Low power, Programmable SMD MEMS Oscillator

Size: px

Start display at page:

Download "Low power, Programmable SMD MEMS Oscillator"

Everett Hawkins
6 years ago
Views:

1 Moisture Sensitivity Level (MSL) 1 SD Sensitive AS: APPLICAIONS: GPON, PON Portable devices Consumer electronics Network switches, router, servers thernet, S, SAA, SAS, irewire Harsh environment (vibration, shock-prone and humid) Industry Standard package sizes: 2.0 x 1.6 x 0.75mm, 2.5 x 2.0 x 0.75mm, 3.2 x 2.5 x 0.75mm, 5 x 3.2 x 0.75mm, Any frequency between 1MHz and 137MHz Supply oltage options: 3.3, 3.0, 2.8, 2.5, 1.8, 2.25 ~ 3.63 Low Current Consumption: 3.5mA typ. (@20MHz, 1.8, no load); 4.9mA typ. (@125MHz, 1.8, no load) requency Stability options: ±20ppm, ±25ppm, ±50ppm over -20 to +70 C and -40 to +85 C actory programmable drive strength for improved jitter, reduced MI or higher capacitive output load High Performance MMS echnology by Siime SANDAD SPCIICAIONS: All Min and Max limits are specified over temperature and rated operating voltage with 15p output load unless otherwise stated. ypical values are at 25 C and nominal supply voltage. Parameters Min yp Max nit Notes Output requency ange () MHz See Section 1.1 for Standard requencies MHz Standard requencies Inclusive of initial tolerance at 25 C, 1st year aging at 25 C, and variations over requency Stability (stab) ppm operating temperature, rated power supply voltage and load (15p±10%) Option C Operating emperature ange (use) Option L Option Option Option Supply oltage (dd) Option Option Option lank Current Consumption ( Idd ) O Disable Current (IOD) Standby Current (Istd) Startup ime (start) nable/disable ime (oe) esume ime ( resume) No load, =20MHz, dd=2.8,3.0,3.3 or No load, =20MHz, dd=2.5 ma No load, =125MHz, dd=1.8 ma µa ms ns ms No load, =20MHz, dd=1.8 No load, =125MHz, dd=2.8,3.0,3.3 or No load, =125MHz, dd=2.5 dd= , O=GND, output is in High-Z state dd=1.8, O=GND, output is in High-Z state S=GND, dd= , output is weakly pulled down S=GND, dd=2.5, output is weakly pulled down S=GND, dd=1.8, output is weakly pulled down Measured from the time dd reaches its rated minimum value =110MHz. or other frequencies, oe=100ns+3*cycles =137MHz. or other frequencies, oe=100ns+3*cycles Measured from the time S pin crosses 50% threshold

2 (Continued) Parameters Min Output ype Duty Cycle yp Max nit % Notes LCMOS ise/all ime ( r /f) All dd options dd=2.5, 2.8, 3.0 or 3.3, 20%-80% ns dd=1.8, 20%-80% dd= , 20%-80% IOH=-4mA (dd=3.0 or 3.3) Output High oltage (OH) 90%*dd IOH=-3mA (dd=2.8 or 2.5) IOH=-2mA (dd=1.8) IOL=4mA (dd=3.0 or 3.3) Output Low oltage (OL) 10%*dd IOL=3mA (dd=2.8 or 2.5) IOL=2mA (dd=1.8) Input High oltage(ih) Input Low oltage(il) 70%*dd 50 Input Pull-up Impedance ( Zin) Peak-to-peak Period Jitter (pk) MS Phase Jitter (random) ( phj) Standard requency (MHz) kω 2 MS Period Jitter ( jitt) %*dd MΩ Standard requency (MHz) Pin 1 Pin 1 Pin 1, O logic high or logic low, S logic high Pin 1, S logic low =75MHz, dd=2.5, 2.8, 3.0 or 3.3 ps =75MHz, dd=1.8 =125MHz, dd=2.5, 2.8, 3.0 or 3.3 =125MHz, dd=1.8 ps ps =75MHz, 125MHz, dd=2.5, 2.8, 3.0 or 3.3 =75MHz, 125MHz, dd=1.8 =75MHz, integration bandwidth=900khz to 7.5MHz =75MHz, integration bandwidth=12khz to 20MHz

3 Absolute Maximum atings Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameters Storage e mperature DD lectrostatic Discharge (HM) Soldering emperature (follow standard free soldering guidelines) Junction emperature (1) Min Max nit C 260 C 150 C Note: 1. xceeding this temperature for extended period of time may damage the device hermal Consideration θja, 4 Layer oard ( C/W) Package 7.0 x 5.0mm 5.0 x 3.2mm 3.2 x 2.5mm 2.5 x 2.0mm 2.0 x 1.6mm θja, 2 Layer oard ( C/W) θjc, ottom ( C/W) Maximum Operating Junction emperature (2) Max. Operating emperature (ambient) 70 C 85 C Max. Operating Junction emperature 80 C 95 C Note: 2. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature PA IDNIICAION: - Package Size A: 2.0x1.6mm D: 2.5x2.0mm : 3.2x2.5mm L: 5.0x3.2mm : 7.0x5.0mm - Output requency in MHz e.g , MHz- req. Stability J: ±20ppm : ±25 ppm C: ±50 ppm - Pin 1 unction : Output nable S: Standby N: No Connect Operating emp. : -20 C ~ +70 C L: -40 C ~ +85 C Supply oltage lank: 2.25~ : 1.8±10% 25: 2.5±10% 28: 2.8±10% 30: 3.0±10% 33: 3.3±10% - Packaging lank: ulk : ape & eel (1kpcs / reel) 3: ape & eel (3kpcs / reel) Output * lank: Default L** A** * See able 1 to 5 for the ise/all times at different drive strength and available options ** Only available for =1MHz~110MHz

4 able 1: dd=1.8 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) Drive Strength 5p 15p 30p 45p L A or lank p (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p or lank able 2: dd=2.5 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p L A or lank p (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p or lank able 3: dd=2.8 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p L A or lank p (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 30p or lank

5 able 4: dd=3.0 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p L A or lank p (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 30p or lank able 5: dd=3.3 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p L A or lank p (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 30p or lank CALCLAING MAXIMM QNCY ased on the rise and fall time data given in able 1 through 5, the maximum frequency the oscillator can operate with a guaranteed full swing of the output voltage over temperature is calculated as follows: 1 xample: Calculate max of a 1MHz ~ 110MHz device with the following condition: º dd = 1.8 (able 1) º Capacitive Load = 30p º Desired r/f ime: = 3ns (rise/fall time option code ) he max is MHz.

6 YPICAL POMANC DAA All plots are measured with 15p load at room temperature, unless otherwise stated. IDD vs. requency requency vs. emperature

7 YPICAL POMANC DAA MS Period Jitter vs. requency Duty Cycle vs. requency

8 YPICAL POMANC DAA 20% - 80% ise ime vs. emperature 20% - 80% all ime vs. emperature

9 YPICAL POMANC DAA MS Integrated Phase Jitter andom (12kHz to 20MHz) vs requency (3) MS Integrated Phase Jitter andom (900kHz to 20MHz) vs requency (3) Notes: 3. Phase noise plots are measured with Agilent 5052 signal source analyzer. Integration range is up to 5MHz for carrier frequencies below 40MHz.

10 OLIN DIMNSION: 2.0 x 1.6mm Package (Option A ) ecommended Land Pattern 2.5 x 2.0mm Package (Option D ) ecommended Land Pattern 3.2 x 2.5mm Package (Option ) ecommended Land Pattern

11 OLIN DIMNSION: 5.0 x 3.2mm Package (Option L ) ecommended Land Pattern 7.0 x 5.0mm Package (Option ) ecommended Land Pattern Pin Name Output nable 1 O/S Standby No Connect GND Out dd Power Output Power unctionality H or Open (4): specified frequency output L: output is high impedance. Only output driver is disabled H or Open (4): specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to Istd. Any voltage between 0 and dd or Open (4): specified frequency output. Pin 1 has no function. lectrical ground (5) Oscillator clock output Power supply voltage (5) Notes: 4. In O or S mode, a pull-up resistor of <10kΩ between O/S pin and dd is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 5. A capacitor value of 0.1µ between dd and GND is required. Dimensions: mm

LOW POIL: Item Conditions S MAX to L (amp-up ate) 3 C/second max Preheat emperature Minimum (S MIN) 150 C emperature ypical (S YP) 175 C emperature Maximum (S MAX) 200 C ime (ts) 60 180 seconds

12 LOW POIL: Item Conditions S MAX to L (amp-up ate) 3 C/second max Preheat emperature Minimum (S MIN) 150 C emperature ypical (S YP) 175 C emperature Maximum (S MAX) 200 C ime (ts) seconds amp-up ate (L to P) 3 C/second max ime Maintained Above emperature (L) 217 C ime (tl) seconds Peak emperature (P) 260 C max arget Peak emperature (P arget) 255 C ime within 5 C of actual peak (tp) seconds Max. Number of eflow Cycles 3 amp-down ate 6 C/second max ime 25 C to Peak emperature (t) 8 minutes max AP & L: Device Size D0 5±0.05 5± / / /0.0 Device Size D1 min ± ±0.1 2 min ± ±0.05 P0 P1 P2 2.0± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± max max W max A0 1.9± ± ± ± ± ± ± ± ± ±0.10 K0 ± ± ± ± ±0.10 nit: mm

13 AP & L: ape Size 8mm 12mm 16mm A max Device Size min. C / ± ± ± ±0.2 D min (1k/reel) 8mm ape 7 eel 8mm ape 7 eel 8mm ape 7 eel 12mm ape 7 eel 16mm ape 7 eel N 60±0.5 60± ±0.5 60± ±0.5 nit: mm W1 W2 max. 8.4+/ / / / / (3k/reel) 8mm ape 7 eel 8mm ape 7 eel 8mm ape 7 eel 12mm ape 13 eel 16mm ape 13 eel ANION: Abracon Corporation s products are COS Commercial-Off-he-Shelf products; suitable for Commercial, Industrial and, where designated, Automotive Applications. Abracon s products are not specifically designed for Military, Aviation, Aerospace, Life-dependant Medical applications or any application requiring high reliability where component failure could result in loss of life and/or property. or applications requiring high reliability and/or presenting an extreme operating environment, written consent and authorization from Abracon Corporation is required. Please contact Abracon Corporation for more information.

Ultra-miniature, Low Power, kHz SMD MEMS Oscillator

Ultra-miniature, Low Power, kHz SMD MEMS Oscillator ESD Sensitive Moisture Sensitivity Level (MSL) 1 FEAURES: Ultra-miniature size: Supply Voltage: 1.5V to 3.63V Ultra-Low Current Consumption: 1.0µA typ.(no load) Frequency Stabilities include: ±75ppm over