BTS TAA. Data Sheet. Automotive Power. Smart High-Side Power Switch. Rev. 1.3,

Transcription

1 Smar High-Side Power Swich Daa Shee Rev. 1.3, Auomoive Power

2 Table of Conens Table of Conens 1 Overview Block Diagram Pin Configuraion Pin Assignmen Pin Definiions and Funcions Volage and Curren Definiion General Produc Characerisics Absolue Maximum Raings Funcional Range Thermal Resisance Funcional Descripion Power Sage Oupu ON-Sae Resisance Swiching a Resisive Load Swiching an Inducive Load Inverse Curren Capabiliy PWM Swiching Inpu Pins Inpu Circuiry Inpu Pin Volage Proecion Funcions Loss of Ground Proecion Proecion during Loss of Load or Loss of VS Condiion Undervolage Behavior Overvolage Proecion Reverse Polariy Proecion Overload Proecion Acivaion of he Swich ino Shor Circui (Shor circui Type 1) Shor Circui Appearance when he Device is already ON (Shor circui Type 2) Temperaure Limiaion in he Power DMOS Diagnosic Funcions IS Pin SENSE Signal in Differen Operaion Mode SENSE Signal in he Nominal Curren Range SENSE Signal Variaion and calibraion SENSE Signal Timing SENSE Signal in Case of Shor Circui o VS SENSE Signal in Case of Over Load Elecrical characerisics BTS515-1TAA Elecrical Characerisics Table General Produc Characerisics Package Oulines Applicaion Informaion Furher Applicaion Informaion Revision Hisory Daa Shee 2 Rev. 1.3,

3 Smar High-Side Power Swich BTS515-1TAA 1 Overview Applicaion All ypes of resisive and capaciive loads Suiable for inducive loads in conjuncion wih an effecive, peripheral free wheeling circui Replaces elecromechanical relays and fuses Mos suiable for applicaions wih high curren loads, such as heaing sysem, main swich for power disribuion, sar-sop power supply swich PWM applicaion wih low frequencies PG-TO Feaures One channel device Low Sand-by curren Wide inpu volage range (can be driven by logic levels 3.3V and 5V as well as direcly by V S ) Elecrosaic discharge proecion (ESD) Opimized Elecromagneic Compaibiliy (EMC) Logic ground independen from load ground Very low leakage curren on OUT pin Compaible o cranking pulse requiremen (es pulse 4 of ISO7637 and cold sar pulse in LV124) Embedded diagnosic funcions Embedded proecion funcions Green Produc (RoHS complian) AEC Qualified Descripion The BTS515-1TAA is a 1.5mΩ single channel Smar High-Side Power Swich, embedded in a PG-TO package, providing proecive funcions and diagnosis. I conains Infineon Reversave. The power ransisor is buil by a N-channel power MOSFET wih charge pump. I is specially designed o drive high curren loads up o 8A, for applicaions like swiched baery couplings, power disribuion swiches, heaers, glow plugs, in he harsh auomoive environmen. Type Package Marking BTS515-1TAA PG-TO S515A Daa Shee 3 Rev. 1.3,

4 Overview Table 1 Produc Summary Parameer Symbol Values Operaing volage range V S(OP) 8 V 18 V Exended supply volage conain dynamic V S (DYN) 3.2 V 28 V undervolage capabiliy Maximum on-sae resisance a T j = 15 C R DS(ON) 3 mω Minimum nominal load curren I L (nom) 33 A Typical curren sense differenial raio dk ILIS 515 Minimum shor circui curren hreshold I L (OVL) 135 A Maximum sand-by curren for he whole device I S (OFF) 18 μa wih load a T A =T J = 85 C Maximum reverse baery volage a T A = 25 C for 2 min -V S(REV) 16 V Embedded Diagnosic Funcions Proporional load curren sense Shor circui / Overemperaure deecion Lached saus signal afer shor circui or overemperaure deecion Embedded Proecion Funcions Infineon Reversave: Reverse baery proecion by self urn ON of power MOSFET Infineon Inversave: Inverse operaion robusness capabiliy Secure load urn-off while device loss of GND connecion Overemperaure proecion wih lach Shor circui proecion wih lach Overvolage proecion wih exernal componens Enhanced shor circui operaion Daa Shee 4 Rev. 1.3,

5 Block Diagram 2 Block Diagram R VS V S inernal power supply volage sensor over emperaure Overvolage clamp IN driver logic gae conrol & charge pump over curren swich OFF ESD proecion load curren sense OUT IS GND Blockdiagram Figure 1 Block Diagram for he BTS515-1TAA Daa Shee 5 Rev. 1.3,

6 Pin Configuraion 3 Pin Configuraion 3.1 Pin Assignmen Figure 2 Pin Configuraion 3.2 Pin Definiions and Funcions Pin Symbol Funcion 1 GND GrouND; Ground connecion 2 IN INpu; Inpu signal for channel acivaion. HIGH acive 3 IS Sense; Provides signal for diagnosis 4, Cooling ab VS Supply Volage; Baery volage 5, 6, 7 OUT OUTpu; Proeced high side power oupu 1) 1) All oupu pins are inernally conneced and hey also have o be conneced ogeher on he PCB. No shoring all oupus on PCB will considerably increase he ON-sae resisance and decrease he curren sense / overcurren ripping accuracy. PCB races have o be designed o wihsand he maximum curren. Daa Shee 6 Rev. 1.3,

7 Pin Configuraion 3.3 Volage and Curren Definiion Figure 3 shows all erms used in his daashee, wih associaed convenion for posiive values. V S I S I IN IN V S V IN V DS OUT I OUT V b, IS I IS IS GND V OUT V IS I GND Figure 3 Volage and Curren Definiion Daa Shee 7 Rev. 1.3,

8 General Produc Characerisics 4 General Produc Characerisics 4.1 Absolue Maximum Raings Table 2 Absolue Maximum Raings 1) T j = -4 C o +15 C; (unless oherwise specified) Parameer Symbol Values Uni Noe / Number Min. Typ. Max. Tes Condiion Supply Volages Supply Volage V S V Reverse polariy volage -V S(REV) 16 V 2) < 2 min T A = 25 C R L.5Ω Supply volage for load dump proecion V S(LD) 45 V 3) R I = 2Ω R L = 2.2Ω R IS = 1kΩ R IN = 4.7kΩ Shor circui capabiliy Supply volage for shor circui proecion Shor circui is permanen: IN pin oggles shor circui (SC ype 1) GND pin V S(SC) 5 2 V n RSC1 1k (Grade D) Curren hrough ground pin I GND -15 6) Inpu Pin 1 7) 15 4) R ECU = 2mΩ L ECU = 1μH R cable = 6mΩ/m L cable = 1μH/m l = o 5m R, C as shown in Figure 51 See Chaper 5.3 5) ma 2 min Volage a IN pin V IN -.3 V S V Curren hrough IN pin I IN -5-5 Maximum rery cycle rae in faul condiion Sense Pin 5 ma 5 6) 2 min f faul 1 Hz Volage a IS pin V IS -.3 V S V Curren hrough IS pin I IS -15 6) 1 7) 15 ma 2 min Daa Shee 8 Rev. 1.3,

9 General Produc Characerisics Table 2 Absolue Maximum Raings (con d) 1) T j = -4 C o +15 C; (unless oherwise specified) Parameer Symbol Values Uni Noe / Min. Typ. Max. Tes Condiion Number Power Sage Average power dissipaion P TOT 2 W T C = -4 C o C Volage a OUT Pin V OUT -64 V Temperaures Juncion Temperaure T J C Dynamic emperaure increase while swiching ΔT J 6 K See Chaper Sorage Temperaure T STG C ESD Suscepibiliy ESD suscepibiliy (all pins) V ESD -2 2 kv HBM 8) ESD suscepibiliy OUT Pin vs. GND / V S V ESD -4 4 kv HBM 8) ) No subjec o producion es, specified by design. 2) The device is mouned on a FR4 2s2p board according o Jedec JESD51-2,-5,-7 a naural convecion. 3) V S(LD) is seup wihou DUT conneced o he generaor per ISO ) In accordance o AEC Q1-12 5) In accordance o AEC Q1-12. Tes abored afer 1, cycles. Shor circui condiions deviaing from AEC Q1-12 may influence he specified shor circui cycle number in he daashee. 6) The oal reverse curren (sum of I GND, I IS and -I IN ) is limied by -V S(REV)_max and R VS. 7) T C 125 C 8) ESD suscepibiliy, HBM according o ANSI/ESDA/JEDEC JS-1 Noes 1. Sresses above he ones lised here may cause permanen damage o he device. Exposure o absolue maximum raing condiions for exended periods may affec device reliabiliy. 2. Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. Daa Shee 9 Rev. 1.3,

10 General Produc Characerisics 25 2 I L,max [A] E-3 1.E-2 1.E-1 1.E+ 1.E+1 pulse [sec] Figure 4 Maximum Single Pulse Curren vs. Pulse Time, T J 15 C, T amb = 85 C Above diagram shows he maximum single pulse curren ha can be driven for a given pulse ime pulse. The maximum reachable curren may be smaller depending on he curren limiaion level. Pulse ime may be limied due o hermal proecion of he device. Daa Shee 1 Rev. 1.3,

11 General Produc Characerisics 4.2 Funcional Range Table 3 Funcional Range Parameer Symbol Values Uni Noe / Number Min. Typ. Max. Tes Condiion Nominal operaing volage V S(OP) 8 18 V Exended operaing volage V S(OP_EXT) V 1) V IN 2.2V I L I L(NOM) T J 25 C Parameer deviaions possible Exended operaing volage conain shor dynamic undervolage capabiliy Undervolage urn OFF volage Undervolage shudown hyseresis V S(DYN) 3.2 2) V 28 V 1) V IN 2.2V I L I L(NOM) T J = 15 C Parameer deviaions possible 1) acc. o ISO V S(UV_OFF) 4.5 V 1) V IN 2.2V R L = 27Ω V S decreasing See Figure 19 V S(UV)_HYS 5 1) mv R L = 27Ω See Figure 19 Slewrae a OUT dv DS /d 1 1) V/μs V DS < 3V See Chaper Drain o source volage in V DS_OFF 28 V 1) VIN.8V OFF condiion 1) No subjec o producion es. Specified by design 2) T A = 25 C; R L =.5Ω; pulse duraion 6ms; cranking capabiliy is depending on load and mus be verified under applicaion condiions Noe: Wihin he funcional or operaing range, he IC operaes as described in he circui descripion. The elecrical characerisics are specified wihin he condiions given in he Elecrical Characerisics able Daa Shee 11 Rev. 1.3,

12 General Produc Characerisics 4.3 Thermal Resisance Noe: This hermal daa was generaed in accordance wih JEDEC JESD51 sandards. For more informaion, go o Table 4 Thermal Resisance Parameer Symbol Values Uni Noe / Number Min. Typ. Max. Tes Condiion Juncion o Case R hjc.5 K/W 1) Juncion o Ambien R hja(2s2p) 2 K/W 1)2) Juncion o Ambien R hja 7 K/W 1)3) ) No subjec o producion es, specified by design. 2)Specified R hja value is according o Jedec JESD51-2,-5,-7 a naural convecion on FR4 2s2p board; The Produc (Chip+Package) was simulaed on a mm board wih 2 inner copper layers (2 x 7μm Cu, 2 x 35μm Cu). Where applicable a hermal via array under he exposed pad conaced he firs inner copper layer. T A =25 C. Device is dissipaing 2W power. 3)Specified R hja value is according o Jedec JESD51-2,-5,-7 a naural convecion on FR4 1sp board; he Produc /Chip+Package) was simulaed on a 76.2 x x 1.5 mm board wih only one op copper layer 1x7μm. T A =25 C. Device is dissipaing 2W power. Figure 5 is showing he ypical hermal impedance of BTS515-1TAA mouned according o JEDEC JESD51-2,-5,-7 a naural convecion on FR4 1sp and 2s2p boards. 1 1 JEDEC 1sp JEDEC 2s2p ZhJA [K/W] Time [s] Figure 5 Typical Transien Thermal Impedance Z h(ja) =f(ime) for Differen PCB Condiions Daa Shee 12 Rev. 1.3,

13 Funcional Descripion 5 Funcional Descripion 5.1 Power Sage The power sage is buil by a N-channel power MOSFET (DMOS) wih charge pump Oupu ON-Sae Resisance The ON-sae resisance R DS(ON) depends on he supply volage as well as he juncion emperaure T J. Figure 31 shows he dependencies in erms of emperaure and supply volage, for he ypical ON-sae resisance. The behavior in reverse polariy is described in Chaper A HIGH signal (see Chaper 5.2) a he inpu pin causes he power DMOS o swich ON wih a dedicaed slope, which is opimized in erms of EMC emission Swiching a Resisive Load Figure 6 shows he ypical iming when swiching a resisive load. The power sage has a defined swiching behavior. Defined slew raes resuls in lowes EMC emission a minimum swiching losses. V OUT 9% V S V OUT V/ ON I OUT I OUT V/ OFF 5% V S 25% V S ON_delay OFF_delay 1% V S ON V IN VIN OFF Figure 6 Swiching a Resisive Load:Timing The connecion o he load as well as he load iself (if no purely resisive) bring an inducive componen. For ha reason he drain o source volage of he BTS515-1TAA during swich off can differ compared o he pure resisive load condiion (see Figure 7). I mus be assured ha under hese condiions he drain o source volage does no exceed he V DS(CL)min. If V DS(CL)min is exceeded, a free wheeling pah should be implemened following he recommendaion provided in he nex chaper. Daa Shee 13 Rev. 1.3,

14 Funcional Descripion VDS V DS VDS(CL) VDS(CL) I L I L Pure resisive load Resisive load wih wire inducance Figure 7 Effec of he wire inducance Swiching an Inducive Load When swiching OFF inducive loads wih high side swiches, he volage V OUT is driven below ground poenial, due o he fac ha he inducance inends o coninue driving he curren. To preven he desrucion of he device due o high volages, he device implemens an overvolage proecion, which clamps he volage beween V S and V OUT a V DS(CL) (see Figure 8). Neverheless i is no recommended o operae he device repeiively under his condiion. Therefore, when driving inducive loads, a free wheeling diode mus be always placed. R VS VS IN LOGIC Overvolage clamp V DS V BAT V IN GND OUT I L L, R L V OUT Figure 8 Overvolage Clamp Daa Shee 14 Rev. 1.3,

15 Funcional Descripion V IN V IN V OUT V OUT V S V S V S-V DS(CL) V S-V DS(CL) I L I L Wihou free wheeling diode Wih free wheeling diode Figure 9 Swiching an Inducance wih or wihou free wheeling diode I is imporan o verify he effeciveness of he freewheeling soluion (see Figure 9), which means he selecion of he proper diode and of an appropriae free wheeling pah. Wih regard o he choice of he free wheeling diode, low hreshold and fas response are key parameer o achieve an effecive resul. Moreover he diode should be placed in order o have he shores wire connecion wih he load (see Figure 1). BTS515-1TAA Free Wheeling Diode Inducive Load No opimized free wheeling pah BTS515-1TAA Free Wheeling Diode Inducive Load Recommended free wheeling pah Figure 1 Opimizaion of he free wheeling pah Daa Shee 15 Rev. 1.3,

16 Funcional Descripion Inverse Curren Capabiliy In case of inverse curren, meaning a volage V OUT(INV) a he oupu higher han he supply volage V S, a curren I L(INV) will flow from oupu o V S pin via he body diode of he power ransisor (please refer o Figure 11). In case he IN pin is HIGH, he power DMOS is already acivaed and keeps ON. In case, he inpu goes from L o H, he DMOS will be acivaed. Under inverse condiion, he device is no overemperaure / overload proeced. The IS pin is high impedance. Due o he limied speed of INV comparaor, he oupu volage slope needs o be limied. V BAT V S Gae driver V OUT (INV) INV OL Comp. comp. OUT I L(INV) GND Figure 11 Inverse Curren Circuiry (a) Inverse spike during ON -mode for shor imes (< p,inv,nofault) (b) Inverse spike during ON -mode for imes > p,inv,nofault (c) Inverse spike during ON -mode wih shor circui afer leaving Inverse mode V OUT V OUT V OUT V S V S V S < p, INV,no FAUL T > p, IN V,no FAU L T I IS OFF (rip ) I IS I IS I IS(faul) I IS(faul) sis(on)_j p, noin V, FAULT pis(fault ) Figure 12 Inernal Faul -flag se Inverse Behavior - Timing Diagram PWM Swiching For PWM swiching applicaion, a IN(RESETDELAY) parameer should be respeced by defining he maximum PWM frequency (see Figure 22). The average power over ime mus be below he specified value (see paramaer ) and is defined as (see Figure 13): P TOT = (swiching_on_energy + swiching_off_energy + I 2 L * R DS(ON) * DC ) / period For sysem wih PWM swiching, he maximum rery cycle (f faul ) under faul condiion should no be exceeded. Daa Shee 16 Rev. 1.3,

17 Funcional Descripion VIN VIN_H V IN_L P PTOT DC Figure 13 Swiching in PWM 5.2 Inpu Pins Inpu Circuiry The inpu circuiry is compaible wih 3.3V and 5V microconrollers or can be direcly driven by V S. The concep of he inpu pin is o reac o volage hreshold. Wih he Schmi rigger, he oupu is eiher ON or OFF. Figure 14 shows he elecrical equivalen inpu circuiry. R VS V S IN I IN GND Figure 14 Inpu Pin Circuiry Inpu Pin Volage The IN uses a comparaor wih hyseresis. The swiching ON / OFF akes place in a defined region, se by he hreshold V IN(L) Max and V IN(H) Min. The exac value where ON and OFF ake place depends on he process, as well as he emperaure. To avoid cross alk and parasiic urn ON and OFF, an hyseresis is implemened. This ensures immuniy o noise. Daa Shee 17 Rev. 1.3,

18 Funcional Descripion 5.3 Proecion Funcions The device provides embedded proecive funcions. Inegraed proecion funcions are designed o preven he desrucion of he IC from faul condiions described in he daashee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are designed neiher for coninuous nor for repeiive operaion. Figure 15 describes he ypical funcionaliy of he diagnosis and proecion block. V S V b,is IN ESD proecion curren sense V S( in) R VS VS V DS & 2V Driver 1 IS 1 I IS (faul ) Over - curren I L V IS (I L/dk ILIS ) ± I IS OUT IN(RESET I IS R IS If V OUT < V S(in ) - 3V: DELAY) R Q & I L>I CL 1 & S Q FAULT 3mV ϑ j>ϑ jt driver logic inverse comparaor GND Figure 15 Diagram of Diagnosis & Proecion Block Loss of Ground Proecion In case of loss of module or device ground, where he load remains conneced o ground, he device proecs iself by auomaically urning OFF (when i was previously ON) or remains OFF, regardless of he volage applied on IN pin. I is recommended o use inpu resisors beween he microconroller and he BTS515-1TAA o ensure swiching OFF of channel. In case of loss of module or device ground, a curren (I OUT(GND) ) can flow ou of he DMOS. Figure 16 skeches he siuaion. V ba R VS V S R IN Z(ESD -H) Z (AZ )I S Z(AZ)GND V IN IN Z(ESD-L) Logic OUT IS GND R IS Figure 16 Loss of Ground Proecion wih Exernal Componens Daa Shee 18 Rev. 1.3,

19 Funcional Descripion Proecion during Loss of Load or Loss of V S Condiion In case of loss of load wih charged primary inducances he maximum supply volage has o be limied. I is recommended o use a Z-diode, a varisor or V S clamping power swiches wih conneced loads in parallel. The volage mus be limied according o he minimum value of he parameer indicaed in Table 6. In case of loss of V S connecion, he inducance of he wire and/or of he load should be aken ino accoun and should be demagneized by providing a proper curren pah. I is recommended o proec he device using a zener diode ogeher wih a(v Z1 + V D1 < 16V), as shown in Figure 17. For a proper resar of he device afer loss of V S, he inpu volage mus be applied delayed o he supply volage. This can be realized by an capacior beween IN and GND (see Figure 51). For higher clamp volages, currens hrough all pins have o be limied according o he maximum raings. Please see Figure 17 and Figure 18 for deails. V BAT (A) R VS V S ex. componens acc. o eiher (A) or (B) required, no boh D 1 Logic (B) OUT Z 1 IN IS GND D 1 R/L cable R IN R IS Load V IN Z 1 Figure 17 Loss of V S V BAT L/R cable R VS V S Z 2 Logic IN IS GND OUT R IN R IS R/L cable V IN Load Figure 18 Loss of Load Daa Shee 19 Rev. 1.3,

20 Funcional Descripion Undervolage Behavior If he supply volage is in he area below V S(UV_OFF), he device is OFF (urns OFF). As soon as he supply volage is above V S(OP_EXT)_min, he device will swich ON again. Figure 19 skeches he undervolage behavior. V OUT VIN 2.2V V S V S(UV_OFF) V S(OP_EXT)_min Figure 19 Undervolage Behavior Overvolage Proecion In case V S(SC)_max < V S < V DS(CL), he device will swich ON/OFF as in nominal volage range. Parameers may deviae from he specified limis and he lifeime is reduced. The BTS515-1TAA provides an overvolage clamp funcionaliy, which suppresses non nominal overvolage ransiens by acively clamping he volage across he power sage (see Table 6, parameers ). The clamping volage V DS(CL) is depending on he juncion emperaure T j and load curren I L (see Figure 2 for deails). A repeiive operaion under clamping condiion mus be avoided. Daa Shee 2 Rev. 1.3,

21 Funcional Descripion V BAT R VS V S R IN Z (E SD- H) Z(AZ)IS Z(AZ)GND V IN IN Z(ESD -L) Logic OUT IS GND R IS Figure 2 Overvolage Proecion wih Exernal Componens Reverse Polariy Proecion In case of reverse polariy, he inrinsic body diode of he power DMOS causes power dissipaion. To limi he risk of overemperaure, he device provides Infineon Reversave funcion. The power in his inrinsic body diode is limied by urning he DMOS ON. The DMOS resisance is hen equal o R DS(ON)_REV. Addionally, he curren ino he logic has o be limied. The device includes a R VS resisor which limis he curren in he diodes. To avoid overcurren in he R VS resisor, i is neverheless recommended o use a R IN resisor. Please refer o maximum curren described in Chaper 4.1. Figure 21 shows a ypical applicaion. R IS is used o limi he curren in he sense ransisor which behaves as a diode. The recommended ypical values for R IN is 4.7kΩ and for R SENSE 1kΩ. -V BAT R VS I RVS V S Z (ESD -H ) Z (AZ)IS Z(AZ)GND Rev. ON Z (ESD-L) OUT DOUT R IN IN IS GND R IS -I L Microconroller GND I IN -I IS -I GND Figure 21 Reverse Polariy Proecion wih Exernal Componens Daa Shee 21 Rev. 1.3,

22 Funcional Descripion Overload Proecion In case of overload, high inrush curren or shor circui o ground, he BTS515-1TAA offers several proecion mechanisms. Any proecive swich OFF laches he oupu. To resar he device, i is necessary o se IN=LOW for > IN(RESETDELAY). This behavior is known as lach behavior. Figure 22 gives a skech of he siuaion Acivaion of he Swich ino Shor Circui (Shor circui Type 1) When he swich is acivaed ino shor circui, he curren will raise unil reaching he I L(TRIP) value. Afer OFF(TRIP), he device will urn OFF and laches unil he IN pin is se o low for > IN(RESETDELAY). An undervolage shudown will no rese he lached faul overcurren. For overload (shor circui or overemperaure), he maximum rery cycle (f faul ) under faul condiion mus be considered Shor Circui Appearance when he Device is already ON (Shor circui Type 2) When he device is in ON sae and a shor circui o ground appears a he oupu (SC2) wih a overcurren higher han I L(TRIP) for a ime longer han OFF(TRIP), he device auomaically urns OFF and laches unil he IN pin is se o low for > IN(RESETDELAY). An undervolage shudown will no rese he lached faul overcurren Temperaure Limiaion in he Power DMOS The BTS515-1TAA incorporaes an absolue (T J(TRIP) ) emperaure sensor. Acivaion of he sensor will cause an overheaed channel o swich OFF o preven desrucion. The device resars when he IN pin is oggled and he emperaure has decreased below T J(TRIP) - ΔT J(TRIP). An undervolage shudown may no rese he faul over emperaure. IN IN(RESETDELAY) I L OFF( TRIP) OFF (TRIP) I CL(1) I CL() T J T J(TRIP) T A I IS I IS(FAULT) sar Shor Circui 2 Inpu disable IIS(FAULT) disable Shor Circui 1 Inpu disable IIS(FAULT) disable Overemperaure Inpu disable IIS (F AULT) disable Figure 22 Overload Proecion Daa Shee 22 Rev. 1.3,

23 Funcional Descripion The curren sense exac signal iming can be found in he Chaper 5.4. I is represened here only for device s behavior undersanding. In order o allow he device o deec overemperaure condiions and reac effecively, i is recommended o limi he power dissipaion below P TOT (parameer ). Daa Shee 23 Rev. 1.3,

24 Funcional Descripion 5.4 Diagnosic Funcions For diagnosis purposes, he BTS515-1TAA provides a combinaion of digial and analog signal a pin IS IS Pin The BTS515-1TAA provides an enhanced curren sense signal called I IS a pin IS. As long as no hard failure mode occurs (shor circui o GND / overcurren / overemperaure) and he condiion V IS V OUT - 5V is fulfilled, a proporional signal o he load curren (raio k ILIS = I L / I S ) is provided. The complee IS pin and diagnosic mechanism is described in Figure 23. The accuracy of he sense curren depends on emperaure and load curren. In case of failure, a fixed I IS(FAULT) is provided. In order o enable he faul curren reporing, he condiion V S - V OUT > 2V mus be fulfilled. In order o ge he faul curren in he specified range, he condiion V S - V IS 5V mus be fulfilled. V s R VS FAULT V S -V OUT >2V I IS(FAULT) (I L / dk ILIS )± I IS Z IS(AZ) & 1 IS Figure 23 Diagnosic Block Diagram SENSE Signal in Differen Operaion Mode Table 5 Sense Signal, Funcion of Operaion Mode 1) Operaion mode Inpu Level Oupu Level V OUT Diagnosic Oupu (IS) 2) Normal operaion LOW (OFF) ~ GND I IS(OFF) Shor circui o GND GND Z Overemperaure Z Z Shor circui o VS V S Z Open Load Z Z Inverse curren > V S Z Normal operaion HIGH (ON) ~ V S I IS = (I L / dk ILIS ) ± I IS Overcurren condiion < V S I IS = (I L / dk ILIS ) ± I IS...I IS(FAULT) Shor circui o GND ~ GND I IS(FAULT) Overemperaure T J(TRIP) even Z I IS(FAULT) Shor circui o VS V S I IS =... I L / dk ILIS ± I IS Open Load ~ V S I IS Inverse curren > V S Z 1) Z = High Impedance 2) See Chaper for Curren Sense Range and Improved Curren Sense Accuracy Daa Shee 24 Rev. 1.3,

25 Funcional Descripion SENSE Signal in he Nominal Curren Range Figure 24 and Figure 25 show he curren sense as funcion of he load curren in he power DMOS. Usually, a pull-down resisor R IS is conneced o he curren sense pin IS. A ypical value is 1kΩ. The doed curve represens he ypical sense curren, assuming a ypical dk ILIS facor value. The range beween he wo solid curves shows he sense accuracy he device is able o provide, a a defined curren. I IS I L = ± I IS wih( I IS ) dk ILIS (1) Where he definiion of dk ILIS is: I dk L4 I L1 ILIS = I IS4 I IS1 (2) 3.5 dk ILIS (min) 3 dk ILIS (yp) 2.5 dk ILIS (max) 2 I IS (ma) I IS(max) I L1 I L2 I L3 I L4 I L (A) Figure 24 Curren Sense for Nominal and Overload Condiion SENSE Signal Variaion and calibraion In some applicaion, an enhanced accuracy is required around he device nominal curren range I L(NOM). To achieve his accuracy requiremen, a calibraion on he applicaion is possible. Afer wo poins calibraion, he BTS515-1TAA will have a limied I IS value spread a differen load currens and emperaure condiions. The I IS Daa Shee 25 Rev. 1.3,

26 Funcional Descripion variaion can be described wih he parameers Δ(dk ILIS(cal) ) and he α IS. The blue solid line in Figure 25 is he curren sense raio afer he wo poin calibraion. The slope of his line is defined as follow: dk KILIS( cal) = I Scal ( )2 I Scal ( )1 I Lcal ( )2 I Lcal ( )1 (3) The bluish in area in Figure 25 is he range where he curren sense raio can vary afer performing he calibraion. The accuracy of he load curren sensing is improved and, given a sense curren value I IS (measured in he applicaion), he load curren can be calculaed as follow: I L = dk ILIS( cal) 1 Δ( dk ILIS( cal) ) I 1 I IS( cal) IS α IS ( T x T cal ) (4) where dk ILIS(cal) is he curren sense raio measured afer wo-poins calibraion (defined in Equaion (3)), I IS(cal) is he curren sense offse (calculaed afer wo poins calibraion, see Equaion (5)), T x is he operaing emperaure, and T cal is emperaure a which he calibraion is performed (25 C). The Equaion (4) acually provides wo values for load curren, considering ha Δ(dk ILIS(cal) ) can be boh posiive and negaive (see parameer in Table 6 ). I IS(cal) I I Lcal ( )1 Scal ( ) dk ILIS( cal) = = I Scal I Lcal ( )2 ( ) dk ILIS( cal) (5) I IS 8% 1 dk ILIS(cal) 8% I IS(cal)2 I IS I IS(cal)1 I IS(cal) I L I L(cal)1 I L(cal)2 I L Calibraion poins Figure 25 Improved Curren Sense Accuracy afer 2-Poin Calibraion Daa Shee 26 Rev. 1.3,

27 Funcional Descripion SENSE Signal Timing Figure 26 shows he iming during seling and disabling of he sense. V IN OF F < IN (RESETDELAY) OF F > IN (RESETDELAY) Shor / Overemp. V OUT I IS I IS(faul) lach no rese rese I IS V IN V IN I L 9% of IL saic ON Shor circui V OUT V OUT 3V I IS 9% of I S saic pis (ON)_9 sis(on) sis(on)_j I IS I IS (faul ) I IS pis(fau LT) Figure 26 Faul Acknowledgemen SENSE Signal in Case of Shor Circui o V S In case of a shor circui beween OUT and VS pin, a major par of he load curren will flow hrough he shor circui. As a resul, a lower curren compared o he nominal operaion will flow hrough he DMOS of he BTS515-1TAA, which can be recognized a he curren sense signal SENSE Signal in Case of Over Load An over load condiion is defined by a curren flowing ou of he DMOS reaching he curren over load I CL or he juncion emperaure reaches he hermal shudown emperaure T J(TRIP). Please refer o Chaper for deails. In ha case, he SENSE signal will be in he range of I IS(FAULT) when he IN pin says HIGH. This is a device wih lach funcion. The sae of he device will remain and he sense signal will remain on I IS(FAULT) unil a rese signal comes from he IN pin. For example, when a hermal shudown happened, even he over emperaure condiion was disappeared, he DMOS can only be reacivaed when a rese signal is send o he IN pin. Daa Shee 27 Rev. 1.3,

28 Elecrical characerisics BTS515-1TAA 6 Elecrical characerisics BTS515-1TAA 6.1 Elecrical Characerisics Table Table 6 Elecrical Characerisics: BTS515-1TAA V S = 8 V o 18 V, T j = -4 C o +15 C (unless oherwise specified) For a given emperaure or volage range, ypical values are specified a V S = 13.5V, T J = 25 C Parameer Symbol Values Uni Noe / Number Min. Typ. Max. Tes Condiion Operaing and Sandby Currens Operaing curren (channel acive) I GND ma V IN 2.2V Sandby curren for whole device wih load a ambien Maximum sandby curren for whole device wih load a max juncion Power Sage ON sae resisance in forward condiion ON sae resisance in forward condiion, Low baery volage ON sae resisance in forward condiion ON sae resisance in inverse condiion ON sae resisance in inverse condiion I S(OFF) 7 18 μa 1) V S = 18V V OUT = V V IN.8V T J 85 C See Figure 27 See Figure 28 I S(OFF) 3 1 μa V S = 18V V OUT = V V IN.8V T J 15 C See Figure 27 See Figure 28 R DS(ON) mω I L = 135A V IN 2.2V T J = 15 C See Figure 31 R DS(ON) 5 1 mω I L = 2A V IN 2.2V V S = 5.5V T J = 15 C See Figure 33 R DS(ON) 1.5 mω 1) I L = 135A V IN 2.2V T J = 25 C See Figure 31 R DS(ON)_INV mω I L = -135A V IN 2.2V T J = 15 C See Figure 11 R DS(ON)_INV 1.5 mω 1) I L = -135A V IN 2.2V T J = 25 C See Figure Daa Shee 28 Rev. 1.3,

29 Elecrical characerisics BTS515-1TAA Table 6 Nominal load curren I L(NOM) A T A = 85 C 2) T J 15 C Drain o source clamp volage V DS(CL) 28 6 V I DS = 5mA V DS(CL) = V S - V OUT See Figure 39 Oupu leakage curren a ambien Oupu leakage curren a max juncion emperaure Elecrical Characerisics: BTS515-1TAA (con d) V S = 8 V o 18 V, T j = -4 C o +15 C (unless oherwise specified) For a given emperaure or volage range, ypical values are specified a V S = 13.5V, T J = 25 C Parameer Symbol Values Uni Noe / Min. Typ. Max. Tes Condiion I L(OFF) 3 15 μa 1) V IN.8V V OUT = V T J 85 C I L(OFF) 3 1 μa V IN.8V V OUT = V T J = 15 C dv/d V/μs R =.5Ω Turn ON Slew rae V OUT = 25% o 5% V S Turn OFF Slew rae V OUT = 5% o 25% V S ON -dv/d OFF V/μs L V S = 13.5V See Figure 6 See Figure See Figure 34 Turn ON ime o ON 22 7 μs See Figure 35 V OUT = 9% V S See Figure 36 Turn OFF ime o OFF 3 7 μs V OUT = 1% V S Turn ON ime o ON_delay 8 15 μs V OUT = 1% V S Turn OFF ime o OFF_delay 23 5 μs V OUT = 9% V S Swich ON energy E ON 7 mj 1) R L =.5Ω V S = 13.5V See Figure Swich OFF energy E OFF 5 mj 1) R L =.5Ω V S = 13.5V See Figure 38 Number Daa Shee 29 Rev. 1.3,

30 Elecrical characerisics BTS515-1TAA Table 6 Inpu Pin LOW level inpu volage V IN(L).8 V See Figure HIGH level inpu volage V IN(H) 2.2 V See Figure Inpu volage hyseresis V IN(HYS) 2 mv 1) LOW level inpu curren I IN(L) 8 μa V IN =.8V HIGH level inpu curren I IN(H) 8 μa V IN 2.2V Proecion: Loss of ground Oupu leakage curren while module GND disconneced Oupu leakage curren while device GND disconneced Proecion: Reverse polariy ON sae resisance in Infineon Reversave ON sae resisance in Infineon Reversave Elecrical Characerisics: BTS515-1TAA (con d) V S = 8 V o 18 V, T j = -4 C o +15 C (unless oherwise specified) For a given emperaure or volage range, ypical values are specified a V S = 13.5V, T J = 25 C Parameer Symbol Values Uni Noe / Min. Typ. Max. Tes Condiion I OUT(GND_M) 3 1 μa 1)3) V S = 18V V OUT = V IS & IN pins open GND pin open T J = 15 C See Figure 16 I OUT(GND) 3 1 μa V S = 18V GND pin open V IN 2.2V 1kΩ pull down from IS o GND 4.7kΩ o IN pin T J = 15 C See Figure 16 See Figure 43 R DS(ON)_REV 3.2 mω V S = V V GND =V IN =16V I L = -2A T J = 15 C See Figure 21 R DS(ON)_REV 1.5 mω 1) V S = V V GND =V IN =16V I L = -2A T J = 25 C See Figure 46 Number Inegraed resisor R VS 6 9 Ω T J = 25 C Daa Shee 3 Rev. 1.3,

31 Elecrical characerisics BTS515-1TAA V V See Figure 2 V V GND and IN pin Table 6 Elecrical Characerisics: BTS515-1TAA (con d) V S = 8 V o 18 V, T j = -4 C o +15 C (unless oherwise specified) For a given emperaure or volage range, ypical values are specified a V S = 13.5V, T J = 25 C Parameer Symbol Values Uni Noe / Number Min. Typ. Max. Tes Condiion Proecion: Overvolage Overvolage proecion GND pin o V S S(AZ)_GND See Figure 4 Overvolage proecion IS pin o V S S(AZ)_IS open See Figure 2 See Figure 4 Proecion: Overload Curren rip deecion level I CL() A V S = 13.5V, saic T J = 15 C See Figure 22 I CL() A V S = 13.5V, saic T J = C See Figure 22 Curren rip maximum level I CL(1) A 1) V S = 13.5V dil/d = 1A/μs See Figure 44 Overload shudown delay OFF(TRIP) 12 μs 1) ime Thermal shudown emperaure T J(TRIP) ) 2 1) C See Figure Thermal shudown hyseresis ΔT J(TRIP) 1 K 1) Diagnosic Funcion: Sense pin Sense signal curren in faul condiion I IS(FAULT) ma V IN = 4.5V V S - V IS 5V Diagnosic Funcion: Curren sense raio signal in he nominal area, sable curren load condiion Curren sense differenial raio Curren sense I L = I L = 5mA Curren sense I L = I L1 = 2A Curren sense I L = I L2 = 4A dk ILIS I L4 = 135A I L1 = 2A See Equaion (2) I IS 1 2 μa V IN 2.2V V S - V IS 5V T J = -4 C See Figure μa V IN 2.2V V S - V IS 5V T J 25 C See Figure I IS μa V IN 2.2V V S - V IS 5V I IS μa See Figure Daa Shee 31 Rev. 1.3,

32 Elecrical characerisics BTS515-1TAA Table 6 Elecrical Characerisics: BTS515-1TAA (con d) V S = 8 V o 18 V, T j = -4 C o +15 C (unless oherwise specified) For a given emperaure or volage range, ypical values are specified a V S = 13.5V, T J = 25 C Parameer Symbol Values Uni Noe / Min. Typ. Max. Tes Condiion Curren sense I L = I L3 = 8A Curren sense I L = I L4 = 135A Curren sense raio spread over emperaure and repeiive pulse operaion lafer 2-poins calibraion I IS ma V IN 2.2V V S - V IS 5V I IS ma See Figure Δ(dk ILIS(cal) ) ±8 % 1) See Figure Temperaure coefficien for α IS 3.8 /K I IS(cal) Diagnosic Funcion: Diagnosic iming in normal condiion Curren sense propagaion ime unil 9% of I IS sable afer posiive inpu slope on IN pin Curren sense seling ime o I IS sable afer posiive inpu slope on IN pin I IS leakage curren when IN disabled Curren sense propagaion ime afer load jump during ON condiion 1) see Equaion (4) and Equaion (5) pis(on)_9 7 μs V IN 2.2V V S = 13.5V R L =.5Ω See Figure 26 sis(on) 3 μs V IN 2.2V V S = 13.5V R L =.5Ω See Figure 26 I IS(OFF).5 1 μa V IN.8V R IS =1kΩ sis(on)_j 35 μs Diagnosic Funcion: Diagnosic iming in overload condiion Curren sense propagaion ime for shor circui deecion pis(fault) 1 μs Delay ime o rese faul signal a IS pin afer urning OFF V IN Timing: Inverse Behavior Propagaion ime from V OUT > V S o faul disable Propagaion ime from V OUT < V S o faul enable IN(RESETDELAY) μs p,inv,nofault 4 μs p,noinv,fault 1 μs 1) V IN 2.2V di L /d =.4A/μs 1) V IN 2.2V from V OUT = V S -3V o I IS(FAULT)_min See Figure 26 1) ) See Figure ) See Figure ) No subjec o producion es, specified by design 2) Value is calculaed from he parameers yp. R hja(2s2p), wih 65K emperaure increase, yp. and max. R DS(ON) 3) All pins are disconneced excep V S and OUT Number Daa Shee 32 Rev. 1.3,

33 Elecrical characerisics BTS515-1TAA 6.2 General Produc Characerisics Typical Performance Characerisics Figure 27 Sandby Curren for Whole Device wih Load, I S(OFF) = f(v S, T J ) Figure 28 Sandby Curren for Whole Device wih Load, I S(OFF) = f(t J ) a V S = 13.5V IS(OFF) [µa] C C 25 C 85 C 1 C 125 C 15 C I S(OFF) [µa] V S [V] T J [ o C] Figure 29 GND Leakage Curren I GND(OFF) = f(v S, T J ) Figure 3 GND Leakage Curren I GND(OFF) = f(t J ) a V S = 13.5V [µa] I GND(OFF) C C 1 25 C 85 C.5 1 C 125 C 15 C V S [V] IGND(OFF) [µa] T J [ o C] Daa Shee 33 Rev. 1.3,

34 Elecrical characerisics BTS515-1TAA Figure 31 ON Sae Resisance R DS(ON) = f(v S, T J ), I L = 2A A Figure 32 ON Sae Resisance R DS(ON) = f(t J ),V S = 13.5V,I L = 2A...135A C 4 25 C 15 C RDS(ON) [mω] R DS(ON) [mω] V S [V] T J [ C] Figure 33 Turn ON Time ON = f(v S, T J ), R L =.5Ω Figure 34 Turn OFF Time OFF = f(v S, T J ), R L =.5Ω C 25 C 15 C C 25 C 15 C ON [µs] 6 OFF [µs] V S [V] V S [V] Daa Shee 34 Rev. 1.3,

35 Elecrical characerisics BTS515-1TAA Figure 35 Slew Rae a Turn ON dv / ON = f(v S, T J ), R L =.5Ω Figure 36 Slew Rae a Turn OFF dv / OFF = f(v S, T J ), R L =.5Ω C 25 C 15 C C 25 C 15 C.6.6 dv/d ON [V/µs] dv/d OFF [V/µs] V S [V] V S [V] Figure 37 Swich ON Energy E ON = f(v S, T J ), R L =.5Ω Figure 38 Swich OFF Energy E OFF = f(v S, T J ), R L =.5Ω C 25 C 15 C C 25 C 15 C E ON [mj] 2 15 E OFF [mj] V S [V] V S [V] Daa Shee 35 Rev. 1.3,

36 Elecrical characerisics BTS515-1TAA Figure 39 Drain o Source Clamp Volage V DS(CL) = f(t J ), I L = 5mA Figure 4 Overvolage Proecion V S(AZ)_GND = f(t J ), V S(AZ)_IS = f(t J ) V DS(CL) [V] V S(AZ)_GND, V S(AZ)_IS [V] T J [ C] T J [ C] Figure 41 LOW Level Inpu Volage V IN(L) = f(v S, T J ) Figure 42 HIGH Level Inpu Volage V IN(H) = f(v S, T J ) V IN(L) [V] 1.8 VIN(H) [V] C 25 C 15 C C 25 C 15 C V S [V] V S [V] Daa Shee 36 Rev. 1.3,

37 Elecrical characerisics BTS515-1TAA Figure 43 Oupu Leakage Curren while Device GND Disconneced, I OUT(GND) = f(v S, T J ) Figure 44 Overload Deecion Curren I CL(1) = f(di L /d, T J ), V S = 13.5V C 25 C 15 C 35 3 IOUT(GND) [µa] 15 1 ICL(1) [A] C 25 C 15 C V S [V] di L/d [A/µs] Figure 45 Resisance in Reversave R DS(ON)_REV = f(v S, T J ), I L = -12A Figure 46 Resisance in Reversave R DS(ON)_REV = f(v S, T J ), I L = -2A C 25 C 15 C C 25 C 15 C RDS(ON)_REV [mω] RDS(ON)_REV [mω] VS [V] V S [V] Daa Shee 37 Rev. 1.3,

38 Elecrical characerisics BTS515-1TAA Figure 47 Inpu Curren I IN = f(t J ) V S = 13.5V; V IN(L) =.8V; V IN(H) = 5.V Figure 48 Inpu Curren I IN = f(v IN, T J ) V S =13.5V IIN(L) IIN(H) IIN [µa] 3 IIN [µa] C 25 C 15 C T J [ C] V IN [V] Figure 49 GND curren I GND = f(v S, T J ) V IN = 2.2V I GND [ma] C 25 C 15 C V S [V] Daa Shee 38 Rev. 1.3,

39 Package Oulines 7 Package Oulines (15) ±.2 1 ±.3 1 ± ) ) A ± ±.1 B ± ± x.6 ±.1.5 ±.1 6 x M A B 8 MAX..1 B 1) Typical Meal surface min. X = 7.25, Y = 6.9 All meal surfaces in plaed, excep area of cu. GPT963 Dimensions in mm Figure 5 PG-TO (RoHS-Complian) Green Produc (RoHS complian) To mee he world-wide cusomer requiremens for environmenally friendly producs and o be complian wih governmen regulaions he device is available as a green produc. Green producs are RoHS-Complian (i.e Pb-free finish on leads and suiable for Pb-free soldering according o IPC/JEDEC J-STD-2). For furher informaion on alernaive packages, please visi our websie: hp:// Daa Shee 39 Rev. 1.3,

40 Applicaion Informaion 8 Applicaion Informaion Noe: The following informaion is given as a hin for he implemenaion of he device only and shall no be regarded as a descripion or warrany of a cerain funcionaliy, condiion or qualiy of he device. VBAT R/L supply V DD CVS1 CVS2 Vdd_p OUT IN Vs Module ground R IN XC2x (P11_MR) C IN Za Zb OUT R ECU L ECU Rcable P5.x (A/D) RSENSE IS GND C OUT CSENSE R IS Lcable Vss Load Module ground Figure 51 Applicaion Diagram wih BTS515-1TAA Noe: This is a very simplified example of an applicaion circui. The funcion mus be verified in he real applicaion. Noe: This applicaion circui is valid only if he device does no ener he clamping mode, oherwise he recommendaion in Figure 52 are valid. Table 7 Bill of maerial Reference Value Purpose R IN 4.7kΩ Proecion of he microconroller during overvolage, reverse polariy allows BTS515-1TAA channels OFF during loss of ground R IS 1kΩ Sense resisor R SENSE 4.7kΩ Proecion of he microconroller during overvolage Proecion of he BTS515-1TAA during reverse polariy Z a Zener diode Proecion of he BTS515-1TAA during loss of load wih primary charged inducance, see Chaper Z b Zener diode Proecion of he BTS515-1TAA during loss of baery or agains huge negaive pulse a OUT (like ISO pulse 1), see Chaper C SENSE 1nF Sense signal filering C VS1 1nF Improved EMC behavior (in layou, pls. place close o he pins) Daa Shee 4 Rev. 1.3,

41 Applicaion Informaion Table 7 Bill of maerial Reference Value Purpose C VS2 1μF o 22μF Suppression of ransien over volages exceeding C OUT 1nF Improved EMC behavior (in layou, pls. place close o he pins) C IN 15nF BTS515-1TAA ends o lached swich-off due o shor negaive ransiens on supply pin; C IN auomaically reses he device VBAT R/L supply VDD CVS1 C VS2 Vdd_p OUT IN Vs Module ground Opions for free wheeling pah of inducive load RIN Za Opion A Opion B XC2x (P11_MR) C IN Zb OUT Z1 Z1 R/L cable P5.x (A/D) RSENSE IS GND C OUT Z2 CSENSE RIS T1 inducive load Vss Opional: MOSFET o block reverse curren G D S Module ground Figure 52 Applicaion Diagram wih BTS515-1TAA Noe: This is a very simplified example of an applicaion circui. The funcion mus be verified in he real applicaion. Noe: This applicaion circui is valid also every ime he device eners he clamping mode, alhough i is no driving a pure inducive load. Table 8 Bill of maerial Reference Value Purpose R IN 4.7kΩ Proecion of he microconroller during overvolage, reverse polariy allows BTS515-1TAA channels OFF during loss of ground R IS 1kΩ Sense resisor R SENSE 4.7kΩ Proecion of he microconroller during overvolage Proecion of he BTS515-1TAA during reverse polariy Z a Zener diode Proecion of he BTS515-1TAA during loss of load wih primary charged inducance, see Chaper Daa Shee 41 Rev. 1.3,

42 Applicaion Informaion Table 8 Bill of maerial Reference Value Purpose Z b Zener diode Proecion of he BTS515-1TAA during loss of baery or agains negaive huge pulses a OUT (like ISO pulse 1), see Chaper Z1 Z2 Schoky diode Zener Transien Suppressor Proecion of he BTS515-1TAA when driving an inducive load. Z2 is added in opion A o demagneize more quickly he inducance associaed wih he cable. Only one of he wo possible opions A and B should be implemened T1 n-channel MOSFET Opional. I can be added o block reverse curren in proecion diodes. C SENSE 1nF Sense signal filering C VS1 1nF Improved EMC behavior (in layou, pls. place close o he pins) C VS2 1μF o 22μF Suppression of ransien over volages exceeding C OUT 1nF Improved EMC behavior (in layou, pls. place close o he pins) C IN 15nF BTS515-1TAA ends o lached swich-off due o shor negaive ransiens on supply pin; C IN auomaically reses he device Daa Shee 42 Rev. 1.3,

43 Applicaion Informaion 8.1 Furher Applicaion Informaion Please conac us for informaion regarding he pin FMEA For furher informaion you may conac hp:// Daa Shee 43 Rev. 1.3,

44 Revision Hisory 9 Revision Hisory Revision Dae Changes Chaper 1, secion Applicaion slighly modified Table 1, symbol Δk ILIS changed ino dk ILIS Page 4, Embedded Proecion Funcions slighly changed Figure 1 slighly changed Table 2 on Page 8, min value of he parameer under condiion 2min added Table 2 on page 1, parameer removed Figure 5 (Maximum Energy dissipaion for inducive swich OFF, E A vs Load Curren) removed Table 3 on Page 11, absolue value added a parameer Table 3 on Page 11, parameer added Table 4 on Page 12, foonoe 2 and 3 slighly modified Chaper modified and Noe removed Chapers and removed Chaper modified Figure 8 slighly modified Figure 8, capion modified Figure 9 added Figure 1 (old) removed Figure 1 added Figure 15 slighly modified Figure 16 slighly modified Chaper slighly changed Chaper modified Figure 2 slighly modified Figure 21 slighly modified Chaper a senence added Figure 23 slighly modified Table 5 on Page 24, diagnosic oupu of Normal Operaion, Overcurren Condiion and Shor Circui o VS modified Equaion 3 replaced by Equaion (1) Equaion 4 replaced by Equaion (2) Figure 24 changed Chaper modified Former Equaion (5) removed Equaion (3) added Equaion (5) added Former Equaion (6) replaced wih Equaion (4) Figure 25 changed Table 6 on Page 28, parameer 6.1.2, foonoe added Table 6 parameer , descripion changed from Curren Sense Raio o Curren Sense Differenial Raio Table 6, parameer , symbol modified Table 6, parameer , one row added, differeniaing he parameer according o he emperaure range Table 6, parameer , min value added Table 6, parameer , max value modified Table 6, parameer , min value modified Daa Shee 44 Rev. 1.3,

45 Revision Hisory Revision Dae Changes Table 6, parameer , max value modified Table 6, parameer , min value modified Table 6, parameer , yp value modified Table 6, parameer , max value modified Table 6, parameer , min value modified Table 6, parameer , max value modified Table 6, parameer , parameer descripion modified Table 6, parameer , parameer symbol changed Table 6, parameer , ± symbol added before he yp value Table 6, parameer , parameer descripion modified Table 6, parameer , parameer symbol modified Table 6, parameer , yp value changed Table 6, parameer , parameer uni changed Noe added below Figure 8 in Noe added below Figure 51in Chaper 8 Noe added below Figure 52in Chaper 8 Daa Shee 45 Rev. 1.3,