Hewlett. Packard. 1 Components APRIL 1972
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1 Hewlett Packard 1 Components r i APRIL 1972
2 1 GHz 2 GHz 3 GHz GHz 9.3 Noise GHz 1 GHz Figure ftest (max.) (1) Package Style Single Parr db Quad ZIF (a) VSWR (max.) 1.5:l 1.5:l 1.5:l Single (2) 255(2) Pair db Quad ZIF (a) VSWR (max.) 1.:l 1.5:l 1.5:l 2.0:l 1.5:l 1.5:l 1.5:l Single 235(2) 2550(2) Pair db Quad 2552 ZIF (a) VSWR (max.) 1.3:l 1.5: 1 2.0: 1 2.0:l 1.5:l 1.5:l Single 2350(2) 2520(2) Pair db Quad ZIF (a) VSWR (max.) 1.5:l 1.5:l 2.0:l 1.5:l 2.0: 1 4 Microwave Stripline Mixer Quads Part Typical Typical Typical Maximum CT@ ov Maximum Frequency # Package Conversion VBR VF@ ImA AVF@ 5mA (pf) Acj Band 502- # Loss (db) (Volts) (Volts) (mv) Min. Max. (PF) S 227 El X 2277 El Maximum RS (!a Microwave Beam lead Schottky Diodes Part Typical Typical Minimum Minimum Frequency # NF TSS, 2MHz BW VBR IF@Iv Band 502- (db1 (dbm) (Volts) (ma) X 2709(5) Ku O Maximum Typical co@ov RS (pf) ( a) Microwave Detector Diodes (3) Microwave Schottky Diodes Packaged Chip Application Device Part # Type X-Band Mixer Ku-Band Mixer X and Ku-Band Detector LID (pkg.50) Ministrip Part # (pkg. 71) 502- Part # (5) 2710(5) ( ) ( ) NOTES: (1) SSB Receiver Noise Figure measured at ftest using 1.5 db IF Amplifier (30 MHz) and local oscillator power of 1 mw. Pairs and quads matched for ANF50.3 db and A 21~525 a. (2) Extremely low l/f noise. For low I/f noise diodes above 3 GHz use the family detector diodes. (3) Test freauency 10 GHz except 224 which is 2 GHz. Video bandwidth is 2 MHz and video amplifier equivalent noise resistance is 500 a. DC bias is 20 microamps. (4) Low cost detector for intrusion alarms and traffic control radar. 100% tested for VBR>~V and IF >10 ma at 1V. (5) Also available with 100% testing for NF, VSWR and ZIF. Contact your local HP Sales Office. () Available on special request. Contact your local HP Sales Office. 2
3 1 SCHOTTKY DIODES (cont.) Part # Min. Max. Max. Min. Max. Max. 7 Application 502- IR = IopA f = 1 MHz IF=I ma VF=~V VR (psec) Package # (V) (PF) (VI (ma) PA VR 235 5(1) ) Ultra Fast Switching N c 1 N N SchottKy Diodes Device Family Application Part #502- Chip Part # Ultra Fast Switching I VHF-UHF PIN Diodes Application I Low Cost Switching, Attenuating and Modulating 502- I Part # IR Min. Max. Max. Min. Eff. Lifetime Package = VR = 50V. f = 1MHz IF = IF = 50mA IVl (OF) lnsecl d4) () ,300(5) () ,000(5) 15 1 N577() , PIN Diodes Device Family Chip Part # Application Part # Switching Attenuating Mod u lati ng PIN Diodes for Controlled Attenuation c i. 'i Part # Pkg. High Resistance Low Resistance Resistance vs. Max. RS Max. Min. Typ. Typ. Application 502 # IOMA (52) ImA (52) Bias IOOmA CT VBR 7 trr () Min. Max. Min. Max. Min. Max. ( 521 (pf) (V) (ns) (ns) Universal AGC and Attenuating
4 Microwave PIN Diodes Application High Speed Microwave Switching and Attenuating Part # Package Min. VBR Max. CT Maximum Typical Typical (2) CW Switching (3) 502- # (VI (PF) 100mA (a) 7 (ns) trr (ns) Capability (W) (1) : (1) I I ZEi I I 7:; I 09; 5 U n iversa I Switching 1.o and Attenuating 1.o Power Switching and Attenuating (Anode Heat Sink) Power Switching and Attenuating (Cathode Heat Sink) 1 ; 150 *ti a Part # Pkg. Anodeor Min. Typ. Typ. Test Application 502- # Cathode VBR 7 trr (2) Freq. Heat Sink (VI (ns) (ns) (GHz) High Speed Microwave Switching & Attenuating Universal Switching & Attenuating 3041 Max. Max. Min. Isolation CW Switching VSWR Ins. Loss C3 100mA Capability (db1 (db) (W) 1 Cathode swept 1.5:l 1.o 20(1) Cathode :l Anode :l Anode swept 1.5:l 1.o Part # Pkg. Anodeor Min. Test Max. Max. Ins. Max. Power Max. Application 502- # Cathode VBR Freq. VSWR Loss IN Leakage Heat Sink (V) (GHd(4) (db) (W) Power(W) 2-10 GHz Limiter Cathode :l o Max. Power Dissipation 1.o Application High Speed Switching & Attenuatina Universal Switching & Attenuating Packaged Device Type 502- Chip Ministrip (Pkg. 71) Microstr i p Post (Pkg. 74) Part # ( ) () ( ) () Part # Package Frequency Min. Typical Typical Typical 502- # Range Output Operating Operating Efficiency (GHz) Power (W) Voltage (V) Current (ma) (%I Low Power Devices Medium Power Devices High Power Devices I 043 I I 0.1 I 75 I 35 I Typical Junction Typical Thermal Capacitance Resistance CVBR(PF) (OC/W) (rnax.) (max.) (7) (7) (7) l.0(7) ~~ All devices have Anode heat sink. Other package styles and frequency ranges available on request. 4
5 output Frequency Limit (GHz) 1.5 () Part Pkg. VBR (VI (101 Cjl-10) (PF) (10) Max. T (ns) Max. # # tt e 502- (10) Min. Max. Min. Max. ( ns) Min. Max. (OClW) (9) (9) I (9) (9) Step Recovery Diodes for Hybrid Integrated Circuits Packaged Device Type Chip Part # LID (Pkg. 50) Part # Ministrip (Pkg. 711 Part # Hewlett-Packard maintains an active reliability program to meet customer needs. All of the diodes described in this brochure have the capability to meet MIL-S requirements. In addition, we offer devices which can be purchased to three levels of reliability. These are listed below in their order of ascending reliability level. Other diode types may be available. Consult your local HP Field Office. 1. The following models are guaranteed to pass Group B of MI L-S without additional screening and conditioning Level I screening provides minimum cost while guaranteeing that the production lot will meet Group B of MIL-S requirements. 3. Level II is superior to items 1 and 2 because additional screening is applied, individual stability is monitored by measuring the changes in key parameters, and data on every diode are supplied. I Model to Level I I Tested to Level II Commercial I Models Tested High Reliability Models High Rel. Group B High Reliability to TX-Level 1 N5712 TXI N5712 NOTES: (1) I~=20mA. (2) IF = 20mA. IR = 200mA, 90% recovery. (3) 50 asystem, shunt switch. Multiply by 4 for series switch. (4) 50 a system. External DC return. tp = 1 ps, du =.001. Power In = -10dBm for VSWR & Insertion Loss tests. (5) All devices are also available with 100% testing for VBR, CT, RS and 7. Contact your local HP Sales Office. () Available on special request. Contact your local HP Sales Office. (7) Minimum output power at test frequency. Typical diodes meet the minimum power specification throughout the frequency range listed. Test frequencies are ,. GHz; , 9 GHz; GHz. () Output frequency of glass packaged devices limited to about 1.5 GHz by package parasitics. (9) RF Tested in multiplier circuit. (IO) Special devices in other packages, and virtually any VBR, and Cj are available on request. Capacitance can be selected to 2 3%. Contact your local HP Sales Office. 5
6 -1_- _I HIGH FRE UENCV TRANSISTORS High Gain for Small Signal Amplifiers, Oscillators m U d FREQUENCY, GHz low Noise Figure for Small Signal High Gain Amplifiers m U LL- z FREQUENCY, GHz 20 LL Z f 15 z z 5 a u FREQUENCY, GHz Power for Amplifiers and Oscillators 29 E 2 m 7) n I- 3 2 CT w 5 n FREQUENCY, GHz
7 MODEL* 3520A 3521BlE 3521 E opt BlE 3522E opt BlE 3524A 3525BlE 3525E opt A 3531BlE 3532BlE 3533BlE 3534BlE 351 BIE 351 E opt BlE 352E opt B /E 355E ODt. 100 PACKAGE Chip HPAC-70 HPAC-70 TO-51 TO-72 HPAC-130 HPAC-I 30 Chip H PAC-200s H PAC-200GB GS HPAC-70 HPAC-70 HPAC-130 HPAC-130 Ga(max.1, db TVR f ma x GHz I pout dbm *B/E suffix indicates that either common base (B) or common emitter (E) packages are available. l L.05 MAX.I1,271 f El 11 15,1 HEAT SINK ANODE L%(G)
8 PACKAGE DRAWINGS (cont.) 50 4 i-.a3oi.2oll is R Typ I1741 B IEI * OBlDia q- I553 UdDid Thk c,111, /I I-- P '01 C co l20li L EIBl T,040 *,004 Thh. ;,;ao , E IBI HPac-200 GB (Grounded Bar) HPac-200/HPac-200 S (With Stud) HPac-900 GS (Grounded Stud) HPac-70 For more information, call your local HP Sales Office or East (201) Midwest (312) South (404) West (213) Or, write: Hewlett-Packard, 1501 Page Mill Road, Palo Alto, California In Europe, 1217 Meyrin-Geneva Printed in U.S.A ( 3-72) D - - -
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GHz V Low Current GaAs MMIC LNA Technical Data MGA-876 Features Ultra-Miniature Package.6 db Min. Noise Figure at. GHz. db Gain at. GHz Single + V or V Supply,. ma Current Applications LNA or Gain Stage
Pin Connections and Package Marking. GUx
Surface Mount RF PIN Switch Diodes Technical Data HSMP-389x Series HSMP-89x Series Features Unique Configurations in Surface Mount Packages Add Flexibility Save Board Space Reduce Cost Switching Low Capacitance
SDS4148G SWITCHING DIODE
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Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.
1.5 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-52063 Features Ultra-Miniature Package Single 5 V Supply (30 ma) 22 db Gain 8 dbm P 1dB Unconditionally Stable Applications Amplifier for Cellular,
Surface Mount RF PIN Low Distortion Attenuator Diodes. Technical Data. HSMP-381x Series and HSMP-481x Series. Features
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i 1 i 2 LOmod 3 RF OUT 4 RF OUT 5 IF 6 IF 7 ENABLE 8 YYWW
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Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. HPND- 4005 Beam Lead PIN Diode Data Sheet Description The HPND-4005 planar
Features. = +25 C, 50 Ohm System, Vcc = 5V. Parameter Conditions Min. Typ. Max. Units. Maximum Input Frequency GHz
v2.1 DIVIDE-BY-, DC - 13 GHz Typical Applications Prescaler for DC to Ku Band PLL Applications: Point-to-Point / Multi-Point Radios VSAT Radios Fiber Optic Test Equipment Space & Military Functional Diagram
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VITESSE SEMICONDUCTOR CORPORATION. Bandwidth (MHz) VSC
Features optimized for high speed optical communications applications Integrated AGC Fibre Channel and Gigabit Ethernet Low Input Noise Current Differential Output Single 5V Supply with On-chip biasing
1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
This provides extremely fast tuning speed limited primarily by the internal impedance of the user-supplied voltage driver.
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INTEGRATED CIRCUITS Replaces data of 99 Aug IC7 Data Handbook 997 Nov 7 Philips Semiconductors DESCRIPTION The represents a breakthrough in monolithic amplifier design featuring several innovations. This
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Features. = +25 C, Vcc = +5V
Typical Applications Low noise wideband MMIC VCO for applications such as: Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM Functional Diagram Features Wide Tuning Bandwidth
= 25 C), 50 V. Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units. Small Signal Gain db
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers
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MA4AGSW2. AlGaAs SP2T PIN Diode Switch. MA4AGSW2 Layout. Features. Description. Absolute Maximum Ratings TA = +25 C (Unless otherwise specified)
AlGaAs SP2T PIN Diode Switch Features Ultra Broad Bandwidth: 5 MHz to 5 GHz Functional bandwidth : 5 MHz to 7 GHz.7 db Insertion Loss, 33 db Isolation at 5 GHz Low Current consumption: -1 ma for Low Loss
MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
VI1 VI2 VQ1 VQ2 II1 II2 IQ1 IQ2. Maxim Integrated Products 1
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R Back to Amplifier Systems Ultra Low Noise LNAs C-band LNAs X-band LNAs Ku-band LNAs 100 Davids Drive Hauppauge NY 11788 631-436-7400 Fax: 631-436-7431 www.miteq.com AMFW SATCOM AMPLIFIER SERIES ULTRA
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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