+2.5V/+4.096V/+5V Voltage References

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1 // +2.5V/+4.96V/+5V Voltage References General Description The // are low-noise, precision voltage references with extremely low 1ppm/ C temperature coefficients and excellent ±.2% initial accuracy. These devices feature buried-zener technology for lowest noise performance. Load-regulation specifications are guaranteed for source and sink currents up to 15m. Excellent line and load regulation and low output impedance at high frequency make them ideal for highresolution data-conversion systems up to 16 bits. The is set for 2.5V output, the is set for 4.96V output, and the is set for 5.V output. ll three devices provide for the option of external trimming and noise reduction. pplications High-Resolution nalog-to-digital and Digital-to- nalog Converters High-ccuracy Reference Standard High-ccuracy Industrial and Process Control Digital Voltmeters TE Equipment Precision Current Sources Typical Operating Circuit Features Low 1.ppm/ C Temperature Coefficient Very Low 1.5μV P-P Noise (.1Hz to 1Hz) ±.2% Initial ccuracy ±15m Output Source and Sink Current Low, 18mW Power Consumption () Industry-Standard Pinout Optional Noise Reduction and Voltage Trim Excellent Transient Response 8-Pin SO Package vailable Low 2ppm/1h Long-Term Stability Stable for ll Capacitive Loads Ordering Information PRT TEMP RNGE PIN- PCKGE +Denotes a lead(pb)-free/rohs-compliant package. Ordering Information appears at end of data sheet. MX TEMPCO (ppm/ C) CP+ C to +7 C 8 Plastic DIP 2. CP+ C to +7 C 8 Plastic DIP 5. CS+ C to +7 C 8 SO 2. CS+ C to +7 C 8 SO 5. EP+ -4 C to +85 C 8 Plastic DIP 3. EP+ -4 C to +85 C 8 Plastic DIP 7. ES+ -4 C to +85 C 8 SO 5. ES+ -4 C to +85 C 8 SO 7. MJ -55 C to +125 C 8 CERDIP 5. MJ -55 C to +125 C 8 CERDIP 8. Pin Configuration 8V TO 36V INPUT TOP VIEW 2.2µF* NR IN GND OUT TRIM REFERENCE OUT 2.2µF* I.C. IN NR GND I.C. I.C. OUT TRIM *OPTIONL DIP/SO I.C. = INTERNLLY CONNECTED; DO NOT USE ; Rev 5; 3/14

2 // +2.5V/+4.96V/+5V Voltage References bsolute Maximum Ratings (Voltages Referenced to GND) IN...-.3V to +4V OUT, TRIM...-.3V to +12V NR...-.3V to +6V OUT Short-Circuit to GND Duration (V IN 12V)...Continuous OUT Short-Circuit to GND Duration (V IN 4V)...5s OUT Short-Circuit to IN Duration (V IN 12V)...Continuous Continuous Power Dissipation (T = +7 C) 8-Pin Plastic DIP (derate 9.9mW/ C above +7 C)...727mW 8-Pin SO (derate 5.88mW/ C above +7 C)...471mW 8-Pin CERDIP (derate 8.mW/ C above +7 C)...64mW Operating Temperature Ranges MX62 _C_... C to +7 C MX62 _E_...-4 C to +85 C MX62 _MJ C to +125 C Storage Temperature Range C to +15 C Lead Temperature (soldering, 1s)...+3 C Soldering Temperature (reflow) 8 PDIP, 8 SOIC C 8 CDIP C Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Electrical Characteristics (V IN = +1V, I OUT = m, T = T MIN to T MX, unless otherwise noted. Typical values are at T = +25 C.) PRMETER SYMOL CONDITIONS T MIN TYP MX UNITS Input Voltage Range V IN C, E, M 8 36 V +25 C Output Voltage V OUT +25 C Output Voltage Temperature Coefficient (Note 1) Line Regulation (Note 2) TCV OUT ΔV IN C_ C E_ E MJ M C_ C E_ E MJ M V V IN 1V 1V V IN 36V +25 C 1 18 C 3 E 35 M C 2 5 C 7 E 8 M 1 V ppm/ C ppm/v Maxim Integrated 2

3 // +2.5V/+4.96V/+5V Voltage References Electrical Characteristics (continued) (V IN = +1V, I OUT = m, T = T MIN to T MX, unless otherwise noted. Typical values are at T = +25 C.) PRMETER SYMOL CONDITIONS T MIN TYP MX UNITS Load Regulation (Note 2) ΔI OUT Sourcing: m I OUT 15m Sinking: -15m I OUT m M 3 15 M µC Supply Current I IN C, E, M 3. Trim-djustment Range ΔV OUT Figure 1 C, E, M ±15 ±25 mv Turn-On Settling Time t ON To ±.1% of final value +25 C 5 µs Output Noise Voltage (Note 3) en ppm/m.1hz f 1Hz +25 C 1.5 µv P-P 1Hz f 1kHz +25 C µv RMS Temperature Hysteresis (Note 4) +25 C 2 ppm Long-Term Stability t +25 C 2 m ppm/ 1h Maxim Integrated 3

4 // +2.5V/+4.96V/+5V Voltage References Electrical Characteristics (V IN = +1V, I OUT = m, T = T MIN to T MX, unless otherwise noted. Typical values are at T = +25 C.) PRMETER SYMOL CONDITIONS T MIN TYP MX UNITS Input Voltage Range V IN C, E, M 8 36 V +25 C Output Voltage V OUT +25 C Output Voltage Temperature Coefficient (Note 1) Line Regulation (Note 2) Load Regulation (Note 2) TCV OUT ΔV IN ΔI OUT C_ C E_ E MJ M C_ C E_ E MJ M V V IN 1V 1V V IN 36V Sourcing: m I OUT 15m Sinking: -15m I OUT m +25 C 1 18 C 3 E 35 M C 2 5 C 7 E 8 M 1 M 3 9 M C Supply Current I IN C, E, M 3.2 Trim-djustment Range ΔV OUT Figure 1 C, E, M ±24 ±4 mv Turn-On Settling Time t ON To ±.1% of final value +25 C 8 µs Output Noise Voltage (Note 3) en V ppm/ C ppm/v ppm/m.1hz f 1Hz +25 C 2.4 µv P-P 1Hz f 1kHz +25 C µv RMS Temperature Hysteresis (Note 4) +25 C 2 ppm Long-Term Stability t +25 C 2 m ppm/ 1h Maxim Integrated 4

5 // +2.5V/+4.96V/+5V Voltage References Electrical Characteristics (V IN = +1V, I OUT = m, T = T MIN to T MX, unless otherwise noted. Typical values are at T = +25 C.) PRMETER SYMOL CONDITIONS T MIN TYP MX UNITS Input Voltage Range V IN C, E, M 8 36 V +25 C Output Voltage V OUT +25 C Output Voltage Temperature Coefficient (Note 1) Line Regulation (Note 2) Load Regulation (Note 2) TCV OUT ΔV IN ΔI OUT C_ C E_ E MJ M C_ C E_ E MJ M V V IN 1V 1V V IN 36V Sourcing: m I OUT 15m Sinking: -15m I OUT m +25 C 1 18 C 3 E 35 M C 2 5 C 7 E 8 M 1 M 3 9 M C Supply Current I IN C, E, M 3.3 Trim-djustment Range ΔV OUT Figure 1 C, E, M ±3 ±5 mv Turn-On Settling Time t ON To ±.1% of final value +25 C 1 µs Output Noise Voltage (Note 3) en Note 1: Temperature coefficient is measured by the box method; i.e., the maximum V OUT is divided by T x V OUT. Note 2: Line regulation ( V OUT / (V OUT x V IN )) and load regulation ( V OUT /(V OUT x I OUT )) are measured with pulses and do not include output voltage changes due to die-temperature changes. Note 3: Noise specifications are 1% tested for the 1Hz to 1kHz bandwidth. Contact factory for 1% noise testing in the.1hz to 1Hz bandwidth. Note 4: Temperature hysteresis is specified at T = +25 C by measuring V OUT before and after changing temperature by +25 C using the PDIP package. V ppm/ C ppm/v ppm/m.1hz f 1Hz +25 C 3. µv P-P 1Hz f 1kHz +25 C µv RMS Temperature Hysteresis (Note 4) +25 C 2 ppm Long-Term Stability t +25 C 2 m ppm/ 1h Maxim Integrated 5

6 // +2.5V/+4.96V/+5V Voltage References Typical Operating Characteristics (V IN = 1V, I OUT = m, T = +25 C, unless otherwise noted.) NORMLIZED OUTPUT VOLTGE vs. TEMPERTURE CHNGE IN OUTPUT VOLTGE vs. OUTPUT CURRENT T = -4 C TEMPERTURE ( C) T = +85 C T = +25 C toc1 toc VOUT (ppm) NORMLIZED OUTPUT VOLTGE vs. TEMPERTURE toc TEMPERTURE ( C) CHNGE IN OUTPUT VOLTGE vs. OUTPUT CURRENT T = +25 C T = -4 C T = +85 C toc VOUT (ppm) NORMLIZED OUTPUT VOLTGE vs. TEMPERTURE toc TEMPERTURE ( C) CHNGE IN OUTPUT VOLTGE vs. OUTPUT CURRENT T = -4 C T = +85 C T = +25 C toc6 8 4 VOUT (ppm) I OUT (m) I OUT (m) I OUT (m) VOUT (ppm) CHNGE IN OUTPUT VOLTGE vs. INPUT VOLTGE toc7 SUPPLY CURRENT (m) SUPPLY CURRENT vs. SUPPLY VOLTGE toc8 SUPPLY CURRENT (m) SUPPLY CURRENT vs. TEMPERTURE toc V IN (V) SUPPLY VOLTGE (V) TEMPERTURE ( C) Maxim Integrated 6

7 // +2.5V/+4.96V/+5V Voltage References Typical Operating Characteristics (continued) (V IN = 1V, I OUT = m, T = +25 C, unless otherwise noted.) OUTPUT NOISE-VOLTGE DENSITY vs. FREQUENCY OUTPUT NOISE-VOLTGE DENSITY vs. FREQUENCY OUTPUT NOISE-VOLTGE DENSITY vs. FREQUENCY OUTPUT NOISE DENSITY (nv/ Hz) C NR = µf C NR = 1µF toc1 OUTPUT NOISE DENSITY (nv/ Hz) C NR = µf C NR = 1µF toc11 OUTPUT NOISE DENSITY (nv/ Hz) C NR = µf C NR = 1µF toc k 1k 1 1 1k 1k 1 1 1k 1k.1Hz to 1Hz NOISE toc13.1hz to 1Hz NOISE toc14.1hz to 1Hz NOISE toc15 C OUT = C NR = µf C OUT = C NR = mf C OUT = C NR = µf VOUT,.5µV/div VOUT, 1µV/div VOUT, 1µV/div 1sec/div 1sec/div 1sec/div OUTPUT IMPEDNCE (Ω) OUTPUT IMPEDNCE vs. FREQUENCY I SINK = 5m toc16 RIPPLE REJECTION (d) RIPPLE REJECTION vs. FREQUENCY (C NR = 1µF) toc17 RIPPLE REJECTION (d) RIPPLE REJECTION vs. FREQUENCY (C NR = µf) MX667/8 toc18.1 I SOURCE = 5m 1 1 1k 1k 1k 1M k 1k k 1k Maxim Integrated 7

8 // +2.5V/+4.96V/+5V Voltage References Typical Operating Characteristics (continued) (V IN = 1V, I OUT = m, T = +25 C, unless otherwise noted.) LOD-TRNSIENT RESPONSE (SOURCING) toc19 LOD-TRNSIENT RESPONSE (SINKING) toc2 m -1m 1m m 2µs/div 2µs/div : I OUT, 1m/div (SOURCING) : V OUT, 5mV/div : I OUT, 1m/div (SINKING) : V OUT, 5mV/div LOD-TRNSIENT RESPONSE toc21-1m +1m TURN-ON ND TURN-OFF TRNSIENT RESPONSE toc22 +1V V IN = 1V C OUT = C NR = µf C IN = C OUT = C NR = µf 1µs/div : I OUT (1m SOURCE ND SINK), 2m/div, C COUPLED : V OUT, 2mV/div, C COUPLED TURN-ON ND TURN-OFF TRNSIENT RESPONSE toc23 +1V 1µs/div : V IN, 1V/div : V OUT, 1V/div TURN-ON ND TURN-OFF TRNSIENT RESPONSE toc24 +1V C IN = C OUT = C NR = µf C IN = C OUT = C NR = µf 1µs/div 1µs/div : V IN, 1V/div : V OUT, 1V/div : V IN, 1V/div : V OUT, 1V/div Maxim Integrated 8

9 // +2.5V/+4.96V/+5V Voltage References Pin Description PIN NME FUNCTION 1, 7, 8 I.C. Internally Connected. Do not use. 2 IN Positive Power-Supply Input 3 NR 4 GND Ground 5 TRIM Detailed Description Noise Reduction. Optional capacitor connection for wideband noise reduction. Leave open if not used (Figure 2). External Trim Input. llows ±1% output adjustment (Figure 1). Leave open if not used. 6 OUT Voltage Reference Output Temperature Stability The // are highly stable, low-noise voltage references that use a low-power temperature-compensation scheme to achieve laboratorystandard temperature stability. This produces a nearly flat temperature curve, yet does not require the power associated with heated references. The output voltage can be trimmed a minimum of.6% by connecting a 1kΩ potentiometer between OUT and GND, and connecting its tap to the TRIM pin, as shown in Figure 1. The external trimming does not affect temperature stability. Noise Reduction To augment wideband noise reduction, add a 1μF capacitor to the NR pin (Figure 2). Larger values do not improve noise appreciably (see Typical Operating Characteristics). Noise in the power-supply input can affect output noise, but can be reduced by adding an optional bypass capacitor to the IN pin and GND. ypassing The // are stable with capacitive load values from μf to 1μF, for all values of load current. dding an output bypass capacitor can help reduce noise and output glitching caused by load transients. pplications Information Negative Regulator Figure 3 shows how both a +5V and -5V precision reference can be obtained from a single unregulated +5V supply. MX681 generates approximately ±9V to operate the reference and MX432 inverting amplifier. The +5V is inverted by the MX432 chopper-stabilized amplifier. Resistor R1 is optional, and may be used to trim the ±5V references. R2 and R4 should be matched, both in absolute resistance and temperature coefficient. R3 is optional, and is adjusted to set the -5V reference. 8V TO 36V INPUT 8V TO 36V INPUT NR IN GND OUT TRIM REFERENCE OUT 1kΩ * 1µF NR IN GND OUT TRIM REFERENCE OUT *OPTIONL Figure 1. Output Voltage djustment Figure 2. Noise-Reduction Capacitor Maxim Integrated 9

10 // +2.5V/+4.96V/+5V Voltage References +5V INPUT 3.3µF 3.3µF C2- GND V- C1+ V CC V+ C1- MX865 C2+ C1 2.2µF C2 1µF NR IN GND OUT TRIM R1 1kΩ C3 2.2µF R2 1kΩ R3 1kΩ C4 1µF MX432 +REFERENCE OUT 2.2µF R4 1kΩ -REFERENCE OUT Figure 3. +5V and -5V References from a Single +5V Supply Ordering Information (continued) PRT TEMP RNGE PIN- PCKGE +Denotes a lead(pb)-free/rohs-compliant package. MX TEMPCO (ppm/ C) CP+ C to +7 C 8 Plastic DIP 2. CP+ C to +7 C 8 Plastic DIP 5. CS+ C to +7 C 8 SO 2. CS+ C to +7 C 8 SO 5. EP+ -4 C to +85 C 8 Plastic DIP 3. EP+ -4 C to +85 C 8 Plastic DIP 7. ES+ -4 C to +85 C 8 SO 3. ES+ -4 C to +85 C 8 SO 7. MJ -55 C to 125 C 8 CERDIP 5. MJ -55 C to +125 C 8 CERDIP 8. CP+ C to +7 C 8 Plastic DIP 2. CP+ C to +7 C 8 Plastic DIP 5. CS+ C to +7 C 8 SO 2. CS+ C to +7 C 8 SO 5. EP+ -4 C to +85 C 8 Plastic DIP 3. EP+ -4 C to +85 C 8 Plastic DIP 7. ES+ -4 C to +85 C 8 SO 3. ES+ -4 C to +85 C 8 SO 7. MJ -55 C to +125 C 8 CERDIP 5. MJ -55 C to +125 C 8 CERDIP 8. Chip Information PROCESS: CMOS Package Information For the latest package outline information and land patterns (footprints), go to Note that a +, #, or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PCKGE TYPE PCKGE CODE OUTLINE NO. LND PTTERN NO. 8 SO S PDIP P CERDIP J Maxim Integrated 1

11 // +2.5V/+4.96V/+5V Voltage References Revision History REVISION NUMER REVISION DTE DESCRIPTION PGES CHNGED 9/96 Initial release 4 1/1 Updated Electrical Characteristics Note /14 dded lead-free notation to Ordering Information and updated Package Information 1, 1 For pricing, delivery, and ordering information, please contact Maxim Direct at , or visit Maxim Integrated s website at Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance. Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc. 214 Maxim Integrated Products, Inc. 11

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