ESD5V0SxUS. ESD5V0S5US E rotated in reel. Type Package Configuration Marking SOT363 SOT363 SOT363 ESD5V0S4US ESD5V0S5US

Size: px
Start display at page:

Download "ESD5V0SxUS. ESD5V0S5US E rotated in reel. Type Package Configuration Marking SOT363 SOT363 SOT363 ESD5V0S4US ESD5V0S5US"

Transcription

1 ESDV0SxUS MultiChannel TVS Diode Array ESD / transient protection of data and power lines in. V / V application according to: IEC00 (ESD): ± 0 KV (contact) IEC00 (EFT): 80 A (/0 ns) IEC00 (Surge): A (8/0 µs) Working voltage: V (. V max.) Low clamping voltage Low reverse current < µa Pbfree (RoHS compliant) package Applications Uni or bidirectional operation possible (see application example page ) Mobile communication Consumer products (STB, MP, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals ESDV0SUS ESDV0SUS ESDV0SUS E77 80 rotated in reel Type Package Configuration Marking ESDV0SUS ESDV0SUS ESDVSUS E77* * Preliminary data SOT SOT SOT lines, unidirectional lines, unidirectional lines, unidirectional Es Es on request 007

2 ESDV0SxUS Maximum Ratings at T A = C, unless otherwise specified Parameter Symbol Value Unit ESD contact discharge per diode ) V ESD 0 kv Peak pulse current (t p = 8 / 0 µs) per diode ) I pp A Peak pulse power (t p = 8 / 0 µs) per diode P pk 0 W Operating temperature range T op... C Storage temperature T stg... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Reverse working voltage V RWM. V Breakdown voltage I (BR) = ma V (BR) Reverse current V R =. V V R = V Clamping voltage (positive transients) I PP = A, t p = 8/0 µs ) I PP = A, t p = 8/0 µs ) I R V CL µa V 7 9. Forward clamping voltage (negative transients) V FC I PP = A, t p = 8/0 µs ) I PP = A, t p = 8/0 µs ). Diode capacitance C T pf V R = 0 V, f = MHz V R = V, f = MHz V ESD according to IEC00 I pp according to IEC00 007

3 ESDV0SxUS Power derating curve P pk = ƒ (T A ) Clamping voltage, V cl = ƒ(i pp ) t p = 8 / 0 µs (positive transients) % V Ppk or Ipp Vcl C A T A I pp Forward clamping voltage V FC = ƒ (I pp ) t p = 8 / 0 µs (negative transients) Reverse current I R = ƒ(v R ) T A = Parameter V A 7 VFC 9 8 IR 8 TA = C 8 C C A I pp 0 V V R 007

4 ESDV0SxUS Normalized reverse voltage V BR (T A )/V BR ( C)= ƒ(t A ) I R = ma.0 Diode capacitance C T = ƒ (V R ) f = MHz 90 VBR(Ta)/VBR( C) CT pf C 0 0 V T A V R 007

5 ESDV0SxUS Application example ESDV0SUS channels, unidirectional Connector protected signal lines, level V ESD sensitive device The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin should be connected directly to a ground plane on the board. Application example ESDV0SUS channels, bidirectional Connector protected signal lines, level.v... +.V ESD sensitive device For bidirectional protection pin (or any other pin except pin ) should be connected directly to a ground plane on the board. Pin is not connected. Total clamping voltage is the sum of V CL + V FC (see table on page ). Application example ESDV0SUS channels, unidirectional Connector protected signal lines, level 0 +.V ESD sensitive device Pin and pin should be connected directly to a ground plane on the board. 007

6 Package SOT ESDV0SxUS Package Outline ± x 0. M 0. MAX ±0. A Pin marking ±0. 0. MIN Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 00, June Date code (Year/Month) Pin marking Laser marking BCR8S Type code Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel For symmetric types no defined Pin orientation in reel ±0. 0. M A Pin marking.. 007

7 ESDV0SxUS Edition 009 Published by Infineon Technologies AG 87 Munich, Germany 009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered

ESD0P2RF-02LRH ESD0P2RF-02LS

ESD0P2RF-02LRH ESD0P2RF-02LS Bidirectional Ultra Low Capacitance TVS Diode ESD / transient protection of RF signal lines according to: IEC6004 (ESD): ±0kV (contact) IEC60044 (EFT): 40 A (5 / 50 ns) IEC60045 (Surge): 3 A (8 / 0 µs)

More information

Type Package Configuration L S (nh) Marking BB814 SOT23 common cathode 1.8 SH1/2*

Type Package Configuration L S (nh) Marking BB814 SOT23 common cathode 1.8 SH1/2* Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking

More information

BAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package

BAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package Silicon Schottky Diode For mixer applications in VHF/UHF range For highspeed switching application Pbfree (RoHS compliant) package BAT17 BAT17 BAT17W BAT175 BAT175W BAT176W BAT177 " ESD (Electrostatic

More information

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68- BAT68-W BAT68-6 BAT68-6W BAT68-7W BAT68-8S!!! "!

More information

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W BAS4.../BAS4W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Qualified according

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS BAT5... Silicon Schottky Diodes Low barrier type for DBS mixer applications up to GHz, phase detectors and modulators Low noise figure Pb-free (RoHS compliant) package BAT5-EL BAT5-ELS BAT5-W BAT5-4W BAT5-5W

More information

Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C

Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC

More information

BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W

BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W BAS7.../BAS7W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing BAS7-S: For orientation in reel see package information

More information

BCR129 BCR129S BCR129W

BCR129 BCR129S BCR129W BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one

More information

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23 NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according

More information

BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.

BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323. BCR8... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω) BCR8S / U: Two internally isolated transistors with good matching

More information

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61000-4-2 (ESD):

More information

BCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B

BCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B BCR8... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =. kω, R =47 kω) BCR8S: Two internally isolated transistors with good matching

More information

BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W

BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above MHz up to 6 GHz Very low capacitance at zero volt reverse bias at frequencies above GHz

More information

BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3

BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3 BCR... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = kω, R = kω) BCRS: Two internally isolated transistors with good matching

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge)

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe

More information

Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor

More information

BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -

BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - - BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) BCRU: Two internally isolated transistors with good matching

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! BFP7 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (Transient Voltage Suppressor) Bi-directional, 3.3 V, 6. pf, 2, RoHS and Halogen Free compliant Feature list ESD/transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air/contact discharge) -

More information

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC),.3 pf, 21, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC61-4-2

More information

Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23 Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification

More information

BF776. High Performance NPN Bipolar RF Transistor

BF776. High Performance NPN Bipolar RF Transistor High Performance NPN Bipolar RF Transistor High performance low noise amplifier Low minimum noise figure of typ. 0.8 db @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB,

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (transient voltage suppressor) Bi-directional, 5.5 V,.3 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61-4-2 (ESD): ±18 kv (air/contact

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (transient voltage suppressor) Bi-directional, 5.5 V,.2 pf, 5, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC6-4-2 (ESD): ±25 kv

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (transient voltage suppressor) Bi-directional, 5.5 V, 3.5 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of susceptible I/O lines to: - IEC61-4-2 (ESD): ±3 kv (air/contact

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma Power amplifiers for DECT and

More information

BFP420. NPN Silicon RF Transistor

BFP420. NPN Silicon RF Transistor NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high

More information

Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74

Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74 LED Driver Supplies stable bias current even at low battery voltage Ideal for stabilizing bias current of LEDs Negative temperature coefficient protects 4 5 6 3 LEDs against thermal overload Suitable for

More information

Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143

Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143 Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 4 3 0 ma to 80 ma Power amplifier

More information

Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343

Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343 BFPESD Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value V (HBM) Outstanding G ms =. db @.8 GHz Minimum noise figure NF min =.9 db

More information

IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev

IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy

More information

IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev

IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage

More information

Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343

Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343 BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators

More information

Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343

Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343 BFP Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding G ms =. at.8 GHz Minimum noise figure NF min =.9 at.8 GHz Pbfree (RoHS compliant) and halogenfree package

More information

BFP620. Low Noise SiGe:C Bipolar RF Transistor

BFP620. Low Noise SiGe:C Bipolar RF Transistor Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon

More information

Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4

Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4 Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 db at 1.8 GHz Minimum noise figure NF min = 0.95 db at 1.8 GHz For oscillators up to 15 GHz Transition

More information

WE05MF. 2 SOT-553 (Top View) Features IEC COMPATIBILITY (EN ) Tel: Transient Voltage Suppressor SOT-553

WE05MF. 2 SOT-553 (Top View) Features IEC COMPATIBILITY (EN )   Tel: Transient Voltage Suppressor SOT-553 Document: W030044, Rev: A Transient Voltage Suppressor Features Solid-state silicon-avalanche technology 30 Watts Peak Pulse Power per Line (t p =8/20μs) Low operating and clamping voltages Up to Four

More information

Smart High-Side Power Switch BTS4140N

Smart High-Side Power Switch BTS4140N Ω Ω 4 2 1 PG-SOT-223 AEC qualified Green product (RoHS compliant) 3 VPS05163 General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated

More information

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1, Ω Ω Ω Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1, 2008-10-02 Data Sheet 2 Rev. 1.1, 2008-10-02 Data Sheet 3 Rev. 1.1, 2008-10-02 Ω Ω Ω Ω Ω Ω ± ± ± Ω μ Data Sheet 4 Rev. 1.1, 2008-10-02 = Ω Ω

More information

EAYW ESD5425E ESD5425E. Descriptions. Features. Order information. Applications. http//:

EAYW ESD5425E ESD5425E. Descriptions. Features. Order information. Applications. http//: 4-Lines, Uni-directional, Low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high

More information

BFG235. NPN Silicon RF Transistor*

BFG235. NPN Silicon RF Transistor* NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT

More information

6V8 * ESDA6V8UD ESDA6V8UD. Descriptions. Features. Order information. Applications. http//:

6V8 * ESDA6V8UD ESDA6V8UD. Descriptions. Features. Order information. Applications. http//: 4-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) array designed to

More information

Type Marking Pin Configuration Package BCR139F BCR139L3 BCR139T 2=E 2=E 2=E 1=B 1=B 1=B 3=C 3=C 3=C

Type Marking Pin Configuration Package BCR139F BCR139L3 BCR139T 2=E 2=E 2=E 1=B 1=B 1=B 3=C 3=C 3=C BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9F/L BCR9T C R B E EH764 Type Marking Pin Configuration Package

More information

Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3

Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3 Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector

More information

5V 4 * 1 5 ESD5344D ESD5344D. Descriptions. Features. Order information. Applications. http//:www.sh-willsemi.com

5V 4 * 1 5 ESD5344D ESD5344D. Descriptions. Features. Order information. Applications. http//:www.sh-willsemi.com ESD5344D 4-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5344D is an ultra-low capacitance TVS (Transient Voltage Suppressor)

More information

BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V

BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V BCRU LED Driver Features LED drive current of Output current adjustable up to 5 with external resistor 5 3 Supply voltage up to V Easy paralleling of drivers to increase current Low voltage overhead of.v

More information

Type Marking Pin Configuration Package BCR400W W4s 1=GND/E NPN 2=Contr/B NPN 3V S 4=Rext/C NPN SOT343

Type Marking Pin Configuration Package BCR400W W4s 1=GND/E NPN 2=Contr/B NPN 3V S 4=Rext/C NPN SOT343 BCRW Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of.7v Application notes Stabilizing bias

More information

BFP405. NPN Silicon RF Transistor

BFP405. NPN Silicon RF Transistor BFP5 NPN Silicon RF Transistor For low current applications For oscillators up to GHz Noise figure F =.5 db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization for

More information

BFP420. NPN Silicon RF Transistor

BFP420. NPN Silicon RF Transistor BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization

More information

3 * ESD5302N ESD5302N. Descriptions. Features. Applications. Order information. http//:

3 * ESD5302N ESD5302N. Descriptions. Features. Applications. Order information. http//: 2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) array designed to

More information

BFP520. NPN Silicon RF Transistor

BFP520. NPN Silicon RF Transistor NPN Silicon RF Transistor For highest gain low noise amplifier at. GHz and ma / V Outstanding Gms =.5 Noise Figure F =.95 For oscillators up to 5 GHz Transition frequency f T = 5 GHz Gold metallisation

More information

ESD9N12BA ESD9N12BA. Descriptions. Features. Applications. Order information. http//:

ESD9N12BA ESD9N12BA. Descriptions. Features. Applications. Order information. http//: 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ES9N12BA is a TVS (Transient Voltage Suppressor) designed to protect sensitive electronic components which

More information

WS2.8LVU. Features IEC COMPATIBILITY (EN ) Transient Voltage Suppressor. SOT23-3L (Top View) Document: W , Rev: C

WS2.8LVU. Features IEC COMPATIBILITY (EN ) Transient Voltage Suppressor. SOT23-3L (Top View) Document: W , Rev: C Document: W33, Rev: C Transient Voltage Suppressor Features 4 Watts peak pulse power (t p =8/μs) One device protects one unidirectional line Two devices protect two high-speed data line pairs Low capacitance

More information

LCDA15-1. Low Capacitance TVS Diode Array PRELIMINARY Features. PROTECTION PRODUCTS Description. Mechanical Characteristics.

LCDA15-1. Low Capacitance TVS Diode Array PRELIMINARY Features. PROTECTION PRODUCTS Description. Mechanical Characteristics. Description The is a low capacitance transient voltage suppressor (TVS) diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD and lightning. Each device will protect

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications

More information

PESDHC5D7VU ESD Protector

PESDHC5D7VU ESD Protector ESD Protector Description The protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional

More information

1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode

1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1.1 Features ESD / transient protection of RF signal lines

More information

PESDxV4UG series. 1. Product profile. Very low capacitance quadruple ESD protection diode arrays in SOT353 package. 1.1 General description

PESDxV4UG series. 1. Product profile. Very low capacitance quadruple ESD protection diode arrays in SOT353 package. 1.1 General description in SOT353 package Rev. 02 7 April 2005 Product data sheet 1. Product profile 1.1 General description Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in very small SOT353

More information

PESDSC2FD5VB ESD Protector

PESDSC2FD5VB ESD Protector ESD Protector Description The protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional

More information

PESDAWC236T5VU Low Capacitance TVS Array

PESDAWC236T5VU Low Capacitance TVS Array Low Capacitance TVS Array Description The is low capacitance transient voltage suppressor 6 5 4 array for high speed data interface that designed to protect sensitive electronics from damage or latch-up

More information

PESDxS1UL series. 1. Product profile. ESD protection diodes in a SOD882 package. 1.1 General description. 1.2 Features. 1.

PESDxS1UL series. 1. Product profile. ESD protection diodes in a SOD882 package. 1.1 General description. 1.2 Features. 1. Rev. 01 31 March 2006 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface Mounted Device

More information

UESD6V8S2B. Dual Line ESD Protection Diode Array UESD6V8S2B SOT523. General Description. M: Monthly Code UESD6V8S2B SOT523

UESD6V8S2B. Dual Line ESD Protection Diode Array UESD6V8S2B SOT523. General Description. M: Monthly Code UESD6V8S2B SOT523 General Description UESD6V8S2B Dual Line ESD Protection Diode Array UESD6V8S2B SOT523 The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD.

More information

ESD5641DXX series. ESD5641DXX series. Descriptions. Features. Applications. Order information. http//:

ESD5641DXX series. ESD5641DXX series. Descriptions. Features. Applications. Order information. http//: 1-Line, Uni-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPI9N3LA, IPP9N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V

More information

SR70 RailClamp Low Capacitance TVS Diode Array

SR70 RailClamp Low Capacitance TVS Diode Array Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The has been specifically designed to protect sensitive components which are connected to data and transmission

More information

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD-Protection Diode in SOT-323

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD-Protection Diode in SOT-323 VCAN26A2-3G Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD-Protection Diode in SOT-323 3 1 2 22742 MARKING (example only) 22743 WW VY ABC ABC = type code (see table below) WW = date code

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution! NPN Silicon RF Transistor* For low current applications Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure F = 1.25 db at 1.8 GHz outstanding G ms = 23 db at 1.8 GHz Transition frequency f T = 25 GHz Gold

More information

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-23

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-23 VCAN26A2-3S Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-23 FEATURES 3 For CAN and FLEX-Bus applications Small SOT-23 package AEC-Q1 qualified available 1 2 22742

More information

BCR401R LED Driver Features Applications General Description

BCR401R LED Driver Features Applications General Description LED Driver Features LED drive current of ma Output current adjustable up to 60mA with external resistor Supply voltage up to 8V Easy paralleling of drivers to increase current Low voltage overhead of.v

More information

SP A Discrete Unidirectional TVS Diode

SP A Discrete Unidirectional TVS Diode SP1212 12A Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SP1212 unidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic

More information

SM24CANA Series 200W TVS Diode Array

SM24CANA Series 200W TVS Diode Array SM24CANA Series 2W TVS Diode Array RoHS Pb GREEN Description The SM24CANA TVS Diode Array is designed to protect automotive Controller Area Network (CAN lines from damage due to electrostatic discharge

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110 Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

ESDCANxx-2BLY. Automotive dual-line TVS in SOT23-3L for CAN bus. Datasheet. Features. Applications. Description

ESDCANxx-2BLY. Automotive dual-line TVS in SOT23-3L for CAN bus. Datasheet. Features. Applications. Description Datasheet Automotive dual-line TVS in SOT23-3L for CAN bus Features AEC-Q101 qualified Dual-line ESD and EOS protection Breakdown voltage: V BR : 25 V : 27 V : 27.5 V : 38 V Bidirectional device Max pulse

More information

Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices

Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG

More information

ESDARF02-1BU2CK. Single-line bidirectional ESD protection for high speed interface. Features. Applications. Description

ESDARF02-1BU2CK. Single-line bidirectional ESD protection for high speed interface. Features. Applications. Description Single-line bidirectional ESD protection for high speed interface Features Datasheet production data Bidirectional device Extra low diode capacitance: 0.2 pf Low leakage current 0201 SMD package size compatible

More information

CAN bus ESD protection diode

CAN bus ESD protection diode Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller

More information

ESD5311X ESD5311X 1-Line, Bi-directional, Ultra-low Capacitance http//: Transient Voltage Suppressors Descriptions

ESD5311X ESD5311X 1-Line, Bi-directional, Ultra-low Capacitance http//:  Transient Voltage Suppressors Descriptions 1-Line, Bi-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high

More information

SM712 Series 600W Asymmetrical TVS Diode Array

SM712 Series 600W Asymmetrical TVS Diode Array SM712 Series 6W Asymmetrical TVS Diode Array RoHS Pb GREEN Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to 12V from damage due

More information

IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Short circuit withstand time 10µs Designed for : Soft Switching Applications Induction

More information

ESD051-1F4. Low clamping single line unidirectional ESD. Datasheet. Features. Application. Description

ESD051-1F4. Low clamping single line unidirectional ESD. Datasheet. Features. Application. Description Datasheet Low clamping single line unidirectional ESD Features ST0201 package Low clamping voltage: -3 V / +9 V (IEC 61000-4-2 contact discharge at 30 ns) Unidirectional diode Low leakage current 0201

More information

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES www.vishay.com Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES 2 746 MARKING (example only) XX 2052 YYY XX Bar = cathode marking YYY = type code (see table below) XX = date

More information

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES www.vishay.com Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces 2 746 MARKING (example only) XX 2052 YYY XX Bar = cathode marking YYY = type code (see table below) XX = date code 2057

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

PESDLC23T5VU Low Capacitance ESD Protector

PESDLC23T5VU Low Capacitance ESD Protector Low Capacitance ESD Protector Description The is a TVS designed to protect I/O or data lines from the damaging effects of ESD. It is low capacitance transient voltage suppressors for high speed data interface

More information

TLE4916-1K. Datasheet. Sense & Control. Low Power Automotive Hall Switch. Rev.1.0,

TLE4916-1K. Datasheet. Sense & Control. Low Power Automotive Hall Switch. Rev.1.0, Low Power Automotive Hall Switch Datasheet Rev.1.0, 2010-02-23 Sense & Control This datasheet has been downloaded from http://www.digchip.com at this page Edition 2010-02-23 Published by Infineon Technologies

More information

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description Rev. 1 10 December 2012 Product data sheet 1. Product profile 1.1 General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DSN0603-2 (SOD962) leadless

More information

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications

For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications Features Maximum collector-emitter voltage V CE0 = 15 V Maximum collector current I C = 25 ma Noise figure NF = 3.5 db 3rd order output intercept point OIP 3 = 21.5 dbm 1 db output compression point P

More information

IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted

More information

Qualified for industrial apllications according to the relevant tests of JEDEC47/20/22. Pin 1

Qualified for industrial apllications according to the relevant tests of JEDEC47/20/22. Pin 1 TVS (Transient Voltage Suppressor) Bi-directional, 5.5 V,.23 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±2 kv (air / contact discharge) -

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information