Monolithic integration of GaN power transistors integrated with gate drivers
|
|
- Michael Little
- 6 years ago
- Views:
Transcription
1 October 3-5, 2016 International Workshop on Power Supply On Chip (PwrSoC 2016) Monolithic integration of GaN power transistors integrated with gate drivers October 4, 2016 Tatsuo Morita Automotive & Industrial Systems Company Panasonic Corporation
2 Potential Application for WBG semiconductors GaN power transistors are suited for high-frequency applications. Production Normally-off GaN Gate Injection Transistor (GaN-GIT) 600V/15A TO V/15A SMD Proto-type 30V normally-off GaN-GITs (developed in 2014)
3 Advantages of GaN for Power device GaN inherently has superior material properties for Power switching device Unique feature of GaN is 2-Dimensional Electron Gas(2DEG) which serves both high electron density and high electron mobility Maximum Electric Field (MV/cm) Comparison of material properties Bandgap (ev) Si GaN SiC Electron Mobility (cm 2 /Vs) AlGaN/GaN Hetero-junction FET Source Gate Un-doped AlGaN Drain 2DEG channel Un-doped GaN Super-lattice Buffer Si substrate Saturation drift velocity x10 7 (cm/s) Baliga s FOM High sheet carrier density induced by polarization effects at the AlGaN/GaN hetero-interface without any doping GaN-FET can be fabricated on costeffective Si-substrates Normally-on operation
4 Normally-off GaN Gate Injection Transistors - GIT - Gate Injection Transistor (GIT) Recovery characteristics Normally-off operation Vg=0V: p-algan lifts up the potential at the channel. Vg>Vf: Hole injectction Electron generation Large Drain current Very low RonQg RonQg of 600V GIT is 0.7 WnC which is 1/13 of that of the latest SJ-MOSFET. Good Recovery characteritics GIT can be operated as a free-wheeling diode with very small charging current.
5 Power supply Power converter have progressed with overcoming design trade-off among power density and efficiency, cost. To make more advanced, GaN-FETs have been actively investigated. AC V PFC GaN power devices used in Power supply AC-DC Power Supply Isolated DC-DC converter DC12V Bus Today s topic Non-isolated DC-DC converter 1~ 1.2V CPU Totem-pole PFC using GITs reported by Panasonic on PCIM2014 1MHz resonant converter using 600V normally-off GaNs reported by Fraunhofer ISE on ECSCRM2012 5MHz/50A GaN POL converter reported on PCIM2014 GaN POL power IC integrated with gate drivers reported on ISPSD14
6 Size (mm 2 ) For smaller POL converter Increasing frequency greatly helps to reduce the system size. Low RonQg power device and low parasitic inductance are key factors. Advantage by increasing frequency Si-MOS Module Inductor 350nH Compact GaN Module Inductor 170nH GaN 70nH Frequency (MHz)
7 30V-class normally-off GaN-GITs RonQg of developed 30V GaN-GIT is reached to 19.1mΩnC *1. -> 36% smaller than that of reported Si-MOSFET *2. *1 H. Umeda, et al., PCIM2014 *2 S. Xu, et al., International Electron Devices Meeting (IEDM) Technical Digests, 145(2009)
8 Impact of the parasitic inductance Parastic inductance on power loop (L Power_Loop ) increase the spike voltage It limits di/dt and causes gate oscillation, increase noise. Parastic inductance on gate loop (L Gate_Loop ) increase the gate charging time. Parasitic inductance on Power Loop L Power_Loop C out Spike voltage V DS I DS V Spike L Power _ Loop I t DS limit di/dt to keep Vds under BVds causes gate oscillation generate Noise Parasitic inductance on Gate Loop L Gate_Loop Reduction of Lgate_Loop also effectively increase gate charging speed
9 This Work : GaN-based IC with gate driver GaN transistors and GaN gate drivers are integrated to a compact chip Conventional Inductor (L) High-side Transistor (Hi) Capacitor (C) This Work Si-based Gate Drivers Low-side Transistor (Lo) One Chip GaN-based IC
10 Voltage (V) Impact of Integration : Small Parasitic Inductances Switching speed is increased by reduction of parasitic inductances V gate driver Gate Drivers Simulated turn-on switching waveform L1 L2 L3 L4 Parasitic Inductors Vin GaN Transistors L Vout C L1~L4 = 1nH 15.8V/ns L1~L4 = 4.5nH 12.5V/ns Time (ns) 12V 1.8V Iout = 6A 2MHz operation
11 Operation Loss (W) Operation Loss (W) Impact of Integration : Small Parasitic Inductances Operation loss is reduced by the reduction of parasitic inductances V 1.8V Simulated operation loss 2MHz L1+L2 (L3=L4=0) L3+L4 (L1=L2=0) Parasitic Inductance (nh) Parasitic Inductance (nh)
12 GaN Gate Driver : DCFL (Direct Coupled FET Logic) High power consumption in GaN gate driver of DCFL. Circuit Design Time Chart Iin DCFL Large Wg Switching Power Device VG 5V D-Tr. Charge Current Vout tr tf VG E-Tr.1 E-Tr.4 Vout Iin High Short-Circuit Current Short-Circuit Current Flowing
13 GaN Gate Driver : DCFL with Buffer Amplifier Low power consumption in GaN gate driver by buffer amplifier. Circuit Design Time Chart DCFL Buffer Amplifier Iin Small Wg Large Wg Switching Power Device VG 5V VG D-Tr. E-Tr.1 E-Tr.2 E-Tr.3 E-Tr.4 Vout Vout tr tf Iin Low High Short-Circuit Current Short-Circuit Current Flowing
14 GaN Device Structure and Characteritics Ids Ids (A/mm) Ron Ron (Ωmm) D-mode HFET and E-mode GIT are monolithically fabricated. Device Structure Device Characteristics GaN-GIT Gate GaN-HFET Schottky Gate S D S AlGaN D p-algan GaN Buffer layer Isolation layer Si Substrate 1E+2 1E+0 1E-2 1E-4 1E-6 1E-8 HFET HFET 1E Vgs (V) GIT GIT
15 Operation Characteristics of GaN Gate Driver Voltage (V) GaN gate driver is about 40% faster than Si gate driver. 6 5 Vin tr=7ns tf=5ns C load :1500pF Vout -1-2 Pulth Width:50ns time (ns)
16 Power Power Consumption of of Gate Driver [W] (W) Low Consumption of GaN Gate Driver Power consumption is reduced about 98.5% by using GaN DCFL with buffer amplifier Without buffer amplifier 98.5% Reduction With buffer amplifier duty duty (%) [%] High t1 duty ratio = t1 / t2 Low t2 Gate Driver Output Voltage
17 GaN-based DC-DC Converter IC Chip photograph Gate Driver for High side High side Transistor Module layout with GaN-based IC Driver High-GIT Driver Low-GIT Inductor Gate Driver Low side Transistor for Low side 1mm Circuit diagram Integration GaN-based IC Inductor Compact chip size is 5.1mm x 2.3mm GaN-based IC reduces the system size
18 Operating Efficiencies of DC-DC Converter Efficiency (%) Peak efficiency of 88.2% is achieved with 12V - 1.8V DC- DC conversion at 2MHz V 1.8V DCDC down conversion 1MHz 2MHz 3MHz Load Current (A) This work Discrete
19 Operation Loss (W) Analyzed operating loss of GaN-based IC Efficiency (%) Switching loss have been reduced 15% by using GaN-based DC- DC converter IC % 88.2% 88 12V 1.8V, W 0.68W 1 2 Discrete This Work Switching Loss Eoss Conduction Loss
20 Summary Compact GaN-based DC-DC Converter IC with High Speed Gate Drivers for Highly Efficient DC-DC Converters GaN Gate Driver GaN-based IC DCFL with buffer amplifier Monolithically fabrication of HFET and GIT High speed switching (tr + tf = 12ns) 5.1mm X 2.3mm Compact chip size Peak Efficiency (12V-1.8V) : 88.2%@2MHz This work is partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Japan, under the Strategic Development of Energy Conservation Technology Project.
Unlocking the Power of GaN PSMA Semiconductor Committee Industry Session
Unlocking the Power of GaN PSMA Semiconductor Committee Industry Session March 24 th 2016 Dan Kinzer, COO/CTO dan.kinzer@navitassemi.com 1 Mobility (cm 2 /Vs) EBR Field (MV/cm) GaN vs. Si WBG GaN material
More informationSi, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators
2016 IEEE Proceedings of the 62nd IEEE International Electron Devices Meeting (IEDM 2016), San Francisco, USA, December 3-7, 2016 Si, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators
More informationPitch Pack Microsemi full SiC Power Modules
Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy
More informationThe Quest for High Power Density
The Quest for High Power Density Welcome to the GaN Era Power Conversion Technology Drivers Key design objectives across all applications: High power density High efficiency High reliability Low cost 2
More informationCustomized probe card for on-wafer testing of AlGaN/GaN power transistors
Customized probe card for on-wafer testing of AlGaN/GaN power transistors R. Venegas 1, K. Armendariz 2, N. Ronchi 1 1 imec, 2 Celadon Systems Inc. Outline Introduction GaN for power switching applications
More informationBreaking Speed Limits with GaN Power ICs March 21 st 2016 Dan Kinzer, COO/CTO
Breaking Speed Limits with GaN Power ICs March 21 st 2016 Dan Kinzer, COO/CTO dan.kinzer@navitassemi.com 1 Efficiency The Need for Speed Tomorrow? Today 100kHz 1MHz 10MHz Bulky, Heavy Small, Light & Expensive
More informationCustomized probe card for on wafer testing of AlGaN/GaN power transistors
Customized probe card for on wafer testing of AlGaN/GaN power transistors R. Venegas 1, K. Armendariz 2, N. Ronchi 1 1 imec, 2 Celadon Systems Inc. Presented by Bryan Root 2 Outline Introduction GaN for
More informationAdvanced Silicon Devices Applications and Technology Trends
Advanced Silicon Devices Applications and Technology Trends Gerald Deboy Winfried Kaindl, Uwe Kirchner, Matteo Kutschak, Eric Persson, Michael Treu APEC 2015 Content Silicon devices versus GaN devices:
More information600V GaN Power Transistor
600V GaN Power Transistor Sample Available Features Normally-Off Current-Collapse-Free Zero Recovery GaN Power Transistor (TO220 Package) ID(Continuous) : 15A RDS(on) : 65m Qg : 11nC Applications Power
More informationGaAs PowerStages for Very High Frequency Power Supplies. Greg Miller Sr. VP - Engineering Sarda Technologies
GaAs PowerStages for Very High Frequency Power Supplies Greg Miller Sr. VP - Engineering Sarda Technologies gmiller@sardatech.com Agenda Case for Higher Power Density Voltage Regulators Limitations of
More information2nd-Generation Low Loss SJ-MOSFET with Built-In Fast Diode Super J MOS S2FD Series
2nd-Generation Low Loss SJ-MOSFET with Built-In Fast Diode Super J MOS WATANABE, Sota * SAKATA, Toshiaki * YAMASHITA, Chiho * A B S T R A C T In order to make efficient use of energy, there has been increasing
More informationUnleash SiC MOSFETs Extract the Best Performance
Unleash SiC MOSFETs Extract the Best Performance Xuning Zhang, Gin Sheh, Levi Gant and Sujit Banerjee Monolith Semiconductor Inc. 1 Outline SiC devices performance advantages Accurate test & measurement
More informationDrive and Layout Requirements for Fast Switching High Voltage MOSFETs
Drive and Layout Requirements for Fast Switching High Voltage MOSFETs Contents Introduction SuperJunction Technologies Influence of Circuit Parameters on Switching Characteristics Gate Resistance Clamp
More information235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength
Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC
More informationHigh Frequency GaN-Based Power Conversion Stages
PwSoC Cork 2008 High Frequency GaN-Based Power Conversion Stages Dr. Michael A. Briere ACOO Enterprises LLC 1 Anatomy of a power device driven revolution in power electronics Enabling Rapid Commercialization
More informationGaN Transistors for Efficient Power Conversion
GaN Transistors for Efficient Power Conversion Agenda How GaN works Electrical Characteristics Design Basics Design Examples Summary 2 2 How GaN Works 3 3 The Ideal Power Switch Block Infinite Voltage
More informationSymbol Parameter Typical
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications
More informationDesigning reliable and high density power solutions with GaN. Created by: Masoud Beheshti Presented by: Paul L Brohlin
Designing reliable and high density power solutions with GaN Created by: Masoud Beheshti Presented by: Paul L Brohlin What will I get out of this presentation? Why GaN? Integration for System Performance
More informationTPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
More informationProgress Energy Distinguished University Professor Jay Baliga. April 11, Acknowledgements
Progress Energy Distinguished University Professor Jay Baliga April 11, 2019 Acknowledgements 1 Outline SiC Power MOSFET Breakthroughs achieved at NCSU PRESiCE: SiC Power Device Manufacturing Technology
More informationGaN is Crushing Silicon. EPC - The Leader in GaN Technology IEEE PELS
GaN is Crushing Silicon EPC - The Leader in GaN Technology IEEE PELS 2014 www.epc-co.com 1 Agenda How egan FETs work Hard Switched DC-DC converters High Efficiency point-of-load converter Envelope Tracking
More informationTPH3207WS TPH3207WS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 35 Q rr (nc) 175 Features Low Q rr Free-wheeling diode not required Quiet Tab for reduced EMI at high dv/dt GSD pin layout improves high speed design
More informationAppendix: Power Loss Calculation
Appendix: Power Loss Calculation Current flow paths in a synchronous buck converter during on and off phases are illustrated in Fig. 1. It has to be noticed that following parameters are interrelated:
More informationPartial printouts for our website visitors. Send your comments and requests to 3j.com S L
Power Train Scaling for High Frequency Switching, Impact on Power Controller Design By Dr. Sami Ajram SL3J S, S.A.R.L. Pôle d Activité Y. Morandat 1480 Avenue d ARMENIE, 13120 Gardanne, France Email:
More informationGaN Power ICs at 1 MHz+: Topologies, Technologies and Performance
GaN Power ICs at 1 MHz+: Topologies, Technologies and Performance PSMA Industry Session, Semiconductors Dan Kinzer, CTO/COO dan.kinzer@navitassemi.com March 2017 Power Electronics: Speed & Efficiency are
More informationDesigning High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger
Designing High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger Topics Why GaN? Integration for Higher System Performance Application Examples Taking GaN beyond
More informationDemands for High-efficiency Magnetics in GaN Power Electronics
APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1 st generation 600V GaN-on-Si HEMT
More informationHow GaN-on-Si can help deliver higher efficiencies in power conversion and power management
White Paper How GaN-on-Si can help deliver higher efficiencies in power conversion and power management Introducing Infineon's CoolGaN Abstract This paper describes the benefits of gallium nitride on silicon
More informationTaking advantage of SiC s high switching speeds with optimizations in measurement, layout, and design
Taking advantage of SiC s high switching speeds with optimizations in measurement, layout, and design Dr. Kevin M. Speer Global Manager of Technology Strategy Power Semiconductors Power Electronics Conference
More informationAdvantages of Using Gallium Nitride FETs in Satellite Applications
White Paper Advantages of Using Gallium Nitride FETs in Satellite Applications Kiran Bernard, Applications Engineer, Industrial Analog & Power Group, Renesas Electronics Corp. February, 2018 Abstract Silicon
More informationA Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA
A Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA As presented at PCIM 2001 Today s servers and high-end desktop computer CPUs require peak currents
More informationField-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
More informationSymbol Parameter Typical
PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 110 Q rr (nc) 54 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 63. Qrr (nc) typ 136. * Dynamic R(on)
600V Cascode GaN FET in TO-247 (source tab) Not recommended for new designs see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer
More informationS L YSTEMS. Power Train Scaling for High Frequency Switching, Impact on Power Controller. By Dr. Sami Ajram
Power Train Scaling for High Frequency Switching, Impact on Power Controller Design SL3J S, S.A.R.L. 5 Pl. de la Joliette 13002 Marseille, France Email: By Dr. Sami Ajram Oct 2010
More informationNumerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD
Numerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD Kenichi Takahama and Ichiro Omura Kyushu Institute of Technology Senshui-cho 1-1, Tobata-ku, Kitakyushu
More informationHow to Design Power Electronics
How to Design Power Electronics The HF in Power Semiconductor Modeling and Design September 3, 2015 Ingmar Kallfass Institute of Robust Power Semiconductor Systems University of Stuttgart Outline Semiconductor-Based
More informationTRENCHSTOP 5 boosts efficiency in Home Appliance, Solar and Welding Applications
TRENCHSTOP 5 boosts efficiency in Home Appliance, Solar and Welding Applications Davide Chiola - Senior Mgr IGBT Application Engineering Mark Thomas Product Marketing Mgr Discrete IGBT Infineon Technologies
More informationApplication Note 0009
Recommended External Circuitry for Transphorm GaN FETs Application Note 9 Table of Contents Part I: Introduction... 2 Part II: Solutions to Suppress Oscillation... 2 Part III: The di/dt Limits of GaN Switching
More informationGaN based Power Devices. Michael A. Briere. RPI CFES Conference
GaN based Power Devices Michael A. Briere ACOO Enterprises LLC Under contract to International Rectifier RPI CFES Conference January 25, 2013 1 Motivation : Potential Energy Savings Worldwide M.A. Briere
More informationThinPAK 8x8. New High Voltage SMD-Package. April 2010 Version 1.0
ThinPAK 8x8 New High Voltage SMD-Package Version 1.0 Content Introduction Package Specification Thermal Concept Application Test Conditions Impact on Efficiency and EMI Switching behaviour Portfolio and
More informationGaN MMIC PAs for MMW Applicaitons
GaN MMIC PAs for MMW Applicaitons Miroslav Micovic HRL Laboratories LLC, 311 Malibu Canyon Road, Malibu, CA 9265, U. S. A. mmicovic@hrl.com Motivation for High Frequency Power sources 6 GHz 11 GHz Frequency
More informationGaN Power ICs: Integration Drives Performance
GaN Power ICs: Integration Drives Performance Stephen Oliver, VP Sales & Marketing stephen.oliver@navitassemi.com Bodo s Power Conference, Munich December 5 th, 2017 Navitas Semiconductor Inc. World s
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 130. Qrr (nc) typ 54. * Dynamic R(on)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3208PS 650V, 110mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationInternational Workshop on Nitride Semiconductors (IWN 2016)
International Workshop on Nitride Semiconductors (IWN 2016) Sheng Jiang The University of Sheffield Introduction The 2016 International Workshop on Nitride Semiconductors (IWN 2016) conference is held
More informationTPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationCOLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.
MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationTPH3212PS. 650V Cascode GaN FET in TO-220 (source tab)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationHigh Performance ZVS Buck Regulator Removes Barriers To Increased Power Throughput In Wide Input Range Point-Of-Load Applications
WHITE PAPER High Performance ZVS Buck Regulator Removes Barriers To Increased Power Throughput In Wide Input Range Point-Of-Load Applications Written by: C. R. Swartz Principal Engineer, Picor Semiconductor
More informationImproving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications
Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications David Reusch and Johan Strydom Efficient Power Conversion Corporation (EPC), El Segundo, CA, USA.
More informationSome Key Researches on SiC Device Technologies and their Predicted Advantages
18 POWER SEMICONDUCTORS www.mitsubishichips.com Some Key Researches on SiC Device Technologies and their Predicted Advantages SiC has proven to be a good candidate as a material for next generation power
More informationLecture-45. MOS Field-Effect-Transistors Threshold voltage
Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied
More informationWide Band-Gap (SiC and GaN) Devices Characteristics and Applications. Richard McMahon University of Cambridge
Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications Richard McMahon University of Cambridge Wide band-gap power devices SiC : MOSFET JFET Schottky Diodes Unipolar BJT? Bipolar GaN : FET
More informationTemperature-Dependent Characterization of SiC Power Electronic Devices
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali 1 chinthavalim@ornl.gov Burak Ozpineci 2 burak@ieee.org Leon M. Tolbert 2, 3 tolbert@utk.edu 1 Oak Ridge
More informationDigital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology
K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm
More informationSiC Transistor Basics: FAQs
SiC Transistor Basics: FAQs Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. Oct. 9, 2013 Sam Davis
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 60. Qrr (nc) typ 136. Qg (nc) typ 28. * Dynamic RDS(on)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationGaN Power Switch & ALL-Switch TM Platform. Application Notes AN01V650
GaN Power Switch & ALL-Switch TM Platform Application Notes AN01V650 Table of Contents 1. Introduction 3 2. VisIC GaN Switch Features 4 2.1 Safe Normally OFF circuit : 5 2.2 D-Mode GaN Transistor: 8 3.
More informationGaN Based Power Conversion: Moving On! Tim McDonald APEC Key Component Technologies for Power Electronics in Electric Drive Vehicles
1 GaN Based Power Conversion: Moving On! Key Component Technologies for Power Electronics in Electric Drive Vehicles Tim McDonald APEC 2013 2 Acknowledgements Collaborators: Tim McDonald (1), Han S. Lee
More informationEfficiency improvement with silicon carbide based power modules
Efficiency improvement with silicon carbide based power modules Zhang Xi*, Daniel Domes*, Roland Rupp** * Infineon Technologies AG, Max-Planck-Straße 5, 59581 Warstein, Germany ** Infineon Technologies
More informationImpact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors
11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings) Silicon Valley, December 5, 2018 Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors *, A. Kumar,
More informationHigh-Temperature and High-Frequency Performance Evaluation of 4H-SiC Unipolar Power Devices
High-Temperature and High-Frequency Performance Evaluation of H-SiC Unipolar Power Devices Madhu Sudhan Chinthavali Oak Ridge Institute for Science and Education Oak Ridge, TN 37831-117 USA chinthavalim@ornl.gov
More informationFundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
More informationIXZ421DF12N100 RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC421 Driver combined with a DE37-12N12A MOSFET Gate driver matched to MOSFET Features Isolated Substrate high isolation voltage (>V) excellent thermal transfer Increased
More informationNormally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.2, APRIL, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.2.221 ISSN(Online) 2233-4866 Normally-Off Operation of AlGaN/GaN
More informationSemiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials
Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials Kjeld Pedersen Department of Physics and Nanotechnology, AAU SEMPEL Semiconductor Materials for Power Electronics
More informationSiC-JFET in half-bridge configuration parasitic turn-on at
SiC-JFET in half-bridge configuration parasitic turn-on at current commutation Daniel Heer, Infineon Technologies AG, Germany, Daniel.Heer@Infineon.com Dr. Reinhold Bayerer, Infineon Technologies AG, Germany,
More information1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor,
More informationPower of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies
Power of GaN Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies Steve Tom Product Line Manager, GaN Products stom@ti.com Solving power and energy-management
More informationDesigning Reliable and High-Density Power Solutions with GaN
Designing Reliable and High-Density Power Solutions with GaN 1 Detailed agenda Why is GaN Exciting GaN Fundamentals Cost and Reliability Totem Pole PFC Isolated LLC Motor Drive LiDAR Driving GaN Choosing
More informationWide Band-Gap Power Device
Wide Band-Gap Power Device 1 Contents Revisit silicon power MOSFETs Silicon limitation Silicon solution Wide Band-Gap material Characteristic of SiC Power Device Characteristic of GaN Power Device 2 1
More informationVDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 85. QRR (nc) typ 90. QG (nc) typ 10
TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low
More informationWide band gap circuit optimisation and performance comparison
Wide band gap circuit optimisation and performance comparison By Edward Shelton & Dr Patrick Palmer Presentation for SF Bay IEEE Power Electronics Society (PELS) 29 th June 2017 Electronic and Electrical
More informationImproving Totem-Pole PFC and On Board Charger performance with next generation components
Improving Totem-Pole PFC and On Board Charger performance with next generation components Anup Bhalla 1) 1) United Silicon Carbide, Inc., 7 Deer Park Drive, Monmouth Jn., NJ USA E-mail: abhalla@unitedsic.com
More informationPower Semiconductor Devices - Silicon vs. New Materials. Si Power Devices The Dominant Solution Today
Power Semiconductor Devices - Silicon vs. New Materials Jim Plummer Stanford University IEEE Compel Conference July 10, 2017 Market Opportunities for Power Devices Materials Advantages of SiC and GaN vs.
More informationChapter 1. Introduction
Chapter 1 Introduction 1.1 Introduction of Device Technology Digital wireless communication system has become more and more popular in recent years due to its capability for both voice and data communication.
More information500V Three Phase Inverter ICs Based on a New Dielectric Isolation Technique
Proceedings of 1992 International Symposium on Power Semiconductor Devices & ICs, Tokyo, pp. 328-332 13.3 500V Three Phase Inverter ICs Based on a New Dielectric Isolation Technique A.Nakagawa, Y.Yamaguchi,
More informationECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
More informationDepletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
More informationStudents: Yifan Jiang (Research Assistant) Siyang Liu (Visiting Scholar)
Y9.FS1.1: SiC Power Devices for SST Applications Project Leader: Faculty: Dr. Jayant Baliga Dr. Alex Huang Students: Yifan Jiang (Research Assistant) Siyang Liu (Visiting Scholar) 1. Project Goals (a)
More informationPresentation Content Review of Active Clamp and Reset Technique in Single-Ended Forward Converters Design Material/Tools Design procedure and concern
Active Clamp Forward Converters Design Using UCC2897 Hong Huang August 2007 1 Presentation Content Review of Active Clamp and Reset Technique in Single-Ended Forward Converters Design Material/Tools Design
More informationUtilizing GaN transistors in 48V communications DC-DC converter design
Utilizing GaN transistors in 48V communications DC-DC converter design Di Chen, Applications Engineering Manager and Jason Xu, Applications Engineer, GaN Systems - November 25, 2016 As the world s demand
More informationAN OPTIMIZED SPECIFIC MOSFET FOR TELECOMMUNICATION AND DATACOMMUNICATION APPLICATIONS
This paper was originally presented at the Power Electronics Technology Exhibition & Conference, part of PowerSystems World 2005, held October 25-27, 2005, in Baltimore, MD. To inquire about PowerSystems
More informationPERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER
PERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER What I will show you today 200mm/8-inch GaN-on-Si e-mode/normally-off technology
More informationDesign and Characterization of a Three-Phase Multichip SiC JFET Module
Design and Characterization of a Three-Phase Multichip SiC JFET Module Fan Xu* fxu6@utk.edu Jing Wang* jwang50@utk.edu Dong Jiang* djiang4@utk.edu Fred Wang* fred.wang@utk.edu Leon Tolbert* tolbert@utk.edu
More informationRecent Approaches to Develop High Frequency Power Converters
The 1 st Symposium on SPC (S 2 PC) 17/1/214 Recent Approaches to Develop High Frequency Power Converters Location Fireworks Much snow Tokyo Nagaoka University of Technology, Japan Prof. Jun-ichi Itoh Dr.
More informationY9.FS1.2.1: GaN Low Voltage Power Device Development. Sizhen Wang (Ph.D., EE)
Y9.FS1.2.1: GaN Low Voltage Power Device Development Faculty: Students: Alex. Q. Huang Sizhen Wang (Ph.D., EE) 1. Project Goals The overall objective of the GaN power device project is to fabricate and
More informationGate Drive Optimisation
Gate Drive Optimisation 1. Background Driving of gates of MOSFET, IGBT and SiC/GaN switching devices is a fundamental requirement in power conversion. In the case of ground-referenced drives this is relatively
More informationSSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
More informationLecture 4 ECEN 4517/5517
Lecture 4 ECEN 4517/5517 Experiment 3 weeks 2 and 3: interleaved flyback and feedback loop Battery 12 VDC HVDC: 120-200 VDC DC-DC converter Isolated flyback DC-AC inverter H-bridge v ac AC load 120 Vrms
More informationIGBT Module Chip Improvements for Industrial Motor Drives
IGBT Module Chip Improvements for Industrial Motor Drives John F. Donlon Powerex, Inc. 173 Pavilion Lane Youngwood, PA USA Katsumi Satoh Mitsubishi Electric Corporation Power Semiconductor Device Works
More informationD AB Z DETAIL "B" DETAIL "A"
QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B
More information55:041 Electronic Circuits
55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationVDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 47. QG (nc) typ 10
TP65H150LSG 650V GaN FET PQFN Series Preliminary Datasheet Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT
More informationMEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I
MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available
More informationGaN in Practical Applications
in Practical Applications 1 CCM Totem Pole PFC 2 PFC: applications and topology Typical AC/DC PSU 85-265 V AC 400V DC for industrial, medical, PFC LLC 12, 24, 48V DC telecomm and server applications. PFC
More informationDESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION. 500KHz, 18V, 2A Synchronous Step-Down Converter
DESCRIPTION The is a fully integrated, high-efficiency 2A synchronous rectified step-down converter. The operates at high efficiency over a wide output current load range. This device offers two operation
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More information