SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH
|
|
- Wendy Holland
- 6 years ago
- Views:
Transcription
1 Linear Integrated Systems SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Product Summary Part Number V (BR)DS Min(V) V GS(th) Max (V) r DS(on) Max(Ω) C rss Max (pf) t ON Max (ns) SD210DE V GS = 10V SD214DE V GS = 10V SST V GS = 10V SST V GS = 10V Features Benefits Applications Ultra-High Speed Switching t ON : 1 ns High-Speed System Performance Fast Analog Switch Ultra-Low Reverse Capacitance: 0.2 pf Low Insertion Loss at High Frequencies Fast Sample-and-Holds Low Guaranteed r V Low Transfer Signal Loss Pixel-Rate Switching Low Turn-On Threshold Voltage Simple Driver Requirement DAC Deglitchers N-Channel Enhancement Mode Single Supply Operation High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. For similar products see: quad array SD5000/5400 series, and Zener protected SD211DE/SST211 series. Top View SD210DE SD214DE Top View SST210 SST214 Absolute Maximum Ratings (T A = 25 0 C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage... ± 40 V Gate-Substrate Voltage... ± 30 V Drain-Source Voltage (SD210DE) V (SD214DE) V Source-Drain Voltage (SD210DE) V (SD214DE) V Drain-Substrate Voltage (SD210DE) V (SD214DE) V Source-Substrate Voltage (SD210DE) V (SD214DE) V Drain Current ma Lead Temperature (1/16" from case for 10 seconds) C Storage Temperature to C Operating Junction Temperature to C Power Dissipation a mw Notes: a. Derate 3 mw/ 0 C above 25 0 C Linear Integrated Systems 4042 Clipper Court Fremont, CA Tel: Fax:
2 Specifications a Notes: a. T A = 25 0 C unless otherwise noted. b. B is the body (substrate) and V (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems 4042 Clipper Court Fremont, CA Tel: Fax:
3 MAIN MENU Home Page Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors Lead (Pb) Free / RoHS Sales Reps Company Info Directions Press Release Site Map The following is provided to address some of the more commonly asked questions regarding how LIS is meeting customer demand to supply product which is compliant to the RoHS and WEEE Directives. If you have any questions or need further information, please contact the LIS factory for assistance. Linear Integrated Systems can supply parts that do not contain the following Banned Substances: Asbestos Azo Compounds Cadmium Cadmium Compounds Chlorinated Paraffins Hexavalent Chromium Compounds Formaldehyde Lead (Pb) Mirex (Perchlordecone) Mercury and Mercury Compounds Organic Tin Compounds (Tributyl Tin & Triphenyl Tin) Ozone Depletion Substances PBB(Polybromobiphenyl) PBDE (Polybromobiphenyl Biphenyls Ethers Category) PCB (Polychlorinated Biphenyls) Polychlorinated Naphthalene» Click Here «for Lead-Free / RoHS Part List Package Types: The following packages do not and has never contained any of the above mentioned substances: Bare Die, (Metal Can) TO-18, TO-5, TO-52, TO-71, TO-72, TO-78, TO-99: The following packages are available in Lead-Free / RoHS versions: MSOP, QSOP, SOIC, SOT, TO-92. Metal Can Facts: Headers-Nickel with Gold Plating, Cans-100% Nickel
4 Plastic Package Facts: Plating Material: Plastic Packages- Matte 100% Tin Material of Lead Frame: Copper 194, or Alloy 42 Lead Content of the Plating Material: Lead Free (Less than 0.1%, 1000ppm by weight) Soldering: Maximum Temperature=260 Degree C, Maximum Time=20-40 seconds Reflow Profile: Peak Temperature=260 Degree C, Peak Time=20-40 seconds Acceptable number of Reflows: 3 times Backward Compatibility: Lead Free packages can be soldered using existing Sn-Pb solder and temperature profiles Forward Compatibility: Lead Free Packages can be soldered using lead free solders and the appropriate higher temperature profiles Storage Conditions: Jedec Std. 20, Level 1 Questions: Q1: When does LIS plan to offer Lead Free packaging to its customers? A1: LIS has begun offering customers Lead Free packaging for plastic packages as of 1/1/04, per customer request. Q2: When does LIS plan to offer RoHS compliant packaging to its customers? A2: LIS has begun offering customers RoHS compliant packaging for it plastic packages as of 1/1/05, per customer request. Q3: Will LIS continue to offer Non-Lead Free (contains lead) packaging to its customers? A3: Yes, LIS will continue to offer Non-Lead Free packaging, per customer request. Q4: How do I order Lead Free parts versus Non-Lead Free Parts? A4: When ordering, specify "Lead-Free" in your part description on Purchase Orders and Quotations. Q5: How do I order RoHS Compliant Parts versus Non-RoHS Compliant Parts? A5: When ordering, specify "RoHS Compliant" in your part description on Purchase Orders and Quotations. Q6: How will I be able to identify a Lead-Free / RoHS Compliant Part versus a Non-Lead Free Part / Non RoHS Compliant Part? A6: The Lead-Free RoHS Compliant Part will be marked with the letter "F". Q7: Are there any additional costs for ordering Lead-Free or RoHS Compliant
5 Parts? A7: Determined on a case by case basis. Q8: What is the LIS policy on Lead-Free implementation? A8: LIS will continue to supply requirements for both Lead-Free Parts and Non- Lead Free parts per customer request. Q9: What is the LIS policy on RoHS Compliant Part implementation? A9: LIS has begun converting to ROHS Compliant mold compound on all plastic Packages effective 1/1/05. All parts with date codes prior 1/1/05 are not made of RoHS compliant mold compound. Ordering Information: 1. RoHS Compliant (Lead-Free and PBDE-Free) Parts: The part description must include the term "RoHS Compliant". Do not include the letter "F", it must state RoHS Compliant. Purchase Orders that do not specificately state RoHS Compliant will be shipped either "Leaded- Parts"or "RoHS Compliant parts" depending on our inventory. 2. Leaded (Devices that contain lead) Parts: The part description must include the term "Leaded Part". Purchase Orders that do not specifically state "Leaded Part" will be shipped either "Leaded- Parts" or "RoHS Compliant parts" depending on our inventory. 3. Disclaimer: LIS will not be responsible for accepting the return of any parts that were not ordered correctly by the customer. Linear Integrated Systems 4042 Clipper Court Fremont California USA Web Site: Phone: Fax:
6 MAIN MENU Home Page Products Support Literature Spice Models Downloads Lead (Pb) Free / RoHS Compliant Parts List The follow listed parts are currently available in Lead (Pb) Free and RoHS Compliant Packages. Die and Metal Can Customers: The Bare Die and Metal Can Versions of the products listed were never manufactured with lead or any RoHS Banned Substances. Contact Us Distributors Lead (Pb) Free / RoHS Sales Reps Plastic and Surface Mount Customers: The MSOP, QSOP, SOIC, SOT and TO-92 versions listed which may have previously contained lead and RoHS Banned Substances in the past, are now available in Lead (Pb) Free and RoHS Compliant Packages.» Click Here «for Lead-Free / RoHS Fact Sheet Company Info Directions Press Release Site Map *All single devices available in TO-92, TO-18, SOT-23-3, Tested Die *All Dual Devices available in PDIP, TO-71, TO-5, SOIC-8, SOT23-6, Tested Die *All Single DMOS Switches available in TO-72, SOT-143, Tested Die *All Quad DMOS Switches available in PDIP, Sidebraze, SOIC-14, SOIC-16, Tested Die 2N3954A 2N3954 2N3955 2N3956 2N3958 2N4117A 2N4118A 2N4119A 2N4351 2N4391 2N4392 2N4393 2N4416A 2N4416 2N5018 2N5019 2N5114 2N5115 Ultra High Input Impedance N-Channel JFET Amplifier Ultra High Input Impedance N-Channel JFET Amplifier Ultra High Input Impedance N-Channel JFET Amplifier N-Channel Enhancement Mode MOSFET Low Noise, N-Channel JFET Switch Low Noise, N-Channel JFET Switch Low Noise, N-Channel JFET Switch
7 2N5116 2N5905 2N5906 2N5907 2N5908 2N5909 2N5911 2N5912 2N5912C 3N163 3N164 3N165 3N166 3N170 3N171 3N190 3N191 DPAD1 DPAD2 DPAD5 DPAD10 DPAD20 DPAD50 DPAD100 ID100 ID101 IT120A IT120 IT121 IT122 IT124 IT130A IT130 IT131 IT132 J108 J109 J110 J111 J112 J113 J174 Wideband, High Gain, Monolithic Dual, N- Channel JFET Wideband, High Gain, Monolithic Dual, N- Channel JFET Wideband, High Gain, Monolithic Dual, N- Channel JFET P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Monolithic Dual, P-Channel Enhancement Mode MOSFET Monolithic Dual, P-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Dual, Low Leakage Pico-Amp Diodes Monolithic Dual, NPN Transistor Monolithic Dual, NPN Transistor Monolithic Dual, NPN Transistor Monolithic Dual, NPN Transistor Super Beta, Monolithic Dual, NPN Transistor Monolithic Dual, PNP Transistor Monolithic Dual, PNP Transistor Monolithic Dual, PNP Transistor Monolithic Dual, PNP Transistor Low Noise N-Channel JFET Switch Low Noise N-Channel JFET Switch Low Noise N-Channel JFET Switch High Speed N-Channel JFET Switch High Speed N-Channel JFET Switch High Speed N-Channel JFET Switch
8 J175 J176 J177 J201 J202 J204 J210 J211 J212 J308 J309 J310 J500 J501 J502 J503 J504 J505 J506 J507 J508 J509 J510 J511 JPAD5 JPAD10 JPAD20 JPAD50 JPAD100 JPAD200 JPAD500 LS301 LS302 LS303 LS310 LS311 LS312 LS313 LS318 LS320 LS3250 LS350 Low Noise, Single, N-Channel JFET Amplifier Low Noise, Single, N-Channel JFET Amplifier Low Noise, Single, N-Channel JFET Amplifier Low Noise N-Channel JFET General Purpose Amplifier Low Noise N-Channel JFET General Purpose Amplifier Low Noise N-Channel JFET General Purpose Amplifier High Voltage, Super Beta, Monolithic Dual, NPN Transistor High Voltage, Super Beta, Monolithic Dual, NPN Transistor High Voltage, Super Beta, Monolithic Dual, NPN Transistor Tightly Matched, Monolithic Dual, NPN Transistor Tightly Matched, Monolithic Dual, NPN Transistor Tightly Matched, Monolithic Dual, NPN Transistor Tightly Matched, Monolithic Dual, NPN Transistor Log Conformance, Monolithic Dual, NPN Transistor Monolithic BIFET Amplifier(P-Channel MOSFET and NPN) Higher Current, Monolithic Dual, NPN Transistor Tightly Matched, Monolithic Dual, PNP Transistor
9 LS351 LS352 LS3550 LS358 LS5301 LS627 LS823 LS824 LS830 LS831 LS832 LS833 LS840 LS841 LS842 LS843 LS844 LS845 LS846 LSK170 LSK389 PAD1 PAD2 PAD5 PAD10 PAD20 PAD50 PAD100 PF5301 SD210 SD211 SD213 SD214 SD215 SD5000 SD5001 Tightly Matched, Monolithic Dual, PNP Transistor Tightly Matched, Monolithic Dual, PNP Transistor Higher Current, Monolithic Dual, PNP Transistor Log Conformance, Monolithic Dual, PNP Transistor High Impedance, Single, N-Channel JFET Photo FET, N-Channel JFET Ultra Ultra Ultra Ultra Low Noise, Low Drift, Low Capacitance, Monolithic Dual, N-Channel JFET Low Noise, Low Drift, Low Capacitance, Monolithic Dual, N-Channel JFET Low Noise, Low Drift, Low Capacitance, Monolithic Dual, N-Channel JFET Ultra Ultra Ultra Ultra Low Noise, Low Drift, Single, N-Channel JFET 1nV / hz Low Noise, Low Capacitance, High Input Impedance, N-Channel JFET Amplifier 1nV/hz Low Noise, Monolithic Dual, N-Channel JFET High Impedance, Single, N-Channel JFET Protection Protection Protection Quad With Zener Diode Protection Quad With Zener
10 SD5400 SD5401 SD823 SD824 SST111 SST112 SST113 SST174 SST175 SST176 SST210 SST211 SST213 SST214 SST215 SST108 SST109 SST110 SST308 SST309 SST310 SST401 SST402 SST403 SST404 SST405 SST406 SST4117A SST4118A SST4119A SST4391 SST4392 SST4393 SST440 SST441 SST4416A SST4416 Diode Protection Quad With Zener Diode Protection(SMT) Quad With Zener Diode Protection(SMT) High Speed N-Channel JFET Switch(SMT) High Speed N-Channel JFET Switch(SMT) High Speed N-Channel JFET Switch(SMT) (SMT) (SMT) (SMT) (SMT) Protection(SMT) Protection(SMT) (SMT) Protection(SMT) Low Noise N-Channel JFET Switch (SMT) Low Noise N-Channel JFET Switch (SMT) Low Noise N-Channel JFET Switch (SMT) (SMT) (SMT) (SMT) (SMT) (SMT) (SMT) (SMT) (SMT) (SMT) Ultra High Input Impedance N-Channel JFET Amplifier(SMT) Ultra High Input Impedance N-Channel JFET Amplifier(SMT) Ultra High Input Impedance N-Channel JFET Amplifier(SMT) Low Noise, N-Channel JFET Switch(SMT) Low Noise, N-Channel JFET Switch(SMT) Low Noise, N-Channel JFET Switch(SMT) Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) (SMT) (SMT)
11 SST500 SST501 SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 SST5911 SST5912 SST823 SST824 SSTPAD5 SSTPAD100 U308 U309 U310 U401 U402 U403 U404 U405 U406 U421 U422 U423 U424 U425 U426 VCR11N Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) (SMT) (SMT) (SMT) (SMT) Monolithic Dual, JFET Voltage Controlled Resistor Linear Integrated Systems 4042 Clipper Court Fremont California USA Web Site: Phone: Fax:
LSK170A LSK170B 6 12 LSK170C 10 20
LSK170 Linear Integrated Systems FEATURES ULTRA LOW NOISE (f = 1kHz) e n = 0.9nV/ Hz HIGH BREAKDOWN VOLTAGE BV GSS = 40V max HIGH GAIN Y fs = 22mS (typ) HIGH INPUT IMPEDANCE I G = -500pA max LOW CAPACITANCE
More informationJ/SST108 J/SST109 J/SST110 MIN MAX MIN MAX MIN MAX
J/SST108 SERIES Linear Integrated Systems LOW NOISE SINGLE N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE r DS(on) 8Ω FAST SWITCHING t ON
More informationU/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET
Linear Integrated Systems U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN G pg = 11.5dB LOW HIGH FREQUENCY
More informationLS830 LS831 LS832 LS833
Linear Integrated Systems FEATURES ULTRA LOW DRIFT V GS1-2 / T = 5µV/ C max. ULTRA LOW LEAKAGE I G = 80fA TYP. LOW NOISE e n = 70nV/ Hz TYP. LOW CAPACITANCE C ISS = 3pf MAX. LS830 LS831 LS832 LS833 ULTRA
More informationGS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet
Features 100 V enhancement mode power switch Top-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationGS61004B 100V enhancement mode GaN transistor Preliminary Datasheet
Features 100V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 15 mω I DS(max) = 45 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationPart Number Case Packaging DMN2990UFO-7B X2-DFN k/Tape & Reel
20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
More informationTop View. Part Number Compliance Case Packaging DMN6066SSD-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSDQ-13 Automotive SO-8 2,500/Tape & Reel
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
More informationDual N-Channel MOSFET 30V, 20A, 20mΩ
Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating RoHS compliant Halogen-free package APPLICATION Power Supply Motor COntrol KEY PERFORMANCE PARAMETERS
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
More informationDual P-Channel MOSFET -60V, -12A, 68mΩ
Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 60 V (D-S) MOSFET N700K Marking code: 7K D 3 SOT-3 (TO-36) G Top View PRODUCT SUMMARY V DS (V) 60 R DS(on) max. ( ) at V GS = 0 V Q g typ. (nc) 0.4 I D (ma) 300 Configuration Single S FEATURES
More informationGS61008P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationN-Channel 60-V (D-S) MOSFET
N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE
More informationDual N-Channel 20-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).8 at V GS = 4.5 V 8. at V GS =.5 V 8 nc SO-8 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power
More informationGS61008P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description. Circuit Symbol.
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationGS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet
Features 100 V enhancement mode power switch Top-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationP-Channel 20 V (D-S) MOSFET with Schottky Diode
P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY
More informationU to SST/U to SST/U to Features Benefits Applications
SST/U Series Monolithic N-Channel JFET Duals Product Summary SST SST U U U Part Number GS(off) () (BR)GSS Min () Min (ms) I G Typ (pa) GS GS Max (m) U. to. SST/U. to. SST/U. to. Features Benefits Applications
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationP-Channel Enhancement-Mode MOSFET Transistors. I D(on) Min (ma) r DS(on) Max ( ) 3N to N to
P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V (BR)DSS Min (V) V GS(th) (V) r DS(on) Max ( ) I D(on) Min (ma) C rss Max (pf) t ON Typ (ns) 3N63 4 2 to 5 25 5.7 8 3N64 3 2 to
More informationGS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 25 mω I DS(max) = 60 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation
More informationDual P-Channel 20-V (D-S) MOSFET
Dual P-Channel 2-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = - 4.5 V - 4-2 8.94 at V GS = - 2.5 V - 4 FEATURES Halogen-free Option Available TrenchFET Power
More informationPin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More information60 V, 340 ma dual N-channel Trench MOSFET
Rev. 2 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD)
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationP-Channel 20-V (D-S) MOSFET
Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to
More informationBSS123W. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100V 200mA
More informationN-Channel Power MOSFET 40V, 3.9A, 45mΩ
N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance
More informationAssembly Material. Handling Code Temperature Range Package Code
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R
More informationFeatures. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationGS P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description.
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 5 mω I DS(max) = 120 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationAPM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationCS9N2302-S1 20V 3.2 A N-Channel MOSFET CS9N2302-S1. 20V 3.2 A N-Channel MOSFET. Applications. Features. Available Package. General Description
20V 3.2 A N-Channel MOSFET 20V 3.2 A N-Channel MOSFET Features Low on-resistance R DS(ON) = 60 mω (Typ.) @ V GS = 4.5V, ID = 3.2A High current drive I D = 3.2 ma Low gate drive 8V Low threshold 1.0 V (Typ.)
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationN-Channel Power MOSFET 150V, 1.4A, 480mΩ
TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
More informationGreen. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel
YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationSM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
More information20 V, 800 ma dual N-channel Trench MOSFET
Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted
More informationN- and P-Channel 60-V (D-S), 175 C MOSFET
N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
More informationFeatures SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel
NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state
More informationHandling Code Temperature Range
N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
More informationDual N-Channel MOSFET 30V, 20A, 20mΩ
Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
More informationIRF6641TRPbF DIGITAL AUDIO MOSFET. Key Parameters V DS 200 V R DS(ON) V GS = 10V 51 m Qg typ. 34 nc R G(int) typ. 1.0
Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low R DS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationG D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationN-Channel Power MOSFET 60V, 38A, 17mΩ
N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound APPLICATION SMPS Synchronous Rectification
More informationGS61004B 100V enhancement mode GaN transistor Preliminary Datasheet
Features 100V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 15 mω I DS(max) = 45 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationFeatures. Drain SOT23 D. Gate. Source. Part Number Case Packaging DMG3414UQ-7 SOT23 3,000/Tape & Reel DMG3414UQ-13 SOT23 10,000/Tape & Reel
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V (BR)DSS 2V Description R DS(ON) max 25mΩ @ V GS = 4.5V I D max T A = +25 C 9A 29mΩ @ V GS = 2.5V 5.5A 37mΩ @ V GS = 1.8V 4.8A This MOSFET is
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationP-Channel 8 V (D-S) MOSFET
Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free
More informationGS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 50 mω I DS(max) = 30 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationP HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
More informationTop View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
More informationFeatures. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationN-Channel 20 V (D-S) MOSFET
Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationPDNM6ET20V05 Dual N-Channel, Digital FET
PDNM6ET2V5 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.
N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationFeatures. Bottom View. Top View Bottom View
YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
More informationSM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.
Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @
More informationN-Channel 100 V (D-S) MOSFET
Si49DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 4 5 D FEATURES
More informationHI-201HS. Features. High Speed, Quad SPST, CMOS Analog Switch. Applications. Ordering Information. Pinout (Switches Shown For Logic 1 Input) FN3123.
HI-HS Data Sheet September 4 FN.4 High Speed, Quad SPST, CMOS Analog Switch The HI-HS is a monolithic CMOS Analog Switch featuring very fast switching speeds and low ON resistance. The integrated circuit
More informationAutomotive P-Channel 20 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQ23ES PRODUCT SUMMARY V DS (V) - 2 R DS(on) ( ) at V GS = - 4.5 V.2 R DS(on) ( ) at V GS = - 2.5 V.8 I D (A) - 3.9 Configuration Single FEATURES Halogen-free
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationGS66504B Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 100 mω I DS(max) = 15 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More information60 V, 310 ma N-channel Trench MOSFET
Rev. 1 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic
More information50 V, 160 ma dual P-channel Trench MOSFET
Rev. 1 23 May 211 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationN-Channel 30-V (D-S) MOSFET
Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient
More informationIRF7338. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel.
PD - 94372C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET 8 2 7 3 6 D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket 1 Description OptiMOS 150V products are class leading power MOSFETs for highest power density and energy efficient
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
More information