HAL621, HAL629 Hall Effect Sensor Family MICRONAS. Edition Feb. 3, DS MICRONAS

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1 MICRONAS HAL61, HAL69 Hall Effect Sensor Family Edition Feb., DS MICRONAS

2 Contents Page Section Title 1. Introduction 1.1. Features 1.. Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5. Functional Description 6. Specifications 6.1. Outline Dimensions 6.. Dimensions of Sensitive Area 6.. Positions of Sensitive Areas 7.4. Absolute Maximum Ratings 7.5. Recommended Operating Conditions 8.6. Electrical Characteristics 9.7. Magnetic Characteristics Overview 1 4. Type Descriptions HAL HAL Application Notes Ambient Temperature Start-up Behavior EMC Data Sheet History Micronas

3 Hall Effect Sensor Family in CMOS technology 1. Introduction The HAL 6x family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a filter, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in their magnetic characteristics. All sensors contain an enhanced internal signal processing for very high repeatability requirements of the output signal. These sensors are the optimal solution for CAM and crank sensor applications. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4. V to 4 V in the ambient temperature range from 4 C up to 15 C. All sensors are available in a SMD-package (SOT-89B) and in a leaded version (TO-9UA). 1.. Family Overview The types differ according to the magnetic flux density values for the switching points and the mode of switching. Type Switching Behavior Sensitivity 61 bipolar very high 1 69 unipolar medium 14 see Page Note: The HAL69 is the improved successor of the HAL 68 with the same magnetic characteristics. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side Features: switching offset compensation at typically 6 khz signal processing with chopper stabilized filter operates from 4. V to 4 V supply voltage operates with static magnetic fields and dynamic magnetic fields up to 15 khz overvoltage protection at all pins reverse-voltage protection at -pin magnetic characteristics are robust against mechanical stress effects short-circuit protected open-drain output by thermal shut down constant switching points over a wide supply voltage range ideal sensor for applications in extreme automotive and industrial environments EMC and ESD optimized design Micronas

4 1.. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A K E HAL61 61A 61K 61E HAL69 69A 69K 69E 1.6. Solderability all packages: according to IEC During soldering reflow processing and manual reworking, a component body temperature of 6 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 1 months, starting from the date code printed on the labels, even in environments as extreme as 4 C and 9% relative humidity Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature T J ). A: T J = 4 C to +17 C K: T J = 4 C to +14 C E: T J = 4 C to +1 C OUT GND Fig. 1 1: Pin configuration The relationship between ambient temperature (T A ) and junction temperature is explained in section 5.1. on page Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-9UA Type: 6x Example: HAL69UA-E Type: 69 Package: TO-9UA Temperature Range: T J = 4 C to +1 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: Ordering Codes for Hall Sensors. 4 Micronas

5 . Functional Description HAL6x The HAL 6x sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic flux perpendicular to the sensitive area is applied to the sensor, the Hall plate generates a Hall voltage proportional to this field. The total voltage which appears at the Hall plate is influenced by offset voltages (e. g. caused by mechanical stress). This offset voltage is compensated for by cyclic commutation of the connections for current flow and voltage measurement which makes the switching offset compensation technique possible. Therefore, an internal oscillator provides a clock. The output voltage of the switched Hall plate contains the Hall voltage as a DC or low frequency signal and the offset voltage as an AC signal at the chopper frequency. The following chopper stabilized low-pass filter supresses the offset voltage and the output signal is the offset compensated Hall voltage. The following comparator block compares this offset compensated Hall voltage with the defined switching points. The output transistor is switched on when the magnetic field becomes larger than the operating point. It remains in this state as long as the magnetic field does not fall below the release point. If the magnetic field falls below, the transistor is switched off until the magnetic field once again exceeds. The built-in hysteresis eliminates oscillation. 1 GND Hall Plate Switch Temperature Dependent Bias Hysteresis Control Fig. 1 : HAL6x block diagram B V O Reverse Voltage & Overvoltage Protection t delay LP Comparator Clock Short Circuit & Overvoltage Protection Output t OUT According to the principle of the circuit, there is a fixed delay time t delay of typical 5 s from crossing the magnetic thresholds to the switching of the output (see Fig. 1 ). Fig. 1 : Timing diagram t The temperature-dependent bias regulates the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. The output is short circuit protected by limiting high currents and by sensing overtemperature. Shunt protection devices clamp voltage peaks at the Output-pin and - pin together with external series resistors. Reverse current is limited at the -pin by an internal series resistor up to 15 V. No external reverse protection diode is needed at the -pin for reverse voltages ranging from V to 15 V. Micronas 5

6 . Specifications.1. Outline Dimensions 1.5 ± ±.1 sensitive area.15. x ± x y sensitive area. x1 x 4 ±..55 ±.1 y.5 ±.1 min..5 1 top view 1.15 ± ±..1±. 14. min branded side SPGS-4-A/1E.6 ±.4 SPGS7-7-A/E 45 (.54) branded side.8 Fig. : Plastic Small Outline Transistor Package (SOT-89B) Weight approximately.5 g Dimensions in mm Fig. 1: Plastic Transistor Single Outline Package (TO-9UA) Weight approximately.1 g Dimensions in mm Note: For all package diagrams, a mechanical tolerance of ±5 µm applies to all dimensions where no tolerance is explicitly given... Dimensions of Sensitive Area.1 mm x.1 mm.. Positions of Sensitive Areas SOT-89B TO-9UA x x 1 / <. mm y =.95 mm ±. mm y = 1. mm ±. mm 6 Micronas

7 .4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit Supply Voltage ) V V P Test Voltage for Supply 1 4 ) V I DD Reverse Supply Current 1 5 1) ma I DDZ Supply Current through Protection Device 1 ) ) ma V O Output Voltage. 8 1) V I O Continuous Output On Current 5 1) ma I Omax Peak Output On Current 5 ) ma I OZ Output Current through Protection Device ) ) ma T S Storage Temperature Range C T J Junction Temperature Range C 17 4) 1) as long as T J max is not exceeded ) with a Ω series resistance at pin 1 (see Fig. 4 9) ) t< ms 4) t<1h Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability..5. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit Supply Voltage V I O Continuous Output On Current ma V O Output Voltage (output switched off) 4 V Micronas 7

8 .6. Electrical Characteristics at T J = 4 C to +17 C, = 4. V to 4 V, as not otherwise specified in Conditions Typical Characteristics for T J = 5 C and = 1 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions I DD Supply Current ma T J = 5 C I DD Z Supply Current over Temperature Range Overvoltage Protection at Supply ma V I DD = 5 ma, T J = 5 C, t = ms V OZ Overvoltage Protection at Output 8.5 V I OH = 5 ma, T J = 5 C, t = ms V OL Output Voltage 16 8 mv I OL = ma, T J = 5 C V OL Output Voltage over Temperature Range 16 4 mv I OL = ma I OH Output Leakage Current.1.1 µa Output switched off, T J = 5 C, V OH 4 V I OH f osc t d Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Delay Time between Switching Threshold B and Edge of Output over Temperature Range 1 µa Output switched off, T J 15 C, V OH 4 V 6 khz T J = 5 C 5 µs B > + 4 mt or B < 4 mt t en(o) Enable Time of Output after 18 µs = 1 V Setting of B > + mt or B < mt t r Output Rise Time.7.4 µs = 1 V, R L = 8 Ohm, C L = pf t f Output Fall Time.5.4 µs = 1 V, R L = 8 Ohm, C L = pf R thjsb case SOT-89B R thja case TO-9UA Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point 15 K/W Fiberglass Substrate mm x 1 mm x 1.5mm, pad size see Fig. 15 K/W 8 Micronas

9 .7. Magnetic Characteristics Overview at T J = 4 C to +17 C, = 4. V to 4 V, Typical Characteristics for = 1 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter On point Off point Hysteresis B HYS Unit Switching Type T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. HAL 61 4 C mt bipolar 5 C mt 17 C mt HAL 69 4 C mt unipolar 5 C mt 17 C mt Note: For detailed descriptions of the individual types, see pages 1 and following Fig. : Recommended pad size SOT-89B Dimensions in mm Micronas 9

10 ma 5 HAL 6x ma 7 HAL 6x T A = 4 C I DD T A = 5 C 15 T A =1 C I DD T A =17 C = 4. V = 1 V 1 1 = 4 V V C Fig. 4: Typical supply current versus supply voltage T A Fig. 6: Typical supply current versus ambient temperature ma 7 HAL 6x mv 4 HAL 6x I O = ma I DD T A = 4 C T A = 5 C 1 T A =1 C T A =17 C V 5 V OL = 4. V V 5 DD = 1 V = 4 V C T A Fig. 5: Typical supply current versus supply voltage Fig. 7: Typical output low voltage versus ambient temperature 1 Micronas

11 mv 4 5 V OL 5 HAL 6x I O = ma A HAL6x I OH 1 T A =17 C 1 1 T A =15 C 1 T A =1 C T A = 4 C T A = 5 C 5 T A =1 C T A =17 C V 1 T A =5 C T A = 4 C V Fig. 8: Typical output low voltage versus supply voltage V OH Fig. 1: Typical output leakage current versus output voltage mv 4 5 V OL 5 15 HAL 6x I O = ma µa HAL6x I OH T A = 4 C T A = 5 C 5 T A =1 C T A =17 C V 1 V O = 4 V C Fig. 9: Typical output low voltage versus supply voltage Fig. 11: Typical output leakage current versus ambient temperature T A Micronas 11

12 HAL61 4. Type Description 4.1. HAL61 The HAL 61 is a very sensitive bipolar switching sensor (see Fig. 4 1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. Applications The HAL61 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, crank shaft sensors, CAM shaft sensors, and magnetic encoders. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: V O Output Voltage B HYS switching type: bipolar very high sensitivity typical : 1.4 mt at room temperature typical :.6 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 15 khz V OL Fig. 4 1: Definition of magnetic switching points for the HAL61 B Magnetic Characteristics at T J = 4 C to +17 C, = 4. V to 4 V, Typical Characteristics for = 1 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset SET Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C mt 5 C mt 1 C mt 14 C mt 17 C mt The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 1 Micronas

13 HAL61 mt HAL 61 mt HAL T A = 4 C T A = 5 C T A = 1 C T A = 15 C V 1 = 4. V = 1 V = 4 V C Fig. 4 : Typ. magnetic switching points versus supply voltage Fig. 4 4: Typ. magnetic switching points versus temperature T A mt HAL T A = 4 C T A = 5 C T A = 1 C T A = 15 C V Fig. 4 : Typ. magnetic switching points versus supply voltage Micronas 1

14 HAL HAL69 The HAL 69 is an unipolar switching sensor (see Fig. 4 5). The HAL69 is the improved successor of the HAL68 with the same magnetic characteristics. The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar medium sensitivity typical : 17 mt at room temperature typical : 15 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 15 khz Applications The HAL 69 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS V OL Fig. 4 5: Definition of magnetic switching points for the HAL69 B typical temperature coefficient of magnetic switching points is 6 ppm/k Magnetic Characteristics at T J = 4 C to +17 C, = 4. V to 4 V, Typical Characteristics for = 1 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C mt 5 C mt 1 C mt 14 C mt 17 C mt The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 14 Micronas

15 HAL69 mt HAL 69 mt HAL T A = 4 C T A = 5 C T A = 1 C 5 = 4. V = 1 V T A = 15 C = 4 V V C Fig. 4 6: Typ. magnetic switching points versus supply voltage Fig. 4 8: Typ. magnetic switching points versus temperature T A mt HAL T A = 4 C T A = 5 C T A = 1 C T A = 15 C V Fig. 4 7: Typ. magnetic switching points versus supply voltage Micronas 15

16 5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T J ) is higher than the temperature outside the package (ambient temperature T A ). T J = T A + T At static conditions, the following equation is valid: T = I DD * * R th For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I DD and R th, and the max. value for from the application. For all sensors, the junction temperature range T J is specified. The maximum ambient temperature T Amax can be calculated as: T Amax = T Jmax T 5.. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figure 4 9). The series resistor and the capacitor should be placed as closely as possible to the sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 489 part 1 (Interferences conducted along supply lines in 1 V onboard systems), part (Electrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances). Please contact MICRONAS for the detailed investigation reports with the EMC and ESD results. Note: The international standard ISO 767 is similar to the used product standard DIN 489. R V Ω 5.. Start-up Behavior 1 R L 1. kω Due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. The parameter t en(o) is specified in the Electrical Characteristics (see page 8). V EMC V P 4.7 nf OUT pf During the initialization time, the output state is not defined and the output can toggle. After t en(o), the output will be low if the applied magnetic field B is above. The output will be high if B is below. For magnetic fields between and, the output state of the HAL sensor after applying will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above max, respectively, below min. GND Fig. 4 9: Test circuit for EMC investigations 6. Data Sheet History 1. Final data sheet: HAL61, HAL69, Hall Effect Sensor Family, Feb.,, PD. First release of the final data sheet. Micronas GmbH Hans-Bunte-Strasse 19 D-7918 Freiburg (Germany) P.O. Box 84 D-798 Freiburg (Germany) Tel Fax docservice@micronas.com Internet: Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (/) Order No DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 16 Micronas