AN102. JFET Biasing Techniques. Introduction. Three Basic Circuits. Constant-Voltage Bias

Size: px
Start display at page:

Download "AN102. JFET Biasing Techniques. Introduction. Three Basic Circuits. Constant-Voltage Bias"

Transcription

1 AN12 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain consistent circuit performance, in spite of device variations, is to use a combination of constant voltage and self biasing. The combined circuit configuration turns out to be the same as that generally used with bipolar transistors, but its operation and design are quite different. Three Basic Circuits Let s examine three basic common-source circuits that can be used to establish a FET s operating point (Q-point) and then see how two of them can be combined to provide greatly improved performance. The three basic biasing schemes are: Constant-voltage bias, which is most useful for RF and video amplifiers employing small dc drain resistors. Constant-current bias, which is best suited to low-drift dc amplifier applications such as source followers and source-coupled differential pairs. Self bias (also called source bias or automatic bias), which is a somewhat universal scheme particularly valuable for ac amplifiers. The Q-point established by the intersection of the load line and the V GS =.4 V output characteristic of Figure 1 provides a convenient starting point for the circuit comparison. The load line shows that a drain supply voltage,, of 3 V and a drain resistance,, of 39 k are being used. The quiescent drain-to-source voltage, V DSQ, is 16 V, allowing large signal excursions at the drain. Maximum input signal variations of.2 V will produce output voltage swings of 7. V, and a voltagain of 35 where: A V g fs 1 g os, g os JFET output conductance In most applications, g os is negligible, therefore: Constant-Voltage Bias (1) (2) The constant-voltage bias circuit (Figure 2) is analyzed by superimposing a line for V GG = constant on the transfer characteristic of the FET (2N4339 typical device). V GS = VDS = 15 V.9.6 = 39 k.2 V.4 V.9.6 Constant V GG Load Line V GG.3.6 V.8 V V DS (V).8 V GS(off) Figure 1. Characteristic Curve A large dynamic range is provided by the operating point at V DSQ = 15 V, Q =.4 ma, and V GSQ =.4 V. Figure 2. Transfer Curve Constant-voltage bias is maintained by the V GG supply as shown on this typical transfer curve. Input signal moves the load line horizontally. 1

2 AN12 The transfer characteristic is a plot of vs. V GS for constant V DS. Since the curve doesn t change much with changes in V DS, it is useful in establishing operating bias points. In fact, it is probably more useful than the output characteristics because its curvature clearly warns of the distortion to be expected with large input signals. Furthermore, when a bias load line is superimposed, allowable signal excursions become evident, and input voltage, gate-source signal voltage, and output signal current calculations may be madraphically. The heavy vertical line at V GS =.4 V establishes the Q-point of Figure 1. No voltage is dropped across resistor because thate current is essentially zero. serves mainly to isolate the input signal from the V GG supply. Excursions of the input signal,, combine in series with V GS so that they add algebraically to the fixed value of.4 V. The effect of signal variation is to instantaneously shift the bias line horizontally without changing its slope. The shifting bias line then develops the output signal current (Figure 2). Constant-Current Bias The constant-current bias approach (Figure 3) for establishing the Q-point of Figure 1 requires a.4-ma current source. For an ideal constant-current generator, input signal excursions merely shift the bias line horizontally and produce no gate-source voltage excursion. This bias technique is therefore limited to source followers, source coupled differential amplifiers, and ac amplifiers where the source terminal is bypassed to ground at the signal frequency. If an ac ground is provided by a bypass capacitor across the current source, a vertical ac bias line will be established. Input signal variations will then translate the ac bias line horizontally, and signal development will proceed as with constant-voltage biasing (Figure 3). Should the bypass capacitor not provide a sufficiently low reactance at the signal frequency, the ac bias line will not be be vertical. It will still intersect the transfer curve at the Q-point but with a slope equal to (1/X C ) = C (Figure 4). This will lower thain of the amplifier because of signal degeneration at the source. The input signal,, is reduced by the drop across the capacitor: V GS = V S = i S X C (3) It is clear from Figure 4 that the input signal shifts the operating point only by an amount equal to V GS, the effective input signal. As the signal frequency is decreased, the slope of the ac bias line decreases, causing the effective input signal to approach zero. Signal development is the same as in the case of the partially bypassed constant-current scheme except that the load line is a dc bias line. Signal degeneration is described by Equation 1 with X C replaced by. The ac gain of the circuit can be increased by shunting with a bypass capacitor, as in the constant-current case. The ac load line then passes through the Q-point with a slope (1/Z S ) = (C + 1/ ). e g.9.6 ac Load Line Signal.9.6 ac Load Line Slope wc.3 dc Load Line.3 dc Load Line =.1 V pk Signal Figure 3. Constant-current bias fixes the output voltage for any. Hence, input signals cannot affect the output unless the current source is bypassed. Figure 4. Partial bypassing of the current source (Figure 3) Lowers the circuit gain by tilting the ac load line from the vertical. The capacitor drop subtracts from. 2

3 AN12 Self-Bias Needs No Extra Supply The self-bias circuit (Figure 5) establishes the Q-point by applying the voltage dropped across the source resistor,, to thate. Since no voltage is dropped across when =, the self-bias load line passes through the origin. Its slope is given by 1/ = Q /V GSQ. The circuit is biased automatically at the desired Q-point, requiring no extra power supply, and providing a degree of current stabilization not possible with constant-voltage biasing. supply is avoided in 6b by deriving V GG from the drain supply. R 1 and R 2 are simply a voltage divider. To maintain the high input impedance of the FET, R 1 and R 2 must both be very large. (a) +V GG.9.6 Self-Bias dc Load Line (b) R 2.3 R (c) R 2 Figure 5. The self-bias load line passes through the origin with a slope 1/. Bypassing will steepen the slope and increase thain of the circuit. R 1 Combo Constant-Current/Self-Biasing A fourth biasing method, combining the advantages of constant-current biasing and self biasing, is obtained by combining the constant-voltage circuit with the self-bias circuit (Figure 6). A principal advantage of this configuration is that an approximation may be made to constant-current bias without any additional power supply. The bias load line may be drawn through the selected Q-point and given any desired slope by properly choosing V GG. (The bias line intercepts the V GS axis at V GG.) The larger V GG is made, the larger will be and the better will be the approximation to constant-current biasing. All three circuits in Figure 6 are equivalent. Circuit 6a requires an extra power supply. The need for an additional 1.6 V GG Figure = 5 k.8 All three combination-bias circuits are equivalent. They add constant-voltage biasing to the self-bias circuit to extablish a reasonably flat load line without sacrificing dynamic range. 3

4 AN12 Very large resistors cannot always be found in the exact ratio needed to derive the desired V GG in every circuit application. Circuit 6c overcomes this problem by placing a large between the center point of the divider and thate. This allows R 1 and R 2 to be small, without lowering the input impedance. One point of caution is that as V GG is increased, V S increases, and V DS decreases. Therefore, with low, there may be a significant decrease in the allowable output voltage swing. Biasing for Device Variations The value of the combination-bias technique becomes apparent when one considers the normal production spread of device characteristics. The problem is illustrated in Figure 7 where the lower and higher ranges of the 2N4339 devices are shown. The two curves illustrate the operating current variations using various types of biasing in a normal production lot. Other devices with even wider min/max SS limits will show wider variations. Attempting to establish suitable constant-voltage bias conditions for a production spread of devices is practical only for circuits with very small values of dc drain resistance for example, circuits with inductive loads. As the constant-voltage bias plot of Figure 7a reveals, constant gate bias causes a significant difference in operating Q for the extreme limit devices. At V GS =.4 V, the range of Q is.13 to.69 ma, and V GSQ for a given will vary greatly for most resistance-loaded circuits. For the example of Figure 1, with = 39 k and = 3 V, V GSO varies from near saturation (5 V) to 25 V. (a) (b) V GG =.4 V.4.8 (c) (d).9 = 1 k = 6 kw Figure 7. Transfer Characterisitc Curves 2N4339: The advantages of combination biasing, when one is working with a spread of device characteristics, are made obvious by plotting the load lines for the various types of biasing on a pair of limiting transfer curves. 4

5 AN12 Minimize The Gain Variations gfs (S) Figure Gain variations are minimized when the load line is designed to intersect the pair of limiting transfer curves (top) at points of equal g fs (bottom). 5

6 AN12 As Figure 8 shows, it is possible to find an and a V GG that will set and to values such that g fsq will be the same for both devices. Th fsq of all intermediate devices will be approximately equal to the limiting values. Thus, a constant, or nearly constant, stagain is obtained even with a bypass capacitor. The design procedure is as follows: Step 1. Step 2. Step 3. Step 4. Step 5. Step 6. Select a desired below SSA. A good value, allowing for temperature variations, is 6% of SSA. This will allow for decreasing SS due to temperature variation and for reasonable signal excursions in load current. Enter the transfer curves at.6 SSA (.3 ma) to find V GS. Thus V GS.2. Drop vertically at V GS to the minimum limit transconductance curve to find g fs. The value as read from the plot is approximately 1 S. Travel across th fs plot to the maximum curve to find V GS at the same value of g fs. This is V GS.7 V. Travel vertically up to the maximum limit transfer curve to find at V GS. This is.36 ma. Construct an bias line through points and on the transfer curves. The slope of the line is 1/, and the intercept with the V GS axis is the required V GG. As Figure 8 demonstrates, it may be somewhat inconvenient to perform Step 6 graphically. An algebraic solution can be employed instead. The source resistance is given by = (V GS V GS ) / ( ) and the bias voltage is V GG = + V GS (4) (5) Just place a straight-edge tangent to the curve at the Q-point and note the points at which it intercepts the and V GS axes. The slope and g fs ariven by: slope = g fs = (intercept) / V GS(intercept) (6) In designing a constant-gain circuit, simply set the straight-edge tangent to the transfer curve of device A at point and slide it, without changing its slope, until it is tangent to the curve of device B. The tangent point is. FET Source-Follower Circuits The common-drain amplifier, or source follower, is a particularly valuable configuration; its high input impedance and low output impedance make it very useful for impedance transformations between FETs and bipolar transistors. By considering eight circuits (Figure 9), which represent virtually every source-follower configuration, the designer can obtain consistent circuit performance despite wide device variations. There are two basic connections for source followers: with and without gate feedback. Each connection comes in several variations. Circuits 9a through 9d have no gate feedback; their input impedances, therefore, are equal to. Circuits 9e through 9h employ feedback to their gates to increase the input impedance above. Beforetting into the details of bias-circuit design, several general observations can be made about the circuits of Figure 9: Circuits a, c, e and g can accept only positive and small negative signals, because these circuits have their source resistors connected to ground. The other circuits can handle large positive and negative signals limited only by the available supply voltages and device breakdown voltage. Circuits c, d, g and h employ current sources to improve drain-current ( ) stability and increasain. Care should be taken to maintain the proper algebraic signs in Equations 4 and 5. For n-channel FETs, V GS is negative and is positive. For p-channel units, the signs are reversed. If the transconductance curves of Figure 8 are not available, g fs can be determined simply by measuring the slope of the transfer curve at the desired operating point. Circuits d and h employ JFETs as current sources. Circuits d, f and h employ a source resistor,, which may be selected to set the quiescent output voltage equal to zero. Circuits d and h use matched FETs. is selected to set. The dc input-output offset voltage is zero. 6

7 AN12 A Q 1 1 B I S C Q 2 2 D V SS (a) (b) (c) (d) V SS Q 1 1 Q 2 R 1 R 1 I S 2 V SS V SS (e) (f) (g) (h) Figure 9. Virtually every practical source-follower configuration is represented in this collection of eight circuits. The configurations in the top row do not employ gate feedback; the corresponding configurations in the bottom row employ gate feedback. 2N C 125C 25C T A = 25C = 1 k = 5 k, V SS = 15 V = 1 k, V SS = V Figure 1. Self-biasing (Figure 9a) uses the voltage dropped across the source resistor, to bias thate. The load line passes through the origin and has a slope of 1/. Figure 11. Adding a V SS Supply to the self-bias circuit (Figure 9b) allows it to handle large negative signals. The load line s intercept with the V GS axis is at V GS = V SS. Bias Lines are shown for V SS = 15 V and V SS = V. 7

8 AN = k.8 + R 1 = 1 k = 1 k R 1 = 1 k Figure 12. This load line is set by 2 and Q 2 which acts as a current source (Figure 9d). This source follower, therefore, exhibits zero or near-zero offset. If the FETs are matched at the operating, the source follower will exhibit zero or near-zero temperature drift. Figure 13. The bias load line is set by but the output load line is determined by + R 1 when gate feedback is employed (Figure 9e). The feedback V FB is determined by the intercept of the + R 1 load line and the V GS axis. Biasing Without Feedback Is Simple Circuit 9b is an example of source-resistor biasing with a V SS supply added. The advantage over circuit 9a is that the signal voltage can swing negative to approximately V SS. Two bias lines are shown in Figure 11, one for V SS = 15 V and the other V SS = V. For the first case, the quiescent output voltage lies between.18 and.74 V. For the second, it lies between.3 and.82 V. A pair of matched FETs is used in the circuit of Figure 9d, one as a source follower and the other as a current source. The operating drain current (Q ) is set by 2, as indicated by the load line of Figure 13. In this illustration the drain current may be anywhere from.2 to.42 ma, as shown by the limiting transfer characteristic intercepts; however, V GS1 = V GS2 because the FETs are matched. Other dual devices, such as 2N5912 and SST441, can operate at 5 ma and frequencies above 4 MHz. Biasing With Feedback Increases Z IN Each of the feedback-type source followers (Figure 9e through 9h) is biased by a method similar to that used with the nonfeedback circuit above it. However, in each case, is returned to a point in the source circuit that provides almost unity feedback to the lower end of. If is chosen so that is returned to zero dc volts (except in circuit 9e), then the input/output offset is zero. R 1 is usually much larger than. Circuit 9e is useful principally for ac-coupled circuits. is usually much less than R 1 to provide near-unity feedback. The bias load line is set by (Figure 13). The output load line, however is determined by the sum of + R 1. The feedback voltage V FB, measured at the junction of and R 1, is determined by the intercept of the + R 1 load line with the V GS axis. The quiescent output voltage is V FB V GS..8 + R 1 = 5 k V SS = 15 V.4 = 67 = 2.5 k Figure 14. can be trimmed to provide zero offset at some point between 67 w and 2.5 k (Figure 9f). The source load line intercepts the V GS axis at V SS = V GG = 15 V. Note that this load line is not perfectly flat. it has a slope of 1/5 k, because the current source is not perfect; it has a finite impedance. In the circuit of Figure 9f, can be trimmed to provide zero offset. As the curves show (Figure 14), will be between 67 and 2.5 k. is much less than R 1. The source load line intercepts the V GS axis at V SS = V GG = 15 V. 8

9 AN12 Practical Amplifier Biasing Examples All commercially available JFET part numbers exhibit a significant variation in the SS and V GS(off) parameters. Applying the Figure 9a and 9d biasing configurations, Figures 15 and 16 provide typical worst case drain-current extremes as a function of source resistance. Plotted are the popular low-current amplifiers. Applying the Figure 9a biasing technique to a small-signal amplifier circuit as illustrated in Figure 17, results in typical voltagain as plotted in Figure 18. Note that as the drain current decreases the overall gain increases since can breater, despite transconductanc fs decreasing. Part Number 2N4338, 2N4339 J21, J22, 2N5484 SST21, SST22, SST5484 Package TO-26AA (TO-18) Metal Can TO-226AA (TO-92) Through-Hole Plastic TO-236 (SOT-23) Surface Mount 2 1 SST/J21 Max. SST5484 2N5484 Max N4339 Max. SST/J22 Max. Drain Current.5.5 SST/J21 Min..1 = 4 to 2 V.1.5 SST N5484 Min. Drain Current 2N4338 Min. = 4 to 2 V 2N4338 Max SST/J22 Min. 2N4339 Min Source Resistance (k) Source Resistance (k) Figure 15. JFET Source Biased Drain-Current vs. Source Resistance Figure 16. JFET Source Biased Drain-Current vs. Source Resistance 2 V IN V O C S A V Voltage Gain N4338/9 SST/J21 g fs A V 1 g os Assume = 15 V, V DS = 5 V 1 V SST/2N SST/J22 Figure 17. JFET Source Biased Amplifier Drain Current Figure 18. Circuit Voltage Gain vs. Drain-Current 9

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field

More information

The Common Source JFET Amplifier

The Common Source JFET Amplifier The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely

More information

ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections

ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections ITT Technical Institute ET215 Devices 1 Unit 7 Chapter 4, Sections 4.1 4.3 Chapter 4 Section 4.1 Structure of Field-Effect Transistors Recall that the BJT is a current-controlling device; the field-effect

More information

Gechstudentszone.wordpress.com

Gechstudentszone.wordpress.com UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits

More information

UNIT I - TRANSISTOR BIAS STABILITY

UNIT I - TRANSISTOR BIAS STABILITY UNIT I - TRANSISTOR BIAS STABILITY OBJECTIVE On the completion of this unit the student will understand NEED OF BIASING CONCEPTS OF LOAD LINE Q-POINT AND ITS STABILIZATION AND COMPENSATION DIFFERENT TYPES

More information

Name: Date: Score: / (75)

Name: Date: Score: / (75) Name: Date: Score: / (75) This lab MUST be done in your normal lab time NO LATE LABS Bring Textbook to Lab. You don t need to use your lab notebook, just fill in the blanks, you ll be graded when you re

More information

UNIT 4 BIASING AND STABILIZATION

UNIT 4 BIASING AND STABILIZATION UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the

More information

MODULE-2: Field Effect Transistors (FET)

MODULE-2: Field Effect Transistors (FET) FORMAT-1B Definition: MODULE-2: Field Effect Transistors (FET) FET is a three terminal electronic device used for variety of applications that match with BJT. In FET, an electric field is established by

More information

FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)

FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET) FIELD EFFECT TRANSISTOR (FET) The field-effect transistor (FET) is a three-terminal device used for a variety of applications that match, to a large extent, those of the BJT transistor. Although there

More information

Field - Effect Transistor

Field - Effect Transistor Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,

More information

BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier. Superposition principle (linear amplifier) BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

More information

Frequently Asked Questions

Frequently Asked Questions Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 13 Lecture Title: Analog Circuits

More information

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal

More information

JFET 101, a Tutorial Look at the Junction Field Effect Transistor 8May 2007, edit 2April2016, Wes Hayward, w7zoi

JFET 101, a Tutorial Look at the Junction Field Effect Transistor 8May 2007, edit 2April2016, Wes Hayward, w7zoi JFET 101, a Tutorial Look at the Junction Field Effect Transistor 8May 2007, edit 2April2016, Wes Hayward, w7zoi FETs are popular among experimenters, but they are not as universally understood as the

More information

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of

More information

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018 Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal

More information

Figure 1: JFET common-source amplifier. A v = V ds V gs

Figure 1: JFET common-source amplifier. A v = V ds V gs Chapter 7: FET Amplifiers Switching and Circuits The Common-Source Amplifier In a common-source (CS) amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,

More information

Application Note 5379

Application Note 5379 VMMK-1225 Applications Information Application Note 5379 Introduction The Avago Technologies VMMK-1225 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the

More information

Electronic PRINCIPLES

Electronic PRINCIPLES MALVINO & BATES Electronic PRINCIPLES SEVENTH EDITION Chapter 13 JFETs Topics Covered in Chapter 13 Basic ideas Drain curves Transconductance curve Biasing in the ohmic region Biasing in the active region

More information

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer

More information

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Neamen Microelectronics Chapter 4-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 4 Basic FET Amplifiers Neamen Microelectronics Chapter 4-2 In this chapter, we will: Investigate

More information

ITT Technical Institute. ET215 Devices 1. Chapter

ITT Technical Institute. ET215 Devices 1. Chapter ITT Technical Institute ET215 Devices 1 Chapter 4.6 4.7 Chapter 4 Section 4.6 FET Linear Amplifiers Transconductance of FETs The output drain current is controlled by the input signal voltage. As we earlier

More information

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

More information

6. Field-Effect Transistor

6. Field-Effect Transistor 6. Outline: Introduction to three types of FET: JFET MOSFET & CMOS MESFET Constructions, Characteristics & Transfer curves of: JFET & MOSFET Introduction The field-effect transistor (FET) is a threeterminal

More information

The Common Emitter Amplifier Circuit

The Common Emitter Amplifier Circuit The Common Emitter Amplifier Circuit In the Bipolar Transistor tutorial, we saw that the most common circuit configuration for an NPN transistor is that of the Common Emitter Amplifier circuit and that

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information

Field Effect Transistors (npn)

Field Effect Transistors (npn) Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal

More information

INTRODUCTION TO ELECTRONICS EHB 222E

INTRODUCTION TO ELECTRONICS EHB 222E INTRODUCTION TO ELECTRONICS EHB 222E MOS Field Effect Transistors (MOSFETS II) MOSFETS 1/ INTRODUCTION TO ELECTRONICS 1 MOSFETS Amplifiers Cut off when v GS < V t v DS decreases starting point A, once

More information

LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN

LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN OBJECTIVES 1. To design and DC bias the JFET transistor oscillator for a 9.545 MHz sinusoidal signal. 2. To simulate JFET transistor oscillator using MicroCap

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS Most of the content is from the textbook: Electronic devices and circuit theory, Robert

More information

An introduction to Depletion-mode MOSFETs By Linden Harrison

An introduction to Depletion-mode MOSFETs By Linden Harrison An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the enhancement-mode MOSFET has been the subject of almost continuous global research, development, and refinement

More information

Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1

Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1 Lecture 14 Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1 Outline Introduction to FET transistors Types of FET Transistors Junction Field Effect Transistor (JFET) Characteristics Construction

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain

A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain Paper ID #11289 A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain Prof. James E. Globig, University of Dayton Prof. Globig joined the University of Dayton in August 1998. Before becoming

More information

APPLICATION NOTE AN-009. GaN Essentials. AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs

APPLICATION NOTE AN-009. GaN Essentials. AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table

More information

Chapter Two "Bipolar Transistor Circuits"

Chapter Two Bipolar Transistor Circuits Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point. Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring

More information

Field-Effect Transistor

Field-Effect Transistor Philadelphia University Faculty of Engineering Communication and Electronics Engineering Field-Effect Transistor Introduction FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction Transistors).

More information

EE105 Fall 2015 Microelectronic Devices and Circuits

EE105 Fall 2015 Microelectronic Devices and Circuits EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of

More information

2N3819. N-Channel JFET. Vishay Siliconix. V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma)

2N3819. N-Channel JFET. Vishay Siliconix. V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma) N9 N-Channel JFET V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) 5 Excellent High-Frequency Gain: Gps db @ MHz Very Low Noise: db @ MHz Very Low Distortion High ac/dc Switch Off-Isolation High

More information

Prof. Paolo Colantonio a.a

Prof. Paolo Colantonio a.a Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high

More information

Electronic Circuits II - Revision

Electronic Circuits II - Revision Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load

More information

4.5 Biasing in MOS Amplifier Circuits

4.5 Biasing in MOS Amplifier Circuits 4.5 Biasing in MOS Amplifier Circuits Biasing: establishing an appropriate DC operating point for the MOSFET - A fundamental step in the design of a MOSFET amplifier circuit An appropriate DC operating

More information

LM340 Series Three Terminal Positive Regulators

LM340 Series Three Terminal Positive Regulators LM340 Series Three Terminal Positive Regulators Introduction The LM340-XX are three terminal 1.0A positive voltage regulators, with preset output voltages of 5.0V or 15V. The LM340 regulators are complete

More information

Field Effect Transistor (FET) FET 1-1

Field Effect Transistor (FET) FET 1-1 Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type

More information

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Operation Class A Power

More information

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT) Course Outline 1. Chapter 1: Signals and Amplifiers 1 2. Chapter 3: Semiconductors 3. Chapter 4: Diodes 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

More information

Chapter 7: FET Biasing

Chapter 7: FET Biasing Chapter 7: FET Biasing Common FET Biasing Circuits JFET Biasing Circuits Fixed Bias Self-Bias oltage-ivider Bias -Type MOSFET Biasing Circuits Self-Bias oltage-ivider Bias E-Type MOSFET Biasing Circuits

More information

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

Chapter 8: Field Effect Transistors

Chapter 8: Field Effect Transistors Chapter 8: Field Effect Transistors Transistors are different from the basic electronic elements in that they have three terminals. Consequently, we need more parameters to describe their behavior than

More information

Homework Assignment 06

Homework Assignment 06 Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,

More information

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section

More information

2N/PN/SST4391 Series. N-Channel JFETs. Vishay Siliconix 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393

2N/PN/SST4391 Series. N-Channel JFETs. Vishay Siliconix 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 2N/PN/SST49 Series N-Channel JFETs 2N49 PN49 SST49 2N492 PN492 SST492 2N49 PN49 SST49 Part Number GS(off) () r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) 2N/PN/SST49 4 to 5 4 2N/PN/SST492 2 to 5 6

More information

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013) DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent

More information

Chapter 5: Field Effect Transistors

Chapter 5: Field Effect Transistors Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

More information

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide

More information

PREVIEW COPY. Amplifiers. Table of Contents. Introduction to Amplifiers...3. Single-Stage Amplifiers...19

PREVIEW COPY. Amplifiers. Table of Contents. Introduction to Amplifiers...3. Single-Stage Amplifiers...19 Amplifiers Table of Contents Lesson One Lesson Two Lesson Three Introduction to Amplifiers...3 Single-Stage Amplifiers...19 Amplifier Performance and Multistage Amplifiers...35 Lesson Four Op Amps...51

More information

Lecture 17. Field Effect Transistor (FET) FET 1-1

Lecture 17. Field Effect Transistor (FET) FET 1-1 Lecture 17 Field Effect Transistor (FET) FET 1-1 Outline ntroduction to FET transistors Comparison with BJT transistors FET Types Construction and Operation of FET Characteristics Of FET Examples FET 1-2

More information

After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular

After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular BJT Biasing A bipolar junction transistor, (BJT) is very versatile. It can be used in many ways, as an amplifier, a switch or an oscillator and many other uses too. Before an input signal is applied its

More information

EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS

EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS UNITII CHARACTERISTICS OF OPAMP 1. What is an opamp? List its functions. The opamp is a multi terminal device, which internally is quite complex. It is a direct coupled high gain amplifier consisting of

More information

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 12 Lecture Title: Analog Circuits

More information

ECE 145A/218A, Lab Project #1b: Transistor Measurement.

ECE 145A/218A, Lab Project #1b: Transistor Measurement. ECE 145A/218A, Lab Project #1b: Transistor Measurement. September 28, 2017 OVERVIEW... 2 GOALS:... 2 SAFETY PRECAUTIONS:... 2 READING:... 2 TRANSISTOR RF CHARACTERIZATION.... 3 DC BIAS CIRCUITS... 3 TEST

More information

Low Cost, General Purpose High Speed JFET Amplifier AD825

Low Cost, General Purpose High Speed JFET Amplifier AD825 a FEATURES High Speed 41 MHz, 3 db Bandwidth 125 V/ s Slew Rate 8 ns Settling Time Input Bias Current of 2 pa and Noise Current of 1 fa/ Hz Input Voltage Noise of 12 nv/ Hz Fully Specified Power Supplies:

More information

ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers

ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers Objective Design, simulate and layout various inverting amplifiers. Introduction Inverting amplifiers are fundamental building blocks of electronic

More information

Designing Your Own Amplifier, Part 1: Voltage Amplifier Stages

Designing Your Own Amplifier, Part 1: Voltage Amplifier Stages Audio Classroom Designing Your Own Amplifier, Part 1: Voltage Amplifier Stages This article appeared originally in Audiocraft, March 1956. 1956 by Audiocom, Inc. BY NORMAN H. CROWHURST How, do you go about

More information

Video Course on Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Video Course on Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Video Course on Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No. # 02 Transistors Lecture No. # 09 Biasing a Transistor (Contd) We continue our discussion

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-3 MOSFET UNDER

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

Field Effect Transistors

Field Effect Transistors Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

More information

Chapter 8: Field Effect Transistors

Chapter 8: Field Effect Transistors Chapter 8: Field Effect Transistors Transistors are different from the basic electronic elements in that they have three terminals. Consequently, we need more parameters to describe their behavior than

More information

Silicon Junction Field-Effect Transistors

Silicon Junction Field-Effect Transistors D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Unit N N N N Parameters

More information

IFB270 Advanced Electronic Circuits

IFB270 Advanced Electronic Circuits IFB270 Advanced Electronic Circuits Chapter 9: FET amplifiers and switching circuits Prof. Manar Mohaisen Department of EEC Engineering Review of the Precedent Lecture Review of basic electronic devices

More information

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved. Pearson BTEC Levels 4 Higher Nationals in Engineering (RQF) Unit 19: Electrical and Electronic Principles Unit Workbook 4 in a series of 4 for this unit Learning Outcome 4 Digital & Analogue Electronics

More information

DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE MASSACHUSETTS INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS 02139

DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE MASSACHUSETTS INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS 02139 DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE MASSACHUSETTS INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS 02139 Spring Term 2007 6.101 Introductory Analog Electronics Laboratory Laboratory

More information

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions

More information

Electronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd

Electronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd Electronic Devices Ninth Edition Floyd Chapter 9 The Common-Source Amplifier In a CS amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The amplifier has

More information

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Microelectronic Circuits Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 1 MOSFET Construction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 2

More information

U to SST/U to SST/U to Features Benefits Applications

U to SST/U to SST/U to Features Benefits Applications SST/U Series Monolithic N-Channel JFET Duals Product Summary SST SST U U U Part Number GS(off) () (BR)GSS Min () Min (ms) I G Typ (pa) GS GS Max (m) U. to. SST/U. to. SST/U. to. Features Benefits Applications

More information

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type

More information

PHYS 3050 Electronics I

PHYS 3050 Electronics I PHYS 3050 Electronics I Chapter 4. Semiconductor Diodes and Transistors Earth, Moon, Mars, and Beyond Dr. Jinjun Shan, Associate Professor of Space Engineering Department of Earth and Space Science and

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting

More information

Three Terminal Devices

Three Terminal Devices Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

More information

4 Transistors. 4.1 IV Relations

4 Transistors. 4.1 IV Relations 4 Transistors Due date: Sunday, September 19 (midnight) Reading (Bipolar transistors): HH sections 2.01-2.07, (pgs. 62 77) Reading (Field effect transistors) : HH sections 3.01-3.03, 3.11-3.12 (pgs. 113

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-7 High Frequency

More information

GATE SOLVED PAPER - IN

GATE SOLVED PAPER - IN YEAR 202 ONE MARK Q. The i-v characteristics of the diode in the circuit given below are : v -. A v 0.7 V i 500 07 $ = * 0 A, v < 0.7 V The current in the circuit is (A) 0 ma (C) 6.67 ma (B) 9.3 ma (D)

More information

ATF High Intercept Low Noise Amplifier for the MHz PCS Band using the Enhancement Mode PHEMT

ATF High Intercept Low Noise Amplifier for the MHz PCS Band using the Enhancement Mode PHEMT ATF-54143 High Intercept Low Noise Amplifier for the 185 191 MHz PCS Band using the Enhancement Mode PHEMT Application Note 1222 Introduction Avago Technologies ATF-54143 is a low noise enhancement mode

More information

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET (field-effect transistor) unipolar devices - unlike BJTs that use both electron and hole current, they operate only with one type

More information

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Saqib Riaz Engr. M.Nasim Khan Dr.Noman Jafri Lecturer

More information

Oscillators. An oscillator may be described as a source of alternating voltage. It is different than amplifier.

Oscillators. An oscillator may be described as a source of alternating voltage. It is different than amplifier. Oscillators An oscillator may be described as a source of alternating voltage. It is different than amplifier. An amplifier delivers an output signal whose waveform corresponds to the input signal but

More information

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data

More information

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each) Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer

More information

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and

More information