Electro-optic phase matching in a Si photonic crystal slow light modulator using meanderline electrodes
|
|
- Moses Flynn
- 5 years ago
- Views:
Transcription
1 ol. 26, No Apr 2018 OPTICS EXPRESS Electro-optic phase matching in a Si photonic crystal slow light modulator using meanderline electrodes YOSUKE HINAKURA,* YOSUKE TERADA, HIROYUKI ARAI, AND TOSHIHIKO BABA Department of Electrical and Computer Engineering, Yokohama National University, 79-5Tokiwadai, Hodogaya-ku, Yokohama , Japan *hinakura-yosuke-zm@ynu.jp Abstract: We demonstrate a Si photonic crystal waveguide Mach Zehnder modulator that incorporates meander-line electrodes to compensate for the phase mismatch between slow light and RF signals. We first employed commonized ground electrodes in the modulator to suppress undesired fluctuations in the electro-optic (EO) response due to coupled slot-line modes of RF signals. Then, we theoretically and experimentally investigated the effect of the phase mismatch on the EO response. We confirmed that meander-line electrodes improve the EO response, particularly in the absence of internal reflection of the RF signals. The cut-off frequency of this device can reach 27 GHz, which allows high-speed modulation up to 50 Gbps Optical Society of America under the terms of the OSA Open Access Publishing Agreement OCIS codes: ( ) Integrated optics devices; ( ) Modulators; ( ) Photonic crystal waveguides. References and links G. T. Reed, G. Z. Mashanovich, F. Y. Gardes, and D. J. Thomson, Silicon optical modulators, Nat. Photonics 4(8), (2010). D. J. Thomson, F. Y. Gardes, S. iu, H. Porte,. Zimmermann, J. M. Fedeli, Y. Hu, M. Nedeljkovic, X. Yang, P. Petropoulos, and G. Z. Mashanovich, High Performance Mach-Zehnder-Based Silicon Optical Modulators, IEEE J. Sel. Top. Quantum Electron. 19(6), (2013). H. Xu, X. i, X. Xiao, Z. i, Y. Yu, and J. Yu, Demonstration and Characterization of High-Speed Silicon Depletion-Mode Mach Zehnder Modulators, IEEE J. Sel. Top. Quantum Electron. 20(4), (2014). X. Tu, K. F. Chang, T. Y. iow, J. Song, X. uo,. Jia, Q. Fang, M. Yu, G. Q. o, P. Dong, and Y. K. Chen, Silicon optical modulator with shield coplanar waveguide electrodes, Opt. Express 22(19), (2014). H. Yu and W. Bogaerts, An Equivalent Circuit Model of the Traveling Wave Electrode for Carrier-DepletionBased Silicon Optical Modulators, J. ightwave Technol. 30(11), (2012). J. Shin, S. R. Sakamoto, and N. Dagli, Conductor oss of Capacitively oaded Slow Wave Electrodes for High-Speed Photonic Devices, J. ightwave Technol. 29(1), (2011). R. Ding, Y. iu, Y. Ma, Y. Yang, Q. i, A. E. J. im, G. Q. o, K. Bergman, T. B. Jones, and M. Hochberg, High-Speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive, J. ightwave Technol. 32(12), (2014). D. Patel, S. Ghosh, M. Chagnon, A. Samani,. eerasubramanian, M. Osman, and D.. Plant, Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator, Opt. Express 23(11), (2015). Y. Terada, T. Tatebe, Y. Hinakura, and T. Baba, Si Photonic Crystal Slow-ight Modulators with Periodic p n Junctions, J. ightwave Technol. 35(9), (2017). Y. Hinakura, Y. Terada, T. Tamura, and T. Baba, Wide spectral characteristics of Si photonic crystal MachZehnder modulator fabricated by complementary metal oxide semiconductor process, Photonics 3(2), 17 (2016). K. Hojo, Y. Terada, N. Yazawa, T. Watanabe, and T. Baba, Compact QPSK and PAM modulators with Si photonic crystal slow light phase shifters, IEEE Photonics Technol. ett. 28(13), (2016). T. Tamura, K. Kondo, Y. Terada, Y. Hinakura, N. Ishikura, and T. Baba, Silica-clad silicon photonic crystal waveguides for wideband dispersion-free slow light, J. ightwave Technol. 33(7), (2015). K. Kubota, J. Noda, and O. Mikami, Traveling wave optical modulator using a directional coupler inbo3waveguide, IEEE J. Quantum Electron. 16(7), (1980). I. Kim, M. R. T. Tan, and S. Y. Wang, Analysis of a new microwave low-loss and velocity-matched III- transmission line for traveling-wave electrooptic modulators, J. ightwave Technol. 8(5), (1990). # Journal Received 9 Mar 2018; revised 16 Apr 2018; accepted 17 Apr 2018; published 19 Apr 2018
2 ol. 26, No Apr 2018 OPTICS EXPRESS G. E. Ponchak, J. Papapolymerou, and M. M. Tentzeris, Excitation of coupled slotline mode in finite-ground CPW with unequal ground-plane widths, IEEE Trans. Microw. Theory Tech. 53(2), (2005). 1. Introduction Silicon (Si) photonics have become a standard platform for integrating functional photonic devices with optical interconnects owing to the strong optical confinement of Si waveguides, high accuracy, reproducible, and low cost mass production using complementary metal oxide semiconductor (CMOS) processing. For their use as optical interconnects, modulators with high speed, small size, low loss, low power consumption, and large operating wavelength and temperature tolerances are important. Mach Zehnder modulators (MZMs) exploit carrier depletion in p-n doped Si rib waveguides. These devices allow high speed and large tolerances in wavelength and temperature [1 8] and have been used in commercial systems because of these practical advantages. However, they require a long phase shifter of the order of several millimeters, which increases the device size and power consumption. Our research group has studied photonic crystal waveguide (PCW) MZMs, which enhance the phase shift Δφ in proportion to the slow-light group index n g. This allows a reduction in the length of the phase shifter, which also reduces power consumption [9 11]. A PCW can produce a wide range of n g from <10 to ~100 by structural tuning [12]. The group index can be set between 20 and 30 to balance the advantages of slow light, a sufficiently wide working spectrum, and moderately low propagation loss. This value is five to seven times larger than n g in Si rib waveguides. attice-shifted PCWs (SPCWs), which feature specific rows of holes that are shifted in the photonic crystal slab along the waveguide, can produce low dispersion slow light over a wide working spectrum of Δλ = nm. By employing a wavy p-n junction, a large phase shift Δφ can be obtained with a fast operating speed. 32 Gbps modulation has been obtained with an extinction ratio ER = 3 db and an excess modulation loss M = 1 db using a phase shifter of length = 200 μm and drive voltage pp = 1.75 [9]. A large value of the group index potentially reduces the operating voltage, but it simultaneously degrades the frequency response because of the electro-optic (EO) phase mismatch [10]. The modal index for an RF signal, n RF, ranges from 2 to 6 [4,5,7], which is much different from n g 20 for slow light. Therefore, the phase of the modulated slow light deviates from the RF signal phase as the waves propagate. The mismatch becomes large as the frequency increases, ultimately degrading the frequency response. Several studies have discussed the compensation of the phase mismatch in MZMs based on Si, inbo 3, and III- semiconductors [6 8,13,14]. One may consider to use capacitively-loaded slow-wave electrodes, which has been studied for phase or impedance matching [6 8]. However, n RF in these electrodes is 6 at most, which is not sufficiently high to offset the phase mismatch. An increasingly efficient phase matching scheme is needed to use slow light in MZMs at high operating speeds. In addition, we have previously observed a peculiar local minimum in the frequency response of such devices [10]. This minimum is likely caused by unwanted coupled slot-line (CS) modes in the RF signal, which are excited owing to the imbalance of the electric potential between the ground (G) electrodes placed on both sides of the central signal (S) electrode [15]. This dip must be suppressed because it obscures the EO phase mismatch, which makes compensating for that mismatch increasingly difficult. Xu et al. suppressed this minimum by commonizing the ground electrodes with wire bonding [3]. The device proposed in this paper employs meander-line electrodes to suppress the phase mismatch and improve the frequency response of a Si photonic crystal slow light MZM. The meander-line electrodes delay the RF signals by simply extending the electrode length. In the device s preparation, we first discuss an experimental test that confirms that commonized ground electrodes suppress the unwanted spectral local minimum, and then we focus on a design that compensates for the phase mismatch between the RF and slow light signals. We theoretically and experimentally determine the manner in which the frequency response is degraded by the phase mismatch and the manner it is compensated by the meander-line
3 ol. 26, No Apr 2018 OPTICS EXPRESS electrodes. We finally optimize the meander-line electrodes considering the reflection of RF signals at the ends of the phase shifters. 2. Device fabrication We fabricated prototypes using a standard Si photonics CMOS process with a 200-mmdiameter silicon-on-insulator (Si thickness of 210 nm), KrF excimer laser exposure (λ = 248 nm), and phase shift masks with resolution less than 130 nm. Figure 1 shows the p-n doped and SiO 2 -cladded PCW MZMs that were fabricated. The Al coplanar waveguide (CPW) comprises a signal electrode and a pair of ground electrodes sandwiching the signal electrode. Termination resistors were not included in the design to simplify the device layout. In device (a), the ground electrodes are independent, while in devices (b) and (c), they were commonized. We used PCWs without lattice shifts to take advantage of the gradually increasing n g spectrum, which allows us to test a range of slow light group indices by varying the wavelength. We set the lattice constant a = 400 nm, the hole diameter 2r = 190 nm or 220 nm, and phase shifter length = 200 μm. The design also employs a simple linear p-n junction. Although the interleaved and wavy junctions we have studied in the past effectively increase Δφ [9], a linear junction is appropriate for evaluating the phase mismatch because the frequency response is constrained less by the RC time constant. The p- and n-type doping concentrations were N A = cm 3 and N D = cm 3, respectively. p + and n + doping was performed for the metal contacts at a concentration of N A + = N D + = cm 3. The doping sites were spaced at 4-µm intervals across the p-n junction to avoid strong free carrier absorption. Also, 36.5-μm long TiN heaters were integrated inside the SiO 2 cladding above the PCWs so that we could tune the initial phase using the thermo-optic effect. Fig. 1. Fabricated Si PCW MZMs. (a) Normal electrode device without commonizing grounds.in the inset, the p- and n-doped regions are colored. (b) Normal electrode device with commonized grounds. (c) Meander-line electrode device with commonized grounds. Insets show the details of a bend in the meander-line electrode and the separated p-n junction. For device (c), we introduced meander-line electrodes of length d and RF index n d as the signal electrodes in the CPWs. Similar to the electrodes at the PCW phase shifter, the Si layer was left intact and a metal contact was formed below the meander-line electrode. However, n d is different from n RF because of the no doping in this region; we assumed n d = 2 and n RF = 4, referring to [7]. The phase mismatch at the end of the phase shifter was given by δφ = 2πf [(n g n RF ) n d d ]/c. where f is the frequency of RF signals. We set d = 1186 μm to make δφ =
4 ol. 26, No Apr 2018 OPTICS EXPRESS when n g = 15.9 for slow light. Although the device footprint is increased by these electrodes, it is still much smaller than rib waveguide devices, and its width is comparable to the total width of probe pads. In the meander-line electrodes, we placed a corner reflector at each bend, which minimizes the impedance change and suppresses the reflection of RF signals. We separated the p-n junctions before and after the meander-line electrodes to maintain the continuity of the PCW and Si slab so that the waveguide loss is almost the same as it is for devices (a) and (b). The typical on-chip loss of a 200-μm p-n doped PCW is ~5 db, including the coupling loss from Si-wire waveguides [9,10]. 3. Ground commonization To test the effects of the commonized ground electrodes, we measured the reflection parameter S 11 using an RF vector network analyzer (NA, Anritsu R), as shown in Fig. 2(a). At low frequencies, S 11 is close to 0 db; this means that the reflection is nearly complete owing to the absence of electrical termination. At high frequencies, S 11 decreased owing to the loss of the RF signals. Without ground commonization, a local minimum and maximum were observed at f = 17 GHz and f = 23 GHz, respectively. We previously found that the frequency of this maximum corresponds to a minimum in the EO frequency response [10] and that it is similar to the minimum caused by the CS mode [3]. In the two groundcommonized devices, the minimum and maximum disappeared and the response was smooth, thus indicating that the CS mode was suppressed. Comparing the two ground-commonized devices, the S 11 of the meander-line electrode device was db lower than that of the normal electrode device. This difference might be explained by the transmission loss over the round trip of RF signals in the long delay line, including the sum of weak radiation from the 24 bends. We also consider that the leakage current between the signal and ground electrodes in the delay line may contribute to this difference. However, the excess loss of one-way transmission is 1.5 db/2 = 8% at the most. 4. Theoretical electro-optical response Fig. 2. Measured S 11 of fabricated devices. Next, we theoretically analyze the EO frequency response of the modulator. Figure 3 shows transmission models of the two types of electrodes that were tested. When we define the voltages of forward and backward propagating waves as f and b, the voltage (z,f) at position z and frequency f is expressed as follows: ( z, f) = e + e, (1) f γz γz b γ = α + jβ, and (2) RF 2π fn c RF β =, (3) RF
5 ol. 26, No Apr 2018 OPTICS EXPRESS Fig. 3. Calculation model of (a) normal electrode device, and (b) meander-line electrode device. where γ, α and β RF are the complex propagation constant, attenuation constant, and propagation constant of RF signals, and c is the speed of light. Considering the RF reflectivities at the start and end points of the phase shifter, Γ g and Γ, for the model in Fig. 3(a), (z,f) is represented as follows: γz γz 2γ γz γz 2γ ( +Γ ) ( +Γ ) Z e e Z e e ( z, f) = = in g 0 g 2 2 ( )(1 ) ( )(1 ), γ γ Z + Z +Γ e Z + Z Γ Γ e g in 0 g g (4) Z Z Z Z Γ = Γ = Z + Z Z + Z 0 g 0, and g 0 g 0, (5) Z 1+Γ e 2γ = Z in 0 2γ 1 Γ e, (6) where Z g is the internal impedance of the signal generator, Z 0 is the characteristic impedance of the phase shifter, and Z in is the impedance on the right side from z = 0. From the velocity difference between RF signals and slow light pulses, the effective voltage for modulating the slow light, eff, is represented as follows: ( jβo γ) z ( jβo + γ) z 2γ +Γ 0 g Z e e ( z, f) = ( )(1 ) eff 2γ Z + Z Γ Γ e 0 g g and (7) 2π fn g β = (8) o To calculate the modulation depth over the entire phase shifter, we derive the average voltage ave as follows [5,13,14]: c jϕ+ jϕ 2γ ( sin cϕ +Γ sin cϕ + ) dz Z e e e 0 eff 0 g ( f) = = ave 2γ Z + Z Γ Γ e 0 g g ( )(1 ) and (9) ( β jγ o ) = (10) ± ϕ ± 2 Furthermore, we consider the p-n doped PCW as a simple RC circuit consisting of the series electrical resistance R pn and capacitance C pn at the p-n junction. The appropriate transfer function G(f) is represented as follows: 1 G( f) = (11) 1 + j2 π f( Z + R ) C g pn pn
6 ol. 26, No Apr 2018 OPTICS EXPRESS We define the frequency response of the average voltage, η(f), as follows: The EO response S 21 is represented as follows: ave η ( f ) = (12) ave ( f) G( f) (0) G(0) S ( f)[db] = 20 log η( f) (13) For the meander-line electrode device in Fig. 3(b), we consider the phase changes before (0 z /2) and after the middle of the line (/2 z ) separately and assume that in the delay line as φ d. The effective voltages eff1 and eff2 are shown as ( z, f ) ( jβo γ) z { +Γ 0 g ( jβo + γ) z 2γ j2ϕd} Z e e = eff 1 2γ j2ϕd ( Z + Z )(1 Γ Γ e ) 0 g g ( z, f ) ( jβo γ) z jϕd 0 g{ +Γ ( jβo + γ) z 2γ jϕd} Z e e = eff 2 2γ j2ϕd ( Z + Z )(1 Γ Γ e ) 0 g g 2π fn (0 z / 2) (14) ( /2 z ) (15) d d ϕ = (16) d From Eqs. (14) and (15), similar to the normal electrode, we derive the following: c /2 ( ) dz dz 0 eff1 /2 eff2 f = + ave /2 /2 (17) jϕ+ j3ϕ+ jϕ j3ϕ+ jϕd ϕ j2ϕ 2 d jϕd 2 2 γ ϕ Z e + e sin c +Γ e e + e sin c 0 g 2 2 = 2γ j2ϕd 2( Z + Z )(1 Γ Γ e ) 0 g g The EO frequency responses are calculated from Eqs. (9) and (18) with c = m/s and = 200 μm. We set R pn = 60 Ω and C pn = 50 ff, as obtained from the previously reported simulations [9], n RF = 4 and n d = 2 [4,5,7], considering the doping and un-doping in the phase shifter and delay line, respectively, and neglecting the attenuation, i.e., α = 0, and reflection at z = 0, i.e., Γ g = 0. We assume Z 0 and Z g to be independent of the frequency so that their effect is eliminated by the normalization in Eq. (11). Figures 4(a) and 4(b) show the results for the normal electrode devices with Γ = 1 and Γ = 0, respectively. S 21 is degraded as the value of n g increases. A sharp dip appears at f = 38 GHz for n g = 40, and it shifts to a low frequency for a large value of n g. This dip is caused by the inversion of eff against the modulated light in the phase shifter. No marked differences are observed between Γ = 1 and Γ = 0, except the different depths of the dip and the slight improvement of the response with Γ = 0. Figures 4(c) and 4(d) show the results for the meander-line device with d = 1186 μm. The dip appears at f < 40 GHz even if n g = 55. This shows that the delay line effectively compensates for the phase mismatch. The response is particularly improved when Γ = 0. For example, the response of the meander-line device with n g = 35 appears to be the same as that of the normal electrode devices with n g = 22. Even when Γ = 1, the response is improved by the meander line at f > 30 GHz, but a slow valley appears at f = GHz, which degrades the cut-off frequency f 3dB. This slow valley is caused by the cancelation of forward and backward RF signals, which is made increasingly evident owing to the large phase shift in the delay line. Figure 5 summarizes f 3dB for various Γ. When Γ > 0.25, f 3dB decreases as d increases; therefore, the meander-line electrodes degrade performance somewhat. When Γ 0.25, f 3dB (18)
7 ol. 26, No Apr 2018 OPTICS EXPRESS shows a maximal value for certain d. For Γ = 0 and d = 0.8 mm, f 3dB = 27 GHz is possible, which allows for 50 Gbps modulation. Fig. 4. Calculated S 21 of the EO frequency response for = 200 μm, α = 0, Γ g = 0, n RF = 4. (a), (b) Normal electrode device. (c), (d) Meander-line electrode device of d = 1186 μm, n d = 2. (a), (c) Γ = 1, (b), (d) Γ = 0. Fig. 5. Calculated f 3dB for = 200 μm, Γ g = 0, n d = 2, n RF = 4, n g = 20, and various Γ. 5. Measurement of electro-optical response While measuring the EO frequency responses, we applied small amplitude sinusoidal signals to a single channel of the fabricated ground-commonized devices from the NA through a bias tee and an RF probe. Modulated light was input to an OE converter (Anritsu MN4765, >70 GHz) after passing through an erbium-doped fiber and a tunable band pass filter (BPF), after which the signal was returned to the NA. The optical phase difference between the two arms of the device was tuned to 90 by the TiN heaters. Figures 6(a) and 6(b) show the results for the normal electrode device and the corresponding n g spectrum as measured via the modulation phase shift method using a dispersion analyzer (Alnair abs CDA2100). n g changed from 22 to a value higher than 70 over the measured wavelength range. The spectral dip caused by the phase mismatch did not appear in the range n g < 32, while it appeared for n g > 34, which is consistent with our calculations. Figures 6(c) and 6(d) show the results for the
8 ol. 26, No Apr 2018 OPTICS EXPRESS meander-line device. The dip caused by the phase mismatch was suppressed up to n g = 69, while the slow valley appeared at f = GHz. These results were consistent with the calculation for Γ = 1, which is the case in the fabricated device with no electrical terminations. 6. Conclusion Fig. 6. (a), (c) Measured EO frequency response and (b), (d) corresponding n g spectrum. (a), (b) Normal electrode device, (c), (d) Meander-line electrode device. DC = 2. In this paper, we proposed a PCW MZM with meander-line electrodes that suppress the phase mismatch between slow light and RF signals. While preparing this device, we first measured the frequency response of devices fabricated with Si photonics CMOS processing and confirmed that the CS mode of RF signals that deforms the frequency response is suppressed by commonizing the ground electrodes. We also confirmed that the one-way transmission loss of the meander-line electrode is as low as 0.75 db. Then, we theoretically compared devices with normal and meander-line electrodes and concluded that the meanderline device achieves a high cut-off frequency at 27 GHz, which will allow operation at 50 Gbps. We confirmed a clear correspondence between our theoretical expectation and preliminary experimental results. In the measurements, the emergence of a slow valley caused by the reflection of RF signals slightly degraded the cut-off frequency. We aim to achieve a sufficiently high cut-off frequency by optimizing the electrode terminations, which we leave for future work. Some groups have already demonstrated high speed devices over 40 Gbps in Si photonics, but they used a phase shifter of as long as mm having a large optical loss of 9 15 db [2,3]. We expect our device to achieve 50 Gbps operation with a much shorter phase shifter of 200 μm and a moderate loss of ~6 db [9,10]. Funding New Energy and Industrial Technology Development Organization (NEDO) (project #P13004).
Plane wave excitation by taper array for optical leaky waveguide antenna
LETTER IEICE Electronics Express, Vol.15, No.2, 1 6 Plane wave excitation by taper array for optical leaky waveguide antenna Hiroshi Hashiguchi a), Toshihiko Baba, and Hiroyuki Arai Graduate School of
More informationOPTICAL interconnects have been used in highperformance
1684 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 35, NO. 9, MAY 1, 2017 Si Photonic Crystal Slow-Light Modulators with Periodic p n Junctions Yosuke Terada, Member, IEEE, Tomoki Tatebe, Yosuke Hinakura, and
More informationHitless tunable WDM transmitter using Si photonic crystal optical modulators
Hitless tunable WDM transmitter using Si photonic crystal optical modulators Hiroyuki Ito, Yosuke Terada, Norihiro Ishikura, and Toshihiko Baba * Department of Electrical and Computer Engineering, Yokohama
More information50-Gb/s silicon optical modulator with travelingwave
5-Gb/s silicon optical modulator with travelingwave electrodes Xiaoguang Tu, 1, * Tsung-Yang Liow, 1 Junfeng Song, 1,2 Xianshu Luo, 1 Qing Fang, 1 Mingbin Yu, 1 and Guo-Qiang Lo 1 1 Institute of Microelectronics,
More informationLow-voltage, high speed, compact silicon modulator for BPSK modulation
Low-voltage, high speed, compact silicon modulator for BPSK modulation Tiantian Li, 1 Junlong Zhang, 1 Huaxiang Yi, 1 Wei Tan, 1 Qifeng Long, 1 Zhiping Zhou, 1,2 Xingjun Wang, 1,* and Hequan Wu 1 1 State
More informationHigh-Speed Optical Modulators and Photonic Sideband Management
114 High-Speed Optical Modulators and Photonic Sideband Management Tetsuya Kawanishi National Institute of Information and Communications Technology 4-2-1 Nukui-Kita, Koganei, Tokyo, Japan Tel: 81-42-327-7490;
More informationPerformance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects
Indian Journal of Pure & Applied Physics Vol. 55, May 2017, pp. 363-367 Performance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects Priyanka Goyal* & Gurjit Kaur
More informationSilicon Carrier-Depletion-Based Mach-Zehnder and Ring Modulators with Different Doping Patterns for Telecommunication and Optical Interconnect
Silicon Carrier-Depletion-Based Mach-Zehnder and Ring Modulators with Different Doping Patterns for Telecommunication and Optical Interconnect Hui Yu, Marianna Pantouvaki*, Joris Van Campenhout*, Katarzyna
More informationMICRO RING MODULATOR. Dae-hyun Kwon. High-speed circuits and Systems Laboratory
MICRO RING MODULATOR Dae-hyun Kwon High-speed circuits and Systems Laboratory Paper preview Title of the paper Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator Publication
More informationECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016
ECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016 Lecture 9: Mach-Zehnder Modulator Transmitters Sam Palermo Analog & Mixed-Signal Center Texas A&M University Mach-Zehnder
More informationCharacterization of Photonic Structures with CST Microwave Studio. CST UGM 2010 Darmstadt
Characterization of Photonic Structures with CST Microwave Studio Stefan Prorok, Jan Hendrik Wülbern, Jan Hampe, Hooi Sing Lee, Alexander Petrov and Manfred Eich, Institute of Optical and Electronic Materials
More informationAll-Optical Signal Processing and Optical Regeneration
1/36 All-Optical Signal Processing and Optical Regeneration Govind P. Agrawal Institute of Optics University of Rochester Rochester, NY 14627 c 2007 G. P. Agrawal Outline Introduction Major Nonlinear Effects
More informationS-band gain-clamped grating-based erbiumdoped fiber amplifier by forward optical feedback technique
S-band gain-clamped grating-based erbiumdoped fiber amplifier by forward optical feedback technique Chien-Hung Yeh 1, *, Ming-Ching Lin 3, Ting-Tsan Huang 2, Kuei-Chu Hsu 2 Cheng-Hao Ko 2, and Sien Chi
More informationSilicon high-speed binary phase-shift keying modulator with a single-drive push pull high-speed traveling wave electrode
58 Photon. Res. / Vol. 3, No. 3 / June 2015 Wang et al. Silicon high-speed binary phase-shift keying modulator with a single-drive push pull high-speed traveling wave electrode Jinting Wang, 1 Linjie Zhou,
More informationTitle. Author(s)Fujisawa, Takeshi; Koshiba, Masanori. CitationOptics Letters, 31(1): Issue Date Doc URL. Rights. Type.
Title Polarization-independent optical directional coupler Author(s)Fujisawa, Takeshi; Koshiba, Masanori CitationOptics Letters, 31(1): 56-58 Issue Date 2006 Doc URL http://hdl.handle.net/2115/948 Rights
More informationPHOTONIC crystal (PC) waveguides consisting of a line
3034 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 33, NO. 14, JULY 15, 2015 Silica-Clad Silicon Photonic Crystal Waveguides for Wideband Dispersion-Free Slow Light Takuya Tamura, Keisuke Kondo, Yosuke Terada,
More informationCity, University of London Institutional Repository
City Research Online City, University of London Institutional Repository Citation: Dhingra, N., Song, J., Ghosh, S. ORCID: 0000-0002-1992-2289, Zhou, L. and Rahman, B. M. A. ORCID: 0000-0001-6384-0961
More informationAmplitude independent RF instantaneous frequency measurement system using photonic Hilbert transform
Amplitude independent RF instantaneous frequency measurement system using photonic Hilbert transform H. Emami, N. Sarkhosh, L. A. Bui, and A. Mitchell Microelectronics and Material Technology Center School
More informationCMOS-compatible dual-output silicon modulator for analog signal processing
CMOS-compatible dual-output silicon modulator for analog signal processing S. J. Spector 1*, M. W. Geis 1, G.-R.Zhou 2, M. E. Grein 1, F. Gan 2, M.A. Popović 2, J. U. Yoon 1, D. M. Lennon 1, E. P. Ippen
More information10Gbit/s error-free DPSK modulation using a push-pull dual-drive silicon modulator
10Gbit/s error-free DPSK modulation using a push-pull dual-drive silicon modulator M. Aamer, 1,* D. J. Thomson, 2 A. M. Gutiérrez, 1 A. Brimont, 1 F. Y. Gardes, 2 G. T. Reed, 2 J.M. Fedeli, 3 A. Hakansson,
More informationIndex. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index.
absorption, 69 active tuning, 234 alignment, 394 396 apodization, 164 applications, 7 automated optical probe station, 389 397 avalanche detector, 268 back reflection, 164 band structures, 30 bandwidth
More informationOptically reconfigurable balanced dipole antenna
Loughborough University Institutional Repository Optically reconfigurable balanced dipole antenna This item was submitted to Loughborough University's Institutional Repository by the/an author. Citation:
More informationThermally controlled Si photonic crystal slow light waveguide beam steering device
Vol. 26, No. 9 30 Apr 2018 OPTICS EXPRESS 11529 Thermally controlled Si photonic crystal slow light waveguide beam steering device GORO TAKEUCHI,* YOSUKE TERADA, MOE TAKEUCHI, HIROSHI ABE, HIROYUKI ITO,
More information- no emitters/amplifiers available. - complex process - no CMOS-compatible
Advantages of photonic integrated circuits (PICs) in Microwave Photonics (MWP): compactness low-power consumption, stability flexibility possibility of aggregating optics and electronics functionalities
More informationElectro-Optic Crosstalk in Parallel Silicon Photonic Mach-Zehnder Modulators
> REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Electro-Optic Crosstalk in Parallel Silicon Photonic Mach-Zehnder Modulators Lingjun Jiang, Xi Chen, Kwangwoong
More informationDIRECT MODULATION WITH SIDE-MODE INJECTION IN OPTICAL CATV TRANSPORT SYSTEMS
Progress In Electromagnetics Research Letters, Vol. 11, 73 82, 2009 DIRECT MODULATION WITH SIDE-MODE INJECTION IN OPTICAL CATV TRANSPORT SYSTEMS W.-J. Ho, H.-H. Lu, C.-H. Chang, W.-Y. Lin, and H.-S. Su
More informationFinite Width Coplanar Waveguide for Microwave and Millimeter-Wave Integrated Circuits
Finite Width Coplanar Waveguide for Microwave and Millimeter-Wave Integrated Circuits George E. Ponchak 1, Steve Robertson 2, Fred Brauchler 2, Jack East 2, Linda P. B. Katehi 2 (1) NASA Lewis Research
More informationAn Example Design using the Analog Photonics Component Library. 3/21/2017 Benjamin Moss
An Example Design using the Analog Photonics Component Library 3/21/2017 Benjamin Moss Component Library Elements Passive Library Elements: Component Current specs 1 Edge Couplers (Si)
More informationModule 16 : Integrated Optics I
Module 16 : Integrated Optics I Lecture : Integrated Optics I Objectives In this lecture you will learn the following Introduction Electro-Optic Effect Optical Phase Modulator Optical Amplitude Modulator
More informationHigh-speed silicon-based microring modulators and electro-optical switches integrated with grating couplers
Journal of Physics: Conference Series High-speed silicon-based microring modulators and electro-optical switches integrated with grating couplers To cite this article: Xi Xiao et al 2011 J. Phys.: Conf.
More informationCompact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides
Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides Yaming Li, Chong Li, Chuanbo Li, Buwen Cheng, * and Chunlai Xue State Key Laboratory on Integrated Optoelectronics,
More informationA Comparison of Optical Modulator Structures Using a Matrix Simulation Approach
A Comparison of Optical Modulator Structures Using a Matrix Simulation Approach Kjersti Kleven and Scott T. Dunham Department of Electrical Engineering University of Washington 27 September 27 Outline
More informationA NOVEL SCHEME FOR OPTICAL MILLIMETER WAVE GENERATION USING MZM
A NOVEL SCHEME FOR OPTICAL MILLIMETER WAVE GENERATION USING MZM Poomari S. and Arvind Chakrapani Department of Electronics and Communication Engineering, Karpagam College of Engineering, Coimbatore, Tamil
More informationSUPPLEMENTARY INFORMATION
Supplementary Information High-Speed Plasmonic Phase Modulators A. Melikyan 1, L. Alloatti 1, A. Muslija 2, D. Hillerkuss 3, P. C. Schindler 1, J. Li 1, R. Palmer 1, D. Korn 1, S. Muehlbrandt 1, D. Van
More informationOptoelectronic Oscillator Topologies based on Resonant Tunneling Diode Fiber Optic Links
Optoelectronic Oscillator Topologies based on Resonant Tunneling Diode Fiber Optic Links Bruno Romeira* a, José M. L Figueiredo a, Kris Seunarine b, Charles N. Ironside b, a Department of Physics, CEOT,
More informationElectro-Optic Modulators Workshop
Electro-Optic Modulators Workshop NUSOD 2013 Outline New feature highlights Electro-optic modulators Circuit level view Modulator categories Component simulation and parameter extraction Electro-optic
More informationArbitrary Power Splitting Couplers Based on 3x3 Multimode Interference Structures for All-optical Computing
Arbitrary Power Splitting Couplers Based on 3x3 Multimode Interference Structures for All-optical Computing Trung-Thanh Le Abstract--Chip level optical links based on VLSI photonic integrated circuits
More informationA tunable Si CMOS photonic multiplexer/de-multiplexer
A tunable Si CMOS photonic multiplexer/de-multiplexer OPTICS EXPRESS Published : 25 Feb 2010 MinJae Jung M.I.C.S Content 1. Introduction 2. CMOS photonic 1x4 Si ring multiplexer Principle of add/drop filter
More informationElectronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions
Electronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions Christoph Theiss, Director Packaging Christoph.Theiss@sicoya.com 1 SEMICON Europe 2016, October 27 2016 Sicoya Overview Spin-off from
More informationAn on-chip antenna integrated with a transceiver in 0.18-µm CMOS technology
This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented. IEICE Electronics Express, Vol.* No.*,*-* An on-chip antenna integrated with a transceiver
More informationSilicon Photonic Device Based on Bragg Grating Waveguide
Silicon Photonic Device Based on Bragg Grating Waveguide Hwee-Gee Teo, 1 Ming-Bin Yu, 1 Guo-Qiang Lo, 1 Kazuhiro Goi, 2 Ken Sakuma, 2 Kensuke Ogawa, 2 Ning Guan, 2 and Yong-Tsong Tan 2 Silicon photonics
More informationExtraction of Transmission Line Parameters and Effect of Conductive Substrates on their Characteristics
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 19, Number 3, 2016, 199 212 Extraction of Transmission Line Parameters and Effect of Conductive Substrates on their Characteristics Saurabh
More informationDesign, analysis, and transmission system performance of a 41 GHz silicon photonic modulator
Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator David Patel, Samir Ghosh, Mathieu Chagnon, Alireza Samani, Venkat Veerasubramanian, Mohamed Osman, and David
More informationISSCC 2006 / SESSION 13 / OPTICAL COMMUNICATION / 13.7
13.7 A 10Gb/s Photonic Modulator and WDM MUX/DEMUX Integrated with Electronics in 0.13µm SOI CMOS Andrew Huang, Cary Gunn, Guo-Liang Li, Yi Liang, Sina Mirsaidi, Adithyaram Narasimha, Thierry Pinguet Luxtera,
More informationA broadband 180 hybrid ring coupler using a microstrip-to-slotline inverter Riaan Ferreira and Johan Joubert
A broadband 180 hybrid ring coupler using a microstrip-to-slotline inverter Riaan Ferreira and Johan Joubert Centre for Electromagnetism, Department of EEC Engineering, University of Pretoria, Pretoria,
More informationHigh temperature superconducting slot array antenna connected with low noise amplifier
78 High temperature superconducting slot array antenna connected with low noise amplifier H. Kanaya, G. Urakawa, Y. Tsutsumi, T. Nakamura and K. Yoshida Department of Electronics, Graduate School of Information
More informationA continuously tunable and filterless optical millimeter-wave generation via frequency octupling
A continuously tunable and filterless optical millimeter-wave generation via frequency octupling Chun-Ting Lin, 1 * Po-Tsung Shih, 2 Wen-Jr Jiang, 2 Jason (Jyehong) Chen, 2 Peng-Chun Peng, 3 and Sien Chi
More informationDemonstration of low power penalty of silicon Mach Zehnder modulator in long-haul transmission
Demonstration of low power penalty of silicon Mach Zehnder modulator in long-haul transmission Huaxiang Yi, 1 Qifeng Long, 1 Wei Tan, 1 Li Li, Xingjun Wang, 1,2 and Zhiping Zhou * 1 State Key Laboratory
More informationHigh-power flip-chip mounted photodiode array
High-power flip-chip mounted photodiode array Allen S. Cross, * Qiugui Zhou, Andreas Beling, Yang Fu, and Joe C. Campbell Department of Electrical and Computer Engineering, University of Virginia, 351
More informationA 10:1 UNEQUAL GYSEL POWER DIVIDER USING A CAPACITIVE LOADED TRANSMISSION LINE
Progress In Electromagnetics Research Letters, Vol. 32, 1 10, 2012 A 10:1 UNEQUAL GYSEL POWER DIVIDER USING A CAPACITIVE LOADED TRANSMISSION LINE Y. Kim * School of Electronic Engineering, Kumoh National
More informationA silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product Myung-Jae Lee and Woo-Young Choi* Department of Electrical and Electronic Engineering,
More informationLow-Driving-Voltage Silicon DP-IQ Modulator
Low-Driving-Voltage Silicon DP-IQ Modulator Kazuhiro Goi, 1 Norihiro Ishikura, 1 Haike Zhu, 1 Kensuke Ogawa, 1 Yuki Yoshida, 2 Ken-ichi Kitayama, 2, 3 Tsung-Yang Liow, 4 Xiaoguang Tu, 4 Guo-Qiang Lo, 4
More informationAMACH Zehnder interferometer (MZI) based on the
1284 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 23, NO. 3, MARCH 2005 Optimal Design of Planar Wavelength Circuits Based on Mach Zehnder Interferometers and Their Cascaded Forms Qian Wang and Sailing He, Senior
More informationSemiconductor Optical Communication Components and Devices Lecture 39: Optical Modulators
Semiconductor Optical Communication Components and Devices Lecture 39: Optical Modulators Prof. Utpal Das Professor, Department of Electrical Engineering, Laser Technology Program, Indian Institute of
More informationMulti-wavelength laser generation with Bismuthbased Erbium-doped fiber
Multi-wavelength laser generation with Bismuthbased Erbium-doped fiber H. Ahmad 1, S. Shahi 1 and S. W. Harun 1,2* 1 Photonics Research Center, University of Malaya, 50603 Kuala Lumpur, Malaysia 2 Department
More informationPhotonic True Time-Delay Beam Steering for Radars
EMERGING 216 : The Eighth International Conference on Emerging Networks and Systems Intelligence Phonic True Time-Delay Beam Steering for Radars Wen Piao Lin Department of Electrical Engineering, Chang
More informationMODERN AND future wireless systems are placing
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 Wideband Planar Monopole Antennas With Dual Band-Notched Characteristics Wang-Sang Lee, Dong-Zo Kim, Ki-Jin Kim, and Jong-Won Yu, Member, IEEE Abstract
More informationLow Thermal Resistance Flip-Chip Bonding of 850nm 2-D VCSEL Arrays Capable of 10 Gbit/s/ch Operation
Low Thermal Resistance Flip-Chip Bonding of 85nm -D VCSEL Arrays Capable of 1 Gbit/s/ch Operation Hendrik Roscher In 3, our well established technology of flip-chip mounted -D 85 nm backside-emitting VCSEL
More informationCompact Low-power-consumption Optical Modulator
Compact Low-power-consumption Modulator Eiichi Yamada, Ken Tsuzuki, Nobuhiro Kikuchi, and Hiroshi Yasaka Abstract modulators are indispensable devices for optical fiber communications. They turn light
More informationWavelength and bandwidth-tunable silicon comb filter based on Sagnac loop mirrors with Mach- Zehnder interferometer couplers
Wavelength and bandwidth-tunable silicon comb filter based on Sagnac loop mirrors with Mach- Zehnder interferometer couplers Xinhong Jiang, 1 Jiayang Wu, 1 Yuxing Yang, 1 Ting Pan, 1 Junming Mao, 1 Boyu
More informationNew Microstrip-to-CPS Transition for Millimeter-wave Application
New Microstrip-to-CPS Transition for Millimeter-wave Application Kyu Hwan Han 1,, Benjamin Lacroix, John Papapolymerou and Madhavan Swaminathan 1, 1 Interconnect and Packaging Center (IPC), SRC Center
More informationBandpass-Response Power Divider with High Isolation
Progress In Electromagnetics Research Letters, Vol. 46, 43 48, 2014 Bandpass-Response Power Divider with High Isolation Long Xiao *, Hao Peng, and Tao Yang Abstract A novel wideband multilayer power divider
More informationPhotonic time-stretching of 102 GHz millimeter waves using 1.55 µm nonlinear optic polymer EO modulators
Photonic time-stretching of 10 GHz millimeter waves using 1.55 µm nonlinear optic polymer EO modulators H. Erlig Pacific Wave Industries H. R. Fetterman and D. Chang University of California Los Angeles
More informationAnalysis of Self Phase Modulation Fiber nonlinearity in Optical Transmission System with Dispersion
36 Analysis of Self Phase Modulation Fiber nonlinearity in Optical Transmission System with Dispersion Supreet Singh 1, Kulwinder Singh 2 1 Department of Electronics and Communication Engineering, Punjabi
More informationPhotonic Crystal Slot Waveguide Spectrometer for Detection of Methane
Photonic Crystal Slot Waveguide Spectrometer for Detection of Methane Swapnajit Chakravarty 1, Wei-Cheng Lai 2, Xiaolong (Alan) Wang 1, Che-Yun Lin 2, Ray T. Chen 1,2 1 Omega Optics, 10306 Sausalito Drive,
More informationECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016
ECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016 Lecture 10: Electroabsorption Modulator Transmitters Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements
More informationS1. Current-induced switching in the magnetic tunnel junction.
S1. Current-induced switching in the magnetic tunnel junction. Current-induced switching was observed at room temperature at various external fields. The sample is prepared on the same chip as that used
More informationMicrophotonics Readiness for Commercial CMOS Manufacturing. Marco Romagnoli
Microphotonics Readiness for Commercial CMOS Manufacturing Marco Romagnoli MicroPhotonics Consortium meeting MIT, Cambridge October 15 th, 2012 Passive optical structures based on SOI technology Building
More informationSelectively-undercut traveling-wave electroabsorption modulators incorporating a p-ingaas contact layer
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-ingaas contact layer Matthew M. Dummer, James R. Raring, Jonathan Klamkin, Anna Tauke-Pedretti, and Larry A. Coldren University
More informationA TUNABLE GHz BANDPASS FILTER BASED ON SINGLE MODE
Progress In Electromagnetics Research, Vol. 135, 261 269, 2013 A TUNABLE 1.4 2.5 GHz BANDPASS FILTER BASED ON SINGLE MODE Yanyi Wang *, Feng Wei, He Xu, and Xiaowei Shi National Laboratory of Science and
More informationCHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER
CHAPTER 2 POLARIZATION SPLITTER- ROTATOR BASED ON A DOUBLE- ETCHED DIRECTIONAL COUPLER As we discussed in chapter 1, silicon photonics has received much attention in the last decade. The main reason is
More informationDifferential measurement scheme for Brillouin Optical Correlation Domain Analysis
Differential measurement scheme for Brillouin Optical Correlation Domain Analysis Ji Ho Jeong, 1,2 Kwanil Lee, 1,4 Kwang Yong Song, 3,* Je-Myung Jeong, 2 and Sang Bae Lee 1 1 Center for Opto-Electronic
More informationA Frequency Reconfigurable Dual Pole Dual Band Bandpass Filter for X-Band Applications
Progress In Electromagnetics Research Letters, Vol. 66, 53 58, 2017 A Frequency Reconfigurable Dual Pole Dual Band Bandpass Filter for X-Band Applications Amit Bage * and Sushrut Das Abstract This paper
More informationDesign and Analysis of Resonant Leaky-mode Broadband Reflectors
846 PIERS Proceedings, Cambridge, USA, July 6, 8 Design and Analysis of Resonant Leaky-mode Broadband Reflectors M. Shokooh-Saremi and R. Magnusson Department of Electrical and Computer Engineering, University
More informationIntroduction: Planar Transmission Lines
Chapter-1 Introduction: Planar Transmission Lines 1.1 Overview Microwave integrated circuit (MIC) techniques represent an extension of integrated circuit technology to microwave frequencies. Since four
More informationSilicon photonic devices based on binary blazed gratings
Silicon photonic devices based on binary blazed gratings Zhiping Zhou Li Yu Optical Engineering 52(9), 091708 (September 2013) Silicon photonic devices based on binary blazed gratings Zhiping Zhou Li Yu
More informationTwo-dimensional RFID reader pad using free access transmission line
Two-dimensional RFID reader pad using free access transmission line Takuya Okura a) and Hiroyuki Arai Graduate school of Engineering, Yokohama National University 79 5, Tokiwadai, Hodogaya, Yokohama, Kanagawa,
More informationGigabit Transmission in 60-GHz-Band Using Optical Frequency Up-Conversion by Semiconductor Optical Amplifier and Photodiode Configuration
22 Gigabit Transmission in 60-GHz-Band Using Optical Frequency Up-Conversion by Semiconductor Optical Amplifier and Photodiode Configuration Jun-Hyuk Seo, and Woo-Young Choi Department of Electrical and
More informationBroadband photonic microwave phase shifter based on controlling two RF modulation sidebands via a Fourier-domain optical processor
Broadband photonic microwave phase shifter based on controlling two RF modulation sidebands via a Fourier-domain optical processor J. Yang, 1 E. H. W. Chan, 2 X. Wang, 1 X. Feng, 1* and B. Guan 1 1 Institute
More informationA Compact Miniaturized Frequency Selective Surface with Stable Resonant Frequency
Progress In Electromagnetics Research Letters, Vol. 62, 17 22, 2016 A Compact Miniaturized Frequency Selective Surface with Stable Resonant Frequency Ning Liu 1, *, Xian-Jun Sheng 2, and Jing-Jing Fan
More informationHIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS
HIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS J. Piprek, Y.-J. Chiu, S.-Z. Zhang (1), J. E. Bowers, C. Prott (2), and H. Hillmer (2) University of California, ECE Department, Santa Barbara, CA 93106
More informationLarge tunable fractional delay of slow light pulse and its application to fast optical correlator
Large tunable fractional delay of slow light pulse and its application to fast optical correlator Norihiro Ishikura, 1,2,* Toshihiko Baba, 1,2,4 Eichi Kuramochi, 2,3 and Masaya Notomi 2,3 1 Department
More informationLecture 6 Fiber Optical Communication Lecture 6, Slide 1
Lecture 6 Optical transmitters Photon processes in light matter interaction Lasers Lasing conditions The rate equations CW operation Modulation response Noise Light emitting diodes (LED) Power Modulation
More informationNovel OBI noise reduction technique by using similar-obi estimation in optical multiple access uplink
Vol. 25, No. 17 21 Aug 2017 OPTICS EXPRESS 20860 Novel OBI noise reduction technique by using similar-obi estimation in optical multiple access uplink HYOUNG JOON PARK, SUN-YOUNG JUNG, AND SANG-KOOK HAN
More informationThe Design of Optical Signal Transforms Based on Planar Waveguides on a Silicon on Insulator Platform
IACSIT International Journal of Engineering and Technology, Vol., No.3, June ISSN: 793-836 The Design of Optical Signal Transforms Based on Planar Waveguides on a Silicon on Insulator Platform Trung-Thanh
More informationInP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
More informationA 6 : 1 UNEQUAL WILKINSON POWER DIVIDER WITH EBG CPW
Progress In Electromagnetics Research Letters, Vol. 8, 151 159, 2009 A 6 : 1 UNEQUAL WILKINSON POWER DIVIDER WITH EBG CPW C.-P. Chang, C.-C. Su, S.-H. Hung, and Y.-H. Wang Institute of Microelectronics,
More informationALMA MEMO #360 Design of Sideband Separation SIS Mixer for 3 mm Band
ALMA MEMO #360 Design of Sideband Separation SIS Mixer for 3 mm Band V. Vassilev and V. Belitsky Onsala Space Observatory, Chalmers University of Technology ABSTRACT As a part of Onsala development of
More informationA NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC
Page 342 A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC Trong-Huang Lee', Chen-Yu Chi", Jack R. East', Gabriel M. Rebeiz', and George I. Haddad" let Propulsion Laboratory California
More informationCAD oriented study of Polyimide interface layer on Silicon substrate for RF applications
CAD oriented study of Polyimide interface layer on Silicon substrate for RF applications Kamaljeet Singh & K Nagachenchaiah Semiconductor Laboratory (SCL), SAS Nagar, Near Chandigarh, India-160071 kamaljs@sclchd.co.in,
More information1 Introduction. Research article
Nanophotonics 2018; 7(4): 727 733 Research article Huifu Xiao, Dezhao Li, Zilong Liu, Xu Han, Wenping Chen, Ting Zhao, Yonghui Tian* and Jianhong Yang* Experimental realization of a CMOS-compatible optical
More informationPublished in: Proceedings of the 20th Annual Symposium of the IEEE Photonics Benelux Chapter, November 2015, Brussels, Belgium
A Si3N4 optical ring resonator true time delay for optically-assisted satellite radio beamforming Tessema, N.M.; Cao, Z.; van Zantvoort, J.H.C.; Tangdiongga, E.; Koonen, A.M.J. Published in: Proceedings
More informationHiroshi Murata and Yasuyuki Okamura. 1. Introduction. 2. Waveguide Fabrication
OptoElectronics Volume 2008, Article ID 654280, 4 pages doi:10.1155/2008/654280 Research Article Fabrication of Proton-Exchange Waveguide Using Stoichiometric itao 3 for Guided Wave Electrooptic Modulators
More informationOptical IQ modulators for coherent 100G and beyond
for coherent 1G and beyond By GARY WANG Indium phosphide can overcome the limitations of LiNbO3, opening the door to the performance tomorrow s coherent transmission systems will require. T HE CONTINUED
More informationAn integrated recirculating optical buffer
An integrated recirculating optical buffer Hyundai Park, John P. Mack, Daniel J. Blumenthal, and John E. Bowers* University of California, Santa Barbara, Department of Electrical and Computer Engineering,
More information4 Photonic Wireless Technologies
4 Photonic Wireless Technologies 4-1 Research and Development of Photonic Feeding Antennas Keren LI, Chong Hu CHENG, and Masayuki IZUTSU In this paper, we presented our recent works on development of photonic
More informationTitle. Author(s)Saitoh, Fumiya; Saitoh, Kunimasa; Koshiba, Masanori. CitationOptics Express, 18(5): Issue Date Doc URL.
Title A design method of a fiber-based mode multi/demultip Author(s)Saitoh, Fumiya; Saitoh, Kunimasa; Koshiba, Masanori CitationOptics Express, 18(5): 4709-4716 Issue Date 2010-03-01 Doc URL http://hdl.handle.net/2115/46825
More informationSingle-chip Si optical single-sideband modulator
6 Vol. 6, No. 1 / January 218 / Photonics Research Research Article Single-chip Si optical single-sideband modulator BYUNG-MIN YU, 1 JEONG-MIN LEE, 1 CHRISTIAN MAI, 2 STEFAN LISCHKE, 2 LARS ZIMMERMANN,
More informationNanophotonics for low latency optical integrated circuits
Nanophotonics for low latency optical integrated circuits Akihiko Shinya NTT Basic Research Labs., Nanophotonics Center, NTT Corporation MPSoC 17, Annecy, France Outline Low latency optical circuit BDD
More informationDESIGN OF SEVERAL POWER DIVIDERS USING CPW- TO-MICROSTRIP TRANSITION
Progress In Electromagnetics Research Letters, Vol. 41, 125 134, 2013 DESIGN OF SEVERAL POWER DIVIDERS USING CPW- TO-MICROSTRIP TRANSITION Maoze Wang *, Fushun Zhang, Jian Sun, Ke Chen, and Bin Wen National
More information