Advances in SiC Power Technology

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1 Advances in SiC Power Technology DARPA MTO Symposium San Jose, CA March 7, 2007 John Palmour David Grider, Anant Agarwal, Brett Hull, Bob Callanan, Jon Zhang, Jim Richmond, Mrinal Das, Joe Sumakeris, Adrian Powell, Mike Paisley, Mike O Loughlin Cree, Inc. 1

2 Report Documentation Page Form Approved OMB No Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. 1. REPORT DATE 07 MAR TITLE AND SUBTITLE Advances in SiCPower Technology 2. REPORT TYPE N/A 3. DATES COVERED - 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Cree, Inc. 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR S ACRONYM(S) 12. DISTRIBUTION/AVAILABILITY STATEMENT Approved for public release, distribution unlimited 11. SPONSOR/MONITOR S REPORT NUMBER(S) 13. SUPPLEMENTARY NOTES DARPA Microsystems Technology Symposium held in San Jose, California on March 5-7, Presentations, The original document contains color images. 14. ABSTRACT 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT UU a. REPORT unclassified b. ABSTRACT unclassified c. THIS PAGE unclassified 18. NUMBER OF PAGES 21 19a. NAME OF RESPONSIBLE PERSON Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18

3 Monthly Median Production MPD Median Micropipe Density, cm inch Title III DARPA HPE I 100 mm DARPA HPE I I Year 100-mm work supported by ARL MTO (W911NF ) and DARPA (N C-0306) 2

4 3-inch 4HN SiC Wafer Production Process Quality Best Production 3-inch 4HN SiC wafer MPD = 0.02 cm -2 Best R&D 3-inch 4HN SiC Wafer MPD = 0.00 cm -2 ZMP 3

5 100 mm 4HN-SiC Wafer Production Process Quality Almost Double the Area of a 3-inch 4HN-SiC Wafer Lowest MPD for 100 mm 4HN-SiC With MPD = 0.1 cm -2 Median MPD < 5 cm -2 in Production Process 4

6 Projected Device Yield From Lowest MPD 100 mm Wafer Thus Far Projected Yield for 1 cm 2 Devices Assume Device Failure Only From Micropipes Micropipe Density = 0.1 cm -2 Projected Device Yield > 94% Yielded Devices = 53 65% More Devices Than Ideal 3-inch 4HN SiC Wafer 5

7 Decreasing Cost of SiC Devices by Scaling Up 150mm Wafers Projected Impact > 6X More 4 cm 2 Devices on 150 mm 4HN SiC Wafer 3-inch 4HN-SiC Wafer ZMP Wafer MPD = 0 cm -2 4 cm 2 device yield = 100% Yielded 4 cm 2 devices = mm 4HN-SiC Wafer Wafer MPD = 0.20 cm -2 4 cm 2 device yield = 70% Yielding 4 cm 2 devices = 7 Projected 150 mm 4HN-SiC Wafer Estimated MPD = 0.20 cm -2 4 cm 2 device yield = 83% Yielding 4 cm 2 devices = 25 6

8 10kV/20A SiC PiN Diode Characteristics Up to 200ºC 10kV/20A SiC PiN Diode V F = 3.87 at 25 C V F = 3.60 at 200 C V BR > 11.5 kv I R < 300 na at 10 kv & Tj = 200 C Total SiC PiN Diode Yield ~ 40% 7

9 10kV SiC JBS Diode Demonstrated For 20 khz Switching of SiC Module Current (A) Amp/4 kv SiC Diode Reverse Recovery 10kV SiC PiN Diode With Large Q rr 30A PiN Diode 1A 30A PiN Diode 2A 30A PiN Diode 3A 30A PiN Diode 4A (control) 5A JBS Diode 1 10kV SiC JBS Diode With Small Q rr Time (ns) 10kV/20A SiC JBS Diode Has Much Smaller Reverse Recovery and Higher Switching Speed Compared to PiN SiC PiN Reverse Recovery Energy Dissipation still too high for 20 khz Solution - Use SiC Junction Barrier Schottky (JBS) Diodes Much Smaller Reverse Recovery (Q rr ) and Higher Switching Speed HPE-II Refocused on 10kV/20A SiC JBS Diodes 10kV/5A SiC JBS Diodes Demonstrated with Single Wafer Blocking Yield > 40% Remaining Issue 10kV SiC JBS Diode Needs to Be Scaled Up to 20A with 30%Yield 8

10 10kV/20A SiC JBS Diode Device Characteristics 10kV/20A SiC JBS Diode Yield Up to 37% 1.00E E-05 10kV/20A SiC JBS Diode 14.9x10.6 mm Chip Size Reverse Leakage Current (A) 8.00E E E E E E E E E Reverse Voltage (V) Reverse Blocking of 10kV/20A SiC JBS Diodes 10kV/20A SiC JBS Diodes Fabricated on 3-in 4HN-SiC Wafer 9

11 8110 mm 10kV/20A SiC DMOSFET 10kV/20A SiC DMOSFETs Fabricated on 3-in 4HN-SiC Wafer gate source source 8110 mm 10

12 9kV/20A SiC DMOSFET Device Characteristics 6.22V V GS =15V 1.4x x x µa ( 0.2 ma/cm 2 ) 10V 3V 5V I leakage (A) 8.0x x x x R on,sp = 91 mω-cm W/cm 2-2.0x V DS (V) BV > 9 kv 11

13 10kV SiC DMOSFET Demonstrated For 20 khz Switching of SiC Module Drain Voltage (V) Cree 10kV DMOSFET 8kV/8A Switching (NIST) Time (ns) 9 ~ 75 ns Switching Speed 10kV/10A SiC DMOSFETs 8 Demonstrated Vd (V) Id (A) Measured Switching Speed of ~ 75 ns for 10kV SiC DMOSFET at 25 C Drain Current (A) 10kV SiC DMOSFETs Capable of T j = 200 C Operation 10kV SiC DMOSFETs Have Switching Speed ~ 75 ns Enables 20kHz Switching of 10kV SiC Half H-Bridge Module Remaining Issue 10kV SiC DMOSFET Needs to Be Scaled Up to 20A with 30% Yield 12

14 10kV/20A SiC DMOSFET Half H-Bridge Module 13

15 What is next for SiC Power Devices? 10 kv pushing upper limit of SiC unipolar devices such as MOSFETs and Schottky diodes Higher voltage operation will require minority carrier devices (bipolar) The IGBT is the device used in Si for high speed bipolar switching above 1kV For SiC, this holds true for >10 kv (10 x the electric breakdown field of silicon) 14

16 Experimental Results of 12kV SiC N-IGBT and Si IGBT 150 Vg = 20 V Vg = 15 V SiC N-IGBT J C (A/cm 2 ) W/cm 2 Vg = 10 V Si IGBT (2X,6.5kV) V C (V)

17 Applications for SiC IGBTs kv SiC IGBTs Offer Significant Advantages for Future Combat Vessels Using Electrical Power for Propulsion, Aircraft Launch/Recovery & Weapons Systems CVN-21 DD (X) 16

18 Navy Applications For SiC IGBTs Propulsion 4160 V + Motor Drives Aircraft Launch and Recovery (EMALS) 4 kv Motors DC Power Distribution 6 kv Switchgear 17 Electromagnetic Gun

19 Silicon Switch Issues Low Voltage Rating of Silicon Switches Addressed Using Complicated Multi-Level Converters Multi-level converter requires isolated voltages large line frequency transformer needed that is almost as big as the converter Several Si switching devices are required 18

20 Cascaded Multilevel Converter Suitable for EMALS Based on Si-IGBTs OUT_A OUT_B OUT_C AC Input 1 A1 B1 C1 N1 AC Input 3 A3 B3 C3 N3 AC Input 5 A5 B5 C5 N5 Outputs to Motor AC Input 2 A2 B2 C2 N2 AC Input 4 A4 B4 C4 N4 AC Input 6 A6 B6 C6 N6 NEUTRAL NOTE: ALL IGBTS ASSUMED TO BE REVERSE CONDUCTING 19

21 Simplified 2-Level Converter for EMALS Based On 20 kv SiC n-igbts 20 kv SiC n-igbts Used to Implement EMALS Converter Operating from Single Floating 10 kvdc Bus Results In Significant Reduction in System Complexity Utilize Simple 3-Phase PWM VSI Topology Pulse Width Modulated Voltage Source Inverter Topology POTENTIAL 10 kvdc EMALS SCHEMATIC - 4H-SiC IGBT Approach Outputs to Motor OUT_A OUT_B OUT_C POSITIVE 10 kvdc NEGATIVE NOTE: ALL IGBTS ASSUMED TO BE REVERSE CONDUCTING 20 kv SiC n-igbts 20

22 Summary SiC material and device technology has advanced very rapidly under DARPA programs MOSFETs and Diodes of unprecedented size and voltage demonstrated 150 mm SiC substrates will make large area power devices much more affordable 12 kv SiC IGBTs demonstrated with characteristics far superior to silicon kv SiC IGBTs would offer tremendous benefits for electric propulsion, EMALS, and EM Gun applications in form of size, weight, and efficiency 21

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