Directional Growth of Ultra-long CsPbBr 3 Perovskite. Nanowires for High Performance Photodetectors

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1 Supporting information Directional Growth of Ultra-long CsPbBr 3 Perovskite Nanowires for High Performance Photodetectors Muhammad Shoaib, Xuehong Zhang, Xiaoxia Wang, Hong Zhou, Tao Xu, Xiao Wang, Xuelu Hu, Huawei Liu, Xiaopeng Fan, Weihao Zheng, Tiefeng Yang, Shuzhen Yang, Qinglin Zhang, Xiaoli Zhu, Litao Sun, Anlian Pan * Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronic Science, Hunan University, Changsha, Hunan , P. R. China SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing , P. R. China Experimental section Synthesis of In-plane Directional Nanowires. M-plane sapphires were annealed at 1400 C for 10 hours with ambient air protection. Prior to use, the substrates were sonicated for 10 min in acetone, 10 min in isopropyl alcohol (IPA), 10 min in distilled H 2 O, and blow-dried in N 2. CsPbBr 3 nanowires were synthesized based on the thermal evaporation of CsBr and PbBr 2. Firstly, a mixture of CsBr and PbBr 2 powders were placed at the center of a heating zone. Several pieces of annealed M-plane sapphire substrates were placed on the silica boat at the downstream. High-purity N 2 gas was introduced into the quartz tube with a constant flowing rate (60 sccm) to purge the O 2. Then the furnace was rapidly heated to 600 C and maintained at this temperature for 10 min, keeping the pressure inside the tube at 760 Torr. Semiconductor CsPbBr 3 products were deposited on the surface of the sapphire substrate at the deposition temperature 300~400 C. After the growth, a large number of directional nanowires on the sapphire surface were obtained. The comparison experiments were performed at the low pressure of 300 Torr with the other parameters same as the above experiment. Page S1

2 Structural Characterization. The SEM images of the samples were characterized by scanning electron microscopy (Zeiss Sigma HD-01-61). XRD patterns were recorded using a Rigaku diffractometer (D/MAX 2500). Further structural analyses were carried out by a transmission electron microscope (FEI Titan operated at 300 kv) after the fabrication of cross-sectional specimens using a dual-beam instrument (FEI Helios 600i). Optical Characterization. The optical properties were measured with the con-focal µ-pl system (WITec, alpha-300). 488 nm CW laser was used as the excitation source for PL. The emission images of the nanowires are taken by a CCD camera. TRPL measurements were performed with a streak camera (C10910, Hamamatsu) usi ng a laser pulses at 400 nm (repetition rate of 80 MHz, pulse width of 80 fs,12.5µj/cm 2 ) as the light source. The 400 nm output was generated by an 800 nm laser from a mo de-locked oscillator (Tsunnami 3941-X1BB, Spectra-Physics) after a BBO crystal. Th e laser beam was focused by an objective lens (50, Zeiss, 0.75NA) to the sample on a substrate while PL emissions were collected by the same objective lens. The TRPL decay profile can be fitted by a deconvolution monoexponential decay function with a IRF (Impulse Response Function) of 370 ps. Photodetector Fabrication and Characterization: The Au electrodes (50 nm) were deposited onto the nanowire using a metal shadow mask and a thermal evaporator. Optoelectronic properties were monitored with a Keithley semiconductor parameter analyzer (4200-SCS), oscilloscope, and lasers. Page S2

3 Figure S1. Higher magnification SEM image of the nanowires. Figure S2. SEM image of the nanowire and substrate. Page S3

4 Figure S3. SEM image of the perovskite nanowires obtained at low pressure, demonstrating the large diameter and small length. Figure S4. (a) SEM image of the large-sized microcrystals formed under low pressure of 300 Torr at the initial growth stage. (b) SEM image of the small-sized nanocrystals formed under high pressure of 760 Torr at the initial growth stage. Page S4

5 Figure S5. The wavelength dependent responsivity of the photodetector. Page S5

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