NCS20081/2/4, NCV20081/2/ MHz, 42 A Low Power Operational Amplifier

Transcription

1 NCS8//, NCV8//. MHz, Low Power Operational mplifier The NCS8// is a family of single, dual and quad Operational mplifiers (Op mps) with. MHz of Gain Bandwidth Product (GBWP) and draws only of Quiescent current. The NCS8x has Input Offset Voltage of mv and operates from.8 V to. V supply voltage over a wide temperature range ( C to + C). The Rail to Rail In/Out operation allows the designers to use the entire supply voltage range while taking advantage of the. MHz GBWP. Thus, this family offers superior performance over many industry standard parts. These devices are EC Q qualified which is denoted by the NCV suffix. NCS8x s low current consumption and low voltage performance in space saving packages, makes them ideal for sensor signal conditioning and low voltage current sensing applications in utomotive, Consumer and Industrial markets. Features Wide Bandwidth:. MHz Low Supply Current/ Channel: (typ.) Low Input Offset Voltage: mv (max.) Wide Supply Range:.8 V to. V Wide Temperature Range: C to + C Rail to Rail Input and Output Unity Gain Stable vailable in Single, Dual and Quad Packages NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant pplications utomotive Battery Powered/ Portable pplication Sensor Signal Conditioning Low Voltage Current Sensing Filters Circuits Unity Gain Buffer SC7 CSE 9 Micro8 /MSOP8 CSE 86 TSSOP 8 CSE 98S SOIC CSE 7 TSOP /SOT3 CSE 83 ORDERING INFORMTION See detailed ordering and shipping information on page 3 of this data sheet. 8 SOIC 8 CSE 7 TSSOP CSE 98G DEVICE MRKING INFORMTION See general marking information in the device marking section on page of this data sheet. 6 UDFN6 CSE 7P This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. Semiconductor Components Industries, LLC, 7 November, 7 Rev. 9 Publication Order Number: NCS8/D

2 NCS8//, NCV8// MRKING DIGRMS Single Channel Configuration NCS8, NCV8 XXM SC7 CSE 9 XXXYW TSOP /SOT3 CSE 83 XX M UDFN6 CSE 7P Dual Channel Configuration NCS8, NCV8 8 XXXX YW 8 XXXXXX LYW XXX YWW Micro8 /MSOP8 CSE 86 SOIC 8 CSE 7 TSSOP 8 CSE 98S Quad Channel Configuration NCS8, NCV8 XXXX XXXX LYW XXXXX WLYWWG TSSOP CSE 98G SOIC CSE 7 XXXXX = Specific Device Code = ssembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or = Pb Free Package (Note: Microdot may be in either location)

3 NCS8//, NCV8// Single Channel Configuration NCS8, NCV8 OUT VSS + VDD IN+ VSS + VDD VSS NC + 6 OUT VDD IN+ 3 IN IN 3 OUT IN 3 IN+ SOT3 (TSOP ) SN Pinout Dual Channel Configuration NCS8, NCV8 SC7, SOT3 (TSOP ) SQ3, SN3 Pinout OUT Quadruple Channel Configuration NCS8, NCV8 UDFN6.6 x.6 OUT OUT IN IN+ VSS VDD OUT IN IN+ IN IN+ VDD IN+ IN IN IN+ VSS IN+ 3 IN 3 OUT 7 8 OUT 3 ORDERING INFORMTION Figure. Pin Connections Device Configuration utomotive Marking Package Shipping NCS8SQ3TG NCS8SNTG ER SOT3 /TSOP No NCS8SN3TG EU SOT3 /TSOP Single NCS8MUTG P UDFN6 P SC7 NCV8SQ3TG* P SC7 Yes NCV8SNTG* ER SOT3 /TSOP NCS8DMRG K8 Micro8/MSOP8 NCS8DRG No NCS8 SOIC 8 NCS8DTBRG K8 TSSOP 8 Dual NCV8DMRG* K8 Micro8/MSOP8 NCV8DRG* Yes NCS8 SOIC 8 NCV8DTBRG* K8 TSSOP 8 NCS8_ NCS8_ No TBD SOP NCS8_ TBD TSSOP NCV8_ Quad** TBD SOIC TBD SOIC NCV8_ Yes TBD SOP NCV8_ TBD TSSOP Contact local sales office for more information For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D *NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable. **In Development. Not yet released. 3

4 NCS8//, NCV8// BSOLUTE MXIMUM RTINGS (Note ) Rating Symbol Limit Unit Supply Voltage (V DD V SS ) (Note ) V S 7 V Input Voltage V I V SS. to V DD +. V Differential Input Voltage V ID ±V s V Maximum Input Current I I ± m Maximum Output Current I O ± m Continuous Total Power Dissipation (Note ) P D mw Maximum Junction Temperature T J C Storage Temperature Range T STG 6 to C Mounting Temperature (Infrared or Convection sec) T mount 6 C ESD Capability (Note 3) Human Body Model Machine Model Charge Device Model ESD HBM ESD MM ESD CDM Latch Up Current (Note ) I LU m Moisture Sensitivity Level (Note ) MSL Level Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICL CHRCTERISTICS for Safe Operating rea.. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability. 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EC Q (JEDEC standard: JESD ) ESD Machine Model tested per EC Q 3 (JEDEC standard: JESD ). Latch up Current tested per JEDEC standard: JESD78. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD- V THERML INFORMTION Parameter Symbol Channels Package Junction to mbient Thermal Resistance J Single Dual Quad Single Layer Board (Note 6) Multi Layer Board (Note 7) SC 7 9 SOT3 /TSOP 3 7 UDFN Micro8/MSOP SOIC TSSOP SOIC SOP TSSOP 6. Value based on S standard PCB according to JEDEC 3 with. oz copper and a 3 mm copper area 7. Value based on SP standard PCB according to JEDEC 7 with. oz copper and a mm copper area Unit C/W OPERTING RNGES Parameter Symbol Min Max Unit Operating Supply Voltage V S.8. V Differential Input Voltage V ID V S V Input Common Mode Range V ICM V SS. V DD +. V mbient Temperature T C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

5 NCS8//, NCV8// ELECTRICL CHRCTERISTICS T V S =.8 V T = C; R L k ; V CM = V OUT = mid supply unless otherwise noted. Boldface limits apply over the specified temperature range, T = C to C. (Note 8) Parameter Symbol Conditions Min Typ Max Unit INPUT CHRCTERISTICS Input Offset Voltage V OS. 3. mv mv Offset Voltage Drift V OS / T V/ C Input Bias Current (Note 8) I IB p p Input Offset Current (Note 8) I OS p p Channel Separation XTLK DC db Differential Input Resistance R ID G Common Mode Input Resistance R IN G Differential Input Capacitance C ID pf Common Mode Input Capacitance C CM pf Common Mode Rejection Ratio CMRR V CM = V SS. to V DD db V CM = V SS +. to V DD. OUTPUT CHRCTERISTICS Open Loop Voltage Gain VOL 86 db 8 Short Circuit Current I SC Output to positive rail, sinking current m Output to negative rail, sourcing current Output Voltage High V OH Voltage output swing from positive rail 3 9 mv Output Voltage Low V OL Voltage output swing from negative rail 3 9 mv C CHRCTERISTICS Unity Gain Bandwidth UGBW. MHz Slew Rate at Unity Gain SR V ID =. Vpp, Gain =. V/ s Phase Margin m 6 Gain Margin m 9 db Settling Time t S V IN =. Vpp, Settling time to.% s Gain = Settling time to.% 6 Open Loop Output Impedance Z OL f = Hz.8 NOISE CHRCTERISTICS Total Harmonic Distortion plus Noise THD+N V IN =. Vpp, f = khz, v =. % Input Referred Voltage Noise e n f = khz 3 nv/ Hz f = khz Input Referred Current Noise i n f = khz 3 f/ Hz SUPPLY CHRCTERISTICS Power Supply Rejection Ratio PSRR No Load 67 9 db 6 Power Supply Quiescent Current I DD Per channel, no load 6 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.

6 NCS8//, NCV8// ELECTRICL CHRCTERISTICS T V S = 3.3 V T = C; R L k ; V CM = V OUT = mid supply unless otherwise noted. Boldface limits apply over the specified temperature range, T = C to C. (Note 9) Parameter Symbol Conditions Min Typ Max Unit INPUT CHRCTERISTICS Input Offset Voltage V OS. 3. mv mv Offset Voltage Drift V OS / T V/ C Input Bias Current (Note 9) I IB p p Input Offset Current (Note 9) I OS p p Channel Separation XTLK DC db Differential Input Resistance R ID G Common Mode Input Resistance R IN G Differential Input Capacitance C ID pf Common Mode Input Capacitance C CM pf Common Mode Rejection Ratio CMRR V CM = V SS. to V DD db V CM = V SS +. to V DD. 8 OUTPUT CHRCTERISTICS Open Loop Voltage Gain VOL 9 db 86 Short Circuit Current I SC Output to positive rail, sinking current m Output to negative rail, sourcing current Output Voltage High V OH Voltage output swing from positive rail 3 mv Output Voltage Low V OL Voltage output swing from negative rail 3 mv C CHRCTERISTICS Unity Gain Bandwidth UGBW. MHz Slew Rate at Unity Gain SR V IN =. Vpp, Gain =. V/ s Phase Margin m 6 Gain Margin m 8 db Settling Time t S V IN =. Vpp, Settling time to.% s Gain = Settling time to.% 6 Open Loop Output Impedance Z OL f = Hz.8 NOISE CHRCTERISTICS Total Harmonic Distortion plus Noise THD+N V IN =. Vpp, f = khz, v =. % Input Referred Voltage Noise e n f = khz 3 nv/ Hz f = khz Input Referred Current Noise i n f = khz 3 f/ Hz SUPPLY CHRCTERISTICS Power Supply Rejection Ratio PSRR No Load 67 9 db 6 Power Supply Quiescent Current I DD Per channel, no load 6 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 6

7 NCS8//, NCV8// ELECTRICL CHRCTERISTICS T V S =. V T = C; R L k ; V CM = V OUT = mid supply unless otherwise noted. Boldface limits apply over the specified temperature range, T = C to C. (Note ) Parameter Symbol Conditions Min Typ Max Unit INPUT CHRCTERISTICS Input Offset Voltage V OS. 3. mv mv Offset Voltage Drift V OS / T V/ C Input Bias Current (Note ) I IB p p Input Offset Current (Note ) I OS p p Channel Separation XTLK DC db Differential Input Resistance R ID G Common Mode Input Resistance R IN G Differential Input Capacitance C ID pf Common Mode Input Capacitance C CM pf Common Mode Rejection Ratio CMRR V CM = V SS. to V DD db V CM = V SS +. to V DD. OUTPUT CHRCTERISTICS Open Loop Voltage Gain VOL 9 db 86 Short Circuit Current I SC Output to positive rail, sinking current m Output to negative rail, sourcing current Output Voltage High V OH Voltage output swing from positive rail 3 mv Output Voltage Low V OL Voltage output swing from negative rail 3 mv C CHRCTERISTICS Unity Gain Bandwidth UGBW. MHz Slew Rate at Unity Gain SR V ID = Vpp, Gain =. V/ s Phase Margin m 6 Gain Margin m 7 db Settling Time t S V IN = Vpp, Settling time to.% s Gain = Settling time to.% 6 Open Loop Output Impedance Z OL f = Hz.8 NOISE CHRCTERISTICS Total Harmonic Distortion plus Noise THD+N V IN = Vpp, f = khz, v =. % Input Referred Voltage Noise e n f = khz 3 nv/ Hz f = khz Input Referred Current Noise i n f = khz 3 f/ Hz SUPPLY CHRCTERISTICS Power Supply Rejection Ratio PSRR No Load 67 9 db 6 Power Supply Quiescent Current I DD Per channel, no load 8 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7

8 NCS8//, NCV8// TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified 6 T = C 6 V S = 3.3 V SUPPLY CURRENT ( ) T = C T = C 3 SUPPLY CURRENT ( ) 3 V S =. V V S =.8 V SUPPLY VOLTGE (V).. Figure. Quiescent Current per Channel vs. Supply Voltage. TEMPERTURE ( C) 6 8 Figure 3. Quiescent Current vs. Temperature OFFSET VOLTGE (mv) T = C T = C T = C OFFSET VOLTGE (mv) V S =.8 V V S =. V V S = 3.3 V SUPPLY VOLTGE (V) TEMPERTURE ( C) Figure. Offset Voltage vs. Supply Voltage Figure. Offset Voltage vs. Temperature OFFSET VOLTGE (mv) V S =. V units..... COMMON MODE VOLTGE (V). Figure 6. Offset Voltage vs. Common Mode Voltage.7 GIN (db) 8 6 Gain R L = k C L = pf T = C k k Phase Margin k M FREQUENCY (Hz) M 8 3 M Figure 7. Open loop Gain and Phase Margin vs. Frequency 9 PHSE MRGIN ( ) 8

9 NCS8//, NCV8// TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified 6 V S =. V R L = k T = C V S =. V f IN = khz V = PHSE MRGIN ( ) 3 THD+N (%) CPCITIVE LOD (pf) OUTPUT VOLTGE (Vpp) Figure 8. Phase Margin vs. Capacitive Load Figure 9. THD + N vs. Output Voltage 6 THD+N (%).. V = V S =.8 V V S = 3.3 V V S =. V VOLTGE NOISE (nv/ Hz) 3 V S =. V. k k k k k k FREQUENCY (Hz) FREQUENCY (Hz) Figure. THD + N vs. Frequency Figure. Input Voltage Noise vs. Frequency CURRENT NOISE (f/ Hz) FREQUENCY (Hz) k Figure. Input Current Noise vs. Frequency k V S =. V k PSRR (db) 8 6 V S =. V, PSRR+ V S =.8 V, PSRR+ V S =.8 V, PSRR V S =. V, PSRR k k FREQUENCY (Hz) k Figure 3. PSRR vs. Frequency M 9

10 NCS8//, NCV8// TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified CMRR (db) 8 6 V S =. V V S =.8 V V S = 3.3 V V = OUTPUT VOLTGE TO POSITIVE RIL (mv) 3 V S =.8 V V S = 3.3 V V S =. V k k k M 6 8 FREQUENCY (Hz) Figure. CMRR vs. Frequency OUTPUT CURRENT (m) Figure. Output Voltage High to Rail OUTPUT VOLTGE TO NEGTIVE RIL (mv) 3.. V S =.8 V 7... V S = 3.3 V V S =. V. VOLTGE (V) Input C L = pf C L = pf 6 OUTPUT CURRENT (m) TIME ( s) Figure 6. Output Voltage Low to Rail Figure 7. Non Inverting Small Signal Transient Response..8.6 Input C L = pf C L = pf..8.6 Input Output.. VOLTGE (V)... VOLTGE (V) TIME ( s) Figure 8. Inverting Small Signal Transient Response TIME ( s) Figure 9. Non Inverting Large Signal Transient Response

11 NCS8//, NCV8// TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified.. Input Output 6 VOLTGE (V) TIME ( s).. 7. Figure. Inverting Large Signal Transient Response. CURRENT (p) 3 6 TEMPERTURE ( C) 8 Figure. Input Bias and Offset Current vs. Temperature 6 I IB+ I IB I OS CURRENT (p) I IB+ IIB I OS VOLTGE ( V) COMMON MODE VOLTGE (V) Figure. Input Bias Current vs. Common Mode Voltage TIME (s) Figure 3.. Hz to Hz Noise 6 k CHNNEL SEPRTION (db) 8 OUTPUT IMPEDNCE ( ) k. V = V S =.8 V V S =. V k k k FREQUENCY (Hz) M Figure. Channel Separation vs. Frequency M. k k FREQUENCY (Hz) k Figure. Output Impedance vs. Frequency M

12 NCS8//, NCV8// TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified.6. SR+ SLEW RTE (V/ s)..3.. SR 6 8 TEMPERTURE ( C) Figure 6. Slew Rate vs. Temperature

13 NCS8//, NCV8// PCKGE DIMENSIONS SC 88 (SC 7 /SOT 33) CSE 9 ISSUE L S G B 3 D PL. (.8) M B M N NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: INCH OBSOLETE. NEW STNDRD 9.. DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. INCHES MILLIMETERS DIM MIN MX MIN MX B C D....3 G.6 BSC.6 BSC H J.... K....3 N.8 REF. REF S C J H K SOLDER FOOTPRINT SCLE : mm inches 3

14 NCS8//, NCV8// PCKGE DIMENSIONS X X. NOTE T. B. T B 3 H G TOP VIEW SIDE VIEW C D X. C B S C SETING PLNE J K TSOP CSE 83 ISSUE L DETIL Z END VIEW M DETIL Z NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. MXIMUM LED THICKNESS INCLUDES LED FINISH THICKNESS. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL.. DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED. PER SIDE. DIMENSION.. OPTIONL CONSTRUCTION: N DDITIONL TRIMMED LED IS LLOWED IN THIS LOCTION. TRIMMED LED NOT TO EXTEND MORE THN. FROM BODY. MILLIMETERS DIM MIN MX 3. BSC B. BSC C.9. D.. G.9 BSC H.. J..6 K..6 M S. 3. SOLDERING FOOTPRINT* SCLE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

15 NCS8//, NCV8// PCKGE DIMENSIONS UDFN6.6x.6,.P CSE 7P ISSUE O 6X X. C PIN ONE REFERENCE X. C. C D ÉÉ ÉÉ DETIL B. C DETIL 6X L TOP VIEW SIDE VIEW D 3 B E (3) C SETING PLNE L EXPOSED Cu L DETIL OPTIONL CONSTRUCTION DETIL B OPTIONL CONSTRUCTION MOLD CMPD 3 NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN. ND.3 mm FROM TERMINL.. COPLNRITY PPLIES TO THE EXPOSED PD S WELL S THE TERMINLS. MILLIMETERS DIM MIN MX REF b..3 D.6 BSC E.6 BSC e. BSC D..3 E..6 K. L.. L.. SOLDERMSK DEFINED MOUNTING FOOTPRINT*.6 6X K E 6 6X b e. C B BOTTOM VIEW. C NOTE 3 6X PITCH 6X.3 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

16 NCS8//, NCV8// PCKGE DIMENSIONS H E D E Micro8 CSE 86 ISSUE J NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION DOES NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. MOLD FLSH, PROTRUSIONS OR GTE BURRS SHLL NOT EXCEED. (.6) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLED FLSH OR PROTRUSION. INTERLED FLSH OR PROTRUSION SHLL NOT EXCEED. (.) PER SIDE OBSOLETE, NEW STNDRD 86-. PIN ID T SETING PLNE.38 (.) e b 8 PL.8 (.3) M T B S S c L MILLIMETERS INCHES DIM MIN NOM MX MIN NOM MX b c D E e.6 BSC.6 BSC L H E RECOMMENDED SOLDERING FOOTPRINT* 8X.8 8X.8..6 PITCH DIMENSION: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6

17 NCS8//, NCV8// PCKGE DIMENSIONS X B Y Z H 8 G D S C. (.) M Z Y S X S. (.) M SETING PLNE Y. (.) SOIC 8 NB CSE 7 7 ISSUE K M N X M K SOLDERING FOOTPRINT*..6 J NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ND B DO NOT INCLUDE MOLD PROTRUSION.. MXIMUM MOLD PROTRUSION. (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE.7 (.) TOTL IN EXCESS OF THE D DIMENSION T MXIMUM MTERIL CONDITION THRU 7 6 RE OBSOLETE. NEW STNDRD IS 7 7. MILLIMETERS INCHES DIM MIN MX MIN MX B C D G.7 BSC. BSC H.... J K M 8 8 N.... S STYLE : PIN. SOURCE. GTE 3. SOURCE. GTE. DRIN 6. DRIN 7. DRIN 8. DRIN SCLE 6: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

18 NCS8//, NCV8// PCKGE DIMENSIONS TSSOP 8 CSE 98S ISSUE C. (.8) T. (.8) T L U U.76 (.3) T SETING PLNE S PIN IDENT S D X L/ C 8 8x V K REF. (.) M T U S V S G B U J N DETIL E N J ÉÉÉÉ ÉÉÉÉ ÇÇÇÇ K K SECTION N N. (.) M W NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION DOES NOT INCLUDE MOLD FLSH. PROTRUSIONS OR GTE BURRS. MOLD FLSH OR GTE BURRS SHLL NOT EXCEED. (.6) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLED FLSH OR PROTRUSION. INTERLED FLSH OR PROTRUSION SHLL NOT EXCEED. (.) PER SIDE.. TERMINL NUMBERS RE SHOWN FOR REFERENCE ONLY. 6. DIMENSION ND B RE TO BE DETERMINED T DTUM PLNE -W-. MILLIMETERS INCHES DIM MIN MX MIN MX B C D....6 F G.6 BSC.6 BSC J J K K L 6. BSC. BSC M 8 8 F DETIL E 8

19 NCS8//, NCV8// PCKGE DIMENSIONS H 8. M B M e D 7 3X b B E. M C S B S C SETING PLNE SOIC NB CSE 7 3 ISSUE K DETIL h X M L 3 DETIL NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE PROTRUSION SHLL BE.3 TOTL IN EXCESS OF T MXIMUM MTERIL CONDITION.. DIMENSIONS D ND E DO NOT INCLUDE MOLD PROTRUSIONS.. MXIMUM MOLD PROTRUSION. PER SIDE. MILLIMETERS INCHES DIM MIN MX MIN MX b D E e.7 BSC. BSC H h....9 L M 7 7 SOLDERING FOOTPRINT* 6. X.8.7 PITCH X.8 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9

20 NCS8//, NCV8// PCKGE DIMENSIONS. (.6) T. (.6) T L. (.) T SETING PLNE U U S X L/ PIN IDENT. S D C G X K REF V. (.) M T U S V S 8 7 B U H N TSSOP CSE 98G ISSUE B N J J F DETIL E DETIL E. (.) K K M ÇÇÇ ÉÉÉ SECTION N N SOLDERING FOOTPRINT W NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION DOES NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. MOLD FLSH OR GTE BURRS SHLL NOT EXCEED. (.6) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLED FLSH OR PROTRUSION. INTERLED FLSH OR PROTRUSION SHLL NOT EXCEED. (.) PER SIDE.. DIMENSION K DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE.8 (.3) TOTL IN EXCESS OF THE K DIMENSION T MXIMUM MTERIL CONDITION. 6. TERMINL NUMBERS RE SHOWN FOR REFERENCE ONLY. 7. DIMENSION ND B RE TO BE DETERMINED T DTUM PLNE W. MILLIMETERS INCHES DIM MIN MX MIN MX B C..7 D....6 F G.6 BSC.6 BSC H..6.. J J K K L 6. BSC. BSC M PITCH X.36 X.6 DIMENSIONS: MILLIMETERS Micro8 is a trademark of International Rectifier ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FD Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. 3nd Pkwy, urora, Colorado 8 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCS8/D