Digital Integrated Circuits EECS 312
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1 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) NTT Fujitsu M-780 IBM RY5 Jayhawk(dual) IBM RY7 Prescott T-Rex Mckinley Squadrons IBM GP Pentium Radio Receive for Mesh Maintenance 2-6 ma Typical Current Draw 1 sec Heartbeat 30 beats per sample Sampling and Radio Transmission 9-15 ma Low Power Sleep ma Heartbeat 1-2 ma Time (seconds) Digital Integrated Circuits EECS Teacher: Robert Dick Office: 2417-E EECS dickrp@umich.edu Phone: Cellphone: GSI: Shengshou Lu Office: 2725 BBB luss@umich.edu HW engineers SW engineers Current (ma) IBM ES9000 Bipolar CMOS Power density (Watts/cm 2 ) Year of announcement IBM Z9
2 Lecture plan 1. Most confusing points for the week Robert Dick Digital Integrated Circuits
3 Policy on confusing points If it doesn t make sense, I will either 1 cover it in more detail right away, 2 indicate when it will be covered in detail, or 3 invite you to office hours. 3 Robert Dick Digital Integrated Circuits
4 Why and when does an NMOS-based consume more power than a CMOS inverter? If R is big, low high output transition is slow. If R is slow, constant power consumption whenever input is high. Derive and explain. 4 Robert Dick Digital Integrated Circuits
5 What is leakage power consumption? What is dynamic power consumption? Subthreshold leakage: not a perfect switch at V t. Gate leakage. Dynamic power. Derive and explain. 5 Robert Dick Digital Integrated Circuits
6 What is the difference between a source and drain? Source is the side the charge carriers for the MOSFET come from. Drain is the side to which the charge carriers go. Key question: Which terminal has a higher voltage and which terminal has a lower voltage? Derive and explain. 6 Robert Dick Digital Integrated Circuits
7 Lecture plan 1. Most confusing points for the week Robert Dick Digital Integrated Circuits
8 Why diodes? In the process of building MOSFETs, we accidentally make diodes. Must understand their properties. What we learn about device physics here will help us understand MOSFETs in later lectures. 8 Robert Dick Digital Integrated Circuits
9 Diode physical structure 9 Robert Dick Digital Integrated Circuits
10 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
11 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
12 Material properties Conduction or Eg Heat Eg Valence Insulator Semiconductor Metal Electron mobility µ n is a bit over twice that of hole µ p. Units are cm2 Vs. 12 Robert Dick Digital Integrated Circuits
13 Example dopants Example donor: As. Example acceptor: B. 13 Robert Dick Digital Integrated Circuits
14 What are the electrons and holes we have been discussing? We mean only electrons in the conduction band, not the valence band. We mean only holes in the valence band, not the conduction band. The conduction band is mostly empty for a semiconductor. The valence band is mostly full for a semiconductor. 14 Robert Dick Digital Integrated Circuits
15 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
16 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
17 Diffusion equation φ( r,t) t = (D(φ, r) φ( r,t)) r: location t: time φ( r,t): density D( r, t): diffusion coefficient : vector differential operator If D is constant, φ( r,t) t = D 2 φ( r,t) 16 Robert Dick Digital Integrated Circuits
18 Diffusion example 1 V Time Position Derive and explain. Note: Python is awesome.
19 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
20 Junction depletion 19 Robert Dick Digital Integrated Circuits
21 Drift velocity The drift velocity v d = µξ, where µ is the mobility and ξ is the electric field. Net velocity must be small compared to particle random motion velocity for this to hold more on this soon. 20 Robert Dick Digital Integrated Circuits
22 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
23 Built-in potential [ ] NA N D Φ 0 = Φ T ln Φ T = kt q n 2 i (1) (2) n i : intrinsic charge carrier concentration. N x : acceptor and donor concentrations. k: Boltzmann constant T: temperature q: elementary charge 22 Robert Dick Digital Integrated Circuits
24 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
25 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
26 Diode operation 24 Robert Dick Digital Integrated Circuits
27 Diode current ) V D φ I D = I S (e T 1 I D : diode current V D : diode voltage I S : saturation current constant φ T = kt q : thermal voltage k: Boltzmann constant T: temperature q: elementary charge 25 Robert Dick Digital Integrated Circuits
28 Step-by-step diode explanation 1 Dope regions with donors and acceptors. 2 N- and P-doped regions are in contact. 3 Diffusion according to diffusion equation. 4 Drift due to electrical field causes drift diffusion effects to reach steady-state. 5 Left with built-in potential, and depletion region (without mobile charge carriers) near junction. 6 Reverse bias (making P voltage lower than N voltage) just makes depletion region bigger. 7 Forward bias at first reduces depletion region width, then allows mobile electrons and holes to combine at junction sudden increase in current! 8 At extreme reverse bias, the few mobile carriers that get into the depletion region so fast that they collide with silicon atoms, generating electron-hole pairs, chain reaction fills depletion region with mobile carriers sudden increase in current!
29 Avalanche breakdown 27 Robert Dick Digital Integrated Circuits
30 Diode capacitance C J0 C J = (1 V D /Φ 0 ) m m = 0.5 for abrupt junctions, m = 0.33 for linear junctions 28 Robert Dick Digital Integrated Circuits
31 Diffusion capacitance A D : area of diode ǫ Si : permittivity of silicon N X : carrier density ǫ Si q N A N D 1 C J0 = A D 2 N A +N D φ 0 φ 0 = φ T ln N AN D n i 2 φ T = kt q n i : intrinsic carrier concentration 29 Robert Dick Digital Integrated Circuits
32 Summary of basic device physics and diodes What are the electrons, holes, dopants, and acceptors we have been talking about? What are diffusion and drift? What is built-in potential? Avalanche breakdown? Intrinsic carriers? 30 Robert Dick Digital Integrated Circuits
33 Upcoming topics Transistor static behavior. Fabrication. Transistor dynamic behavior. Interconnect. 31 Robert Dick Digital Integrated Circuits
34 Lecture plan 1. Most confusing points for the week Robert Dick Digital Integrated Circuits
35 assignment and announcement 12 September: Section in J. Rabaey, A. Chandrakasan, and B. Nikolic. Digital Integrated Circuits: A Design Perspective. Prentice-Hall, second edition, September: Laboratory assignment one. 33 Robert Dick Digital Integrated Circuits
Digital Integrated Circuits EECS 312
14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980
Digital Integrated Circuits EECS 312
14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980
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