEM BLOCK DIAGRAM: Input stage Intermediate stage Level shifting stage Output
More informationQuestion. 1 (2 points. (a) (b) 10 khz (c) (d) 10.4 khz. (a) (b) khz (c) (d) 100 khz. 3. The. (a) (c) Fall What is the 3-dB. 1 nf?
Homework Assignment 02 Question 1 (2 points each unless noted otherwise) 1. What is the 3-dB bandwidth of the amplifier shown below if 2.5K, 100K, 40 ms, and 1 nf? (a) 65.25 khz (b) 10 khz (c) 1.59 khz
More informationEE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
More information6. The Operational Amplifier
1 6. The Operational Amplifier This chapter introduces a new component which, although technically nonlinear, can be treated effectively with linear models This element known as the operational amplifier
More informationLecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More informationChapter 8 Differential and Multistage Amplifiers
1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.
More informationSolid State Devices & Circuits. 18. Advanced Techniques
ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular
More informationIntroduction to Op Amps
Introduction to Op Amps ENGI 242 ELEC 222 Basic Op-Amp The op-amp is a differential amplifier with a very high open loop gain 25k AVOL 500k (much higher for FET inputs) high input impedance 500kΩ ZIN 10MΩ
More informationElectronics EECE2412 Spring 2016 Exam #1
Electronics EECE2412 Spring 2016 Exam #1 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 18 February 2016 File:12140/exams/exam1 Name: : Row # : Seat
More informationMICROELECTRONIC CIRCUIT DESIGN Fifth Edition
MICROELECTRONIC CIRCUIT DESIGN Fifth Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 07/05/15 Chapter 1 1.5 1.52 years, 5.06 years 1.6 1.95 years, 6.52 years 1.9 402
More informationHomework Assignment 06
Question 1 (2 points each unless noted otherwise) Homework Assignment 06 1. True or false: when transforming a circuit s diagram to a diagram of its small-signal model, we replace dc constant current sources
More informationMicroelectronics Circuit Analysis and Design
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation
More informationECE321 Electronics I
ECE321 Electronics Lecture 2: Basic Circuits with Diodes Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: pzarkesh.unm.edu Slide: 1 Review of Last Lecture
More informationMOSFET Amplifier Design
MOSFET Amplifier Design Introduction In this lab, you will design a basic 2-stage amplifier using the same 4007 chip as in lab 2. As a reminder, the PSpice model parameters are: NMOS: LEVEL=1, VTO=1.4,
More informationEE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits
EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits Objective This experiment is designed for students to get familiar with the basic properties
More informationElectronics Lab. (EE21338)
Princess Sumaya University for Technology The King Abdullah II School for Engineering Electrical Engineering Department Electronics Lab. (EE21338) Prepared By: Eng. Eyad Al-Kouz October, 2012 Table of
More informationMetal-Oxide-Silicon (MOS) devices PMOS. n-type
Metal-Oxide-Silicon (MOS devices Principle of MOS Field Effect Transistor transistor operation Metal (poly gate on oxide between source and drain Source and drain implants of opposite type to substrate.
More informationEE 3305 Lab I Revised July 18, 2003
Operational Amplifiers Operational amplifiers are high-gain amplifiers with a similar general description typified by the most famous example, the LM741. The LM741 is used for many amplifier varieties
More informationLecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III
Lecture 3 Biasing and Loading Single Stage FET Amplifiers The Building Blocks of Analog Circuits III In this lecture you will learn: Current biasing of circuits Current sources and sinks for CS, CG, and
More informationChapter #3: Diodes. from Microelectronic Circuits Text by Sedra and Smith Oxford Publishing
Chapter #3: Diodes from Microelectronic Circuits Text by Sedra and Smith Oxford Publishing Introduction IN THIS CHAPTER WE WILL LEARN the characteristics of the ideal diode and how to analyze and design
More information4. Differential Amplifiers. Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory
4. Differential Amplifiers Electronic Circuits Prof. Dr. Qiuting Huang Integrated Systems Laboratory Differential Signaling Basics and Motivation Transmitting information with two complementary signals
More information1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier. (2 points)
Exam 1 Name: Score /60 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier.
More informationLow Distortion Design 4
Low Distortion Design 4 TIPL 1324 TI Precision Labs Op Amps Presented by Collin Wells Prepared by John Caldwell Prerequisites: Noise 1 3 (TIPL1311 TIPL1313) Distortion from Power Supplies Power supplies
More informationECE321 Electronics I
ECE32 Electronics Lecture 2: Basic Circuits with iodes Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: Review of Last Lecture
More informationEE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND
More informationAbout the Tutorial. Audience. Prerequisites. Copyright & Disclaimer. Linear Integrated Circuits Applications
About the Tutorial Linear Integrated Circuits are solid state analog devices that can operate over a continuous range of input signals. Theoretically, they are characterized by an infinite number of operating
More informationLecture 20 Transistor Amplifiers (II) Other Amplifier Stages
Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Outline Common drain amplifier Common gate amplifier Reading Assignment: Howe and Sodini; Chapter 8, Sections 8.78.9 6.02 Spring 2009 . Common
More informationFET Channel. - simplified representation of three terminal device called a field effect transistor (FET)
FET Channel - simplified representation of three terminal device called a field effect transistor (FET) - overall horizontal shape - current levels off as voltage increases - two regions of operation 1.
More informationChapter 11. Differential Amplifier Circuits
Chapter 11 Differential Amplifier Circuits 11.0 ntroduction Differential amplifier or diff-amp is a multi-transistor amplifier. t is the fundamental building block of analog circuit. t is virtually formed
More informationIntroduction to Analog Interfacing. ECE/CS 5780/6780: Embedded System Design. Various Op Amps. Ideal Op Amps
Introduction to Analog Interfacing ECE/CS 5780/6780: Embedded System Design Scott R. Little Lecture 19: Operational Amplifiers Most embedded systems include components that measure and/or control real-world
More informationFundamentos de Electrónica Lab Guide
Fundamentos de Electrónica Lab Guide Field Effect Transistor MOS-FET IST-2016/2017 2 nd Semester I-Introduction These are the objectives: a. n-type MOSFET characterization from the I(U) characteristics.
More informationUNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationMOS Field Effect Transistors
MOS Field Effect Transistors A gate contact gate interconnect n polysilicon gate source contacts W active area (thin oxide area) polysilicon gate contact metal interconnect drain contacts A bulk contact
More informationOperational amplifiers
Operational amplifiers Bởi: Sy Hien Dinh INTRODUCTION Having learned the basic laws and theorems for circuit analysis, we are now ready to study an active circuit element of paramount importance: the operational
More informationECEN 474/704 Lab 6: Differential Pairs
ECEN 474/704 Lab 6: Differential Pairs Objective Design, simulate and layout various differential pairs used in different types of differential amplifiers such as operational transconductance amplifiers
More informationECE315 / ECE515 Lecture 7 Date:
Lecture 7 ate: 01.09.2016 CG Amplifier Examples Biasing in MOS Amplifier Circuits Common Gate (CG) Amplifier CG Amplifier- nput is applied at the Source and the output is sensed at the rain. The Gate terminal
More informationEE 331 Devices and Circuits I. Lecture 1 March 31, 2014
EE 331 Devices and Circuits I Lecture 1 March 31, 2014 Four Main Topics (Welcome to the Real World!) Physics of conduction in semiconductors (Chap 2) Solid state diodes physics, applications, and analysis
More informationLINEAR IC APPLICATIONS
1 B.Tech III Year I Semester (R09) Regular & Supplementary Examinations December/January 2013/14 1 (a) Why is R e in an emitter-coupled differential amplifier replaced by a constant current source? (b)
More informationECE3040 Assignment9. 1. The figures show inverting amplifier circuits.
ECE3040 Assignment9 1. The figures show inverting amplifier circuits. (a) For the circuit of Fig. (a), specify R 1, R F,andR O for a voltage gain of 50, an input resistance of 2kΩ, and an output resistance
More informationAdvanced Operational Amplifiers
IsLab Analog Integrated Circuit Design OPA2-47 Advanced Operational Amplifiers כ Kyungpook National University IsLab Analog Integrated Circuit Design OPA2-1 Advanced Current Mirrors and Opamps Two-stage
More informationL02 Operational Amplifiers Applications 1
L02 Operational Amplifiers Applications 1 Chapter 9 Ideal Operational Amplifiers and Op-Amp Circuits Donald A. Neamen (2009). Microelectronics: Circuit Analysis and Design, 4th Edition, Mc-Graw-Hill Prepared
More informationECEN 5008: Analog IC Design. Final Exam
ECEN 5008 Initials: 1/10 ECEN 5008: Analog IC Design Final Exam Spring 2004 Instructions: 1. Exam Policy: Time-limited, 150-minute exam. When the time is called, all work must stop. Put your initials on
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationHomework Assignment 06
Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,
More informationWeek 7: Common-Collector Amplifier, MOS Field Effect Transistor
EE 2110A Electronic Circuits Week 7: Common-Collector Amplifier, MOS Field Effect Transistor ecture 07-1 Topics to coer Common-Collector Amplifier MOS Field Effect Transistor Physical Operation and I-V
More informationChapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier
Chapter 15 Goals ac-coupled multistage amplifiers including voltage gain, input and output resistances, and small-signal limitations. dc-coupled multistage amplifiers. Darlington configuration and cascode
More informationEE 230 Lab Lab 9. Prior to Lab
MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter
More informationGechstudentszone.wordpress.com
UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits
More information6.002 Circuits and Electronics Final Exam Practice Set 1
MASSACHUSETTS INSTITUTE OF TECHNOLOGY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE 6.002 Circuits and Electronics Set 1 Problem 1 Figure 1 shows a simplified small-signal model of a certain
More informationDe Anza College Department of Engineering Engr 37-Intorduction to Circuit Analysis
De Anza College Department of Engineering Engr 37-Intorduction to Circuit Analysis Spring 2017 Lec: Mon to Thurs 8:15 am 9:20 am S48 Office Hours: Thursday7:15 am to 8:15 am S48 Manizheh Zand email: zandmanizheh@fhda.edu
More informationDiode as a Temperature Sensor
M.B. Patil, IIT Bombay 1 Diode as a Temperature Sensor Introduction A p-n junction obeys the Shockley equation, I D = I s e V a/v T 1 ) I s e Va/V T for V a V T, 1) where V a is the applied voltage, V
More information