Silicon Photonics Opportunity, Applicatoins & Recent Results. Mario Paniccia, Director Photonics Technology Lab Intel Corporation

Size: px
Start display at page:

Download "Silicon Photonics Opportunity, Applicatoins & Recent Results. Mario Paniccia, Director Photonics Technology Lab Intel Corporation"

Transcription

1 Silicon Photonics Opportunity, Applicatoins & Recent Results Mario Paniccia, Director Photonics Technology Lab Intel Corporation Intel Corporation CREOL April

2 Agenda Opportunity for Silicon Photonics Copper vs optical Recent advances Intels SP Research Recent results Intel s s Silicon Laser Summary *Third party marks and brands are the property of their respective owner 2

3 ELECTRONICS: Moore s Law Scaling MIPS Pentium 4 Processor Pentium III Processor Pentium II Processor $/MIPS Pentium Pro Processor Pentium Processor Intel486 TM DX CPU Intel386 TM DX Microprocessor Microprocessor MIPS $/MIPS Integration & increased functionality Volume economics faster, better, cheaper *Third party marks and brands are the property of their respective owner 3

4 The Opportunity of Silicon Photonics Take advantage of enormous ($ billions) CMOS infrastructure, process learning, and capacity Available tools: litho requirements typically >90nm Draft continued investment going forward Potential to integrate multiple optical devices Micromachining could provide smart packaging Potential to converge computing & communications Industry standard silicon manufacturing processes could enable integration, bring volume economics to to optical. To benefit from existing infrastructure optical wafers must run alongside product.. i.e CMOS fabrication compatible.. *Third party marks and brands are the property of their respective owner 4

5 Today's High Speed Interconnects Metro & Long Haul km Primarily Optical Rack to Rack 1 to 100 m Primarily Copper Board to Board cm Chip to Chip 1 50 cm Billions Millions Volumes Thousands Decreasing Distances Need to drive volume economics to drive optical closer to chip *Third party marks and brands are the property of their respective owner 5

6 Copper Approaching Limits Simulation of 20 channel transmitter w/ equalization 0 Channel Attenuation [db] G 18G Standard FR Low Loss Ro Red Zone = Eye Closes Data Rate [Gb/s] Howard Heck Copper scaling more challenging. Headroom getting squeezed. *Third party marks and brands are the property of their respective owner 6

7 Electrical to Optical Enterprise Distance: km 10km Rack-Rack Distance: 1-100m100m 10G Silicon Photonics? >= 40G 3.125G 10G 40G OPTICAL Board-Board Distance: cm Chip-Chip Distance: 1-50cm 3.125G 5-6G5 ELECTRICAL 3.125G 5-6G5 10G Copper Tech Optical Tech 20G Transition Zone 10G 15-20G 2005 Transition driven by cost *Third party marks and brands are the property of their respective owner 7

8 The Photonic Dilemma Fiber has much more bandwidth than copper However, it is much more expensive.. *Third party marks and brands are the property of their respective owner 8

9 Photonics: The technology of emission, transmission, control and detection of light (photons) aka fiber- optics & opto-electronics Today: Most photonic devices made with exotic materials, expensive processing, complex packaging Silicon Photonics Vision: Research effort to develop photonic devices using silicon as base material and do this using standard, high volume silicon manufacturing techniques in existing fabs Benefit: Bring volume economics to optical communications *Third party marks and brands are the property of their respective owner 9

10 Agenda Opportunity for Silicon Photonics Copper vs optical Recent advances Intels SP Research Recent results Intel s s Silicon Laser** Summary *Third party marks and brands are the property of their respective owner 10

11 Silicon Pro s s and Cons + Transparent in µm m region + CMOS fabrication compatibility + Low cost + High-index index contrast small footprint No electro-optic optic effect No detection in µm m region High index contrast coupling Lacks efficient light emission Silicon will not win with passive devices.. Must produce active devices that add functionality *Third party marks and brands are the property of their respective owner 11

12 Silicon Photonics Breakthroughs Are Accelerating Low Loss Strip MIT 2001 SRS UCLA Si LEDs STM, Trento Integrated APD+TIA UT Inverted Taper NTT, Cornel 2002 Raman λ Conversion Modeled GHz PIN Modulator Surrey, Naples PBG WG <25dB/cm IBM UCLA 2003 Raman Net Pulsed Gain 9/6: Intel 9/20: Cornell 9/29: UCLA 9/29: CUHK 30GHz SiGe Photodetector GHz MOS Modulator 2004 Intel IBM PBG WG <7dB/cm IBM, FESTA, NTT CW Raman lasing Feb 05 Progress In Recent Years Is Accelerating still not there *Third party marks and brands are the property of their respective owner 12

13 Agenda Opportunity for Silicon Photonics Copper vs optical Recent advances Intel s s SP Research Recent results Intel s s Silicon Laser** Summary *Third party marks and brands are the property of their respective owner 13

14 Intel s s Silicon Photonics Research 1. Develop photonic building blocks in silicon 1) Light Source 2) Guide Light 3) Modulation Waveguides devices First Continuous Silicon Laser (Nature 2/17/05) 4) Photo-detection 5) Low Cost Assembly Passive Align 6) Intelligence CMOS 1GHz (Nature 04) 1GHz 4 Gb/s ( 05) SiGe Photodetectors Mirror First Prove that silicon is viable material for photonics *Third party marks and brands are the property of their respective owner 14

15 Packaging Approximate Optical Product Cost Breakdown Packaging 1/3 Device 1/3 Testing 1/3 In addition to device costs, packaging and testing costs must drop with to enable high volume photonics *Third party marks and brands are the property of their respective owner 15

16 Micromachining for Packaging U-Grooves Use standard pick and place technologies along with litho defined silicon micro-machining machining Tapers Mirror V-Grooves Laser Attach 45 Mirrors Facet Preparation *Third party marks and brands are the property of their respective owner 16

17 Intel s s Silicon Photonics Research 1. Develop photonic building blocks in silicon 2. Integrate increasing functionality directly onto silicon Integrated in Silicon Photodetectors DEMUX Receiver Chip Taper Driver Chip Passive Align Lasers MUX *Third party marks and brands are the property of their respective owner 17

18 Intel s s Silicon Photonics Research 1. Develop photonic building blocks in silicon 2. Integrate increasing functionality directly onto silicon 3. Long term explore monolithic integration Filter ECL Drivers Modulator Multiple Channels CMOS Circuitry TIA TIA Passive Alignment Photodetector *Third party marks and brands are the property of their respective owner 18

19 SILICON LASER What we announced on Feb 17 th th *Third party marks and brands are the property of their respective owner 19

20 The First Laser Developed by Ted Maiman, published in Nature,, August 6, this ruby laser used a flash lamp as an optical pump Fully Reflective Mirror Flash Lamp Partially Reflective Mirror RUBY CRYSTAL ROD LASER BEAM *Third party marks and brands are the property of their respective owner 20

21 Raman: (Historical Note) Raman Effect or Raman Scattering: A phenomenon observed in the scattering of light as it passes through a transparent medium; the light undergoes a change in frequency and random alteration in phase due to a change in rotational or vibrational energy of the scattering molecules. Discovered a material effect that is named after him Nature published his paper on the effect on March 31, 1928 He received the Nobel prize in 1930 for his discovery The first laser using the Raman effect was built in 1962 Today Raman based amplifiers are used throughout telecom Most long distance phone calls will go through a Raman amplifier Typical Raman Amplifier *Third party marks and brands are the property of their respective owner 21

22 Silicon Indium Antimonide (III-V) Quartz Lithium Niobate (used for modulators) Diamond Glass Fiber (Raman lasers/amps) The Raman Effect Materials Raman gain coefficient (10-8 m/mw) Kilometers of fiber... The Raman effect is 10,000 times stronger in silicon than in glass fiber Centimeters of silicon This allows for significant gain in centimeters instead of kilometers Fabrication of low-loss silicon waveguides is challenging *Third party marks and brands are the property of their respective owner 22

23 Raman Gain in Silicon Silicon Waveguide Pump in Pump out Pump/probe experiment Probe in Probe out Raman Gain and WG loss vs. Input Pump Power -0.2 Raman gain (db) Input pump power(mw) (b) Raman Gain/WG Loss (db) Pump Power (mw) Gain-Loss (db) Raman Gain WG Loss Loss w/o Pump Gain-Loss CW Gain Saturation due to TPA induced FCA *Third party marks and brands are the property of their respective owner 23

24 Two Photon Absorption In silicon, one infrared photon doesn't have the energy to free an electron e e e e e e e e Free Electron e SILICON WAVEGUIDE But, occasionally, two photons can knock an electron out of orbit. Free electrons absorb individual photons and cancel Raman gain *Third party marks and brands are the property of their respective owner 24

25 Overcoming TPA induced FCA V + laser beam Raman Gain Gain needed to make a laser oxide p-type silicon electrons Gain limit due to Two Photon Absorption problem intrinsic silicon n-type silicon Pump power *Third party marks and brands are the property of their respective owner 25

26 Effective Carrier lifetime reduction SiO 2 passivation Al contact Si rib waveguide p-region Buried oxide H W h Al contact n-region Output power (mw) Lifetime=16 ns Lifetime=6.8 ns Lifetime=3.2 ns Lifetime=1 ns 25 V 5 V short open Si substrate PIN Cross-section *Third party marks and brands are the property of their respective owner Input power (mw) TPA coeff ~ 0.5 cm/gw, α 0.39 db/cm, FCA cross sect 1.45e nm. The lifetime is used as a fitting parameter

27 CW gain vs. reverse bias voltage WG= ~1.5um by 1.5um NET GAIN NO NET GAIN Pump λ=1550 nm Signal λ=1686 nm *Third party marks and brands are the property of their respective owner 27

28 With gain can build Laser: Silicon Waveguide Cavity R f V bias 16 mm n-region R b Pump beam SOI rib waveguide 2 mm Laser output Dichroic coating p-region Broad-band reflective coating 24%/71% 90% *Third party marks and brands are the property of their respective owner 28

29 Experimental setup Pump at 1,550 nm 0-10 Optical spectrum analyzer -80 Pump power monitor 90/10 Tap coupler Laser output power meter Polarization controller LP filter 90/10 Tap coupler Lensed fibre De-multiplexer Laser output at 1,686 nm Silicon waveguide Dichroic coating High reflection coating *Third party marks and brands are the property of their respective owner 29

30 Experimental Set up Test chip with 8 laser WG s Laser chip *Third party marks and brands are the property of their respective owner 30

31 Typical Lasing Criteria Threshold behavior: rapid growth in output power when gain > loss Spectral linewidth narrowing: Coherent light emission *Third party marks and brands are the property of their respective owner 31

32 Threshold, Efficiency, and PIN effect Laser output (mw) V bias 5V bias 25V slope 5V slope Coupled pump power (mw) Laser turns on at threshold, when gain per pass in cavity becomes greater than the loss. *Third party marks and brands are the property of their respective owner 32

33 Spontaneous emission vs. laser spectrum Spectral power (a. u.) Lasing signal Spontaneous emmission Magnified 10^ 5x Wavelength (nm) When lasing, the spectrum becomes much more narrow and much higher in power. *Third party marks and brands are the property of their respective owner 33

34 Wavelength tuning (comparison) 0-10 pump 0-10 Spactral power (db) nm 1550 nm 1552 nm 1554 nm 1556 nm 1558 nm Spactral power (db) nm 1550 nm 1552 nm 1554 nm 1556 nm 1558 nm Laser wavelength (nm) Laser wavelength (nm) Silicon Raman laser Commercial ECDL *Third party marks and brands are the property of their respective owner 34

35 Potential Applications *Third party marks and brands are the property of their respective owner 35

36 Communications Applications PUMP LASER passively aligned Si Raman Amplifier weak data beam waveguide coupler amplified data beam silicon waveguide (cm s) Si Multi-Channel Transmitter laser cavity modulators P passively aligned MOD PUMP LASER MOD MUX N splitter MOD MOD Optical Fiber Si Raman Modulator integrated mirrors *Third party marks and brands are the property of their respective owner 36

37 Covering the Gaps Different wavelengths require different types of lasers Mid-Infrared very difficult for compact semiconductors Raman Lasers could enable lasers at these wavelengths Applications in sensing, analysis, medicine, and others 2.1µm Ho:YAG laser Compact Semi. Lasers PUMP LASER 2.9µm Er:YAG laser cascaded mirrors >2µm Could enable lasers for a variety of applications *Third party marks and brands are the property of their respective owner 37

38 Summary Long term true convergence opportunities are with silicon B/W will continue drive conversion of optical into interconnects Tremendous progress from research community Need to continue pushing & improving performance Research breakthrough with CW silicon laser Integration is next set of challenges In order to benefit Technologies must be CMOS fabrication compatible to benefit from HVM & infrastructure Silicon will not win with individual devices, but with integrated modules that bring increased total functionality & intelligence at a lower cost *Third party marks and brands are the property of their respective owner 38

39 BACKUP *Third party marks and brands are the property of their respective owner 39

40 Photonic Integration: Reduction in interfaces lower loss Reduction in size Simpler assembly, testing, packaging Cost Benefits of Integration Optoelectronic Integration: Reduce parasitics,, improved high-freq performance Further size, testing, packaging reductions? Cost Integration is only useful if integrated device has benefit (functionality, cost, performance) over discrete devices *Third party marks and brands are the property of their respective owner 40

41 CMOS Integration Challenges Film topology Coupling to fiber Contaminating the fab Yield metrology Thermal budgets Heat dissipation Complexity / yield Optoelectronic Integration To benefit from existing infrastructure optical wafers must run alongside product, introducing additional pragmatic challenges *Third party marks and brands are the property of their respective owner 41

42 Surface Topology: Litho vs DOF Depth of focus (DOF) shrinks as litho improves Many optical devices are much taller than transistors For 0.18µm m and better, topology exceeds DOF New planarization techniques required for advanced litho DOF vs. Litho Technology (µm)( µm 0.5 µm µm Transistor on 90nm 0.3µm Strip 0.9µm Rib 8µm Taper 0.1µm gate *Third party marks and brands are the property of their respective owner 42

43 Fiber Coupling Taper from (W x H): 10 x 8 µm m to 2.5 x 2.3 µm Assume zero roughness Taper loss (db) Source: Intel 1dB Sidewall angle (degrees) Tip=0.5 Tip=1.0 Tip=2.0 2dB Coupling from standard fiber to Si waveguides requires special structures (tapers, gratings, etc). For wedge tapers, etch angle as well as the tip lithography impact loss. Sidewall roughness is also a factor Getting light from fibers into silicon waveguides will require couplers. For certain structures litho and etch parameters must be carefully controlled. *Third party marks and brands are the property of their respective owner 43

44 Yield Metrology CMOS fabs monitor thousands of parameters across wafer in line Tight control e.g. CMOS gate width held to 10 s s of angstroms Significant per-wafer cost savings from screening out yield early In-line wafer level optical probing is very immature Most optical device testing is performed after wafer dicing To truly gain from HVM processing, automated & non-destructive techniques for probing optical devices at the wafer level must be developed *Third party marks and brands are the property of their respective owner 44

45 Opto-Electronic Integration (cont) Thermal: For optoelectronic integration, optical devices must tolerate heat generated by CMOS circuits. Process 10Gb/s CMOS IC s need 90nm technology Silicon Photonic devices may only need ~.25um Simulated multi-core thermal map IO Pads Core Core Other Logic Core Core IO Pads Cache Yield: Typical industry IC yields are high, but the process windows are extremely tight. Tweaks to enable opto-electronic integration may effect IC yield Temp C Trade off of yield and process compexity will determine if opto-electrical integration valuable *Third party marks and brands are the property of their respective owner 45

46 Animation Click in box while in slide show mode to start Click outside animation box after animation *Third party marks and brands are the property of their respective owner 46

47 Extending and Expanding Moore s s Law Sensors Mechanical Discrete SSI LSI VLSI Biological EXP A EXTENDING Fluidics Wireless D I N G Optical *Third party marks and brands are the property of their respective owner 47

48 Two Photon Absorption in Silicon Conduction band Pump λ=1.55µm Silicon band gap 1.1 ev Valence band Two photons can simultaneously hit an atom Combined energy enough to kick free an electron *Third party marks and brands are the property of their respective owner 48

Silicon Integrated Photonics

Silicon Integrated Photonics Silicon Integrated Photonics Dr. Mario Paniccia, Director Photonics Technology Lab Intel Corporation IEEE CAS Society May 16, 2005 For More Info http://www.intel.com/technology/silicon/sp/ Intel Corporation

More information

Silicon Photonics Opportunity, applications & Recent Results

Silicon Photonics Opportunity, applications & Recent Results Silicon Photonics Opportunity, applications & Recent Results Dr. Mario Paniccia Intel Fellow Director, Photonics Technology Lab Intel Corporation www.intel.com/go/sp Purdue University Oct 5 2007 Agenda

More information

Silicon Photonics Photo-Detector Announcement. Mario Paniccia Intel Fellow Director, Photonics Technology Lab

Silicon Photonics Photo-Detector Announcement. Mario Paniccia Intel Fellow Director, Photonics Technology Lab Silicon Photonics Photo-Detector Announcement Mario Paniccia Intel Fellow Director, Photonics Technology Lab Agenda Intel s Silicon Photonics Research 40G Modulator Recap 40G Photodetector Announcement

More information

A continuous-wave Raman silicon laser

A continuous-wave Raman silicon laser A continuous-wave Raman silicon laser Haisheng Rong, Richard Jones,.. - Intel Corporation Ultrafast Terahertz nanoelectronics Lab Jae-seok Kim 1 Contents 1. Abstract 2. Background I. Raman scattering II.

More information

Low threshold continuous wave Raman silicon laser

Low threshold continuous wave Raman silicon laser NATURE PHOTONICS, VOL. 1, APRIL, 2007 Low threshold continuous wave Raman silicon laser HAISHENG RONG 1 *, SHENGBO XU 1, YING-HAO KUO 1, VANESSA SIH 1, ODED COHEN 2, OMRI RADAY 2 AND MARIO PANICCIA 1 1:

More information

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI Lecture: Integration of silicon photonics with electronics Prepared by Jean-Marc FEDELI CEA-LETI Context The goal is to give optical functionalities to electronics integrated circuit (EIC) The objectives

More information

Index. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index.

Index. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index. absorption, 69 active tuning, 234 alignment, 394 396 apodization, 164 applications, 7 automated optical probe station, 389 397 avalanche detector, 268 back reflection, 164 band structures, 30 bandwidth

More information

Four wave mixing and parametric amplification in Si-nano waveguides using reverse biased pnjunctions

Four wave mixing and parametric amplification in Si-nano waveguides using reverse biased pnjunctions Four wave mixing and parametric amplification in Si-nano waveguides using reverse biased pnjunctions for carrier removal E-Mail: petermann@tu-berlin.de Acknowledgements A.Gajda 1, G.Winzer 1, L.Zimmermann

More information

Light source approach for silicon photonics transceivers September Fiber to the Chip

Light source approach for silicon photonics transceivers September Fiber to the Chip Light source approach for silicon photonics transceivers September 2014 Fiber to the Chip Silicon Photonics Silicon Photonics Technology: Silicon material system & processing techniques to manufacture

More information

Convergence Challenges of Photonics with Electronics

Convergence Challenges of Photonics with Electronics Convergence Challenges of Photonics with Electronics Edward Palen, Ph.D., P.E. PalenSolutions - Optoelectronic Packaging Consulting www.palensolutions.com palensolutions@earthlink.net 415-850-8166 October

More information

NEXT GENERATION SILICON PHOTONICS FOR COMPUTING AND COMMUNICATION PHILIPPE ABSIL

NEXT GENERATION SILICON PHOTONICS FOR COMPUTING AND COMMUNICATION PHILIPPE ABSIL NEXT GENERATION SILICON PHOTONICS FOR COMPUTING AND COMMUNICATION PHILIPPE ABSIL OUTLINE Introduction Platform Overview Device Library Overview What s Next? Conclusion OUTLINE Introduction Platform Overview

More information

A 3.9 ns 8.9 mw 4 4 Silicon Photonic Switch Hybrid-Integrated with CMOS Driver

A 3.9 ns 8.9 mw 4 4 Silicon Photonic Switch Hybrid-Integrated with CMOS Driver A 3.9 ns 8.9 mw 4 4 Silicon Photonic Switch Hybrid-Integrated with CMOS Driver A. Rylyakov, C. Schow, B. Lee, W. Green, J. Van Campenhout, M. Yang, F. Doany, S. Assefa, C. Jahnes, J. Kash, Y. Vlasov IBM

More information

Electronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions

Electronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions Electronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions Christoph Theiss, Director Packaging Christoph.Theiss@sicoya.com 1 SEMICON Europe 2016, October 27 2016 Sicoya Overview Spin-off from

More information

Microphotonics Readiness for Commercial CMOS Manufacturing. Marco Romagnoli

Microphotonics Readiness for Commercial CMOS Manufacturing. Marco Romagnoli Microphotonics Readiness for Commercial CMOS Manufacturing Marco Romagnoli MicroPhotonics Consortium meeting MIT, Cambridge October 15 th, 2012 Passive optical structures based on SOI technology Building

More information

Si CMOS Technical Working Group

Si CMOS Technical Working Group Si CMOS Technical Working Group CTR, Spring 2008 meeting Markets Interconnects TWG Breakouts Reception TWG reports Si CMOS: photonic integration E-P synergy - Integration - Standardization - Cross-market

More information

Silicon Photonics: A Platform for Integration, Wafer Level Assembly and Packaging

Silicon Photonics: A Platform for Integration, Wafer Level Assembly and Packaging Silicon Photonics: A Platform for Integration, Wafer Level Assembly and Packaging M. Asghari Kotura Inc April 27 Contents: Who is Kotura Choice of waveguide technology Challenges and merits of Si photonics

More information

Optical Amplifiers Photonics and Integrated Optics (ELEC-E3240) Zhipei Sun Photonics Group Department of Micro- and Nanosciences Aalto University

Optical Amplifiers Photonics and Integrated Optics (ELEC-E3240) Zhipei Sun Photonics Group Department of Micro- and Nanosciences Aalto University Photonics Group Department of Micro- and Nanosciences Aalto University Optical Amplifiers Photonics and Integrated Optics (ELEC-E3240) Zhipei Sun Last Lecture Topics Course introduction Ray optics & optical

More information

Optodevice Data Book ODE I. Rev.9 Mar Opnext Japan, Inc.

Optodevice Data Book ODE I. Rev.9 Mar Opnext Japan, Inc. Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Section 1 Operating Principles 1.1 Operating Principles of Laser Diodes (LDs) and Infrared Emitting Diodes (IREDs) 1.1.1 Emitting Principles

More information

CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER

CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER As we discussed in chapter 1, silicon photonics has received much attention in the last decade. The main reason is

More information

Introduction Fundamentals of laser Types of lasers Semiconductor lasers

Introduction Fundamentals of laser Types of lasers Semiconductor lasers ECE 5368 Introduction Fundamentals of laser Types of lasers Semiconductor lasers Introduction Fundamentals of laser Types of lasers Semiconductor lasers How many types of lasers? Many many depending on

More information

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2010 Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2010 Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 2010 Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging Christophe Kopp, St ephane Bernab e, Badhise Ben Bakir,

More information

High-speed Ge photodetector monolithically integrated with large cross silicon-on-insulator waveguide

High-speed Ge photodetector monolithically integrated with large cross silicon-on-insulator waveguide [ APPLIED PHYSICS LETTERS ] High-speed Ge photodetector monolithically integrated with large cross silicon-on-insulator waveguide Dazeng Feng, Shirong Liao, Roshanak Shafiiha. etc Contents 1. Introduction

More information

Lecture 6 Fiber Optical Communication Lecture 6, Slide 1

Lecture 6 Fiber Optical Communication Lecture 6, Slide 1 Lecture 6 Optical transmitters Photon processes in light matter interaction Lasers Lasing conditions The rate equations CW operation Modulation response Noise Light emitting diodes (LED) Power Modulation

More information

Trends in Optical Transceivers:

Trends in Optical Transceivers: Trends in Optical Transceivers: Light sources for premises networks Peter Ronco Corning Optical Fiber Asst. Product Line Manager Premises Fibers January 24, 2006 Outline: Introduction: Transceivers and

More information

Silicon-On-Insulator based guided wave optical clock distribution

Silicon-On-Insulator based guided wave optical clock distribution Silicon-On-Insulator based guided wave optical clock distribution K. E. Moselund, P. Dainesi, and A. M. Ionescu Electronics Laboratory Swiss Federal Institute of Technology People and funding EPFL Project

More information

Integration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication

Integration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication Integration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication Zhaoran (Rena) Huang Assistant Professor Department of Electrical, Computer and System Engineering

More information

Silicon photonics with low loss and small polarization dependency. Timo Aalto VTT Technical Research Centre of Finland

Silicon photonics with low loss and small polarization dependency. Timo Aalto VTT Technical Research Centre of Finland Silicon photonics with low loss and small polarization dependency Timo Aalto VTT Technical Research Centre of Finland EPIC workshop in Tokyo, 9 th November 2017 VTT Technical Research Center of Finland

More information

Integrated Photonics using the POET Optical InterposerTM Platform

Integrated Photonics using the POET Optical InterposerTM Platform Integrated Photonics using the POET Optical InterposerTM Platform Dr. Suresh Venkatesan CIOE Conference Shenzhen, China Sept. 5, 2018 POET Technologies Inc. TSXV: PUBLIC POET PTK.V Technologies Inc. PUBLIC

More information

Optical Amplifiers. Continued. Photonic Network By Dr. M H Zaidi

Optical Amplifiers. Continued. Photonic Network By Dr. M H Zaidi Optical Amplifiers Continued EDFA Multi Stage Designs 1st Active Stage Co-pumped 2nd Active Stage Counter-pumped Input Signal Er 3+ Doped Fiber Er 3+ Doped Fiber Output Signal Optical Isolator Optical

More information

IBM T. J. Watson Research Center IBM Corporation

IBM T. J. Watson Research Center IBM Corporation Broadband Silicon Photonic Switch Integrated with CMOS Drive Electronics B. G. Lee, J. Van Campenhout, A. V. Rylyakov, C. L. Schow, W. M. J. Green, S. Assefa, M. Yang, F. E. Doany, C. V. Jahnes, R. A.

More information

Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects

Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects By Mieke Van Bavel, science editor, imec, Belgium; Joris Van Campenhout, imec, Belgium; Wim Bogaerts, imec s associated

More information

New silicon photonics technology delivers faster data traffic in data centers

New silicon photonics technology delivers faster data traffic in data centers Edition May 2017 Silicon Photonics, Photonics New silicon photonics technology delivers faster data traffic in data centers New transceiver with 10x higher bandwidth than current transceivers. Today, the

More information

Silicon photonics on 3 and 12 μm thick SOI for optical interconnects Timo Aalto VTT Technical Research Centre of Finland

Silicon photonics on 3 and 12 μm thick SOI for optical interconnects Timo Aalto VTT Technical Research Centre of Finland Silicon photonics on 3 and 12 μm thick SOI for optical interconnects Timo Aalto VTT Technical Research Centre of Finland 5th International Symposium for Optical Interconnect in Data Centres in ECOC, Gothenburg,

More information

Introduction Fundamental of optical amplifiers Types of optical amplifiers

Introduction Fundamental of optical amplifiers Types of optical amplifiers ECE 6323 Introduction Fundamental of optical amplifiers Types of optical amplifiers Erbium-doped fiber amplifiers Semiconductor optical amplifier Others: stimulated Raman, optical parametric Advanced application:

More information

Photo-Electronic Crossbar Switching Network for Multiprocessor Systems

Photo-Electronic Crossbar Switching Network for Multiprocessor Systems Photo-Electronic Crossbar Switching Network for Multiprocessor Systems Atsushi Iwata, 1 Takeshi Doi, 1 Makoto Nagata, 1 Shin Yokoyama 2 and Masataka Hirose 1,2 1 Department of Physical Electronics Engineering

More information

Figure 1 Basic waveguide structure

Figure 1 Basic waveguide structure Recent Progress in SOI Nanophotonic Waveguides D. Van Thourhout, P. Dumon, W. Bogaerts, G. Roelkens, D. Taillaert, G. Priem, R. Baets IMEC-Ghent University, Department of Information Technology, St. Pietersnieuwstraat

More information

Vertical External Cavity Surface Emitting Laser

Vertical External Cavity Surface Emitting Laser Chapter 4 Optical-pumped Vertical External Cavity Surface Emitting Laser The booming laser techniques named VECSEL combine the flexibility of semiconductor band structure and advantages of solid-state

More information

Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS

Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS Diode Laser Characteristics I. BACKGROUND Beginning in the mid 1960 s, before the development of semiconductor diode lasers, physicists mostly

More information

Examination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:

Examination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade: Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on

More information

Silicon Photonics in Optical Communications. Lars Zimmermann, IHP, Frankfurt (Oder), Germany

Silicon Photonics in Optical Communications. Lars Zimmermann, IHP, Frankfurt (Oder), Germany Silicon Photonics in Optical Communications Lars Zimmermann, IHP, Frankfurt (Oder), Germany Outline IHP who we are Silicon photonics Photonic-electronic integration IHP photonic technology Conclusions

More information

Frequency Noise Reduction of Integrated Laser Source with On-Chip Optical Feedback

Frequency Noise Reduction of Integrated Laser Source with On-Chip Optical Feedback MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com Frequency Noise Reduction of Integrated Laser Source with On-Chip Optical Feedback Song, B.; Kojima, K.; Pina, S.; Koike-Akino, T.; Wang, B.;

More information

InP-based Waveguide Photodetector with Integrated Photon Multiplication

InP-based Waveguide Photodetector with Integrated Photon Multiplication InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,

More information

Lecture 4 INTEGRATED PHOTONICS

Lecture 4 INTEGRATED PHOTONICS Lecture 4 INTEGRATED PHOTONICS What is photonics? Photonic applications use the photon in the same way that electronic applications use the electron. Devices that run on light have a number of advantages

More information

Integrated disruptive components for 2µm fibre Lasers ISLA. 2 µm Sub-Picosecond Fiber Lasers

Integrated disruptive components for 2µm fibre Lasers ISLA. 2 µm Sub-Picosecond Fiber Lasers Integrated disruptive components for 2µm fibre Lasers ISLA 2 µm Sub-Picosecond Fiber Lasers Advantages: 2 - microns wavelength offers eye-safety potentially higher pulse energy and average power in single

More information

R. J. Jones Optical Sciences OPTI 511L Fall 2017

R. J. Jones Optical Sciences OPTI 511L Fall 2017 R. J. Jones Optical Sciences OPTI 511L Fall 2017 Semiconductor Lasers (2 weeks) Semiconductor (diode) lasers are by far the most widely used lasers today. Their small size and properties of the light output

More information

The Past, Present, and Future of Silicon Photonics

The Past, Present, and Future of Silicon Photonics The Past, Present, and Future of Silicon Photonics Myung-Jae Lee High-Speed Circuits & Systems Lab. Dept. of Electrical and Electronic Engineering Yonsei University Outline Introduction A glance at history

More information

Lithography. 3 rd. lecture: introduction. Prof. Yosi Shacham-Diamand. Fall 2004

Lithography. 3 rd. lecture: introduction. Prof. Yosi Shacham-Diamand. Fall 2004 Lithography 3 rd lecture: introduction Prof. Yosi Shacham-Diamand Fall 2004 1 List of content Fundamental principles Characteristics parameters Exposure systems 2 Fundamental principles Aerial Image Exposure

More information

Si and InP Integration in the HELIOS project

Si and InP Integration in the HELIOS project Si and InP Integration in the HELIOS project J.M. Fedeli CEA-LETI, Grenoble ( France) ECOC 2009 1 Basic information about HELIOS HELIOS photonics ELectronics functional Integration on CMOS www.helios-project.eu

More information

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626

OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626 OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #3 is due today No class Monday, Feb 26 Pre-record

More information

Section 2: Lithography. Jaeger Chapter 2 Litho Reader. EE143 Ali Javey Slide 5-1

Section 2: Lithography. Jaeger Chapter 2 Litho Reader. EE143 Ali Javey Slide 5-1 Section 2: Lithography Jaeger Chapter 2 Litho Reader EE143 Ali Javey Slide 5-1 The lithographic process EE143 Ali Javey Slide 5-2 Photolithographic Process (a) (b) (c) (d) (e) (f) (g) Substrate covered

More information

Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I

Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I Prof. Utpal Das Professor, Department of lectrical ngineering, Laser Technology Program, Indian Institute

More information

The Light at the End of the Wire. Dana Vantrease + HP Labs + Mikko Lipasti

The Light at the End of the Wire. Dana Vantrease + HP Labs + Mikko Lipasti The Light at the End of the Wire Dana Vantrease + HP Labs + Mikko Lipasti 1 Goals of This Talk Why should we (architects) be interested in optics? How does on-chip optics work? What can we build with optics?

More information

Photonics and Optical Communication Spring 2005

Photonics and Optical Communication Spring 2005 Photonics and Optical Communication Spring 2005 Final Exam Instructor: Dr. Dietmar Knipp, Assistant Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Final Exam: 2 hour You

More information

External Cavity Diode Laser Tuned with Silicon MEMS

External Cavity Diode Laser Tuned with Silicon MEMS External Cavity Diode Laser Tuned with Silicon MEMS MEMS-Tunable External Cavity Diode Laser Lenses Laser Output Diffraction Grating AR-coated FP Diode Silicon Mirror 3 mm Balanced MEMS Actuator iolon

More information

Section 2: Lithography. Jaeger Chapter 2 Litho Reader. The lithographic process

Section 2: Lithography. Jaeger Chapter 2 Litho Reader. The lithographic process Section 2: Lithography Jaeger Chapter 2 Litho Reader The lithographic process Photolithographic Process (a) (b) (c) (d) (e) (f) (g) Substrate covered with silicon dioxide barrier layer Positive photoresist

More information

Chapter 8. Wavelength-Division Multiplexing (WDM) Part II: Amplifiers

Chapter 8. Wavelength-Division Multiplexing (WDM) Part II: Amplifiers Chapter 8 Wavelength-Division Multiplexing (WDM) Part II: Amplifiers Introduction Traditionally, when setting up an optical link, one formulates a power budget and adds repeaters when the path loss exceeds

More information

A Fully Integrated 20 Gb/s Optoelectronic Transceiver Implemented in a Standard

A Fully Integrated 20 Gb/s Optoelectronic Transceiver Implemented in a Standard A Fully Integrated 20 Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13 µm CMOS SOI Technology School of Electrical and Electronic Engineering Yonsei University 이슬아 1. Introduction 2. Architecture

More information

! Couplers. ! Isolators/Circulators. ! Multiplexers/Filters. ! Optical Amplifiers. ! Transmitters (lasers,leds) ! Detectors (receivers) !

! Couplers. ! Isolators/Circulators. ! Multiplexers/Filters. ! Optical Amplifiers. ! Transmitters (lasers,leds) ! Detectors (receivers) ! Components of Optical Networks Based on: Rajiv Ramaswami, Kumar N. Sivarajan, Optical Networks A Practical Perspective 2 nd Edition, 2001 October, Morgan Kaufman Publishers Optical Components! Couplers!

More information

WWDM Transceiver Module for 10-Gb/s Ethernet

WWDM Transceiver Module for 10-Gb/s Ethernet WWDM Transceiver Module for 10-Gb/s Ethernet Brian E. Lemoff Hewlett-Packard Laboratories lemoff@hpl.hp.com IEEE 802.3 HSSG Interim Meeting Coeur d Alene, Idaho June 1-3, 1999 Why pursue WWDM for the LAN?

More information

This writeup is adapted from Fall 2002, final project report for by Robert Winsor.

This writeup is adapted from Fall 2002, final project report for by Robert Winsor. Optical Waveguides in Andreas G. Andreou This writeup is adapted from Fall 2002, final project report for 520.773 by Robert Winsor. September, 2003 ABSTRACT This lab course is intended to give students

More information

Integrated electro-optical waveguide based devices with liquid crystals on a silicon backplane

Integrated electro-optical waveguide based devices with liquid crystals on a silicon backplane Integrated electro-optical waveguide based devices with liquid crystals on a silicon backplane Florenta Costache Group manager Smart Micro-Optics SMO/AMS Fraunhofer Institute for Photonic Microsystems,

More information

- no emitters/amplifiers available. - complex process - no CMOS-compatible

- no emitters/amplifiers available. - complex process - no CMOS-compatible Advantages of photonic integrated circuits (PICs) in Microwave Photonics (MWP): compactness low-power consumption, stability flexibility possibility of aggregating optics and electronics functionalities

More information

PLC-based integrated devices for advanced modulation formats

PLC-based integrated devices for advanced modulation formats ECOC 2009 workshop 7-5 Sep. 20, 2009 PLC-based integrated devices for advanced modulation formats Y. Inoue NTT Photonics Labs. NTT Corporation NTT Photonics Laboratories Hybrid integration of photonics

More information

A tunable Si CMOS photonic multiplexer/de-multiplexer

A tunable Si CMOS photonic multiplexer/de-multiplexer A tunable Si CMOS photonic multiplexer/de-multiplexer OPTICS EXPRESS Published : 25 Feb 2010 MinJae Jung M.I.C.S Content 1. Introduction 2. CMOS photonic 1x4 Si ring multiplexer Principle of add/drop filter

More information

Graphene electro-optic modulator with 30 GHz bandwidth

Graphene electro-optic modulator with 30 GHz bandwidth Graphene electro-optic modulator with 30 GHz bandwidth Christopher T. Phare 1, Yoon-Ho Daniel Lee 1, Jaime Cardenas 1, and Michal Lipson 1,2,* 1School of Electrical and Computer Engineering, Cornell University,

More information

ECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016

ECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016 ECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016 Lecture 10: Electroabsorption Modulator Transmitters Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements

More information

Envisioning the Future of Optoelectronic Interconnects:

Envisioning the Future of Optoelectronic Interconnects: Envisioning the Future of Optoelectronic Interconnects: The Production Economics of InP and Si Platforms for 100G Ethernet LAN Transceivers Shan Liu Dr. Erica Fuchs Prof. Randolph Kirchain MIT Microphotonics

More information

Heinrich-Hertz-Institut Berlin

Heinrich-Hertz-Institut Berlin NOVEMBER 24-26, ECOLE POLYTECHNIQUE, PALAISEAU OPTICAL COUPLING OF SOI WAVEGUIDES AND III-V PHOTODETECTORS Ludwig Moerl Heinrich-Hertz-Institut Berlin Photonic Components Dept. Institute for Telecommunications,,

More information

OPTICAL I/O RESEARCH PROGRAM AT IMEC

OPTICAL I/O RESEARCH PROGRAM AT IMEC OPTICAL I/O RESEARCH PROGRAM AT IMEC IMEC CORE CMOS PHILIPPE ABSIL, PROGRAM DIRECTOR JORIS VAN CAMPENHOUT, PROGRAM MANAGER SCALING TRENDS IN CHIP-LEVEL I/O RECENT EXAMPLES OF HIGH-BANDWIDTH I/O Graphics

More information

Application Instruction 002. Superluminescent Light Emitting Diodes: Device Fundamentals and Reliability

Application Instruction 002. Superluminescent Light Emitting Diodes: Device Fundamentals and Reliability I. Introduction II. III. IV. SLED Fundamentals SLED Temperature Performance SLED and Optical Feedback V. Operation Stability, Reliability and Life VI. Summary InPhenix, Inc., 25 N. Mines Road, Livermore,

More information

A novel tunable diode laser using volume holographic gratings

A novel tunable diode laser using volume holographic gratings A novel tunable diode laser using volume holographic gratings Christophe Moser *, Lawrence Ho and Frank Havermeyer Ondax, Inc. 85 E. Duarte Road, Monrovia, CA 9116, USA ABSTRACT We have developed a self-aligned

More information

Silicon Photonics Transceivers for Hyper Scale Datacenters: Deployment and Roadmap

Silicon Photonics Transceivers for Hyper Scale Datacenters: Deployment and Roadmap Silicon Photonics Transceivers for Hyper Scale Datacenters: Deployment and Roadmap Peter De Dobbelaere Luxtera Inc. 09/19/2016 Luxtera Proprietary www.luxtera.com Luxtera Company Introduction $100B+ Shift

More information

Silicon Photonics Michael R. Bynum Physics 464: Applied Optics Winter 2006

Silicon Photonics Michael R. Bynum Physics 464: Applied Optics Winter 2006 Silicon Photonics Michael R. Bynum Physics 464: Applied Optics Winter 2006 Abstract Copper interconnects will soon be the limiting factor of the performance of a computer. The aim of Silicon Photonics

More information

A new picosecond Laser pulse generation method.

A new picosecond Laser pulse generation method. PULSE GATING : A new picosecond Laser pulse generation method. Picosecond lasers can be found in many fields of applications from research to industry. These lasers are very common in bio-photonics, non-linear

More information

Silicon nitride based TriPleX Photonic Integrated Circuits for sensing applications

Silicon nitride based TriPleX Photonic Integrated Circuits for sensing applications Silicon nitride based TriPleX Photonic Integrated Circuits for sensing applications Arne Leinse a.leinse@lionix-int.com 2 Our chips drive your business 2 What are Photonic ICs (PICs)? Photonic Integrated

More information

Nd: YAG Laser Energy Levels 4 level laser Optical transitions from Ground to many upper levels Strong absorber in the yellow range None radiative to

Nd: YAG Laser Energy Levels 4 level laser Optical transitions from Ground to many upper levels Strong absorber in the yellow range None radiative to Nd: YAG Lasers Dope Neodynmium (Nd) into material (~1%) Most common Yttrium Aluminum Garnet - YAG: Y 3 Al 5 O 12 Hard brittle but good heat flow for cooling Next common is Yttrium Lithium Fluoride: YLF

More information

Integrated photonic circuit in silicon on insulator for Fourier domain optical coherence tomography

Integrated photonic circuit in silicon on insulator for Fourier domain optical coherence tomography Integrated photonic circuit in silicon on insulator for Fourier domain optical coherence tomography Günay Yurtsever *,a, Pieter Dumon a, Wim Bogaerts a, Roel Baets a a Ghent University IMEC, Photonics

More information

Silicon photonics integration roadmap for applications in computing systems

Silicon photonics integration roadmap for applications in computing systems Silicon photonics integration roadmap for applications in computing systems Bert Jan Offrein Neuromorphic Devices and Systems Group 2016 IBM Corporation Outline Photonics and computing? The interconnect

More information

InP-based Waveguide Photodetector with Integrated Photon Multiplication

InP-based Waveguide Photodetector with Integrated Photon Multiplication InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,

More information

inemi OPTOELECTRONICS ROADMAP FOR 2004 Dr. Laura J. Turbini University of Toronto SMTA International September 26, 2005

inemi OPTOELECTRONICS ROADMAP FOR 2004 Dr. Laura J. Turbini University of Toronto SMTA International September 26, 2005 inemi OPTOELECTRONICS ROADMAP FOR 2004 0 Dr. Laura J. Turbini University of Toronto SMTA International September 26, 2005 Outline Business Overview Traditional vs Jisso Packaging Levels Optoelectronics

More information

Robert G. Hunsperger. Integrated Optics. Theory and Technology. Sixth Edition. 4ü Spri rineer g<

Robert G. Hunsperger. Integrated Optics. Theory and Technology. Sixth Edition. 4ü Spri rineer g< Robert G. Hunsperger Integrated Optics Theory and Technology Sixth Edition 4ü Spri rineer g< 1 Introduction 1 1.1 Advantages of Integrated Optics 2 1.1.1 Comparison of Optical Fibers with Other Interconnectors

More information

S Optical Networks Course Lecture 2: Essential Building Blocks

S Optical Networks Course Lecture 2: Essential Building Blocks S-72.3340 Optical Networks Course Lecture 2: Essential Building Blocks Edward Mutafungwa Communications Laboratory, Helsinki University of Technology, P. O. Box 2300, FIN-02015 TKK, Finland Tel: +358 9

More information

EE 232 Lightwave Devices Optical Interconnects

EE 232 Lightwave Devices Optical Interconnects EE 232 Lightwave Devices Optical Interconnects Sajjad Moazeni Department of Electrical Engineering & Computer Sciences University of California, Berkeley 1 Emergence of Optical Links US IT Map Hyper-Scale

More information

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html

More information

Hybrid Integration Technology of Silicon Optical Waveguide and Electronic Circuit

Hybrid Integration Technology of Silicon Optical Waveguide and Electronic Circuit Hybrid Integration Technology of Silicon Optical Waveguide and Electronic Circuit Daisuke Shimura Kyoko Kotani Hiroyuki Takahashi Hideaki Okayama Hiroki Yaegashi Due to the proliferation of broadband services

More information

Nanophotonics for low latency optical integrated circuits

Nanophotonics for low latency optical integrated circuits Nanophotonics for low latency optical integrated circuits Akihiko Shinya NTT Basic Research Labs., Nanophotonics Center, NTT Corporation MPSoC 17, Annecy, France Outline Low latency optical circuit BDD

More information

Fiberoptic Communication Systems By Dr. M H Zaidi. Optical Amplifiers

Fiberoptic Communication Systems By Dr. M H Zaidi. Optical Amplifiers Optical Amplifiers Optical Amplifiers Optical signal propagating in fiber suffers attenuation Optical power level of a signal must be periodically conditioned Optical amplifiers are a key component in

More information

Micro-sensors - what happens when you make "classical" devices "small": MEMS devices and integrated bolometric IR detectors

Micro-sensors - what happens when you make classical devices small: MEMS devices and integrated bolometric IR detectors Micro-sensors - what happens when you make "classical" devices "small": MEMS devices and integrated bolometric IR detectors Dean P. Neikirk 1 MURI bio-ir sensors kick-off 6/16/98 Where are the targets

More information

Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes

Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes Abstract We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The

More information

Feature-level Compensation & Control

Feature-level Compensation & Control Feature-level Compensation & Control 2 Sensors and Control Nathan Cheung, Kameshwar Poolla, Costas Spanos Workshop 11/19/2003 3 Metrology, Control, and Integration Nathan Cheung, UCB SOI Wafers Multi wavelength

More information

Lecture 1: Course Overview. Rajeev J. Ram

Lecture 1: Course Overview. Rajeev J. Ram Lecture 1: Course Overview Rajeev J. Ram Office: 36-491 Telephone: X3-4182 Email: rajeev@mit.edu Syllabus Basic concepts Advanced concepts Background: p-n junctions Photodetectors Modulators Optical amplifiers

More information

FIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 18.

FIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 18. FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 18 Optical Sources- Introduction to LASER Diodes Fiber Optics, Prof. R.K. Shevgaonkar,

More information

BMC s heritage deformable mirror technology that uses hysteresis free electrostatic

BMC s heritage deformable mirror technology that uses hysteresis free electrostatic Optical Modulator Technical Whitepaper MEMS Optical Modulator Technology Overview The BMC MEMS Optical Modulator, shown in Figure 1, was designed for use in free space optical communication systems. The

More information

160-Gb/s Bidirectional Parallel Optical Transceiver Module for Board-Level Interconnects

160-Gb/s Bidirectional Parallel Optical Transceiver Module for Board-Level Interconnects 160-Gb/s Bidirectional Parallel Optical Transceiver Module for Board-Level Interconnects Fuad Doany, Clint Schow, Jeff Kash C. Baks, D. Kuchta, L. Schares, & R. John IBM T. J. Watson Research Center doany@us.ibm.com

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices - 2014 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 3 th of Feb 14 MOSFET Unmodified Channel

More information

Introduction and concepts Types of devices

Introduction and concepts Types of devices ECE 6323 Introduction and concepts Types of devices Passive splitters, combiners, couplers Wavelength-based devices for DWDM Modulator/demodulator (amplitude and phase), compensator (dispersion) Others:

More information

Semiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi

Semiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi Semiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi Lecture - 26 Semiconductor Optical Amplifier (SOA) (Refer Slide Time: 00:39) Welcome to this

More information

OPTICAL NETWORKS. Building Blocks. A. Gençata İTÜ, Dept. Computer Engineering 2005

OPTICAL NETWORKS. Building Blocks. A. Gençata İTÜ, Dept. Computer Engineering 2005 OPTICAL NETWORKS Building Blocks A. Gençata İTÜ, Dept. Computer Engineering 2005 Introduction An introduction to WDM devices. optical fiber optical couplers optical receivers optical filters optical amplifiers

More information

MICROPROCESSOR TECHNOLOGY

MICROPROCESSOR TECHNOLOGY MICROPROCESSOR TECHNOLOGY Assis. Prof. Hossam El-Din Moustafa Lecture 3 Ch.1 The Evolution of The Microprocessor 17-Feb-15 1 Chapter Objectives Introduce the microprocessor evolution from transistors to

More information

MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications

MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications Part I: RF Applications Introductions and Motivations What are RF MEMS? Example Devices RFIC RFIC consists of Active components

More information