GaN electronics: what can epitaxy enable

Transcription

1 GaN electronics: what can epitaxy enable nmi meeting Integrating wide bandgap and high performance silicon semiconductors into systems Cranfield University: 22 nd Oct 2015 Trevor Martin FinstP, IQE Cardiff UK Enabling Advanced Technologies

2 Outline IQE What we do Drivers for GaN electronics Technical Commercial Capability Products Development activities Wider perspective Summary Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

3 GaAs based components Epitaxy is our business... Engineering advanced materials GSM PAs Switch WCDMA PAs WCDMA duplexers Silicon based components EPITAXY Chip Fabrication Component Assembly IQE Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

4 Pioneering compound semiconductor technology for over 25 years Bath, UK CVD: FS-GaN Pennsylvania, USA MBE & MOCVD Massachusetts, USA MOCVD Milton Keynes, UK VGF & LEC Washington, USA VGF & LEC New Jersey, USA MOCVD North Carolina, USA MBE Cardiff, UK CVD Cardiff, UK MOCVD IQE Europe Group HQ Singapore MBE Hsinchu, Taiwan MOCVD Enabling Advanced Technologies GANEX summer school : June

5 Drivers for GaN electronics Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

6 GaN for RF Id (ma/mm) High bandgap High Temperature High breakdown field High Voltage High thermal conductivity High Power GaN power module ¼ size of GaAs equivalent 4.5W 5 W SYSTEM BENEFITS Higher power density : Smaller more compact systems Reduced weight GaN Robustness Higher operating temperature Robust to radiation damage (a) (b) (c) 0.5dB manifold loss 25 C 300 C 500 C Vds (Volts) X band telemetry transmitter launch may 2013 on Proba. > 24 months in orbit flight heritage Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

7 GaN microwave devices Civil Mobile comms base-stations CATV Air traffic control and maritime radars Medical Space TWT & GaAs transmitter replacement Earth Observation (SAR) Navigation Telecoms Robust LNAs VSAT (very small aperture terminals) Military Radar Naval, Airborne, phased array EW Satellite communications Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

8 GaN for Power Control What differentiates GaN in Power control Significant Size and weight benefits Higher frequency c.f. silicon enables smaller passives and filters Higher efficiency reduces cooling requirements Wider band gap allows higher temperature operation Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

9 GaN Power Control Market HEV, EV inverter Industrial inverter Traction power transmission DC-DC Server / looter note PC Li+ batt Automobile EPS ABS Injector HDD Comms Power supply Aircon Fridge Switching PS server / WS AC adaptor DC-DC convertor Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

10 GaN Power Control Market Traction power transmission GaN HEV, EV inverter Industrial inverter SiC M Kanechika Toyota, IEDM 2010 Silicon DC-DC Server / looter note PC Li+ batt Automobile EPS ABS Injector HDD Comms Power supply Aircon Fridge Switching PS server / WS AC adaptor DC-DC convertor Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

11 Capability Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

12 Current capability RF Power Control SiC substrate 100 and 150mm Silicon substrate 100 and 150mm High Resistivity Float zone Silicon 100, 150 and 200mm Conducting Czochralski Silicon Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

13 Project activities Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

14 RF GaN on Silicon Carbide (100mm dia) µm nm (004) omega-2 theta Scan GaN AlGaN X-ray SiC Sheet Resistivity µm Surface Topography AlGaN barrier 2DEG / Channel GaN buffer C-V SIMS : Fe SiC Substrate Transmission X polarisor Curvature Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

15 GaN microwave supply chain Europe Space and Defence End users Process foundries Epitaxy SiC Substrates Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

16 GaN microwave supply chain Europe Space and Defence End users Process foundries Epitaxy X - ITAR SiC Substrates X - ITAR Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

17 PearGaN Power Electronics for Applications and Reliability in GaN (Oct 2012 March 2015) Motivation The world is moving to an ever increasing demand for power conversion All electric - Diversification in energy generation and increased sensors and actuators in domestic and industrial applications Conversion efficiency using Si devices is reaching a limit Si CoolMOS (Super Junction MOSFET) GaN can surpass this Lateral H-FET BIS: Power Electronics a strategy for success : Oct 2011 Small individual savings but large impact because of volume GaN has potential to increase conversion efficiency by 2% (96% - 98%) UK data centres use ~3GW 1 2% over a year is equivalent to consumption of ~100,000 households 2 (Borough of Swindon) Excellent compatibility with existing Si processes Thin < 10micron GaN layer on a Silicon substrate Looks like Silicon 150 and 200mm wafer diameter Compatible with Si foundries 1 DatacentreDynamics global census UK Dpt Energy & Climate Change 2014 Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

18 PearGaN Power Electronics for Applications and Reliability in GaN (Oct 2012 March 2015) GaN HFET L1 D1 C1 Q1 Q3 L inv L g L2 C DC C f C PV S1 S2 D2 C2 Q2 Q4 For the H-bridge GaN technology reduced the losses from 6.3W to 3.5W when compared to Si superjunction MOSFETs. Reduced component count (BOM) ~ 40% volume reduction Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

19 KTP: Dynamic characteristics Current Time Combine Measurement Back-bias sweeps to replicate vertical fields Different buffer structures Modelling Silvaco-Atlas Better understand where charges are trapped & move Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

20 Wider perspective Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

21 GaN on Si for RF : 200mm process in a Silicon CMOS Foundry 200mm GaN/Si HEMT Ref: LaRoche et al CS MANTECH 2014 Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

22 GaN on Si for RF 2014 Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

23 E-mode Power devices on 200mm Si D-mode Normally on basis of initial development normally off in cascode configuration E-mode - Normally off Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

24 Higher Frequency applications of GaN DARPA NEXT / HRL 20-nm-gate E-mode HEMTs with an increased Lsw of 70 nm demonstrated a simultaneous ft/fmax of 342/518 GHz with an off-state breakdown voltage of 14V. The single chip MMIC peak output power level of 842 mw at 88 GHz (14 V bias) Micovic et al., IEEE Int. Microw. Symp. Dig., pp , Goal: 1000-transistor, high-yield, 500 GHz E/D-mode GaN technology for mixed signal applications Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

25 Final Thought Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

26 GaN/Si Can Leverage Tremendous Scale Question: How many 200mm equivalent silicon wafers were consumed worldwide in CY2013? Answer: More than 180,000,000 (a) Reference: a.) SEMI Manufacturers Group Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

27 GaN/Si Can Leverage Tremendous Scale Question: How many 200mm equivalent silicon wafers were consumed worldwide in CY2013? Answer: More than 180,000,000 (a) 37 weeks o/p generates enough wafers to cover 4 square km of Cranfield Reference: a.) SEMI Manufacturers Group Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

28 Summary GaN is very compatible with Si RF applications Power control applications 200mm dia wafers for volume applications Depletion mode (normally on) Enhancement mode (normally off) High frequency upto 400GHz Mixed signal (A-D) Harsh environments (Niche) GaN on SiC option Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

29 Questions Thank you Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

30 Developments IQE/cardiff uni Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct

31 Developments IQE/cardiff uni Research Institute in Compound Semi Compound Semi Foundation CSF CS Epi Foundry Underpinning EU supply chain ECSEL (EFFORTLESS) TRL 1-3 TRL 4-6 TRL6-8 Enabling Advanced Technologies NMI workshop WBG & High Perf Si : Oct