CHT-PLUTO-B1230 Preliminary Datasheet High Temperature 1200V/30A Dual SiC MOSFET Module

Transcription

1 The Leader in High Temperature Semiconductor Solutions CHT-PLUTO-B123 Preliminary Datasheet High Temperature 12V/3A Dual SiC MOSFET Module Version: 1.1 General description CHT-PLUTO-B123 is a high temperature 12V/3A Dual Silicon Carbide MOSFET in a single hermetic module. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 6A. This product is guaranteed for normal operation on the full range - C to +21 C (Tj). Each MOSFET has a breakdown voltage in excess of 12V and is capable of switching current up to 3A. They have a on-resistance of 4mΩ at C and 1mΩ at 21 C at VGS=2V. Each MOSFET has an intrinsic body diode. Benefits High power density converters (support of high-frequency switching and reduced cooling) Extended lifetime and high reliability Harsh environments and high temperature power converters Seamless driving with HADES gate driver solutions Applications DC motor drives and actuator control Features (per switch) o o o o Specified from - to +21 C (Tj) V DS Max: 12V Max Continuous Current: Tc 16 C Tc=17 C Max Pulsed Current: 4A Typical On-resistance: R DSon= 2 Tj= C R DSon= 6 Tj=21 C High Speed Switching Voltage control: V GS=-V/2V Low gate charge: Q GS : 44nC Hermetic package with isolated case Functional Block Diagram G2S S2S G1S S1S D2P S2P D1P S1P Note: the schematic shows the intrinsic body diode DC-DC converters Doc. SP-1188 V of 8

2 CHT-PLUTO-B123 PRELIMINARY DATASHEET Package configuration and Pin Description 8 D2P G2S 1 S2S 2 G1S 3 S1S 4 7 S2P 6 D1P S1P Pin ID Pin Name Pin Description Pin Finish 1 G2S Gate of MOSFET 2 (Signal Pin) Nickel 2 S2S Source of MOSFET 2 (Signal Pin) Nickel 3 G1S Gate of MOSFET 1 (Signal Pin) Nickel 4 S1S Source of MOSFET 1 (Signal Pin) Nickel S1P Source of MOSFET 1 (Power Pin) Nickel 6 D1P Drain of MOSFET 1 (Power Pin) Gold 7 S2P Source of MOSFET 2 (Power Pin) Nickel 8 D2P Drain of MOSFET 2 (Power Pin) Gold Body Package body (isolated from Pins) Nickel Doc. SP-1188 V of 8

3 CHT-PLUTO-B123 PRELIMINARY DATASHEET Absolute Maximum Ratings Gate-to-Source voltage V GS -V to 22V Drain-to-Source voltage V DS 12V Max DC Drain current I DS 3A Max Junction temperature T jmax 21 C Power dissipation at Tc=17 C (*) 66W ESD Rating Human Body Model >1kV Operating Conditions (per switch) Gate-to-Source voltage V GS -V to 2V Drain-to-Source voltage V DS - 12V Max DC drain current I DS (Tc=17 C) A Max DC drain current I DS (Tc 16 C) 3A Max pulsed drain current 4A Junction temperature - C to +21 C (*): per switch position and including switching losses Doc. SP-1188 V of 8

4 CHT-PLUTO-B123 PRELIMINARY DATASHEET Electrical characteristics (per switch) Unless otherwise stated, T j = C. Bold figures point out values valid over the whole temperature range (T j =- C to +21 C). Parameter Symbol Condition Min Typ Max Unit Threshold voltage V TH T j= C ; I D = 1mA; V DS = 2V 4.4 V T j=21 C ; I D = 1mA; V DS = 2V 3.82 V Drain cut-off current I DSS V GS =V, V DS=12V, T j= C 8 na V GS =V, V DS =12V, T j=21 C 8 µa Gate leakage current I GSS V GS =2V, V DS =12V, T j= C 1 na V GS =2V, V DS =12V,T j=21 C 4 na Static drain-to-source resistance R DSon V GS =2V, ID=A, T j= C 2 mω V GS =2V, ID=A, T j=21 C 6 mω Breakdown drain-to-source voltage (DC characterization) V BRDS V GS =V; ID = 1 ma 12 V Input capacitance C ISS 2674 pf V GS =V DC, V DS =6V Output capacitance (includes C f = 1 MHz diode capacitance) OSS 12 pf V AC = mv Feedback capacitance C RSS 4 pf Turn-on delay time T d(on) 13 ns Fall time T r 24 ns Turn-off delay time T VDD=6V; VGS= -4/2V d(off) 4 ns ID = 3A Rise time T f RG= 3.3Ω; L = 86µH 38 ns Turn-On Switching Loss E on 39 µj Turn-Off Switching Loss E off 43 µj Internal gate resistance R G V GS =V DC; f = 1 MHz ; V AC = mv 2. Ω Gate to Source Charge Q GS 44 nc Tj= C ;VDD= 6V; Gate to Drain Charge Q GD 82 nc ID = 2A; VGS = -4/2V Total Gate Charge Q G 214 nc Diode forward voltage V F Tj= C; IF=3A 3.3 V Tj=21 C; IF=3A 3.1 V Reverse recovery time T rr Tj= C; V DS=3V; 22 ns Peak reverse recovery current I prr V GS = -V; I F=2A;dI F/dt = 1A/µS 2.3 A Thermal Characteristics Parameter Symbol Condition Min Typ Max Unit Junction-to-Case Thermal resistance MOSFET R ΘJC.7 C/W Doc. SP-1188 V of 8

5 CHT-PLUTO-B123 PRELIMINARY DATASHEET Typical performances (per switch) Vgs=8V 1 Vgs=1V Vgs=12V 1 Vgs=14V Vgs=16V Vgs=18V Vgs=2V Vds [V] Vgs=8V 1 Vgs=1V Vgs=12V 1 Vgs=14V Vgs=16V Vgs=18V Vgs=2V Vds [V] Figure 1: Drain current vs V DS (T j = C) Figure 2: Drain current vs V DS (T j = 1 C) Vgs=8V 1 Vgs=1V Vgs=12V 1 Vgs=14V Vgs=16V Vgs=18V Vgs=2V Vds [V] Vgs=8V 1 Vgs=1V Vgs=12V 1 Vgs=14V Vgs=16V Vgs=18V Vgs=2V Vds [V] Figure 3: Drain current vs V DS (T j = 17 C) Figure 4: Drain current vs V DS (T j = 21 C) Vgs [V] Figure : Drain current vs V GS voltage Doc. SP-1188 V1.1 of 8

6 If [A] Rds [ohm] Rdson [Ohm] CHT-PLUTO-B123 PRELIMINARY DATASHEET Typical performances (cnt d) Figure 6: On-state drain source resistance vs. Drain current (V GS =2V) Temperature [ C] Figure 7: On-state drain source resistance vs. Temperature (V GS =2V; I DS =A) Vf [V] Figure 8: Diode I DS vs V DS (3 rd quadrant;vgs=-v) Doc. SP-1188 V of 8

7 CHT-PLUTO-B123 PRELIMINARY DATASHEET Package Dimensions Ø CISSOID CHT-PLAxxxxx lot/code CISSOID CHT-PLAxxxxx lot/code Origin (,) HM8A dimensions in mm (+/- 1%) Ordering Information Product Name Ordering Reference Package Marking CHT-PLUTO-B123 CHT-PLA2316A-HM8A-T HM8A CHT-PLA2316A Related products Product Name Function Ordering Reference CHT-PLUTO-B122 Dual 12V/2A SiC MOSFET Module CHT-PLA8294A-HM8A-T CHT-PLUTO-C123 12V/3A SiC Async Buck or Boost Power Module CHT-PLA2228A-HM8A-T CHT-PLUTO-C122 12V/2A SiC Async Buck or Boost Power Module CHT-PLA3777A-HM8A-T Doc. SP-1188 V of 8

8 CHT-PLUTO-B123 PRELIMINARY DATASHEET Contact & Ordering CISSOID S.A. Headquarters and contact EMEA: Sales Representatives: CISSOID S.A. Rue Francqui, Mont Saint Guibert - Belgium T : F: sales@cissoid.com Visit our website: Disclaimer Neither CISSOID, nor any of its directors, employees or affiliates make any representations or extend any warranties of any kind, either express or implied, including but not limited to warranties of merchantability, fitness for a particular purpose, and the absence of latent or other defects, whether or not discoverable. In no event shall CISSOID, its directors, employees and affiliates be liable for direct, indirect, special, incidental or consequential damages of any kind arising out of the use of its circuits and their documentation, even if they have been advised of the possibility of such a damage. The circuits are provided as is. CISSOID has no obligation to provide maintenance, support, updates, or modifications. a damage. The circuits are provided as is. CISSOID has no obligation to provide maintenance, support, updates, or modifications. Doc. SP-1188 V of 8