di/dt Nex TM-v Series: YNV12T05

Transcription

1 Features PRODUCTS: Nex TM FAMILY Applications Intermediate Bus Architectures Telecommunications Data Communications Servers, Workstations Distributed Power Architectures Benefits High efficiency no heat sink required Reduces Total Solution Board Area Minimizes Part Numbers in Inventory Delivers up to A (8.W) Industry-standard footprint and pinout Single-in-Line (SIP) Package:.9 x. x. (.8mm x.mm x.mm) Weight:.8 oz [. g] Synchronous Buck Converter Topology Start up into pre-biased output No minimum load required Operating ambient temperature: - C to 8 C Remote output sense Remote ON/OFF Fixed frequency operation Auto-reset output over-current protection Auto-reset over-temperature protection High reliability, MTBF = TBD Million Hours All materials meet UL9, V- flammability rating UL 9 recognition in U.S. & Canada, and DEMKO certification per IEC/EN 9 (pending) Description The Nex TM -v Series of non-isolated DC/DC modules deliver up to A of output current in an industry-standard through hole (SIP) package. The YNVT modules of the Nex TM -v Series operate from a 9.Vdc Vdc input. These modules are ideal choices for Intermediate Bus Architectures where Point-of-Load power delivery is generally a requirement. They provide a resistor-programmable regulated output voltage of.7v to.v. The Nex TM -v Series of modules provide exceptional thermal performance, even in high temperature environments with minimal airflow. This is accomplished through the use of circuit, packaging and processing techniques to achieve ultra-high efficiency, excellent thermal management and a very sleek body profile. The sleek body profile and the preclusion of heat sinks minimize impedance to system airflow, thus enhancing cooling for both upstream and downstream devices. The use of % automation for assembly, coupled with advanced power electronics and thermal design, results in a product with extremely high reliability. Rev Page of 7

2 Electrical Specifications Conditions: T A =ºC, Airflow= LFM ( m/s), Vin= Vdc, Vout =.7 -.V, unless otherwise specified. PARAMETER NOTES MIN TYP MAX UNITS ABSOLUTE MAXIMUM RATINGS Input Voltage Continuous -. Vdc Operating Ambient Temperature - 8 C Storage Temperature - C FEATURE CHARACTERISTICS Switching Frequency 8 khz Output Voltage Programming Range By external resistor, See Trim Table.7. Vdc Remote Sense Compensation. Vdc Turn-On Delay Time Full resistive load With Vin = (Module Enabled, then Vin applied) From Vin = Vin(min) to Vo=.* Vo(nom). ms With Enable (Vin = Vin(nom) applied, then enabled) From enable to Vo=.*Vo(nom). ms Rise time From % to 9%, full resistive load. ms ON/OFF Control Module Off. V IN Vdc Module On -.8 Vdc Note:. The output voltage should not exceed.v (taking into account both the programming and remote sense compensation).. Note that start-up time is the sum of turn-on delay time and rise time.. Module is on if ON/OFF pin is left open. Rev Page of 7

3 Electrical Specifications (continued) Conditions: T A =ºC, Airflow= LFM ( m/s), Vin= Vdc, Vout =.7 -.V, unless otherwise specified. PARAMETER NOTES MIN TYP MAX UNITS INPUT CHARACTERISTICS Operating Input Voltage Range 9. Vdc Input Under Voltage Lockout Turn-on Threshold 9. Vdc Turn-off Threshold 8. Vdc Maximum Input Current Adc dc In V OUT =. Vdc.9 Adc V OUT =. Vdc. Adc V OUT =. Vdc. Adc V OUT =. Vdc. Adc V OUT =.8 Vdc. Adc V OUT =. Vdc. Adc V OUT =. Vdc.8 Adc V OUT =. Vdc.7 Adc V OUT =.7Vdc. Adc Input Stand-by Current (module disabled) ma Input No Load Current (module enabled) V OUT =. Vdc 8 ma V OUT =. Vdc ma V OUT =. Vdc ma V OUT =. Vdc ma V OUT =.8 Vdc ma V OUT =. Vdc ma V OUT =. Vdc ma V OUT =. Vdc ma V OUT =.7Vdc ma Input Reflected-Ripple Current - s i See Fig. E for setup. (BW=MHz) ma P-P Rev Page of 7

4 Electrical Specifications (continued) Conditions: T A =ºC, Airflow= LFM ( m/s), Vin= Vdc, Vout =.7 -.V, unless otherwise specified. PARAMETER NOTES MIN TYP MAX UNITS OUTPUT CHARACTERISTICS Output Voltage Set Point (no load) -. Vout +. %Vout Output Regulation Over Line Full resistive mv Over Load From no load to full load. %Vout Output Voltage Range (Over all operating input voltage, resistive load and temperature conditions until end of life ) %Vout Output Ripple and Noise - MHz bandwidth (Fig. E) Over line, load and temperature Peak-to-Peak V OUT =. Vdc mv P-P Peak-to-Peak V OUT =. Vdc mv P-P External Load Capacitance Plus full load (resistive) Min. ESR > mω µf Min. ESR > mω µf Output Current Range Adc Output Current Limit Inception (I OUT ) 8. A Output Short- Circuit Current Short= mω, continuous A rms DYNAMIC RESPONSE Iout step from.a to A with di/dt = A/µS Co = 7µF ceramic + µf ceramic mv Settling Time (V OUT < % peak deviation) µs Iout step change from A.A with di/dt = - A/µS Co = 7µF ceramic + µf ceramic mv Settling Time (V OUT < % peak deviation) µs EFFICIENCY Full load (A) V OUT =. Vdc 9. % V OUT =. Vdc 8. % V OUT =. Vdc 8. % V OUT =. Vdc 8. % V OUT =.8 Vdc 8. % V OUT =. Vdc 78. % V OUT =. Vdc 7. % V OUT =. Vdc 7. % V OUT =.7 Vdc 8. % Note:. See attached waveforms for dynamic response and settling time for different output voltages. Rev Page of 7

5 Operation Input and Output Impedance Nex TM -v Series module should be connected via a low impedance to DC power source. In many applications, the inductance associated with the distribution from the power source to the input of the module can affect the stability of the module. It is recommended to use decoupling capacitors in order to ensure stability of the module and reduce input ripple voltage. Internally, the Module has µf of Low ESR Ceramic Capacitance on board. In a typical application, low - ESR tantalum or POS capacitors will be sufficient to provide adequate ripple voltage filtering at the input of the module. However, very low ESR ceramic capacitors 7µF-µF are recommended at the input of the module in order to minimize the input ripple voltage. They should be placed as close as possible to the input pins of the module. YNVT has been designed for stable operation with or without external capacitance. Low ESR ceramic capacitors placed as close as possible to the load (Min 7µF) are recommended for improved transient performance and lower output voltage ripple. It is important to keep low resistance and low inductance PCB traces when connecting the load to the output pins of the module in order to maintain good load regulation. ON/OFF (Pin ) The ON/OFF pin is used to turn the power module on or off remotely via a system signal. There are two remote control options available, positive logic (standard option) and negative logic, and both are referenced to GND. Typical connections are shown in Fig. A. The positive logic version turns the module on when the ON/OFF pin is at a logic high or left open, and turns the module off when at a logic low or shorted to GND. Vin CONTROL INPUT R* Vin ON/OFF GND TM Nex -v Series Converter (Top View) Vout TRIM Fig. A: Circuit configuration for ON/OFF function. The negative logic version turns the module on when the ON/OFF pin is at a logic low or left open, and turns module off when the ON/OFF pin is at a logic high or connected to Vin. ON/OFF pin is internally pulled-up to Vin for positive logic version, and pulled-down for negative logic version. A TTL or CMOS logic gate, open collector (open drain) transistor can be used to drive ON/OFF pin. When using open collector (open drain) transistor with a negative logic option, add a pull-up resistor (R*) of 7K to Vin as shown in Fig. A; This device must be capable of: - sinking up to.ma at a low level voltage of.8v - sourcing up to.ma at a high logic level of.v V - sourcing up to.7ma when connected to Vin. Output Voltage Programming (Pin ) The output voltage can be programmed from.7v to.v by connecting an external resistor between the TRIM pin (Pin ) and the GND pin (Pin ); see Fig. C. A trim resistor, R TRIM, for a desired output voltage can be calculated using the following equation:. RTRIM = [kω] (VO-REQ -.7) where, RTRIM = Required value of trim resistor [kω] VO REQ = Desired (trimmed) output voltage [V] Rload Rev Page of 7

6 Vin Vin ON/OFF GND TM Nex -v Series Converter (Top View) Vout TRIM R TRIM Rload VCTRL = Control voltage [V] REXT = External resistor between the TRIM pin and the voltage source; the value can be chosen depending on the required output voltage range [kω] Control voltages with REXT = and REXT = shown in Table. K are Fig. C: Configuration for programming output voltage. Note that the tolerance of a trim resistor directly affects the output voltage tolerance. It is recommended to use standard % or.% resistors; for tighter tolerance, two resistors in parallel are recommended rather than one standard value from Table. The ground pin of the trim resistor should be connected directly to the module GND pin (Pin ) with no voltage drop in between. Table provides the trim resistor values for popular output voltages. Table : Control Voltage [Vdc] V -REG [V] V CTRL (R EXT = ) V CTRL (R EXT = K) Table : Trim Resistor Value V -REG [V] R TRIM [kω] The Closest Standard Value [kω].7 open The output voltage can also be programmed by an external voltage source. To make trimming less sensitive, a series external resistor (Rext) is recommended between the TRIM pin and the programming voltage source. The control voltage can be calculated by the formula: (+ REXT)(VO-REQ -.7) VCTRL =.7 [V] where, Rev Page of 7

7 Protection Features Input Under-Voltage Lockout Input under-voltage lockout is standard with this module. The module will shut down when the input voltage drops below a pre-determined voltage; it will start automatically when Vin returns to a specified range. The input voltage must be typically 9.V for the module to turn on. Once the module has been turned on, it will shut off when the input voltage drops below typically 8.V. Output Over-Current Protection (OCP) The module is protected against over-current and short circuit conditions. Upon sensing an overcurrent condition, the module will enter hiccup mode. Once over-load or short circuit condition is removed, Vout will return to nominal value. Over-Temperature Protection (OTP) The module will shut down under an overtemperature condition to protect itself from overheating caused by operation outside the thermal derating curves, or operation in abnormal conditions such as system fan failure. After the module has cooled to a safe operating temperature, it will automatically restart. Safety Requirements The module meets North American and International safety regulatory requirements per UL9 and EN9. The maximum DC voltage between any two pins is Vin under all operating conditions. Therefore, the unit has ELV (extra low voltage) output; it meets SELV requirements under the condition that all input voltages are ELV. The module is not internally fused. To comply with safety agencies requirements, a recognized fuse with a maximum rating of 7. Amps must be used in series with the input line. Characterization General Information The module has been characterized for many operational aspects, to include thermal derating (maximum load current as a function of ambient temperature and airflow) for vertical and horizontal mounting, efficiency, start-up and shutdown parameters, output ripple and noise, transient response to load step-change, overload and short circuit. The figures are numbered as Fig. x.y, where x indicates the different output voltages, and y associates with specific plots (y = for the vertical thermal derating, ). For example, Fig. x. will refer to the vertical thermal derating for all the output voltages in general. The following pages contain specific plots or waveforms associated with the module. Additional comments for specific data are provided below. Test Conditions All thermal and efficiency data presented were taken with the module soldered to a test board. Specifically a. thick printed wiring board (PWB) with four layers. The top and bottom layers were not metalized. The two inner layers, comprising two-ounce copper, were used to provide traces for connectivity to the module. The lack of metalization on the outer layers as well as the limited thermal connection ensured that heat transfer from the module to the PWB was minimized. This provides a worst-case but consistent scenario for thermal derating purposes. All measurements requiring airflow were made in di/dt s vertical and horizontal wind tunnel facilities using Infrared (IR) thermography and thermocouples for thermometry. Ensuring components on the module do not exceed their ratings is important to maintaining high reliability. If one anticipates operating the module at or close to the maximum loads specified in the derating curves, it is prudent to check actual Rev Page 7 of 7

8 operating temperatures in the application. Thermographic imaging is preferable; if this capability is not available, then thermocouples may be used. di/dt recommends the use of AWG # gauge thermocouples to ensure measurement accuracy. Careful routing of the thermocouple leads will further minimize measurement error. Refer to Fig. D for optimum measuring thermocouple location. Thermal Derating Load current vs. ambient temperature and airflow rates are given in Figs. x. to x. for maximum temperature of C. Ambient temperature was varied between C and 8 C, with airflow rates from to LFM (.m/s to.m/s), and vertical and horizontal module mounting. The airflow during the testing is parallel to the long axis of the module, going from input pins to output pins. For each set of conditions, the maximum load current was defined as the lowest of: (i) The output current at which any MOSFET temperature does not exceed a maximum specified temperature ( C) as indicated by the thermographic image, or (ii) The maximum current rating of the module (A) During normal operation, derating curves with maximum FET temperature less than or equal to C should not be exceeded. Temperature on the PCB at the thermocouple location shown in Fig. D should not exceed C in order to operate inside the derating curves. Efficiency Figure x. shows the efficiency vs. load current plot for ambient temperature of ºC, airflow rate of LFM ( m/s) and input voltages of 9.V, V and V. Power Dissipation Fig. x. shows the power dissipation vs. load current plot for Ta = ºC, airflow rate of LFM ( m/s) with vertical mounting and input voltages of 9.V, V and V. Ripple and Noise The output voltage ripple waveform is measured at full rated load current. Note that all output voltage waveforms are measured across a µf ceramic capacitor. The output voltage ripple and input reflected ripple current waveforms are obtained using the test setup shown in Fig. E. i S µh source inductance Vsource C IN x 7µF ceramic capacitor Vin GND TM Nex -v Series DC/DC Converter µf ceramic capacitor C O 7µF ceramic capacitor Fig. E: Test Set-up for measuring input reflected ripple currents, i s and output voltage ripple. Vout GND Vout Fig. D: Location of the thermocouple for thermal testing. Rev Page 8 of 7

9 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C. Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C..9 Efficiency V V Power Dissipation [W] V V.7 Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page 9 of 7

10 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

11 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C..9 Efficiency V V Power Dissipation [W] V V.7 Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page of 7

12 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

13 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C. Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency V V Power Dissipation [W].... V V.. Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page of 7

14 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

15 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency V V Power Dissipation [W].... V V.. Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page of 7

16 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

17 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..8V.: Available load current vs. ambient temperature and airflow rates for Vout =.8V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..8V.: Available load current vs. ambient temperature and airflow rates for Vout =.8V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency V V Power Dissipation [W].... V V.. Fig..8V.: Efficiency vs. load current and input voltage for Vout =.8V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..8V.: Power Loss vs. load current and input voltage for Vout =.8V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page 7 of 7

18 Fig..8V.: Turn-on transient for Vout =.8V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..8V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.8V. Time scale: µs/div. Fig..8V.7: Output voltage response for Vout =.8V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..8V.8: Output voltage response for Vout =.8V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page 8 of 7

19 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency V V Power Dissipation [W].... V V.. Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page 9 of 7

20 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

21 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency.7.7. V V Power Dissipation [W]... V V.. Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page of 7

22 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

23 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..V.: Available load current vs. ambient temperature and airflow rates for Vout =.V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency.7.7. V V Power Dissipation [W]... V V.. Fig..V.: Efficiency vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..V.: Power Loss vs. load current and input voltage for Vout =.V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page of 7

24 Fig..V.: Turn-on transient for Vout =.V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.V. Time scale: µs/div. Fig..V.7: Output voltage response for Vout =.V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..V.8: Output voltage response for Vout =.V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

25 LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) LFM (. m/s) Fig..7V.: Available load current vs. ambient temperature and airflow rates for Vout =.7V module mounted vertically with Vin = V, and maximum MOSFET temperature C Fig..7V.: Available load current vs. ambient temperature and airflow rates for Vout =.7V module mounted horizontally with Vin = V, and maximum MOSFET temperature C Efficiency.7.. V V Power Dissipation [W]... V V.. Fig..7V.: Efficiency vs. load current and input voltage for Vout =.7V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Fig..7V.: Power Loss vs. load current and input voltage for Vout =.7V module mounted vertically with air flowing at a rate of LFM ( m/s) and Ta = C. Rev Page of 7

26 Fig..7V.: Turn-on transient for Vout =.7V with application of Vin at full rated load current (resistive) and µf external capacitance at Vin = V. Top trace: Vin (V/div.); Bottom trace: output voltage (V/div.); Time scale: ms/div. Fig..7V.: Output voltage ripple (mv/div.) at full rated load current into a resistive load with external capacitance µf ceramic and Vin = V for Vout =.7V. Time scale: µs/div. Fig..7V.7: Output voltage response for Vout =.7V to positive load current step change from.a to A with slew rate of A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Fig..7V.8: Output voltage response for Vout =.7V to negative load current step change from A to.a with slew rate of -A/µs at Vin = V. Top trace: output voltage (mv/div.); Bottom trace: load current (A/div.). Co = µf ceramic. Time scale: µs/div. Rev Page of 7

27 Physical Information TOP VIEW FRONT VIEW SIDE VIEW Pad/Pin Connections Pad/Pin # Function Vout Trim GND Vin ON / OFF YNVT Platform Notes YNVT Pinout (Through Hole - SIP) All dimensions are in inches [mm] Connector Material: Copper Connector Finish: Tin Converter Weight:.8 oz [. g] Converter Height:. Max. Recommended Through Hole Via/Pad: Min.. X. [.9 x.] Module Part Numbering Scheme Product Series Input Voltage Mounting Scheme Rated Load Current Enable Logic YNV T Nex TM -v Series 9.V V T Through Hole - SIP A (.7V to. V) Standard (Positive Logic) D Opposite of Standard (Negative Logic) The example above describes P/N YNVT-: 9.V V input, thru-hole (SIP), A at.7v to.v output, and standard enable logic. Please consult factory regarding availability of a specific version. For more information please contact di/dt, a Power-One company 8 Aston Avenue Carlsbad, CA 98 USA USA Toll Free 8-WOW-didt (99-8) support@didt.com The information and specifications contained in this data sheet are believed to be accurate and reliable at the time of publication. However, Power-One, Inc. assumes no responsibility for its use or for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Power-One, Inc. Specifications are subject to change without notice. Copyright Power-One, Inc. Rev Page 7 of 7