Brightness-enhanced high-efficiency single emitters for fiber laser pumping

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1 Brightness-enhanced high-efficiency single emitters for fiber laser pumping Dan Yanson*, Noam Rappaport, Moshe Shamay, Shalom Cohen, Yuri Berk, Genadi Klumel, Yaroslav Don, Ophir Peleg, and Moshe Levy. SCD SemiConductor Devices, P.O.Box 2250/99, Haifa 31021, Israel ABSTRACT Reliable single emitters delivering >10W in the 9xx nm spectral range, are common energy sources for fiber laser pumps. The brightness (radiance) of a single emitter, which connotes the angular concentration of the emitted energy, is just as important a parameter as the output power alone for fiber coupling applications. We report on the development of high-brightness single emitters that demonstrate >12W output with 60% wall-plug efficiency and a lateral emission angle that is compatible with coupling into 0.15 NA delivery fiber. Using a purposedeveloped active laser model, simulation of far-field patterns in the lateral (slow) axis can be performed for different epitaxial wafer structures. By optimizing both the wafer and chip designs, we have both increased the device efficiency and improved the slow-axis divergence in high-current operation. Device reliability data are presented. The next-generation emitters will be integrated in SCD's NEON fiber pump modules to upgrade the pump output towards higher ex-fiber powers with high efficiency. Keywords: Single emitter, laser diode, high-power diode laser, fiber-coupled emitter, multi-emitter module, fiber laser pump, COD, COMD, filamentation. 1. INTRODUCTION The increasing demand for high-brightness sources has driven the development of a new class of diode laser modules. High-power laser diodes based on single emitter technology are packaged with relatively simple and inexpensive coupling optics to produce several tens of watts of optical output from low-na delivery fiber. Reliable state-of-the-art single emitters delivering ~10 W out of a ~100 µm lateral aperture in the 9xx nm spectral range, are the most common building blocks of fiber laser pumps [ 1]. In high-power multi-emitter pump modules, beam combining methods such as geometrical and polarization multiplexing [ 2, 3] are employed to couple the output power of several emitters into a single fiber strand. With this approach, the ex-fiber output power increases proportionally to the emitter count, single emitter power and the fiber coupling efficiency, the last two of which are directly related to emitter brightness. Even the emitter count, or the number of sources that can be coupled into fiber, also ultimately depends on the individual source brightness. The brightness of a single emitter is determined not only by its crude output power but the beam quality of its highly multimode emission in the "slow axis" (parallel to the p-n junction), with a lateral beam propagation factor M 2 > 20. In multi-emitter fiber-coupled modules, the beam combination limits are governed by the slow-axis far-field divergence of a single laser element, with a reduced lateral beam profile allowing either a higher emitter count without overfilling the fiber NA (thus increasing the power) or a reduction of the fiber NA and/or core diameter. Therefore, improving the emitter brightness is indispensable to scaling the power of fiber laser pumps while preserving the NA and core size of the delivery fiber. *dany@scd.co.il; phone ; fax ;

2 In this paper, we report on the scaling of single emitter brightness for the next generation of our multi-emitter fibercoupled pump modules. The motivation for this work comes from our technology roadmap with plans to upgrade our incumbent 50W fiber laser pump module, NEON 50, towards higher power operation. We have ascertained that our standard 11W single emitters [ 4] deployed in the 50W pump product can indeed withstand an increased current load, however, the higher operating point comes at the cost of a deteriorated lateral beam divergence, which precludes the use of these devices on our beam combining platform. We have therefore started to optimize our single emitter epitaxy and chip design to demonstrate emitter operation at >12W with a similar or even smaller slow-axis divergence than our standard 11W devices thus aiming for a 33% increase in emitter brightness, which we expect to translate into a commensurate power scaling at module level. The paper is organized as follows: we start off by defining the design goals and describe the active laser model we developed to achieve them, with both the device and wafer design covered in Section 2. In Section 3, we report on the single emitter performance and reliability data. We then summarize the work and describe the prospects for further power and brightness scaling in Section DEVICE SIMULATION AND EPITAXY DESIGN 2.1 Motivation and design goals In this work, we set out to extend the operation of our 4-mm long InGaAs/AlGaAs laser chips with a 90 µm lateral aperture [ 4-5] towards higher powers while preserving or even improving the slow-axis emission quality for subsequent beam combining in a multi-emitter fiber coupled module. We have reported earlier a significant improvement to both the catastrophic optical mirror damage (COMD) power and device reliability by developing a laser mirror passivation process [ 6]. Several laser design adaptations were required to improve the laser performance as listed in Table 1 below. Table 1. Optimization goals for next-generation single emitters and design changes required. Goal Changes required 1. Upgrade operating power Increase chip cavity length Reduce optical loss to < 0.5cm -1 Reduce power density on facet by expanding vertical mode profile 2. Improve slow-axis brightness Optimize gain and epitaxy design to suppress filamentation at high 3. Increase wall-plug efficiency (WPE) from to >60% at operating point to minimize thermal load on package currents All-round optimization for low loss, low resistance, and longer cavity To achieve high-efficiency, high-power operation (Goals 1 and 3 above), it is imperative that the laser have low thermal and electrical resistances, which can be obtained by increasing its active area. For practical applications where the aperture size is constrained e.g. by fiber coupling requirements, the only option is to increase the cavity length, which results in a proportional decrease in the thermal and electrical resistances. To increase the lateral emission brightness (Goal 2), nonlinear effects such as spatial hole burning and filamentation should be minimized by careful control of the current density, confinement factor, and device geometry [ 7]. Laser simulation was relied upon to investigate the effect of the design changes required and optimize the device structure for the target performance. We developed our own active laser simulation tool to predict the laser brightness and efficiency for different epitaxial designs.

3 2.2 Active laser model We have developed a powerful laser simulation tool that incorporates some of the nonlinear effects pertinent to a hot cavity broad area laser in high current operation. Our laser simulator, coded in MATLAB, allows laser characteristics such as the lateral carrier distribution to be evaluated as a function of the electrical injection profile and spatial hole burning arising from the interaction with the optical and electrical fields. By taking into account the optical Kerr effect and linewidth enhancement factor, we are able to simulate the emergence of filaments in the pumped stripe and Fouriertransform the resulting near-field profile into the far field to predict the slow axis pattern and divergence. This capability equips us with the feedback loop between the epitaxy design (e.g., the confinement factor and quantum well parameters) and the resulting near and far-field patterns, thus enabling the epilayer design to be optimized for highbrightness lasing in both slow and fast axes with a minimum number of wafer growths. Our active laser model of Figure 1 accounts for variable optical field (E), injection current density (J), carrier density (N), gain (G) and refractive index (n) distributions in the longitudinal (z) and lateral (x) axes, whereas the vertical (y) axis is assumed to be degenerate, with the relevant parameters (QW thickness d, confinement factor Γ) provided by a separate 1D epilayer waveguide simulation. Figure 1. Active laser model set-up with key device parameters as functions of lateral (x) and propagation (z) directions. The optical-field propagation relies on the 1D scalar paraxial Helmholtz equation (slow-envelope approximation) [ 7-9] complete with a carrier-dependent gain and non-linear effects (linewidth enhancement factor α, Kerr coefficient n 2 ):, where the ± signs denote the forward / backward propagating components, respectively. The carrier density equation includes a diffusion model with electrical injection, non-radiative recombination, spontaneous emission, and a gain model: The beam propagation method is employed to evolve the optical field, with a self-consistent solution for the carrier concentration found after each step. Convergence is achieved after a sufficient number of round-trips, each comprising forward and backward (dependent) propagations. 2.3 Simulation results Great care was taken to ensure solution convergence and stability for each set of device parameters. In Figure 2, we provide the simulation results for our standard 4mm single emitter operated at 10 the threshold current. Pronounced

4 carrier density inhomogeneities can be observed in the lateral carrier profile (a) and a corresponding multi-lobed far-field pattern (c), with a divergence of 7º FWHM. By performing several optimizations of the epitaxy design and increasing the cavity length to 6mm, a more uniform carrier distribution and near-field pattern of Figure 3(a,b) with a lower slow-axis divergence (c) were obtained. (a) (b) (c) Figure 2. Simulation results for a 4mm long standard single emitter operated at I = 10I th : (a) carrier profile; (b) lateral intrachip intensity profile; (c) Resulting lateral far-field profile. (a) (b) (c) Figure 3. As above, but simulated with a 6mm cavity length and optimized epitaxy parameters. For our epitaxy design, we have therefore adopted the quantum well and vertical waveguide parameter space that produced clean, low-divergence lateral far-field profiles at the expected operating point. 2.4 Epitaxy development We have used the information on the quantum well (QW) and gain characteristics obtained from the above active laser model as a guidance for the design of our next-generation InGaAs/AlGaAs epitaxial structures at 9xx nm. Other design goals included optical loss minimization for use with long laser cavities (Table 1) and low electrical resistance and turn-on voltage. In order to reduce the optical loss to a low level, the overlap of the transverse optical mode with the carrier concentrations should be minimized. To this end, we have used an asymmetric waveguide (AW) approach [ 5] where the optical mode is engineered to have a different intensity profile in the p and n-doped regions. In contrast to a symmetric waveguide structure, an asymmetric design allows careful control over the overlap of the optical mode with the highly doped p and n layers, with a doping profile designed to accommodate the optical intensity. A major advantage of AW over a conventional symmetric waveguide is that, by properly designing the asymmetry properties of the structure and its doping profile, one can achieve a low waveguide loss without a significant deterioration of the electrical characteristics of the device, enabling a net increase in the laser wall-plug efficiency (WPE). We have optimized our AW designs over 3 generations of epitaxy by progressively shifting and expanding the transverse optical mode for use with increasingly longer cavity emitters, with the vertical field profiles plotted in Figure 4. The field profiles are referenced to the QW position for ease of comparison, with more and more of the energy pushed into the lower absorbing n-doped layers. As a result, the optical loss α i is more than halved from 0.8cm -1 to 0.3cm -1.

5 Figure 4. Asymmetric waveguide designs over 3 generations of epitaxy with progressively lowered optical profiles and reduced loss α i. Another change shown in Figure 4 is that the optical mode profile (vertical spot size) is broadened with each epitaxy design, which means a reduction of the peak power density on the facet. This is even more obvious when the field profiles are normalized to the integral (energy) under the curve as in Figure 4. With the broadened profiles, we have increased the COMD limit of 14W in 90µm wide Gen 1 epitaxy devices to over 17W in Gen 2 and Gen 3 emitters. In what follows, only Gen 2 and the latest Gen 3 devices will be compared, with the latter structure found to have the lowest loss of α i ~ 0.32cm -1 as inferred from the variable cavity fit of Figure 5(a). The mode shift further into the n-cladding layers and the low loss in the Gen 3 design were achieved with a nearly identical 24º FWHM far-field pattern of Figure 5(b) to that of the Gen 2 design. The thermal performance of both structures is also very similar, with characteristic temperatures T 1 = 420K and T 0 = 175K. 1/Slope eff, A/W (a) Inverse slope efficiency vs. cavity length Gen 3 design Gen 2 design α i =0.54cm -1 α i =0.32cm -1 (b) Far-field divergence, fast axis Gen 2 design Gen 3 design Cavity length, cm Divergence, degrees Figure 5. (a) Inverse differential slope efficiency as a function of cavity length with a fit yielding loss α i ~ 0.32cm -1 for the Gen 3 design as compared to α i ~ 0.54cm -1 for the standard Gen 2 design. (b) Vertical far field patterns for Gen 2 and Gen 3 emitters, with a divergence of 23º and 24º FWHM, respectively.

6 3.1 Single emitters results 3. SINGLE EMITTER PERFORMANCE AND RELIABILITY The elongated cavity single emitters fabricated from low-loss Gen 3 design wafers exceed the performance of our incumbent Gen 2 devices in many aspects, as can be seen from Figure 6. The output power of the majority of devices of both designs is limited by facet failure, with Gen 3 devices showing slightly better average COMD powers than Gen 2 ones. A key advantage of the new design is that the slope efficiency is not compromised despite a longer cavity, whereas the wall-plug efficiency (and thermal performance) is greatly enhanced due to an enlarged device area, which allows the emitters to reach an operating power in excess of 12W with a record-high efficiency of >60%. Furthermore, the efficiency peak is shifted from 6A in Gen 2 devices to 8A in Gen 3 ones, with peak WPE as high as 67%. The increased WPE translates into a lower junction temperature, with reliability benefits, as well as a reduced thermal load on the packaging, which is especially advantageous for our densely-packed multi-emitter pump module. Power & efficiency, 980nm emitters, T=25 C heatsink Power, W Gen 2 emitter Gen 3 emitter Current, A WPE, % Figure 6. Preliminary light-current characteristics (dashed) and wall-plug efficiency (solid) of Gen 2 and Gen 3 emitters at 976nm. However, it is in brightness that the benefits of the new low-loss, long cavity laser design are most pronounced. In the very high CW pumping regime at 18A, 95% of the energy content of the slow-axis far-field profile is confined within a 0.15 NA angular aperture, which allows for a straightforward coupling of the new emitters into multimode optical fiber with a matching NA. As contrasted in Figure 7(a), the emission profile of our standard emitters at such high currents breaks up into side lobes with an unacceptably high divergence for a fiber coupling application. (a) Slow-axis far-field patterns at I=18A, 25 C, CW Gen 2 emitter, 4mm cavity Gen 3 emitter, 5.5mm cavity 95% energy in 0.15 NA Slow axis divergence, degrees (b) Gen 2 emitter, 4mm cavity Gen 3 emitter, 5.5mm cavity 95% energy in 0.23 NA Divergence, degrees 0 I=12A, FWHM I=18A, FWHM I=12A, 1/e2 I=18A, 1/e2 I=12A, 95% energy I=18A, 95% energy Figure 7. Lateral far-field patterns at 18A pumping (a) and statistically averaged lateral divergence (b) for Gen 2 and Gen 3 emitter designs.

7 Owing to the highly irregular profile shapes, a number of emission width definitions were adopted to build a comparative lateral brightness statistics of the two emitter designs as plotted in Figure 7(b). It can be observed that, while at the lower current of 12A the difference in the lateral divergence between the two designs is insignificant regardless of the width definition used, under high pumping the Gen 3 emitters exhibit remarkably lower emission angles, especially when defined using the 1/e 2 and 95% energy content criteria. A likely explanation for the lower divergence may be that a 37% increase in the cavity length in Gen 3 emitters, accompanied by a reduction in the current density, results in the suppression of some high-order lateral modes, possibly ring cavity modes, that cannot oscillate in a resonator with an aspect ratio below a certain value (i.e., lateral aperture to cavity length ratio). 3.2 Device reliability A number of packaged Gen 3 emitters were put on an extended lifetest following a short burn-in cycle where infant failures were eliminated. At the time of writing, only a few hundred hours of operation have been accumulated. Statistically significant lifetest data are available for our 4mm Gen 2 devices that have a similar vertical spot size (see Figure 4) and whose maximum power has a similar COMD limit. We therefore expect comparable reliability data from the new Gen 3 devices, since both Gen 2 and Gen 3 emitters have received identical facet passivation treatment [ 6]. 1.0 Relative power Duration [Hrs] Figure 8. Reliability data of fiber-coupled packages incorporating Gen 2 emitters at different drive currents (post burn-in to weed out infant failures). The jumps and irregularities in the power curves arise from the artefacts of the monitoring system the devices being switched between lifetest racks rather than actual fluctuations of power. Gen 2 emitters are the optical engines inside our HELIUM fiber coupled packages. For reliability testing, the fully integrated modules were operated at 12A, with the reliability data normalized to the start of life shown in Figure 8. No failures have been observed over 2,500 hours of operation, while the total statistics of the device-hours accumulated thus far at 12A operating power exceeds 20,500 hours. Moreover, at the chip-on-carrier level, we have nearly 0.3 million hours with an output power of 11W. However, for a higher operating point in a future fiber-coupled product, the reliability performance is lacking and requires additional improvement, e.g., by optimization of the facet passivation conditions and further expansion of the transverse optical spot size.

8 4. CONCLUSIONS AND OUTLOOK We have upgraded the performance of our InGaAs/AlGaAs single emitters at 976nm for high-brightness, high-efficiency operation. A combination of an output power of >12W and a 60% wall-plug efficiency has been achieved by optimization of the epitaxial structure and emitter form factor. A laser model has been developed that allows a prediction of the laser brightness in both vertical and lateral axes for a given epitaxial design. The optimized wafer design, combined with an extended cavity length, has delivered a brightness improvement with the increased output contained within an angular aperture suitable for coupling into 0.15 NA multimode fiber. However, the device reliability requires further improvement to meet our demanding product specifications. In our future product development roadmap, we plan on integrating these high-brilliance emitters into our NEON multiemitter fiber laser pump modules, with the performance of the incumbent 50W product shown in Figure 9. The conductively-cooled modules can operate at an elevated base temperature up to 45 C. By introducing the new 60%-efficient emitters reported here, we expect the module s thermal performance to be improved, which, combined with increased output power delivered via the same 105μm core, 0.15 NA fiber, will equip fiber laser manufacturers with a high-efficiency, high-brightness pump source. Figure 9. Ex-fiber output power as a function of drive current for several base temperatures from SCD s NEON multiemitter fiber laser pump module. For future power scaling, the emitter brightness must be improved still further. One approach is to continue work on improving the power benchmarks of single emitters while preserving the lateral divergence. In parallel, we are also pursuing brightness improvement techniques to reduce the slow-axis divergence of a standard broad-area emitter with minimal power penalty. These include both intra and extra cavity lateral mode control schemes with a view to increasing the slow-axis beam quality. The results of these activities will be reported elsewhere. ACKNOWLEDGEMENTS The authors would like to thank S. Geva, A. Algali, M. Blonder and Z. Madar for their technical assistance with the fabrication, mounting and characterization of the laser devices presented here. The authors also wish to acknowledge the financial support by the Office of the Chief Scientist of Israel.

9 REFERENCES 1. L. Bao, J. Wang, M. Devito, D. Xu, D. Wise, P. Leisher, M. Grimshaw, W. Dong, S. Zhang, K. Price, D. Li, C. Bai, S. Patterson, and R. Martinsen, "Reliability of high performance 9xx-nm single emitter laser diodes", Proc. SPIE 7583, (2010). 2. C. Wessling, S. Hengesbach, J. Geiger, J. Dolkemeyer, M. Traub, and D. Hoffmann, 50 W passively cooled, fiber coupled diode laser at 976 nm for pumping fiber lasers using 100 μm fiber bundles, Proc. SPIE 6876, (2008). 3. M. Werner, C. Wessling, S. Hengesbach, M. Traub, and H.-D. Hoffmann, 100 W/100 μm passively cooled fiber coupled diode laser at 976 nm based on multiple 100 μm single emitters, Proc. SPIE 7198, p P-7 (2009). 4. M. Levy, N. Rappaport, G. Klumel, M. Shamay, R. Tesler, D. Yanson, S. Cohen, Y. Don and Y. Karni, "Highpower single emitters for fiber laser pumping across 8xx 9xx nm wavelength bands", Proc. SPIE 8241, (2012). 5. M. Levy, Y. Karni, N. Rapaport, Y. Don, Y. Berk, D. Yanson, S. Cohen, J. Oppenheim, "Development of asymmetric epitaxial structures for 65% efficiency laser diodes in the 9xx-nm range," Proc. SPIE 7583, 75830J (2010). 6. D. Yanson, M. Levy, M. Shamay, R. Tesler, N. Rappaport, Y. Don, Y. Karni, I. Schnitzer, N. Sicron, and S. Shusterman, "Facet engineering of high power single emitters," Proc. SPIE 7918 (2011). 7. G. C. Dente, Low confinement factors for suppressed filaments in semiconductor lasers, IEEE J. Quantum Electron., vol. 37, pp (2001). 8. J. R. Marciante and G. P. Agrawal, Non-linear Mechanisms of Filamentation in Broad-Area Semiconductor Lasers, IEEE J. Quantum Electron., vol. 32, pp (1996). 9. J. R. Marciante and G. P. Agrawal, Controlling Filamentation in Broad-Area Semiconductor Lasers and Amplifiers, Appl. Phys. Lett., vol. 69, pp (1996).

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