Broadcom BCM43224KMLG Baseband/MAC/Radio All-in-One Die SMIC 65 nm Process
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1 Broadcom BCM43224KMLG Baseband/MAC/Radio All-in-One Die SMIC 65 nm Process Structural Analysis 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel:
2 Structural Analysis Some of the information in this report may be covered by patents, mask, and/or copyright protection. This report should not be taken as an inducement to infringe on these rights. Chipworks Inc all rights reserved. Chipworks and the Chipworks logo are registered trademarks of Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization s corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. SAR CKWM Revision 1.0 Published: December 10, 2012
3 Table of Contents Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Device Overview 2.1 Package and Die 2.2 Die Features 3 Layout 3.1 Layout Overview 4 Process Analysis 4.1 General Device Structure 4.2 Dielectrics 4.3 Metallization 4.4 Vias and Contacts 4.5 Capacitor 4.6 Logic Transistors and Polysilicon 4.7 Isolation 4.8 Wells and Substrate 5 SRAM Cell Analysis 5.1 Overview 5.2 6T SRAM Schematic 5.3 6T SRAM Analysis Plan View 5.4 Cross-Sectional 6T SRAM Analysis 5.5 8T SRAM Analysis 6 Materials Analysis 6.1 Overview 6.2 Dielectrics 6.3 Metals
4 Structural Analysis 7 Critical Dimensions 7.1 Package, Die, and Standard Logic Cell Size 7.2 Dielectrics 7.3 Metals 7.4 Vias and Contacts 7.5 Transistors 7.6 Isolation 7.7 Wells and Substrate 7.8 SRAM Transistors 8 References 9 Statement of Measurement Uncertainty and Scope Variation About Chipworks
5 Overview Overview 1.1 List of Figures 2 Device Overview Package Top Package Bottom Package X-Ray Die Photograph Die Markings Die Photograph at Polysilicon Layer Annotated with SRAM Memory Locations Die Photograph at Polysilicon Layer Annotated with Analysis Sites Die Corner A Die Corner B Die Corner C Die Corner D Bond Pads Inductor 1 of Inductor 2 of Inductor 3 of Inductor 4 of Inductor 5 of Inductor 6 of Inductor 7 of 41 3 Layout Logic Transistor Plan View Minimum NAND Cell Size Plan View Polysilicon Resistor Plan View 4 Process Analysis General Structure Die Thickness Die Edge Die Seal General View of Dielectrics SEM of Passivation and Interlevel Dielectric ILD TEM of Passivation TEM of ILD SEM of ILD 6-4 and ILD SEM of ILD 6-2 and ILD TEM of ILD TEM of ILD TEM of ILD TEM of ILD TEM of ILD TEM of PMD
6 Overview SEM of Metal TEM of Layer Between Passivation 1 and Metal TEM of Metal 8 Barrier SEM of Minimum Width and Minimum Pitch Metal SEM of Metal TEM of Metal 7 Liner SEM of Metal TEM of Metal 6 Liner SEM of Metal TEM of Metal 5 Minimum Pitch SEM of Metal SEM of Metal 4 Liner TEM of Metal TEM of Metal 3 Liner SEM of Metal 3 Minimum Pitch TEM of Metal TEM of Metal 1 Minimum Width TEM of Metal 1 Liner SEM of Metal 1 Minimum Pitch SEM of Via 7s Mínimum Pitch SEM of Pitch Via 6s SEM of Pitch Via 5s SEM of Via 4s TEM of Via 3s SEM of Via 2s TEM of Via 1s STEM Dark Field of Via 1 Linescan Location TEM Contact to Silicon TEM of Contact Plug Top TEM Contact Plug Bottom TEM Contact to Polysilicon Contact in SRAM Array SEM Interdigitized Fingers Capacitor Close-Up SEM Interdigitized Fingers Capacitor SEM Interdigitized Fingers Capacitor Along the Finger SEM Interdigitized Fingers Capacitors SEM of Likely MOS Capacitor Array SEM Minimum Gate Length Logic NMOS Transistor SEM Minimum Gate Length Logic PMOS Transistor TEM Minimum Gate Length Logic Transistors TEM Close-Up of Minimum Gate Length Logic Transistor TEM Logic Transistor Gate Oxide TEM of Minimum Contacted Gate Pitch SEM Minimum Polysilicon Pitch Logic Transistor Width
7 Overview TEM Wide Gate Transistor TEM Thick Gate Oxide Polysilicon Resistor TEM Minimum STI Width in the Logic Region TEM of STI Recess TEM of STI Structure Covered by Polysilicon TEM Close-Up of the STI Edge TEM of STI Under Polysilicon SEM of STI in the SRAM Region SRP Carrier Concentration in P-Well SRP Carrier Concentration in N-Well SCM of P-Well and N-Well 5 SRAM Cell Analysis T SRAM Schematic SRAM at Metal 4 Layer SRAM at Metal 3 Layer SRAM at Metal 2 Layer SRAM at Metal 1 Layer SRAM at Contact and Polysilicon Layers SRAM at Substrate Layer T SRAM NMOS Cross-Sectional View Perpendicular to Wordlines TEM NMOS Transistors at 6T SRAM TEM NMOS Transistor Close-Up T SRAM PMOS Cross-Sectional View Perpendicular to Wordlines TEM PMOS Transistor TEM PMOS Transistor Close-Up T SRAM Cross-Sectional View Parallel to Wordline T SRAM Cell Schematic T SRAM Array at Polysilicon Layer 6 Materials Analysis TEM-EDS Spectrum of Passivation TEM-EDS Spectrum of ILD 7-4 and ILD TEM-EDS Spectrum of ILD 7-2 and ILD TEM-EDS Spectrum of ILD 6-4 and ILD TEM-EDS Spectrum of ILD 6-2 and ILD TEM-EDS Spectrum of ILD TEM-EDS Spectrum of ILD TEM-EDS Spectrum of ILD TEM-EDS Spectrum of ILD TEM-EDS Spectrum of ILD TEM-EDS Spectrum of PMD 5, PMD 4, and PMD TEM-EDS Spectrum of PMD 2 and PMD TEM-EDS Spectrum of Metal 8 Bulk TEM-EDS Spectrum of Metal 8 Barrier Layer
8 Overview TEM-EDS Spectrum of Metal 1 Liner TEM-EDS Linescan Through Via 1 Fill and Via 1 Liner TEM-EDS of Contact Liner TEM-EDS Spectrum of Gate Silicide TEM-EDS Spectrum of S/D Silicide 1.2 List of Tables 1 Overview Device Identification Die Summary Process Summary 4 Process Analysis Dielectric Thicknesses Metallization Vertical Dimensions Metallization Horizontal Dimensions Via and Contact Dimensions Logic Transistors Horizontal Dimensions Logic Transistors Vertical Dimensions STI Critical Dimensions P-Well and N-Well Impurity Concentrations and Depths 5 SRAM Cell Analysis T SRAM Transistors Dimensions 7 Critical Dimensions Package, Die, and Standard Logic Cell Size Dielectric Thicknesses Metallization Vertical Dimensions Metallization Horizontal Dimensions Via and Contact Dimensions Transistor Horizontal Dimensions Transistor Vertical Dimensions STI Critical Dimensions N-Well and P-Well Impurity Concentrations and Depths SRAM Transistor Dimensions
9 About Chipworks About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at Chipworks 1891 Robertson Road, Suite 500 Ottawa, Ontario K2H 5B7 Canada T F Web site: info@chipworks.com Please send any feedback to feedback@chipworks.com
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