High Voltage Power MOSFET & IGBTs. Ester Spitale

Transcription

1 High Voltage Power MOSFET & IGBTs Ester Spitale

2 ST HV Power MOSFETs: WW most complete offer 1500V 1000V 800V 600V 500V SuperMESH NK SuperMESH 3 K3 MDmesh II SuperMESH 5 K5 MDmesh V 200V Planar Super-junction Normalised R DS(on) x Area

3 ST Power MOSFET s: Nomenclature 3 ST x 42 N 65 M5 C = TSSOP8 T = SOT23-6L H = H 2 PAK (2 to 7 leads) R = PPAK Z = P 2 PAK Y= Max247 E = ISOTOP Q = TO-92 FW = TO-3PF N = SOT-223 L = PowerFLAT U = IPAK I = I 2 PAK S = SO-8 D = DPAK B = D 2 PAK P = TO-220/Pentawatt F = TO-220FP W = TO-247 PACKAGE INDICATIVE CURRENT RANGE BREAKDOWN VOLTAGE 10 (with the exception of non 10 multiples) CHANNEL POLARITY TECHNOLOGY SPECIAL FEATURES M5 = MDmesh V >200V K3 = SuperMESH3 >300V K5 = SuperMESH5 >900V up to 1500V T = Temperature Sensing C = Current Sensing Z = Clamped by Zener Diode V D = Fast Recovery Diode N = N- Channel P = P-Channel NS or PS = N-Ch or P-Ch plus Schottky Diode (electrically connected, monolithic included) DNS or DPS = N-Ch or P-Ch plus Schottky Diode (not electrically connected) N N = Two different N-Channel dice N P = Complementary pair DN or DP = Dual N-Ch or Dual P-Ch Insert All the TM

4 HV MOSFETs: 500V 700V

5 SuperMESH3 Abs. Max Ratings STD planar SuperMESH 3 V DSS 400V,450V,500V, 600V 400V,450V,525V, 600V,620V,650V Diode dv/dt, di/dt 4.5V/ns, 400A/µs Up to 12 V/ns,400A/µs V th 3V 4.5V 3V 4.5V P Source D.E. Substrate Body P Higher margin & robustness Higher ESD immunity HIGHER V DSS BtB G-S Zeners Higher dv/dt REDUCED Trr Improved DYNAMIC (Qg Ciss, Crss) Lower switching losses

6 SuperMESH3 Improved dynamic SuperMESH3 Vs equivalent planar device Ciss Coss Crss SuperMESH Other Planar (similar R dson ) Device: STx6N62K3 Conditions : Vds=25V ; f=1mhz ; Vgs=0V ; Tj=25 C SuperMESH3 Features Lower Gate Charge Benefits Lower Switching losses Lower gate driving losses Same R DS(on) planar techno

7 Why use an ST HV Power MOSFETs!! R DS(on) State-of-the-art MDmesh V MDmesh II Best cost/performance compromise

8 ST HV Power MOSFETs: WW most complete offer >50 different 600/650V R DS(on) specs from 1.8Ω down to 17mΩ R DS(on) State-of-the-art consolidated technologies high power in innovative packaging among leaders in FReD MOSFETs 300Mpcs sold during 2011 extremely fast time-tomarket MDmesh II Best cost/performance compromise MDmesh V

9 Multiple Drain mesh Evolution DIFFERENCES - Pitch - Concentration drain n - Ron * Area Key features Low R DS(on) up to 40% less vs MDmesh I Small Qg,Ciss,Coss,Crss Very robust in dv/dt 0.36Ohm in DPAK 600V BEST in Class Key features 650 V lowest R DS(on) x area Higher breakdown voltage MDmesh V targeted for best efficiency in the application Main benefits Main benefits Extremely Low Power Losses Higher current at lower Vgs Avalanche Ruggedness Higher energy saving Increased power density Increased safety margin

10 MDmeshII: Product range extension BVDss R DS(on) (max) [Ω] Sales Type Package Status STx3NM60N PowerFLAT3.3x3.3 Samples STx7NM60N STx9NM60N STx10NM60N DPAK / IPAK TO STx13NM60N 600V STx18NM60N STx22NM60N STx24NM60N STx26NM60N STx34NM60N STW48NM60N STW56NM60N STW62NM60N D²PAK TO-247 TO-220/FP TO-247 Full Production Samples 700V STx13NM70N TO-220/FP Samples

11 MDmeshV New MDmeshV devices with improved R ds(on) ST able to beat his record for new concept devices: 29mΩ 650V 63mΩ 650V 220mΩ 650V Best Competition: 650V 37mΩ Best Competition: 650V 74mΩ Best Competition: 650V 250mΩ

12 MDmesh V: NEW product range Sales Type R DS(on) Package Samples Mass Production STY139N65M Max247 available May 2012 STW88N65M available production TO-247 STW69N65M available production STx57N65M available May V STx45N65M available production STx38N65M TO-220 D ² PAK I ² PAK available production STx34N65M May 2012 June 2012 STx31N65M available May 2012 STx18N65M TO-220 available June 2012 STx15N65M TO-247 DPAK May 2012 May 2012 STx11N65M IPAK available production

13 Very HV: 900V 1700V

14 VHV MOSFETs: SuperMESH Roadmaps V to 2200V SuperMESH 5 (Extension up to 2200V) 850V to 1200V SuperMESH 5 950V to 1200V SuperMESH Eng. samples Maturity

15 SuperMESH 5: Very HV SJ revolution Key features 900V-1200V lowest R DS(on) x area Lowest FOM (R DS(on) *Q g ) Designed for best efficiency STL23N85K5 850V 0.275Ω PowerFLAT8x8 STD6N95K5 950V 1.250Ω DPAK STP20N95K5 950V 0.330Ω TO-220 STFW6N V 0.690Ω TO-3PF Main benefits Higher energy saving Faster switching speed Increased safety margin TO-3PF PowerFLAT 8x8 TO-3PF for higher creepage

16 R DS(on) MAX (Ω) SuperMESH 5: best in class FoM = R DS(on) Q g (Ω nc) 0,299 0, STP21N90K5 Best Competitor STP21N90K5 900V TO-220 Benchmark Best Competitor

17 SuperMESH 5: best in class Targets* by Package/Voltage R DS(on) MAX (mω) 950V 1050V 1200V ISOTOP Max TO TO-3PF TO DPAK Production Samples In development * Simulated data

18 SuperMESH 3 & 5 very HV series Very first available specs: V DS [V] R DS(on) (max) [Ω] P/N Package Samples Production 1.2 STx7N80K5 DPAK/IPAK STx8N80K5 TO-220/TO-220FP/TO STx12N80K5 TO-220/TO-220FP/TO STx25N80K5 TO-220/TO-220FP/TO-247 Q Q STL23N85K5 PowerFLAT 8x8 HV Available Q STx21N90K5 TO-220/TO-220FP/TO STx6N95K3 DPAK/IPAK/TO-220/TO-220FP/ TO STx13N95K3 TO-220/TO-220FP/TO STW25N95K3 TO-247 Available Production STx20N95K5 TO-220/TO-220FP/TO STx1N105K3 DPAK/TO-220 End Q STx6N120K3 TO-220/TO-3PF/TO STx12N120K5 TO-220/TO-3PF/TO-247 Q Q3 2012

19 VHV MOSFETs for 3-ph aux. SMPS 19 Main Benefits Specifically targeted for 3-Ф aux. SMPS PV inverter Welding Industrial Drvies High reliability makes each solution stronger Wide choice of packages, including new fully isolated TO-3PF, for easier solution V DS [V] P/N R DS(on) (max) [Ω] Packages TO-3PF Higher creepage for electrical insulation STW9N TO STx4N150 7 TO-247/ TO-3PF/TO-220/H2PAK STx3N150 9 TO-247/ TO-3PF/TO-220/H2PAK 1700 STx3N170* 13 TO-247/ TO-3PF/TO-220 * By Q

20 About Packages 20

21 PowerFLAT The smart solution to reduce space Space Tickness Weight Simplicity Area Thickness 4.5mm 2.3mm 1mm 150 mm 2 64 mm 2 D²PAK DPAK PowerFLAT8x8

22 PowerFLAT 3.3 x 3.3 HV INNOVATION IN PACKAGES This innovative HV, 1 mm high, surface-mount package, featured both with ST s 600V MDmesh II and MDmesh V technologies, increases power density reducing thickness and weight Features Maximum thickness: 1 mm Unequalled low RDS(on) x area Clearance / Creepage distance: 1.4 mm Benefits Compactness Higher power density

23 PowerFLAT product range 3x3 HV P/N V DS [V] R DS(on) (max) [Ω] Status STL3NM60N Samples Available STL3N65M Q3 12 Samples P/N V DS [V] R DS(on) (max) [Ω] Status 5x5 HV STL3NK Full Production STL7NM60N Full Production STL11N65M Q3 12 Samples

24 PowerFLAT product range P/N V DS [V] R DS(on) (max) [Ω] Status 5x6 HV STL5N52K Upon Request STL4N62K Upon Request STL12N65M Samples in Q3 12 STL15N65M Samples in Q3 12 STL18N65M Samples in Q3 12 STL20N65M Samples in Q3 12 STL7N80K Samples in Q3 12 STL8N80K Samples in Q4 12

25 P/N PowerFLAT 8x8 product range V DS [V] R DS(on) (max) [Ω] Status STL18N55M STL36N55M Samples available by Q3 12 STL23NM60ND STL26NM60N STL24NM60N Full Production STL18NM60N STL13NM60N STL57N65M Samples available by Q3 12 STL31N65M Samples available by Q3 12 STL22N65M Samples available by Q STL18N55M Samples available by Q3 12 STL19N65M Samples available by Q3 12 STL17N65M Samples available by Q3 12 STL23N85K Samples available

26 IGBT technologies 26

27 IGBT: Nomenclature for New Products 27 STG x 60 H 65 y DD Fy TECHNOLOGY Fx = Trench Gate Field Stop P = Planar PT PACKAGE DIODE FEATURES D = Very Fast Recovery DR = Ultra Fast Recovery DL = Low Forward Voltage B = D 2 PAK D = DPAK E = ISOTOP F = TO-220FP FW = TO-3PF I = I 2 PAK L = PowerFLAT TM (8x8) P = TO-220 U = IPAK (-S for short leads) W = TO-247 WA = TO-247 LL WT = TO-3P Y = Max247 SPECIAL FEATURES BREAKDOWN VOLTAGE 10 TECHNOLOGY SERIES Exception (if any ) C = Current Sensing T = Temperature Sensing Z = Clamped by Zener Diode L = Logic Level H = High speed (8 30 khz) V = Very High speed ( khz) M = Low Loss ( up to 20 khz) MAX CONTINUOUS 100 C

28 Trench Gate Field Stop IGBT: Suitable for high voltage and high current applications Features Low E OFF due to improved minority carrier recombination (Field Stop ) Positive Temperature coefficient in V CE(sat) resulting in a safer paralleling operation Main Applications PhotoVoltaic Uninterruptable Power Supply Welding emitter gate Low V CE(sat) (Trench gate) Power Factor Corrector High switching robusteness (Large SOA) Low RTH (Thin wafer thickness) Hybrid Electric Veichles Induction Heating collector

29 1200V IGBT TFS High Frequency series MAT 20 STGW25H120DF Product Features: IGBT in Trench Gate Field Stop Technology 1200V break down rated Final die thickness: 110µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Preliminary Results (on packaged parts) Symbol Characteristic Typical Value 25 C 150 C BV CES Collector to Emitter breakdown voltage 1200 V V CESAT V GE = 15V, I C = 25A V E OFF V CC =600V, V GE =15 0V, R GOFF =22Ω, I C =25A mj Simulated benchmark based on datasheet values Unit Topology: Full Bridge Main Specs: P Out =3kW, f Sw =20kHz, D Max =90%, Î Out 20A, T j =125ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW25H120DF 100 C Competitor C Competitor C Competitor C Samples Available (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode

30 MAT V IGBT TFS High Frequency Final Results (on packaged parts) series STGW60H65DF Product Features: IGBT in Trench Gate Field Stop Technology 650V break down rated Final die thickness: 80µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Symbol BV CES Characteristic Collector to Emitter breakdown voltage Typical Value 25 C 150 C Unit 650 V V CESAT V GE = 15V, I C =60A V E OFF V CC = 400V, V GE = 15V 0, R G = 10Ω, I C = 60A mj Simulated benchmark based on datasheet values Topology: Full Bridge Main Specs: P out =5kW, f sw =16kHz, D Max =90%, Î Out 30A, T J =150ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW60H65DF 100 C Competitor C Competitor C Competitor C (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode

31 600V/650V Discrete IGBT Product Plan H series (8 30 khz) 31 BV CES` I CN 1) V I CN Short Circuit 2) Sales Type Main Applications Packages Eng. Samples Production 600 V 20 A 1.6 V 6 µs STGP20H60DF 30 A 1.9 V 6 µs STGP30H60DF UPS, PFC, motor control UPS, PFC, motor control TO-220, FP Available Production TO-220, FP, TO-247 Available Production 650 V 60 A 1.9 V 6 µs STGW60H65DF Solar, UPS, PFC TO-247 Available Production 60 A 1.9 V 6 µs STGW60H65DRF Solar, UPS, PFC TO-247 Available Production 1) continuous I 100 C 2) Test condition V CC = 400V, V GE = 15V, T Jstart = 25 C T JMAX = 175 C

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